JP2519273B2 - Ultra high vacuum bonding equipment - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultra-high vacuum bonding apparatus, and more particularly, to performing discharge cleaning for cleaning a flat surface of a member to be diffusion bonded. The present invention relates to a suitable ultra-high vacuum bonding apparatus.

[Conventional technology]

As a production technology for machines and electronic parts, there is a growing need for solid-state bonding technology with high reliability, which allows bonding with excellent dimensional accuracy without losing the characteristics of materials.

In a conventional ultra-high vacuum bonding apparatus, a chamber for introducing a member to be processed, a cleaning chamber for cleaning a bonding surface, a bonding processing chamber and the like are integrated. Therefore, after cleaning the bonding surface by ion irradiation or the like, it took a long time to bring the bonding processing chamber to a predetermined vacuum degree.

Further, in the case of cleaning the bonding surface by ion irradiation or the like, if the surface area of the members to be bonded is large, the ion irradiation means is scanned to perform cleaning, so that it takes a long time.

For this reason, it has been difficult to improve the throughput of the joining process by the conventional technique.

Regarding such a conventional technique, for example, an outline of the general meeting of the Autumn Meeting of the Japan Institute of Metals (1986-10), P.417,
It is disclosed in "Study on Ceramic-Metal Room Temperature Bonding in Ultra High Vacuum".

[Problems to be Solved by the Invention]

As described above, in the conventional technology, the introduction chamber for the member to be processed, the cleaning chamber, the bonding processing chamber, etc. are integrated into a single structure,
Since cleaning and bonding are performed in the same chamber, cleaning is performed while scanning the surface of the member by, for example, Ar (argon) ion inspection, and then, for example, ultra-high vacuum environment (10 ^-9 to 10 for diffusion bonding). ^It takes a long time to reach ^-10 Torr). Further, it takes a long time to clean a large joint surface by Ar ion inspection or the like. Under such circumstances, it has been difficult to increase the production efficiency and improve the throughput so as to mass-bond the workpieces.

Further, as a device in which a cleaning chamber, a bonding processing chamber and the like are partitioned by a gate valve, there is, for example, Japanese Patent Laid-Open No. 60-82.
A clean surface joining device described in Japanese Patent No. 280 is known. This device can continuously perform cleaning, coating, and bonding of the bonding surface of the members to be processed, but does not sufficiently consider the insulating environment of the cleaning chamber and the thermal environment of the cleaning chamber, the bonding processing chamber, etc. It was

The present invention has been made in order to solve the above-mentioned problems of the prior art, and after carrying in a workpiece to be processed, solid phase bonding can be performed in a shorter time than in the past, and mass production of bonding processing becomes possible. At the same time, it is an object of the present invention to provide an ultra-high vacuum bonding apparatus capable of cleaning the bonding surface uniformly and with moderate moderateness.

Another object of the present invention is to improve the efficiency and stabilization of the cleaning by using only the cleaning chamber as an insulating environment, and the cleaning chamber and the bonding processing chamber do not affect each other's work. It is to provide a vacuum bonding apparatus.

[Means for solving the problem]

In order to achieve the above object, the structure of the ultra-high vacuum bonding apparatus according to the present invention is a glow discharge for cleaning the introduction chamber of the member to be processed, the transfer chamber of the member to be processed, the bonding surface of the member to be processed In the ultra-high vacuum bonding apparatus having a cleaning chamber equipped with a cleaning device and a bonding chamber for heating and heating members under pressure to perform solid-phase bonding, the above-mentioned introduction chamber and transfer A chamber, a cleaning chamber, and a bonding chamber are connected in series and arranged, between the introduction chamber and the transfer chamber, between the transfer chamber and the cleaning chamber, and between the cleaning chamber and the bonding chamber, Each of them is partitioned by a gate valve, and the transfer chamber and the cleaning chamber and the cleaning chamber and the bonding chamber are electrically insulated from each other.

[Action]

 The functions of the above technical means are as follows.

In order to make each chamber an independent chamber, a gate valve is provided between the introduction chamber of the processing target member and the transfer chamber, between the transfer chamber and the cleaning chamber, and between the cleaning chamber and the bonding chamber. Moreover, the cleaning chamber is electrically insulated from the transfer chamber and the bonding chamber.

Further, the member to be treated is set in the cleaning chamber to bring the entire indoor space region into a glow discharge state. The glow discharge is generated between the cleaning chamber wall and the glow mold plasma source, or between the member to be treated and the glow mold plasma source, so that the joint surface of the member to be treated is uniformly and moderately washed. So, so to speak, it can be done mildly.

In particular, since only the cleaning chamber in which the glow discharge is executed has an insulating environment, the discharge can be efficiently and stably performed.

Further, even if the cleaning chamber and the bonding processing chamber are simultaneously operated, the mutual operations do not affect the operations in other rooms.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

FIG. 1 is a schematic configuration diagram of an ultra-high vacuum bonding apparatus according to an embodiment of the present invention, and FIG. 2 is a configuration diagram of the cleaning chamber of FIG.

In FIG. 1, 1 is a member to be treated for solid phase bonding (hereinafter referred to as a sample in this embodiment), 2 is the sample 1
A sample mounting cassette for introducing a sample, 3 is a sample introducing chamber related to an introducing chamber of a member to be processed, and 4 is a sample introducing chamber 3
A flange portion 5 serving as an inlet of the sample 1 is a gate valve provided between the sample introducing chamber 3 and a transfer chamber 10 described later,
6 is the sample mounting cassette 2 which moves up and down as shown by the arrow (transport chamber).
Rods 7 for introducing and withdrawing into and from 10) are bellows for sealing the inside of the sample introducing chamber 3 while enabling the rod 6 to move up and down, and these constitute the introducing chamber for the member to be treated.

Further, 8 is a transfer manipulator, 9 is a magnet for operating this transfer manipulator 8 in the direction of the arrow, 10 is the sample 1 introduced from the sample introducing chamber 3 to the transfer manipulator. A transport chamber for transporting to the cleaning chamber and the bonding processing chamber via 8;
Is the port for transporting the sample out of the container, and 12 is the port
A flange for opening and closing 11 is shown, and these constitute a transfer chamber for the member to be processed.

Next, 13 is a cleaning chamber for cleaning the bonding surface of the sample 1, 14 is a sample stand on which the sample 1 is placed, 15 is the cleaning chamber 13, the transfer chamber 10, and a bonding processing chamber 19 described later. The gate valve 16 provided between the cleaning chamber 13 and the transfer chamber 10 is an electrical insulating plate for electrically insulating the cleaning chamber 13 and the bonding processing chamber 19 from each other.

FIG. 2 shows an electric discharge cleaning device for the cleaning chamber 13. Reference numeral 17 is a cathode, and 18 is an anode arranged so as to cover the cathode 17 and having a large number of through holes (not shown) on the entire surface,
A glow mode in which an electric circuit for heating the cathode 17 and a power source for applying a voltage V to the anode 18 are provided as shown in the drawing, and an argon gas introducing means (not shown) is provided to maintain the inside of the cleaning chamber 13 in a uniform glow discharge state. It constitutes the plasma source.

Next, 19 is a bonding chamber for performing diffusion bonding related to solid phase bonding (hereinafter referred to as a bonding processing chamber), 20 is a shell for injecting liquid nitrogen, 21 is a liquid nitrogen injection port, and 22 is a liquid nitrogen gas discharge port. , 23 is a processing table for setting the sample 1, 24 is a supporting rod, 25 is a bellows for sealing the inside of the bonding processing chamber 19 while enabling the processing table 23 and the supporting rod 24 to move up and down, 26 is
A heater for heating the sample 1, 27 is a load rod,
28 is a load applying source for pressurizing the sample 1, 29 is a load meter for measuring the load condition from the load applying source to the load rod 27 and controlling the load, 30 is an exhaust pipe, A bonding chamber for performing diffusion bonding by pressurizing and heating a sample having a flat bonding surface in an ultrahigh vacuum environment is configured.

The sample introduction chamber 3, the transfer chamber 10, the cleaning chamber 13, and the bonding processing chamber 19 constitute independent chambers (containers), and each chamber has an exhaust system having a vacuum exhaust pump (not shown). are doing.

That is, in the ultra-high vacuum bonding apparatus of this embodiment, the sample introduction chamber 3, the transfer chamber 10, the cleaning chamber 13, and the bonding processing chamber chamber 19 are arranged in series and connected to each other, and Between the transfer chamber 10 and the transfer chamber 10 and the cleaning chamber
13 and between the cleaning chamber 13 and the bonding processing chamber 19
Between the transfer chamber 10 and the cleaning chamber 13, and between the cleaning chamber 13 and the bonding chamber 19,
It is electrically insulated.

The procedure of the joining process of the sample by the ultra-high vacuum joining apparatus having such a configuration is as follows.

The sample 1 is attached to the sample attachment cassette 2 and the flange portion 4 is attached.
To the sample introduction chamber 3. After that, the sample introduction room
3, Open the gate valve 5 between the transfer chambers 10 and push the rod 6 upward to place the sample 1 on the transfer manipulator 8.
Put. Subsequently, the gate valve 15 between the transfer chamber 10 and the cleaning chamber 13 is opened, and the sample 1 is set on the sample table 14 in the cleaning chamber 13. Therefore, glow discharge is generated between the glow mode plasma source and the chamber wall or the sample 1 in the cleaning chamber 13, and both flat surfaces (bonding surfaces) of the sample 1 are cleaned by discharge cleaning. At this time, the discharge cleaning was performed by closing the gate valves 15 at both ends of the cleaning chamber 13 and initially reaching a vacuum of about 10 ^-5 Torr, and then discharging argon while injecting argon into the chamber to about 10 ^-3 Torr. Generate.

After performing predetermined discharge cleaning, exhaust to about 10 ^-5 Torr, open the gate valves 15 at both ends of the cleaning chamber 13, and load the sample 1 into the bonding processing chamber 19 by the transfer manipulator 8 for processing. Set on the table 23.

After the predetermined sample 1 whose bonding surface has been cleaned is set on the processing table 23 by such a procedure, the gate valve 15 is closed to make the inside of the bonding processing chamber 19 reach a predetermined ultra high vacuum. In the environment, a predetermined load is applied to the sample 1 by the load application source 28, and at the same time, the sample heater 1 is heated to a predetermined temperature and diffusion-bonded to the sample 1.

After the joining process, the gate valve 15 is opened and the transfer manipulator 8 returns the workpiece to the transfer chamber 10.
The flange 12 is taken out of the apparatus and the desired joining process is completed.

According to this embodiment, the sample surface (bonding surface) can be cleaned by electric discharge cleaning suitable for bonding in a short time, and each of the sample introducing chamber 3, the transfer chamber 10, the cleaning chamber 13, and the bonding processing chamber 19 can be cleaned. Since each chamber has an exhaust system as an independent chamber, each chamber can reach a predetermined pressure in a short time. Therefore, after the sample 1 is carried in, the sample can be diffusion-bonded in a shorter time than before, and mass production of the bonding process is possible.

Particularly, in the ultra-high vacuum bonding apparatus of the present embodiment, the sample introduction chamber 3, the transfer chamber 10, the cleaning chamber 13, and the bonding processing chamber chamber 19 are arranged in series and connected, and the sample introduction chamber 3
Between the transfer chamber 10 and the transfer chamber 10, between the transfer chamber 10 and the cleaning chamber 13, and between the cleaning chamber 13 and the bonding processing chamber 19 by gate valves 5 and 15, respectively, and the transfer chamber 10 and The cleaning chamber 13 and the bonding processing chamber 19 are electrically insulated from each other, so that the following actions and effects can be obtained.

Since only the cleaning chamber 13 in which the glow discharge is executed has an insulating environment, the discharge can be made efficient and stable.

The gas required for discharge can be introduced while the cleanliness of the cleaning chamber 13 is increased, and the gas purity in the discharge chamber can be increased.

The sample 1 can be exchanged while the vacuum from the transfer chamber 10 to the bonding chamber 19 is maintained, and the throughput efficiency is improved.

Even if the cleaning chamber 13 and the bonding processing chamber 19 work at the same time, the mutual work does not affect the work in other rooms. In particular, while the cleaning chamber 13 is electrically heated,
It is necessary to cool the vicinity of the wall surface of the bonding processing chamber 19 with liquid nitrogen, but this does not affect the thermal environment.

It should be noted that, in the above-mentioned embodiment, an example of diffusion bonding is described as the bonding process, but other solid phase bonding techniques may be used.

Further, as the member to be processed, the example in which the flat plate-shaped samples shown in FIG. 1 are laminated and joined is described, but the shape of the joining member is not limited as long as the joining surface is flat and solid-state joining is possible. It does not matter even if it has a different shape.

〔The invention's effect〕

As described above, according to the present invention, it is possible to carry out solid-state bonding in a shorter time than before after carrying in a workpiece to be processed, which enables mass production of bonding processing and uniform cleaning of bonding surfaces. In addition, it is possible to provide an ultra-high vacuum bonding apparatus that can be performed with moderateness.

Further, according to the present invention, the efficiency and the stability of the cleaning are improved by using only the cleaning chamber as an insulating environment, and the ultra-high vacuum bonding which does not affect the work of the other chamber between the cleaning chamber and the bonding processing chamber. A device can be provided.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an ultra-high vacuum bonding apparatus according to an embodiment of the present invention, and FIG. 2 is a configuration diagram of the cleaning chamber of FIG. 1 ... Sample, 3 ... Sample introduction chamber, 5,15 ... Gate valve, 8 ... Transfer manipulator, 10 ... Transfer chamber, 13 ... Cleaning chamber, 16 ... Electrical insulating plate, 17 ... …
Cathode, 18 ... Anode, 19 ... Joining chamber, 23 ... Processing table,
26: heater, 27: load rod, 28: load source.

Claims (1)

(57) [Claims] 1. A chamber for introducing a member to be processed, a transfer chamber for the member to be processed, a cleaning chamber equipped with a glow discharge cleaning device for cleaning a bonding surface of the members to be bonded, and a member heated under pressure. In an ultra-high vacuum bonding apparatus having an exhaust system as a separate bonding chamber for solid-phase bonding, the introduction chamber, the transfer chamber, the cleaning chamber, and the bonding chamber are connected in series and arranged. Then, while partitioning between the introduction chamber and the transfer chamber, between the transfer chamber and the cleaning chamber, and between the cleaning chamber and the bonding chamber by gate valves, respectively, the transfer chamber and the cleaning chamber An ultra-high vacuum bonding apparatus characterized in that a space between the cleaning chamber and the bonding chamber is electrically insulated.