JP3193815B2 - Plasma processing apparatus and control method therefor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a plasma processing apparatus and a plasma processing apparatus.
And its control method.

[0002]

2. Description of the Related Art Conventionally, a parallel plate type plasma processing apparatus using a high frequency (RF) has been widely used as an apparatus for performing a plasma processing on an object to be processed, for example, a semiconductor wafer in a processing chamber. Reactive ion etching (R) in which two parallel plate type electrodes are arranged in a processing chamber
In the case of the IE) apparatus, a plasma is generated between the two electrodes by applying a high frequency to one or both electrodes, and a self-bias potential difference between the plasma and the object to be processed causes A plasma flow is incident on the processing surface of the object to be processed to perform an etching process.

However, in a conventional plasma processing apparatus such as the above-described parallel plate type plasma processing apparatus, ultra-fine processing in a submicron unit or a sub-half micron unit required as the semiconductor wafer is highly integrated. Is difficult to implement. In other words, in order to perform such a process using a plasma processing apparatus, it is important to control high-density plasma with high precision in a low-pressure atmosphere, and the plasma has a large area that can support a large-diameter wafer. It must be highly uniform. Further, in a plasma processing apparatus using an electrode, the electrode itself becomes a source of heavy metal contamination when plasma is generated, and this has been a problem particularly when ultrafine processing is required.

[0004] In order to establish a new plasma source in response to such technical requirements, a number of approaches have been taken from various angles so far. For example, EP-A-379828 describes the following. A high-frequency induction plasma generator using a high-frequency antenna is disclosed. In this high-frequency induction plasma generator, one surface of a processing chamber opposed to a wafer mounting table is formed of an insulator such as quartz glass, and a high-frequency antenna composed of, for example, a spiral coil is mounted on an outer wall surface thereof. Is applied, a high-frequency electromagnetic field is formed in the processing chamber, and electrons flowing in the electromagnetic field space collide with neutral particles of the processing gas, thereby ionizing the gas and generating plasma.

[0005]

In the above-described plasma processing apparatus, for example, in order to obtain a vertical pattern shape and a high selectivity in an etching process,
It is known that it is effective to lower the temperature of the processing surface of the object to be processed. In order to lower the temperature of the processing surface of the object to be processed, a cooling medium such as liquid nitrogen is generally supplied to a cooling jacket provided in a mounting table for mounting the object to be processed, and the transfer of cold heat from the cooling jacket is performed. Uses heat. In order to further increase the efficiency of the heat transfer, an inert material having a relatively good thermal conductivity such as a heat transfer medium, for example, helium, is provided between the chuck means and the object to be processed in order to fix the object to the mounting table. The method of supplying gas is adopted, but the object to be processed comes off the mounting table during processing in order to supply the heat transfer medium to the back surface of the object mounted in the processing container in a low-pressure atmosphere. It was an urgent task to show the countermeasures.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the conventional plasma processing apparatus, and is directed to a case where a heat transfer medium is supplied between a chuck means of a mounting table and an object to be processed. However, it is possible to stably fix the object to be mounted on the mounting table during the plasma processing, and therefore to improve the yield by the stable processing, a new and improved plasma processing apparatus and its control method. <br/>

[0007]

In order to solve the above-mentioned problems, high-frequency power is supplied to a high-frequency antenna, which is arranged according to a first aspect of the present invention and is disposed outside a processing chamber via an insulator. A plasma processing apparatus that excites an induction plasma in the processing chamber by applying the voltage to apply predetermined processing to a processing object disposed in the processing chamber, and a control method therefor include: Applying a DC voltage to the electrostatic chuck means for attracting and fixing to the apparatus, further applying high-frequency power to the high-frequency antenna, and supplying a heat transfer medium between the electrostatic chuck means and the object to be processed. I have. When the object to be processed is detached from the mounting table, the supply of the heat transfer medium between the electrostatic chuck means for attracting and fixing the object to the mounting table and the object to be processed is stopped. It is characterized in that the supply of high-frequency power is stopped, and then the application of DC current to the electrostatic chuck is stopped.

[0008] constructed in accordance with a second aspect of the present invention, the process chamber to generate plasma, plasma processing instrumentation for performing a predetermined process on a target object disposed in the processing chamber
The placement and its control method include applying a DC voltage to the electrostatic chuck means for adsorbing and fixing the object to be processed to the mounting table, and further generating plasma in the processing chamber. It is characterized in that a heat transfer medium is supplied in between. When the object to be processed is detached from the mounting table, the supply of the heat transfer medium between the electrostatic chuck means for suction-fixing the object to be mounted on the mounting table and the object to be processed is stopped,
Thereafter, the plasma is stopped, and thereafter, the application of the direct current to the electrostatic chuck means is stopped.

[0009]

According to the present invention, it is difficult to stably hold a workpiece by Coulomb force only by applying a DC voltage to electrostatic chuck means for attracting and fixing the workpiece to a mounting table.
If the heat transfer medium is supplied between the electrostatic chuck means and the object to be processed after further exciting the plasma in the processing chamber and stabilizing the suction and holding by the electrostatic chuck, the supply of the heat transfer medium It is possible to prevent an accident that the object to be processed comes off the electrostatic chuck due to the pressure.

Further , according to the present invention, the supply of the heat transfer medium to the space between the electrostatic chuck means and the object to be processed is stopped before the plasma is stopped. Even if the temperature decreases, it is possible to prevent an accident that the object to be processed comes off the electrostatic chuck due to the supply pressure of the heat transfer medium.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a plasma processing apparatus constructed in accordance with the present invention and a control method thereof will be described below in detail with reference to the accompanying drawings.

A plasma processing apparatus 1 shown in FIG. 1 has a processing container 2 formed of a conductive material, for example, aluminum or the like, and formed into a cylinder or a rectangle. Through the insulating plate 3,
A substantially columnar mounting table 4 for mounting an object to be processed, for example, a semiconductor wafer W is accommodated therein. A top portion of the processing container substantially opposed to the mounting surface of the mounting table 4 is made of an insulating material 5, for example, quartz glass or ceramic.
High-frequency antenna 6 in which a conductor, for example, a copper plate, aluminum, stainless steel, or the like is formed in a spiral coil shape on the outer wall surface of the antenna.
Is arranged. High-frequency energy of, for example, 13.56 MHz can be applied between both terminals (the inner terminal 6a and the outer terminal 6b) of the high-frequency antenna 6 via a matching circuit 8 from a high-frequency power supply 7 for plasma generation. Is configured.

A mounting table 4 for mounting an object to be processed W such as a semiconductor wafer is provided with a susceptor support 4a formed in a columnar shape of aluminum or the like, and is detachably provided thereon with bolts 4b or the like. And a susceptor 4c made of aluminum or the like. By thus arranging the susceptor 4c detachably, maintenance or the like can be easily performed.

The susceptor support 4a has cooling means,
For example, a cooling jacket 9 is provided, and a cooling medium such as liquid nitrogen
It is introduced through the refrigerant introduction pipe 11. Further, the liquid nitrogen circulated in the jacket and vaporized by the heat exchange action is discharged from the refrigerant discharge pipe 12 to the outside of the container. With this configuration, for example, the cold heat of -196 ° C. liquid nitrogen is transferred from the cooling jacket 9 to the semiconductor wafer W via the susceptor 4c, and the processing surface can be cooled to a desired temperature.

An electrostatic chuck 12 is formed on the wafer mounting portion on the upper surface of the susceptor 4c, which is formed in a substantially cylindrical shape, with an area substantially equal to the area of the wafer. The electrostatic chuck 12 is formed, for example, by sandwiching a conductive film 13 such as a copper foil between two polymer polyimide films in an insulating state. The conductive film 13 is connected to a variable DC high-voltage power supply 14 by a lead wire. ing. Therefore, this conductive film 13
By applying a high voltage to the electrostatic chuck 1
The semiconductor wafer W is configured to be able to be suction-held on the upper surface of the semiconductor wafer 2 by Coulomb force.

The susceptor support 4a and the susceptor 4
c, a gas passage 16 through which a heat transfer gas (back cooling gas) such as He is supplied from a gas source 15 to the back surface of the semiconductor wafer W or a joint of each member constituting the susceptor 4c. Are formed. In addition, an annular focus ring 17 is arranged around the upper edge of the susceptor 4c so as to surround the semiconductor wafer W.
The focus ring 17 is made of a high-resistance material that does not attract reactive ions, for example, ceramic or quartz glass, and functions to effectively cause the reactive ions to enter only the inner semiconductor wafer W.

Further, a high-frequency power supply 19 is connected to the susceptor 4c via a matching capacitor 18. At the time of processing, a high-frequency power of 13.56 MHz or an integer multiple thereof is applied to the susceptor 4c. By generating a bias potential between the substrate and the plasma, the plasma flow can be effectively applied to the processing surface of the target object. Above the susceptor 4c, a gas supply means 20 made of quartz glass or ceramics is arranged. The gas supply means 20 has the shape of a hollow disk having substantially the same area as the mounting surface of the susceptor 4c. A gas supply pipe 21 is connected to the gas supply pipe. A number of small holes 23 are formed in the lower surface 22 of the gas supply means 20 so that the etching gas can be uniformly blown out to the processing space below. In the hollow part of the gas supply means 20, there is provided a buffer disk 26 provided with a projection 25 protruding toward the gas supply pipe 21 at the center, and a gas source 27a, 27
b, the mixing of the etching gas supplied through the mass flow controller 28 is promoted, and the gas is blown into the processing chamber at a more uniform flow rate. Further, an annular projection 29 acting downward so as to concentrate the gas on the processing surface of the object to be processed is attached downward around the lower surface 22 of the gas supply means 20.

An exhaust pipe 30 is connected to the bottom wall of the processing vessel 2 so that the atmosphere in the processing vessel 2 can be exhausted by an exhaust pump (not shown). A gate valve (not shown) is provided, and the semiconductor wafer W is loaded and unloaded through the gate valve.

Further, below the susceptor between the electrostatic chuck 12 and the cooling jacket 9, there is provided a temperature control heater 32 housed in a heater fixing base 31. By adjusting the supplied electric power, the conduction of the cold heat from the cooling jacket 9 is controlled so that the temperature of the surface to be processed of the semiconductor wafer W can be adjusted.

Next, the configuration of the control system of the processing apparatus configured as described above will be described. A transmission window 34 made of a transparent material such as quartz glass is attached to one side wall of the processing chamber 2, and transmits light in the processing chamber to an optical sensor 36 via an optical system 35, and outputs light from the processing chamber. It is configured so that a signal relating to the generated emission spectrum can be sent to the controller 37. Further, the processing container 2 has a sensor 38 for detecting a pressure inside the processing chamber.
Is attached so that a signal relating to the pressure in the processing chamber can be sent to the controller 37.
The controller 37 sends a control signal based on a feedback signal from these sensors or a preset value to the plasma generating high-frequency power supply 7, the bias high-frequency power supply 15, the refrigerant source 10, the temperature control power supply 33, Cooling gas source 15, processing gas mass flow controller 2
8 to adjust the operating environment of the plasma processing apparatus optimally.

Next, with reference to FIGS. 2 and 3, an embodiment in which the control method of the plasma processing apparatus configured according to the present invention is applied to the above-described control system will be described.

Generally, as shown in FIG. 3, after a high DC voltage is applied from a power supply 33 to the electrostatic chuck 12 and the object W is mounted on the electrostatic chuck 12 on the susceptor 4c of the mounting table 4, (S1), the object to be processed W is held by suction by the generated Coulomb force (S2). However, at this stage, the adsorption force is unstable and weak, so that the susceptor 4c
When a heat transfer medium (back cooling gas) such as helium for promoting heat transfer characteristics from the substrate to the object to be processed W is supplied from the helium source 15 to the back surface of the object to be processed W via the gas passage 16 Since the inside of the processing container 2 is kept in a reduced-pressure atmosphere, the workpiece W may be detached from the electrostatic chuck 12 due to the supply pressure of the heat transfer medium.

However, according to the method of the present invention, before the heat transfer medium is supplied between the workpiece W and the electrostatic chuck 12 (S2), the high-frequency power is supplied from the high-frequency power source 7 via the matching circuit 8 to the high-frequency energy. When the plasma is supplied to the high-frequency antenna 6 and the plasma is excited in the processing chamber 2 (S3), the suction and holding of the workpiece W by the electrostatic chuck 12 becomes strong. Even when the workpiece W is supplied between the workpiece 12 and the workpiece W (S4), a situation in which the workpiece W comes off the electrostatic chuck 12 due to the supply pressure of the heat transfer medium can be effectively avoided. Thereafter, a bias potential is applied to the susceptor 4c (S5), and the plasma processing is started.

Similarly, as shown in FIG. 3, after the bias potential is turned off (S10), and after the plasma processing such as etching is completed, the object W to be processed held by the electrostatic chuck 12 is released. When the supply of high-frequency energy to the high-frequency antenna 6 is stopped while the heat transfer medium is supplied to the back surface of the processing object W, and the plasma in the processing container 2 is stopped, the processing of the processing object W by the electrostatic chuck 12 is stopped. Since the holding force becomes unstable or weakened, the processed object W may come off the electrostatic chuck 12. Therefore, according to the method of the present invention, first, the supply of the heat transfer medium to the back surface of the workpiece W is stopped (S11), and then the plasma in the processing chamber 2 is stopped (S12), and the electrostatic chuck 12 is stopped.
Therefore, as in the conventional method, as soon as the plasma is stopped, the object W is placed on the electrostatic chuck 12.
It is possible to effectively avoid the situation of deviating from the condition. Further, after the object to be processed W is stabilized on the mounting table 4 of the processing container 2, the power supply 33 of the electrostatic chuck 12 is turned off (S13), so that the object to be processed W is removed from the processing container 2 without being damaged. (S14).

The method of the present invention can be better understood by looking at the flow of the manufacturing process of the plasma processing apparatus. Next, referring to FIG. The operation will be described. The same components of the plasma etching apparatus described above are denoted by the same reference numerals, and detailed description thereof will be omitted.

As shown in the drawing, a load lock chamber 40 adjacent to a side wall of a processing vessel 2 of a high-frequency induction plasma processing apparatus 1 to which the present invention can be applied is opened and closed via a gate valve 39 which can be freely opened and closed. It is connected. The load lock chamber 40 is provided with a transfer device 41, for example, a transfer arm in which an aluminum arm is coated with conductive Teflon to take measures against static electricity. An exhaust pipe 42 is connected to the load lock chamber 40 through an exhaust port provided on the bottom surface, and is configured to be able to be evacuated by a vacuum pump 44 via a vacuum exhaust valve 43.

An adjacent cassette chamber 46 is connected to a side wall of the load lock chamber 40 via a gate valve 45 provided to be openable and closable. The cassette chamber 46 is provided with a mounting table 48 on which a cassette 47 is mounted. The cassette 47 is configured to store, for example, 25 semiconductor wafers W as objects to be processed as one lot. Have been. The cassette chamber 46
Is connected to an exhaust pipe 49 through an exhaust port provided on the bottom surface, and the inside of the room can be evacuated by a vacuum pump 44 via a vacuum exhaust valve 50. The other side wall of the cassette chamber 46 is configured to be in contact with the atmosphere via a gate valve 51 provided to be freely opened and closed.

Next, the operation of the plasma processing apparatus 1 configured as described above will be briefly described. First, the gate valve 51 provided between the processing chamber and the atmosphere is opened, and the cassette 47 storing the workpiece W is mounted on the mounting table 48 of the cassette chamber 46 by a transfer robot (not shown). The valve 51 closes. The vacuum exhaust valve 50 connected to the cassette chamber 46 is opened, and the vacuum pump 44 is opened.
As a result, the cassette chamber 46 is placed in a vacuum atmosphere,
Exhausted to ^-1 Torr.

Next, the gate valve 45 between the load lock chamber 40 and the cassette chamber 46 is opened, and the transfer arm 4 is opened.
The workpiece W is taken out of the cassette 47 placed in the cassette chamber 46 by 1, held and transported to the load lock chamber 40, and the gate valve 45 is closed. The vacuum exhaust valve 4 connected to the load lock chamber 40
3 is opened, and the load lock chamber 40 is evacuated to a vacuum atmosphere, for example, 10 ⁻³ Torr by the vacuum pump 44.

Next, the load lock chamber 40 and the processing vessel 2
The workpiece W is transported to the processing vessel 2 by the transport arm 41 and transferred to a pusher pin (not shown) on the susceptor 4c, and the transport arm 41 is load-locked. After returning to the chamber 40, the gate valve 39 closes. Thereafter, when a high-voltage DC voltage is applied to the electrostatic chuck 12, the pusher pin is lowered, and the workpiece W is mounted on the electrostatic chuck 12, the semiconductor wafer W is mounted and fixed on the susceptor 4c. During this time, the inside of the processing container 2 is opened through a vacuum pump 44 to open a vacuum atmosphere, e.g.
It is exhausted to 0 ^-5 Torr.

Then, CHF is supplied through the gas supply means 20.
_After a processing gas such as ₃ is introduced into the processing container 2, for example, 13.3 is supplied from the high frequency power supply 7 through the matching circuit 8.
High-frequency energy of 5 MHz is applied to the high-frequency antenna 6 to excite high-frequency plasma in the processing chamber 2. The preparation of the plasma processing is completed by the high-frequency plasma, and the suction holding force of the workpiece W by the electrostatic chuck 12 is ensured.
A back-cooling gas for heat transfer is supplied to the back surface of the substrate and each joint of the mounting table 4. At the same time, cold heat is supplied from the cooling jacket 9 to cool the processing surface of the semiconductor wafer W to a desired temperature. Thereafter, by applying a bias potential to the mounting table 4 from the high-frequency power supply 19, the workpiece W
Is subjected to plasma processing such as etching. At the time of processing, the temperature of the inner wall of the processing chamber is heated to 50 ° C. to 100 ° C., preferably 60 ° C. to 80 ° C., so that the reaction product can be prevented from adhering to the inner wall.

During the plasma processing, the emission spectrum in the processing chamber 2 is observed by the optical system 35 and the optical sensor 36 through the transmission window 34, and various conditions such as the pressure in the processing chamber 2 are detected by the sensor 38. Is observed, and an observation signal is sent to the controller 37. The controller 37 is configured to issue a command to each component of the plasma processing apparatus 2 based on these signals or a preset value, so that the plasma processing can be optimally controlled.

When the predetermined processing is completed, the application of the bias potential to the susceptor 4c is stopped, the supply of the processing gas is stopped, and the supply of the heat transfer gas to the back surface of the processing object W is stopped. The supply of high-frequency energy from the high-frequency power source 7 to the high-frequency antenna 6 is stopped with the supply pressure of the heat transfer gas no longer being applied to the back surface of the electrostatic chuck 12, and then the power supply 33 of the electrostatic chuck 12 is turned off. The attraction force of the object to be processed W is released.

Next, an inert gas such as nitrogen is introduced into the processing vessel 2 to replace the processing gas and reaction products in the processing vessel 2, and the gas is evacuated by the vacuum pump 39. After the residual processing gas and reaction products in the processing container 2 are sufficiently exhausted, the processing container 2
A gate valve 35 provided on the side surface of the processing container 2 is opened, and the transfer arm 37 is moved from the adjacent load lock chamber 36 to the position of the processing object W in the processing container 2 and lifted from the mounting table 4 by the pusher pin. The processing object W is received, transported to the load lock chamber 36, and the gate valve 35 is closed. In this load lock chamber 36,
The object to be processed W is heated to a room temperature, for example, 18 ° C. by the heater, and thereafter is carried out from the load lock chamber 36 to the atmosphere via the cassette chamber 41, thereby completing a series of operations.

In the embodiment shown in FIG. 1, the inner end 6a and the outer end 6b of the spiral coil as shown in FIG.
Although the high-frequency power supply 7 and the matching circuit 8 are connected between them, the present invention is not limited to such a configuration. For example, as shown in FIG. 6, it is also possible to adopt a configuration in which the high frequency power supply 7 and the matching circuit 8 are connected only to the outer end 6b of the spiral coil. With such a configuration, it is possible to generate good high-frequency induction plasma in the processing chamber 2 even in a lower-pressure atmosphere.

Next, with reference to FIG. 7 to FIG. 16, embodiments relating to various device configurations for optimally controlling the state of plasma excited in the processing vessel 2 via the high-frequency antenna 6 will be described. In each of the drawings attached to this specification, components having the same functions are denoted by the same reference numerals, and detailed description thereof will be omitted.

FIG. 7 shows another embodiment of the high-frequency antenna 6 attached to the outer wall surface of the insulating material 5. In this embodiment, a part 6c of the high-frequency antenna 6 composed of a spiral coil is double-wound, and its overlapping part 6b
And 6c so that a stronger electromagnetic field can be formed. By partially changing the number of turns of the spiral coil in this way, the density distribution of the plasma excited in the processing chamber 2 can be adjusted.
In the illustrated example, the overlapping portion of the high-frequency antenna 6 is set at the outer peripheral portion. However, the overlapping portion can be set at an arbitrary portion of the high-frequency antenna 6 according to a required plasma density distribution. In the illustrated example, the high-frequency antenna 6
Although the overlapped portion is simply configured as a double winding, it is possible to set an arbitrary number of windings according to a required plasma density distribution.

FIG. 8 shows the mounting table 4 inside the processing vessel 2.
In this embodiment, for example, second electrodes 53a and 53b made of, for example, aluminum are radially arranged at equal intervals so as to surround. These electrodes 53a and 53b are connected to high-frequency power sources 55a and 55b via matching circuits 54a and 54b, respectively.
55b is connected. With this configuration, the mounting table 4
In addition to the high-frequency bias energy applied to the second electrode 53a, the high-frequency bias energy can also be applied to the second electrodes 53a and 53b that radially surround the processing surface of the processing object W from the outer periphery in the radial direction at equal intervals. Therefore, by adjusting the magnitude, amplitude, phase, frequency, and the like of each high-frequency energy, it is possible to optimally control the state of the plasma excited in the processing chamber 2.

FIG. 9 shows an embodiment in which a mesh-like electrode 56 made of, for example, silicon or aluminum is arranged inside the processing container 2 below the gas blowing surface of the gas supply means 20 and above the mounting table 4. It is shown. A variable power supply 57 is connected to the electrode 56, and a distribution of an electric field formed by the action of the high-frequency antenna 6 in the processing container 2 is controlled by flowing an appropriate current through the electrode 56, and the processing container 2 It is possible to excite a plasma having a desired density distribution inside.

In the embodiment shown in FIG. 1, the high-frequency antenna 6 is disposed on the upper surface of the processing container 2 via the insulating material 5 such as quartz glass, but the present invention is not limited to this embodiment. For example, as shown in FIG.
It is also possible to adopt a configuration in which a part of the side wall is made of an insulating material 58 such as quartz glass or ceramics, and a second high-frequency antenna 59 is attached to the outer wall surface of the insulating material 58. These second high-frequency antennas 59 are preferably arranged in a coil shape, and are configured so that high-frequency energy can be applied from a high-frequency power supply 61 connected via a matching circuit 60. With this configuration, it is possible to excite the plasma also from the side wall portion of the processing vessel 2. By adjusting the high-frequency energy applied to each antenna, a high-density and uniform plasma can be produced with a desired density distribution. 2, it is possible to generate plasma in higher accuracy.

As shown in FIG. 11, a part of the mounting table 4 is made of an insulating material 62 such as quartz glass, a high-frequency antenna 63 is provided on the lower surface thereof, and a high-frequency power source 68 connected via a matching circuit 67. It is also possible to adopt a configuration in which higher frequency energy is applied to the high frequency antenna 63.
With such a configuration, it is possible to excite the plasma also from the lower surface of the mounting table 4 of the processing container 2. Therefore, by adjusting the high-frequency energy applied to each antenna, a high-density and uniform plasma can be formed in a desired density distribution. Can be generated in the processing container 2, and more accurate plasma processing can be performed.

As shown in FIG. 12, a focus ring arranged around the upper surface of the mounting table 4 is made of an insulating material 69 such as quartz glass or ceramics, and a high frequency antenna 70 is arranged around the focus ring. It is also possible to apply a high-frequency energy from a high-frequency power supply 72 connected to the power supply via a matching circuit 71.
With such a configuration, it is possible to excite the plasma also from the periphery of the mounting table 4 of the processing container 2. Therefore, by adjusting the high-frequency energy applied to each antenna, a high-density and uniform plasma can be formed in a desired density distribution. Can be generated in the processing container 2, and more accurate plasma processing can be performed.

When a relatively large area object such as an LCD is subjected to plasma processing, a plurality of high frequency antennas 74a, 74b, 74c and 75d are arranged on the upper surface of the processing container 2 as shown in FIG. The matching circuit 75 is attached to the outer wall of the insulating material 5 and is attached to each high frequency antenna.
It is also possible to adopt a configuration in which high-frequency energy is applied from high-frequency power sources 76a, 76b, 76c, and 76d connected via a, 75b, 75c, and 75d. With such a configuration, it is possible to excite high-density and uniform high-frequency plasma even in a large processing container 2 for processing a target having a relatively large area.

In the above-described embodiment, the configuration is adopted in which the object W is mounted on the upper surface of the mounting table 4 and the plasma is excited by the high-frequency antenna 6 arranged on the upper surface of the processing container 2. However, the present invention is not limited to such a configuration.
For example, a face-down method as shown in FIG. 14 can be adopted. In this apparatus configuration, each component of the processing apparatus shown in FIG. 1 is arranged almost upside down, and components having the same functions as those shown in FIG. 1 are denoted by the same reference numerals. At the same time, “′” is added to identify the components in FIG. However, in the case of the face-down type apparatus shown in FIG. 14, a support mechanism 76 that can move up and down to support the workpiece W from below and the workpiece W
It is preferable to provide a pusher pin mechanism 77 that can be moved up and down for further removal. By adopting such a configuration, the processing surface of the processing target W can be protected from contamination such as fine particles, so that the yield and the throughput can be further improved.

Alternatively, as shown in FIG. 15, a substantially cylindrical processing vessel 2 ″ is vertically arranged, insulating materials 5 ″ are provided on both sides thereof, and a high-frequency antenna 6 ′ is provided on the outer wall surface of each insulating material 5 ″. It is also possible to adopt a configuration in which the workpiece W is fixed by suction via electrostatic chucks 12 ″ to both sides of a mounting table 4 ″ that is disposed substantially vertically in the center of the processing container 2 ″. The components of the apparatus shown in Fig. 15 are substantially the same as the components of the processing apparatus shown in Fig. 1, and those having the same functions as those of the components shown in Fig. 1 are the same. With reference numerals, FIG.
In order to distinguish from the constituent elements of the above, “” is added. By adopting such a configuration, it is possible to simultaneously process a plurality of workpieces W, and since the surface to be processed of the workpiece W is vertically arranged, the surface to be processed is not contaminated by fine particles and the like. Protected, and the yield and throughput can be further improved.

FIG. 16 shows still another embodiment of the plasma processing apparatus according to the present invention. In this embodiment, the susceptor 4 is completely separated from the wall surface of the processing vessel 2, that is, is mounted on an elevating mechanism 78 which can move up and down, and supplies the susceptor 4 with a cold heat source or a heat transfer gas. Roads or various electric lines are disposed inside the elevating mechanism 78. By adopting such a configuration, the surface to be processed of the susceptor 4 is moved up and down with respect to the high frequency antenna 6 which is a plasma generation source to adjust the surface to be processed into a space having an optimum plasma density distribution. Processing can be performed.

Although the preferred embodiment of the present invention has been described by taking a plasma etching apparatus as an example, the present invention is not limited to such an embodiment, but may be a plasma CVD apparatus, a plasma ashing apparatus, a plasma sputtering apparatus, or the like. The present invention can be applied to other plasma processing apparatuses, and the object to be processed is not limited to a semiconductor wafer but can be applied to an LCD substrate and other objects to be processed.

[0048]

As described above, the suction and holding of the object by the Coulomb force is unstable only by applying the DC voltage to the electrostatic chuck means for attracting and fixing the object to be mounted on the mounting table. According to the present invention, a plastic
After exciting the zuma and stabilizing the suction and holding by the electrostatic chuck, the heat transfer medium is supplied between the electrostatic chuck means and the object to be processed. It is possible to prevent an accident such as detachment from the electric chuck.

According to the present invention, the supply of the heat transfer medium to the space between the electrostatic chuck means and the object to be processed is stopped before the plasma is stopped. Even if the temperature decreases, it is possible to prevent an accident that the object to be processed comes off the electrostatic chuck due to the supply pressure of the heat transfer medium.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a plasma processing apparatus to which a control method for a plasma processing apparatus configured according to the present invention can be applied.

FIG. 2 is a flowchart showing a control method of the plasma processing apparatus configured according to the present invention at the start of plasma processing.

FIG. 3 is a flowchart showing a control method of the plasma processing apparatus configured based on the present invention when the plasma processing is stopped.

FIG. 4 is a configuration diagram of a manufacturing system incorporating the plasma processing apparatus shown in FIG.

FIG. 5 is a plan view showing one embodiment of a high-frequency antenna portion applicable to the processing device of FIG. 1;

FIG. 6 is a plan view showing another embodiment of a high-frequency antenna portion applicable to the processing device of FIG. 1;

FIG. 7 is a schematic cross-sectional view showing an embodiment of a processing apparatus to which a high-frequency antenna having another configuration is attached.

FIG. 8 is a schematic sectional view showing an embodiment of a processing apparatus in which a second electrode is mounted in a processing container.

FIG. 9 is a schematic sectional view showing another embodiment of the processing apparatus in which the second electrode is mounted in the processing container.

FIG. 10 is a schematic cross-sectional view illustrating an embodiment of a processing apparatus in which a second high-frequency antenna is attached to a side wall of a processing container.

FIG. 11 is a schematic cross-sectional view showing an embodiment of a processing apparatus in which a second high-frequency antenna is mounted in a mounting table of a processing container.

FIG. 12 is a schematic cross-sectional view showing an embodiment of a processing apparatus in which a second high-frequency antenna is mounted around a focus ring of a mounting table of a processing container.

FIG. 13 is a schematic cross-sectional view showing an embodiment of a processing apparatus in which a plurality of high-frequency antennas are arranged on an outer wall surface of an insulating material of a processing container.

FIG. 14 is a schematic sectional view showing an embodiment of a face-down processing apparatus.

FIG. 15 is a schematic cross-sectional view showing an embodiment of a processing apparatus in which objects to be processed are arranged vertically.

FIG. 16 is a schematic cross-sectional view illustrating an embodiment of a processing apparatus in which a mounting table is configured separately from a processing container.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 2 Processing container 4 Mounting table 5 Insulating material 6 High frequency antenna 7 High frequency power supply 8 Matching circuit 20 Gas supply means 34 Transmission window 36 Optical sensor 37 Controller 38 Pressure sensor W Semiconductor wafer

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H01L 21/3065 C23C 16/509 H01L 21/68

Claims (4)

(57) [Claims] A high-frequency power is applied to a high-frequency antenna disposed outside a processing chamber via an insulator to excite an induction plasma in the processing chamber so that an object to be processed disposed in the processing chamber is excited. In controlling a plasma processing apparatus for performing a predetermined process, a DC voltage is applied to electrostatic chuck means for attracting and fixing the object to be processed to a mounting table, and a high-frequency power is further applied to the high-frequency antenna. A heat transfer medium is supplied between the electric chuck means and the object to be processed, and when the object to be processed is detached from the mounting table, the electrostatic chuck means for attracting and fixing the object to be processed to the mounting table, and The supply of the heat transfer medium to the object to be processed is stopped, then the application of the high-frequency power to the high-frequency antenna is stopped, and then the application of the direct current to the electrostatic chuck is stopped. Wherein the method of controlling a plasma processing apparatus. 2. A method for controlling a plasma processing apparatus that generates plasma in a processing chamber and performs a predetermined process on a processing target disposed in the processing chamber, the electrostatic processing that suction-fixes the processing target to a mounting table. Applying a DC voltage to the chuck means, and further generating a plasma in the processing chamber, then supplying a heat transfer medium between the electrostatic chuck means and the object to be processed, and placing the object from the mounting table When detaching, the supply of the heat transfer medium between the electrostatic chuck means for attracting and fixing the object to be mounted on the mounting table and the object to be processed is stopped, and then the plasma is stopped. A method for controlling a plasma processing apparatus, comprising: stopping application of a direct current to a unit. 3. A processing chamber, which is disposed outside the processing chamber via an insulator.
By applying high-frequency power to the high-frequency antenna
Excitation plasma is excited in the processing chamber of
A plasma processing apparatus for performing a predetermined process on the disposed object to be processed;
And Electrostatic chuck means for attracting and fixing the object to be processed on a mounting table
To the high frequency antenna.
After applying the wave power, the electrostatic chuck means and the
Supply a heat transfer medium between the processing body and When detaching the object from the mounting table,
The body is adsorbed on the mounting table Electrostatic chuck means for determining
Stop supplying the heat transfer medium to the processing object, and then
Stop applying high frequency power to the high frequency antenna
And then apply a DC current to the electrostatic chuck means.
Controller for controlling the plasma processing apparatus to stop processing
A plasma processing apparatus, comprising: 4. A plasma is generated in a processing chamber, and the processing is performed.
Plasma for subjecting an object placed in a room to a predetermined process
A processing device, Electrostatic chuck means for attracting and fixing the object to be processed on a mounting table
And apply a DC voltage to the plasma
After the generation, the electrostatic chuck means and the object to be processed
Supply a heat transfer medium between When detaching the object from the mounting table,
An electrostatic chuck means for adsorbing and fixing a body to a mounting table;
Stop supplying the heat transfer medium to the processing object, and then
Stop the plasma, and then contact the electrostatic chuck means.
Plasma processing equipment to stop the application of direct current
Having a controller for controlling the plasma processing.
Equipment.