JP2515947B2 - Superconducting element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of superconducting electronics such as superconducting switching elements, and more particularly to superconducting elements applied to the fields of digital circuits and analog circuits.

[0002]

2. Description of the Related Art As a superconducting element using an oxide-based material, a superconducting element in which a crystal grain boundary of an oxide superconductor is a weak coupling portion and a superconducting element in which two oxide superconducting thin films are connected by a noble metal Has been obtained. Furthermore, Applied Physics Letters, Vol. 55, p. 2032 (1989)
YBa ₂ Cu ₃ O _y crystallographically similar PrBa ₂ Cu ₃ O _y as a weak coupling part and sandwiched between YBa ₂ Cu ₃ O _y thin films, that is, YBa ₂ Cu ₃ O. _y- PrBa ₂ C
u ₃ layered structure of O _y -YBa ₂ Cu ₃ O _y is described. It was shown by the current-voltage characteristics during microwave irradiation that this structure has weak coupling characteristics. Further, a superconducting element for controlling superconductivity induced by stacking BaBi _1-x Pb _x O _3-y having different compositions by an electric field is disclosed in Japanese Patent Application Laid-Open No. 1-205.
578.

[0003]

However, according to the above-mentioned conventional technique, YBa ₂ Cu ₃ O _y -PrBa ₂ Cu ₃ O _y -YBa ₂ Cu is used.
BaO _1-x Pb _x O with different laminated structure or composition of ₃ O _{y
Since a 3-y} laminated structure is required, it is difficult to manufacture these laminated structures, and the laminated structure is likely to include lattice defects and element diffusion that lead to deterioration of device performance. Also, BaBi _1-x
In an element in which superconductivity induced by stacking Pb _x O _3-y is controlled by using an electric field, the electric field effect is small and the amplification characteristic or switching characteristic is small in order to control the superconductivity induced through a layer having a high carrier concentration. bad.

It is an object of the present invention to utilize a property peculiar to an oxide semiconductor having a layered perovskite structure to bring a substance not having a complicated crystal structure into contact with a single-layer oxide semiconductor so that To provide a superconducting element that does not require a layered structure that is difficult to fabricate by using superconductivity induced by the electric field, and to control the induced superconductivity by an electric field to obtain an element having good amplification characteristics or switching characteristics. To provide.

[0005]

As shown in FIG. 2, the above object is to achieve an oxide-based semiconductor containing copper formed on a substrate.
The body layer and the semiconductor layer are provided so as to face each other.
The first and second electrodes, and at least the semiconductor layer
Control electrode for controlling current flowing in the semiconductor layer
In a superconducting element formed through an insulating film,
The first and second electrodes are formed by using the non-superconducting state of the substance
It is achieved by As the oxide-based semiconductor layer
The oxide semiconductor R _{1 + x} Ba _2−x Cu ₃ O _y (R is a rare earth element other than Pr, 0.3 <x <0.8, 6 <y <
8), oxide semiconductor Pr _{1 + x} Ba _2-x Cu ₃ O _y (0 ≦ x ≦ 0.5, 6 <y <
8), oxide semiconductor Y _1-x Pr _x Ba ₂ Cu ₃ O _y (0.6 ≦ x ≦ 1, 6 <y <
8), the oxide semiconductor Bi ₂ Sr ₂ Ca _1-x R _x Cu ₂ O _y (R is a rare earth element, 0.
6 ≦ x ≦ 1, 8 <y <8.5), and RBa ₂ Cu ₃ O
Any of _y (R is Y or a rare earth element, 6.0 <y <6.4) is used.

[0006]

[Function] Oxide semiconductor R_{1 + x}Ba_2-XCu₃O_y(R is Pr
Rare earth elements, excluding 0.3 <x <0.8, 6 <y <
8), oxide semiconductor Pr_{1 + x}Ba_2-xCu₃O_y(0 ≦ x ≦
0.5, 6 <y <8), oxide semiconductor Y_1-xPr_xBa₂
Cu₃O_y(0.6 ≦ x ≦ 1, 6 <y <8), oxide semiconductor
Body Bi₂Sr₂Ca_1-xR_xCu₂O_y(R is a rare earth element,
0.6 ≦ x ≦ 1, 8 <y <8.5), andAnd RBa₂C
u₃O_y(R is Y or a rare earth element, 6.0 <y <6.
Any of 4)9A non-superconducting substance10, 11To
Contact and oxide semiconductor9Non-superconducting material in contact with
Substance10, 11A groove with a width of 1 μm or less was provided
Depending on the configuration, the above oxide semiconductor9Electronic state is non-super
Conductive substance10, 11And the above oxide semiconductor9Interface
Non-superconducting substances in the vicinity10, 11The effect of
receive. This is the above oxide semiconductor9Carrier density of
Non-superconducting substance10, 11Carrier density is different
ForAnd bothIt occurs because the vacuum level of the substance is different. That
As a result, the above oxide semiconductor9And non-superconducting substances10,
11Because the Fermi level moves near the interface with
Charge transfer gap is brokenFor,Oxide semiconductor9
Shows superconductivity near the interface.Oxide
In the semiconductor 9, induced between two non-superconducting substances
Superconducting current flows due to superconductivity,
can get. Furthermore, a carrier that can move inside the oxide semiconductor
The density of a is lower than when using an oxide superconductor
(10 ¹⁹ Pieces / cm ³ Degree), therefore induced by the electric field
When controlling superconductivity, the effect of the electric field is great.
Kii. Therefore, good device characteristics can be obtained.

[0007]

EXAMPLES Example 1 Hereinafter, the present invention will be described using an example of a field effect superconducting three-terminal element.

The structure of this device is shown in FIG. SrTiO ₃
La _1.5 Ba formed on the (110) plane-oriented single crystal substrate 1
_1.5 Cu ₃ O _y Au thin film (source) 3 on the semiconductor thin film 2,
An Au electrode (drain) 4 is formed, and the dimension between 3 and 4 is 0.1.
A μm gap was formed. Then, a CaF ₂ insulating film 6 is provided and an Au electrode (gate) 7 is formed.

The La _1.5 Ba _1.5 Cu ₃ O _y thin film was formed by a reactive vapor deposition apparatus using microwave oxygen plasma. The atmospheric gas is pure oxygen gas, and the total pressure is 8 × 1.
Was 0- ⁵ torr. The raw materials are La, Ba, and
It was evaporated using Cu and a Knudsen cell. Irradiation with microwaves of 2.45 GHz and 120 W was performed to increase the oxidizing power. The substrate temperature during film formation was 450 ° C. The La _1.5 Ba _1.5 Cu ₃ O _y thin film 2 formed under such conditions has crystallinity in which the (110) plane is perpendicular to the substrate surface. A reactive vapor deposition apparatus was also used for forming the Au electrode and the CaF ₂ insulating film, but the film was formed in a vacuum without irradiation with microwaves. Au was evaporated using an electron gun vapor deposition device.

The manufacturing process of the superconducting device was as follows. That is, the La _1.5 Ba _1.5 Cu ₃ O _y thin film 2 is replaced with SrTiO ₃
It was formed on the (110) plane-oriented single crystal substrate 1. The film thickness was 100 nm. A bar-shaped Au thin film was formed on this by a mask vapor deposition method. The Au thin film had a thickness of 30 nm and a size of 0.2 × 5 mm. After applying an electron beam resist on this, an Au beam was drawn in parallel with the 0.2 mm side by an electron beam drawing device.
A 0.1 μm linear pattern was drawn in the center of the electrode. A groove-shaped pattern was formed on the Au thin film based on the resist pattern by the reactive ion beam etching method to form Au electrode (source) 3 and Au electrode (drain) 4, respectively. A CaF ₂ insulating film 6 was formed on this groove-shaped channel 5 to form a gate insulating film. Au is vapor-deposited on the gate insulating film,
The electrode (gate) 7 was used.

The source of this superconducting element at 60K,
In the current-voltage characteristics between drains, about 1.0 mA
Of superconducting current flows, and a voltage is generated for a bias current higher than this. Furthermore, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.2 mA,
A voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Similar characteristics were also obtained when a device was manufactured by using a rare earth element other than Pr instead of La. In this case, rare earth elements other than Eu were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Further, instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb, I
A device using n, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

Example 2 In the same thin film structure as in Example 1, only the distance between the Au electrode (source) 3 and the Au electrode (drain) 4 was changed, and the line width was set to 0.5 μm. The manufacturing process and the like are the same as in Example 1. In the current-voltage characteristic between the source and the drain at 30 K of this superconducting element, a superconducting current of about 0.8 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.15 A, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of La, Pr
Similar characteristics were obtained when devices were manufactured using rare earth elements other than. In this case, rare earth elements other than Eu were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Furthermore, instead of Au, Ag, Bi, Sb, PbBi, P
A device using b, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

Example 3 In the same thin film structure as in Example 1, only the distance between the Au electrode (source) 3 and the Au electrode (drain) 4 was changed, and the line width was set to 1 μm. The manufacturing process and the like are the same as in Example 1. 4. of this superconducting element
In the current-voltage characteristics between the source and the drain at 2K, a superconducting current of about 0.2 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.01 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of La, Pr
Similar characteristics were obtained when devices were manufactured using rare earth elements other than. In this case, rare earth elements other than Eu were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Furthermore, instead of Au, Ag, Bi, Sb, PbBi, P
A device using b, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 4> In the same thin film structure as in Embodiment 1, only the composition of the oxide semiconductor was changed to obtain La _1.3 Ba _1.7.
Cu ₃ O _y was used. The manufacturing process and the like are the same as in Example 1. In the current-voltage characteristic between the source and the drain at 60 K of this superconducting element, a superconducting current of about 1.3 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current is reduced to 0.3 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Similar characteristics were also obtained when a device was manufactured by using a rare earth element other than Pr instead of La. In this case, Eu
Other rare earth elements were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Further, instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb, In, Al, V,
An element using Ta and W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 5> In the same thin film structure as in Embodiment 1, only the composition of the oxide semiconductor was changed to obtain La _1.7 Ba _1.3.
Cu ₃ O _y was used. The manufacturing process and the like are the same as in Example 1. In the current-voltage characteristic between the source and the drain at 60 K of this superconducting element, a superconducting current of about 0.8 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current is reduced to 0.1 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. In this case, rare earth elements other than Eu were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Furthermore, A
Instead of u, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb,
A device using In, Al, V, Ta and W was also manufactured, but similar characteristics were obtained also in this case.

<Sixth Embodiment> In the same thin film structure as in the first embodiment, only the oxide semiconductor is changed to Pr _1.5 Ba _1.5 Cu ₃ O _y.
Was used. However, Pr, Ba, and Cu in the metal state were used as raw materials for the semiconductor thin film, and Pr was evaporated by using an electron gun vapor deposition apparatus. The other manufacturing steps are the same as in Example 1.

The source of this superconducting element at 60K,
The current-voltage characteristics between the drains are about 0.5 mA.
Of superconducting current flows, and a voltage is generated for a bias current higher than this. Furthermore, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.05 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi, P
A device using b, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 7> In the same thin film structure as in Embodiment 6, only the composition of the oxide semiconductor was changed to obtain Pr _1.1 Ba _1.9.
Cu ₃ O _y was used. The current-voltage characteristics between the source and drain at 60 K of this superconducting element are about 0.
A superconducting current of 7 mA flows, and a voltage is generated for a bias current higher than this. 200m to the gate
When a voltage of V is applied, the superconducting current decreases to 0.1 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi,
A device using Pb, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

Example 8 In the same thin film structure as in Example 6, only the oxide semiconductor was changed and PrBa ₂ Cu ₃ O _y was used. However, Pr, Ba, and Cu in the metal state were used as raw materials for the semiconductor thin film, and Pr was evaporated by using an electron gun vapor deposition apparatus.

The source of this superconducting element at 60K,
The current-voltage characteristic between the drains is about 0.8 mA.
Of superconducting current flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.15 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi, P
A device using b, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 9> In the same thin film structure as in Embodiment 1, only the oxide semiconductor is changed to Y _0.4 Pr _0.6 Ba ₂ Cu.
₃ O _y was used. However, Y, Pr, Ba, and Cu in the metallic state were used as raw materials for the semiconductor thin film, and Y and Pr were vaporized by using an electron gun vapor deposition apparatus.

The source of this superconducting element at 60K,
About 2.0mA in current-voltage characteristics between drains
Of superconducting current flows, and a voltage is generated for a bias current higher than this. When a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.4 mA,
A voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi, Pb, S
An element using n, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 10> In the same thin film structure as in Embodiment 9, an Au electrode (source) 3 and an Au electrode (drain) 4 are provided.
Only the distance between them was changed, and the width of the line was set to 0.5 μm.
The manufacturing process and the like are the same as in Example 9. In the current-voltage characteristic between the source and the drain at 30 K of this superconducting element, a superconducting current of about 1.2 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.2 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb, In, Al, V,
An element using Ta and W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 11> In the same thin film structure as that of Embodiment 9, an Au electrode (source) 3 and an Au electrode (drain) 4 are provided.
Only the distance between them was changed, and the line width was set to 1 μm. The manufacturing process and the like are the same as in Example 9. In the current-voltage characteristics between the source and drain at 4.2K of this superconducting element, a superconducting current of about 0.5 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.01 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb, In, Al,
An element using V, Ta and W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 12> In the same thin film structure as in Embodiment 1, only the oxide semiconductor is changed, and Bi ₂ Sr ₂ NdYCu is used.
₃ Oy was used. However, Bi, Sr, Nd, and Cu in the metallic state were used as the raw materials of the semiconductor thin film, Y was evaporated using an electron gun vapor deposition apparatus, and the other raw materials were evaporated using a Knudsen cell. The other steps are the same as those described in Example 1. The current-voltage characteristics between the source and drain at 50 K of this superconducting device are about 1.0.
A superconducting current of mA flows, and a voltage is generated for a bias current higher than this. 100 mV to the gate
When the above voltage is applied, the superconducting current is reduced to 0.2 mA, and the voltage is generated by the bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Similar characteristics were obtained when Y or another rare earth element was used instead of Nd. In this case, the rare earth elements other than Eu and Y were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Further, instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, G
An element using a, Nb, In, Al, V, Ta, W was also manufactured,
Similar characteristics were obtained in this case as well.

<Embodiment 13> In the same thin film structure as that of Embodiment 12, only the composition of the oxide semiconductor is changed, and Bi ₂ Sr ₂ is added.
Ca _0.4 Nd _0.6 YCu ₃ O _y was used. 6 of this superconducting element
In the current-voltage characteristics between the source and drain at 0K, a superconducting current of about 1.8 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current is reduced to 0.3 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Similar characteristics were obtained when Y or another rare earth element was used instead of Nd. In this case, the rare earth elements other than Eu and Y were evaporated using an electron gun vapor deposition device instead of the Knudsen cell. Furthermore, instead of Au, Ag, Bi, Sb, PbBi, P
A device using b, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, but similar characteristics were obtained in this case as well.

<Embodiment 14> In the same thin film structure as that of Embodiment 12, an Au electrode (source) 3 and an Au electrode (drain).
Only the distance between 4 was changed, and the line width was set to 0.5 μm. The manufacturing process and the like are the same as in Example 12. In the current-voltage characteristics between the source and drain at 60 K of this superconducting element, a superconducting current of about 0.3 mA flows,
A voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.01 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, Au
Instead of Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb,
A device using In, Al, V, Ta and W was also manufactured, but similar characteristics were obtained also in this case.

<Embodiment 15> In the same thin film structure as Embodiment 12, an Au electrode (source) 3 and an Au electrode (drain).
Only the distance between 4 was changed and the line width was 1 μm. The manufacturing process and the like are the same as in Example 12. In the current-voltage characteristic between the source and the drain at 25K of this superconducting element, a superconducting current of about 0.2 mA flows, and a voltage is generated for a bias current higher than this. Further, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.01 mA, and a voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Also, instead of Au, Ag, Bi, Sb, PbBi, Pb, Sn, Zn, Ga, Nb, In, Al,
An element using V, Ta and W was also manufactured, but similar characteristics were obtained in this case as well.

<Example 16> In the same thin film structure as in Example 1, only the oxide semiconductor was changed, and YBa ₂ Cu ₃ O _{6 + y was used.}
Was used. However, Y, Ba, and Cu in a metallic state were used as raw materials for the semiconductor thin film, and Y was evaporated by using an electron gun vapor deposition apparatus. In addition, after forming the oxide thin film, in order to sufficiently deplete oxygen at the chain site, in Ar, 4
Annealed at 50 ° C. for 6 hours. All other steps are the same as described in Example 1.

The source of this superconducting element at 30K,
In the current-voltage characteristic between drains, about 0.9 mA
Of superconducting current flows, and a voltage is generated for a bias current higher than this. Furthermore, when a voltage of 200 mV is applied to the gate, the superconducting current decreases to 0.1 mA,
A voltage is generated with a bias current higher than this. As described above, the present superconducting element has the basic characteristics as a three-terminal element. Similar characteristics were also obtained when a rare earth element was used instead of Y. Furthermore, instead of Au, Ag, Bi,
A device using Sb, PbBi, Pb, Sn, Zn, Ga, Nb, In, Al, V, Ta, W was also manufactured, and similar characteristics were obtained in this case as well.

Although the thin film forming method in the examples was the reactive vapor deposition method, it goes without saying that other film forming methods such as the laser ablation method, the sputtering method and the MOVPE method can be applied. In this embodiment, SrTiO ₃ is used as the substrate, but MgO and LaAlO are used.
Needless to say, it can be formed on another substrate such as ₃ .
Furthermore, in the present embodiment, the description has been made on the three-terminal element, but it goes without saying that another superconducting element such as a weak coupling element which is a constituent element of the three-terminal element can be manufactured.

[0032]

As described in the embodiments, the device having the structure according to the present invention has the following effects.

(1) The superconductivity induced in the oxide semiconductor is used by bringing the oxide semiconductor into contact with a simple non-superconducting substance having a crystalline structure and setting the distance between the non-superconducting substances to 1 μm or less. Since it is a device that operates, a complicated laminated structure is not required, and the device can be simply manufactured.

(2) Since the components other than the oxide semiconductor can be formed at room temperature, diffusion near the interface is reduced and the device performance is improved.

(3) Since the superconducting exudate is controlled, the effect of the electric field is great, and the device performance is good.

(4) A superconducting logic circuit and a memory circuit using the above superconducting element can be constructed.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an embodiment of the present invention.

FIG. 2 is a layout diagram for conducting a principle experiment on superconducting induction and superconducting exudation.

[Explanation of symbols]

1. SrTiO ₃ substrate 2. Oxide semiconductor thin film 3. Non-superconducting conductive electrode (source) 4. Non-superconducting conductive electrode (gate) 5. Channel 6. Insulating film 7. Electrode (gate) 8. SrTiO ₃ substrate 9. Oxide semiconductor thin film 10. Non-superconducting conductive electrode (source) 11. Non-superconducting conductive electrode (gate)

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Tokumi Fukasawa, Tokumi Fukasawa 1-280, Higashi Koikeku, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd. (72) Shoichi Akamatsu 1-280, Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Laboratory (72) Inventor Akira Tsukamoto 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Institute Ltd. (72) Inventor Yoshinobu Tarutani 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Co., Ltd. In-house (72) Inventor Kazumasa Takagi 1-280, Higashi-Kengokubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (56) Reference JP-A-3-228382 (JP, A) JP-A-1-276680 (JP, A) JP-A-63-313877 (JP, A)

Claims (6)

(57) [Claims] 1. A copper-containing oxide-based material formed on a substrate.
The semiconductor layer and the semiconductor layer are provided so as to face each other.
First formed using the non-superconducting state of the eroded material,
An insulating film is provided on the second electrode and at least the semiconductor layer.
Control for controlling the current flowing in the semiconductor layer
A superconducting element, comprising: an electrode. 2. The method according to claim 1, wherein
The first and second electrodes are made of a non-superconducting material.
Superconducting element. 3. The non-superscript according to claim 2
Conductive material is at least one of Au, Ag, Bi, Sb
A superconducting device characterized by containing quality. 4. The method according to claim 1, wherein
The first and second electrodes are made of a superconducting material.
Superconducting element. 5. The supercharger according to claim 4,
Conductive materials are PbBi, Pb, Sn, Zn, Ga, Nb, In, Al, V, Ta,
Characterized by containing at least one substance of W
Superconducting element. 6. The semiconductor device according to claim 1,
The body layer is R _{1 + x} Ba _2-x Cu ₃ O _y (R is a rare earth element except Pr)
Element, 0.3 <x <0.8, 6 <y <8), Pr _{1 + x} Ba _2-x Cu ₃ O _y (0 ≦ x ≦ 0.5, 6 <y <
8), Y _1-x Pr _x Ba ₂ Cu ₃ O _y (0.6 ≦ x ≦ 1, 6 <y <
8), Bi ₂ Sr ₂ Ca _1-x R _x Cu ₂ O _y (R is a rare earth element, 0.
6 ≦ x ≦ 1, 8 <y <8.5), and RBa ₂ Cu ₃ O _y (R is Y or
Or rare earth element, 6.0 <y <6.4).
A superconducting element to be considered.