JP2514788B2 - Vapor growth susceptor - Google Patents
Vapor growth susceptorInfo
- Publication number
- JP2514788B2 JP2514788B2 JP60052860A JP5286085A JP2514788B2 JP 2514788 B2 JP2514788 B2 JP 2514788B2 JP 60052860 A JP60052860 A JP 60052860A JP 5286085 A JP5286085 A JP 5286085A JP 2514788 B2 JP2514788 B2 JP 2514788B2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- peripheral portion
- work coil
- vapor phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は半導体基板或いは絶縁体基板（以下これらを
ウエハという）上に半導体材料を気相成長させる装置の
サセプタに関する。Description: TECHNICAL FIELD The present invention relates to a susceptor for an apparatus for vapor-depositing a semiconductor material on a semiconductor substrate or an insulating substrate (hereinafter referred to as a wafer).
従来の縦型気相成長装置の一例を第２図により述べ
る。ベースプレート11とこれに載置された石英ベルジャ
12により反応室13が形成されており、この反応室13内に
あってサセプタ支え14により支持されるサセプタ15の上
面には複数のウエハ16が載置されている。サセプタ15は
電動機17から歯車機構18を経て駆動軸19とサセプタ支え
14により回転駆動されるようになっており、その下面に
はワークコイル20が設けてある。また石英ベルジャ12の
外周にはこれを覆う金属ベルジャ21が配置されている。An example of a conventional vertical vapor deposition apparatus will be described with reference to FIG. Base plate 11 and quartz bell jar mounted on it
A reaction chamber 13 is formed by 12, and a plurality of wafers 16 are placed on the upper surface of the susceptor 15 supported by the susceptor support 14 in the reaction chamber 13. The susceptor 15 supports the drive shaft 19 and the susceptor from the electric motor 17 through the gear mechanism 18.
It is driven to rotate by 14, and a work coil 20 is provided on the lower surface thereof. Further, a metal bell jar 21 that covers the quartz bell jar 12 is arranged on the outer periphery of the quartz bell jar 12.
ウエハ16はワークコイル20に給電することによりサセ
プタ15が高周波誘導により赤熱されその熱を受けて所定
温度に加熱されると共に、ノズル22からキャリアガスに
混合された反応ガスを噴出させることによりその上面に
半導体の結晶を成長させている。このとき石英ベルジャ
12は加熱されるため金属ベルジャ21の頂部に孔23を設
け、この孔23から適当なガス例えば窒素ガス等を流入さ
せて石英ベルジャ12を冷却しその内面に反応ガスが付着
することを防止している。The wafer 16 is heated to a predetermined temperature by receiving heat from the susceptor 15 which is red-heated by high-frequency induction by supplying power to the work coil 20, and the reaction gas mixed with the carrier gas is ejected from the nozzle 22 to upper surface thereof. Are growing semiconductor crystals. Quartz bell jar at this time
Since 12 is heated, a hole 23 is provided at the top of the metal bell jar 21, and a suitable gas such as nitrogen gas is introduced from this hole 23 to cool the quartz bell jar 12 to prevent the reaction gas from adhering to its inner surface. ing.
なお25はベースペレート11にあけたガス流出用の複数
の孔である。Reference numeral 25 is a plurality of holes for gas outflow formed in the base plate 11.
ワークコイル20とサセプタ15とが平行に保たれた状態
で高周波電力を印加した場合、後述する理由からワーク
コイル20の外周円をサセプタ15の外径に等しいかそれ以
上としているため、第３図に示す如くサセプタ外周部の
電力密度は内周部に比較して大きい。ここでＹ軸はサセ
プタ15に誘導される電力密度、VR軸はサセプタ15の径方
向、Ｉ点はサセプタ内周面、０点はサセプタ外周面をそ
れぞれ示す。したがってサセプタ15を成長温度例えば11
50℃に保持するためには一般的に電力のバランスをとる
ために第２図に示す如く内周部はサセプタ中間部に比較
してワークコイル20を近づけて電力効果をあげるように
している。また外周部は周囲近くに排気孔25があり、ガ
ス流に強くさらされ温度が低下する傾向にあるため、や
はり、第２図に示す如く、中間部に比較してワークコイ
ル20をサセプタ15に近づけると共に、前記のようにワー
クコイル20の外周円をサセプタ15の外径に等しいかそれ
以上としての電力の効果をあげている。When high frequency power is applied in a state where the work coil 20 and the susceptor 15 are kept parallel to each other, the outer circumference circle of the work coil 20 is equal to or larger than the outer diameter of the susceptor 15 for the reason described later. As shown in (4), the power density of the outer peripheral portion of the susceptor is higher than that of the inner peripheral portion. Here, the Y axis indicates the power density induced in the susceptor 15, the VR axis indicates the radial direction of the susceptor 15, the point I indicates the inner peripheral surface of the susceptor, and the point 0 indicates the outer peripheral surface of the susceptor. Therefore, the growth temperature of the susceptor 15 is set to, for example, 11
In order to maintain the power at 50 ° C. in general, the work coil 20 is brought closer to the inner peripheral portion as compared with the intermediate portion of the susceptor as shown in FIG. Further, since the outer peripheral portion has the exhaust holes 25 near the periphery and tends to be strongly exposed to the gas flow and the temperature lowers, the work coil 20 is attached to the susceptor 15 as compared with the intermediate portion as shown in FIG. While bringing them closer to each other, the effect of electric power is improved by making the outer circumference circle of the work coil 20 equal to or larger than the outer diameter of the susceptor 15 as described above.
しかしながら、前記のようなサセプタ15に対するワー
クコイル20の位置の調整によるサセプタ15の均熱化は、
ワークコイル20に供給する高周波電力の大きさによって
変化する。そこで、サセプタ15が所定の気相成長温度ま
で加熱されて安定状態にあり、ワークコイル20への供給
電力が比較的低い状態で均熱化するように設定すると、
それより相当高い電力を供給する昇温時には均熱性が得
られず、電力密度が大きくなる外周部の方がより強く発
熱する。したがって、昇温過程においては、外周部は赤
熱されているにもかかわらず内周部はそれ程昇温せずウ
エハの温度が部分的に不均一になって熱応力が発生し結
晶欠陥であるスリップが発生する。またサセプタ15の全
体が厚いため、その大径化にともない気相成長終了後に
ウエハ16を取り出すための冷却に長時間を必要とし、単
位時間当りの処理枚数は少なく大形化の利点が十分に発
揮できなかった。However, soaking of the susceptor 15 by adjusting the position of the work coil 20 with respect to the susceptor 15 as described above is
It changes depending on the magnitude of the high frequency power supplied to the work coil 20. Therefore, if the susceptor 15 is heated to a predetermined vapor phase growth temperature and is in a stable state, and the power supply to the work coil 20 is set to be soaked in a relatively low state,
When the temperature is increased by supplying a considerably higher electric power than that, soaking property is not obtained, and the outer peripheral portion where the electric power density is increased generates heat more strongly. Therefore, in the temperature rising process, even though the outer peripheral portion is red-heated, the inner peripheral portion does not increase in temperature so much, the temperature of the wafer becomes partially non-uniform, and thermal stress occurs, causing a slip that is a crystal defect. Occurs. Since the susceptor 15 is thick as a whole, it takes a long time to cool the wafer 16 after the vapor phase growth is completed due to the increase in diameter, and the number of wafers to be processed per unit time is small and the advantage of increasing the size is sufficient. I couldn't show it.
本発明はこのような欠点を除去したものでその目的
は、昇温過程においても各部の均熱性をとることにより
製品の品質を高めると共に気相成長後の冷却時間を短縮
して生産性を高くした気相成長用サセプタを提供するこ
とにある。The present invention eliminates such drawbacks, and its purpose is to improve the quality of the product by taking uniform heat distribution of each part even in the temperature rising process and shorten the cooling time after vapor phase growth to improve the productivity. The present invention is to provide a susceptor for vapor phase growth.
上記目的を達成するための本発明は、下面に沿って設
けたワークコイルにより高周波誘導加熱されると共に、
上面にウエハを載置し、ウエハ表面に沿って流れる反応
ガスによりウエハ表面に気相成長させるための気相成長
用サセプタにおいて、該サセプタの上面を平にし、下面
は、前記ワークコイルによる加熱時のサセプタ半径方向
温度分布を均一にすべく、外周部から内周部に向かって
サセプタの厚さを漸減させるように形成したことを特徴
としている。The present invention for achieving the above object is high-frequency induction heating by a work coil provided along the lower surface,
In a vapor phase growth susceptor for placing a wafer on the upper surface and performing vapor phase growth on the wafer surface by a reaction gas flowing along the wafer surface, the upper surface of the susceptor is flat and the lower surface is when heated by the work coil. In order to make the temperature distribution in the radial direction of the susceptor uniform, the thickness of the susceptor is gradually reduced from the outer peripheral portion toward the inner peripheral portion.
本発明の気相成長装置は従来例である第２図において
サセプタ15以外は同一である。以下本発明の一実施例を
示した第１図について説明する。The vapor phase growth apparatus of the present invention is the same as the conventional example in FIG. 2 except for the susceptor 15. Hereinafter, FIG. 1 showing an embodiment of the present invention will be described.
サセプタ31は外周部Ａが従来通りの厚さであり、上面
は平であるが、下面は内周部に向かってその厚さを漸減
する形状にしてある。このようにすることによりワーク
コイル20の電力密度の大きい外周部Ａは厚く電力密度の
小さい内周部Ｂは薄いため供給電力が高い昇温時にもほ
ぼ均一に加熱される。The outer peripheral portion A of the susceptor 31 has a conventional thickness and the upper surface is flat, but the lower surface has a shape in which the thickness gradually decreases toward the inner peripheral portion. By doing so, the outer peripheral portion A of the work coil 20 having a high power density is thick and the inner peripheral portion B of the work coil 20 having a small power density is thin, so that the work coil 20 is heated substantially uniformly even when the temperature is high.
サセプタ31が所定温度に達すると、以後は該所定温度
に保持するのみであるため、供給電力が低下し加熱の強
弱の割合が少なくなり、相対的にサセプタ31の外周部Ａ
の加熱が弱くなるが、所定温度に達した後の保持のみで
あり、この外周部Ａは厚いので冷却されにくいためか、
その後の温度安定時における外周部Ａの温度低下はほと
んど現われない。なお、実際には、昇温時と所定温度の
安定時との両方を満足するようにワークコイル20の位置
が設定される。When the susceptor 31 reaches the predetermined temperature, it is only kept at the predetermined temperature thereafter, so that the power supply decreases and the heating intensity decreases, and the outer peripheral portion A of the susceptor 31 relatively decreases.
Heating is weak, but it is only held after reaching a predetermined temperature, and because this outer peripheral portion A is thick, it is difficult to cool,
When the temperature is stabilized thereafter, the temperature of the outer peripheral portion A hardly decreases. Actually, the position of the work coil 20 is set so as to satisfy both the temperature rise and the predetermined temperature stabilization.
気相成長後サセプタ31をキャリアガスにより冷却する
とき、外周部Ａは排気孔25があるため速く一方冷却速度
の遅かった内周部Ｂは薄いため冷却温度は均一にしかも
速くなり結局全体的な冷却速度は速くなる。When the susceptor 31 is cooled by the carrier gas after the vapor phase growth, the outer peripheral portion A is fast because of the exhaust holes 25, while the inner peripheral portion B where the cooling rate is slow is thin, so that the cooling temperature is uniform and fast, and eventually the overall cooling temperature is high. The cooling rate becomes faster.
本発明の気相成長用サセプタは以上説明したように、
サセプタの厚さに変化をもたせる即ち外周部を厚く内周
部を薄くするという極めて簡単な構成でありながら、サ
セプタ昇降温時各部は均一に加熱冷却されるため熱応力
の差はなくなり、従って結晶欠陥であるスリップの発生
を押え高品質の気相成長が可能になった。さらに気相終
了後のサセプタ冷却も速くなり生産性が上昇する利点を
有し、サセプタの上面は従来と同様に平であるため、ウ
エハと反応ガスとの関係は変化せず、上記サセプタの厚
さ変化が気相成長に及ぼす悪影響は生じない。As described above, the vapor phase growth susceptor of the present invention is
Although the susceptor has a very simple structure in which the thickness of the susceptor is changed, that is, the outer peripheral portion is thickened and the inner peripheral portion is thinned, the difference in thermal stress is eliminated because each portion is uniformly heated and cooled when the susceptor is heated and cooled. High-quality vapor phase growth became possible by suppressing the occurrence of defects such as slips. Furthermore, it has the advantage that the susceptor is cooled faster after completion of the vapor phase and productivity is increased.Since the upper surface of the susceptor is flat as before, the relationship between the wafer and the reaction gas does not change, and the thickness of the above susceptor does not change. Change does not have an adverse effect on vapor phase growth.
第１図は本発明の一実施例の断面図、第２図は従来の気
相成長装置の断面図、第３図は従来の一定厚さのサセプ
タに対しワークコイルを一定間隔で位置させた場合のサ
セプタの半径方向の温度分布を示す図である。 11…ベースプレート、12…石英ベルジャ、21…金属ベル
ジャ、22…ノズル、31…サセプタ。FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a cross-sectional view of a conventional vapor phase growth apparatus, and FIG. 3 is a conventional susceptor having a constant thickness, in which work coils are positioned at regular intervals. It is a figure which shows the temperature distribution of the radial direction of a susceptor in the case. 11 ... Base plate, 12 ... Quartz bell jar, 21 ... Metal bell jar, 22 ... Nozzle, 31 ... Susceptor.
───────────────────────────────────────────────────── フロントページの続き 合議体 審判長 遠藤 政明 審判官 関根 恒也 審判官 真々田 忠博 (56)参考文献 特開 昭60−170233（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page Jury President Masaaki Endo Judge Judge Tsuneya Sekine Judge Tadahiro Sanada (56) References JP-A-60-170233 (JP, A)
Claims (1)
周波誘導加熱されると共に、上面にウエハを載置し、ウ
エハ表面に沿って流れる反応ガスによりウエハ表面に気
相成長させるための気相成長用サセプタにおいて、該サ
セプタの上面を平にし、下面は、前記ワークコイルによ
る加熱時のサセプタ半径方向温度分布を均一にすべく、
外周部から内周部に向かってサセプタの厚さを漸減させ
るように形成したことを特徴とする気相成長用サセプ
タ。1. Vapor growth for performing high frequency induction heating by a work coil provided along a lower surface, placing a wafer on the upper surface, and performing vapor phase growth on the wafer surface by a reaction gas flowing along the wafer surface. In the susceptor for use, the upper surface of the susceptor is flat, and the lower surface of the susceptor has a uniform temperature distribution in the radial direction of the susceptor during heating by the work coil.
A susceptor for vapor phase growth, characterized in that the susceptor is formed so that the thickness of the susceptor gradually decreases from the outer peripheral portion toward the inner peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60052860A JP2514788B2 (en) | 1985-03-15 | 1985-03-15 | Vapor growth susceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60052860A JP2514788B2 (en) | 1985-03-15 | 1985-03-15 | Vapor growth susceptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61210621A JPS61210621A (en) | 1986-09-18 |
| JP2514788B2 true JP2514788B2 (en) | 1996-07-10 |
Family
ID=12926616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60052860A Expired - Lifetime JP2514788B2 (en) | 1985-03-15 | 1985-03-15 | Vapor growth susceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2514788B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130024829A (en) | 2011-08-30 | 2013-03-08 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus and film forming apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170233A (en) * | 1984-02-15 | 1985-09-03 | Toshiba Corp | Manufacturing device for semiconductor |
-
1985
- 1985-03-15 JP JP60052860A patent/JP2514788B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130024829A (en) | 2011-08-30 | 2013-03-08 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus and film forming apparatus |
| JP2013051249A (en) * | 2011-08-30 | 2013-03-14 | Tokyo Electron Ltd | Substrate processing apparatus and deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61210621A (en) | 1986-09-18 |
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| EXPY | Cancellation because of completion of term |