JP2514677Y2 - 薄膜気相成長装置 - Google Patents
薄膜気相成長装置Info
- Publication number
- JP2514677Y2 JP2514677Y2 JP1990067642U JP6764290U JP2514677Y2 JP 2514677 Y2 JP2514677 Y2 JP 2514677Y2 JP 1990067642 U JP1990067642 U JP 1990067642U JP 6764290 U JP6764290 U JP 6764290U JP 2514677 Y2 JP2514677 Y2 JP 2514677Y2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- heater
- wafer
- thin film
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 12
- 238000007740 vapor deposition Methods 0.000 title claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000000498 cooling water Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990067642U JP2514677Y2 (ja) | 1990-06-26 | 1990-06-26 | 薄膜気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990067642U JP2514677Y2 (ja) | 1990-06-26 | 1990-06-26 | 薄膜気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0426528U JPH0426528U (enrdf_load_stackoverflow) | 1992-03-03 |
| JP2514677Y2 true JP2514677Y2 (ja) | 1996-10-23 |
Family
ID=31601391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990067642U Expired - Fee Related JP2514677Y2 (ja) | 1990-06-26 | 1990-06-26 | 薄膜気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2514677Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6513451B2 (ja) * | 2015-03-30 | 2019-05-15 | 大陽日酸株式会社 | 高温加熱装置、気相成長装置、及び気相成長方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62118519A (ja) * | 1985-11-19 | 1987-05-29 | Mitsubishi Electric Corp | 半導体基板加熱装置 |
| JPS63196033A (ja) * | 1987-02-09 | 1988-08-15 | Fujitsu Ltd | 気相成長装置 |
| JPS63278322A (ja) * | 1987-05-11 | 1988-11-16 | Fujitsu Ltd | 気相成長装置 |
-
1990
- 1990-06-26 JP JP1990067642U patent/JP2514677Y2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0426528U (enrdf_load_stackoverflow) | 1992-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3796182A (en) | Susceptor structure for chemical vapor deposition reactor | |
| US6554905B1 (en) | Rotating semiconductor processing apparatus | |
| US6325858B1 (en) | Long life high temperature process chamber | |
| JPH03108323A (ja) | ヒータ組立体及び基板の加熱方法 | |
| JPH05243166A (ja) | 半導体基板の気相成長装置 | |
| KR20170105563A (ko) | 기판 후면 변색 제어를 위한 지지 조립체 | |
| JPH03500064A (ja) | 反応室ならびに化学蒸着法の改良 | |
| SG185214A1 (en) | Method and apparatus for depositing a material layer originating from process gas on a substrate wafer | |
| KR100375396B1 (ko) | 준고온벽을갖춘반응챔버 | |
| JP2514677Y2 (ja) | 薄膜気相成長装置 | |
| JPS61281009A (ja) | 多結晶シリコンの製造装置 | |
| JP2546414B2 (ja) | 気相成長装置 | |
| JPH09245957A (ja) | 高周波誘導加熱炉 | |
| JPH0864544A (ja) | 気相成長方法 | |
| KR102380523B1 (ko) | 폴리실리콘 제조용 반사 코팅막이 형성된 cvd 반응기 및 그 제조 방법 | |
| JPS60189927A (ja) | 気相反応容器 | |
| JPH0338029A (ja) | 気相成長装置 | |
| JPH0735383Y2 (ja) | 薄膜気相成長装置 | |
| JP2000049098A (ja) | エピタキシャル成長炉 | |
| JPS622614A (ja) | 赤外線加熱装置 | |
| JPH0544825B2 (enrdf_load_stackoverflow) | ||
| JPH097955A (ja) | 半導体熱処理用の電気抵抗式ガラス状カーボン製ヒータ | |
| JPH0735382Y2 (ja) | 薄膜気相成長装置 | |
| JPS6358926A (ja) | 気相表面処理反応装置 | |
| JPH02238619A (ja) | 気相成長装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |