JP2513112B2 - LSI mounting structure - Google Patents

LSI mounting structure

Info

Publication number
JP2513112B2
JP2513112B2 JP5016041A JP1604193A JP2513112B2 JP 2513112 B2 JP2513112 B2 JP 2513112B2 JP 5016041 A JP5016041 A JP 5016041A JP 1604193 A JP1604193 A JP 1604193A JP 2513112 B2 JP2513112 B2 JP 2513112B2
Authority
JP
Japan
Prior art keywords
electronic circuit
circuit board
lsi
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP5016041A
Other languages
Japanese (ja)
Other versions
JPH06232203A (en
Inventor
正義 三好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5016041A priority Critical patent/JP2513112B2/en
Publication of JPH06232203A publication Critical patent/JPH06232203A/en
Application granted granted Critical
Publication of JP2513112B2 publication Critical patent/JP2513112B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、LSIの実装構造に関
し、特にフリップチップLSIの実装構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LSI mounting structure, and more particularly to a flip-chip LSI mounting structure.

【0002】[0002]

【従来の技術】従来、LSIの実装構造のひとつとし
て、フリップチップ実装構造がある。
2. Description of the Related Art Conventionally, a flip-chip mounting structure is one of the mounting structures of LSIs.

【0003】図5は、従来のフリップチップ実装構造の
断面図である。LSI1に設けられた電極3と対応する
電子回路基板2に設けられた電極4が半田バンプ5によ
って電気的接続がされている。また、同時にLSI1
は、半田バンプ5によって電子回路基板2に固定されて
いる。近年、LSIは高密度集積化してきている。これ
に伴い、入出力の為の電極3の数が増加し、電極3のピ
ッチは微細化しているのに対し、フリップチップLSI
は回路面全体に電極3を設けることで多端子化には有利
な実装構造である。
FIG. 5 is a sectional view of a conventional flip chip mounting structure. The electrodes 3 provided on the electronic circuit board 2 corresponding to the electrodes 3 provided on the LSI 1 are electrically connected by the solder bumps 5. At the same time, LSI1
Are fixed to the electronic circuit board 2 by solder bumps 5. In recent years, LSIs have been highly integrated. Along with this, the number of electrodes 3 for input / output has increased, and the pitch of the electrodes 3 has been miniaturized.
Is a mounting structure that is advantageous for increasing the number of terminals by providing the electrodes 3 on the entire circuit surface.

【0004】フリップチップ実装構造の製造方法として
は、LSI1に設けられた電極3に予め半田バンプを形
成しておくか、或いは電子回路基板2に設けられた電極
4に予め半田バンプを形成しておく。そして、LSI1
をフェイスダウンにより電子回路基板2上にのせた後に
ホットプレート或いはベルト炉等によりリフローして電
気的に接続を行ない、固定する。
As a method of manufacturing the flip-chip mounting structure, solder bumps are formed in advance on the electrodes 3 provided on the LSI 1 or solder bumps are formed on the electrodes 4 provided on the electronic circuit board 2 in advance. deep. And LSI1
Is placed face down on the electronic circuit board 2 and then reflowed by a hot plate or a belt furnace to electrically connect and fix.

【0005】図6は、冷却モジュール7を有するLSI
の実装構造の断面図である。LSI1の高密度集積化に
より発熱量が大きくなってきている。そのため冷却の必
要があり、特に発熱量の大きなLSIの場合は冷却モジ
ュールを設けることで有効な冷却が可能となる。この場
合、LSI1と冷却モジュール7間の熱抵抗を小さくす
るために、冷却モジュール7はLSI1を強い力で押し
つけることが必要になる。
FIG. 6 shows an LSI having a cooling module 7.
3 is a cross-sectional view of the mounting structure of FIG. The amount of heat generated is increasing due to high-density integration of the LSI 1. Therefore, cooling is required, and particularly in the case of an LSI that generates a large amount of heat, a cooling module is provided to enable effective cooling. In this case, in order to reduce the thermal resistance between the LSI 1 and the cooling module 7, the cooling module 7 needs to press the LSI 1 with a strong force.

【0006】図7は、チップキャリア基板8を有するフ
リップチップLSIの実装構造の断面図である。大型の
LSIの場合、LSI1の熱膨張率と電子回路基板2の
熱膨張率のちがいにより接続信頼性が低下するのを防止
するためにチップキャリア基板8をもちいることがあ
る。
FIG. 7 is a sectional view of a flip-chip LSI mounting structure having a chip carrier substrate 8. In the case of a large LSI, the chip carrier substrate 8 may be used in order to prevent the connection reliability from decreasing due to the difference in the coefficient of thermal expansion of the LSI 1 and the coefficient of thermal expansion of the electronic circuit board 2.

【0007】図7においてLSI1とチップキャリア基
板8はチップキャリア基板8に設けられた電極9及び半
田バンプ5,電極3により電気的に接続され、チップキ
ャリア基板8と電子回路基板2は、電極4,9及び半田
バンプ5により電気的に接続されている。
In FIG. 7, the LSI 1 and the chip carrier substrate 8 are electrically connected by the electrodes 9 and the solder bumps 5 and the electrodes 3 provided on the chip carrier substrate 8, and the chip carrier substrate 8 and the electronic circuit substrate 2 are connected by the electrodes 4 , 9 and the solder bumps 5 are electrically connected.

【0008】[0008]

【発明が解決しようとする課題】従来のフリップチップ
LSIの実装構造では、電極のピッチが微細化するにつ
れ、リフロー時において、隣合う半田バンプどうしが接
触し、ショートする事がある。
In the conventional flip-chip LSI mounting structure, as the electrode pitch becomes finer, adjacent solder bumps may come into contact with each other during reflow, resulting in a short circuit.

【0009】冷却モジュールを有するLSIの実装構造
ではLSIが強い力で押さえつけられているため、半田
バンプが変形する。この変形のためにも隣合う半田バン
プどうしが接触し、ショートする事がある。
In the mounting structure of the LSI having the cooling module, the LSI is pressed down with a strong force, so that the solder bump is deformed. Due to this deformation, adjacent solder bumps may come into contact with each other to cause a short circuit.

【0010】また、LSIは、半田バンプのみで支えら
れているため、リフロー時にLSIが傾いたり、複数の
LSIを実装したときにLSIそれぞれの高さが不揃い
になることがあり、これをなくすためには、LSIの傾
き、高さを正確に制御して、マウント、リフローする必
要がある。
Further, since the LSI is supported only by solder bumps, the LSI may tilt during reflow, or the heights of the LSIs may become uneven when a plurality of LSIs are mounted. Therefore, it is necessary to accurately control the inclination and height of the LSI to mount and reflow the LSI.

【0011】また、チップキャリア基板を有するフリッ
プチップ実装構造の場合でも、LSIとチップキャリア
基板の間の接続、及び、チップキャリア基板と電子回路
基板の間の接続に半田バンプ接続を用いた場合は、やは
り上記と同様の問題が発生する。
Even in the flip-chip mounting structure having a chip carrier substrate, when solder bump connection is used for the connection between the LSI and the chip carrier substrate and the connection between the chip carrier substrate and the electronic circuit substrate. However, the same problem as described above occurs.

【0012】本発明は、上記課題を解決することでLS
Iの高密度集積化に伴う信頼性の低下を防止することを
目的とする。
The present invention solves the above problems by achieving the LS.
The purpose is to prevent a decrease in reliability due to high-density integration of I.

【0013】[0013]

【課題を解決するための手段】本発明は、第1の電子回
路基板に列設された複数の電極それぞれを半田バンプを
介して第2の電子回路基板に列設された複数の電極に接
続した電子回路基板の実装構造において、前記第1の電
子回路基板と前記第2の電子回路基板の間に、隣合う半
田バンプを区切り且つ一方の面が前記第1の電子回路基
板に隙間なく接触し他方の面が前記第2の電子回路基板
に隙間なく接触するが半田バンプとの間に空隙を有する
絶縁性の材料でできた網状スペーサを設けることを特徴
とし、第1の回路基板をLSIにすることもできる。
According to the present invention, a plurality of electrodes arranged on a first electronic circuit board are connected to a plurality of electrodes arranged on a second electronic circuit board via solder bumps. In the mounting structure of the electronic circuit board described above, adjacent solder bumps are separated between the first electronic circuit board and the second electronic circuit board, and one surface of the electronic circuit board is in contact with the first electronic circuit board without a gap. The other surface of the first electronic circuit board is in contact with the second electronic circuit board without a gap, but has a space between the second surface and the solder bump. A mesh spacer made of an insulating material is provided. The circuit board may be an LSI.

【0014】本発明は、第1の電子回路基板に列設され
た複数の電極それぞれを半田バンプを介して第2の電子
回路基板に列設された複数の電極に接続する電子回路基
板の実装方法において、前記第1の電子回路基板上に絶
縁性の材料からなる網状スペーサを網の目それぞれの位
置が前記第1の電子回路基板に設けられた電極の位置に
合うように載せ、半田ボールを1つずつ前記網状スペー
サの各網の目内に入れて、前記第1の電子回路基板上の
各電極の上に載せてから前記第2の電子回路基板をその
電極が対応する前記第1の電子回路基板の電極に対向す
るように前記網状スペーサ上に載せ、前記半田ボールを
加熱溶融して前記第1の電子回路基板の電極と前記第2
の電子回路基板の電極を接続することを特徴とし、また
は前記第1の電子回路基板上に弾力性および絶縁性を有
する材料からなる網状スペーサを網の目それぞれの位置
が前記第1の電子回路基板に設けられた電極の位置に合
うように載せ、さらに前記第2の電子回路基板をその電
極が対応する前記第1の電子回路基板の電極に対向する
ように前記網状スペーサに載せてから前記第1の電子回
路基板の電極と前記第2の電子回路基板の電極との間に
予め設けられた半田を加熱溶融した状態で前記第2の電
子回路基板を前記第1の電子回路基板に向けて押し付け
る力を加えた後にこの力をゆるめてから前記半田を冷却
凝固させることを特徴とする。
The present invention is arranged in a row on a first electronic circuit board.
A plurality of second electrodes through solder bumps
Electronic circuit board connected to a plurality of electrodes lined up on a circuit board
In the board mounting method, the board is mounted on the first electronic circuit board.
Attach a mesh spacer made of edible material to each position of the mesh.
At the position of the electrode provided on the first electronic circuit board.
Place the solder balls so that they fit together, and solder balls one by one.
On each first electronic circuit board
Place the second electronic circuit board on each electrode
The electrode faces the corresponding electrode of the first electronic circuit board.
And place it on the reticulated spacer so that the solder balls
It is heated and melted, and the electrodes of the first electronic circuit board and the second electronic circuit board
Characterized by connecting the electrodes of the electronic circuit board of
Has elasticity and insulation on the first electronic circuit board.
The mesh spacer made of the material
Is aligned with the position of the electrode provided on the first electronic circuit board.
And place the second electronic circuit board on the
The pole faces the corresponding electrode of the first electronic circuit board.
The first electronic circuit after being mounted on the mesh spacer
Between the electrode of the circuit board and the electrode of the second electronic circuit board
In the state where the previously provided solder is heated and melted, the second electric
Push the slave circuit board toward the first electronic circuit board
After applying this force, loosen this force and then cool the solder.
It is characterized by solidifying .

【0015】[0015]

【実施例】次に本発明について図面を参照して説明す
る。
The present invention will be described below with reference to the drawings.

【0016】図1は(A)及び(B)はそれぞれ本発明
の一実施例の分解斜視図及びa−a断面図である。図1
において、LSI1と電子回路基板2の間には、本発明
の特徴である、網状スペーサ6が設けられている。ま
た、LSI1と電子回路基板2の電気的接続は、LSI
1に設けられている電極3と電子回路基板2に設けられ
ている電極4を半田バンプ5を介することで行なわれて
いる。この半田バンプ5はそれぞれひとつずつが、網状
スペーサ6により区切られる形になり、隣合う半田バン
プ5どうしが接触する危険がなくなりショートが防止さ
れる。網状スペーサ6の材料としては、絶縁材(例え
ば、アルミナ,チッ化アルミ,ムライト,ガラスセラミ
ック等のセラミック材料)を用いる。
FIGS. 1A and 1B are an exploded perspective view and an aa sectional view of an embodiment of the present invention, respectively. FIG.
In the above, between the LSI 1 and the electronic circuit board 2, a mesh spacer 6, which is a feature of the present invention, is provided. Further, the electrical connection between the LSI 1 and the electronic circuit board 2 is the LSI
This is performed by interposing the electrodes 3 provided on the first electrode 1 and the electrodes 4 provided on the electronic circuit board 2 with the solder bumps 5 interposed therebetween. The solder bumps 5 are separated one by one by the mesh spacers 6, and there is no danger of the adjacent solder bumps 5 coming into contact with each other, and a short circuit is prevented. As the material of the mesh spacer 6, an insulating material (for example, a ceramic material such as alumina, aluminum nitride, mullite, glass ceramic) is used.

【0017】次に、本発明のフリップチップ実装構造の
製造方法を説明する。従来のフリップチップ実装構造の
製造方法と同様に、LSI1の電極3に予め半田バンプ
を形成しておくか、或いは電子回路基板2に設けられた
電極4に予め半田バンプを形成しておく。この場合の半
田バンプの高さは網状スペーサ6の高さより高くする必
要がある。そして、電子回路基板2の上に網状スペーサ
6を、電子回路基板2の電極4と網の目を位置合わせし
て載せる。その上にLSI1を同様に位置合わせしてフ
ェイスダウンにより載せた後にホットプレート或いは、
ベルト炉等によりリフローして電気的接続を行なう。こ
のリフロー時には、LSI1に対して上から力をかける
ことで電子回路基板2と網状スペーサ6、LSI1間の
隙間が無くなり、網状スペーサ6の介在により、電子回
路基板2からLSI1までの高さが揃うことになり、ま
た、LSI1は傾きなく水平に固定されることになる。
Next, a method of manufacturing the flip chip mounting structure of the present invention will be described. Similar to the conventional method of manufacturing the flip chip mounting structure, the solder bumps are formed in advance on the electrodes 3 of the LSI 1 or the electrodes 4 provided on the electronic circuit board 2 are formed in advance. In this case, the height of the solder bump needs to be higher than the height of the mesh spacer 6. Then, the mesh spacer 6 is placed on the electronic circuit board 2 with the meshes of the electrodes 4 of the electronic circuit board 2 aligned. Similarly, align the LSI 1 on top of it and place it face down, then hot plate or
Reflow using a belt furnace etc. to make electrical connection. At the time of this reflow, by applying a force to the LSI 1 from above, the gap between the electronic circuit board 2 and the net-like spacers 6 and the LSI 1 is eliminated, and the height of the electronic circuit board 2 to the LSI 1 is made uniform by the presence of the net-like spacers 6. In addition, the LSI 1 is fixed horizontally without tilting.

【0018】また、網状スペーサ6を用いることでフリ
ップチップ実装構造の電極に半田バンプを形成する工程
がない製造方法も可能になる。まず、電子回路基板2の
上に網状スペーサ6を、電子回路基板2の電極4と網の
目を位置合わせして載せる。網状スペーサ6の網の目を
利用して各電極4の上に半田ボールを並べる。この上
に、LSI1を位置合わせしてフェイスダウンによりの
せてからリフローする。この製造方法では、電極2また
は電極4に予め半田バンプを形成しておく工程が省略で
きる。
Further, the use of the mesh spacer 6 enables a manufacturing method which does not require a step of forming solder bumps on the electrodes of the flip chip mounting structure. First, the mesh spacer 6 is placed on the electronic circuit board 2 with the mesh of the electrodes 4 of the electronic circuit board 2 aligned. Solder balls are arranged on each electrode 4 by utilizing the mesh of the mesh spacer 6. Then, the LSI 1 is aligned and placed face down, and then reflowed. In this manufacturing method, the step of previously forming the solder bump on the electrode 2 or the electrode 4 can be omitted.

【0019】図2は、図1の実施例に冷却モジュール7
を加えたものの断面図である。「従来の技術」のところ
で既に説明したように、冷却モジュール7は熱抵抗を小
さくするためにLSI1を強い力で押さえつけている
が、従来、半田バンプ5だけにかかっていた力が網状ス
ペーサ6により、この力は分散されることになる。さら
に、網状スペーサ6に半田よりも硬い材料(例えば、前
記アルミナ等)を用いることで半田バンプ5のつぶれが
防止できる。また、たとえ半田バンプ5がつぶれて変形
した場合でも、半田バンプ5はそれぞれひとつずつが、
網状スペーサ6により区切られているために、隣合う半
田バンプ5どうしが接触してショートすることがなくな
る。
FIG. 2 shows a cooling module 7 according to the embodiment of FIG.
It is sectional drawing of what added. As already described in the “Prior Art”, the cooling module 7 presses the LSI 1 with a strong force in order to reduce the thermal resistance. However, the force applied only to the solder bumps 5 by the mesh spacer 6 in the past. , This force will be dispersed. Further, by using a material harder than solder (for example, the alumina or the like) for the mesh spacer 6, it is possible to prevent the solder bump 5 from being crushed. Moreover, even if the solder bumps 5 are crushed and deformed,
Since they are separated by the mesh spacers 6, adjacent solder bumps 5 do not come into contact with each other to cause a short circuit.

【0020】図3(A)および(B)はそれぞれ本発明
の他の実施例分解斜視図およびb−b断面図である。
3 (A) and 3 (B) are an exploded perspective view and a bb sectional view, respectively, of another embodiment of the present invention.

【0021】本実施例でも図1に示した実施例と同様に
LSI1と電子回路基板2との間に網状スペーサ10を
介在させる。ただし、本実施例の網状スペーサ10は、
図1に示される網状スペーサ6と異り、各部分の断面が
円形(網状スペーサ6では矩形)で、材料として耐熱性
でかつ弾力性をもった材料(例えばシリコンゴム)を用
いている。本実施例では、以下に延べる製造方法により
半田バンプ5を鼓形状にすることが可能となる。リフロ
ーまでの工程は図1に示す実施例と同じ製造方法で行う
が、本実施例の場合は、リフローして半田が完全に溶融
した状態でLSI1に対して上からかけている力をゆる
めてから、半田を凝固させる。網状スペーサ10の弾力
性によりLSI1は、持ち上げられるため、完全に溶融
された半田は引きのばされることになり、半田バンプ5
は鼓形状に形成される。このため半田バンプ5にかかる
応力が緩和され、半田接続部の寿命が長くなる。
In this embodiment as well, as in the embodiment shown in FIG. 1, a mesh spacer 10 is interposed between the LSI 1 and the electronic circuit board 2. However, the mesh spacer 10 of this embodiment is
Unlike the mesh spacer 6 shown in FIG. 1, the cross section of each portion is circular (the mesh spacer 6 is rectangular), and a heat-resistant and elastic material (for example, silicon rubber) is used as the material. In the present embodiment, the solder bump 5 can be formed into a drum shape by the manufacturing method described below. The steps up to the reflow are performed by the same manufacturing method as that of the embodiment shown in FIG. 1. However, in the case of this embodiment, the force applied from above to the LSI 1 is relaxed by reflowing and the solder is completely melted. To solidify the solder. Since the LSI 1 is lifted by the elasticity of the mesh spacer 10, the completely melted solder is pulled out, and the solder bump 5
Is shaped like a drum. Therefore, the stress applied to the solder bumps 5 is relieved, and the life of the solder connection portion is extended.

【0022】図4は、チップキャリア基板を有するLS
Iの実装構造に本発明の特徴である網状スペーサ6を設
けた場合の実施例の説明図で、図4(A)は冷却モジュ
ールがない場合の断面図、図4(B)は冷却モジュール
7を有する場合の断面図である。LSI1と電子回路基
板2の間にチープキャリア基板8を有していて、このチ
ップキャリア基板8とLSI1の間、チップキャリア基
板8と電子回路基板2の間に、それぞれ網状スペーサ6
が設けてある。このLSIの実装構造の場合でも、LS
I1とチップキャリア基板8の間の電気的接続及び、チ
ップキャリア基板8と電子回路基板2の間の電気的接続
には、やはり半田バンプ5による接続が用いられてい
る。この半田バンプ5はそれぞれひとつずつが、網状ス
ペーサ6により区切られる形になっている。
FIG. 4 shows an LS having a chip carrier substrate.
FIG. 4A is an explanatory view of an embodiment in which a mesh spacer 6 which is a feature of the present invention is provided in the mounting structure of I, FIG. 4A is a cross-sectional view without a cooling module, and FIG. 4B is a cooling module 7. It is sectional drawing when it has. A cheap carrier board 8 is provided between the LSI 1 and the electronic circuit board 2, and the net-like spacers 6 are provided between the chip carrier board 8 and the LSI 1 and between the chip carrier board 8 and the electronic circuit board 2, respectively.
Is provided. Even in the case of this LSI mounting structure, LS
The solder bumps 5 are also used for the electrical connection between I1 and the chip carrier substrate 8 and the electrical connection between the chip carrier substrate 8 and the electronic circuit substrate 2. Each of the solder bumps 5 is separated by a mesh spacer 6.

【0023】[0023]

【発明の効果】以上、説明したように、本発明によるL
SIの実装構造は、隣合う半田バンプを区切る絶縁性の
材料でできた網状スペーサを有していることで、半田バ
ンプはそれぞれひとつずつ区切られるため、隣合う半田
バンプどうしが接触することによりおきるショートを防
止できる。
As described above, the L according to the present invention is
The SI mounting structure has a mesh spacer made of an insulating material that separates adjacent solder bumps. Since each solder bump is separated one by one, it occurs when adjacent solder bumps contact each other. Can prevent short circuit.

【0024】また、LSIは、網状スペーサで支えられ
るため、LSIの傾きがなくなり、また複数のLSIが
一定の高さに揃うことになる。
Further, since the LSI is supported by the mesh spacer, the inclination of the LSI is eliminated, and a plurality of LSIs are aligned at a constant height.

【0025】冷却モジュールを有する実装構造において
は、半田バンプにかかる力を分散し、半田バンプがつぶ
れて変形することを防止する。また、たとえ変形した場
合でも、半田バンプはひとつずつ区切られているために
隣合う半田バンプどうしが接触してショートすることが
なくなる。このため、冷却モジュールをより強い力でL
SIに押しつけることも可能となり、熱抵抗が小さくな
ることから冷却効率をあげられる。
In the mounting structure having the cooling module, the force applied to the solder bumps is dispersed to prevent the solder bumps from being crushed and deformed. Moreover, even if the solder bumps are deformed, the solder bumps are separated one by one, so that adjacent solder bumps do not come into contact with each other to cause a short circuit. Therefore, the cooling module can
It is also possible to press against SI and the thermal resistance is reduced, so that the cooling efficiency can be improved.

【0026】弾力性を有する網状スペーサを用いて、L
SIの電極と電子回路基板間の半田を鼓形状にすれば、
LSIと電子回路基板の熱膨張差により半田バンプにか
かる応力を緩和する作用があるため半田バンプ接続部の
寿命が長くなる。
By using a mesh spacer having elasticity, L
If the solder between the SI electrode and the electronic circuit board is shaped like a drum,
The difference in thermal expansion between the LSI and the electronic circuit board has the effect of alleviating the stress applied to the solder bumps, which prolongs the life of the solder bump connection portion.

【0027】チップキャリア基板を有する実装構造にお
いても、従来のチップキャリア基板による効果を犠牲に
することなく、上記と同様の効果が得られる。
Even in a mounting structure having a chip carrier substrate, the same effects as described above can be obtained without sacrificing the effects of the conventional chip carrier substrate.

【0028】以上のように、本発明は網状スペーサを用
いることで、信頼性の高いフリップチップLSIの実装
構造を実現できる。特に高密度集積化されたLSIに対
して効果が大きい。
As described above, the present invention can realize a highly reliable flip-chip LSI mounting structure by using the mesh spacer. The effect is particularly great for high-density integrated LSIs.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)および(B)はそれぞれ本発明の第一実
施例の分解斜視図およびa−a断面図である。
1A and 1B are an exploded perspective view and an aa sectional view of a first embodiment of the present invention, respectively.

【図2】図1の実施例に冷却モジュールを加えた実装構
造の断面図である。
FIG. 2 is a sectional view of a mounting structure in which a cooling module is added to the embodiment of FIG.

【図3】(A)および(B)はそれぞれ本発明の他の実
施例の分解斜視図およびb−b断面図である。
3A and 3B are an exploded perspective view and a bb sectional view, respectively, of another embodiment of the present invention.

【図4】本発明のさらに他の実施例でチップキャリア基
板を有する実装構造の断面図であり、(A)および
(B)はそれぞれ冷却モジュールがない実装構造および
冷却モジュールを有する実装構造の図である。
4A and 4B are cross-sectional views of a mounting structure having a chip carrier substrate according to still another embodiment of the present invention, and FIGS. 4A and 4B are a mounting structure without a cooling module and a mounting structure having a cooling module, respectively. Is.

【図5】従来のLSIの実装構造の断面図である。FIG. 5 is a cross-sectional view of a conventional LSI mounting structure.

【図6】図5の実装構造に冷却モジュールを加えたもの
の断面図である。
6 is a cross-sectional view of the mounting structure of FIG. 5 with a cooling module added.

【図7】チップキャリア基板を有する従来のLSIの実
装構造の断面図である。
FIG. 7 is a cross-sectional view of a conventional LSI mounting structure having a chip carrier substrate.

【符号の説明】[Explanation of symbols]

1 LSI 2 電子回路基板 3 電極 4 電極 5 半田バンプ 6 網状スペーサ 7 冷却モジュール 8 チップキャリア基板 9 電極 10 網状スペーサ 1 LSI 2 Electronic Circuit Board 3 Electrode 4 Electrode 5 Solder Bump 6 Net Spacer 7 Cooling Module 8 Chip Carrier Substrate 9 Electrode 10 Net Spacer

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 LSIをフェイスダウンで電子回路基板
に実装するフリップチップLSIの実装構造において、 前記LSIと前記電子回路基板の間に、隣合う半田バン
プを区切り且つ一方の面が前記LSIと隙間なく接触し
他方の面が前記電子回路基板に隙間なく接触するが半田
バンプとの間に空隙を有する絶縁性の材料でできた網状
スペーサを設けることを特徴とするLISの実装構造。
1. In a flip-chip LSI mounting structure for mounting an LSI on an electronic circuit board face down, adjacent solder bumps are separated between the LSI and the electronic circuit board, and one surface is a gap with the LSI. Without contact and the other surface comes into contact with the electronic circuit board without a gap, but solder
A mounting structure of LIS, characterized in that a mesh spacer made of an insulating material having a space between the bump and the bump is provided.
【請求項2】 第1の電子回路基板に列設された複数の
電極それぞれを半田バンプを介して第2の電子回路基板
に列設された複数の電極に接続した電子回路基板の実装
構造において、前記第1の電子回路基板と前記第2の電
子回路基板の間に、隣合う半田バンプを区切り且つ一方
の面が前記第1の電子回路基板に隙間なく接触した他方
の面が前記第2の電子回路基板に隙間なく接触するが半
田バンプとの間に空隙を有する絶縁性の材料でできた網
状スペーサを設けることを特徴とする電子回路基板の実
装構造。
2. A mounting structure of an electronic circuit board, wherein each of a plurality of electrodes arranged in a row on a first electronic circuit board is connected to a plurality of electrodes arranged on a second electronic circuit board via solder bumps. Between the first electronic circuit board and the second electronic circuit board, adjacent solder bumps are separated from each other, and one surface is in contact with the first electronic circuit board without a gap and the other surface is the second surface. contact without gaps to the electronic circuit board is half
A mounting structure for an electronic circuit board, characterized in that a net-like spacer made of an insulating material having a space between the pad and the bump is provided.
【請求項3】 LSIに接する冷却モジュールを有する
請求項1記載のLSIの実装構造。
3. A mounting structure of an LSI according to claim 1, further comprising a cooling module contacting the LSI.
【請求項4】 第1の電子回路基板に列設された複数の
電極それぞれを半田バンプを介して第2の電子回路基板
に列設された複数の電極に接続する電子回路基板の実装
方法において、前記第1の電子回路基板上に絶縁性の材
料からなる網状スペーサを網の目それぞれの位置が前記
第1の電子回路基板に設けられた電極の位置に合うよう
に載せ、半田ボールを1つずつ前記網状スペーサの各網
の目内に入れて、前記第1の電子回路基板上の各電極の
上に載せてから前記第2の電子回路基板をその電極が対
応する前記第1の電子回路基板の電極に対向するように
前記網状スペーサ上に載せ、前記半田ボールを加熱溶融
して前記第1の電子回路基板の電極と前記第2の電子回
路基板の電極を接続することを特徴とする電子回路基板
実装方法。
4. A plurality of electronic circuit boards arranged in a row on the first electronic circuit board.
Second electronic circuit board through electrodes with solder bumps
In the arrayed been mounting method of the electronic circuit board to be connected to a plurality of electrodes, the first electronic circuit reticulated spacer mesh made of an insulating material on a substrate eye respective positions said
The electrodes are placed so as to match the positions of the electrodes provided on the first electronic circuit board, and one solder ball is placed in each mesh of the mesh spacer to remove each electrode on the first electronic circuit board. After mounting on the second electronic circuit board, its electrodes are opposed to each other.
<br/> was placing on the mesh spacer so as to face the electrode of the first electronic circuit board to respond, by heating and melting the solder balls of said first electronic circuit substrate electrode and the second Electronic circuit board characterized by connecting electrodes of the electronic circuit board
How to implement.
【請求項5】 第1の電子回路基板に列設された複数の
電極それぞれを半田バンプを介して第2の電子回路基板
列設された複数の電極に接続する電子回路基板の実装
方法において、前記第1の電子回路基板上に弾力性およ
び絶縁性を有する材料からなる網スペーサを網の目そ
れぞれの位置が前記第1の電子回路基板に設けられた電
極の位置に合うように載せ、さらに前記第2の電子回路
基板をその電極が対応する前記第1の電子回路基板の電
極に対向するように前記網状スペーサに載せてから前記
第1の電子回路基板の電極と前記第2の電子回路基板の
電極との間に予め設けられた半田を加熱溶融した状態で
前記第2の電子回路基板を前記第1の電子回路基板に向
けて押し付ける力を加えた後にこの力をゆるめてから前
記半田を冷却凝固させることを特徴とする電子回路基板
実装方法。
5. A plurality of electronic devices arranged in a line on the first electronic circuit board.
In a mounting method of an electronic circuit board , wherein each electrode is connected to a plurality of electrodes arranged in a row on a second electronic circuit board via solder bumps , a material having elasticity and insulation on the first electronic circuit board. net-like spacer eyes respective positions of the network consisting of the put to match the position of the electrode provided on the first electronic circuit substrate and said second electronic circuit
The substrate is electrically connected to the electrode of the first electronic circuit board to which the electrode corresponds.
Wherein the put on the mesh spacer so as to face the pole
In a state in which the solder previously provided between the electrode of the first electronic circuit board and the electrode of the second electronic circuit board is heated and melted.
Electronic circuit board, characterized in that for cooling and solidifying the solder the second electronic circuit board loosen the force after adding force pressing toward the first electronic circuit board
How to implement.
JP5016041A 1993-02-03 1993-02-03 LSI mounting structure Expired - Lifetime JP2513112B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5016041A JP2513112B2 (en) 1993-02-03 1993-02-03 LSI mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5016041A JP2513112B2 (en) 1993-02-03 1993-02-03 LSI mounting structure

Publications (2)

Publication Number Publication Date
JPH06232203A JPH06232203A (en) 1994-08-19
JP2513112B2 true JP2513112B2 (en) 1996-07-03

Family

ID=11905496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5016041A Expired - Lifetime JP2513112B2 (en) 1993-02-03 1993-02-03 LSI mounting structure

Country Status (1)

Country Link
JP (1) JP2513112B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6436930A (en) * 1987-07-31 1989-02-07 Fuji Heavy Ind Ltd Accessories driving gear for engine
KR100379562B1 (en) * 2001-02-15 2003-04-10 앰코 테크놀로지 코리아 주식회사 flip chip bonding method in semiconductor package
JP4736948B2 (en) * 2006-05-22 2011-07-27 株式会社デンソー Electronic component mounting method
US20090127703A1 (en) 2007-11-20 2009-05-21 Fujitsu Limited Method and System for Providing a Low-Profile Semiconductor Assembly
JP2011119580A (en) * 2009-12-07 2011-06-16 Fujitsu Ltd Electronic device and method of manufacturing the same
JP5975040B2 (en) 2011-12-09 2016-08-23 住友電気工業株式会社 Imaging device and manufacturing method thereof
JP7087328B2 (en) * 2017-10-03 2022-06-21 富士通株式会社 Electronic devices and manufacturing methods for electronic devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153495A (en) * 1981-03-18 1982-09-22 Sharp Kk Method of producing printed circuit board
JPH01196843A (en) * 1988-02-02 1989-08-08 Seiko Epson Corp Method of assembling integrated circuit device
JPH0410635A (en) * 1990-04-27 1992-01-14 Shimadzu Corp Flip chip package mounting

Also Published As

Publication number Publication date
JPH06232203A (en) 1994-08-19

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