JP2508634Y2 - Resin-sealed pin head type semiconductor device - Google Patents

Resin-sealed pin head type semiconductor device

Info

Publication number
JP2508634Y2
JP2508634Y2 JP1990060310U JP6031090U JP2508634Y2 JP 2508634 Y2 JP2508634 Y2 JP 2508634Y2 JP 1990060310 U JP1990060310 U JP 1990060310U JP 6031090 U JP6031090 U JP 6031090U JP 2508634 Y2 JP2508634 Y2 JP 2508634Y2
Authority
JP
Japan
Prior art keywords
header
semiconductor substrate
solder
diameter
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1990060310U
Other languages
Japanese (ja)
Other versions
JPH0418456U (en
Inventor
英城 倉持
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1990060310U priority Critical patent/JP2508634Y2/en
Publication of JPH0418456U publication Critical patent/JPH0418456U/ja
Application granted granted Critical
Publication of JP2508634Y2 publication Critical patent/JP2508634Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は汎用の電子部品として用いられる樹脂封止ピ
ンヘッド型半導体素子に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a resin-sealed pin head type semiconductor element used as a general-purpose electronic component.

〔従来の技術〕[Conventional technology]

第3図は従来の樹脂封止ピンヘッド型半導体素子の構
造の一例を示し、例えばダイオードなどの半導体基体3
の上面および下面のそれぞれの電極にリードピン1のヘ
ッダ1Aの端面1AAがはんだ2によって接合される。半導
体基体3の周囲には、例えば樹脂からなる絶縁性保護膜
4が設けられている。リードピン1のリード1Bはそれぞ
れこの半導体素子の電極リードを構成する。
FIG. 3 shows an example of the structure of a conventional resin-sealed pin head type semiconductor element, for example, a semiconductor substrate 3 such as a diode.
The end surface 1AA of the header 1A of the lead pin 1 is joined to the respective electrodes on the upper surface and the lower surface thereof by solder 2. An insulating protective film 4 made of, for example, resin is provided around the semiconductor substrate 3. The leads 1B of the lead pins 1 respectively form the electrode leads of this semiconductor element.

〔考案が解決しようとする課題〕[Problems to be solved by the device]

前述の樹脂封止ピンヘッド型半導体素子においては、
リードピンのヘッダーは半導体基体の電極面全体と接合
する必要があるため、通常、その端面の直径は半導体基
体の直径より大きく作られ、端面周囲には印加電圧によ
って生じる電界を緩和するための丸みが設けられる。し
かしながら、このようなヘッダーを有するリードピンで
は、半導体基体とリードピンとの関係位置を出す基準が
なく接合の際位置決めが難しいという問題が生じてい
る。また、接合の際余剰のはんだがヘッダー側面に流れ
出しヘッダ側面にはんだが付着する。一般に、はんだは
水分による腐食に弱く、水分が浸入した際、ヘッダー側
面に流れ出たはんだの腐食の影響が半導体基体に及び、
その特性が劣化する問題がある。
In the resin-sealed pin head type semiconductor element described above,
Since the header of the lead pin needs to be bonded to the entire electrode surface of the semiconductor substrate, the diameter of the end face is usually made larger than the diameter of the semiconductor substrate, and a roundness for relaxing the electric field generated by the applied voltage is formed around the end face. It is provided. However, in the lead pin having such a header, there is a reference that the relational position between the semiconductor substrate and the lead pin is not provided, and there is a problem that positioning is difficult at the time of joining. In addition, excessive solder flows out to the side surface of the header at the time of joining, and the solder adheres to the side surface of the header. Generally, solder is vulnerable to corrosion due to moisture, and when moisture invades, the influence of corrosion of the solder flowing out to the side surface of the header affects the semiconductor substrate,
There is a problem that its characteristics deteriorate.

本考案の課題は前述の問題点を解決し、半導体基体と
リードピンとの接合の位置決めが容易で、かつ、接合の
際、流れ出た余剰のはんだの水分による腐食の影響を少
なくした樹脂封止ピンヘッド型半導体素子を提供するこ
とにある。
An object of the present invention is to solve the above-mentioned problems, to easily position the joint between the semiconductor substrate and the lead pin, and to reduce the influence of corrosion of the excess solder flowing out at the time of joining, which is the resin-sealed pin head. Type semiconductor device.

〔課題を解決するための手段〕[Means for solving the problem]

前述の課題を解決するために、本考案の樹脂封止ピン
ヘッド型半導体素子においては、リードの一端にヘッダ
ーを有する一対のリードピンと、該ヘッダー間に挟まれ
上面および下面のそれぞれの電極が各ヘッダーにはんだ
にて接合される半導体基体と、前記半導体基体,はんだ
およびヘッダーの外表面を覆う絶縁性保護膜とからなる
半導体素子において、前記ヘッダーは最も直径が大きな
部分がはんだを介して前記半導体基体と接合される面端
であって、その直径は前記半導体の直径と同一寸法であ
り、かつリード側にいくに従い径小となる傾斜部を有
し、該傾斜部に余剰のはんだを配設するようにする。
In order to solve the above-mentioned problems, in the resin-sealed pin head type semiconductor device of the present invention, a pair of lead pins having a header at one end of a lead, and electrodes on the upper surface and the lower surface sandwiched between the headers have respective headers. In a semiconductor element composed of a semiconductor substrate bonded to the solder by a solder, and an insulating protective film covering the semiconductor substrate, the solder, and the outer surface of the header, the header has the largest diameter part via the solder. A surface end to be joined with the semiconductor device, the diameter of which is the same as the diameter of the semiconductor, and has an inclined portion whose diameter becomes smaller toward the lead side, and an excess solder is disposed on the inclined portion. To do so.

〔作用〕[Action]

本考案の樹脂封止ピンヘッド型半導体素子において
は、半導体基体の直径とリードピンのヘッダーの直径を
同一寸法としたのでこれらの外周を基準として位置決め
することにより、半導体基体の中心軸とヘッダーの中心
軸とが正しく合致する。また、半導体基体の電極が接合
されるヘッダーにリード側にいくに従い径小となる傾斜
部を設けたので、ヘッダーと半導体基体電極との接合の
際、余剰のはんだは面端からこの傾斜部を伝って、半導
体基体から離れる方向へ流れ、ヘッダーと半導体基体電
極との間は余剰はんだがなく略均一な厚さとなり、この
箇所での水分によるはんだの腐食影響を少なくすること
ができる。
In the resin-sealed pin head type semiconductor device of the present invention, the diameter of the semiconductor substrate and the diameter of the header of the lead pin are set to the same size. And match exactly. Further, since the header to which the electrode of the semiconductor substrate is joined is provided with the inclined portion whose diameter becomes smaller toward the lead side, when the header and the semiconductor substrate electrode are joined, the excess solder is removed from the surface end of this inclined portion. As a result, the solder flows in a direction away from the semiconductor substrate, and there is no excess solder between the header and the semiconductor substrate electrode, so that the thickness is substantially uniform, and it is possible to reduce the influence of moisture on the solder at this point.

〔実施例〕〔Example〕

第1図は本考案の一実施例における樹脂封止ピンヘッ
ド型半導体素子の断面図であり、例えばダイオードなど
の半導体基体3の上面および下面の電極それぞれに、リ
ードピン5のヘッダー5Aの端面5AAがはんだ2によって
接合される。半導体基体3の周囲には、例えば樹脂から
なる絶縁性保護膜4が設けられている。リードピン5の
リード5Bはそれぞれこの半導体素子の電極リードを構成
する。
FIG. 1 is a cross-sectional view of a resin-sealed pin head type semiconductor device according to an embodiment of the present invention. For example, an end surface 5AA of a header 5A of a lead pin 5 is soldered to electrodes on the upper and lower surfaces of a semiconductor substrate 3 such as a diode. Joined by two. An insulating protective film 4 made of, for example, resin is provided around the semiconductor substrate 3. The leads 5B of the lead pins 5 respectively form the electrode leads of this semiconductor element.

本考案においては、半導体基体の直径とリードピンの
ヘッダー端面の直径を同一寸法とし、かつ、半導体基体
の電極が接合されるヘッダーの反リード側端面外周から
リード側内方向に傾斜が設けてある。
In the present invention, the diameter of the semiconductor substrate and the diameter of the end face of the header of the lead pin are set to be the same size, and an inclination is provided inward from the outer periphery of the end face of the header to which the electrode of the semiconductor substrate is joined.

第2図は本考案において、半導体基体3とリードピン
5のヘッダー5Aの位置決め方法を示す断面図であり、半
導体基体3とヘッダー5Aの直径より僅かに大きい内径の
孔6Aを有する組立治具6の孔6A内に半導体基体3を中心
にして両側にそれぞれのリードピンのヘッダー5Aがくる
ように挿入する。半導体基体3と両側に置かれたそれぞ
れヘッダー5Aは外周を基準として位置決めされ、半導体
基体3の中心軸とそれぞれのヘッダー5Aの中心軸とが正
しく合致する。
FIG. 2 is a cross-sectional view showing a method of positioning the semiconductor substrate 3 and the header 5A of the lead pin 5 in the present invention, showing the assembly jig 6 having the hole 6A having an inner diameter slightly larger than the diameter of the semiconductor substrate 3 and the header 5A. The header 5A of each lead pin is inserted into the hole 6A with the semiconductor substrate 3 as the center on both sides. The semiconductor substrate 3 and the headers 5A placed on both sides are positioned with the outer periphery as a reference, and the central axis of the semiconductor substrate 3 and the central axis of each header 5A are correctly aligned.

また、半導体基体の電極が接合されるヘッダーの反リ
ード側端面外周からリード側の内方向に傾斜を設けたの
で、ヘッダー端面と半導体電極との接合の際、余剰のは
んだは端面外周からこの傾斜を伝って半導体基体から離
れたヘッダーの反対面に流れ、水分による腐食の影響を
少なくすることができる。また、余剰のはんだが端面外
周から傾斜部へ回り込む際、端面外周を覆い、この外周
に丸みを付け、端面周囲に印加電圧によって生じる電界
を緩和する。本考案では、電極の接合の際、前記電界緩
和作用を考慮し多少多目にはんだを使用することが望ま
しい。更にまた、半導体基体の周囲に設ける絶縁性保護
膜4は半導体基体3とリードピン5のヘッダー5Aの直径
が等しいので、必要とされる均一な厚さの絶縁保護膜の
形成が容易で、絶縁保護膜の応力は緩和され半導体基体
への影響を極小に抑えることができる。この応力緩和
は、特に、熱サイクルに対して有効である。
Further, since the inclination is provided inward from the outer circumference of the end surface of the header to which the electrode of the semiconductor substrate is joined to the lead side inward, excess solder is inclined from the outer circumference of the end surface when the header end surface and the semiconductor electrode are joined. Flowing to the opposite surface of the header away from the semiconductor substrate, and the influence of corrosion due to moisture can be reduced. Further, when the excess solder wraps around from the outer circumference of the end face to the inclined portion, it covers the outer circumference of the end face and rounds the outer circumference to relax the electric field generated by the applied voltage around the end face. In the present invention, it is desirable to use a slightly larger amount of solder in consideration of the electric field relaxation effect when joining the electrodes. Furthermore, the insulating protective film 4 provided around the semiconductor substrate has the same diameter as the semiconductor substrate 3 and the header 5A of the lead pin 5. Therefore, it is easy to form an insulating protective film having a required uniform thickness, and the insulating protection film is formed. The stress of the film is relaxed and the influence on the semiconductor substrate can be suppressed to a minimum. This stress relaxation is particularly effective for thermal cycling.

〔考案の効果〕[Effect of device]

本考案の樹脂封止ピンヘッド型半導体素子において
は、半導体基体の直径とリードピンのヘッダーの直径を
同一寸法とし、これら外周を基準として位置決めし、半
導体基体の中心軸とヘッダーの中心軸とが正しく合致す
るようにしたので、特性が優れ、かつ、ばらつきのない
半導体素子が得られる。また、半導体基体の電極が接合
されるヘッダーにリード側にいくに従い径小となる傾斜
部を設けたので、ヘッダーと半導体基体電極との接合の
際、余剰のはんだは面端からこの傾斜部を伝って、半導
体基体から離れる方向へ流れ、ヘッダーと半導体基体電
極との間は余剰はんだがなく略均一な厚さとなり、この
箇所での水分によるはんだの腐食影響を少なくすること
ができる。更に、半導体基体の直径とヘッダーの直径が
等しく、均一な厚さの絶縁保護膜が形成できるようにし
たので、絶縁保護膜の応力による半導体基体への影響、
特に、熱サイクルにおける影響を極小に抑えることがで
きる。これらにより、電気特性が優れ、かつ電気特性の
ばらつきがなく、耐湿性・耐熱サイクルのある高性能の
樹脂封止ピンヘッド型半導体素子が得られる。
In the resin-encapsulated pin head type semiconductor device of the present invention, the diameter of the semiconductor substrate and the diameter of the header of the lead pin are set to the same size, and they are positioned with reference to their outer circumference so that the central axis of the semiconductor substrate and the central axis of the header are correctly aligned. By doing so, it is possible to obtain a semiconductor element having excellent characteristics and no variation. Further, since the header to which the electrode of the semiconductor substrate is joined is provided with the inclined portion whose diameter becomes smaller toward the lead side, when the header and the semiconductor substrate electrode are joined, the excess solder is removed from the surface end of this inclined portion. As a result, the solder flows in a direction away from the semiconductor substrate, and there is no excess solder between the header and the semiconductor substrate electrode, resulting in a substantially uniform thickness, and it is possible to reduce the corrosion effect of the solder at this location on the solder. Furthermore, since the diameter of the semiconductor substrate and the diameter of the header are equal and the insulating protective film having a uniform thickness can be formed, the influence of the stress of the insulating protective film on the semiconductor substrate,
In particular, the influence on the heat cycle can be minimized. As a result, a high-performance resin-sealed pin head type semiconductor element having excellent electric characteristics, no variation in electric characteristics, and moisture resistance / heat resistance cycle can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案の一実施例における樹脂封止ピンヘッド
型半導体素子の断面図、第2図は第1図の半導体基体と
リードピンのヘッダーの位置決め方法を示す断面図、第
3図は従来の樹脂封止ピンヘッド型半導体素子の断面図
である。 2:はんだ、3:半導体基体、4:絶縁性保護膜、5:リードピ
ン、5A:ヘッダー、5AA:端面(ヘッダー反リード側
の)、5B:リード(電極リード)、G:傾斜(ヘッダー端
面5AA外周よりリード側内方向への)。
FIG. 1 is a cross-sectional view of a resin-sealed pin head type semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing a method of positioning a semiconductor substrate and a lead pin header of FIG. 1, and FIG. It is sectional drawing of a resin-sealed pin head type semiconductor element. 2: Solder, 3: Semiconductor substrate, 4: Insulating protective film, 5: Lead pin, 5A: Header, 5AA: End surface (on the side opposite the header), 5B: Lead (electrode lead), G: Inclined (header end surface 5AA) From the outer circumference to the lead side inward direction).

Claims (1)

(57)【実用新案登録請求の範囲】(57) [Scope of utility model registration request] 【請求項1】リードの一端にヘッダーを有する一対のリ
ードピンと、該ヘッダー間に挟まれ上面および下面のそ
れぞれの電極が各ヘッダーにはんだにて接合される半導
体基体と、前記半導体基体,はんだおよびヘッダーの外
表面を覆う絶縁性保護膜とからなる半導体素子におい
て、前記ヘッダーは最も直径が大きな部分がはんだを介
して前記半導体基体と接合される面端であって、その直
径は前記半導体の直径と同一寸法であり、かつリード側
にいくに従い径小となる傾斜部を有し、該傾斜部に余剰
のはんだを配設することを特徴とする樹脂封止ピンヘッ
ド型半導体素子。
1. A pair of lead pins each having a header at one end of a lead, a semiconductor substrate sandwiched between the headers, each electrode of an upper surface and a lower surface being joined to each header by solder, said semiconductor substrate, solder and In a semiconductor element consisting of an insulating protective film covering the outer surface of the header, the header has a portion with the largest diameter which is a surface end joined to the semiconductor substrate via solder, and the diameter is the diameter of the semiconductor. A resin-sealed pin head type semiconductor element having the same size as the above, and having an inclined portion whose diameter becomes smaller toward the lead side, and excess solder is disposed on the inclined portion.
JP1990060310U 1990-06-07 1990-06-07 Resin-sealed pin head type semiconductor device Expired - Lifetime JP2508634Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990060310U JP2508634Y2 (en) 1990-06-07 1990-06-07 Resin-sealed pin head type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990060310U JP2508634Y2 (en) 1990-06-07 1990-06-07 Resin-sealed pin head type semiconductor device

Publications (2)

Publication Number Publication Date
JPH0418456U JPH0418456U (en) 1992-02-17
JP2508634Y2 true JP2508634Y2 (en) 1996-08-28

Family

ID=31587565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990060310U Expired - Lifetime JP2508634Y2 (en) 1990-06-07 1990-06-07 Resin-sealed pin head type semiconductor device

Country Status (1)

Country Link
JP (1) JP2508634Y2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129137U (en) * 1984-02-03 1985-08-30 新電元工業株式会社 Resin molded semiconductor device
JPS6356946A (en) * 1986-08-28 1988-03-11 Fuji Electric Co Ltd Semiconductor element

Also Published As

Publication number Publication date
JPH0418456U (en) 1992-02-17

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