JP2505196Y2 - Resin mold type semiconductor device - Google Patents
Resin mold type semiconductor deviceInfo
- Publication number
- JP2505196Y2 JP2505196Y2 JP1990087606U JP8760690U JP2505196Y2 JP 2505196 Y2 JP2505196 Y2 JP 2505196Y2 JP 1990087606 U JP1990087606 U JP 1990087606U JP 8760690 U JP8760690 U JP 8760690U JP 2505196 Y2 JP2505196 Y2 JP 2505196Y2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- hole
- semiconductor device
- heat sink
- semiconductor pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
【考案の詳細な説明】 産業上の利用分野 本考案は放熱板全面を樹脂にて被覆し電気的に被覆し
た樹脂モールド型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Industrial Field of the Invention The present invention relates to a resin mold type semiconductor device in which the entire surface of a heat sink is coated with a resin and electrically coated.
従来の技術 第５図は電力用半導体装置を示す。図において１は放
熱板で、肉厚部1aの一端側1bを裏面1c側より段差ｈをも
って肉薄に形成し、この肉薄部1dに透孔1eを穿設してい
る。２は放熱板１の表面1f上で肉薄部1dから離れた位置
にマウントされた半導体ペレット、３は複数本一組のリ
ードで、一本のリード3aは放熱板１に連結され、他のリ
ード3bは一端が半導体ペレット２の近傍に配置されてい
る。４は半導体ペレット２上の電極とリード3bとを電気
的に接続するワイヤ、５は半導体ペレット２、ワイヤ
４、リード３の基部、透孔1eの内周を含む放熱板１全面
を被覆した樹脂で、放熱板１の表面1f側の樹脂厚は、半
導体半導体ペレット２やワイヤ４を被覆する必要もあっ
て例えば2.5mm程度に厚く形成されているが、放熱板１
の裏面1c側の樹脂厚は耐電圧と熱伝導性を考慮して、例
えば0.5mm（500μ）程度に薄く設定され、最近では樹脂
の性能向上により0.3mm（300μ）程度のものも生産され
ている。2. Description of the Related Art FIG. 5 shows a power semiconductor device. In the figure, reference numeral 1 denotes a heat radiating plate in which one end side 1b of the thick portion 1a is thinned with a step h from the back surface 1c side, and a through hole 1e is formed in this thin portion 1d. 2 is a semiconductor pellet mounted on the surface 1f of the heat sink 1 at a position away from the thin portion 1d, 3 is a set of a plurality of leads, and one lead 3a is connected to the heat sink 1 and other leads One end of 3b is arranged near the semiconductor pellet 2. Reference numeral 4 is a wire that electrically connects the electrode on the semiconductor pellet 2 and the lead 3b. Reference numeral 5 is a resin that covers the entire surface of the heat dissipation plate 1 including the semiconductor pellet 2, the wire 4, the base of the lead 3 and the inner periphery of the through hole 1e. The resin thickness on the surface 1f side of the heat sink 1 is formed to be thick, for example, about 2.5 mm because it is necessary to cover the semiconductor semiconductor pellets 2 and the wires 4.
Considering the withstand voltage and thermal conductivity, the resin thickness on the back surface 1c side is set to a thin thickness of, for example, about 0.5 mm (500 μ). Recently, due to the improvement of resin performance, a resin thickness of about 0.3 mm (300 μ) has been produced. There is.
この半導体装置は一般的にトランスファ樹脂モールド
装置を用いて樹脂成型されるが、樹脂モールド金型内で
放熱板１は、リード３を金型で挟持するとともに、肉薄
部1dから延びる吊ピン（図示せず）を金型で挟持した
り、金型から突出した支持ピン（図示せず）によって肉
薄部1dを支持して位置決めされ、金型と放熱板裏面1cと
の間を微小間隔に保ち樹脂モールドされる。This semiconductor device is generally resin-molded using a transfer resin molding device. In the resin-molding die, the heat dissipation plate 1 holds the lead 3 between the dies and suspends pins extending from the thin portion 1d (see FIG. (Not shown) is clamped by the mold, or is positioned by supporting the thin part 1d by the support pins (not shown) protruding from the mold, and the resin is kept with a minute gap between the mold and the heat sink back surface 1c. Molded.
ここで肉薄部1aと肉薄部1dの間に段差ｈを設けるのは
吊ピンや支持ピンによる放熱板の露出部と取付面までの
沿面距離を長くするためである。Here, the step h is provided between the thin portion 1a and the thin portion 1d in order to increase the creepage distance between the exposed portion of the heat sink and the mounting surface by the hanging pin or the support pin.
この半導体装置は外部放熱器（図示せず）に取付ける
際に、取付面5aや取付穴5bが樹脂５により被覆され放熱
板１が電気的に絶縁されるため、絶縁ブッシュや絶縁シ
ートが不要で、取付作業が容易である。When this semiconductor device is mounted on an external radiator (not shown), the mounting surface 5a and the mounting hole 5b are covered with the resin 5 and the radiator plate 1 is electrically insulated, so that an insulating bush and an insulating sheet are not required. The installation work is easy.
考案が解決しようとする課題 ところで、第５図半導体装置は樹脂モールド後、樹脂
が硬化過程で収縮するが、取付面5aでは場所によって収
縮の度合いが異なり、放熱板１の肉薄部1dでは収縮が著
しく、第６図に示すように、平面６に対し数μないし数
10μの間隙７が形成されるという問題があった。Problems to be Solved by the Invention By the way, in the semiconductor device shown in FIG. 5, after the resin is molded, the resin shrinks in the curing process, but the degree of shrinkage varies depending on the location on the mounting surface 5a and the thin portion 1d of the heat sink 1 shrinks. Significantly, as shown in FIG.
There was a problem that the gap 7 of 10 μ was formed.
このような半導体装置をねじ締めすると、第７図に示
すように、収縮差によって形成された段部5cを支点とし
て半導体装置の取付面5aが傾斜状態で固定され、取付面
5aの半導体ペレット２と対向する部分が完全に浮き上が
った状態で外部放熱器に取付けられ、十分な放熱ができ
ず動作電力が低下するだけでなく、寿命が短くなるとい
う問題があった。図示例では極端な状態を示している
が、取付ネジ８の締付け力が、半導体ペレット２部分に
及ばないため、一見、取付面5aと外部放熱器とが密着し
ているようにみえても、熱的な結合が粗となり半導体装
置本来の性能を発揮できない虞があった。When such a semiconductor device is screwed, as shown in FIG. 7, the mounting surface 5a of the semiconductor device is fixed in an inclined state with the step portion 5c formed by the difference in contraction as a fulcrum.
The portion of 5a facing the semiconductor pellet 2 is attached to the external radiator in a state of being completely lifted, and there is a problem that not only the heat is not sufficiently radiated but the operating power is reduced and the life is shortened. Although the illustrated example shows an extreme state, since the tightening force of the mounting screw 8 does not reach the semiconductor pellet 2 portion, even if the mounting surface 5a and the external heat radiator seem to be in close contact with each other at first glance, There is a possibility that the thermal coupling becomes rough and the original performance of the semiconductor device cannot be exhibited.
課題を解決するための手段 本考案は上記課題の解決を目的として提案されたもの
で、肉厚部の一端に裏面に対して段差をもって肉薄部を
延長形成しかつ肉薄部に透孔または切欠きを形成した放
熱板の肉厚部表面に半導体ペレットをマウントし、この
半導体ペレット上の電極と一端を半導体ペレット近傍に
配置したリードとを電気的に接続して、上記透孔または
切欠き内に貫通する貫通孔とを形成するとともに放熱板
の裏面側を表面側に比して薄く設定しかつ貫通孔と外端
部との間に微小突起を形成して放熱板の全面を樹脂被覆
したことを特徴とする樹脂モールド型半導体装置を提供
する。Means for Solving the Problems The present invention has been proposed for the purpose of solving the above-mentioned problems, and a thin portion is formed by extending a thin portion with a step on the back surface at one end of the thick portion and a through hole or a notch is formed in the thin portion. The semiconductor pellet is mounted on the surface of the thick portion of the heat dissipation plate on which the electrode on the semiconductor pellet and one end of the semiconductor pellet are electrically connected to each other, and the lead is placed in the through hole or notch. A through hole is formed therethrough, the back side of the heat sink is set thinner than the front side, and minute projections are formed between the through hole and the outer end to cover the entire surface of the heat sink with resin. A resin mold type semiconductor device is provided.
作用 本考案によれば、放熱板の肉薄部の樹脂厚が肉厚部の
樹脂厚に対し段差分だけ厚いことによる樹脂の収縮によ
って取付面に段差が形成されても、微小突起により貫通
孔にねじ締めしても肉厚部分の取付面を外部放熱器に密
着させることができる。Effect According to the present invention, even if a step is formed on the mounting surface due to resin contraction due to the resin thickness of the thin portion of the heat sink being thicker than the resin thickness of the thick portion by the step difference, the minute projections form the through hole. Even if the screws are tightened, the mounting surface of the thick part can be brought into close contact with the external radiator.
実施例 以下に本考案の実施例を第１図から説明する。図にお
いて第５図と同一符号は同一物を示し説明を省略する。
本考案の特徴は樹脂５の取付面5aの貫通孔5bと肉薄部1d
側の外端部との間に微小突起９を設けたことのみであ
る。Embodiment An embodiment of the present invention will be described below with reference to FIG. In the figure, the same reference numerals as those in FIG.
The features of the present invention are the through hole 5b of the mounting surface 5a of the resin 5 and the thin portion 1d.
Only the minute protrusion 9 is provided between the outer end portion and the outer side portion.
この微小突起９は樹脂５の収縮を考慮に入れて、頂部
が取付面5aの放熱板肉厚部1a部分と面一もしくはこの面
よりやや突出するように形成される。In consideration of the shrinkage of the resin 5, the minute protrusions 9 are formed so that the tops thereof are flush with or slightly protrude from the thick portion 1a of the heat radiating plate of the mounting surface 5a.
この微小突起９は島状に形成してもよいし、連続して
形成してもよい。The minute protrusions 9 may be formed in an island shape or continuously.
また第２図に示すように取付穴5bを囲むように環状の
微小突起９を設けてもよい。Further, as shown in FIG. 2, an annular minute projection 9 may be provided so as to surround the mounting hole 5b.
また第３図および第４図に示すように微小突起９の外
周部に堀込み（窪み）10を設け、微小突起９の実質長さ
を長くして傾き可能とし、ねじ締め時の過度の応力を吸
収させることができる。Further, as shown in FIG. 3 and FIG. 4, a digging (recess) 10 is provided on the outer peripheral portion of the minute protrusion 9 so that the minute protrusion 9 can be lengthened so that it can be tilted. Can be absorbed.
なお、透孔1eの代わりに切欠きを設けたリードフレー
ムを用いてもよい。A lead frame provided with a notch may be used instead of the through hole 1e.
考案の効果 以上のように本考案によれば、外部放熱器などに密着
取付けが可能となり、放熱が良好で、本来の性能を発揮
でき、信頼性の高い半導体装置を実現できる。As described above, according to the present invention, a semiconductor device which can be closely attached to an external radiator or the like, has good heat dissipation, can exhibit its original performance, and is highly reliable can be realized.
第１図は本考案の実施例を示す側断面図、第２図ないし
第４図は微小突起の変形例を示し、第２図は要部斜視
図、第３図および第４図は要部側断面図を示す。第５図
は従来の半導体装置の側断面図、第６図および第７図は
第５図半導体装置の課題を説明する側面図である。 １……放熱板、1a……肉厚部、1c裏面、1d……肉薄部、
1e……透孔、1f……表面、２……半導体ペレット、３…
…リード、５……樹脂、5a……取付面、5b……貫通孔、
９……微小突起。FIG. 1 is a side sectional view showing an embodiment of the present invention, FIGS. 2 to 4 show modified examples of minute protrusions, FIG. 2 is a perspective view of essential parts, and FIGS. 3 and 4 are essential parts. A side sectional view is shown. FIG. 5 is a side sectional view of a conventional semiconductor device, and FIGS. 6 and 7 are side views for explaining the problems of the semiconductor device of FIG. 1 ... Heat sink, 1a ... Thick part, 1c back surface, 1d ... Thin part,
1e ... through hole, 1f ... surface, 2 ... semiconductor pellet, 3 ...
… Lead, 5 …… resin, 5a …… mounting surface, 5b …… through hole,
9: Small protrusion.
Claims (1)
肉薄部を延長形成しかつ肉薄部に透孔または切欠きを形
成した放熱板の肉厚部表面に半導体ペレットをマウント
し、この半導体ペレット上の電極と一端を半導体ペレッ
ト近傍に配置したリードとを電気的に接続して、上記透
孔または切欠き内に貫通する貫通孔とを形成するととも
に放熱板の裏面側を表面側に比して薄く設定しかつ貫通
孔と外端部との間に微小突起を形成して放熱板の全面を
樹脂被覆したことを特徴とする樹脂モールド型半導体装
置。1. A semiconductor pellet is mounted on the surface of a thick portion of a heat sink having a thin portion extending at one end of the thick portion with a step difference from the back surface and a through hole or notch formed in the thin portion. An electrode on the semiconductor pellet and a lead having one end arranged near the semiconductor pellet are electrically connected to each other to form a through hole penetrating into the through hole or notch, and the back side of the heat sink is placed on the front side. In comparison, a resin-molded semiconductor device is characterized in that it is made thinner and a minute protrusion is formed between the through hole and the outer end portion to cover the entire surface of the heat dissipation plate with resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990087606U JP2505196Y2 (en) | 1990-08-21 | 1990-08-21 | Resin mold type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990087606U JP2505196Y2 (en) | 1990-08-21 | 1990-08-21 | Resin mold type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0446552U JPH0446552U (en) | 1992-04-21 |
| JP2505196Y2 true JP2505196Y2 (en) | 1996-07-24 |
Family
ID=31820092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990087606U Expired - Fee Related JP2505196Y2 (en) | 1990-08-21 | 1990-08-21 | Resin mold type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2505196Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10504817B2 (en) | 2017-09-06 | 2019-12-10 | Mitsubishi Electric Corporation | Semiconductor device |
-
1990
- 1990-08-21 JP JP1990087606U patent/JP2505196Y2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10504817B2 (en) | 2017-09-06 | 2019-12-10 | Mitsubishi Electric Corporation | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0446552U (en) | 1992-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |