JP2025504149A5 - - Google Patents

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Publication number
JP2025504149A5
JP2025504149A5 JP2024546253A JP2024546253A JP2025504149A5 JP 2025504149 A5 JP2025504149 A5 JP 2025504149A5 JP 2024546253 A JP2024546253 A JP 2024546253A JP 2024546253 A JP2024546253 A JP 2024546253A JP 2025504149 A5 JP2025504149 A5 JP 2025504149A5
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JP
Japan
Prior art keywords
approximately
temperature
iii
metal
chlorinating agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024546253A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025504149A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2023/061709 external-priority patent/WO2023150520A1/en
Publication of JP2025504149A publication Critical patent/JP2025504149A/ja
Publication of JP2025504149A5 publication Critical patent/JP2025504149A5/ja
Pending legal-status Critical Current

Links

JP2024546253A 2022-02-03 2023-02-01 ハロゲン化剤として共反応体を用いた金属の原子層エッチング Pending JP2025504149A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263267499P 2022-02-03 2022-02-03
US63/267,499 2022-02-03
PCT/US2023/061709 WO2023150520A1 (en) 2022-02-03 2023-02-01 Atomic layer etching of metals using co-reactants as halogenating agents

Publications (2)

Publication Number Publication Date
JP2025504149A JP2025504149A (ja) 2025-02-06
JP2025504149A5 true JP2025504149A5 (cg-RX-API-DMAC7.html) 2025-12-05

Family

ID=85462410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024546253A Pending JP2025504149A (ja) 2022-02-03 2023-02-01 ハロゲン化剤として共反応体を用いた金属の原子層エッチング

Country Status (6)

Country Link
US (1) US20250109501A1 (cg-RX-API-DMAC7.html)
JP (1) JP2025504149A (cg-RX-API-DMAC7.html)
KR (1) KR20240154003A (cg-RX-API-DMAC7.html)
CN (1) CN118648092A (cg-RX-API-DMAC7.html)
TW (1) TW202338158A (cg-RX-API-DMAC7.html)
WO (1) WO2023150520A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121153106A (zh) * 2023-04-14 2025-12-16 弗萨姆材料美国有限责任公司 含金属材料的气相蚀刻
US20260107718A1 (en) * 2024-10-14 2026-04-16 Tokyo Electron Limited Methods for conditioning a surface prior to etching to optimize etch performance

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10283319B2 (en) * 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

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