JP2025501976A - 絶縁を有する半導体デバイスパッケージを製造するための方法 - Google Patents

絶縁を有する半導体デバイスパッケージを製造するための方法 Download PDF

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Publication number
JP2025501976A
JP2025501976A JP2024539809A JP2024539809A JP2025501976A JP 2025501976 A JP2025501976 A JP 2025501976A JP 2024539809 A JP2024539809 A JP 2024539809A JP 2024539809 A JP2024539809 A JP 2024539809A JP 2025501976 A JP2025501976 A JP 2025501976A
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Japan
Prior art keywords
conductive
plunger
slug
semiconductor device
high voltage
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Pending
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JP2024539809A
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English (en)
Japanese (ja)
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JP2025501976A5 (enExample
Inventor
トゥンサー エニス
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テキサス インスツルメンツ インコーポレイテッド
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Publication of JP2025501976A publication Critical patent/JP2025501976A/ja
Publication of JP2025501976A5 publication Critical patent/JP2025501976A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2829—Testing of circuits in sensor or actuator systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2896—Testing of IC packages; Test features related to IC packages

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Magnetic Variables (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
JP2024539809A 2021-12-30 2022-12-19 絶縁を有する半導体デバイスパッケージを製造するための方法 Pending JP2025501976A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/566,607 2021-12-30
US17/566,607 US11614482B1 (en) 2021-12-30 2021-12-30 Method for manufacturing semiconductor device package with isolation
PCT/US2022/053337 WO2023129411A1 (en) 2021-12-30 2022-12-19 Method for manufacturing semiconductor device package with isolation

Publications (2)

Publication Number Publication Date
JP2025501976A true JP2025501976A (ja) 2025-01-24
JP2025501976A5 JP2025501976A5 (enExample) 2025-12-22

Family

ID=85722586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024539809A Pending JP2025501976A (ja) 2021-12-30 2022-12-19 絶縁を有する半導体デバイスパッケージを製造するための方法

Country Status (5)

Country Link
US (1) US11614482B1 (enExample)
EP (1) EP4457527B1 (enExample)
JP (1) JP2025501976A (enExample)
CN (1) CN118302681A (enExample)
WO (1) WO2023129411A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102702092B1 (ko) * 2019-11-26 2024-09-04 삼성전자주식회사 반도체 테스트 장치 및 그 테스트 방법
US11621215B1 (en) * 2021-11-30 2023-04-04 Texas Instruments Incorporated Semiconductor device package with isolated semiconductor die and electric field curtailment

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5807763A (en) * 1997-05-05 1998-09-15 International Business Machines Corporation Electric field test of integrated circuit component
US7847392B1 (en) * 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
AT511226B1 (de) * 2011-03-17 2013-03-15 Rainer Dr Gaggl Vorrichtung zum hochspannungsprüfen von halbleiterbauelementen
US8969985B2 (en) * 2011-08-30 2015-03-03 Infineon Technologies Ag Semiconductor chip package and method
US9035422B2 (en) * 2013-09-12 2015-05-19 Texas Instruments Incorporated Multilayer high voltage isolation barrier in an integrated circuit
US11101209B2 (en) * 2017-09-29 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Redistribution structures in semiconductor packages and methods of forming same
US11201065B2 (en) * 2019-10-31 2021-12-14 Texas Instruments Incorporated Testing semiconductor components
US20210231729A1 (en) 2020-01-27 2021-07-29 Texas Instruments Incorporated High voltage integrated circuit testing interface assembly
US11322433B2 (en) * 2020-04-07 2022-05-03 Texas Instruments Incorporated Hall sensor packages
US11552013B2 (en) * 2021-03-31 2023-01-10 Texas Instruments Incorporated Fuses for packaged semiconductor devices
US11594474B2 (en) * 2021-04-30 2023-02-28 Texas Instruments Incorporated Bondwire protrusions on conductive members

Also Published As

Publication number Publication date
EP4457527B1 (en) 2026-02-25
CN118302681A (zh) 2024-07-05
WO2023129411A1 (en) 2023-07-06
EP4457527A1 (en) 2024-11-06
EP4457527A4 (en) 2025-04-23
US11614482B1 (en) 2023-03-28

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