JP2024532665A - 金属含有レジストの乾式現像性能を改善する多段階露光後処理 - Google Patents

金属含有レジストの乾式現像性能を改善する多段階露光後処理 Download PDF

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Publication number
JP2024532665A
JP2024532665A JP2024503523A JP2024503523A JP2024532665A JP 2024532665 A JP2024532665 A JP 2024532665A JP 2024503523 A JP2024503523 A JP 2024503523A JP 2024503523 A JP2024503523 A JP 2024503523A JP 2024532665 A JP2024532665 A JP 2024532665A
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JP
Japan
Prior art keywords
oxygen
metal
photoresist
euv
elevated temperature
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Pending
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JP2024503523A
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Japanese (ja)
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JP2024532665A5 (https=
Inventor
タン・サマンサ・シンファ
リー・ダ
ユー・ジェンギー
キム・ジー・イェン
パン・ヤン
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Lam Research Corp
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Lam Research Corp
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Publication date
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Publication of JP2024532665A publication Critical patent/JP2024532665A/ja
Publication of JP2024532665A5 publication Critical patent/JP2024532665A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2024503523A 2021-07-26 2022-07-15 金属含有レジストの乾式現像性能を改善する多段階露光後処理 Pending JP2024532665A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163203507P 2021-07-26 2021-07-26
US63/203,507 2021-07-26
PCT/US2022/037393 WO2023009336A1 (en) 2021-07-26 2022-07-15 Multi-step post-exposure treatment to improve dry development performance of metal-containing resist

Publications (2)

Publication Number Publication Date
JP2024532665A true JP2024532665A (ja) 2024-09-10
JP2024532665A5 JP2024532665A5 (https=) 2025-07-15

Family

ID=85087190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024503523A Pending JP2024532665A (ja) 2021-07-26 2022-07-15 金属含有レジストの乾式現像性能を改善する多段階露光後処理

Country Status (6)

Country Link
US (1) US20240329539A1 (https=)
JP (1) JP2024532665A (https=)
KR (1) KR102709877B1 (https=)
CN (1) CN117730281A (https=)
TW (1) TW202314365A (https=)
WO (1) WO2023009336A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3990983A4 (en) 2019-06-28 2023-07-26 Lam Research Corporation BAKING STRATEGIES TO INCREASE THE LITHOGRAPHIC PERFORMANCE OF A METAL CONTAINING RESIST
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
CN115702475A (zh) 2020-06-22 2023-02-14 朗姆研究公司 用于含金属光致抗蚀剂沉积的表面改性
US20250062123A1 (en) * 2023-08-17 2025-02-20 Applied Materials, Inc. Treatments for thin films used in photolithography
WO2025177886A1 (ja) * 2024-02-22 2025-08-28 東京エレクトロン株式会社 現像方法及び現像装置
US20250271755A1 (en) * 2024-02-28 2025-08-28 Inpria Corporation Controlled environment processing, rest steps, and baking processes for metal oxide-based resist patterning

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398312B1 (ko) 2000-06-30 2003-09-19 한국과학기술원 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
JP2002134402A (ja) * 2000-08-15 2002-05-10 Tokyo Electron Ltd 基板処理方法及び基板処理装置
US7682659B1 (en) * 2006-04-10 2010-03-23 The Regents Of The University Of California Fabrication of suspended carbon micro and nanoscale structures
CN106232345A (zh) 2014-04-22 2016-12-14 沙特基础工业全球技术有限公司 集成的柔性透明导电膜
US10520821B2 (en) * 2016-11-29 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography process with enhanced etch selectivity
KR20200144580A (ko) * 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
US10838304B2 (en) 2018-08-13 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Priming material for organometallic resist
US11782345B2 (en) * 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials

Also Published As

Publication number Publication date
CN117730281A (zh) 2024-03-19
KR20240032161A (ko) 2024-03-08
WO2023009336A1 (en) 2023-02-02
TW202314365A (zh) 2023-04-01
KR102709877B1 (ko) 2024-09-26
US20240329539A1 (en) 2024-10-03

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