KR102709877B1 - 금속 함유 레지스트의 건식 현상 성능을 개선하기 위한 다단계 노출-후 처리 - Google Patents

금속 함유 레지스트의 건식 현상 성능을 개선하기 위한 다단계 노출-후 처리 Download PDF

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KR102709877B1
KR102709877B1 KR1020247006338A KR20247006338A KR102709877B1 KR 102709877 B1 KR102709877 B1 KR 102709877B1 KR 1020247006338 A KR1020247006338 A KR 1020247006338A KR 20247006338 A KR20247006338 A KR 20247006338A KR 102709877 B1 KR102709877 B1 KR 102709877B1
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metal
photoresist
oxygen
euv
elevated temperature
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Korean (ko)
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KR20240032161A (ko
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사만다 시암화 탄
다 리
정이 유
지 연 김
양 판
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램 리써치 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020247006338A 2021-07-26 2022-07-15 금속 함유 레지스트의 건식 현상 성능을 개선하기 위한 다단계 노출-후 처리 Active KR102709877B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163203507P 2021-07-26 2021-07-26
US63/203,507 2021-07-26
PCT/US2022/037393 WO2023009336A1 (en) 2021-07-26 2022-07-15 Multi-step post-exposure treatment to improve dry development performance of metal-containing resist

Publications (2)

Publication Number Publication Date
KR20240032161A KR20240032161A (ko) 2024-03-08
KR102709877B1 true KR102709877B1 (ko) 2024-09-26

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KR1020247006338A Active KR102709877B1 (ko) 2021-07-26 2022-07-15 금속 함유 레지스트의 건식 현상 성능을 개선하기 위한 다단계 노출-후 처리

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US (1) US20240329539A1 (https=)
JP (1) JP2024532665A (https=)
KR (1) KR102709877B1 (https=)
CN (1) CN117730281A (https=)
TW (1) TW202314365A (https=)
WO (1) WO2023009336A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3990983A4 (en) 2019-06-28 2023-07-26 Lam Research Corporation BAKING STRATEGIES TO INCREASE THE LITHOGRAPHIC PERFORMANCE OF A METAL CONTAINING RESIST
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
CN115702475A (zh) 2020-06-22 2023-02-14 朗姆研究公司 用于含金属光致抗蚀剂沉积的表面改性
US20250062123A1 (en) * 2023-08-17 2025-02-20 Applied Materials, Inc. Treatments for thin films used in photolithography
WO2025177886A1 (ja) * 2024-02-22 2025-08-28 東京エレクトロン株式会社 現像方法及び現像装置
US20250271755A1 (en) * 2024-02-28 2025-08-28 Inpria Corporation Controlled environment processing, rest steps, and baking processes for metal oxide-based resist patterning

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398312B1 (ko) 2000-06-30 2003-09-19 한국과학기술원 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
US20170066225A1 (en) 2014-04-22 2017-03-09 Sabic Global Technologies B.V. Integrated flexible transparent conductive film
US20180149976A1 (en) 2016-11-29 2018-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography Process With Enhanced Etch Selectivity
US20200050109A1 (en) 2018-08-13 2020-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Priming Material for Organometallic Resist

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002134402A (ja) * 2000-08-15 2002-05-10 Tokyo Electron Ltd 基板処理方法及び基板処理装置
US7682659B1 (en) * 2006-04-10 2010-03-23 The Regents Of The University Of California Fabrication of suspended carbon micro and nanoscale structures
KR20200144580A (ko) * 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
US11782345B2 (en) * 2019-08-05 2023-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom antireflective coating materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398312B1 (ko) 2000-06-30 2003-09-19 한국과학기술원 유기금속을 함유하고 있는 노르보넨 단량체, 이들의고분자 중합체를 함유하는 포토레지스트, 및 그제조방법과, 포토레지스트 패턴 형성방법
US20170066225A1 (en) 2014-04-22 2017-03-09 Sabic Global Technologies B.V. Integrated flexible transparent conductive film
US20180149976A1 (en) 2016-11-29 2018-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography Process With Enhanced Etch Selectivity
US20200050109A1 (en) 2018-08-13 2020-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Priming Material for Organometallic Resist

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Publication number Publication date
JP2024532665A (ja) 2024-09-10
CN117730281A (zh) 2024-03-19
KR20240032161A (ko) 2024-03-08
WO2023009336A1 (en) 2023-02-02
TW202314365A (zh) 2023-04-01
US20240329539A1 (en) 2024-10-03

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