JP2024526566A - インピーダンスが低減された基板 - Google Patents

インピーダンスが低減された基板 Download PDF

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Publication number
JP2024526566A
JP2024526566A JP2023578158A JP2023578158A JP2024526566A JP 2024526566 A JP2024526566 A JP 2024526566A JP 2023578158 A JP2023578158 A JP 2023578158A JP 2023578158 A JP2023578158 A JP 2023578158A JP 2024526566 A JP2024526566 A JP 2024526566A
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JP
Japan
Prior art keywords
substrate
metal layer
micrometers
signal interconnects
conductive channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023578158A
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English (en)
Japanese (ja)
Other versions
JP2024526566A5 (enExample
Inventor
パティル、アニケット
ブオト、ジョアン・レイ・ビリャルバ
ウェー、ホン・ボク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2024526566A publication Critical patent/JP2024526566A/ja
Publication of JP2024526566A5 publication Critical patent/JP2024526566A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H05K1/0253Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427Power or ground buses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/20Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/267Patterned shielding planes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10159Memory
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/823Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Geometry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
JP2023578158A 2021-07-14 2022-06-14 インピーダンスが低減された基板 Pending JP2024526566A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/375,676 US20230018448A1 (en) 2021-07-14 2021-07-14 Reduced impedance substrate
US17/375,676 2021-07-14
PCT/US2022/072935 WO2023288164A1 (en) 2021-07-14 2022-06-14 Reduced impedance substrate

Publications (2)

Publication Number Publication Date
JP2024526566A true JP2024526566A (ja) 2024-07-19
JP2024526566A5 JP2024526566A5 (enExample) 2025-05-23

Family

ID=82547141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023578158A Pending JP2024526566A (ja) 2021-07-14 2022-06-14 インピーダンスが低減された基板

Country Status (7)

Country Link
US (1) US20230018448A1 (enExample)
EP (1) EP4371154A1 (enExample)
JP (1) JP2024526566A (enExample)
KR (1) KR20240034750A (enExample)
CN (1) CN117546289A (enExample)
TW (1) TW202306083A (enExample)
WO (1) WO2023288164A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021214258A1 (de) 2021-12-13 2023-06-15 Volkswagen Aktiengesellschaft Wärmepumpenkaskade und Verfahren zur Erwärmung oder Abkühlung eines Kühlmittels mittels einer Wärmepumpenkaskade
CN120109110B (zh) * 2025-05-09 2025-08-29 合肥晶合集成电路股份有限公司 金属叠层结构及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101086520B1 (ko) * 2003-06-20 2011-11-23 엔엑스피 비 브이 전자 장치, 조립체 및 전자 장치 제조 방법
TWI286916B (en) * 2004-10-18 2007-09-11 Via Tech Inc Circuit structure
TWI242889B (en) * 2004-10-20 2005-11-01 Advanced Semiconductor Eng Integrated capacitor on packaging substrate
CN101305448B (zh) * 2005-11-08 2012-05-23 Nxp股份有限公司 电容器装置、宽带系统、电子部件及电容器的制造方法
US8067840B2 (en) * 2006-06-20 2011-11-29 Nxp B.V. Power amplifier assembly
KR20090078287A (ko) * 2008-01-14 2009-07-17 삼성전자주식회사 전기기기
KR101044203B1 (ko) * 2009-11-18 2011-06-29 삼성전기주식회사 전자기 밴드갭 구조물 및 이를 포함하는 인쇄회로기판
US8436477B2 (en) * 2011-10-03 2013-05-07 Invensas Corporation Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate
US9131602B2 (en) * 2012-02-24 2015-09-08 Mediatek Inc. Printed circuit board for mobile platforms
US20140124124A1 (en) * 2012-11-08 2014-05-08 Boardtek Electronics Corporation Printed circuit board manufacturing method
US9349788B2 (en) * 2013-08-08 2016-05-24 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Thin film capacitors embedded in polymer dielectric
MY204695A (en) * 2017-12-30 2024-09-10 Intel Corp Zero-misalignment two-via structures using photoimageable dielectric, buildup film, and electrolytic plating
US10586844B2 (en) * 2018-01-23 2020-03-10 Texas Instruments Incorporated Integrated trench capacitor formed in an epitaxial layer
US11637057B2 (en) * 2019-01-07 2023-04-25 Qualcomm Incorporated Uniform via pad structure having covered traces between partially covered pads
US11955436B2 (en) * 2019-04-24 2024-04-09 Intel Corporation Self-equalized and self-crosstalk-compensated 3D transmission line architecture with array of periodic bumps for high-speed single-ended signal transmission
US12402331B2 (en) * 2021-02-09 2025-08-26 Intel Corporation Decoupling capacitors based on dummy through-silicon-via plates

Also Published As

Publication number Publication date
EP4371154A1 (en) 2024-05-22
CN117546289A (zh) 2024-02-09
KR20240034750A (ko) 2024-03-14
WO2023288164A1 (en) 2023-01-19
US20230018448A1 (en) 2023-01-19
TW202306083A (zh) 2023-02-01

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