JP2024508055A - display panel - Google Patents

Abstract

A display panel including a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first source, a first drain, a first active layer, and a first gate. The second thin film transistor includes a second source, a second drain, a second active layer, and a second gate. The first drain of the first thin film transistor is electrically connected to the second gate of the second thin film transistor. The electron mobility of the first active layer of the first thin film transistor is greater than or equal to the electron mobility of the second active layer of the second thin film transistor. A threshold voltage shift amount of the second active layer of the second thin film transistor is less than or equal to a threshold voltage shift amount of the first active layer of the first thin film transistor. [Selection diagram] Figure 2

Description

The present invention relates to the technical field of displays, and particularly to a display panel that is applicable to large-sized display devices and has two thin film transistors.

Low-temperature polycrystalline silicon (LTPS) thin film transistors are widely used in display panels of small display devices such as smartphones and tablet computers due to their high electron mobility and short response time driving characteristics. However, since the leakage current of the low temperature polysilicon thin film transistor is large, in order to prevent image delay of the display panel from occurring and affecting display screen switching, a high refresh rate is set, and the low temperature polysilicon thin film transistor is set to a high refresh rate. The charging time of the thin film transistor becomes shorter.

Furthermore, thin film transistors using metal oxides such as indium gallium zinc oxide (IGZO) have low leakage current and high stability, so that the refresh rate of the display panel can be reduced. However, since the electron mobility of the indium gallium zinc oxide thin film transistor is lower than that of the low temperature polysilicon thin film transistor, the indium gallium zinc oxide thin film transistor requires a high driving voltage.

In order to fully take advantage of the high electron mobility of the low temperature polysilicon thin film transistor and the low leakage current characteristics of the indium gallium zinc oxide thin film transistor, the prior art has developed a method for combining the low temperature polysilicon thin film transistor and the indium gallium zinc oxide thin film transistor. We have proposed a display panel that combines these, ie, a low-temperature polycrystalline oxide (LTPO) display panel.

The low-temperature polysilicon thin film transistor is constructed by passivating dangling bonds at the interface between the P-type silicon semiconductor and the N-type silicon semiconductor. A certain proportion of hydrogen (H) atoms is required to reduce defects at the interface. In the indium gallium zinc oxide thin film transistor, when the proportion of hydrogen atoms is high, the balance of oxygen (O) atomic vacancies and chemical bonds (Metal-O) between metal atoms and oxygen atoms in the indium gallium zinc oxide is improved. This also causes a negative shift in the threshold voltage shift amount (Vth) of the indium gallium zinc oxide thin film transistor. Therefore, the low temperature polysilicon thin film transistor and the indium gallium zinc oxide thin film transistor have low compatibility with each other and are difficult to manufacture.

Since the manufacturing process of the low temperature polysilicon oxide display panel is complicated, the manufacturing process of the low temperature polysilicon thin film transistor must be performed separately from the manufacturing process of the indium gallium zinc oxide thin film transistor. In the prior art, the low temperature polysilicon thin film transistor and the indium gallium zinc oxide thin film transistor can be smoothly combined by adjusting the process recipe. Since the crystal uniformity of the low temperature polysilicon is poor, it affects the electron mobility and threshold voltage shift amount of the low temperature polysilicon thin film transistor. Furthermore, due to the compatibility of the low temperature polysilicon thin film transistor and the indium gallium zinc oxide thin film transistor, it is difficult to apply the low temperature polysilicon oxide display panel to the large display device. Therefore, at present, the low temperature polysilicon oxide display panel can only be applied to small display devices such as smart watches and smart bracelets.

The conventional low-temperature polysilicon oxide display panel has a technical problem that it cannot be applied to the large display device.In order to solve the above technical problem, two thin film transistors that can be applied to the large display device were developed. There is a need for a display panel that has the following characteristics.

The present invention provides a display panel that can be applied to a large-sized display device and has two thin film transistors. The display panel includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first source, a first drain, a first active layer, and a first gate. The second thin film transistor includes a second source, a second drain, a second active layer, and a second gate. The first drain of the first thin film transistor is electrically connected to the second gate of the second thin film transistor. The electron mobility of the first active layer of the first thin film transistor is greater than or equal to the electron mobility of the second active layer of the second thin film transistor. A threshold voltage shift amount of the second active layer of the second thin film transistor is less than or equal to a threshold voltage shift amount of the first active layer of the first thin film transistor.

In this embodiment, the electron mobility of the first active layer of the first thin film transistor is 1.5 times or more of the electron mobility of the second active layer of the second thin film transistor.

In this embodiment, the electron mobility of the first active layer of the first thin film transistor is 20 cm ² /(V·s) or more.

In this embodiment, the threshold voltage shift amount of the second active layer of the second thin film transistor is 1 volt or less.

In this embodiment, the material of the first active layer of the first thin film transistor includes indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof.

In this embodiment, the material of the second active layer of the second thin film transistor includes a metal oxide doped with a rare earth metal element or a fluorine-based compound.

In other embodiments, the first thin film transistor further includes a third active layer. The third active layer is stacked with the first active layer. Non-channel regions at both ends of the third active layer are electrically connected to non-channel regions at both ends of the first active layer.

In this embodiment, the average electron mobility of the first active layer and the third active layer of the first thin film transistor is greater than or equal to the electron mobility of the second active layer of the second thin film transistor.

In this embodiment, the average electron mobility of the first active layer and the third active layer of the first thin film transistor is 1.5 times or more of the electron mobility of the second active layer of the second thin film transistor. be.

In this embodiment, the average electron mobility of the first active layer and the third active layer of the first thin film transistor is 20 cm ² /(V·s) or more.

In this embodiment, the material of the first active layer of the first thin film transistor is the same as the material of the second active layer of the second thin film transistor.

In this embodiment, the first active layer of the first thin film transistor and the second active layer of the second thin film transistor are provided by the same manufacturing process.

In this embodiment, the material of the third active layer of the first thin film transistor includes indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof.

In this embodiment, in the first thin film transistor, the material of the first active layer is different from the material of the third active layer.

In another embodiment, the display panel further includes a data line, a scan line, and a light emitting unit. The data line is electrically connected to the first source of the first thin film transistor. The scan line is electrically connected to the first gate of the first thin film transistor. The light emitting unit includes a first electrode and a second electrode facing the first electrode. The first electrode is electrically connected to the second source of the second thin film transistor.

In this embodiment, the display panel further includes a capacitor. The capacitor includes a first electrode plate and a second electrode plate facing the first electrode plate. The first electrode plate is electrically connected to the first drain of the first thin film transistor and the second gate of the second thin film transistor. The second electrode plate is electrically connected to the second source of the second thin film transistor and the light emitting unit.

In another embodiment, the display panel further includes a light blocking layer. The light blocking layer is provided under the second thin film transistor.

The display panel applicable to the large-sized display device according to the present invention includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes the first source, the first drain, the first active layer, and the first gate. The second thin film transistor includes the second source, the second drain, the second active layer, and the second gate. The first drain of the first thin film transistor is electrically connected to the second gate of the second thin film transistor. The electron mobility of the first active layer of the first thin film transistor is greater than or equal to the electron mobility of the second active layer of the second thin film transistor. The threshold voltage shift amount of the second active layer of the second thin film transistor is less than or equal to the threshold voltage shift amount of the first active layer of the first thin film transistor. Furthermore, the first thin film transistor further includes a third active layer. By providing the third active layer in a stacked manner with the first active layer, the average electron mobility of the first active layer and the third active layer of the first thin film transistor is the same as that of the second thin film transistor. The electron mobility is higher than the above-mentioned electron mobility of the second active layer. By designing the structure of the two thin film transistors of the display panel and designing the structure of the two active layers of the first thin film transistor, the present invention makes the first thin film transistor a switching thin film transistor with a short response time, and makes the second thin film transistor a switching thin film transistor with a short response time. The drive transistor has a high The first thin film transistor with two active layers can improve the manufacturing yield, and can also solve the problem that the conventional low temperature polysilicon oxide display panel cannot be applied to large-sized display devices.

FIG. 1 is a circuit diagram of a display panel according to the present invention. FIG. 2 is a schematic structural diagram of a first embodiment of the display panel of the present invention. FIG. 3 is a schematic structural diagram of a second embodiment of the display panel of the present invention.

In order to make the above and other objects, features, and advantages of the present invention more clear, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Please refer to FIG. 1, which is a circuit diagram of a display panel of the present invention. The display panel of the present invention includes a first thin film transistor 100 and a second thin film transistor 200. The first thin film transistor 100 includes a first source 110, a first drain 120, a first active layer (not shown), and a first gate 140. The second thin film transistor 200 includes a second source 210, a second drain 220, a second active layer (not shown), and a second gate 240.

As shown in FIG. 1, the display panel further includes a data line D, a scan line S, and a light emitting unit 300. The data line D is electrically connected to the first source 110 of the first thin film transistor 100. The scan line S is electrically connected to the first gate 140 of the first thin film transistor 100. The first thin film transistor 100 is for receiving display signals transferred by the data line D and the scanning line S of the display panel, and controls the input voltage of the first gate 140 to receive the display signal. The first thin film transistor 100 can control on/off of current flowing across the first source 110 and the first drain 120 .

Further, as shown in FIG. 1, the display panel further includes a common anode Vdd and a common cathode Vss. The common anode Vdd is electrically connected to the second drain 220 of the second thin film transistor 200. The first drain 120 of the first thin film transistor 100 is electrically connected to the second gate 240 of the second thin film transistor 200. Both ends of the light emitting unit 300 are electrically connected to the second source 210 of the second thin film transistor 200 and the common cathode Vss. The second thin film transistor 200 is for receiving the switching signal of the first drain 120 of the first thin film transistor 100, and by controlling the input voltage of the second gate 240, the second thin film transistor 200 Turning on and off of current across the second source 210 and the second drain 220 may be controlled. When the current of the common anode Vdd is input to the light emitting unit 300 through the second thin film transistor 200, the light emitting unit 300 can emit light, and an image can be displayed on the display panel.

Accordingly, among the first thin film transistor 100 and the second thin film transistor 200, the first thin film transistor 100 is used as a switching thin film transistor that turns on and off the second thin film transistor, and the second thin film transistor 200 is used as a switching thin film transistor that turns on and off the second thin film transistor. Used as a drive thin film transistor.

In one embodiment, as shown in FIG. 1, the display panel further includes a capacitor 400. The capacitor 400 includes a first polar plate 410 and a second polar plate 420 facing the first polar plate 410. The first electrode plate 410 is electrically connected to the first drain 120 of the first thin film transistor 100 and the second gate 240 of the second thin film transistor 200. The second electrode plate 420 is electrically connected to the second source 210 of the second thin film transistor 200 and the light emitting unit 300. The capacitor is for storing a switching signal inputted by the first thin film transistor 100, and converts the switching signal into a current signal required for the light emitting unit 300 to emit light, so that different gradation values can be stored. Display.

In actual implementation, the light emitting unit 300 may include an organic light-emitting diode (OLED), a mini-light-emitting diode (mini-LED), a micro-light-emitting diode (micro-light-emitting diode), or a micro-light-emitting diode (mini-LED). emitting diodes (micro-LEDs), quantum dots (electroluminescent quantum dots, ELQDs), etc.

(First example)

Please refer to FIG. 2, which is a structural schematic diagram of a first embodiment of the display panel of the present invention.

In this embodiment, the display panel includes a lower substrate 510 and an upper substrate 520 for protecting all elements in the display panel, and the lower substrate 510 and the upper substrate 520 are rigid substrates. The substrate includes, but is not limited to, a glass substrate or a polyimide substrate, which may also be a flexible substrate.

The display panel of this embodiment includes the first thin film transistor 100 and the second thin film transistor 200. The first thin film transistor 100 includes the first active layer 131, the first gate insulating layer 150, and the first gate 140, which are stacked in sequence, and is electrically connected to both ends of the first active layer 131. The first source 110 and the first drain 120 are further included. The second thin film transistor 200 includes the second active layer 230, the second gate insulating layer 250, and the second gate 240, which are sequentially stacked, and is electrically connected to both ends of the second active layer 230. The second source 210 and the second drain 220 are further included.

In this embodiment, the first thin film transistor 100 and the second thin film transistor 200 include top gate type thin film transistors. With advances in manufacturing processes, the top-gate thin film transistor reduces the number of manufacturing steps of the display panel, thereby reducing the manufacturing cost of the display panel.

The display panel of this embodiment further includes the light emitting unit 300. This embodiment will be explained by taking the light emitting unit 300 as an organic light emitting diode, and the light emitting unit 300 includes a first electrode 310, a second electrode 320 opposite to the first electrode 310, and a light emitting layer 330. including. The first electrode 310 is electrically connected to the second source 210 of the second thin film transistor 200. When the second thin film transistor 200 controls the current to turn on the light emitting unit 300, the current flows between the first electrode 310 as an anode and the second electrode 320 as a cathode. Under the action of the current, electrons and holes in the light emitting unit 300 are combined in the light emitting layer 330 to excite light, thereby achieving image display on the display panel.

In this embodiment, the first thin film transistor 100 is the switching thin film transistor with a short response time, and the second thin film transistor 200 is the drive transistor with high stability. Therefore, the first active layer 131 of the first thin film transistor 100 uses a material with high electron mobility, and the second active layer 230 of the second thin film transistor 200 uses a material with low leakage current. That is, the electron mobility of the first active layer 131 of the first thin film transistor 100 of the present embodiment is greater than or equal to the electron mobility of the second active layer 230 of the second thin film transistor 200, and A threshold voltage shift amount of the second active layer 230 is less than or equal to a threshold voltage shift amount of the first active layer 131 of the first thin film transistor 100 .

In this embodiment, the material of the first active layer 131 of the first thin film transistor 100 includes, but is not limited to, indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof. It's not a thing. Preferably, the material of the first active layer 131 is indium gallium zinc oxide (IGZO), indium gallium zinc tin oxide (IGZTO), or indium zinc tin oxide (IGZTO). The material having high electron mobility, such as indium zinc tin oxide (IZTO), may also be used. According to experiments conducted by the inventors, the electron mobility of the first active layer 131 of the first thin film transistor 100 is at least 20 cm ² /(V·s). In this embodiment, the electron mobility of the first active layer 131 of the first thin film transistor 100 may reach 1.5 times or more of the electron mobility of the second active layer 230 of the second thin film transistor 200. can.

The higher the electron mobility, the shorter the response time of the first thin film transistor 100, so the first thin film transistor 100 as the switching thin film transistor has excellent technical advantages.

In this embodiment, the material of the second active layer 230 of the second thin film transistor 200 includes a metal oxide doped with a rare earth metal element or a fluorine-based compound, but is not limited thereto. Preferably, the material of the second active layer 230 may be a metal oxide doped with a lanthanide such as praseodymium (Pr), cerium (Ce), or lanthanum (La), or nitrogen trifluoride. ( _NF3 ), carbon tetrafluoride ( _CF4 ), or sulfur hexafluoride ( _SF6 ) doped metal oxides, the metal oxides may be It may also be a metal oxide with a low indium content. According to experiments conducted by the inventors, the threshold voltage shift amount of the second active layer 230 of the second thin film transistor 200 is 1 volt or less. The smaller the threshold voltage shift amount, the higher the stability of the second thin film transistor 200, and thus the second thin film transistor 200 as the driving thin film transistor has excellent technical advantages.

In this embodiment, in order to further increase the stability of the second thin film transistor 200, the display panel further includes a light blocking layer 600. Since the material properties of the second active layer 230 are easily affected by the light, in this embodiment, the light shielding layer 600 is provided under the second thin film transistor 200, so that the second active layer 230 is easily affected by the light. The high stability of the second thin film transistor 200 is maintained by shielding the layer 230 from possible light. The light shielding layer 600 functions as a wiring for the second source 210 of the second thin film transistor 200, thereby simplifying the structure of the display panel.

(Second example)

Please refer to FIG. 3, which is a structural schematic diagram of a second embodiment of the display panel of the present invention.

In this embodiment, the main components of the display panel are, for example, the lower substrate 510, the upper substrate 520, the first source 110 and the first drain 120 of the first thin film transistor 100, and the second thin film transistor 200. The second source 210, the second drain 220, the light blocking layer 600, the light emitting unit 300, etc. have the same material characteristics, corresponding positions, and connection relationships. Preferably, the first thin film transistor 100 and the second thin film transistor 200 are also top gate type thin film transistors so as to reduce the manufacturing process of the display panel and reduce the manufacturing cost of the display panel.

However, the difference between this embodiment and the first embodiment is that the first thin film transistor 100 further includes a third active layer. The third active layer is stacked with the first active layer 131 and is provided on the first active layer 131 . Non-channel regions 132a and 132b at both ends of the third active layer are electrically connected to non-channel regions 131a and 131b at both ends of the first active layer 131, respectively. In this embodiment, the non-channel region 132a of the third active layer and the non-channel region 131a of the first active layer 131 are made conductive, and the non-channel region 132b of the third active layer and the first The non-channel region 131b of the active layer 131 is made conductive. Therefore, in the first thin film transistor 100, the first source 110 is connected to the third source 110 through the non-channel region 132a of the third active layer and the non-channel region 131a of the first active layer 131, which are made conductive. The first drain 120 is electrically connected to the active layer and the first active layer 131 at the same time, and the first drain 120 is connected to the non-channel region 132b of the third active layer and the non-channel region of the first active layer 131, which are made conductive. It is electrically connected to the third active layer and the first active layer 131 at the same time through the region 131b.

Similar to the first embodiment of the present invention, in this embodiment, the first thin film transistor 100 is the switching thin film transistor with a short response time, and the second thin film transistor 200 is the drive transistor with high stability. Therefore, the third active layer of the first thin film transistor 100 uses a material with high electron mobility, and the second active layer 230 of the second thin film transistor 200 uses a material with low leakage current. That is, the average electron mobility of the first active layer 131 and the third active layer of the first thin film transistor 100 of this embodiment is greater than or equal to the electron mobility of the second active layer 230 of the second thin film transistor 200. The threshold voltage shift amount of the second active layer 230 of the second thin film transistor 200 is less than or equal to the average threshold voltage shift amount of the first active layer 131 and the third active layer of the first thin film transistor 100.

In this embodiment, in order to further improve the average electron mobility of the first active layer 131 and the third active layer of the first thin film transistor 100, the material of the third active layer of the first thin film transistor 100 is include, but are not limited to, indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof. Preferably, the material of the first active layer 131 and the material of the third active layer may be the indium gallium zinc oxide and the indium tin oxide, respectively, or the indium gallium zinc oxide, respectively. The material having high electron mobility such as indium gallium tin oxide or the like may also be used. According to experiments conducted by the inventors, the average electron mobility of the first active layer 131 and the third active layer of the first thin film transistor 100 is at least 20 cm ² /(V·s), and that The electron mobility can be made higher than 2 to 3 times the electron mobility of the first active layer 131 of the first thin film transistor 100 in one embodiment. The higher the electron mobility, the shorter the response time of the first thin film transistor 100, so the first thin film transistor 100 as the switching thin film transistor has excellent technical advantages.

Note that in the first thin film transistor 100, the material of the first active layer 131 described in the embodiment described above is different from the material of the third active layer. However, "different" in this embodiment means that they are made of different materials, and the base material of the first active layer 131 may be the same as the base material of the third active layer, or both may be made of different materials. The material of the first active layer 131 and the material of the third active layer can be formed by doping metal elements in different proportions.

In this embodiment, in order to simplify the manufacturing flow of the display panel, the first active layer 131 of the first thin film transistor 100 is made of the same material as the second active layer 230 of the second thin film transistor 200. It may be configured to be. Therefore, the first active layer 131 of the first thin film transistor 100 may be formed simultaneously with the second active layer 231 of the second thin film transistor 200 in the same manufacturing process, thereby improving the manufacturing flow of the display panel. Simplify and improve manufacturing efficiency.

In this embodiment, the material of the second active layer 230 of the second thin film transistor 200 and its characteristics are the same as those described in the first embodiment, so detailed description thereof will be omitted here.

The display panel applicable to the large-sized display device according to the present invention includes a first thin film transistor 100 and a second thin film transistor 200. The first thin film transistor 100 includes the first source 110, the first drain 120, the first active layer 131, and the first gate 140. The second thin film transistor 200 includes the second source 210, the second drain 220, the second active layer 230, and the second gate 240. The first drain 120 of the first thin film transistor 100 is electrically connected to the second gate 240 of the second thin film transistor 200. The electron mobility of the first active layer 131 of the first thin film transistor 100 is greater than or equal to the electron mobility of the second active layer 230 of the second thin film transistor 200. The threshold voltage shift amount of the second active layer 230 of the second thin film transistor 200 is less than or equal to the threshold voltage shift amount of the first active layer 131 of the first thin film transistor 100. Furthermore, the first thin film transistor 100 further includes a third active layer. By providing the third active layer in a stacked manner with the first active layer 131, the average electron mobility of the first active layer 131 and the third active layer of the first thin film transistor 100 is equal to that of the second active layer. The electron mobility is higher than the electron mobility of the second active layer 230 of the thin film transistor 200. By designing the structure of the two thin film transistors of the display panel and designing the structure of the two active layers of the first thin film transistor 100, the present invention makes the first thin film transistor 100 the switching thin film transistor with a short response time, and the second thin film transistor 200 is the highly stable drive transistor. In addition, the first thin film transistor 100 with two active layers can improve manufacturing yield, and can also solve the problem that the conventional low-temperature polysilicon oxide display panel cannot be applied to large-sized display devices.

The above is merely a preferred embodiment of the present invention, and those skilled in the art will be able to make further improvements and modifications without departing from the spirit of the present invention, and these improvements and modifications are also included in the present invention. Please note that this should be considered as the scope of protection.

Claims (20)

a first thin film transistor including a first source, a first drain, a first active layer, and a first gate;
a second thin film transistor including a second source, a second drain, a second active layer, and a second gate;
The first drain of the first thin film transistor is electrically connected to the second gate of the second thin film transistor, and the electron mobility of the first active layer of the first thin film transistor is equal to the second gate of the second thin film transistor. A display panel wherein the electron mobility of the active layer is greater than or equal to that of the active layer, and the threshold voltage shift amount of the second active layer of the second thin film transistor is less than or equal to the threshold voltage shift amount of the first active layer of the first thin film transistor. 2. The display panel according to claim 1, wherein the electron mobility of the first active layer of the first thin film transistor is 1.5 times or more of the electron mobility of the second active layer of the second thin film transistor. The display panel according to claim 1, wherein the electron mobility of the first active layer of the first thin film transistor is 20 cm ² /(V·s) or more. The display panel according to claim 1, wherein the threshold voltage shift amount of the second active layer of the second thin film transistor is 1 volt or less. The display panel of claim 1, wherein the material of the first active layer of the first thin film transistor includes indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof. 2. The display panel according to claim 1, wherein the material of the second active layer of the second thin film transistor includes a metal oxide doped with a rare earth metal element or a fluorine-based compound. a data line electrically connected to the first source of the first thin film transistor;
a scanning line electrically connected to the first gate of the first thin film transistor;
2. The light emitting unit according to claim 1, further comprising a first electrode and a second electrode opposite to the first electrode, the first electrode being electrically connected to the second source of the second thin film transistor. Display panel as described. a first electrode plate; and a second electrode plate facing the first electrode plate, the first electrode plate being electrically connected to the first drain of the first thin film transistor and the second gate of the second thin film transistor. 8. The display panel of claim 7, further comprising a capacitor electrically connected to the second source of the second thin film transistor and the light emitting unit. The display panel according to claim 1, further comprising a light blocking layer provided under the second thin film transistor. The first thin film transistor further includes a third active layer provided in a stacked manner with the first active layer, and non-channel regions at both ends of the third active layer correspond to non-channel regions at both ends of the first active layer, respectively. The display panel according to claim 1, wherein the display panel is electrically connected. 11. The display panel according to claim 10, wherein the average electron mobility of the first active layer and the third active layer of the first thin film transistor is greater than or equal to the electron mobility of the second active layer of the second thin film transistor. 12. The average electron mobility of the first active layer and the third active layer of the first thin film transistor is 1.5 times or more the electron mobility of the second active layer of the second thin film transistor. Display panel as described. The display panel according to claim 11, wherein the average electron mobility of the first active layer and the third active layer of the first thin film transistor is 20 cm ² /(V·s) or more. 11. The display panel according to claim 10, wherein the first active layer of the first thin film transistor is made of the same material as the second active layer of the second thin film transistor. The display panel according to claim 10, wherein the first active layer of the first thin film transistor and the second active layer of the second thin film transistor are provided by the same manufacturing process. 11. The display panel of claim 10, wherein the material of the third active layer of the first thin film transistor includes indium oxide, gallium oxide, zinc oxide, tin oxide, and combinations thereof. 17. The display panel according to claim 16, wherein in the first thin film transistor, the material of the first active layer is different from the material of the third active layer. a data line electrically connected to the first source of the first thin film transistor;
a scanning line electrically connected to the first gate of the first thin film transistor;
11. The light emitting unit according to claim 10, further comprising a first electrode and a second electrode facing the first electrode, the first electrode being electrically connected to the second source of the second thin film transistor. Display panel as described. a first electrode plate; and a second electrode plate facing the first electrode plate, the first electrode plate being electrically connected to the first drain of the first thin film transistor and the second gate of the second thin film transistor. The display panel of claim 18, further comprising a capacitor electrically connected to the second source of the second thin film transistor and the light emitting unit. The display panel according to claim 10, further comprising a light blocking layer provided under the second thin film transistor.

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