JP2024121394A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2024121394A
JP2024121394A JP2023028476A JP2023028476A JP2024121394A JP 2024121394 A JP2024121394 A JP 2024121394A JP 2023028476 A JP2023028476 A JP 2023028476A JP 2023028476 A JP2023028476 A JP 2023028476A JP 2024121394 A JP2024121394 A JP 2024121394A
Authority
JP
Japan
Prior art keywords
layer
insulating layer
oxide semiconductor
gate insulating
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023028476A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024121394A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
真里奈 望月
Marina Mochizuki
涼 小野寺
Ryo Onodera
将弘 渡部
Masahiro Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2023028476A priority Critical patent/JP2024121394A/ja
Priority to US18/435,094 priority patent/US20240290861A1/en
Priority to KR1020240018734A priority patent/KR102898869B1/ko
Priority to CN202410201026.6A priority patent/CN118553770A/zh
Priority to TW113106741A priority patent/TW202435432A/zh
Publication of JP2024121394A publication Critical patent/JP2024121394A/ja
Publication of JP2024121394A5 publication Critical patent/JP2024121394A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2023028476A 2023-02-27 2023-02-27 半導体装置 Pending JP2024121394A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2023028476A JP2024121394A (ja) 2023-02-27 2023-02-27 半導体装置
US18/435,094 US20240290861A1 (en) 2023-02-27 2024-02-07 Semiconductor device
KR1020240018734A KR102898869B1 (ko) 2023-02-27 2024-02-07 반도체 장치
CN202410201026.6A CN118553770A (zh) 2023-02-27 2024-02-23 半导体装置
TW113106741A TW202435432A (zh) 2023-02-27 2024-02-26 半導體裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023028476A JP2024121394A (ja) 2023-02-27 2023-02-27 半導体装置

Publications (2)

Publication Number Publication Date
JP2024121394A true JP2024121394A (ja) 2024-09-06
JP2024121394A5 JP2024121394A5 (https=) 2026-02-20

Family

ID=92451311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023028476A Pending JP2024121394A (ja) 2023-02-27 2023-02-27 半導体装置

Country Status (5)

Country Link
US (1) US20240290861A1 (https=)
JP (1) JP2024121394A (https=)
KR (1) KR102898869B1 (https=)
CN (1) CN118553770A (https=)
TW (1) TW202435432A (https=)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9142568B2 (en) * 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2880690B1 (en) 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20150065020A (ko) * 2013-12-04 2015-06-12 주성엔지니어링(주) 게이트 절연막 및 그를 이용한 박막 트랜지스터
CN109121438B (zh) 2016-02-12 2022-02-18 株式会社半导体能源研究所 半导体装置以及包括该半导体装置的显示装置
KR20210010333A (ko) * 2019-07-19 2021-01-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Also Published As

Publication number Publication date
CN118553770A (zh) 2024-08-27
KR102898869B1 (ko) 2025-12-12
KR20240133589A (ko) 2024-09-04
US20240290861A1 (en) 2024-08-29
TW202435432A (zh) 2024-09-01

Similar Documents

Publication Publication Date Title
KR102801339B1 (ko) 반도체 장치
KR102898869B1 (ko) 반도체 장치
TWI915668B (zh) 半導體裝置
KR102733354B1 (ko) 반도체 장치의 제조 방법
US20240312999A1 (en) Semiconductor device
KR102870475B1 (ko) 반도체 장치
US12610624B2 (en) Method for manufacturing semiconductor device
US20250015189A1 (en) Semiconductor device
WO2023189493A1 (ja) 半導体装置
WO2024190449A1 (ja) 半導体装置
JP2023149086A (ja) 半導体装置の製造方法
JP2024040960A5 (https=)
WO2023223657A1 (ja) 半導体装置の製造方法
JP2024145782A (ja) 半導体装置及びその製造方法
JP2024139916A (ja) 半導体装置、表示装置、及び半導体装置の製造方法
JP2024139917A (ja) 半導体装置及び表示装置
JP2024145744A (ja) 半導体装置及び半導体装置の作製方法
JP2025058431A (ja) 半導体装置およびその製造方法
WO2023189491A1 (ja) 半導体装置
WO2023228616A1 (ja) 半導体装置
WO2023189489A1 (ja) 半導体装置
WO2023189549A1 (ja) 半導体装置及び半導体装置の製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20250609

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260212