JP2024078703A - 発光装置、三次元造形装置、およびヘッドマウントディスプレイ - Google Patents
発光装置、三次元造形装置、およびヘッドマウントディスプレイ Download PDFInfo
- Publication number
- JP2024078703A JP2024078703A JP2022191198A JP2022191198A JP2024078703A JP 2024078703 A JP2024078703 A JP 2024078703A JP 2022191198 A JP2022191198 A JP 2022191198A JP 2022191198 A JP2022191198 A JP 2022191198A JP 2024078703 A JP2024078703 A JP 2024078703A
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- layer
- light
- semiconductor layer
- multilayer mirror
- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022191198A JP2024078703A (ja) | 2022-11-30 | 2022-11-30 | 発光装置、三次元造形装置、およびヘッドマウントディスプレイ |
| US18/519,070 US20240178637A1 (en) | 2022-11-30 | 2023-11-27 | Light-emitting device, three-dimensional shaping apparatus, and head-mounted display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022191198A JP2024078703A (ja) | 2022-11-30 | 2022-11-30 | 発光装置、三次元造形装置、およびヘッドマウントディスプレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024078703A true JP2024078703A (ja) | 2024-06-11 |
| JP2024078703A5 JP2024078703A5 (enExample) | 2025-09-25 |
Family
ID=91191102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022191198A Pending JP2024078703A (ja) | 2022-11-30 | 2022-11-30 | 発光装置、三次元造形装置、およびヘッドマウントディスプレイ |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20240178637A1 (enExample) |
| JP (1) | JP2024078703A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026140501A1 (ja) * | 2024-12-25 | 2026-07-02 | ソニーグループ株式会社 | 発光装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121010A (ja) * | 2004-10-25 | 2006-05-11 | Sumitomo Electric Ind Ltd | 面発光レーザ素子および面発光レーザアレイ |
| CN112436380A (zh) * | 2020-11-19 | 2021-03-02 | 清华大学 | 基于范德华外延的垂直腔面发射激光器及其制作方法 |
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2022
- 2022-11-30 JP JP2022191198A patent/JP2024078703A/ja active Pending
-
2023
- 2023-11-27 US US18/519,070 patent/US20240178637A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006121010A (ja) * | 2004-10-25 | 2006-05-11 | Sumitomo Electric Ind Ltd | 面発光レーザ素子および面発光レーザアレイ |
| CN112436380A (zh) * | 2020-11-19 | 2021-03-02 | 清华大学 | 基于范德华外延的垂直腔面发射激光器及其制作方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026140501A1 (ja) * | 2024-12-25 | 2026-07-02 | ソニーグループ株式会社 | 発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240178637A1 (en) | 2024-05-30 |
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