JP2024074156A - Semiconductor device with heat dissipation member and method for manufacturing the same - Google Patents

Abstract

To provide a semiconductor device with a heat dissipation member and a method for manufacturing the same, which can efficiently cool a semiconductor element.SOLUTION: A semiconductor device with a heat dissipation member includes a semiconductor element, a lead portion electrically connected to the semiconductor element, a sealing resin that seals the semiconductor element and the lead portion, a heat dissipation member thermally connected to the semiconductor element, a heat dissipation member having a first outer surface located on the semiconductor element side and a second outer surface located on the opposite side to the first outer surface, and at least a portion of the second outer surface of the heat dissipation member is exposed to the outside of the sealing resin.SELECTED DRAWING: Figure 4

Description

This disclosure relates to a semiconductor device with a heat dissipation component and a method for manufacturing a semiconductor device with a heat dissipation component.

In recent years, there has been a demand for smaller and thinner semiconductor devices mounted on substrates. To meet this demand, various types of so-called QFN (Quad Flat Non-lead) type semiconductor devices have been proposed, which use a lead frame, encapsulate the semiconductor element mounted on the mounting surface with sealing resin, and expose a portion of the leads on the back side.

In addition, semiconductor devices with heat dissipation members are known, in which a heat dissipation member is attached to the semiconductor device to cool the heat of the semiconductor element.

International Publication No. 2021/177093

In recent years, the amount of heat generated by semiconductor elements has been increasing due to the increasing functionality and density of semiconductor elements. However, in conventional semiconductor devices, the semiconductor elements are sealed with a sealing resin, making it difficult to release heat from the semiconductor elements to the outside, and there was a risk of heat building up inside.

Taking these points into consideration, the present disclosure aims to provide a semiconductor device with a heat dissipation component that can efficiently cool a semiconductor element and a method for manufacturing a semiconductor device with a heat dissipation component.

A first aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
A semiconductor device with a heat dissipation component,
A semiconductor element;
a lead portion electrically connected to the semiconductor element;
a sealing resin that seals the semiconductor element and the lead portion;
a first heat dissipation member thermally connected to the semiconductor element, the first heat dissipation member having a first outer surface located on the semiconductor element side and a second outer surface located on the opposite side to the first outer surface;
At least a portion of the second outer surface of the first heat dissipation member is exposed to the outside of the sealing resin.

A second aspect of the present disclosure is a semiconductor device with a heat dissipation component according to the first aspect,
The first heat dissipation member may have a planar area larger than a planar area of the semiconductor element.

A third aspect of the present disclosure is a semiconductor device with a heat dissipation component according to the first aspect or the second aspect,
At least a portion of the first heat dissipation member may be embedded in the sealing resin.

A fourth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to the third aspect,
A portion of the first heat dissipation member embedded in the sealing resin may be in contact with the semiconductor element.

A fifth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to any one of the first to third aspects described above,
A first heat transfer member may be interposed between the semiconductor element and the first heat dissipation member.

A sixth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to any one of the first to fifth aspects described above,
The first heat dissipation member may include a bent region in which the first heat dissipation member is bent.

A seventh aspect of the present disclosure is the semiconductor device with a heat dissipation component according to the sixth aspect,
the first heat dissipation member includes a first region and a second region separated by the bent region,
the first region of the first heat dissipation member is thermally connected to the semiconductor element;
The second region of the first heat dissipation member may be thermally connected to a mounting board on which the semiconductor device with heat dissipation member is disposed or to a housing that houses the semiconductor device with heat dissipation member.

An eighth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to any one of the first to seventh aspects described above,
The first heat dissipation member may be thermally connected to a mounting board on which the semiconductor device with heat dissipation member is disposed or to a housing that houses the semiconductor device with heat dissipation member via a second heat transfer member.

A ninth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to any one of the first to eighth aspects described above,
The semiconductor device with a heat dissipation component is disposed on a mounting substrate,
the mounting substrate has a first substrate surface located on the semiconductor element side and a second substrate surface located on the opposite side to the first substrate surface,
A second heat dissipation member different from the first heat dissipation member may be disposed on the second board surface of the mounting board.

A tenth aspect of the present disclosure is a semiconductor device with a heat dissipation component according to any one of the first to ninth aspects described above,
The first heat dissipation member may be a vapor chamber.

An eleventh aspect of the present disclosure is a method for manufacturing a semiconductor device comprising:
A method for manufacturing a semiconductor device with a heat dissipation component, comprising the steps of:
preparing a lead frame having a lead portion and a heat dissipation member having a first outer surface and a second outer surface located on an opposite side to the first outer surface;
placing a semiconductor element on the lead frame;
a step of electrically connecting the semiconductor element and the lead portion;
a step of sealing the semiconductor element and the lead portion with a sealing resin;
cutting the lead frame into individual semiconductor devices;
and thermally connecting the heat dissipation member to the semiconductor element.
the first outer surface of the heat dissipation member is located on the semiconductor element side,
In the method for manufacturing a semiconductor device with a heat dissipation component, at least a portion of the second outer surface of the heat dissipation component is exposed to the outside of the sealing resin.

This disclosure allows semiconductor elements to be cooled efficiently.

FIG. 1 is a plan view showing an example of a lead frame according to the first embodiment. FIG. 2 is a cross-sectional view taken along line II-II of FIG. FIG. 3 is a plan view showing an example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. FIG. 5 is a plan view of the vapor chamber shown in FIG. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. FIG. 7 is a plan view of the main body sheet shown in FIG. 8A to 8C are cross-sectional views showing an example of a method for manufacturing the lead frame according to the first embodiment. 9A to 9C are cross-sectional views showing an example of a method for manufacturing the vapor chamber according to the first embodiment. FIG. 10A is a cross-sectional view showing an example of a method for manufacturing a semiconductor device with a heat dissipation component according to the first embodiment. FIG. 10B is a cross-sectional view showing an example of a method for manufacturing the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 11 is a cross-sectional view showing another example of the method for manufacturing the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 12 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 13 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 14 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 15 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 16 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 17 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 18 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 19 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 20 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 21 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 22 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 23 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 24 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 25 is a plan view showing an example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 26 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 27 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 28 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 29 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 30 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 31 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 32 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 33 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 34 is a plan view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 35 is an example of a cross-sectional view of FIG. FIG. 36 is another example of the cross-sectional view of FIG. FIG. 37 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 38 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 39 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 40 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the first embodiment. FIG. 41 is a cross-sectional view showing an example of a semiconductor device with a heat dissipation component according to the second embodiment. FIG. 42 is an example of a plan view of FIG. FIG. 43 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device with a heat dissipation component according to the second embodiment. FIG. 44 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the second embodiment. FIG. 45 is another example of the plan view of FIG. FIG. 46 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the second embodiment. FIG. 47 is an example of a plan view of FIG. FIG. 48 is a cross-sectional view showing another example of the semiconductor device with a heat dissipation component according to the second embodiment. FIG. 49 is a cross-sectional view showing an example of a method for manufacturing a semiconductor device with a heat dissipation component according to the third embodiment. FIG. 50 is a cross-sectional view showing another example of the method for manufacturing a semiconductor device with a heat dissipation component according to the third embodiment.

(First embodiment)
Hereinafter, the first embodiment will be described with reference to Figures 1 to 11. In each figure, the same parts are denoted by the same reference numerals, and detailed description thereof may be omitted.

First, using Figures 1 and 2, we will explain the outline of the lead frame for manufacturing the semiconductor device with heat dissipation component (hereinafter simply referred to as the semiconductor device) according to this embodiment.

The lead frame 10 shown in Figures 1 and 2 is a component used in fabricating the semiconductor device 20 shown in Figures 3 and 4. The lead frame 10 has multiple package areas 10a arranged in multiple rows and columns (in a matrix). Note that Figure 1 shows only a portion of one package area 10a.

In this specification, "inside" and "inner side" refer to the side of each package area 10a facing the center of the die pad 11, and "outside" and "outer side" refer to the side of each package area 10a facing away from the center of the die pad 11 (the connecting bar 13 side). Furthermore, "front side" refers to the surface on which the semiconductor element 21 is mounted, and "back side" refers to the surface opposite to the "front side" that is connected to the mounting board 5. Note that "inside", "inner side", "outer side", and "outer side" used in the description of the semiconductor device 20 described below also refer to the same sides as those terms used in the description of the lead frame 10. Furthermore, "front side" and "back side" used in the description of the semiconductor device 20 also refer to the surface facing in the same direction as "front side" and "back side" used in the description of the lead frame 10.

In addition, in this specification, half-etching refers to etching the material to be etched partway in the thickness direction. The thickness of the material to be etched after half-etching is, for example, 30% to 70%, preferably 40% to 60%, of the thickness of the material to be etched before half-etching.

1 and 2, the lead frame 10 has a die pad 11 and a plurality of lead portions 12. A semiconductor element 21, which will be described later, is placed on the die pad 11. The planar shape of the die pad 11 may be rectangular. For example, as shown in FIG. 1, the planar shape of the die pad 11 may be square. Each lead portion 12 is disposed around the die pad 11. Each lead portion 12 is electrically connected to the semiconductor element 21. Each lead portion 12 electrically connects the semiconductor element 21 to the mounting substrate 5 (see FIG. 4). As shown in FIG. 1, each lead portion 12 may be formed in an elongated shape.

As described above, the lead frame 10 has multiple package areas 10a. The package areas 10a correspond to the semiconductor devices 20 described below, and are areas located inside the imaginary lines in FIG. 1. In this embodiment, the lead frame 10 includes multiple package areas 10a, but is not limited to this and may include only one package area 10a.

The multiple package regions 10a are connected to each other via connecting bars 13. The connecting bars 13 are members that support the die pad 11 and the lead portions 12. The connecting bars 13 extend along the X and Y directions, respectively. Here, the X and Y directions are two directions that are parallel to each side of the die pad 11 within the plane of the lead frame 10. The X and Y directions are orthogonal to each other. The Z direction is a direction perpendicular to both the X and Y directions. In this specification, a plan view means that the semiconductor device 20 or a member that constitutes the semiconductor device 20 is viewed along the Z direction.

A hanging lead 14 is connected to each of the four corners of the die pad 11. The die pad 11 is connected and supported to the connecting bar 13 via these four hanging leads 14. Each hanging lead 14 may be thinned from the back surface side over its entire area by half etching. However, this is not limited to this, and only a portion of the hanging lead 14 may be thinned from the back surface side, or the entire hanging lead 14 may not be thinned.

The connecting bar 13 is disposed around the package area 10a and outside the package area 10a. The connecting bar 13 has a long, thin rod shape. A plurality of lead portions 12 are connected to the connecting bar 13 at intervals along the longitudinal direction. The connecting bar 13 may have the same thickness as the metal substrate (metal substrate S described below) before processing without being thinned (half-etched).

2, the die pad 11 has a die pad thick portion 11a and a die pad thin portion 11b. The die pad thick portion 11a is located in the center of the die pad 11. The die pad thin portion 11b is formed around the entire periphery of the die pad thick portion 11a. The die pad thick portion 11a is not half-etched and has the same thickness as the metal substrate (metal substrate S described later) before processing. The thickness of the die pad thick portion 11a depends on the configuration of the semiconductor device 20, but may be, for example, 80 μm or more and 200 μm or less. On the other hand, the die pad thin portion 11b is formed thin from the back side by half etching. By providing such a die pad thin portion 11b, it is possible to make the die pad 11 less likely to come off from the sealing resin 23 described later.

As described below, each lead portion 12 is electrically connected to the semiconductor element 21 via a bonding wire 22. A space is provided between each lead portion 12 and the die pad 11. Each lead portion 12 extends inward from the connecting bar 13. The shapes of the multiple lead portions 12 may be the same as each other. However, this is not limited to the above, and the shapes of the multiple lead portions 12 may be different from each other.

As described above, the multiple lead portions 12 are arranged at intervals around the die pad 11 along the longitudinal direction of the connecting bar 13. Adjacent lead portions 12 are electrically insulated from each other after the semiconductor device 20 is manufactured. Each lead portion 12 is also electrically insulated from the die pad 11 after the semiconductor device 20 is manufactured. An external terminal 17 that is electrically connected to the mounting substrate 5 (see FIG. 4) is formed on the back surface of each lead portion 12. Each external terminal 17 is exposed to the outside from the semiconductor device 20 after the semiconductor device 20 is manufactured.

In this case, the external terminals 17 may be arranged in a row along each side of the die pad 11 in a plan view. Each lead portion 12 may have a thinned portion 12a formed at the end (inner end) on the die pad 11 side by half etching from the back surface side. In addition, an internal terminal 15 is formed on the surface of each lead portion 12. The internal terminal 15 is a portion that is electrically connected to the semiconductor element 21 via a bonding wire 22, as described below. The internal terminal 15 may be provided with a plated portion to improve adhesion with the bonding wire 22.

The base end of each lead portion 12 is connected to a connecting bar 13. Each lead portion 12 extends perpendicular to the longitudinal direction of the connecting bar 13 to which the lead portion 12 is connected. However, this is not limited to this, and a part or all of each lead portion 12 may extend at an angle to the connecting bar 13.

The lead frame 10 described above may be made of a metal material such as copper, a copper alloy, or alloy 42 (a 42% Ni-Fe alloy). The thickness of the lead frame 10 may be, for example, 80 μm or more and 200 μm or less, depending on the configuration of the semiconductor device 20 to be manufactured.

In this embodiment, the lead portions 12 are arranged along all four sides of the die pad 11, but this is not limited thereto, and they may be arranged, for example, along only two opposing sides of the die pad 11.

Next, a semiconductor device with a heat dissipation component (semiconductor device) according to this embodiment will be described with reference to Figures 3 and 4. The semiconductor device according to this embodiment is also called a semiconductor package. As shown in Figure 4, the semiconductor device 20 is disposed on a mounting substrate 5 and is electrically connected to the mounting substrate 5.

As shown in Figures 3 and 4, the semiconductor device 20 includes a die pad 11, multiple leads 12, a semiconductor element 21, multiple bonding wires 22, a sealing resin 23, a first heat transfer member 25, and a vapor chamber 30 (an example of a heat dissipation member). The die pad 11, the leads 12, the semiconductor element 21, the bonding wires 22, and the first heat transfer member 25 are sealed with the sealing resin 23. Note that in Figure 3, the portion of the sealing resin 23 that is located on the surface side of the die pad 11 and the leads 12 is omitted. Also, in Figure 3, the vapor chamber 30 is omitted.

The die pad 11 and the lead portion 12 are made from the lead frame 10 described above. As shown in FIG. 4, the back surface 11c of the die pad 11 may be exposed to the outside of the sealing resin 23. The back surface 11c of the die pad 11 may be located on the same plane as the back surface 23a of the sealing resin 23. The inner part of each lead portion 12 may be located within the sealing resin 23 in a plan view, and the outer part of each lead portion 12 may be located outside the sealing resin 23 in a plan view. That is, the inner part of the lead portion 12 may be embedded in the sealing resin 23. On the other hand, the outer part of the lead portion 12 may be exposed to the outside of the sealing resin 23. In addition, the back surface (external terminal 17) of the lead portion 12 may be exposed to the outside of the sealing resin 23. The back surface of the lead portion 12 may be located on the same plane as the back surface 11c of the die pad 11. In addition, the back surface of the lead portion 12 may be located on the same plane as the back surface 23a of the sealing resin 23.

The rest of the configuration of the die pad 11 and the lead portion 12 is the same as that shown in Figures 1 and 2 above, except for the areas not included in the semiconductor device 20, so a repeated explanation will be omitted.

The semiconductor element 21 is placed on the die pad 11. As the semiconductor element 21, various commonly used semiconductor elements can be used. As the semiconductor element 21, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, etc. can be used. The semiconductor element 21 has a plurality of electrodes 21a to which each bonding wire 22 is attached. The semiconductor element 21 may be fixed to the surface of the die pad 11 by an adhesive such as die bonding paste.

Each bonding wire 22 electrically connects each lead 12 to the semiconductor element 21. One end of each bonding wire 22 is connected to the electrode 21a of the semiconductor element 21, and the other end is connected to the internal terminal 15 of each lead 12. The internal terminal 15 may be provided with a plated portion to improve adhesion with the bonding wire 22. Each bonding wire 22 may be made of a metal material with good conductivity, such as gold or copper.

The sealing resin 23 seals the die pad 11, the lead portion 12, the semiconductor element 21, and the bonding wires 22. The sealing resin 23 may be a thermosetting resin such as a silicone resin or an epoxy resin, or a thermoplastic resin such as a PPS resin. The thickness (dimension in the Z direction) of the sealing resin 23 may be, for example, 300 μm or more and 1200 μm or less. The planar shape of the sealing resin 23 may be a square or rectangular shape. In this case, the length of one side of the sealing resin 23 may be, for example, 6 mm or more and 16 mm or less.

The first heat transfer member 25 is disposed between the semiconductor element 21 and the vapor chamber 30 described later. That is, the first heat transfer member 25 is interposed between the semiconductor element 21 and the vapor chamber 30. The first heat transfer member 25 may be embedded in the sealing resin 23. The first heat transfer member 25 is disposed on the semiconductor element 21. The first heat transfer member 25 is disposed inside the outer edge of the semiconductor element 21 in a plan view, and the planar area of the first heat transfer member 25 may be smaller than the planar area of the semiconductor element 21. The first heat transfer member 25 has a first heat transfer surface 25a and a second heat transfer surface 25b. The first heat transfer surface 25a is located on the side of the semiconductor element 21. The second heat transfer surface 25b is located on the opposite side to the first heat transfer surface 25a and on the side of the vapor chamber 30 described later. The first heat transfer surface 25a may be in contact with the semiconductor element 21. The second heat transfer surface 25b may be in contact with the first outer surface 30a of the vapor chamber 30 described below. In this specification, the planar area refers to the area of the member in a planar view.

The first heat transfer member 25 has the role of transferring heat from the semiconductor element 21 to the vapor chamber 30. The first heat transfer member 25 is made of a material with high thermal conductivity. The first heat transfer member 25 may be made of, for example, a metal material. Examples of metal materials include iron, nickel, aluminum, gold, copper, and silver. The first heat transfer member 25 may also be made of, for example, a carbon material. Examples of carbon materials include graphite. The thickness of the first heat transfer member 25 may be, for example, 10 μm or more and 2000 μm or less.

The vapor chamber 30 is configured to be able to cool the semiconductor element 21. That is, the vapor chamber 30 dissipates heat from the semiconductor element 21 to the outside. The vapor chamber 30 is thermally connected to the semiconductor element 21. In this embodiment, a first heat transfer member 25 is interposed between the vapor chamber 30 and the semiconductor element 21. Therefore, the vapor chamber 30 can cool the heat of the semiconductor element 21 that is transferred through the first heat transfer member 25. In FIG. 4, the arrows indicate the flow of heat.

The vapor chamber 30 has a first outer surface 30a and a second outer surface 30b. The first outer surface 30a is located on the semiconductor element 21 side. The first outer surface 30a may be in contact with the second heat transfer surface 25b of the first heat transfer member 25. The second outer surface 30b is located on the opposite side to the first outer surface 30a. At least a portion of the second outer surface 30b is exposed to the outside of the sealing resin 23. As shown in FIG. 4, the entire second outer surface 30b may be exposed to the outside of the sealing resin 23.

The vapor chamber 30 may cover the first heat transfer member 25 in a plan view. The plan area of the vapor chamber 30 may be larger than the plan area of the first heat transfer member 25. The vapor chamber 30 may cover the semiconductor element 21 in a plan view. The plan area of the vapor chamber 30 may be larger than the plan area of the semiconductor element 21. The vapor chamber 30 may cover the sealing resin 23 in a plan view. The plan area of the vapor chamber 30 may be larger than the plan area of the sealing resin 23.

Next, an example of the configuration of the vapor chamber 30 will be described in more detail using Figures 5 to 7.

The vapor chamber 30 is filled with working fluids 31a and 31b. The vapor chamber 30 has a sealed space 32 in which the working fluids 31a and 31b are sealed, and is configured to cool an object by repeatedly changing the phase of the working fluids 31a and 31b in the sealed space 32. Examples of the working fluids 31a and 31b include pure water, ethanol, methanol, acetone, etc., and mixtures thereof.

As shown in Figures 5 and 6, the vapor chamber 30 may include a first sheet 40, a second sheet 50, and a main body sheet 60 (wick sheet) interposed between the first sheet 40 and the second sheet 50. In the illustrated example, the vapor chamber 30 is configured by stacking the first sheet 40, the main body sheet 60, and the second sheet 50 in this order.

The vapor chamber 30 may be formed in a thin flat plate shape. As shown in FIG. 5, the planar shape of the vapor chamber 30 may be rectangular. As shown in FIG. 5, the planar shape of the vapor chamber 30 may be rectangular with the longitudinal direction in the X direction and the transverse direction in the Y direction. However, this is not limited to this, and the planar shape of the vapor chamber 30 may be any shape, such as a square shape, a circular shape, an elliptical shape, an L-shape, a T-shape, a U-shape, etc. The first sheet 40, the second sheet 50, and the main body sheet 60 constituting the vapor chamber 30 described above may also have a planar shape similar to the planar shape of the vapor chamber 30 shown in FIG. 5.

As shown in FIG. 6, the first sheet 40 has a first sheet outer surface 40a and a first sheet inner surface 40b. The first sheet outer surface 40a is located on the opposite side to the main body sheet 60. The first sheet inner surface 40b is located on the opposite side to the first sheet outer surface 40a, on the side of the main body sheet 60. The first sheet outer surface 40a constitutes the first outer surface 30a of the vapor chamber 30 described above. The first sheet 40 may be formed flat overall, or the first sheet 40 may have a constant thickness overall. The thickness of the first sheet 40 may be, for example, 6 μm or more and 200 μm or less.

As shown in FIG. 6, the second sheet 50 has a second sheet inner surface 50a and a second sheet outer surface 50b. The second sheet inner surface 50a is located on the side of the main sheet 60. The second sheet outer surface 50b is located on the opposite side of the second sheet inner surface 50a and the opposite side of the main sheet 60. The second sheet outer surface 50b constitutes the second outer surface 30b of the vapor chamber 30 described above. The second sheet 50 may be formed flat overall, or the second sheet 50 may have a constant thickness overall. The thickness of the second sheet 50 may be set to be the same as the thickness of the first sheet 40. The thickness of the second sheet 50 may be different from the thickness of the first sheet 40.

As shown in FIG. 6, the main body sheet 60 has a first main body surface 60a and a second main body surface 60b. The first main body surface 60a is located on the side of the first sheet 40. The second main body surface 60b is located on the side of the second sheet 50, opposite the first main body surface 60a. The first main body surface 60a may be joined to the first sheet inner surface 40b by thermocompression bonding. The second main body surface 60b may be joined to the second sheet inner surface 50a by thermocompression bonding. Examples of joining by thermocompression bonding include, for example, diffusion bonding and brazing.

6 and 7, the main body sheet 60 may have a frame portion 62 and a plurality of land portions 63. The frame portion 62 may be formed in a rectangular frame shape in a plan view. Each land portion 63 may be disposed within the frame portion 62. Each land portion 63 may extend in the X direction. Each land portion 63 may be formed in an elongated rectangular shape in a plan view. Each land portion 63 may be disposed parallel to each other and spaced apart in the Y direction. Although not shown, a plurality of support portions may be provided to support the land portions 63 on the frame portion 62.

6 and 7, a steam flow path 65 may be provided between the frame portion 62 and each land portion 63, and between adjacent land portions 63. The steam flow path 65 is a flow path through which the working steam 31a, which is the vapor of the working fluid, mainly passes. The working liquid 31b, which is the liquid of the working fluid, may also pass through the steam flow path 65. As shown in FIG. 6, the steam flow path 65 may penetrate the main body sheet 60 from the first main body surface 60a to the second main body surface 60b. As shown in FIG. 7, the steam flow path 65 may mainly extend in the X direction. The steam flow path 65 has a relatively large flow path cross-sectional area so that the working steam 31a passes through. The width (minimum width) of the steam flow path 65 may be, for example, 400 μm or more and 1600 μm or less. As shown in FIG. 6, the cross-sectional shape of the steam flow path 65 may be an hourglass shape formed so that the contour line protrudes inward. However, this is not limited to this, and the cross-sectional shape of the steam flow path 65 can be any shape, such as a rectangular shape, a trapezoidal shape, or a barrel shape. Such a steam flow path 65 constitutes a part of the sealed space 32 described above.

6 and 7, a liquid flow path 66 may be provided on the first main body surface 60a of each land portion 63 of the main body sheet 60. The liquid flow path 66 is a groove-shaped flow path through which the working liquid 31b mainly passes. The working steam 31a may pass through the liquid flow path 66. The liquid flow path 66 is connected to the above-mentioned steam flow path 65. The liquid flow path 66 is configured as a capillary structure (wick) for transporting the working liquid 31b. The liquid flow path 66 may be formed over the entire first main body surface 60a of each land portion 63. As shown in FIG. 7, the liquid flow path 66 may mainly extend in the X direction. The liquid flow path 66 has a flow path cross-sectional area smaller than that of the steam flow path 65 so that the working liquid 31b flows by capillary action. The width of the liquid flow path 66 may be, for example, 5 μm or more and 150 μm or less. The depth of the liquid flow path 66 may be, for example, 3 μm or more and 150 μm or less. In the illustrated example, the liquid flow path 66 is not provided on the second main body surface 60b of each land portion 63, but the liquid flow path 66 may be provided on the second main body surface 60b of each land portion 63. Such a liquid flow path 66 constitutes a part of the sealed space 32 described above.

The thickness of the main body sheet 60 may be, for example, 50 μm or more and 400 μm or less. The thickness of the vapor chamber 30 as a whole may be, for example, 100 μm or more and 1000 μm or less. The first sheet 40, the second sheet 50, and the main body sheet 60 are made of a material with high thermal conductivity. The first sheet 40, the second sheet 50, and the main body sheet 60 may be made of a metal material such as copper or a copper alloy.

When the vapor chamber 30 receives heat from the object to be cooled, the working fluid 31b in the sealed space 32 evaporates in the area receiving the heat, generating working vapor 31a. The generated working vapor 31a diffuses in the vapor flow path 65 and is transported to a position away from the object to be cooled (see the solid arrow in FIG. 7). The working vapor 31a is then cooled mainly by dissipating heat to the second sheet 50. The heat received by the second sheet 50 from the working vapor 31a is transferred to the outside air. The working vapor 31a condenses due to heat dissipation, generating working fluid 31b. The generated working fluid 31b enters the liquid flow path 66 and is transported toward the side of the object to be cooled by capillary action (see the dashed arrow in FIG. 7). In this way, the working fluids 31a and 31b circulate within the sealed space 32 while repeatedly changing phases, that is, evaporating and condensing, transporting and releasing the heat of the object to be cooled. In this way, the object to be cooled is cooled by the vapor chamber 30.

Although an example of a vapor chamber has been described here, the vapor chamber is not limited to the above-mentioned configuration and can have any other configuration. For example, the above-mentioned vapor chamber is composed of three layers, a first sheet, a second sheet, and a main body sheet, but the vapor chamber may be composed of two layers, a first sheet and a main body sheet. In this case, the vapor flow path and the liquid flow path may be formed in either one of the sheets, or in both sheets, and the internal configuration is arbitrary. When the vapor flow path is formed in either one of the sheets, the liquid flow path may be formed in the same sheet, or in the other sheet.

For example, the liquid flow path of the vapor chamber described above is configured as a groove-shaped flow path, but the liquid flow path may be configured as a wick member. The wick member may be formed of a metal mesh, a porous sintered body, a nonwoven fabric, or the like, as long as it is a material that exerts capillary action. When the wick member is formed of a metal mesh, the metal mesh may be formed by shaping copper wire or stainless steel wire into a plain weave, twill weave, plain tatami weave, twill tatami weave, or the like.

For example, while the main body sheet of the vapor chamber described above is composed of one sheet, the main body sheet may be composed of two or more sheets. In this case, the vapor chamber may be composed of four or more layers, including the first and second sheets. In this case, the configuration of the vapor flow path and the liquid flow path is also arbitrary.

In addition, when bending the vapor chamber as described below (see Figures 14 to 22, etc.), a vapor chamber made up of three or more layers, including a first sheet, a second sheet, and one or more main body sheets, is easier to bend and is more preferable.

Furthermore, although a vapor chamber is given here as an example of a heat dissipation member, the heat dissipation member is not limited to a vapor chamber. For example, a heat sink with multiple fins on its outer surface may be used as the heat dissipation member. Also, for example, a heat pipe, a graphite sheet, or a metal plate such as copper, aluminum, or SUS may be used as the heat dissipation member. Note that a vapor chamber can be made thinner and lighter than a heat sink or heat pipe, and has a higher thermal conductivity than a graphite sheet or the above-mentioned metal plate, so it is more preferable to use a vapor chamber as the heat dissipation member.

Next, the manufacturing method of the above-mentioned lead frame 10 will be explained using FIG.

First, as shown in FIG. 8(a), a flat metal substrate S is prepared. The metal substrate S may be a substrate made of a metal material such as copper, a copper alloy, or a 42 alloy (a 42% Ni-Fe alloy). Both sides of the metal substrate S may be degreased or cleaned.

Next, as shown in FIG. 8(b), photosensitive resist Ra is applied to both sides of the metal substrate S and then dried. A known photosensitive resist may be used as the photosensitive resist Ra.

Next, as shown in FIG. 8(c), the metal substrate S is exposed through a photomask and developed to form an etching resist layer R having the desired openings Rb.

Next, as shown in FIG. 8(d), the metal substrate S is etched with an etching solution using the etching resist layer R as an etching-resistant film. This forms the outer shapes of the die pad 11 and the lead portion 12. The etching solution may be appropriately selected depending on the material of the metal substrate S used. For example, when copper is used as the metal substrate S, an aqueous solution of ferric chloride may be used as the etching solution, and spray etching may be performed from both sides of the metal substrate S.

Then, as shown in FIG. 8(e), the etching resist layer R is peeled off and removed to obtain the lead frame 10 shown in FIG. 1 and FIG. 2.

Next, the manufacturing method of the vapor chamber 30 described above will be explained with reference to FIG. 9.

First, in a preparation process, the first sheet 40, the second sheet 50, and the main body sheet 60 are prepared. The preparation process may include a process of producing the main body sheet 60. The process of producing the main body sheet 60 may include a material sheet preparation process of preparing a metal material sheet M, and an etching process of etching the metal material sheet M.

In the material sheet preparation process, as shown in FIG. 9(a), a flat metal material sheet M having a first material surface Ma and a second material surface Mb is prepared. A rolled material having a desired thickness may be used as the metal material sheet M.

In the etching process, as shown in FIG. 9(b), the metal material sheet M is etched from the first material surface Ma and the second material surface Mb to form the vapor flow path 65 and the liquid flow path 66. In the etching process, a patterned resist film (not shown) may first be formed on the first material surface Ma and the second material surface Mb of the metal material sheet M by photolithography technology. Then, the first material surface Ma and the second material surface Mb of the metal material sheet M may be etched through the openings in the patterned resist film. As the etching solution, for example, an iron chloride-based etching solution such as an aqueous ferric chloride solution, or a copper chloride-based etching solution such as an aqueous copper chloride solution may be used.

Next, in the temporary fixing process, the first sheet 40, the main body sheet 60, and the second sheet 50 are temporarily fixed. For example, each sheet 40, 50, and 60 may be temporarily fixed by spot welding or laser welding.

Next, in the joining process, the first sheet 40, the main body sheet 60, and the second sheet 50 are joined together by thermocompression bonding. For example, the sheets 40, 50, and 60 may be joined together by diffusion bonding.

Next, in the injection process, the hydraulic fluid 31b is injected into the sealed space 32 from an injection section (not shown).

Then, in the sealing process, the injection portion is closed to seal the sealed space 32. This results in the vapor chamber 30 as shown in Figures 5 to 7.

Next, a method for manufacturing the above-mentioned semiconductor device 20 will be described with reference to Figures 10A and 10B.

First, as a preparation step, the above-mentioned lead frame 10 is prepared as shown in FIG. 10A(a). The lead frame 10 may be manufactured using the above-mentioned method for manufacturing the lead frame 10. Also, as a preparation step, the above-mentioned vapor chamber 30 is prepared. The vapor chamber 30 may be manufactured using the above-mentioned method for manufacturing the vapor chamber 30.

Next, in the element mounting process (die attach process), as shown in FIG. 10A (b), the semiconductor element 21 is mounted on the die pad 11 of the lead frame 10. Here, the semiconductor element 21 may be fixed onto the die pad 11 using an adhesive such as die bonding paste.

Next, as an electrical connection process (wire bonding process), the semiconductor element 21 and the lead portion 12 are electrically connected as shown in FIG. 10A (c). More specifically, each electrode 21a of the semiconductor element 21 and each internal terminal 15 of the lead portion 12 are electrically connected to each other via a bonding wire 22.

Next, as a heat transfer member placement step, a first heat transfer member 25 is placed on the semiconductor element 21 as shown in FIG. 10A (d). Here, the first heat transfer member 25 and the semiconductor element 21 may be joined to each other by a joining material such as solder.

Next, as a resin sealing process, as shown in FIG. 10B(e), the die pad 11, the lead portion 12, the semiconductor element 21, the bonding wire 22, and the first heat transfer member 25 are sealed with the sealing resin 23. Here, the sealing resin 23 may be formed by injection molding or transfer molding a thermosetting resin or a thermoplastic resin onto the lead frame 10. At this time, the lead frame 10 may be placed in a mold (not shown) having cavities corresponding to each sealing resin 23, and the sealing resin 23 may be poured into each cavity. This allows the die pad 11, the lead portion 12, the semiconductor element 21, the bonding wire 22, and the first heat transfer member 25 to be sealed with the sealing resin 23 for each package region 10a.

Next, as a cutting process, as shown in FIG. 10B(f), the lead frame 10 is cut into individual semiconductor devices. That is, by cutting the lead frame 10, the lead frame 10 is separated into individual package regions 10a. At this time, a cutting die (not shown) may be used to punch out and cut the lead frame 10 between each of the semiconductor devices 20. As a result, the portions of each lead portion 12 that are located outside the package region 10a are cut off.

After that, as shown in FIG. 10B(g), as a thermal connection step, the vapor chamber 30 is thermally connected to the semiconductor element 21. Here, the vapor chamber 30 is thermally connected to the semiconductor element 21 so that at least a part of the second outer surface 30b is exposed to the outside of the sealing resin 23. The vapor chamber 30 may be disposed on the first heat transfer member 25 so that the first outer surface 30a is in contact with the second heat transfer surface 25b of the first heat transfer member 25. As a result, the vapor chamber 30 is thermally connected to the semiconductor element 21 via the first heat transfer member 25. The first outer surface 30a of the vapor chamber 30 and the second heat transfer surface 25b of the first heat transfer member 25 may be joined to each other by a joining material such as solder. In addition, the first outer surface 30a of the vapor chamber 30 and the second heat transfer surface 25b of the first heat transfer member 25 may be fixed with a thermally conductive TIM (Thermal Interface Material) sheet, grease, double-sided tape, or the like.

In this manner, a semiconductor device 20 as shown in Figures 3 and 4 can be obtained.

As described above, according to this embodiment, at least a portion of the second outer surface 30b of the vapor chamber 30 that is thermally connected to the semiconductor element 21 is exposed to the outside of the sealing resin 23. This allows the heat of the semiconductor element 21 to be efficiently released to the outside via the vapor chamber 30. This allows the semiconductor element 21 to be efficiently cooled.

In addition, according to this embodiment, the planar area of the vapor chamber 30 is larger than the planar area of the semiconductor element 21. This allows the heat of the semiconductor element 21 to be efficiently absorbed from the first outer surface 30a of the vapor chamber 30, and allows the heat to be efficiently released to the outside from the second outer surface 30b of the vapor chamber 30. This allows the semiconductor element 21 to be efficiently cooled.

In addition, according to this embodiment, the first heat transfer member 25 is interposed between the semiconductor element 21 and the vapor chamber 30. This allows the heat of the semiconductor element 21 in the sealing resin 23 to be transferred to the vapor chamber 30 via the first heat transfer member 25. The vapor chamber 30 can efficiently release the heat to the outside from the second outer surface 30b. Therefore, the semiconductor element 21 in the sealing resin 23 can be efficiently cooled by the vapor chamber 30. In this case, in the manufacture of the semiconductor device 20, as described below, it is not necessary to bend the vapor chamber 30 or embed the vapor chamber 30 in the sealing resin 23. Therefore, it is possible to suppress an increase in the manufacturing process of the semiconductor device 20, and it is possible to suppress an increase in the manufacturing cost of the semiconductor device 20.

In the above-described embodiment, an example has been described in which the first heat transfer member 25 is placed on the semiconductor element 21, the semiconductor element 21 and the first heat transfer member 25 are sealed with the sealing resin 23, and then the vapor chamber 30 is placed on the first heat transfer member 25 in the manufacturing method of the semiconductor device 20 (see FIG. 10A(d) to FIG. 10B(g)). However, this is not limited to this, and the order of these steps is arbitrary as long as the semiconductor device 20 can be manufactured. For example, as shown in FIG. 11(a), the vapor chamber 30 may be placed on the first heat transfer member 25 before sealing with the sealing resin 23. Then, as shown in FIG. 11(b), the semiconductor element 21 and the first heat transfer member 25 may be sealed with the sealing resin 23. Note that the vapor chamber 30 may be placed on the first heat transfer member 25 and bonded thereto before the first heat transfer member 25 is placed on the semiconductor element 21. That is, the first heat transfer member 25 to which the vapor chamber 30 is bonded may be placed on the semiconductor element 21.

In the above-described embodiment, as shown in FIG. 12, another vapor chamber 30' (second heat dissipation member) different from the vapor chamber 30 (first heat dissipation member) may be arranged on the second substrate surface 5b of the mounting substrate 5. In the example shown in FIG. 12, the mounting substrate 5 has a first substrate surface 5a and a second substrate surface 5b. The first substrate surface 5a is located on the side of the semiconductor element 21. The first substrate surface 5a may be in contact with the back surface 11c of the die pad 11 and the back surface (external terminal 17) of the lead portion 12. The second substrate surface 5b is located on the opposite side to the first substrate surface 5a and the opposite side to the semiconductor element 21. Another vapor chamber 30' different from the vapor chamber 30 may be arranged on the second substrate surface 5b of the mounting substrate 5. The other vapor chamber 30' has a first outer surface 30a' and a second outer surface 30b' like the vapor chamber 30 described above. The first outer surface 30a' is located on the side of the mounting substrate 5. The first outer surface 30a' may be in contact with the second substrate surface 5b of the mounting substrate 5. The second outer surface 30b' is located on the opposite side of the first outer surface 30a' and the opposite side of the mounting substrate 5. In this case, the other vapor chamber 30' arranged on the second substrate surface 5b of the mounting substrate 5 can dissipate heat from the mounting substrate 5, and the semiconductor element 21 can be cooled more efficiently.

Furthermore, as shown in FIG. 13, the second outer surface 30b' of the vapor chamber 30' described above may be in contact with the housing 7. The housing 7 is a member that houses the semiconductor device 20 and the mounting board 5. The entire second outer surface 30b' of the vapor chamber 30' may be in contact with the housing 7. The planar area of the vapor chamber 30' may be larger than the planar area of the mounting board 5. In this case, the heat from the mounting board 5 can be spread over a wide area by the vapor chamber 30' and transferred to the housing 7, and the semiconductor element 21 can be cooled more efficiently.

In this case, the vapor chamber 30' and the mounting substrate 5 and/or the housing 7 may be joined to each other by a bonding material such as solder. The vapor chamber 30' and the mounting substrate 5 and/or the housing 7 may be fixed with a thermally conductive TIM sheet, grease, double-sided tape, or the like. In this case, the gap between the vapor chamber 30' and the mounting substrate 5 and/or the housing 7 can be reduced, the thermal resistance can be reduced, and heat can be transmitted smoothly. A screw hole may be formed in the vapor chamber 30', and the vapor chamber 30' and the mounting substrate 5 and/or the housing 7 may be fixed via a screw passing through the screw hole. In this case, the vapor chamber 30' can be firmly fixed to the mounting substrate 5 and/or the housing 7, and the reliability of the semiconductor device 20 against drops and vibrations can be improved.

In the above-described embodiment, the vapor chamber 30 may be bent as shown in FIG. 14. The vapor chamber 30 may include a bent region 35, a first region 36, and a second region 37. The bent region 35 is a region in which the vapor chamber 30 is bent. The first region 36 and the second region 37 are regions on the vapor chamber 30 separated by the bent region 35. The first region 36 of the vapor chamber 30 may be thermally connected to the semiconductor element 21, and the second region 37 of the vapor chamber 30 may be thermally connected to the mounting substrate 5. As shown in FIG. 14, the vapor chamber 30 may be bent in a U-shape, and the bent region 35 may have a curved cross-sectional shape. In the example shown in FIG. 14, the first region 36 is disposed on the semiconductor element 21. As shown in FIG. 14, the first region 36 may be disposed on the semiconductor element 21 via the first heat transfer member 25. In the example shown in FIG. 14, the second region 37 is disposed on the second substrate surface 5b of the mounting substrate 5. As shown in FIG. 14, the second region 37 may be in contact with the second substrate surface 5b of the mounting substrate 5. In other words, the vapor chamber 30 is bent so as to sandwich the mounting substrate 5, the die pad 11, the lead portion 12, the semiconductor element 21, the bonding wire 22, the first heat transfer member 25, and the sealing resin 23 between the first region 36 and the second region 37. In this case, the heat of the semiconductor element 21 can be transferred to the mounting substrate 5 through the vapor chamber 30 and dissipated, and the semiconductor element 21 can be cooled more efficiently. In addition, by using one bent vapor chamber 30, the heat transport efficiency per area in a plan view can be increased compared to the case of using multiple vapor chambers 30, and the manufacturing cost can be reduced.

Furthermore, as shown in FIG. 15, the bent vapor chamber 30 may be in contact with both the mounting substrate 5 and the housing 7. As shown in FIG. 15, the first outer surface 30a of the second region 37 of the vapor chamber 30 may be in contact with the second substrate surface 5b of the mounting substrate 5, and the second outer surface 30b of the second region 37 of the vapor chamber 30 may be in contact with the housing 7. That is, the second region 37 of the vapor chamber 30 may be disposed between the mounting substrate 5 and the housing 7. In this case, the heat of the semiconductor element 21 can be quickly transferred to both the mounting substrate 5 and the housing 7 via the vapor chamber 30, and the semiconductor element 21 can be cooled more efficiently.

In this case, the vapor chamber 30 and the mounting board 5 and/or the housing 7 may be joined to each other by a bonding material such as solder. The vapor chamber 30 and the mounting board 5 and/or the housing 7 may be fixed to each other by a thermally conductive TIM sheet, grease, double-sided tape, etc. In this case, the gap between the vapor chamber 30 and the mounting board 5 and/or the housing 7 can be reduced, the thermal resistance can be reduced, and heat can be transmitted smoothly. A screw hole may be formed in the vapor chamber 30, and the vapor chamber 30 and the mounting board 5 and/or the housing 7 may be fixed to each other via a screw passing through the screw hole. In this case, the vapor chamber 30 can be firmly fixed to the mounting board 5 and/or the housing 7, and the reliability of the semiconductor device 20 against drops and vibrations can be improved.

In the examples shown in Figures 14 and 15, the bending region 35 has a curved cross-sectional shape, but this is not limited to this. As shown in Figure 16, the bending region 35 may have a linear cross-sectional shape. As shown in Figure 16, the bending region 35 may have a cross-sectional shape that is perpendicular to the first region 36 and the second region 37 and extends linearly in the Z direction. In the examples shown in Figures 14 to 16, the second region 37 of the vapor chamber 30 is disposed on the second substrate surface 5b of the mounting substrate 5, but this is not limited to this. As shown in Figures 17 to 19, the second region 37 of the vapor chamber 30 may be disposed on the first substrate surface 5a of the mounting substrate 5. As shown in Figure 17, the bending region 35 may have a curved cross-sectional shape, and the second outer surface 30b of the second region 37 may be in contact with the first substrate surface 5a of the mounting substrate 5. 18, the bent region 35 may have a cross-sectional shape that extends linearly in the Z direction, and the first outer surface 30a of the second region 37 may be in contact with the first substrate surface 5a of the mounting substrate 5. As shown in FIG. 19, the bent region 35 may have a cross-sectional shape that extends at an angle with respect to the Z direction. In the example shown in FIG. 19, the angle θ1 between the bent region 35 and the mounting substrate 5 is smaller than 90 degrees. In this case, the heat of the semiconductor element 21 can be transferred to a position farther away from the semiconductor device 20, and the heat can be prevented from being transferred back to the semiconductor device 20. This allows the semiconductor element 21 to be cooled more efficiently.

20 to 22, the bent vapor chamber 30 may be in contact with the housing 7. As shown in FIG. 20, the bent region 35 may have a curved cross-sectional shape, and the second outer surface 30b of the second region 37 may be in contact with the housing 7. As shown in FIG. 21, the bent region 35 may have a cross-sectional shape that extends linearly in the Z direction, and the first outer surface 30a of the second region 37 may be in contact with the housing 7. As shown in FIG. 22, the bent region 35 may have a cross-sectional shape that extends at an angle with respect to the Z direction. In the example shown in FIG. 22, the angle θ2 between the bent region 35 and the housing 7 is smaller than 90 degrees. In this case, the heat of the semiconductor element 21 can be transferred to a position farther away from the semiconductor device 20, and the transfer of the heat to the semiconductor device 20 again can be suppressed. Therefore, the semiconductor element 21 can be cooled more efficiently.

Even in these cases, the vapor chamber 30 and the mounting board 5 or the housing 7 may be joined to each other by a bonding material such as solder. The vapor chamber 30 and the mounting board 5 or the housing 7 may be fixed with a thermally conductive TIM sheet, grease, double-sided tape, or the like. In this case, the gap between the vapor chamber 30 and the mounting board 5 or the housing 7 can be reduced, the thermal resistance can be reduced, and heat can be transmitted smoothly. In addition, a screw hole may be formed in the vapor chamber 30, and the vapor chamber 30 and the mounting board 5 or the housing 7 may be fixed via a screw passing through the screw hole. In this case, the vapor chamber 30 can be firmly fixed to the mounting board 5 or the housing 7, and the reliability of the semiconductor device 20 against drops and vibrations can be improved.

23, the vapor chamber 30 may be thermally connected to the mounting substrate 5 via the second heat transfer member 25'. As shown in FIG. 23, the second heat transfer member 25' may be interposed between the vapor chamber 30 and the mounting substrate 5, and the first outer surface 30a of the vapor chamber 30 may be in contact with the second heat transfer member 25', and the first substrate surface 5a of the mounting substrate 5 may be in contact with the second heat transfer member 25'. The second heat transfer member 25' may be made of the same material as the first heat transfer member 25 described above. The thickness of the second heat transfer member 25' may be, for example, 100 μm or more and 5000 μm or less. Also, as shown in FIG. 24, the vapor chamber 30 may be thermally connected to the housing 7 via the second heat transfer member 25'. As shown in FIG. 24, a second heat transfer member 25' may be interposed between the vapor chamber 30 and the housing 7, and the first outer surface 30a of the vapor chamber 30 may be in contact with the second heat transfer member 25', while the housing 7 may be in contact with the second heat transfer member 25'. The thickness of the second heat transfer member 25' may be, for example, 100 μm or more and 10,000 μm or less. In this case, the heat of the semiconductor element 21 can be transferred to the mounting substrate 5 or the housing 7 without bending the vapor chamber 30. That is, in the manufacture of the semiconductor device 20, it is not necessary to bend the vapor chamber 30. Therefore, it is possible to suppress an increase in the manufacturing process of the semiconductor device 20, and an increase in the manufacturing cost of the semiconductor device 20 can be suppressed.

In this case, the vapor chamber 30 and the second heat transfer member 25' may be joined to each other by a joining material such as solder. The vapor chamber 30 and the second heat transfer member 25' may be fixed to each other by a thermally conductive TIM sheet, grease, double-sided tape, etc. Similarly, the second heat transfer member 25' and the mounting board 5 or the housing 7 may be joined to each other by a joining material such as solder. The second heat transfer member 25' and the mounting board 5 or the housing 7 may be fixed to each other by a thermally conductive TIM sheet, grease, double-sided tape, etc. In this case, the gap between the two can be reduced, the thermal resistance can be reduced, and heat can be transferred smoothly.

In addition, instead of interposing the second heat transfer member 25' between the vapor chamber 30 and the mounting substrate 5 or the housing 7, the two may be thermally connected and fixed to each other with a thermally conductive TIM sheet, grease, double-sided tape, etc. In this case, it is possible to suppress an increase in the number of manufacturing parts of the semiconductor device 20, and an increase in the manufacturing cost of the semiconductor device 20 can be suppressed.

As shown in Figs. 25 to 33, the semiconductor device 20 can have various planar configurations. In the semiconductor device 20 shown in Figs. 25 to 33, the solid lines indicate the vapor chamber 30, the dashed lines indicate the semiconductor element 21 (heat source) which is a heat source, the two-dot chain lines indicate the connection surface 33 of the vapor chamber 30 with the mounting board 5 or the housing 7, and the arrows indicate the flow of heat. The connection surface 33 is the portion where the vapor chamber 30 is thermally connected to the mounting board 5 or the housing 7, and includes cases where the vapor chamber 30 and the mounting board 5 or the housing 7 are in direct contact with each other, as well as cases where a member such as the second heat transfer member 25' is interposed between the two.

25, the vapor chamber 30 may be thermally connected to the mounting substrate 5 or the housing 7 at one side in one direction. As shown in FIG. 25, the vapor chamber 30 may have an elongated planar shape extending in the X direction, and may be thermally connected to the semiconductor element 21 at one end in the X direction (left side in the figure), and may be thermally connected to the mounting substrate 5 or the housing 7 at the other end in the X direction (right side in the figure). Also, as shown in FIG. 26, the vapor chamber 30 may be thermally connected to the mounting substrate 5 or the housing 7 at both sides in one direction. As shown in FIG. 26, the vapor chamber 30 may have an elongated planar shape extending in the X direction, and may be thermally connected to the semiconductor element 21 at the center in the X direction, and may be thermally connected to the mounting substrate 5 or the housing 7 at each of the end on one side and the end on the other side in the X direction.

27 to 29, the vapor chamber 30 may be thermally connected to the mounting board 5 or the housing 7 at three or more points. As shown in FIG. 27, the vapor chamber 30 may have a T-shaped (inverted T-shaped) planar shape, and may extend from the center (branch of the T) to one side and the other side in the X direction and one side in the Y direction (upper side in the figure). The vapor chamber 30 may be thermally connected to the semiconductor element 21 at its center, and may be thermally connected to the mounting board 5 or the housing 7 at each of its ends on one side in the X direction and the other side in the Y direction. As shown in FIG. 28, the vapor chamber 30 may have a cross-shaped planar shape, and may extend from the center to one side and the other side in the X direction and one side (upper side in the figure) and the other side (lower side in the figure). The vapor chamber 30 may be thermally connected to the semiconductor element 21 at its center, and may be thermally connected to the mounting substrate 5 or the housing 7 at each of its ends on one side in the X direction and the other side in the Y direction. As shown in FIG. 29, the vapor chamber 30 may have a planar shape extending radially from the center. As an example, FIG. 29 shows an example in which the vapor chamber 30 extends radially in eight directions from the center. In the example shown in FIG. 29, the vapor chamber 30 is thermally connected to the semiconductor element 21 at its center, and is thermally connected to the mounting substrate 5 or the housing 7 at each of its ends extending in the eight directions.

Also, as shown in Figures 30 to 33, the vapor chamber 30 may be thermally connected to a plurality of semiconductor elements 21. As shown in Figure 30, the vapor chamber 30 may have an elongated planar shape extending in the X direction, and may be thermally connected to each semiconductor element 21 at each of one end and the other end in the X direction, and may be thermally connected to the mounting board 5 or the housing 7 at the center in the X direction. Also, as shown in Figure 31, the vapor chamber 30 may have a T-shaped (inverted T-shaped) planar shape, and may extend from the center (branching part of the T) to one side and the other side in the X direction and to one side in the Y direction. And, the vapor chamber 30 may be thermally connected to each semiconductor element 21 at each of one end and the other end in the X direction and one end in the Y direction, and may be thermally connected to the mounting board 5 or the housing 7 at the center. Also, as shown in FIG. 32, the vapor chamber 30 may have a cross-shaped planar shape and may extend from the center to one side and the other side in the X direction and one side and the other side in the Y direction. The vapor chamber 30 may be thermally connected to each semiconductor element 21 at each end of the vapor chamber 30 in the X direction and one side and the other end of the vapor chamber 30 in the Y direction, and may be thermally connected to the mounting board 5 or the housing 7 at the center. Also, as shown in FIG. 33, the vapor chamber 30 may have a planar shape extending radially from the center. As an example, FIG. 33 shows an example in which the vapor chamber 30 extends radially in eight directions from the center. In the example shown in FIG. 33, the vapor chamber 30 is thermally connected to each semiconductor element 21 at each end extending in eight directions, and is thermally connected to the mounting board 5 or the housing 7 at the center.

34 to 36, the vapor chamber 30 may be bent so as to surround the semiconductor element 21, the lead portion 12, and the sealing resin 23. As shown in FIGS. 34 to 36, the vapor chamber 30 may be bent on both sides in the X direction and on both sides in the Y direction. That is, the first region 36 is located in the center of the vapor chamber 30, and the second region 37 is located on both sides in the X direction and both sides in the Y direction of the first region 36, respectively, via the bent region 35. As shown in FIG. 35, each bent region 35 may have a cross-sectional shape extending linearly in the Z direction, and the first outer surface 30a of each second region 37 may be in contact with the first board surface 5a of the mounting board 5. As shown in FIG. 36, each bent region 35 may have a cross-sectional shape extending linearly in the Z direction, and the first outer surface 30a of each second region 37 may be in contact with the housing 7. In this case, the area of the connection surface 33 of the vapor chamber 30 with the mounting board 5 or the housing 7 can be increased, and the heat of the semiconductor element 21 can be quickly transferred to the mounting board 5 or the housing 7 via the vapor chamber 30. In addition, if any of the sheets constituting the vapor chamber 30 are made of metal materials such as pure copper, copper alloy, aluminum, stainless steel, or ceramics, the vapor chamber 30 can function as a shielding case that blocks electromagnetic waves, and can protect the semiconductor element 21 from electromagnetic waves.

37 to 40, the vapor chamber 30 may be embedded in the sealing resin 23. As shown in FIG. 37, the upper surface of the sealing resin 23 may be located between the first outer surface 30a and the second outer surface 30b of the vapor chamber 30, and a part of the vapor chamber 30 in the thickness direction (for example, the lower half) may be embedded in the sealing resin 23. As shown in FIG. 38, the upper surface of the sealing resin 23 may be located at the same height as the second outer surface 30b of the vapor chamber 30, and the entire vapor chamber 30 in the thickness direction may be embedded in the sealing resin 23. As shown in FIG. 39, the upper surface of the sealing resin 23 may be located above the second outer surface 30b of the vapor chamber 30, and the entire vapor chamber 30 in the thickness direction may be embedded in the sealing resin 23. Also, as shown in FIG. 40, the upper surface of the sealing resin 23 may be located above the second outer surface 30b of the vapor chamber 30, the entire thickness of the vapor chamber 30 may be embedded in the sealing resin 23, and a part of the second outer surface 30b of the vapor chamber 30 (a part close to the periphery of the vapor chamber 30) may be covered by the sealing resin 23. In either case, the sealing resin 23 does not have to be arranged along the entire periphery of the vapor chamber 30, but only needs to be arranged so as to contact a part of the periphery of the vapor chamber 30. By embedding the vapor chamber 30 in the sealing resin 23 in this way, the vapor chamber 30 can be firmly fixed to the semiconductor device 20. Therefore, it is possible to suppress the occurrence of a gap between the vapor chamber 30 and the first heat transfer member 25, which would increase the thermal resistance.

Second Embodiment
Next, a semiconductor device with a heat dissipation component according to a second embodiment of the present disclosure will be described with reference to FIGS.

The second embodiment shown in Figures 41 to 43 differs mainly in that at least a portion of the heat dissipation member is embedded in the sealing resin, and the portion of the heat dissipation member embedded in the sealing resin is in contact with the semiconductor element. The other configurations are substantially the same as those of the first embodiment shown in Figures 1 to 11. Note that in Figures 41 to 43, the same parts as those in the first embodiment shown in Figures 1 to 11 are given the same reference numerals and detailed descriptions are omitted.

In the semiconductor device 20 according to the first embodiment described above, as shown in FIG. 4, a first heat transfer member 25 is provided between the semiconductor element 21 and the vapor chamber 30, and the vapor chamber 30 is connected to the semiconductor element 21 via the first heat transfer member 25. In the semiconductor device 20 according to this embodiment, as shown in FIGS. 41 and 42, a part of the vapor chamber 30 is embedded in the sealing resin 23, and the part of the vapor chamber 30 embedded in the sealing resin 23 is in contact with the semiconductor element 21. There may be no other member between the vapor chamber 30 and the semiconductor element 21, and the part of the vapor chamber 30 embedded in the sealing resin 23 may be in direct contact with the semiconductor element 21. In this specification, the vapor chamber 30 being embedded in the sealing resin 23 means that the top surface of the sealing resin 23 is located above the bottom surface of the vapor chamber 30, and the sealing resin 23 is arranged so as to be in contact with at least a part of the periphery of the vapor chamber 30. Furthermore, a portion of the vapor chamber 30 being embedded in the sealing resin 23 means that the uppermost surface of the sealing resin 23 is located above the lowermost surface of that portion of the vapor chamber 30, and that the sealing resin 23 is positioned so as to contact at least a portion of the periphery of that portion.

41 and 42, the vapor chamber 30 has a central portion 30c and a peripheral portion 30d. The central portion 30c is a portion located in the center of the vapor chamber 30 in a planar view. The peripheral portion 30d is a portion located around the central portion 30c in a planar view. The vapor chamber 30 is bent so that the central portion 30c is convex toward the semiconductor element 21 side with respect to the peripheral portion 30d. The central portion 30c of this vapor chamber 30 is embedded in the sealing resin 23. The first outer surface 30a of the central portion 30c of this vapor chamber 30 is in contact with the semiconductor element 21. There may be no other member between the central portion 30c of the vapor chamber 30 and the semiconductor element 21, and the central portion 30c of the vapor chamber 30 may be in direct contact with the semiconductor element 21. As shown in FIG. 41 and FIG. 42, the sealing resin 23 may be disposed on the central portion 30c of the vapor chamber 30, i.e., on the second outer surface 30b in the central portion 30c of the vapor chamber 30. The sealing resin 23 on the central portion 30c may be disposed separately from the sealing resin 23 in other portions. The sealing resin 23 on the central portion 30c may be disposed in an island shape. That is, as shown in FIG. 42, the sealing resin 23 on the central portion 30c may be surrounded by the vapor chamber 30 in a plan view, and the peripheral portion 30d of the vapor chamber 30 may be located on both sides in the X direction and both sides in the Y direction. Also, as shown in FIG. 41, unlike the first embodiment described above, the first heat transfer member 25 may not be disposed between the semiconductor element 21 and the vapor chamber 30.

When manufacturing the semiconductor device 20 according to this embodiment, for example, as shown in FIG. 43(a), before sealing with the sealing resin 23, the bent vapor chamber 30 may be placed on the semiconductor element 21 so that the central portion 30c is convex toward the semiconductor element 21 side with respect to the peripheral portion 30d. Here, the vapor chamber 30 may be placed on the semiconductor element 21 so that the first outer surface 30a at the central portion 30c of the vapor chamber 30 contacts the semiconductor element 21. The central portion 30c of the vapor chamber 30 may be joined to the semiconductor element 21 by a bonding material such as solder. After that, the semiconductor element 21 and the central portion 30c of the vapor chamber 30 may be sealed with the sealing resin 23 as shown in FIG. 43(b).

According to this embodiment, the portion of the vapor chamber 30 embedded in the sealing resin 23 is in contact with the semiconductor element 21, so that the heat of the semiconductor element 21 in the sealing resin 23 can be directly absorbed by the vapor chamber 30. Therefore, the semiconductor element 21 in the sealing resin 23 can be cooled more efficiently by the vapor chamber 30.

In the above-described embodiment, an example in which the sealing resin 23 is disposed on the central portion 30c of the vapor chamber 30 has been described. However, this is not limited to the above, and as shown in FIG. 44, the sealing resin 23 may not be disposed on the central portion 30c of the vapor chamber 30. In the above-described embodiment, an example in which the sealing resin 23 on the central portion 30c is disposed in an island shape has been described. However, this is not limited to the above, and the sealing resin 23 on the central portion 30c may not be disposed in an island shape. For example, as shown in FIG. 45, the sealing resin 23 on the central portion 30c may extend from an edge on one side to an edge on the other side in the Y direction in a plan view, and the peripheral portions 30d of the vapor chamber 30 are located on both sides in the X direction, but the peripheral portions 30d of the vapor chamber 30 may not be located on both sides in the Y direction. In this case, the central portion 30c may also extend from an edge on one side to an edge on the other side in the Y direction in a plan view, and the peripheral portions 30d may be located on both sides of the central portion 30 in the X direction. In the above-described embodiment, the central portion 30c of the vapor chamber 30 is embedded in the sealing resin 23, and the embedded central portion 30c is in contact with the semiconductor element 21. However, this is not limited to the above, and the portion in contact with the semiconductor element 21 does not have to be the central portion 30c of the vapor chamber 30. For example, as shown in FIG. 46 and FIG. 47, the corner portion 30e of the vapor chamber 30 may be embedded in the sealing resin 23, and the embedded corner portion 30e may be in contact with the semiconductor element 21. In this case, as shown in FIG. 46, the vapor chamber 30 may be bent so that the corner portion 30e is recessed toward the semiconductor element 21 side with respect to the other portions. Also, the portion in contact with the semiconductor element 21 may be any other portion of the vapor chamber 30.

In the above-described embodiment, an example in which the vapor chamber 30 is bent has been described. However, instead of this, as shown in FIG. 48, the vapor chamber 30 may have a convex portion 30f protruding toward the semiconductor element 21. The convex portion 30f of the vapor chamber 30 may be embedded in the sealing resin 23, and the embedded convex portion 30f may be in contact with the semiconductor element 21. In the example shown in FIG. 48, the convex portion 30f is provided in the center portion 30c of the vapor chamber 30, but this is not limited to this, and the convex portion 30f may be provided at any position of the vapor chamber 30.

In addition, in this embodiment, similar to the example shown in Figures 12 and 13, another vapor chamber 30' (second heat dissipation member) may be disposed on the second substrate surface 5b of the mounting substrate 5. Also, similar to the examples shown in Figures 14 to 22, the vapor chamber 30 may be bent to be in thermal contact with the mounting substrate 5 and/or the housing 7. Also, similar to the examples shown in Figures 23 and 24, the vapor chamber 30 may be thermally connected to the mounting substrate 5 via the second heat transfer member 25'. In addition, a part of the configuration of the first embodiment may be applied to the configuration of the second embodiment as appropriate.

Third Embodiment
Next, a semiconductor device with a heat dissipation component according to a third embodiment of the present disclosure will be described with reference to FIGS.

The third embodiment shown in Figures 49 and 50 differs mainly in that the semiconductor element is placed on the lead portion, and the lead portion is electrically connected to the semiconductor element via a bump. The other configuration is substantially the same as the first embodiment shown in Figures 1 to 11. Note that in Figures 49 and 50, the same parts as those in the first embodiment shown in Figures 1 to 11 are given the same reference numerals and detailed explanations are omitted.

In the semiconductor device 20 according to the first embodiment described above, as shown in FIG. 4, the semiconductor element 21 is placed on the die pad 11, and the lead portion 12 is electrically connected to the semiconductor element 21 via the bonding wire 22. In the semiconductor device 20 according to this embodiment, as shown in FIGS. 49 and 50, the semiconductor element 21 is placed on the lead portion 12, and the lead portion 12 is electrically connected to the semiconductor element 21 via the bump 26. In other words, the semiconductor device 20 according to this embodiment is a so-called flip-chip type semiconductor device.

Each bump 26 electrically connects each lead 12 to the semiconductor element 21. One end of each bump 26 is connected to the electrode 21a of the semiconductor element 21, and the other end is connected to the internal terminal 15 of each lead 12. The internal terminal 15 may be provided with a plated portion to improve adhesion with the bump 26. Each bump 26 may be made of a metal material with good conductivity, such as copper. Each bump 26 may have a solid, approximately cylindrical shape. The bump 26, together with the lead 12 and the semiconductor element 21, is sealed with sealing resin 23.

In the example shown in FIG. 49, the vapor chamber 30 is disposed on the semiconductor element 21. As shown in FIG. 49, the first outer surface 30a of the vapor chamber 30 may be in contact with the semiconductor element 21. The first outer surface 30a of the vapor chamber 30 and the semiconductor element 21 may be joined to each other by a joining material such as solder. The first outer surface 30a of the vapor chamber 30 and the semiconductor element 21 may be fixed to each other by a thermally conductive TIM sheet, grease, double-sided tape, or the like. As shown in FIG. 49, the vapor chamber 30 may cover the semiconductor element 21 in a plan view, and the planar area of the vapor chamber 30 may be larger than the planar area of the semiconductor element 21. As shown in FIG. 49, the vapor chamber 30 may cover the sealing resin 23 in a plan view, and the planar area of the vapor chamber 30 may be larger than the planar area of the sealing resin 23.

50, the vapor chamber 30 is also disposed on the semiconductor element 21. As shown in FIG. 50, the first outer surface 30a of the vapor chamber 30 may be in contact with the semiconductor element 21. The first outer surface 30a of the vapor chamber 30 and the semiconductor element 21 may be joined to each other by a joining material such as solder. As shown in FIG. 50, the vapor chamber 30 may cover the semiconductor element 21 in a plan view, and the planar area of the vapor chamber 30 may be larger than the planar area of the semiconductor element 21. On the other hand, as shown in FIG. 50, the vapor chamber 30 may be disposed inside the outer edge of the sealing resin 23 in a plan view, and the planar area of the vapor chamber 30 may be smaller than the planar area of the sealing resin 23. In this case, the vapor chamber 30 may be embedded in the sealing resin 23 so that at least a part of the second outer surface 30b is exposed to the outside. As shown in FIG. 50, the entire second outer surface 30b of the vapor chamber 30 may be exposed to the outside of the sealing resin 23.

In this embodiment, at least a portion of the second outer surface 30b of the vapor chamber 30, which is thermally connected to the semiconductor element 21, is exposed to the outside of the sealing resin 23, so that the heat of the semiconductor element 21 can be efficiently released to the outside via the vapor chamber 30. This allows the semiconductor element 21 to be efficiently cooled.

In addition, according to this embodiment, since the vapor chamber 30 is in contact with the semiconductor element 21, the heat of the semiconductor element 21 in the sealing resin 23 can be directly absorbed by the vapor chamber 30. Therefore, the semiconductor element 21 in the sealing resin 23 can be cooled more efficiently by the vapor chamber 30.

In addition, according to this embodiment, it is not necessary to bend the vapor chamber 30 in the manufacture of the semiconductor device 20. This makes it possible to suppress an increase in the number of manufacturing steps for the semiconductor device 20, and therefore an increase in the manufacturing cost of the semiconductor device 20.

In this embodiment, as in the example shown in FIG. 12 and FIG. 13, another vapor chamber 30' (second heat dissipation member) may be disposed on the second substrate surface 5b of the mounting substrate 5. As in the examples shown in FIG. 14 to FIG. 22, the vapor chamber 30 may be bent to be in thermal contact with the mounting substrate 5 and/or the housing 7. As in the examples shown in FIG. 23 and FIG. 24, the vapor chamber 30 may be thermally connected to the mounting substrate 5 via the second heat transfer member 25'. In addition, a part of the configuration of the first embodiment and the second embodiment may be applied to the configuration of the third embodiment as appropriate.

According to the embodiment described above, semiconductor elements can be cooled efficiently.

The present invention is not limited to the above-described embodiments and modifications, and can be embodied in practice by modifying the components without departing from the spirit of the invention. In addition, various inventions can be created by appropriately combining the multiple components disclosed in the above-described embodiments and modifications. Some components may be deleted from all the components shown in each embodiment and modification.

5 Mounting substrate 5a First substrate surface 5b Second substrate surface 10 Lead frame 11 Die pad 12 Lead portion 20 Semiconductor device 21 Semiconductor element 22 Bonding wire 23 Sealing resin 25 First heat transfer member 25' Second heat transfer member 26 Bump 30 Vapor chamber 30a First outer surface 30b Second outer surface 30' Other vapor chamber 31a Working vapor 31b Working liquid 35 Bending region 36 First region 37 Second region

Claims (11)

A semiconductor device with a heat dissipation component,
A semiconductor element;
a lead portion electrically connected to the semiconductor element;
a sealing resin that seals the semiconductor element and the lead portion;
a first heat dissipation member thermally connected to the semiconductor element, the first heat dissipation member having a first outer surface located on the semiconductor element side and a second outer surface located on the opposite side to the first outer surface;
At least a portion of the second outer surface of the first heat dissipation member is exposed to the outside of the sealing resin. The semiconductor device with a heat dissipation member according to claim 1, wherein the planar area of the first heat dissipation member is larger than the planar area of the semiconductor element. The semiconductor device with a heat dissipation member according to claim 1, wherein at least a portion of the first heat dissipation member is embedded in the sealing resin. The semiconductor device with heat dissipation member according to claim 3, wherein the portion of the first heat dissipation member embedded in the sealing resin is in contact with the semiconductor element. The semiconductor device with heat dissipation member according to claim 1, wherein a first heat transfer member is interposed between the semiconductor element and the first heat dissipation member. The semiconductor device with heat dissipation member according to claim 1, wherein the first heat dissipation member includes a bent region in which the first heat dissipation member is bent. the first heat dissipation member includes a first region and a second region separated by the bent region,
the first region of the first heat dissipation member is thermally connected to the semiconductor element;
The semiconductor device with a heat dissipation component according to claim 6, wherein the second region of the first heat dissipation component is thermally connected to a mounting board on which the semiconductor device with a heat dissipation component is placed or to a housing that houses the semiconductor device with a heat dissipation component. The semiconductor device with a heat dissipation member according to claim 1, wherein the first heat dissipation member is thermally connected to a mounting board on which the semiconductor device with a heat dissipation member is disposed or to a housing that houses the semiconductor device with a heat dissipation member via a second heat transfer member. The semiconductor device with a heat dissipation component is disposed on a mounting substrate,
the mounting substrate has a first substrate surface located on the semiconductor element side and a second substrate surface located on the opposite side to the first substrate surface,
2 . The semiconductor device with a heat dissipation component according to claim 1 , further comprising a second heat dissipation component different from the first heat dissipation component, the second substrate surface of the mounting substrate being disposed on the second substrate surface. The semiconductor device with a heat dissipation member according to any one of claims 1 to 9, wherein the first heat dissipation member is a vapor chamber. A method for manufacturing a semiconductor device with a heat dissipation component, comprising the steps of:
preparing a lead frame having a lead portion and a heat dissipation member having a first outer surface and a second outer surface located on an opposite side to the first outer surface;
placing a semiconductor element on the lead frame;
a step of electrically connecting the semiconductor element and the lead portion;
a step of sealing the semiconductor element and the lead portion with a sealing resin;
cutting the lead frame into individual semiconductor devices;
and thermally connecting the heat dissipation member to the semiconductor element.
the first outer surface of the heat dissipation member is located on the semiconductor element side,
A method for manufacturing a semiconductor device with a heat dissipation component, wherein at least a portion of the second outer surface of the heat dissipation component is exposed to the outside of the sealing resin.

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