JP2024068760A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2024068760A
JP2024068760A JP2022179333A JP2022179333A JP2024068760A JP 2024068760 A JP2024068760 A JP 2024068760A JP 2022179333 A JP2022179333 A JP 2022179333A JP 2022179333 A JP2022179333 A JP 2022179333A JP 2024068760 A JP2024068760 A JP 2024068760A
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JP
Japan
Prior art keywords
electrode
region
channel stopper
semiconductor device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022179333A
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English (en)
Japanese (ja)
Other versions
JP2024068760A5 (enExample
Inventor
康一 西
Koichi Nishi
哲也 新田
Tetsuya Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2022179333A priority Critical patent/JP2024068760A/ja
Priority to US18/453,932 priority patent/US20240153989A1/en
Priority to DE102023125588.6A priority patent/DE102023125588A1/de
Priority to CN202311456805.2A priority patent/CN118016687A/zh
Publication of JP2024068760A publication Critical patent/JP2024068760A/ja
Publication of JP2024068760A5 publication Critical patent/JP2024068760A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates

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  • Electrodes Of Semiconductors (AREA)
JP2022179333A 2022-11-09 2022-11-09 半導体装置 Pending JP2024068760A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022179333A JP2024068760A (ja) 2022-11-09 2022-11-09 半導体装置
US18/453,932 US20240153989A1 (en) 2022-11-09 2023-08-22 Semiconductor device
DE102023125588.6A DE102023125588A1 (de) 2022-11-09 2023-09-21 Halbleitervorrichtung
CN202311456805.2A CN118016687A (zh) 2022-11-09 2023-11-03 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022179333A JP2024068760A (ja) 2022-11-09 2022-11-09 半導体装置

Publications (2)

Publication Number Publication Date
JP2024068760A true JP2024068760A (ja) 2024-05-21
JP2024068760A5 JP2024068760A5 (enExample) 2024-11-25

Family

ID=90928146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022179333A Pending JP2024068760A (ja) 2022-11-09 2022-11-09 半導体装置

Country Status (4)

Country Link
US (1) US20240153989A1 (enExample)
JP (1) JP2024068760A (enExample)
CN (1) CN118016687A (enExample)
DE (1) DE102023125588A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024099005A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機
JP2024099006A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機
JP2024099004A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138759A (ja) * 1986-12-26 1989-05-31 Toshiba Corp 高耐圧プレーナ素子
JP2010245281A (ja) * 2009-04-06 2010-10-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015104900A1 (ja) * 2014-01-10 2015-07-16 三菱電機株式会社 半導体装置
JP2020068244A (ja) * 2018-10-23 2020-04-30 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564088B2 (en) * 2008-08-19 2013-10-22 Infineon Technologies Austria Ag Semiconductor device having variably laterally doped zone with decreasing concentration formed in an edge region
JP5515922B2 (ja) * 2010-03-24 2014-06-11 富士電機株式会社 半導体装置
JP5640969B2 (ja) * 2011-12-26 2014-12-17 三菱電機株式会社 半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01138759A (ja) * 1986-12-26 1989-05-31 Toshiba Corp 高耐圧プレーナ素子
JP2010245281A (ja) * 2009-04-06 2010-10-28 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2015104900A1 (ja) * 2014-01-10 2015-07-16 三菱電機株式会社 半導体装置
JP2020068244A (ja) * 2018-10-23 2020-04-30 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024099005A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機
JP2024099006A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機
JP2024099004A (ja) * 2021-12-03 2024-07-24 株式会社三洋物産 遊技機

Also Published As

Publication number Publication date
CN118016687A (zh) 2024-05-10
US20240153989A1 (en) 2024-05-09
DE102023125588A1 (de) 2024-05-16

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