JP2023538746A - バッチ処理チャンバのための処理間隙制御を有するヒータアセンブリ - Google Patents
バッチ処理チャンバのための処理間隙制御を有するヒータアセンブリ Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims description 98
- 238000000034 method Methods 0.000 title description 37
- 230000008569 process Effects 0.000 title description 26
- 239000000758 substrate Substances 0.000 claims description 55
- 239000012530 fluid Substances 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims 4
- 238000010586 diagram Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 23
- 238000012546 transfer Methods 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 210000002381 plasma Anatomy 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
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Abstract
Description
Claims (20)
- ヒータアセンブリであって、
厚さを画定する支持面と底面とを含むヒータと、
頂部端及び底部端を有し、前記頂部端が前記ヒータの前記底面と接触するヒータスタンドオフと、
頂部端と底部端、開放内部領域を囲む内面及び外面を有するシールドシャフトであって、前記ヒータスタンドオフは前記開放内部領域内に位置し、前記ヒータスタンドオフの前記頂部端は、前記シールドシャフトの前記頂部端の上に延在している、前記シールドシャフトと、
頂面、底面及び外周エッジを有するシールド板であって、内部内に前記頂面から前記底面まで延在している開口部を有し、前記ヒータスタンドオフは前記シールド板内の前記開口部を通って延在し、前記ヒータの前記底面は、前記シールド板の前記頂面からある距離離れており、前記シールド板の前記頂面は、前記シールド板の外周部の周りに延在する、内面及び外面を有する溝を有し、前記外面は前記シールド板の前記外周エッジからある距離離れている、前記シールド板と、
を有するヒータアセンブリ。 - 前記シールドシャフトが、前記外面から外向きに延びる頂部フランジを含み、前記シールドシャフトは、前記頂部フランジを通って延びるファスナで前記シールド板に接続されている、請求項1に記載のヒータアセンブリ。
- 前記スタンドオフの前記底部端に接続されているスタンドオフ取付ベースをさらに含む、請求項1に記載のヒータアセンブリ。
- 前記スタンドオフ取付ベースが、前記シールドシャフトの前記底部端に接続されている、請求項3に記載のヒータアセンブリ。
- 前記シールドシャフトの前記底部端が、前記スタンドオフ取付ベースの下部を通過させる開口部を有する、請求項4に記載のヒータアセンブリ。
- 頂面を有するヒータ取付ベースをさらに含み、前記シールドシャフトの前記底面は、前記ヒータ取付ベースの前記頂面に隣接して位置決めされている、請求項5に記載のヒータアセンブリ。
- 前記ヒータ取付ベースの前記頂面が、前記ヒータ取付ベースの中空の内部領域に接続されている開口部を含む、請求項6に記載のヒータアセンブリ。
- 前記スタンドオフ取付ベースの前記下部が、電気接続が前記ヒータ取付ベースの前記中空の内部領域を通過し、前記スタンドオフ取付ベースを通り、前記ヒータスタンドオフの開放内部チャネルに入ることができるよう、前記ヒータ取付ベースの前記頂面の前記開口部中に少なくとも部分的に延在している、請求項7に記載のヒータアセンブリ。
- 流体シールが、前記ヒータ取付ベースの前記頂面の円形溝内に配置され、前記流体シールは、前記ヒータ取付ベースの前記頂面の法線に対する前記シールドシャフトの移動を可能にする、請求項6に記載のヒータアセンブリ。
- 前記シールドシャフトの前記底面が、前記外面から外向きに延びる底部フランジを含む、請求項9に記載のヒータアセンブリ。
- 前記シールドシャフトの底部フランジを通って前記ヒータ取付ベース中に延びる複数のレベリングファスナをさらに含み、前記レベリングファスナは、前記シールドシャフトを前記ヒータ取付ベースの前記頂面の法線に対して調整するように構成されている、請求項10に記載のヒータアセンブリ。
- トップ板をさらに含み、前記トップ板は該トップ板の厚さを画定する頂面及び底面を有し、前記トップ板は、前記厚さを貫通して前記ヒータを通過させる開口部を有し、前記トップ板の前記底面は、前記シールド板の前記頂面内の前記溝内の流体シールと接触している、請求項1に記載のヒータアセンブリ。
- リング状シムをさらに含み、前記リング状シムは該リング状シムの厚さを画定する頂面及び底面を有し、前記リング状のシムは、前記シールド板の前記頂面と前記トップ板の前記底面との間で前記ヒータの周りに位置決めされている、請求項12に記載のヒータアセンブリ。
- 前記流体シールが、雰囲気に対して密閉し、前記シールド板の前記頂面と前記板の前記底面との間の垂直方向の間隙の変動が最大1mmの真空の完全性を維持するように構成されている、請求項13に記載のヒータアセンブリ。
- 前記流体シールが不均一に圧縮されるように構成されている、請求項14に記載のヒータアセンブリ。
- 前記流体シールが、シーリングプラットフォームとシーリング板との間の最大0.5mmの垂直方向の間隙の変動に対応するように構成されている、請求項14に記載のヒータアセンブリ。
- 前記流体シールが、前記シーリングプラットフォームと前記シーリング板との間の0.5mmの間隙で、2%~3%の最小圧縮を有するように構成されている、請求項14に記載のヒータアセンブリ。
- 前記流体シールが12%~13%の最大圧縮を有するように構成されている、請求項14に記載のヒータアセンブリ。
- ヒータアセンブリに一体化されている熱シールドであって、
頂部端と底部端、開放内部領域を囲む内面及び外面を有するシールドシャフトであって、前記開放内部領域は、ヒータスタンドオフを囲むように構成されている、前記シールドシャフトと、
頂面、底面及び外周エッジを有するシールド板であって、前記シールド板は、内部内に前記頂面から前記底面まで延在している開口部を有し、前記ヒータスタンドオフは前記シールド板内の前記開口部を通って延在し、前記ヒータの前記底面は、前記シールド板の前記頂面からある距離離れており、前記シールド板の前記頂面は、前記シールド板の外周部の周りに延在する、内面及び外面を有する溝を有し、前記外面は前記シールド板の前記外周エッジからある距離離れている、前記シールド板と、
処理ステーション内の低圧条件を維持するために前記シールド板の前記溝内に配置されている第1の流体シールと、
前記シールドシャフトの前記底面と支持アームの頂面との間に配置されている第2の流体シールと、
を含む、ヒータアセンブリに一体化されている熱シールド。 - 基板支持体であって、
中心ベースであって、該中心ベースから延びる複数のアームを有し、各アームは、前記中心ベースと接触する内部端及び外端を有する前記中心ベースと、
各アームの前記外端に接続されているヒータアセンブリであって、
支持面と厚さを画定する底面とを含むヒータ、
頂部端及び底部端を有し、前記頂部端が前記ヒータの前記底面と接触するヒータスタンドオフ、
頂部端と底部端、開放内部領域を囲む内面及び外面を有するシールドシャフトであって、前記ヒータスタンドオフは前記開放内部領域内に位置し、前記ヒータスタンドオフの前記頂部端は、前記シールドシャフトの前記頂部端の上に延在している、前記シールドシャフト、及び
頂面、底面及び外周エッジを有するシールド板であって、前記シールド板は内部内に前記頂面から前記底面まで延在している開口部を有し、前記ヒータスタンドオフは前記シールド板内の前記開口部を通って延在し、前記ヒータの前記底面は、前記シールド板の前記頂面からある距離離れており、前記シールド板の前記頂面は、前記シールド板の外周部の周りに延在する、内面及び外面を有する溝を有し、前記外面は前記シールド板の前記外周エッジからある距離離れている、前記シールド板、
を有する前記ヒータアセンブリと、
トップ板であって、前記トップ板は該トップ板の厚さを画定する頂面及び底面を有し、前記トップ板は、前記厚さを貫通して前記ヒータを通過させる開口部を有し、前記トップ板の前記底面は、前記流体シールと接触している、前記トップ板と、
を含む基板支持体。
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