JP2023537684A - エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 - Google Patents
エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 Download PDFInfo
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- JP2023537684A JP2023537684A JP2023505370A JP2023505370A JP2023537684A JP 2023537684 A JP2023537684 A JP 2023537684A JP 2023505370 A JP2023505370 A JP 2023505370A JP 2023505370 A JP2023505370 A JP 2023505370A JP 2023537684 A JP2023537684 A JP 2023537684A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (20)
- 基板処理のための装置であって、
エッジリングであって、
底面と、
上面と、
前記上面に配置された溝と
を含むエッジリングと、
前記溝に配置されたオーバーハングリングであって、更に、
前記溝から延在する第1の部分と、
前記第1の部分に接続され、径方向内側に延在する第2の部分と
を含むオーバーハングリングと
を備える装置。 - 前記エッジリングは石英材料を含む、請求項1に記載の装置。
- 前記オーバーハングリングは石英材料を含む、請求項1に記載の装置。
- 前記エッジリングは更に、前記上面に配置された複数のタブを含む、請求項1に記載の装置。
- 前記複数のタブは3から10個のタブを含む、請求項4に記載の装置。
- 前記複数のタブは、溝の径方向内側に配置される、請求項4に記載の装置。
- 前記オーバーハングリングの第2の部分は、前記複数のタブの外面の径方向内側に延在する、請求項4に記載の装置。
- 前記エッジリングは更に、外側レッジを含み、前記外側レッジは、前記エッジリングの底面から延在する、請求項1に記載の装置。
- 前記オーバーハングリングの第2の部分は、前記オーバーハングリングの第1の部分に対して垂直である、請求項1に記載の装置。
- 前記オーバーハングリングは、前記エッジリングの内半径より小さい内半径を有する、請求項1に記載の装置。
- 前記エッジリングの溝は、前記オーバーハングリングの第1の部分を受け入れる大きさの側壁を有する、請求項1に記載の装置。
- 基板処理のための装置であって、
エッジリングであって、
底面と、
上面と、
中央開口部と、
前記上面に配置された溝と
を含むエッジリングと、
前記溝に配置されたオーバーハングリングであって、更に、
前記溝から上向きに延在する第1の部分と、
前記オーバーハングリングの中心軸に向かって径方向内側に延在する第2の部分と
を含むオーバーハングリングと
を備える装置。 - 前記オーバーハングリングは、前記エッジリングの内半径より小さい内半径を有する、請求項12に記載の装置。
- 前記底面は更に、
内側底面と、
前記内側底面の外側エッジに接続された下部段差面と、
前記下部段差面の内側底面とは反対側の端部に接続された一次底面と、
前記一次底面の外側エッジに接続された内側レッジ面と
を含む、請求項12に記載の装置。 - 溝の底面は、前記内側底面から垂直方向約1mmから約5mmに配置される、請求項14に記載の装置。
- 第2の部分は、前記溝の底面から約10mmから約30mmである、請求項14に記載の装置。
- 前記溝の幅は約15mm未満である、請求項12に記載の装置。
- 基板処理のための装置であって、
エッジリングであって、更に、
支持面と、
上面と、
前記上面に配置された溝と、
前記上面に配置された複数のタブと
を含むエッジリングと、
前記溝に配置されたオーバーハングリングであって、更に、
前記溝から延在する第1の部分と、
前記第1の部分に接続され、径方向内側に延在する第2の部分と
を含むオーバーハングリングと
を備える装置。 - 前記エッジリング及び前記オーバーハングリングは、石英材料を含む、請求項18に記載の装置。
- 前記溝は、前記オーバーハングリングの第1の部分とほぼ同じ幅である、請求項18に記載の装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2024216209A JP2025041694A (ja) | 2020-07-27 | 2024-12-11 | エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/939,898 US11380575B2 (en) | 2020-07-27 | 2020-07-27 | Film thickness uniformity improvement using edge ring and bias electrode geometry |
US16/939,898 | 2020-07-27 | ||
PCT/US2020/063774 WO2022025959A1 (en) | 2020-07-27 | 2020-12-08 | Film thickness uniformity improvement using edge ring and bias electrode geometry |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2024216209A Division JP2025041694A (ja) | 2020-07-27 | 2024-12-11 | エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023537684A true JP2023537684A (ja) | 2023-09-05 |
JP7604619B2 JP7604619B2 (ja) | 2024-12-23 |
Family
ID=79688590
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2023505370A Active JP7604619B2 (ja) | 2020-07-27 | 2020-12-08 | エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 |
JP2024216209A Pending JP2025041694A (ja) | 2020-07-27 | 2024-12-11 | エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 |
Family Applications After (1)
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JP2024216209A Pending JP2025041694A (ja) | 2020-07-27 | 2024-12-11 | エッジリングとバイアス電極の形状寸法を用いた膜厚均一性の改善 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11380575B2 (ja) |
EP (1) | EP4189723A4 (ja) |
JP (2) | JP7604619B2 (ja) |
KR (2) | KR102802150B1 (ja) |
CN (1) | CN116097392A (ja) |
TW (1) | TW202205333A (ja) |
WO (1) | WO2022025959A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11380575B2 (en) * | 2020-07-27 | 2022-07-05 | Applied Materials, Inc. | Film thickness uniformity improvement using edge ring and bias electrode geometry |
CN118679562A (zh) * | 2022-02-09 | 2024-09-20 | 朗姆研究公司 | 晶片边缘倾斜和蚀刻速率均匀性 |
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JP3247079B2 (ja) * | 1997-02-06 | 2002-01-15 | 松下電器産業株式会社 | エッチング方法及びエッチング装置 |
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JP2004165645A (ja) * | 2002-10-17 | 2004-06-10 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
TWI354320B (en) * | 2006-02-21 | 2011-12-11 | Nuflare Technology Inc | Vopor phase deposition apparatus and support table |
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US11380575B2 (en) * | 2020-07-27 | 2022-07-05 | Applied Materials, Inc. | Film thickness uniformity improvement using edge ring and bias electrode geometry |
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-
2020
- 2020-07-27 US US16/939,898 patent/US11380575B2/en active Active
- 2020-12-08 EP EP20946791.9A patent/EP4189723A4/en active Pending
- 2020-12-08 JP JP2023505370A patent/JP7604619B2/ja active Active
- 2020-12-08 KR KR1020237003472A patent/KR102802150B1/ko active Active
- 2020-12-08 KR KR1020257013575A patent/KR20250065718A/ko active Pending
- 2020-12-08 WO PCT/US2020/063774 patent/WO2022025959A1/en active Application Filing
- 2020-12-08 CN CN202080103962.3A patent/CN116097392A/zh active Pending
-
2021
- 2021-02-18 TW TW110105464A patent/TW202205333A/zh unknown
-
2022
- 2022-06-06 US US17/832,775 patent/US12266560B2/en active Active
-
2024
- 2024-12-11 JP JP2024216209A patent/JP2025041694A/ja active Pending
Also Published As
Publication number | Publication date |
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KR20230027308A (ko) | 2023-02-27 |
EP4189723A4 (en) | 2024-08-28 |
US20220301920A1 (en) | 2022-09-22 |
JP7604619B2 (ja) | 2024-12-23 |
JP2025041694A (ja) | 2025-03-26 |
EP4189723A1 (en) | 2023-06-07 |
US12266560B2 (en) | 2025-04-01 |
WO2022025959A1 (en) | 2022-02-03 |
KR102802150B1 (ko) | 2025-04-28 |
US20220028656A1 (en) | 2022-01-27 |
CN116097392A (zh) | 2023-05-09 |
TW202205333A (zh) | 2022-02-01 |
KR20250065718A (ko) | 2025-05-13 |
US11380575B2 (en) | 2022-07-05 |
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