JP2023535642A - Semiconductor reaction chamber and semiconductor processing device - Google Patents

Semiconductor reaction chamber and semiconductor processing device Download PDF

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JP2023535642A
JP2023535642A JP2023509533A JP2023509533A JP2023535642A JP 2023535642 A JP2023535642 A JP 2023535642A JP 2023509533 A JP2023509533 A JP 2023509533A JP 2023509533 A JP2023509533 A JP 2023509533A JP 2023535642 A JP2023535642 A JP 2023535642A
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cavity
wiring
air
reaction chamber
functional
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ジィェン リィゥ
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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Abstract

本発明は、半導体反応チャンバおよび半導体加工デバイスを開示する。半導体反応チャンバは、キャビティと、静電チャックと、機能性配線と、気圧調整装置とを含む。キャビティは内キャビティを囲んで形成し、静電チャックは内キャビティに位置し、基体と、基体に設けられる機能層とを含む。基体と機能層とは接着により固定され、基体には配線チャネルが開設される。機能層は配線チャネルの端部開口を覆い、且つ基体とともに配線チャネルを囲んで収容キャビティを形成する。機能性配線は配線チャネルを貫通し、機能層と接触する。気圧調整装置は収容キャビティと連通し、収容キャビティ内の気圧と前記内キャビティ内の気圧とを平衡化させる。本技術案は、半導体反応チャンバ内部と静電チャックの収容キャビティ内部との気圧のアンバランスにより、静電チャックの各部材の接続の確実性が低くなるという課題を解決することができる。The present invention discloses a semiconductor reaction chamber and a semiconductor processing device. A semiconductor reaction chamber includes a cavity, an electrostatic chuck, functional wiring, and an air pressure regulator. A cavity is formed surrounding the inner cavity, and the electrostatic chuck is positioned in the inner cavity and includes a substrate and a functional layer provided on the substrate. The substrate and the functional layer are fixed by adhesion, and wiring channels are opened in the substrate. The functional layer covers the end openings of the wiring channels and surrounds the wiring channels with the substrate to form a receiving cavity. Functional wiring passes through the wiring channel and contacts the functional layer. An air pressure regulator communicates with the receiving cavity and balances the air pressure within the receiving cavity with the air pressure within the inner cavity. This technical solution can solve the problem that the reliability of the connection of each member of the electrostatic chuck is lowered due to the air pressure imbalance between the inside of the semiconductor reaction chamber and the inside of the accommodating cavity of the electrostatic chuck.

Description

本発明は、半導体加工デバイスの技術分野に関し、特に半導体反応チャンバおよび半導体加工デバイスに関する。 The present invention relates to the technical field of semiconductor processing devices, and more particularly to semiconductor reaction chambers and semiconductor processing devices.

静電チャックを含む半導体加工デバイスは、例えばプラズマエッチング、物理蒸着、化学蒸着等の集積回路の製造プロセスに幅広く適用されている。静電チャックは半導体加工デバイスの半導体反応チャンバ内に設けられ、ウェハを固定、支持するとともに、ウェハに直流バイアスを提供し、ウェハの温度を制御することもできる。 Semiconductor processing devices, including electrostatic chucks, are widely applied in integrated circuit fabrication processes such as plasma etching, physical vapor deposition, and chemical vapor deposition. An electrostatic chuck is provided within a semiconductor reaction chamber of a semiconductor processing device to secure and support a wafer, provide a DC bias to the wafer, and may also control the temperature of the wafer.

通常、静電チャックは基体と機能層とを含み、機能層は一般的に接着層により基体に固定される。当該基体には、機能性配線が貫通するための複数の配線チャネルが設けられることで、当該機能性配線を機能層と接触させることができる。当該機能性配線は、例えば検出配線および制御配線等を含む。温度検出装置は、当該検出配線により、静電チャック上に載せられるウェハの温度を検出することができる。制御器は、当該制御配線により機能層における加熱器を制御することで、静電チャック上のウェハの温度を制御することを実現できる。 An electrostatic chuck typically includes a substrate and a functional layer, with the functional layer generally secured to the substrate by an adhesive layer. The substrate is provided with a plurality of wiring channels through which the functional wiring passes so that the functional wiring can be brought into contact with the functional layer. The functional wiring includes, for example, detection wiring and control wiring. The temperature detection device can detect the temperature of the wafer placed on the electrostatic chuck through the detection wiring. The controller can control the temperature of the wafer on the electrostatic chuck by controlling the heater in the functional layer through the control wiring.

しかし、具体的な作業プロセスにおいて、半導体加工デバイスにおける半導体反応チャンバ内部は通常、真空状態にあり、基体における上記配線チャネル内は大気圧状態にある。
チャンバ内部と配線チャネルとの圧力差が静電チャックの複数の部材に対して力の作用を生じることにより、基体と機能層との接着性が損なわれやすく、静電チャック全体の取り付け効果にも影響を与える。 However, in a specific working process, the inside of the semiconductor reaction chamber in the semiconductor processing device is usually in a vacuum state, and the inside of the wiring channel in the substrate is in an atmospheric pressure state.
Due to the pressure difference between the inside of the chamber and the wiring channel, the force acts on multiple members of the electrostatic chuck, which can easily damage the adhesion between the substrate and the functional layer, and also affect the mounting effect of the entire electrostatic chuck. influence.

本発明は、半導体反応チャンバ内部と静電チャックの収容キャビティ内部との気圧の不均衡により、静電チャックの各部材の接続の確実性が低くなるという課題を解決する半導体反応チャンバおよび半導体加工デバイスを開示する。 The present invention is a semiconductor reaction chamber and a semiconductor processing device that solve the problem that the connection reliability of each member of an electrostatic chuck is lowered due to an air pressure imbalance between the inside of the semiconductor reaction chamber and the inside of the accommodation cavity of the electrostatic chuck. disclose.

上記課題を解決するために、本発明は、内キャビティを囲んで形成するキャビティと、前記内キャビティに位置し、基体と、前記基体に設けられる機能層とを含む静電チャックであって、前記基体と前記機能層とは接着により固定され、前記基体には配線チャネルが開設され、前記機能層は前記配線チャネルの端部開口を覆い、且つ前記基体とともに前記配線チャネルを囲んで収容キャビティを形成する静電チャックと、前記配線チャネルを貫通し、前記機能層と接触する機能性配線と、前記収容キャビティと連通し、前記収容キャビティ内の気圧と前記内キャビティ内の気圧とを平衡化させる気圧調整装置と、を含む半導体反応チャンバを用いる。 In order to solve the above problems, the present invention provides an electrostatic chuck including a cavity surrounding an inner cavity, a base positioned in the inner cavity, and a functional layer provided on the base, wherein the The substrate and the functional layer are fixed by adhesion, the substrate has a wiring channel, the functional layer covers the end opening of the wiring channel, and surrounds the wiring channel together with the substrate to form an accommodation cavity. a functional wiring that passes through the wiring channel and is in contact with the functional layer; and an air pressure that communicates with the housing cavity and balances the air pressure in the housing cavity and the air pressure in the inner cavity. A semiconductor reaction chamber including a conditioning device is used.

また、本発明は、上記半導体反応チャンバを含む半導体加工デバイスを用いる。 The present invention also uses a semiconductor processing device including the above semiconductor reaction chamber.

本発明が用いる技術案は、本発明の実施例により開示された半導体反応チャンバおよび半導体加工デバイスの技術案において、収容キャビティと連通する気圧調整装置により、収容キャビティ内の気圧と内キャビティ内の気圧とを平衡化することで、収容キャビティ内の気圧を内キャビティ内の気圧と同等にすることができ、それにより内キャビティと収容キャビティとに圧力差が存在することで基体と機能層との接着性が損なわれることを避けることができ、基体と機能層との接続の安定性を高め、静電チャックの耐用年数を増加させることができるという有益な効果を達することができる。 The technical solution used in the present invention is the technical solution of the semiconductor reaction chamber and the semiconductor processing device disclosed in the embodiments of the present invention. By balancing the air pressure in the housing cavity and the air pressure in the inner cavity, the pressure difference between the inner cavity and the housing cavity causes adhesion between the substrate and the functional layer. It is possible to avoid deterioration of the properties, improve the stability of the connection between the substrate and the functional layer, and increase the useful life of the electrostatic chuck.

ここで説明する図面は、本発明に対するさらなる理解を提供するものであり、本発明の一部を構成するものである。
本発明の模式的な実施例およびその説明は本発明を説明するものであり、本発明に対する不適切な限定を構成するものではない。 The drawings described herein provide a further understanding of the invention and form a part thereof.
The exemplary embodiments of the invention and their description are illustrative of the invention and do not constitute undue limitations on the invention.

図１は、本発明の実施例により開示される半導体反応チャンバの断面図である。FIG. 1 is a cross-sectional view of a semiconductor reaction chamber disclosed according to embodiments of the present invention. 図２は、本発明の実施例により開示される半導体反応チャンバの一部断面図である。FIG. 2 is a partial cross-sectional view of a semiconductor reaction chamber disclosed according to an embodiment of the invention. 図３は、本発明の実施例により開示される半導体反応チャンバにおける静電チャックの構造模式図である。FIG. 3 is a structural schematic diagram of an electrostatic chuck in a semiconductor reaction chamber disclosed by an embodiment of the present invention. 図４は、図３の別の視角における構造模式図である。FIG. 4 is a structural schematic diagram of FIG. 3 at another viewing angle. 図５は、本発明の実施例により開示される半導体反応チャンバにおける接続フランジの断面図である。FIG. 5 is a cross-sectional view of a connection flange in a semiconductor reaction chamber disclosed according to embodiments of the present invention.

本発明の目的、技術案および利点をさらに明確にするために、以下に本発明の具体的な実施例および相応の図面を組み合わせて、本発明の技術案を明確、且つ完全に説明する。また、説明される実施例は本発明の一部の実施例にすぎず、すべての実施例でないことは明らかである。本発明における実施例に基づき、当業者が創造的な作業を行わない前提で得られるすべての他の実施例は、いずれも本発明の保護範囲に属する。 In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in combination with the specific embodiments of the present invention and the corresponding drawings. Also, it should be apparent that the described embodiments are only some, but not all embodiments of the present invention. All other embodiments obtained by persons skilled in the art based on the embodiments in the present invention without creative work shall fall within the protection scope of the present invention.

以下、図面を組み合わせて、本発明の各実施例により開示される技術案を詳細に説明する。 Hereinafter, technical solutions disclosed by each embodiment of the present invention will be described in detail in combination with drawings.

図１～図５に示すように、本発明の実施例は半導体反応チャンバを開示する。開示された半導体反応チャンバは、半導体加工デバイスに適用され、キャビティ１００と、静電チャック２００と、機能性配線３００と、気圧調整装置とを含む。 As shown in FIGS. 1-5, embodiments of the present invention disclose a semiconductor reaction chamber. The disclosed semiconductor reaction chamber is applied to a semiconductor processing device and includes a cavity 100, an electrostatic chuck 200, functional wiring 300, and an air pressure regulator.

キャビティ１００は、内キャビティ１１０を囲んで形成し、当該内キャビティ１１０内でウェハを加工する。具体的に、図１に示すように、キャビティ１００の頂部に内キャビティ１１０と連通するノズル１２０が開設され、プロセスガスはノズル１２０により内キャビティ１１０に流入することができる。プロセスガスは、内キャビティ１１０においてウェハと物理化学反応を生じることで、ウェハに対する加工を完了する。 A cavity 100 is formed surrounding an inner cavity 110, and a wafer is processed in the inner cavity 110 concerned. Specifically, as shown in FIG. 1 , a nozzle 120 communicating with the inner cavity 110 is provided at the top of the cavity 100 , and the process gas can flow into the inner cavity 110 through the nozzle 120 . The process gas causes physicochemical reactions with the wafer in the inner cavity 110 to complete the processing of the wafer.

図１に示すように、静電チャック２００は内キャビティ１１０に位置し、ウェハを支持し、固定する。具体的に、静電チャック２００は、静電吸着の方式を用いて、ウェハに対する固定を実現する。いくつかの選択的な実施例において、静電チャック２００の下方には下部電極ケース９００が設けられ、当該下部電極ケース９００は静電チャック２００を支持し、機能性配線３００およびその他の構成部材に取り付けの基礎を提供する。 As shown in FIG. 1, electrostatic chuck 200 is positioned in inner cavity 110 to support and secure the wafer. Specifically, the electrostatic chuck 200 implements fixation to the wafer using an electrostatic adsorption method. In some optional embodiments, a lower electrode case 900 is provided below the electrostatic chuck 200, the lower electrode case 900 supports the electrostatic chuck 200, and accommodates the functional wiring 300 and other components. Provides a basis for mounting.

図２に示すように、静電チャック２００は、基体２１０と、基体２１０に設けられる機能層とを含み、基体２１０は機能層に取り付け位置を提供することができる。具体的に、基体２１０と機能層とは接着により固定され、例えば、基体２１０と機能層とは強力接着剤、またはホットメルト接着剤等の接着剤により接着される。基体２１０には配線チャネル２１１が開設され、機能層は当該配線チャネル２１１の端部開口を覆い、基体２１０とともに配線チャネル２１１を囲んで収容キャビティを形成する。機能性配線３００は配線チャネル２１１を貫通し、機能層の、配線チャネル２１１の端部開口に露出する部分と接触する。具体的に、図１および図２に示すように、機能性配線３００の一端はキャビティ１００の外部に位置し、外部の例えば制御器、温度検出装置等のデバイスと相互に接続される。機能性配線３００の他端は配線チャネル２１１を貫通し、機能層と接触することで、キャビティ１００の外部に位置するデバイスが機能性配線３００により静電チャック２００の表面のウェハに対して加熱、温度検出等の操作を実現することができる。選択的に、配線チャネル２１１の数は複数であってよく、異なる機能性配線３００が異なる配線チャネル２１１を貫通することで、上記操作を同時に実行させ、且つ相互干渉を避けることができる。 As shown in FIG. 2, the electrostatic chuck 200 includes a substrate 210 and a functional layer provided on the substrate 210, where the substrate 210 can provide attachment locations for the functional layer. Specifically, the substrate 210 and the functional layer are fixed by adhesion. For example, the substrate 210 and the functional layer are adhered by an adhesive such as a strong adhesive or a hot-melt adhesive. A wiring channel 211 is formed in the substrate 210, and the functional layer covers the end opening of the wiring channel 211 and surrounds the wiring channel 211 together with the substrate 210 to form an accommodation cavity. The functional wiring 300 passes through the wiring channel 211 and contacts the portion of the functional layer exposed at the end opening of the wiring channel 211 . Specifically, as shown in FIGS. 1 and 2, one end of the functional wiring 300 is positioned outside the cavity 100 and interconnected with external devices such as controllers, temperature detectors, and the like. The other end of the functional wiring 300 passes through the wiring channel 211 and contacts the functional layer, so that the device located outside the cavity 100 is heated by the functional wiring 300 to the wafer on the surface of the electrostatic chuck 200, Operations such as temperature detection can be realized. Alternatively, the number of wiring channels 211 can be plural, and different functional wirings 300 can pass through different wiring channels 211 so that the above operations can be performed simultaneously and mutual interference can be avoided.

気圧調整装置は上記収容キャビティと連通し、当該収容キャビティ内の気圧と内キャビティ内の気圧とを平衡化する。このように、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にすることにより、内キャビティ１１０と収容キャビティとの間に圧力差が存在することで基体２１０と機能層との接着性を損なうことを避けることができ、基体２１０と機能層との接続の安定性を高め、静電チャック２００の耐用年数を増加させることができる。 An air pressure regulator communicates with the receiving cavity to balance the air pressure within the receiving cavity and the air pressure within the inner cavity. In this way, by making the air pressure in the housing cavity equal to the air pressure in the inner cavity 110, the presence of a pressure difference between the inner cavity 110 and the housing cavity reduces the adhesion between the substrate 210 and the functional layer. Damage can be avoided, the stability of the connection between the substrate 210 and the functional layer can be enhanced, and the service life of the electrostatic chuck 200 can be increased.

いくつかの選択的な実施例において、上記気圧調整装置は空気抽出装置４００、および／または空気充填装置５００を含む。気圧調整装置が空気抽出装置４００と空気充填装置５００とを含むことを例に、図２に示すように、空気抽出装置４００は収容キャビティと連通し、収容キャビティを真空にする。具体的に、空気抽出装置４００の空気抽出口は、収容キャビティの開口と密封接続される。この場合、空気抽出装置４００は収容キャビティ内の少なくとも一部の気体を抽出することができ、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にすることができる。ウェハのエッチングプロセスにおいて、内キャビティ１１０は通常、真空状態にある。このとき、空気抽出装置４００をオンにするよう制御することで、収容キャビティ内の空気を抽出し、収容キャビティ内の気圧も真空状態にすることができる。 In some optional embodiments, the air pressure regulating device includes an air extraction device 400 and/or an air charging device 500 . For example, the air pressure regulating device includes an air extraction device 400 and an air filling device 500. As shown in FIG. 2, the air extraction device 400 communicates with the receiving cavity to evacuate the receiving cavity. Specifically, the air extraction port of the air extraction device 400 is sealingly connected with the opening of the receiving cavity. In this case, the air extraction device 400 can extract at least part of the gas inside the accommodation cavity, and the air pressure inside the accommodation cavity can be made equal to the air pressure inside the inner cavity 110 . During the wafer etching process, the inner cavity 110 is normally under vacuum. At this time, by controlling the air extraction device 400 to be turned on, the air inside the accommodation cavity can be extracted and the air pressure inside the accommodation cavity can be brought into a vacuum state.

空気充填装置５００は収容キャビティと連通し、収容キャビティに空気を充填する。具体的に、空気充填装置５００の空気排出口は、収容キャビティの開口と密封接続される。この場合、半導体反応チャンバが非作業状態にあるとき、内キャビティ１１０の気圧は通常、大気圧状態にある。このとき、空気充填装置５００をオンにするよう制御することで、収容キャビティ内に空気を充填し、収容キャビティ内の気圧も大気圧状態にすることができ、収容キャビティ内の気圧を内キャビティ１１０の気圧と同等にすることができる。 The air filling device 500 communicates with the storage cavity and fills the storage cavity with air. Specifically, the air outlet of the air filling device 500 is sealingly connected with the opening of the receiving cavity. In this case, the pressure in the inner cavity 110 is normally at atmospheric pressure when the semiconductor reaction chamber is in a non-working state. At this time, by controlling the air filling device 500 to be turned on, the storage cavity can be filled with air, and the pressure inside the storage cavity can be brought to the atmospheric pressure state. can be equivalent to the atmospheric pressure of

上記作業プロセスにより、本発明の実施例により開示される半導体反応チャンバにおいて、空気抽出装置４００によって、収容キャビティ内の少なくとも一部の空気を抽出する、または空気充填装置５００によって、収容キャビティ内に気体を流入させることで、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にすることができ、それにより内キャビティ１１０と収容キャビティとの間に圧力差が存在することで基体２１０と機能層との接着性が損なわれることを避けることができ、基体２１０と機能層との接続の安定性を高め、静電チャックの耐用年数を増加させることができると理解できる。 According to the above working process, in the semiconductor reaction chamber disclosed by the embodiments of the present invention, the air extracting device 400 extracts at least part of the air in the containing cavity, or the air filling device 500 causes gas to enter the containing cavity. can be made equal to the pressure in the inner cavity 110 by allowing the air pressure in the accommodation cavity to become equal to the air pressure in the inner cavity 110, whereby a pressure difference exists between the inner cavity 110 and the accommodation cavity, causing the substrate 210 and the functional layer It can be understood that it is possible to avoid the deterioration of the adhesiveness with the substrate 210, improve the stability of the connection between the substrate 210 and the functional layer, and increase the service life of the electrostatic chuck.

当然のことながら、上記の状況において、さらに空気抽出装置４００と空気充填装置５００との組み合わせにより、収容キャビティ内の気圧を内キャビティ１１０内の気圧と始終同等にすることもでき、それにより内キャビティ１１０と収容キャビティとの間に圧力差が存在することで静電チャック２００における各部材に対して力の作用が生じることを避けることができ、静電チャック２００における各部材間の取り付けの安定性を高め、静電チャック２００の耐用年数を増加させることができる。実際の運用において、具体的なニーズに応じて、空気抽出装置４００、または空気充填装置５００を単独で設置してもよいことは言うまでもない。 Of course, in the above situation, the combination of the air extraction device 400 and the air filling device 500 can also make the air pressure in the receiving cavity equal to the air pressure in the inner cavity 110 all the time, so that the inner cavity The presence of a pressure difference between 110 and the receiving cavity can avoid acting force on each member in the electrostatic chuck 200, and the stability of attachment between each member in the electrostatic chuck 200 can be avoided. can be increased, and the useful life of the electrostatic chuck 200 can be increased. It goes without saying that in actual operation, the air extraction device 400 or the air filling device 500 may be installed independently according to specific needs.

さらに、配線チャネル２１１の数が複数である場合、１つの空気抽出装置４００は複数の収容キャビティと連通できることで、１つの空気抽出装置４００により、複数の収容キャビティ内の空気を抽出することができ、空気抽出装置４００の利用率を高めることができる。同様に、１つの空気充填装置５００は複数の収容キャビティと連通できることで、１つの空気充填装置５００により、複数の収容キャビティ内に空気を充填することができ、空気充填装置５００の利用率を高めることができる。 Furthermore, when the number of wiring channels 211 is plural, one air extraction device 400 can communicate with multiple accommodation cavities, so that one air extraction device 400 can extract the air in the multiple accommodation cavities. , the utilization rate of the air extraction device 400 can be increased. Similarly, since one air filling device 500 can communicate with a plurality of storage cavities, one air filling device 500 can fill air into a plurality of storage cavities, increasing the utilization rate of the air filling device 500. be able to.

本発明の実施例において、選択的に、図２に示すように、空気抽出装置４００は空気抽出機構４１０と第１の配管４２０とを含んでよく、空気抽出機構４１０は真空ポンプ、またはファンであってよい。空気抽出機構４１０は内キャビティ１１０の外に設けられ、第１の配管４２０により、収容キャビティと連通することができる。この場合、第１の配管４２０は空気抽出機構４１０と収容キャビティとを連通する。具体的に、第１の配管４２０の第１の端は内キャビティ１１０の外に位置し、空気抽出機構４１０の空気抽出口と連通し、第１の配管４２０の第２の端は内キャビティ１００内に伸び、収容キャビティの開口と連通することができる。気体の密封性を確保するために、第１の配管４２０の第１の端は空気抽出機構４１０の空気抽出口と密封接続され、且つ第１の配管４２０の第２の端は空気抽出機構４１０の空気抽出口と密封接続され、気体が漏れて空気抽出機構４１０の空気抽出効果に影響を与えることを防止する。具体的に、第１の配管４２０の第１の端と空気抽出機構４１０の空気抽出口との間、および第１の配管４２０の第２の端と収容キャビティの開口との間には、シーリング材を設けることができ、それにより、より高い密封効果を実現し、空気抽出機構４１０の収容キャビティに対する空気抽出効果をより高くする。 In an embodiment of the present invention, optionally, as shown in FIG. 2, the air extraction device 400 may include an air extraction mechanism 410 and a first pipe 420, and the air extraction mechanism 410 may be a vacuum pump or a fan. It can be. An air extraction mechanism 410 is provided outside the inner cavity 110 and can communicate with the receiving cavity by a first pipe 420 . In this case, the first pipe 420 communicates between the air extraction mechanism 410 and the accommodation cavity. Specifically, the first end of the first pipe 420 is located outside the inner cavity 110 and communicates with the air extraction port of the air extraction mechanism 410 , and the second end of the first pipe 420 is located inside the inner cavity 100 . It can extend inward and communicate with the opening of the receiving cavity. A first end of the first pipe 420 is sealingly connected to the air extraction port of the air extraction mechanism 410, and a second end of the first pipe 420 is connected to the air extraction mechanism 410 to ensure gas tightness. , to prevent gas from leaking and affecting the air extraction effect of the air extraction mechanism 410 . Specifically, between the first end of the first pipe 420 and the air extraction port of the air extraction mechanism 410, and between the second end of the first pipe 420 and the opening of the receiving cavity, sealing A material can be provided to achieve a higher sealing effect and a higher air extraction effect to the receiving cavity of the air extraction mechanism 410 .

また、第１の配管４２０は、空気抽出機構４１０の取り付けの柔軟性をより高くすることができる。具体的に、第１の配管４２０の延在効果により、空気抽出機構４１０をキャビティ１００の外の複数の位置に取り付けることができる。選択的に、第１の配管４２０はフレキシブルパイプであってよく、それにより空気抽出機構４１０の取り付けの柔軟性をさらに高めることができる。 Also, the first pipe 420 allows for greater flexibility in mounting the air extraction mechanism 410 . Specifically, the extension effect of the first pipe 420 allows the air extraction mechanism 410 to be mounted at multiple locations outside the cavity 100 . Alternatively, the first pipe 420 can be a flexible pipe, which can further increase the mounting flexibility of the air extraction mechanism 410 .

さらに、第１の配管４２０には第１の開閉弁４２１を設けることができ、具体的な作業プロセスにおいて、第１の開閉弁４２１が開いている場合、空気抽出機構４１０は第１の配管４２０により、収容キャビティ内の少なくとも一部の空気を抽出し、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にすることができる。第１の開閉弁４２１が閉じている場合、収容キャビティ内の気圧は上記の状態を維持することができる。このような方式は操作しやすく、収容キャビティ内の気圧をより簡単に内キャビティ１１０の気圧と同等にすることができる。 In addition, the first pipe 420 can be provided with a first on-off valve 421. In a specific work process, when the first on-off valve 421 is open, the air extracting mechanism 410 will open the first pipe 420 At least part of the air in the storage cavity can be extracted by the air pressure inside the storage cavity to make the air pressure in the storage cavity equal to the pressure in the inner cavity 110 . When the first on-off valve 421 is closed, the air pressure inside the accommodation cavity can maintain the above state. Such a scheme is easy to operate and allows the air pressure within the receiving cavity to more easily equalize that of the inner cavity 110 .

選択的に、制御しやすいように、第１の開閉弁４２１はキャビティ１００の外に位置する。 Optionally, the first on-off valve 421 is located outside the cavity 100 for easy control.

本発明の実施例において、選択的に、図２に示すように、空気充填装置５００は空気充填機構５１０と、第２の配管５２０とを含むことができる。空気充填機構５１０は例えば窒素供給機構であり、内キャビティ１１０の外に設けられ、第２の配管５２０により収容キャビティと連通することができる。この場合、第２の配管５２０は空気充填機構５１０と収容キャビティとを連通する。具体的に、第２の配管５２０の第１の端は内キャビティ１１０の外に位置して空気充填機構５１０の空気排出口と連通し、第２の配管５２０の第２の端は内キャビティ１００内に伸びて収容キャビティの開口と連通する。気体の密封性を確保するために、第２の配管５２０の第１の端は空気充填機構５１０の空気排出口と密封接続され、第２の配管５２０の第２の端は空気充填機構５１０の空気充填口と密封接続されることで、気体が漏れて空気充填機構５１０の空気充填効果に影響を与えることを防止する。具体的に、第２の配管５２０の第１の端と空気充填機構５１０の空気充填口との間、および第２の配管５２０の第２の端と収容キャビティの開口との間には、シーリング材を設けることができ、それにより、より高い密封効果を実現し、空気充填機構５１０の収容キャビティに対する空気抽出効果をより高くする。 Optionally, in an embodiment of the present invention, the air filling device 500 may include an air filling mechanism 510 and a second pipe 520, as shown in FIG. The air filling mechanism 510 is, for example, a nitrogen supply mechanism, is provided outside the inner cavity 110 and can be communicated with the housing cavity by a second pipe 520 . In this case, the second pipe 520 communicates between the air charging mechanism 510 and the accommodation cavity. Specifically, the first end of the second pipe 520 is located outside the inner cavity 110 and communicates with the air outlet of the air charging mechanism 510 , and the second end of the second pipe 520 is positioned outside the inner cavity 110 . extends inwardly to communicate with the opening of the receiving cavity. In order to ensure gas tightness, the first end of the second pipe 520 is sealingly connected to the air outlet of the air filling mechanism 510, and the second end of the second pipe 520 is connected to the air filling mechanism 510. The sealing connection with the air filling port prevents gas from leaking and affecting the air filling effect of the air filling mechanism 510 . Specifically, between the first end of the second pipe 520 and the air filling port of the air filling mechanism 510, and between the second end of the second pipe 520 and the opening of the receiving cavity, sealing A material can be provided to achieve a higher sealing effect and a higher air extraction effect to the receiving cavity of the air filling mechanism 510 .

また、第２の配管５２０は、空気充填機構５１０の取り付けの柔軟性をより高くすることもできる。具体的に、第２の配管５２０の延在効果により、空気充填機構５１０をキャビティ１００の外の複数の位置に取り付けることができる。選択的に、第２の配管５２０はフレキシブルパイプであってよく、それにより空気充填機構５１０の取り付けの柔軟性をさらに高めることができる。 In addition, the second pipe 520 can also make the installation of the air filling mechanism 510 more flexible. Specifically, due to the extension effect of the second pipe 520 , the air filling mechanism 510 can be attached to multiple positions outside the cavity 100 . Alternatively, the second pipe 520 can be a flexible pipe, which can further increase the mounting flexibility of the air filling mechanism 510 .

さらに、第２の配管５２０には第２の開閉弁５２１を設けることができ、具体的な作業プロセスにおいて、第２の開閉弁５２１が開いている場合、空気充填機構５１０は第２の配管５２０により、収容キャビティ内に空気を充填し、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にすることができる。第２の開閉弁５２１が閉じている場合、収容キャビティ内の気圧は上記の状態を維持することができる。このような方式は操作しやすく、収容キャビティ内の気圧をより簡単に内キャビティ１１０内の気圧と同等にすることができる。 In addition, the second pipe 520 can be provided with a second on-off valve 521, and in a specific work process, when the second on-off valve 521 is open, the air charging mechanism 510 will open the second pipe 520 Thus, the storage cavity can be filled with air, and the pressure inside the storage cavity can be made equal to the pressure inside the inner cavity 110 . When the second on-off valve 521 is closed, the air pressure inside the accommodation cavity can maintain the above state. Such a scheme is easy to operate and allows the air pressure in the receiving cavity to more easily equalize the air pressure in the inner cavity 110 .

選択的に、制御しやすいように、第２の開閉弁５２１はキャビティ１００の外に位置する。 Optionally, the second on-off valve 521 is located outside the cavity 100 for easy control.

本発明の実施例により開示される半導体反応チャンバは、収容キャビティと連通し、収容キャビティ内の気圧の大きさを検出する圧力検出装置４３０をさらに含む。具体的な作業プロセスにおいて、圧力検出装置４３０は例えば検出したデータを表示でき、それにより作業員は空気抽出機構４１０と空気充填機構５１０とを作業するよう制御することで、収容キャビティ内の気圧を内キャビティ１１０内の気圧と同等にしやすくなる。このような方式は作業員にとって操作しやすく、作業員が収容キャビティ内の気圧の大きさを容易に調整できることにより、収容キャビティ内の気圧と内キャビティ１１０内の気圧とを同等にしやすくなる。 The semiconductor reaction chamber disclosed according to embodiments of the present invention further includes a pressure sensing device 430 communicating with the containing cavity and detecting the magnitude of the air pressure within the containing cavity. In the specific work process, the pressure detection device 430 can display the detected data, for example, so that the operator can control the air extraction mechanism 410 and the air filling mechanism 510 to work, thereby adjusting the air pressure in the receiving cavity. It becomes easy to equalize the air pressure in the inner cavity 110 . Such a system is easy for the operator to operate, and the operator can easily adjust the magnitude of the air pressure inside the accommodation cavity, so that the air pressure inside the accommodation cavity and the air pressure inside the inner cavity 110 can be easily equalized.

本発明の実施例により開示される半導体反応チャンバは、下部電極ケース９００内に設けられる取り付け部６００をさらに含む。基体２１０は取り付け部６００に設けられ、取り付け部６００は静電チャック２００の取り付けがしやすい。それとともに、取り付け部６００には収容キャビティと連通する取り付け孔６１０が開設される。 The semiconductor reaction chamber disclosed according to embodiments of the present invention further includes a mounting portion 600 provided within the lower electrode case 900 . The substrate 210 is provided on the mounting portion 600 , and the mounting portion 600 facilitates mounting of the electrostatic chuck 200 . Along with this, the mounting portion 600 is provided with a mounting hole 610 that communicates with the receiving cavity.

取り付け孔６１０は収容キャビティの開口と密封接続され、空気抽出装置４００は取り付け孔６１０によって収容キャビティと連通し、空気抽出装置４００の空気抽出口と取り付け孔６１０とが密封接続されることで、気体が漏れて空気抽出装置４００の空気抽出効果に影響を与えることを防止する。この場合、取り付け部６００は空気抽出装置４００を収容キャビティとさらに容易に連通させることができ、それにより上記部材の取り付けが容易になる。 The mounting hole 610 is sealingly connected with the opening of the housing cavity, the air extraction device 400 is communicated with the housing cavity through the mounting hole 610, and the air extraction port of the air extraction device 400 and the mounting hole 610 are sealingly connected, so that the gas is prevent leaking and affecting the air extraction effect of the air extraction device 400. In this case, the mounting portion 600 can more easily communicate the air extraction device 400 with the receiving cavity, thereby facilitating the mounting of the member.

相応に、空気充填装置５００は取り付け孔６１０によって収容キャビティと連通し、空気充填装置５００の空気抽出口と取り付け孔６１０とが密封接続されることで、気体が漏れて空気充填装置５００の空気充填効果に影響を与えることを防止する。この場合、取り付け部６００は空気充填装置５００を収容キャビティとさらに容易に連通させることができ、それにより上記部材の取り付けが容易になる。 Correspondingly, the air filling device 500 communicates with the receiving cavity through the mounting hole 610, and the air outlet of the air filling device 500 and the mounting hole 610 are sealingly connected so that the gas leaks and the air filling device 500 is filled with air. Prevents it from affecting effects. In this case, the mounting portion 600 can more easily communicate the air filling device 500 with the receiving cavity, thereby facilitating the mounting of the member.

なお、気圧調整装置が空気抽出装置４００と空気充填装置５００とを含む場合、空気抽出装置４００と空気充填装置５００とは、それぞれ２つの取り付け孔６１０によって収容キャビティと連通してもよい。 In addition, when the atmospheric pressure adjustment device includes the air extraction device 400 and the air filling device 500, the air extraction device 400 and the air filling device 500 may communicate with the accommodation cavity through two mounting holes 610, respectively.

さらに、選択的な方案において、本発明の実施例により開示される半導体反応チャンバは、接続フランジ７００をさらに含む。接続フランジ７００は取り付け部６００の静電チャック２００から離れた側に設けられ、接続フランジ７００には気体通路７１０が開設される。気体通路７１０は取り付け孔６１０と連通し、取り付け孔６１０と密封接続される。空気抽出装置４００は気体通路７１０と連通し、空気抽出装置４００の空気抽出口と気体通路７１０とは密封接続される。この場合、空気抽出装置４００は気体通路７１０、取り付け孔６１０を順に介して、収容キャビティと連通する。接続フランジ７００により、機能性配線をより取り付けやすくし、空気抽出装置４００と収容キャビティとの接続の安定性を高め、収容キャビティ内の気圧に対する調整効果を高めることができる。 Moreover, in an optional manner, the semiconductor reaction chamber disclosed by the embodiments of the present invention further includes a connection flange 700 . A connection flange 700 is provided on the side of the mounting portion 600 away from the electrostatic chuck 200 , and a gas passage 710 is opened in the connection flange 700 . The gas passage 710 communicates with the mounting hole 610 and is sealingly connected with the mounting hole 610 . The air extraction device 400 communicates with the gas passage 710, and the air extraction port of the air extraction device 400 and the gas passage 710 are hermetically connected. In this case, the air extraction device 400 communicates with the receiving cavity through the gas passage 710 and the mounting hole 610 in that order. The connection flange 700 makes it easier to attach the functional wiring, increases the stability of the connection between the air extraction device 400 and the accommodation cavity, and enhances the effect of adjusting the air pressure inside the accommodation cavity.

同様に、空気充填装置５００も気体通路７１０と連通し、空気充填装置５００の空気充填口と気体通路７１０とは密封接続される。この場合、空気充填装置５００は気体通路７１０、取り付け孔６１０を順に介して、収容キャビティと連通する。接続フランジ７００により、機能性配線をより取り付けやすくし、空気充填装置５００と収容キャビティとの接続の安定性を高め、収容キャビティ内の気圧に対する調整効果を高めることができる。 Similarly, the air filling device 500 also communicates with the gas passage 710, and the air filling port of the air filling device 500 and the gas passage 710 are hermetically connected. In this case, the air filling device 500 communicates with the accommodation cavity through the gas passage 710 and the mounting hole 610 in this order. The connection flange 700 makes it easier to attach the functional wiring, enhances the stability of the connection between the air filling device 500 and the accommodation cavity, and enhances the effect of adjusting the air pressure inside the accommodation cavity.

なお、気圧調整装置が空気抽出装置４００と、空気充填装置５００とを含む場合、取り付け孔６１０と気体通路７１０とはそれぞれ２つであり、対応して設けられる。 When the air pressure adjustment device includes the air extraction device 400 and the air filling device 500, there are two mounting holes 610 and two gas passages 710, which are provided correspondingly.

選択的な方案において、図２に示すように、収容キャビティ内の機能性配線３００を出しやすくするために、接続フランジ７００の側壁には気体通路７１０と連通する配線通し孔７４０が開設され、機能性配線３００は配線通し孔７４０を介して伸出する。このような方式は、機能性配線３００が伸出プロセスにおいて空気抽出装置４００、または空気充填装置５００と接続フランジ７００との連通効果に影響を与えることを防止できる。当然のことながら、機能性配線３００と配線通し孔７４０とは密封接続され、それにより気体が漏れて空気抽出、または空気充填の効果に影響を与えることを防止する。 Alternatively, as shown in FIG. 2, a wiring hole 740 communicating with the gas passage 710 is formed in the side wall of the connecting flange 700 to facilitate the functional wiring 300 in the receiving cavity. The electrical wiring 300 extends through the wiring through hole 740 . Such a method can prevent the functional wiring 300 from affecting the communication effect between the air extraction device 400 or the air filling device 500 and the connection flange 700 in the extending process. Naturally, the functional wiring 300 and the wiring through-hole 740 are hermetically connected, so as to prevent gas from leaking out and affecting the effect of air extraction or air filling.

選択的な方案において、気圧調整装置が空気抽出装置４００と空気充填装置５００とを含み、収容キャビティが２つであることを例に、図２に示すように、空気抽出装置４００における第１の配管４２０と空気充填装置５００における第２の配管５２０とは、接続配管４５０によって相互に連通する。この場合、空気抽出機構４１０は第１の配管４２０と接続配管４５０とによって、２つの気体通路７１０とそれぞれ連通する。それにより、２つの収容キャビティ内の空気を抽出し、空気抽出装置４００の利用率を高めることができる。同様に、空気充填装置５００は第２の配管５２０と接続配管４５０とによって、２つの気体通路７１０とそれぞれ連通する。それにより、２つの収容キャビティ内に空気を充填し、空気充填装置５００の利用率を高めることができる。当然のことながら、実際の運用において、他の配管構造を用いて、１つの空気抽出装置４００と複数の収容キャビティとの連通を実現し、１つの空気充填装置５００と複数の収容キャビティとの連通を実現してもよい。 In an alternative solution, the air pressure regulating device includes an air extraction device 400 and an air filling device 500, for example, there are two receiving cavities, as shown in FIG. The pipe 420 and the second pipe 520 in the air filling device 500 communicate with each other through a connection pipe 450 . In this case, the air extraction mechanism 410 communicates with the two gas passages 710 through the first pipe 420 and the connecting pipe 450, respectively. Thereby, the air in the two receiving cavities can be extracted and the utilization rate of the air extraction device 400 can be increased. Similarly, the air filling device 500 communicates with the two gas passages 710 through the second pipe 520 and the connecting pipe 450, respectively. Thereby, air can be filled in the two accommodation cavities, and the utilization rate of the air filling device 500 can be increased. Of course, in actual operation, other piping structures are used to achieve communication between one air extraction device 400 and multiple storage cavities, and communication between one air filling device 500 and multiple storage cavities. may be realized.

選択的に、本発明の実施例により開示される半導体反応チャンバは、シールリング（図示せず）をさらに含む。シールリングは、取り付け部６００と接続フランジ７００との互いに対向する表面の間に設けられ、且つ取り付け孔６１０周りに設けられ、気体通路７１０と取り付け孔６１０とをシールリングにより密封接続する。このような場合、シールリングは気体通路７１０と取り付け孔６１０との間の密封効果をより高め、空気が取り付け部６００と接続フランジ７００との間の隙間から漏れることを防止できる。上記シールリングの数は、気体通路７１０および取り付け孔６１０のそれぞれの数と同一であり、一対一で対応して設けられる。 Optionally, the semiconductor reaction chamber disclosed by embodiments of the present invention further includes a seal ring (not shown). A sealing ring is provided between the facing surfaces of the mounting portion 600 and the connecting flange 700 and around the mounting hole 610 to sealingly connect the gas passage 710 and the mounting hole 610 with the sealing ring. In such a case, the sealing ring can further enhance the sealing effect between the gas passage 710 and the mounting hole 610 and prevent air from leaking through the gap between the mounting portion 600 and the connecting flange 700 . The number of seal rings is the same as the number of gas passages 710 and mounting holes 610, and they are provided in one-to-one correspondence.

さらに、シールリングの取り付け効果を高めるために、取り付け部６００の接続フランジ７００に向かう側に、環状凹溝６２０を開設してもよい。環状凹溝６２０は取り付け孔６１０周りに設けられ、シールリングの一部は環状凹溝６２０内に位置する。このような場合、環状凹溝６２０はシールリングに対して位置制限の作用を奏し、それによりシールリングがずれて気体通路７１０と取り付け孔６１０との間の密封効果に影響を与えることを防止する。 In addition, an annular groove 620 may be formed on the side of the mounting portion 600 facing the connecting flange 700 to enhance the mounting effect of the seal ring. An annular groove 620 is provided around the mounting hole 610 and a portion of the seal ring is located within the annular groove 620 . In such a case, the annular groove 620 acts as a position limit for the seal ring, thereby preventing the seal ring from slipping and affecting the sealing effect between the gas passage 710 and the mounting hole 610. .

当然のことながら、接続フランジ７００と取り付け部６００との接続方式は多種類であってよく、例えば、接着、係合接続、および締結ネジの接続等であってよい。選択的に、本発明の実施例に開示される半導体反応チャンバは締結ネジを含んでもよく、接続フランジ７００は相互に接続される本体部７２０と、接続部７３０とを含んでよく、上記シールリングは取り付け部６００と接続部７３０との互いに対向する表面の間に設けられ、且つ取り付け孔６１０周りに設けられる。図５を参照し、接続部７３０には第１の貫通孔７３１が開設され、取り付け部６００にはネジ穴が開設され、締結ネジは第１の貫通孔７３１を貫通し、ネジ穴とネジ結合することができる。他の接続方式と比べて、このような方式は接続フランジ７００と取り付け部６００との接続の確実性を高めるだけでなく、接続フランジ７００と取り付け部６００との間にシールリングを設ける場合、締結ネジを締めることにより、シールリングを押圧して、気体通路７１０と取り付け孔６１０との密封効果をより高くできる。選択的に、シールリングは柔軟性部材であってよく、それにより気体通路７１０と取り付け孔６１０との密封効果をさらに高めることができる。 Of course, the connecting flange 700 and the mounting portion 600 may be connected in many ways, such as adhesion, engagement connection, and fastening screw connection. Alternatively, the semiconductor reaction chamber disclosed in the embodiments of the present invention may include fastening screws, the connection flange 700 may include a body portion 720 and a connection portion 730, which are connected to each other, and the seal ring is provided between the facing surfaces of mounting portion 600 and connecting portion 730 and around mounting hole 610 . Referring to FIG. 5, the connecting portion 730 has a first through hole 731, the mounting portion 600 has a screw hole, the fastening screw passes through the first through hole 731, and is coupled with the screw hole. can do. Compared with other connection methods, this method not only enhances the reliability of the connection between the connection flange 700 and the mounting part 600, but also provides a seal ring between the connection flange 700 and the mounting part 600, which makes it easier to fasten. By tightening the screw, the seal ring is pressed and the sealing effect between the gas passage 710 and the mounting hole 610 can be enhanced. Alternatively, the sealing ring can be a flexible member, which can further enhance the sealing effect between the gas passage 710 and the mounting hole 610 .

本発明の実施例において、図３に示すように、機能層は例えばセラミック層２２０と、加熱層２３０とを含む。具体的に、セラミック層２２０は加熱層２３０上に設けられ、加熱層２３０は基体２１０上に設けられ、セラミック層２２０、加熱層２３０、および基体２１０の三者は、いずれも接着の方式により順に固定接続される。この場合、図２および図４に示すように、加熱層２３０は配線チャネル２１１の端部開口を覆い、基体２１０とともに収容空間を囲んで形成することができる。機能性配線３００は制御配線を含み、当該制御配線の一端は第１のデバイス８１０と接続され、制御配線の他端は配線チャネル２１１を貫通し、加熱層２３０と電気的に接続される。第１のデバイス８１０は、加熱層２３０がセラミック層２２０の表面上に置かれるウェハを加熱するように、上記制御配線により加熱層２３０を制御する。この場合、上記制御配線は加熱層２３０と第１のデバイス８１０との導通を実現し、それにより第１のデバイス８１０はウェハを加熱するよう加熱層２３０を制御しやすくなる。上記第１のデバイス８１０は例えば加熱パワー調整装置と、制御器とを含む。 In an embodiment of the invention, the functional layers include, for example, a ceramic layer 220 and a heating layer 230, as shown in FIG. Specifically, the ceramic layer 220 is provided on the heating layer 230, the heating layer 230 is provided on the substrate 210, and the ceramic layer 220, the heating layer 230, and the substrate 210 are all bonded in order by bonding. Fixed connection. In this case, as shown in FIGS. 2 and 4, the heating layer 230 can be formed to cover the end openings of the wiring channels 211 and surround the housing space together with the substrate 210 . The functional wiring 300 includes a control wiring, one end of which is connected with the first device 810 and the other end of which passes through the wiring channel 211 and is electrically connected with the heating layer 230 . A first device 810 controls the heating layer 230 via the control wiring described above such that the heating layer 230 heats a wafer placed on the surface of the ceramic layer 220 . In this case, the control wiring provides electrical continuity between the heating layer 230 and the first device 810, thereby facilitating the first device 810 to control the heating layer 230 to heat the wafer. The first device 810 includes, for example, a heating power regulator and a controller.

および／または、静電チャック２００が順に接続されたセラミック層２２０、加熱層２３０、および基体２１０を含む場合、セラミック層２２０、加熱層２３０、および基体２１０の接続方式は上記実施例と同一であり、重複する説明は省略する。機能性配線３００は検出配線を含み、相応に加熱層２３０には配線チャネル２１１と連通する第２の貫通孔２３１が開設される。この場合、第２の貫通孔２３１は収容キャビティと連通し、上記検出配線の一端は第２のデバイス８２０と相互に接続され、検出配線の他端は配線チャネル２１１および第２の貫通孔２３１を順に貫通し、セラミック層２２０と接触することができる。この場合、第２のデバイス８２０は、例えば温度センサを含み（または温度センサと制御器とを含み）、上記検出配線は当該温度センサの検出配線であってよく、当該温度センサは例えば熱電対、または温度測定用光ファイバであり、収容キャビティは温度センサの検出配線を通過させることができることにより、ウェハに対する温度測定を実現できる。 And/or, if the electrostatic chuck 200 includes the ceramic layer 220, the heating layer 230, and the substrate 210, which are connected in sequence, the method of connecting the ceramic layer 220, the heating layer 230, and the substrate 210 is the same as in the above embodiments. , overlapping explanations will be omitted. The functional wiring 300 includes sensing wiring, and correspondingly, the heating layer 230 is opened with a second through hole 231 communicating with the wiring channel 211 . In this case, the second through-hole 231 communicates with the receiving cavity, one end of the sensing wire is interconnected with the second device 820, and the other end of the sensing wire passes through the wiring channel 211 and the second through-hole 231. It can in turn penetrate and contact the ceramic layer 220 . In this case, the second device 820 includes, for example, a temperature sensor (or includes a temperature sensor and a controller), and the sensing wiring may be the sensing wiring of the temperature sensor, the temperature sensor being, for example, a thermocouple, Alternatively, it is an optical fiber for temperature measurement, and the housing cavity allows the detection wiring of the temperature sensor to pass through, thereby realizing temperature measurement for the wafer.

上記実施例における第１のデバイス８１０と第２のデバイス８２０とは、いずれもキャビティ１００の外に位置し、機能性配線３００の一端は第１のデバイス８１０、および／または第２のデバイス８２０と電気的に接続され、機能性配線３００の他端は内キャビティ内に伸び、配線チャネル２１１に進入して機能層と接触する。なお、機能性配線３００が検出配線、例えば温度センサの検出配線を含む場合、機能層と機能性配線３００との接触とは、具体的に当該検出配線と機能層におけるセラミック層２２０との接触を指す。機能性配線３００が制御配線を含む場合、機能層と機能性配線３００との接触とは、具体的に当該制御配線と機能層における加熱層２３０との電気的接続を指す。実際の運用において、異なるタイプの機能性配線３００は、機能層との接触方式を適応的に変更することができることは言うまでもなく、本発明はこれに対して特に限定しない。 Both the first device 810 and the second device 820 in the above embodiments are located outside the cavity 100, and one end of the functional wiring 300 is connected to the first device 810 and/or the second device 820. Electrically connected, the other end of the functional wiring 300 extends into the inner cavity and enters the wiring channel 211 to contact the functional layer. When the functional wiring 300 includes a detection wiring, for example, a temperature sensor detection wiring, the contact between the functional layer and the functional wiring 300 specifically means the contact between the detection wiring and the ceramic layer 220 in the functional layer. Point. When the functional wiring 300 includes a control wiring, the contact between the functional layer and the functional wiring 300 specifically refers to the electrical connection between the control wiring and the heating layer 230 in the functional layer. It goes without saying that in actual operation, different types of functional wiring 300 can adaptively change the contact manner with the functional layer, and the present invention is not particularly limited to this.

本発明の上記のいずれか１つの実施例の半導体反応チャンバに基づき、本発明の実施例は半導体加工デバイスをさらに開示する。開示された半導体加工デバイスは、上記のいずれか１つの実施例の半導体反応チャンバを有する。 Based on the semiconductor reaction chamber of any one of the above embodiments of the invention, embodiments of the invention further disclose a semiconductor processing device. The disclosed semiconductor processing device includes a semiconductor reaction chamber of any one of the embodiments above.

本発明の上述の実施例では、各実施例間の差異を重点的に説明した。各実施例間の差異の最適な特徴は、矛盾しない限り、組み合わせてさらに最適な実施例を形成してもよい。文章を簡潔にする点を考慮して、ここでは重複する説明を省略する。 The above embodiments of the present invention have focused on the differences between the embodiments. The optimal features of the differences between each embodiment may be combined to form further optimal embodiments, unless contradicted. For the sake of brevity, redundant descriptions are omitted here.

以上は、本発明の実施例の説明にすぎず、本発明を制限するものではない。当業者にとって、本発明は各種の変更および変化を有してもよい。本発明の精神及び原理内で行われたいかなる修正、等価的な置換、改良等は、いずれも本発明の特許請求の範囲に含まれる。 The foregoing is merely a description of embodiments of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention are included in the claims of the present invention.

１００ キャビティ
１１０ 内キャビティ
１２０ ノズル
２００ 静電チャック
２１０ 基体
２１１ 配線チャネル
２２０ セラミック層
２３０ 加熱層
２３１ 第２の貫通孔
３００ 機能性配線
４００ 空気抽出装置
４１０ 空気抽出機構
４２０ 第１の配管
４２１ 第１の開閉弁
４３０ 圧力検出装置
４５０ 接続配管
５００ 空気充填装置
５１０ 空気充填機構
５２０ 第２の配管
５２１ 第２の開閉弁
６００ 取り付け部
６１０ 取り付け孔
６２０ 環状凹溝
７００ 接続フランジ
７１０ 気体通路
７２０ 本体部
７３０ 接続部
７３１ 第１の貫通孔
７４０ 配線通し孔
８１０ 第１のデバイス
８２０ 第２のデバイス
９００ 電極ケース REFERENCE SIGNS LIST 100 cavity 110 inner cavity 120 nozzle 200 electrostatic chuck 210 substrate 211 wiring channel 220 ceramic layer 230 heating layer 231 second through hole 300 functional wiring 400 air extraction device 410 air extraction mechanism 420 first pipe 421 first opening and closing Valve 430 Pressure detection device 450 Connection pipe 500 Air filling device 510 Air filling mechanism 520 Second pipe 521 Second on-off valve 600 Mounting portion 610 Mounting hole 620 Annular groove 700 Connection flange 710 Gas passage 720 Body portion 730 Connection portion 731 First through hole 740 Wiring through hole 810 First device 820 Second device 900 Electrode case

Claims (11)

内キャビティを囲んで形成するキャビティと、
前記内キャビティに位置し、基体と、前記基体に設けられる機能層とを含む静電チャックであって、前記基体と前記機能層とは接着により固定され、前記基体には配線チャネルが開設され、前記機能層は前記配線チャネルの端部開口を覆い、且つ前記基体とともに前記配線チャネルを囲んで収容キャビティを形成する静電チャックと、
前記配線チャネルを貫通し、前記機能層と接触する機能性配線と、
前記収容キャビティと連通し、前記収容キャビティ内の気圧と前記内キャビティ内の気圧とを平衡化させる気圧調整装置と、
を含むことを特徴とする半導体反応チャンバ。 a cavity surrounding and forming an inner cavity;
An electrostatic chuck located in the inner cavity and including a base and a functional layer provided on the base, wherein the base and the functional layer are fixed by adhesion, and a wiring channel is opened in the base, an electrostatic chuck in which the functional layer covers end openings of the wiring channels and surrounds the wiring channels together with the substrate to form a receiving cavity;
a functional wire passing through the wiring channel and in contact with the functional layer;
an air pressure adjustment device communicating with the storage cavity and balancing the air pressure in the storage cavity and the air pressure in the inner cavity;
A semiconductor reaction chamber comprising: 前記気圧調整装置は、
前記収容キャビティと連通し、前記収容キャビティを真空にする空気抽出装置、および／または、
前記収容キャビティと連通し、前記収容キャビティに空気を充填する空気充填装置、
を含むことを特徴とする請求項１に記載の半導体反応チャンバ。 The atmospheric pressure adjustment device
an air extractor in communication with the containment cavity to evacuate the containment cavity; and/or
an air filling device that communicates with the storage cavity and fills the storage cavity with air;
2. The semiconductor reaction chamber of claim 1, comprising: 前記空気抽出装置は、空気抽出機構と、第１の配管とを含み、前記空気抽出機構は前記内キャビティの外に設けられ、前記第１の配管により前記収容キャビティと連通し、前記第１の配管には第１の開閉弁が設けられ、および／または、
前記空気充填装置は、空気充填機構と、第２の配管とを含み、前記空気充填機構は前記内キャビティの外に設けられ、前記第２の配管により前記収容キャビティと連通し、前記第２の配管には第２の開閉弁が設けられる、
ことを特徴とする請求項２に記載の半導体反応チャンバ。 The air extraction device includes an air extraction mechanism and a first pipe, the air extraction mechanism is provided outside the inner cavity, communicates with the accommodation cavity through the first pipe, and is connected to the first pipe. The pipe is provided with a first on-off valve, and/or
The air filling device includes an air filling mechanism and a second pipe, the air filling mechanism is provided outside the inner cavity, communicates with the housing cavity through the second pipe, and The piping is provided with a second on-off valve,
3. The semiconductor reaction chamber according to claim 2, wherein: 前記収容キャビティ内の気圧の大きさを検出する圧力検出装置をさらに含む、
ことを特徴とする請求項１～３のいずれか１項に記載の半導体反応チャンバ。 further comprising a pressure sensing device that senses the magnitude of air pressure within the containment cavity;
4. The semiconductor reaction chamber according to any one of claims 1 to 3, characterized in that: 前記半導体反応チャンバは、前記内キャビティに位置する取り付け部をさらに含み、前記基体は前記取り付け部に設けられ、前記取り付け部には前記収容キャビティと連通する取り付け孔が開設され、前記空気抽出装置および／または前記空気充填装置は、前記取り付け孔により前記収容キャビティと連通する、
ことを特徴とする請求項１～３のいずれか１項に記載の半導体反応チャンバ。 The semiconductor reaction chamber further includes a mounting portion located in the inner cavity, the substrate is provided in the mounting portion, the mounting portion is provided with a mounting hole communicating with the housing cavity, and the air extractor and /or the air filling device communicates with the receiving cavity through the mounting hole;
4. The semiconductor reaction chamber according to any one of claims 1 to 3, characterized in that: 前記半導体反応チャンバは、前記取り付け部の、前記静電チャックから離れた側に設けられる接続フランジをさらに含み、前記接続フランジには気体通路が開設され、前記気体通路と前記取り付け孔とは連通し、前記空気抽出装置および／または前記空気充填装置と前記気体通路とは連通する、
ことを特徴とする請求項５に記載の半導体反応チャンバ。 The semiconductor reaction chamber further includes a connection flange provided on a side of the mounting portion remote from the electrostatic chuck, wherein a gas passage is established in the connection flange, and the gas passage communicates with the mounting hole. , the air extraction device and/or the air filling device and the gas passage are in communication;
6. The semiconductor reaction chamber according to claim 5, wherein: 前記取り付け部と前記接続フランジとの互いに対向する表面の間に設けられ、且つ前記取り付け孔周りに設けられ、前記気体通路と前記取り付け孔との接続箇所を密封するシールリングをさらに含む、
ことを特徴とする請求項６に記載の半導体反応チャンバ。 a seal ring provided between the facing surfaces of the mounting portion and the connection flange and around the mounting hole for sealing a connection between the gas passage and the mounting hole;
7. The semiconductor reaction chamber according to claim 6, wherein: 前記半導体反応チャンバは締結ネジをさらに含み、前記接続フランジは、相互に接続される本体部と、接続部とを含み、前記シールリングは、前記取り付け部と前記接続部との互いに対向する表面の間に設けられ、且つ前記取り付け孔周りに設けられ、前記気体通路と前記取り付け孔との接続箇所を密封し、前記接続部には第１の貫通孔が開設され、前記取り付け部にはネジ穴が開設され、前記締結ネジは前記第１の貫通孔を貫通し、前記ネジ穴とネジ結合する、
ことを特徴とする請求項７に記載の半導体反応チャンバ。 The semiconductor reaction chamber further includes a fastening screw, the connection flange includes a body portion and a connection portion that are connected to each other, and the seal ring is provided on the surfaces of the mounting portion and the connection portion facing each other. provided between and around the mounting hole to seal a connecting portion between the gas passage and the mounting hole; a first through hole is formed in the connecting portion; is opened, and the fastening screw passes through the first through-hole and is screw-coupled with the screw hole;
8. The semiconductor reaction chamber according to claim 7, wherein: 前記接続フランジの側壁には、前記気体通路と連通する配線通し孔が開設され、前記機能性配線は、前記配線通し孔を介して伸出し、前記機能性配線と前記配線通し孔との間には、両者間の隙間を密封する密封構造が設けられる、
ことを特徴とする請求項６に記載の半導体反応チャンバ。 A wiring through-hole communicating with the gas passage is formed in a side wall of the connection flange, and the functional wiring extends through the wiring through-hole to be between the functional wiring and the wiring through-hole. is provided with a sealing structure that seals the gap between them,
7. The semiconductor reaction chamber according to claim 6, wherein: 前記機能層は、セラミック層と、加熱層とを含み、前記セラミック層は前記加熱層上に設けられ、前記加熱層は前記基体上に設けられ、前記配線チャネルの端部開口を覆い、前記基体とともに前記配線チャネルを囲んで前記収容キャビティを形成し、前記機能性配線は制御配線を含み、前記加熱層と電気的に接続され、および／または、
前記機能層は、セラミック層と、加熱層とを含み、前記セラミック層は前記加熱層上に設けられ、前記加熱層は前記基体上に設けられ、前記配線チャネルの端部開口を覆い、前記基体とともに前記配線チャネルを囲んで前記収容キャビティを形成し、前記機能性配線は検出配線を含み、前記加熱層には前記配線チャネルと連通する第２の貫通孔が開設され、前記第２の貫通孔と前記収容キャビティとは連通し、前記検出配線と前記セラミック層とは接触する、
ことを特徴とする請求項１に記載の半導体反応チャンバ。 The functional layer includes a ceramic layer and a heating layer, the ceramic layer is provided on the heating layer, the heating layer is provided on the base, covers the end opening of the wiring channel, and surrounding the wiring channel to form the receiving cavity, wherein the functional wiring includes a control wiring and is electrically connected to the heating layer; and/or
The functional layer includes a ceramic layer and a heating layer, the ceramic layer is provided on the heating layer, the heating layer is provided on the base, covers the end opening of the wiring channel, and and forming the receiving cavity surrounding the wiring channel, the functional wiring includes a sensing wiring, the heating layer is provided with a second through hole communicating with the wiring channel, the second through hole and the housing cavity are in communication, and the detection wiring and the ceramic layer are in contact,
2. The semiconductor reaction chamber according to claim 1, wherein: 請求項１～９のいずれか１項に記載の半導体反応チャンバを含む、
ことを特徴とする半導体加工デバイス。 comprising a semiconductor reaction chamber according to any one of claims 1 to 9,
A semiconductor processing device characterized by:
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