JP2023514057A - パワーフォトダイオード、光ファイバのパワーフォトダイオードへの接続方法、および、光ファイバ給電システム - Google Patents

パワーフォトダイオード、光ファイバのパワーフォトダイオードへの接続方法、および、光ファイバ給電システム Download PDF

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Publication number
JP2023514057A
JP2023514057A JP2022544304A JP2022544304A JP2023514057A JP 2023514057 A JP2023514057 A JP 2023514057A JP 2022544304 A JP2022544304 A JP 2022544304A JP 2022544304 A JP2022544304 A JP 2022544304A JP 2023514057 A JP2023514057 A JP 2023514057A
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JP
Japan
Prior art keywords
optical
layer
photodiode
electrical connection
die
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Pending
Application number
JP2022544304A
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English (en)
Japanese (ja)
Inventor
ダブリュ カードウェル，ドリュー
デヴリン，マーク，ピー
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SLT Technologies Inc
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SLT Technologies Inc
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Filing date
Publication date
Priority claimed from US16/930,250 external-priority patent/US11444216B2/en
Application filed by SLT Technologies Inc filed Critical SLT Technologies Inc
Publication of JP2023514057A publication Critical patent/JP2023514057A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
JP2022544304A 2020-02-18 2021-01-15 パワーフォトダイオード、光ファイバのパワーフォトダイオードへの接続方法、および、光ファイバ給電システム Pending JP2023514057A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202062978281P 2020-02-18 2020-02-18
US62/978,281 2020-02-18
US16/930,250 2020-07-15
US16/930,250 US11444216B2 (en) 2019-07-15 2020-07-15 Power photodiode structures, methods of making, and methods of use
PCT/US2021/013760 WO2021167724A2 (en) 2020-02-18 2021-01-15 Power photodiode, methods for coupling of optical fibers to a power photodiode, and power-over-fiber system

Publications (1)

Publication Number Publication Date
JP2023514057A true JP2023514057A (ja) 2023-04-05

Family

ID=77391067

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022544304A Pending JP2023514057A (ja) 2020-02-18 2021-01-15 パワーフォトダイオード、光ファイバのパワーフォトダイオードへの接続方法、および、光ファイバ給電システム

Country Status (4)

Country Link
EP (1) EP4107789A2 (zh)
JP (1) JP2023514057A (zh)
CN (1) CN115136328A (zh)
WO (1) WO2021167724A2 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4258031A1 (en) * 2022-04-08 2023-10-11 Viavi Solutions Inc. Butt-coupled avalanche photodiode
WO2024006787A1 (en) * 2022-06-28 2024-01-04 Slt Technologies, Inc. Photodiode with high power conversion efficiency and positive temperature coefficient

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299919A (ja) * 1986-06-20 1987-12-26 Hamamatsu Photonics Kk 光信号分岐／挿入装置
US20010011551A1 (en) * 1999-11-26 2001-08-09 Peter Peumans Photovoltaic device with optical concentrator and method of making the same
US20020155634A1 (en) * 2001-04-20 2002-10-24 General Electric Company Homoepitaxial gallium nitride based photodetector and method of producing
JP2003158291A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 受光素子を内蔵する半導体装置及びその製造方法
JP2004055620A (ja) * 2002-07-16 2004-02-19 Anritsu Corp 半導体受光素子
CN102142468A (zh) * 2010-12-17 2011-08-03 西南技术物理研究所 带光子陷阱的光电探测芯片
JP2013161950A (ja) * 2012-02-06 2013-08-19 Mitsubishi Electric Corp フォトダイオード、波長センサ、波長測定装置
US20160049528A1 (en) * 2014-08-12 2016-02-18 Keun-Yeong Cho Photoelectric conversion device and optical signal receiving unit having photodiode
US20200035843A1 (en) * 2017-04-06 2020-01-30 Institute Of Semiconductors, Chinese Academy Of Sciences InGaN-based Resonant Cavity Enhanced Detector Chip Based on Porous DBR

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Publication number Priority date Publication date Assignee Title
JPH09307134A (ja) * 1996-05-13 1997-11-28 Fujitsu Ltd 受光素子及びその光モジュール並びに光ユニット
DE10065624C2 (de) * 2000-12-29 2002-11-14 Hans Kragl Kopplungsanordnung zum optischen Koppeln eines Lichtwellenleiters mit einem elektro-optischen oder opto-elektrischen Halbleiterwandler
US7119372B2 (en) 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7138631B2 (en) * 2004-06-30 2006-11-21 Lockheed Martin Corporation Photodetector employing slab waveguide modes
JP3955065B2 (ja) * 2005-01-18 2007-08-08 シャープ株式会社 光結合器
US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
US8455894B1 (en) * 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US8866149B2 (en) 2012-02-17 2014-10-21 The Regents Of The University Of California Method for the reuse of gallium nitride epitaxial substrates
US9112087B2 (en) * 2012-09-16 2015-08-18 Shalom Wretsberger Waveguide-based energy converters, and energy conversion cells using same
US10468543B2 (en) * 2013-05-22 2019-11-05 W&Wsens Devices, Inc. Microstructure enhanced absorption photosensitive devices
US9917227B1 (en) 2014-05-07 2018-03-13 Soraa, Inc. Controlling oxygen concentration levels during processing of highly-reflective contacts
WO2019023281A1 (en) 2017-07-24 2019-01-31 Microlink Devices, Inc. DEEP PHOTOACTIVATED WET MATERIAL BURNING USING HIGH POWER ULTRAVIOLET LIGHT EMITTING DIODES

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299919A (ja) * 1986-06-20 1987-12-26 Hamamatsu Photonics Kk 光信号分岐／挿入装置
US20010011551A1 (en) * 1999-11-26 2001-08-09 Peter Peumans Photovoltaic device with optical concentrator and method of making the same
US20020155634A1 (en) * 2001-04-20 2002-10-24 General Electric Company Homoepitaxial gallium nitride based photodetector and method of producing
JP2003158291A (ja) * 2001-11-20 2003-05-30 Matsushita Electric Ind Co Ltd 受光素子を内蔵する半導体装置及びその製造方法
JP2004055620A (ja) * 2002-07-16 2004-02-19 Anritsu Corp 半導体受光素子
CN102142468A (zh) * 2010-12-17 2011-08-03 西南技术物理研究所 带光子陷阱的光电探测芯片
JP2013161950A (ja) * 2012-02-06 2013-08-19 Mitsubishi Electric Corp フォトダイオード、波長センサ、波長測定装置
US20160049528A1 (en) * 2014-08-12 2016-02-18 Keun-Yeong Cho Photoelectric conversion device and optical signal receiving unit having photodiode
US20200035843A1 (en) * 2017-04-06 2020-01-30 Institute Of Semiconductors, Chinese Academy Of Sciences InGaN-based Resonant Cavity Enhanced Detector Chip Based on Porous DBR

Also Published As

Publication number Publication date
CN115136328A (zh) 2022-09-30
WO2021167724A2 (en) 2021-08-26
WO2021167724A3 (en) 2021-11-25
EP4107789A2 (en) 2022-12-28

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