JP2023161729A - Processing method of frame unit - Google Patents

Processing method of frame unit Download PDF

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JP2023161729A
JP2023161729A JP2022072248A JP2022072248A JP2023161729A JP 2023161729 A JP2023161729 A JP 2023161729A JP 2022072248 A JP2022072248 A JP 2022072248A JP 2022072248 A JP2022072248 A JP 2022072248A JP 2023161729 A JP2023161729 A JP 2023161729A
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wafer
frame
sheet
frame unit
processing
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良信 齋藤
Yoshinobu Saito
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2022072248A priority Critical patent/JP2023161729A/en
Priority to KR1020230041932A priority patent/KR20230151890A/en
Priority to CN202310424001.8A priority patent/CN116960023A/en
Priority to TW112114947A priority patent/TW202407870A/en
Publication of JP2023161729A publication Critical patent/JP2023161729A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Abstract

To provide a processing method of a frame unit that can push down a frame of the frame unit supported on a frame support part so that a wafer projects upward irrespective of a kind of a sheet.SOLUTION: A processing method of a frame unit according to the present invention that is the processing method of the frame unit in which a wafer is positioned in an opening of a frame having the opening accommodating the wafer provided at the middle to be integrally formed with the frame by a sheet comprises a trench forming step that forms a trench on the sheet being positioned between the wafer and the frame.SELECTED DRAWING: Figure 2

Description

本発明は、ウエーハを収容する開口部を中央に備えたフレームの該開口部にウエーハを位置付けてシートによってフレームと一体になったフレームユニットの処理方法に関する。 The present invention relates to a method for processing a frame unit that is integrated with a frame by a sheet, by positioning a wafer in the opening of a frame having an opening in the center for accommodating the wafer.

ＩＣ、ＬＳＩ等の複数のデバイスが、分割予定ラインによって区画され表面に形成されたウエーハは、ダイシング装置、レーザー加工装置によって個々のデバイスチップに分割され、携帯電話、パソコン等の電気機器に利用される。 The wafer, on which multiple devices such as ICs and LSIs are divided by dividing lines and formed on the surface, is divided into individual device chips by dicing equipment and laser processing equipment, and used for electrical equipment such as mobile phones and personal computers. Ru.

ウエーハは、ダイシング装置等によって個々のデバイスチップに分割されてもウエーハの形態を保った状態で次工程に搬送されるように、ウエーハを収容する開口部を中央に備えたフレームの該開口部にウエーハを位置付けてシートによってフレームと一体になったフレームユニットの状態でダイシング装置に搬入される（例えば特許文献１、２を参照）。 The wafer is placed in the opening of a frame with an opening in the center to accommodate the wafer, so that the wafer is transported to the next process while maintaining its wafer shape even if it is divided into individual device chips by a dicing machine or the like. The wafer is positioned and transported into a dicing apparatus in the form of a frame unit integrated with a frame using a sheet (see, for example, Patent Documents 1 and 2).

また、上記のフレームユニットは、ウエーハを支持するウエーハテーブルと、ウエーハテーブルの外周に配設されフレームを支持するフレーム支持部とを備える保持手段に搬送され、ウエーハはウエーハテーブルに吸引保持され、フレームがフレーム支持部によって支持される際に押し下げられて、フレームの位置がウエーハよりも下がり、ウエーハが上方に突出する形態となる。 Further, the above-mentioned frame unit is transported to a holding means that includes a wafer table that supports the wafer and a frame support section that is disposed around the outer periphery of the wafer table and supports the frame, and the wafer is suction-held on the wafer table and the frame When the wafer is supported by the frame support part, it is pushed down, the position of the frame is lower than the wafer, and the wafer protrudes upward.

特開２００７－２０１１７８号公報Japanese Patent Application Publication No. 2007-201178 特開２０１０－０３６２７５号公報Japanese Patent Application Publication No. 2010-036275

ところで、上記した特許文献１、２に記載されたウエーハとフレームとを一体にするシートとしては、塩化ビニルシート、ポリエチレンシート、ポリプロピレンシート、ポリスチレンシート等、様々な種類が使用されており、各シートの伸び率が異なるものであることに起因して、選択されたシートの種類によっては、上記のフレーム支持部によって支持される際に、該シートが適切に伸びず、上記のフレームを適切に押し下げることができないという問題がある。 By the way, various types of sheets such as vinyl chloride sheets, polyethylene sheets, polypropylene sheets, and polystyrene sheets are used as sheets for integrating the wafer and frame described in Patent Documents 1 and 2, and each sheet Due to the different elongation rates of The problem is that I can't.

本発明は、上記事実に鑑みなされたものであり、その主たる技術課題は、シートの種類に関わらず、フレーム支持部に支持されたフレームユニットのフレームを、ウエーハが上方に突出するように押し下げることが可能なフレームユニットの処理方法を提供することにある。 The present invention has been made in view of the above facts, and its main technical problem is to press down the frame of a frame unit supported by the frame support section so that the wafer protrudes upward, regardless of the type of sheet. The object of the present invention is to provide a frame unit processing method that allows for the processing of frame units.

上記主たる技術課題を解決するため、本発明によれば、ウエーハを収容する開口部を中央に備えたフレームの該開口部にウエーハを位置付けてシートによってフレームと一体になったフレームユニットの処理方法であって、ウエーハとフレームとの間に位置するシートに溝を形成する溝形成工程を含むフレームユニットの処理方法が提供される。 In order to solve the above-mentioned main technical problem, the present invention provides a processing method for a frame unit that is integrated with a frame by a sheet, by positioning a wafer in the opening of a frame having an opening in the center for accommodating the wafer. Accordingly, a method for processing a frame unit is provided, which includes a groove forming step of forming a groove in a sheet located between a wafer and a frame.

該溝形成工程の後、ウエーハを支持するウエーハテーブルと該ウエーハテーブルの外周に配設されフレームを支持するフレーム支持部とを備える保持手段にフレームユニットを載置し、該フレーム支持部でフレームを支持し、ウエーハを該フレームから突出させるウエーハ突出工程を実施するようにしてもよい。また、該ウエーハ突出工程の後、突出したウエーハに加工を施す加工工程を実施してもよい。さらに、該ウエーハ突出工程の後、突出したウエーハに他のシートを配設し、ウエーハを他のシートに移し替える移し替え工程を実施してもよい。 After the groove forming step, the frame unit is placed on a holding means that includes a wafer table that supports the wafer and a frame support part that is disposed around the periphery of the wafer table and supports the frame, and the frame is held by the frame support part. A wafer ejecting step may be performed to support the wafer and eject the wafer from the frame. Furthermore, after the wafer ejection step, a processing step may be performed in which the ejected wafer is processed. Further, after the wafer ejection step, a transfer step may be performed in which another sheet is placed on the ejected wafer and the wafer is transferred to the other sheet.

本発明のフレームユニットの処理方法は、ウエーハを収容する開口部を中央に備えたフレームの該開口部にウエーハを位置付けてシートによってフレームと一体になったフレームユニットの処理方法であって、ウエーハとフレームとの間に位置するシートに溝を形成する溝形成工程を含んでいることから、シートに形成された溝によって引っ張り応力が緩和され、伸び率が悪いシートを使用している場合であっても、ウエーハをフレームから良好に突出させることが可能になる。 The method for processing a frame unit of the present invention is a method for processing a frame unit that is integrated with a frame by a sheet by positioning a wafer in the opening of a frame having an opening for accommodating a wafer in the center, and comprising: Since it includes a groove forming process in which grooves are formed in the sheet located between the frame and the sheet, the tensile stress is alleviated by the grooves formed in the sheet, even when using a sheet with a poor elongation rate. Also, it becomes possible to make the wafer protrude well from the frame.

本実施形態のフレームユニットを形成する態様を示す斜視図である。FIG. 3 is a perspective view showing a mode of forming the frame unit of the present embodiment. （ａ）溝形成工程の実施態様を示す斜視図、（ｂ）シートに溝が形成されたフレームユニットの斜視図である。(a) A perspective view showing an embodiment of a groove forming step, and (b) a perspective view of a frame unit in which grooves are formed in a sheet. （ａ）図２に示す溝の別の実施形態を示す斜視図、（ｂ）図２に示す溝のさらに別の実施形態を示す斜視図である。(a) A perspective view showing another embodiment of the groove shown in FIG. 2, and (b) a perspective view showing still another embodiment of the groove shown in FIG. 2. 切削装置の全体斜視図である。FIG. 2 is an overall perspective view of the cutting device. フレームユニットを保持手段に載置する態様を示す斜視図である。FIG. 3 is a perspective view showing how the frame unit is placed on the holding means. （ａ）図５の実施態様の一部を断面で示す側面図、（ｂ）突出工程の実施態様を示す斜視図である。(a) A side view showing a part of the embodiment of FIG. 5 in cross section, and (b) a perspective view showing the embodiment of the protruding step. 加工工程の実施態様の一部を断面で示す側面図である。FIG. 3 is a side view showing a part of the embodiment of the processing step in cross section. （ａ）突出工程が施されたフレームユニット上の移し替えるシートを位置づけた一部を断面で示す側面図、（ｂ）フレームユニットのウエーハに移し替えるシートを貼着した状態の一部を断面で示す側面図、（ｃ）ウエーハの移し替えが完了した状態の一部を断面で示す側面図である。(a) Side view showing a part of the sheet to be transferred on the frame unit that has been subjected to the protrusion process, in cross section; (b) A cross section of a part of the frame unit with the sheet to be transferred attached to the wafer. (c) is a side view showing a part of the state in which wafer transfer is completed in cross section.

以下、本発明に基づいて構成されるフレームユニットの処理方法に係る実施形態について、添付図面を参照しながら、詳細に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of a frame unit processing method constructed based on the present invention will be described in detail with reference to the accompanying drawings.

図１の上段には、本実施形態のフレームユニットの処理方法によって処理されるフレームユニットＵを形成する態様が示されている。フレームユニットＵを形成するに際し、まず、図に示すようなウエーハ１０と、フレームＦと、シートＴとを用意する。ウエーハ１０は、例えばシリコンからなり、複数のデバイス１２が分割予定ライン１４によって区画され表面１０ａに形成された円形板状のウエーハである。フレームＦは、ウエーハ１０を収容する開口部Ｆａを中央に備えた、例えばステンレススチールで形成された環状の板状物である。シートＴは、例えば表面に粘着層を有する樹脂のシートであり、フレームＦの裏面に外周が貼着される。なお、シートＴは粘着層を有する樹脂のシートに限定されず、例えば加熱されることにより軟化して粘着力を発揮する熱圧着シートであってもよい。フレームユニットＵを形成するに際しては、図示のように、フレームＦの開口部Ｆａにウエーハ１０を位置付け、外周がフレームＦに貼着されたシートＴの表面をウエーハ１０の裏面１０ｂに貼着する。この結果、図１の下段に示されているように、ウエーハ１０とフレームＦとがシートＴによって一体とされたフレームユニットＵが形成される。 The upper part of FIG. 1 shows an aspect of forming a frame unit U processed by the frame unit processing method of this embodiment. When forming the frame unit U, first, a wafer 10, a frame F, and a sheet T as shown in the figure are prepared. The wafer 10 is made of silicon, for example, and is a circular plate-shaped wafer in which a plurality of devices 12 are defined by dividing lines 14 and formed on a surface 10a. The frame F is an annular plate-shaped member made of stainless steel, for example, and has an opening Fa in the center for accommodating the wafer 10 . The sheet T is, for example, a resin sheet having an adhesive layer on its surface, and its outer periphery is adhered to the back surface of the frame F. Note that the sheet T is not limited to a resin sheet having an adhesive layer, and may be a thermocompression-bonded sheet that softens and exhibits adhesive strength when heated, for example. When forming the frame unit U, the wafer 10 is positioned in the opening Fa of the frame F, and the front surface of the sheet T whose outer periphery is attached to the frame F is attached to the back surface 10b of the wafer 10, as shown in the figure. As a result, as shown in the lower part of FIG. 1, a frame unit U is formed in which the wafer 10 and the frame F are integrated by the sheet T.

上記のようにフレームユニットＵを用意したならば、フレームユニットＵのシートＴのうち、ウエーハ１０とフレームＦとの間に位置するシートＴａの領域に溝を形成する溝形成工程を実施すべく、図２に示すレーザー加工装置２０（一部のみ示している）に、フレームユニットＵを搬送する。レーザー加工装置２０に搬送されたフレームユニットＵは、図示を省略する保持手段に載置する。該保持手段は、フレームユニットＵ全体を支持する平坦面を保持面とし、該保持面には、複数の吸引孔を有する吸着手段が配設されている。該保持手段は、該保持手段とレーザー光線照射手段２２とを相対的にＸ軸方向に加工送りするＸ軸送り手段と、該保持手段とレーザー光線照射手段２２とを相対的にＸ軸方向と直交するＹ軸方向に加工送りするＹ軸送り手段と、該保持手段を回転させる回転駆動手段とを備えている（いずれも図示は省略する）。 Once the frame unit U is prepared as described above, in order to perform a groove forming step of forming a groove in the region of the sheet Ta located between the wafer 10 and the frame F among the sheets T of the frame unit U, The frame unit U is transported to a laser processing device 20 (only a portion is shown) shown in FIG. The frame unit U transported to the laser processing apparatus 20 is placed on a holding means (not shown). The holding means has a flat surface that supports the entire frame unit U as a holding surface, and a suction means having a plurality of suction holes is disposed on the holding surface. The holding means includes an X-axis feeding means that processes and feeds the holding means and the laser beam irradiation means 22 relatively in the X-axis direction, and an X-axis feeding means that moves the holding means and the laser beam irradiation means 22 relatively perpendicular to the X-axis direction. It is provided with a Y-axis feeding means for processing and feeding in the Y-axis direction, and a rotational drive means for rotating the holding means (both are omitted from illustration).

レーザー加工装置２０に搬送されたフレームユニットＵは、該保持手段に載置された後、図示を省略する吸引手段を作動することにより、該保持手段の保持面に吸引保持される。該保持手段に吸引保持されたフレームユニットＵは、レーザー加工装置２０に配設される撮像手段（図示は省略する）を用いて撮像され、アライメントが実施される。該アライメントによりフレームユニットＵにおいてウエーハ１０とフレームＦの開口部Ｆａとの間に位置するシートＴａの領域、形状を検出する。 After being placed on the holding means, the frame unit U transported to the laser processing apparatus 20 is suction-held onto the holding surface of the holding means by operating a suction means (not shown). The frame unit U held by the holding means is imaged using an imaging means (not shown) provided in the laser processing device 20, and alignment is performed. Through this alignment, the area and shape of the sheet Ta located between the wafer 10 and the opening Fa of the frame F in the frame unit U is detected.

上記したアライメントにより、ウエーハ１０とフレームＦの開口部Ｆａとの間に位置するシートＴａの形状を検出したならば、上記したＸ軸送り手段、Ｙ軸送り手段を作動して、シートＴａの領域における所定の加工開始位置の上方にレーザー光線照射手段２２を位置付ける。次いで、シートＴａの表面に該シートＴａに対し吸収性を有する波長のレーザー光線ＬＢの集光点を位置付けて照射すると共に、フレームユニットＵをＸ軸方向に加工送りして所定の加工予定ラインに沿って、シートＴａの領域にアブレーション加工を施して、図示のように所定の溝１００を形成する。該溝１００は、シートＴａの裏面側には貫通しない溝であり、後述するウエー突出工程を実施して該シートＴａを拡張しても破断しない程度の深さに形成される。 When the shape of the sheet Ta located between the wafer 10 and the opening Fa of the frame F is detected through the alignment described above, the X-axis feeding means and the Y-axis feeding means described above are operated to The laser beam irradiation means 22 is positioned above a predetermined processing start position. Next, the surface of the sheet Ta is positioned and irradiated with a focused point of a laser beam LB having an absorbing wavelength, and the frame unit U is processed and fed in the X-axis direction along a predetermined processing line. Then, an ablation process is performed on a region of the sheet Ta to form a predetermined groove 100 as shown in the figure. The groove 100 is a groove that does not penetrate into the back side of the sheet Ta, and is formed to a depth that will not break even if the sheet Ta is expanded by carrying out a wafer protrusion process to be described later.

所定の加工予定ラインに上記の溝１００を形成したならば、フレームユニットＵをＹ軸方向に予め定められた所定の間隔だけＹ軸送り手段によって割り出し送りして、Ｙ軸方向で隣接する所定の加工予定ラインに沿って、上記したのと同様にしてレーザー光線ＬＢをシートＴａに照射し、フレームユニットＵをＸ軸方向に加工送りして、溝１００を形成する。同様にして、フレームユニットＵをＸ軸方向加工送りすると共に、Ｙ軸方向に割り出し送りして、シートＴａの領域に対して複数の溝１００を形成する。シートＴａの全域に複数の溝１００を平行に形成したならば、フレームユニットＵを９０度回転させて、既に溝１００を形成した方向に直交する方向をＸ軸方向に整合させる。そして、シートＴａの領域に、上記したのと同様にしてレーザー光線ＬＢの集光点を位置付けて照射して、先に形成した溝１００と直交する方向に、上記した所定の間隔で複数の溝１００を形成する。以上により本実施形態の溝形成工程が完了する。この溝形成工程により、図２（ｂ）に示すように、フレームユニットＵのシートＴａの領域に対して複数の溝１００が格子状に形成される。このように、シートＴａに溝１００を格子状に形成することにより、仮に該シートＴが、伸び率の低い素材で形成されていた場合であっても、シートＴａの領域を拡張する際の引張力が緩和されて、該シートＴａを適切に伸長させることができる。 Once the groove 100 is formed in a predetermined machining line, the frame unit U is indexed and fed in the Y-axis direction by a predetermined interval by the Y-axis feeding means, and the frame unit U is indexed and fed in the Y-axis direction by a predetermined interval. Along the planned processing line, the sheet Ta is irradiated with the laser beam LB in the same manner as described above, and the frame unit U is processed and fed in the X-axis direction to form the groove 100. Similarly, the frame unit U is processed and fed in the X-axis direction, and indexed and fed in the Y-axis direction to form a plurality of grooves 100 in the area of the sheet Ta. Once a plurality of grooves 100 are formed in parallel over the entire area of the sheet Ta, the frame unit U is rotated 90 degrees to align the direction perpendicular to the direction in which the grooves 100 have been formed with the X-axis direction. Then, the condensing point of the laser beam LB is positioned and irradiated onto the area of the sheet Ta in the same manner as described above, and a plurality of grooves 100 are formed at the predetermined intervals described above in a direction perpendicular to the grooves 100 formed previously. form. With the above steps, the groove forming process of this embodiment is completed. Through this groove forming step, a plurality of grooves 100 are formed in a lattice pattern in the area of the sheet Ta of the frame unit U, as shown in FIG. 2(b). In this way, by forming the grooves 100 in a lattice shape in the sheet Ta, even if the sheet T is made of a material with a low elongation rate, the tensile force when expanding the area of the sheet Ta can be reduced. The force is relaxed and the sheet Ta can be stretched appropriately.

なお、上記した実施形態における溝形成工程では、複数の溝１００を格子状に形成したが、本発明の溝形成工程により形成される溝の形態はこれに限定されない。例えば、図３（ａ）に示すように、ウエーハ１０とフレームＦとの間に位置するシートＴａの領域全体に環状の溝１１０を多重に形成するようにしてもよい。該溝１１０を形成する場合には、上記したレーザー光線照射手段２２を、シートＴａの領域内であってフレームユニットＵの中心位置から所定の半径位置に位置付け、集光点位置をシートＴａの表面に位置づけてレーザー光線ＬＢを照射すると共に、フレームユニットＵを矢印Ｒ１で示す方向に回転して環状の溝１１０を形成する。該溝１１０を形成したならば、フレームユニットＵの中心位置からレーザー光線ＬＢを照射する位置までの距離を所定の間隔で変更しながら照射して、複数の該溝１１０を形成し、図３（ａ）に示すような多重の環状の溝１１０とすることができる。 Note that in the groove forming step in the above-described embodiment, the plurality of grooves 100 are formed in a lattice shape, but the shape of the grooves formed in the groove forming step of the present invention is not limited to this. For example, as shown in FIG. 3A, multiple annular grooves 110 may be formed in the entire area of the sheet Ta located between the wafer 10 and the frame F. When forming the groove 110, the above-mentioned laser beam irradiation means 22 is positioned within the area of the sheet Ta at a predetermined radius position from the center position of the frame unit U, and the focal point position is placed on the surface of the sheet Ta. While positioning and irradiating the laser beam LB, the frame unit U is rotated in the direction shown by the arrow R1 to form the annular groove 110. Once the grooves 110 are formed, a plurality of grooves 110 are formed by irradiating the laser beam LB while changing the distance from the center position of the frame unit U to the irradiation position at predetermined intervals. ) may have multiple annular grooves 110 as shown in FIG.

さらに、本発明の溝形成工程により形成される溝の形態は、図３（ｂ）に示す形態であってもよい。図３（ｂ）に示す形態では、シートＴａの領域内であって、フレームユニットＵの中心を基端とする放射状方向に複数の溝１２０を形成する。該溝１２０を形成する際にも、上記のレーザー加工装置２０のレーザー光線照射手段２２、Ｘ軸送り手段、Ｙ軸送り手段等を作動して形成することが可能であり、詳細についての説明は省略する。なお、本発明の溝形成工程により形成される溝の形態は、上記した形態に限定されず、上記の溝１００～１２０の組み合わせであってもよい。 Furthermore, the form of the groove formed by the groove forming process of the present invention may be the form shown in FIG. 3(b). In the form shown in FIG. 3(b), a plurality of grooves 120 are formed in the region of the sheet Ta in a radial direction with the center of the frame unit U as the base end. When forming the groove 120, it is also possible to form it by operating the laser beam irradiation means 22, the X-axis feeding means, the Y-axis feeding means, etc. of the laser processing device 20, and detailed explanation is omitted. do. Note that the form of the groove formed by the groove forming process of the present invention is not limited to the above-described form, and may be a combination of the above-mentioned grooves 100 to 120.

上記した溝形成工程では、レーザー加工装置２０の保持手段に対し、フレームユニットＵのウエーハ１０が貼着された側を上方に、シートＴ側を下方に向けて保持し、ウエーハ１０とフレームＦとの間に位置するシートＴａに上記の溝１００～１２０を形成するように説明したが、本発明はこれに限定されず、シートＴ側を上方に、ウエーハ１０が貼着された側を下方に向けて保持し、上記したシートＴにおけるシートＴａの領域に溝を形成するようにしてもよい。 In the groove forming step described above, the frame unit U is held with the side to which the wafer 10 is attached facing upward and the sheet T side facing downward with respect to the holding means of the laser processing device 20, and the wafer 10 and the frame F are held together. Although the above-mentioned grooves 100 to 120 are formed in the sheet Ta located between the grooves 100 to 120, the present invention is not limited thereto. Alternatively, a groove may be formed in the region of the sheet Ta in the sheet T by holding the sheet T facing the same direction.

また、上記した実施形態では、レーザー加工装置２０のレーザー光線照射手段２２を使用して溝１００～１２０を形成したが、本発明はこれに限定されず、図示を省略する切削加工装置を使用して、環状の切り刃を有する切削ブレードにより溝を形成するものであってもよい。該切削ブレードにより上記のフレームユニットＵのシートＴａの領域に溝を形成する際には、図１の下段に示すフレームユニットＵの天地を反転し、シートＴ側を上方に向けて該切削装置の保持手段に保持させることが好ましく、該切削装置の切削ブレードにより、ウエーハ１０とフレームＦとの間に位置するシートＴａの領域に切削ブレードにより形成される溝を、例えば、上記した溝１００～１２０により形成された形態で形成するようにしてもよい。 Further, in the above-described embodiment, the grooves 100 to 120 are formed using the laser beam irradiation means 22 of the laser processing device 20, but the present invention is not limited thereto, and the grooves 100 to 120 are formed using a cutting device (not shown). Alternatively, the grooves may be formed by a cutting blade having an annular cutting edge. When forming a groove in the area of the sheet Ta of the frame unit U with the cutting blade, turn the frame unit U shown in the lower part of FIG. 1 upside down, and turn the cutting device with the sheet T side facing upward. Preferably, the cutting blade of the cutting device is used to cut a groove formed by the cutting blade in a region of the sheet Ta located between the wafer 10 and the frame F, such as the grooves 100 to 120 described above. It may be formed in the form formed by.

上記した溝形成工程により、フレームユニットＵにおけるウエーハ１０とフレームＦとの間に位置するシートＴａに溝を形成したならば、以下に説明するウエーハ突出工程を実施することができる。 Once the grooves are formed in the sheet Ta located between the wafer 10 and the frame F in the frame unit U through the groove forming process described above, the wafer ejecting process described below can be carried out.

本実施形態におけるウエーハ突出工程は、図４に示す切削装置３０によって、ウエーハ１０に対する切削加工を施すために実施される工程である。切削装置３０は、略直方体形状のハウジング３１を備え、ハウジング３１のカセットテーブル３２ａに載置されるカセット３２と、カセット３２からフレームユニットＵを仮置きテーブル３３に搬出する搬出入手段３４と、仮置きテーブル３３に搬出されたフレームユニットＵを、ウエーハテーブル３６ａを備えた保持手段３６に搬送する旋回アームを有する搬送手段３５と、ウエーハテーブル３６ａに保持されたウエーハ１０に切削加工を施す切削ブレード３８ａを回転自在に備える切削手段３８と、上記したウエーハテーブル３６ａ上に保持されたウエーハ１０を撮像して、切削手段３８よって切削すべき領域を検出するためのアライメント手段３７と、図４においてウエーハテーブル３６ａが位置付けられた搬出入位置からウエーハ１０を含むフレームユニットＵを洗浄装置３９（詳細については省略されている）に搬送する洗浄搬出手段３９ａと、を備えている。ウエーハテーブル３６ａは、上面にウエーハ１０を保持する保持面を備えており、該保持面は、ウエーハ１０の直径に対応する寸法である。該保持面は、通気性を有する部材により形成され、図示を省略する吸引手段に接続されている。該吸引手段を作動させることにより、該保持面に吸引負圧を生成して、ウエーハ１０を吸引保持することができる。さらに、切削装置３０には、図示を省略する制御手段、及び表示手段等が配設される。 The wafer ejection process in this embodiment is a process performed to cut the wafer 10 using the cutting device 30 shown in FIG. The cutting device 30 includes a housing 31 having a substantially rectangular parallelepiped shape, a cassette 32 placed on a cassette table 32a of the housing 31, a loading/unloading means 34 for loading and unloading the frame unit U from the cassette 32 to a temporary table 33, and a temporary A transport means 35 having a rotating arm that transports the frame unit U carried out to the placing table 33 to a holding means 36 equipped with a wafer table 36a, and a cutting blade 38a that performs cutting on the wafer 10 held on the wafer table 36a. A cutting means 38 rotatably provided with a cutting means 38, an alignment means 37 for capturing an image of the wafer 10 held on the wafer table 36a and detecting an area to be cut by the cutting means 38, and a wafer table shown in FIG. A cleaning/unloading means 39a is provided for transporting the frame unit U including the wafer 10 from the loading/unloading position where the cleaning device 36a is located to the cleaning device 39 (details are omitted). The wafer table 36a has a holding surface on its upper surface that holds the wafer 10, and the holding surface has a size corresponding to the diameter of the wafer 10. The holding surface is formed of a breathable member and is connected to suction means (not shown). By operating the suction means, negative suction pressure can be generated on the holding surface to suction and hold the wafer 10. Furthermore, the cutting device 30 is provided with a control means, a display means, etc., which are not shown.

図５に示すように、切削装置３０のウエーハテーブル３６ａの外周には、ウエーハテーブル３６ａにフレームユニットＵを載置して保持する際に、フレームＦを支持するフレーム支持部３６ｂが均等な間隔で複数（本実施形態では４つ）配設されている。フレーム支持部３６ｂには、該フレームＦを把持する回動自在に配設された把持プレート３６ｃが配設されている。 As shown in FIG. 5, on the outer periphery of the wafer table 36a of the cutting device 30, frame support parts 36b that support the frame F are arranged at equal intervals when the frame unit U is mounted and held on the wafer table 36a. A plurality (four in this embodiment) are provided. A rotatably gripping plate 36c for gripping the frame F is disposed on the frame support portion 36b.

該ウエーハ突出工程を実施するに際しては、図５に示すように、フレーム支持部３６ｂの把持プレート３６ｃを開いた状態にし、フレームユニットＵをウエーハテーブル３６ａに載置する。次いで、フレーム支持部３６ｂの把持プレート３６ｃを、図６（ａ）に矢印Ｒ２で示す方向に回動させる。これにより、図６（ａ）に示すように、回動する把持プレート３６ｃがフレームＦに係合し、図６（ｂ）に示すようにフレームＦが矢印Ｒ３で示す方向に下降して、フレーム支持部３６ｂによってフレームＦが支持され、側方から見て、ウエーハ１０がフレームＦから上方に突出した状態となり、突出工程が完了する。 When performing the wafer ejection step, as shown in FIG. 5, the grip plate 36c of the frame support portion 36b is opened, and the frame unit U is placed on the wafer table 36a. Next, the grip plate 36c of the frame support portion 36b is rotated in the direction shown by arrow R2 in FIG. 6(a). As a result, as shown in FIG. 6(a), the rotating gripping plate 36c engages with the frame F, and as shown in FIG. 6(b), the frame F descends in the direction shown by arrow R3, and the frame The frame F is supported by the support portion 36b, and the wafer 10 protrudes upward from the frame F when viewed from the side, and the ejection process is completed.

本実施形態においては、フレームユニットＵに対して、予め溝形成工程が施されていることにより、ウエーハ１０とフレームＦとの間に位置するシートＴａの領域に適宜の溝（例えば、溝１００～１２０のいずれか、又は組み合わせ）が形成されていることから、該突出工程において、フレーム支持部３６ｂの把持プレート３６ｃによってフレームＦを押し下げる際に、シートＴに形成された上記の溝によって突出工程における引っ張り応力が緩和されて、シートＴが伸び率の低い素材によって形成されていた場合であっても、ウエーハ１０をフレームＦから適正に突出させることができる。 In this embodiment, the frame unit U is subjected to a groove forming process in advance, so that appropriate grooves (for example, grooves 100 to 100) are formed in the region of the sheet Ta located between the wafer 10 and the frame F. 120 or a combination), when the frame F is pushed down by the grip plate 36c of the frame support part 36b in the protruding process, the groove formed in the sheet T allows the frame to be held in the protruding process. Even if the tensile stress is relaxed and the sheet T is made of a material with a low elongation rate, the wafer 10 can be properly projected from the frame F.

上記したように、切削装置３０のウエーハテーブル３６ａにおいて突出工程を実施したならば、突出させたウエーハ１０に加工を施す加工工程を実施する。本実施形態では、上記の撮像手段３７を使用してアライメントを実施し、該アライメントによってウエーハ１０の表面１０ａに形成された分割予定ライン１４の位置を検出する。次いで、撮像手段３７によって検出した分割予定ライン１４の位置情報に基づいて、ウエーハテーブル３６ａと切削手段３８とをＸ軸方向、Ｙ軸方向、及びＺ軸方向に相対的に移動させる移動手段（図示は省略する）を作動して、図７に示すように、切削手段３８の切削ブレード３８ａを矢印Ｒ４で示す方向に高速回転させると共に、図７に示すように、ウエーハ１０の表面１０ａから切込み送りして、ウエーハテーブル３６ａをＸ軸方向、Ｙ軸方向に加工送りすることで、ウエーハ１０の全ての分割予定ライン１４に沿って切削溝を形成して加工工程が完了する。本実施形態では、フレーム支持部３６ｂでフレームＦを支持することでフレームユニットＵに対して突出工程を実施していることから、ウエーハ１０がフレームＦから上方に突出しており、切削ブレード３８ａにより切削加工を実施する際に、フレームＦが邪魔になることがない。 As described above, once the ejection process is performed on the wafer table 36a of the cutting device 30, a processing process is performed in which the ejected wafer 10 is processed. In this embodiment, alignment is performed using the imaging means 37 described above, and the position of the planned dividing line 14 formed on the surface 10a of the wafer 10 is detected by the alignment. Next, based on the positional information of the planned dividing line 14 detected by the imaging means 37, a moving means (not shown) moves the wafer table 36a and the cutting means 38 relatively in the X-axis direction, the Y-axis direction, and the Z-axis direction. (omitted)) to rotate the cutting blade 38a of the cutting means 38 at high speed in the direction indicated by arrow R4 as shown in FIG. By processing and feeding the wafer table 36a in the X-axis direction and the Y-axis direction, cutting grooves are formed along all of the planned dividing lines 14 of the wafer 10, and the processing process is completed. In this embodiment, the frame F is supported by the frame support part 36b to perform the protrusion process on the frame unit U, so the wafer 10 protrudes upward from the frame F and is cut by the cutting blade 38a. The frame F does not get in the way when processing is performed.

なお、上記した実施形態では、本発明の突出工程及び加工工程を、上記の切削装置３０によって実施したが、本発明はこれに限定されない。本発明の突出工程、及び加工工程は、例えば、上記した保持手段３６と同様の保持手段を備えた他の加工装置、例えば、図示を省略するレーザー加工装置によって実施することができる。その場合も、保持手段によって突出工程を実施し、該レーザー加工装置に配設された図示を省略するレーザー光線照射手段によって、ウエーハ１０に対するレーザー加工を実施する加工工程を実施することができる。 In addition, in the above-described embodiment, the ejection step and the machining step of the present invention were carried out by the above-mentioned cutting device 30, but the present invention is not limited thereto. The ejection step and processing step of the present invention can be carried out by, for example, another processing device equipped with a holding means similar to the holding means 36 described above, such as a laser processing device (not shown). In that case as well, the ejection step can be performed by the holding means, and the processing step of performing laser processing on the wafer 10 can be performed by the laser beam irradiation means (not shown) provided in the laser processing apparatus.

さらに、上記した実施形態では、図６に基づき説明した突出工程を実施した後、突出したウエーハ１０に加工を施す加工工程を実施したが、本発明はこれに限定されず、上記した突出工程により突出させたウエーハ１０に、別の移し替え用のシートＴ’を貼着し、ウエーハ１０を該シートＴ’に移し替える移し替え工程を実施するようにしてもよい。 Further, in the above-described embodiment, after the protrusion process described based on FIG. 6 is performed, the protruding wafer 10 is processed. Another transfer sheet T' may be attached to the protruding wafer 10, and a transfer process may be performed in which the wafer 10 is transferred to the sheet T'.

該移し替え工程を実施するに際しては、例えば、ウエーハ１０を収容することが可能な開口部を中央に備えたフレームＦ’と、該フレームＦ’の該開口部を塞ぐようにフレームＦ’の裏面に貼着された粘着層を有する移し替え用のシートＴ’とを用意し、フレームＦから突出したウエーハ１０の表面１０ａに上記のシートＴ’の粘着層が形成された面（図中下面側）を対向させる（図８（ａ）を参照）。なお、図８（ａ）には説明の都合上、フレームＦ’及びシートＴ’の断面のみを示すが、本実施形態のフレームＦ’及びシートＴ’は、図１の中段に示すフレームＦ及びシートＴと同様の形態を備えている。 When carrying out the transfer process, for example, a frame F' is provided with an opening in the center capable of accommodating the wafer 10, and a back surface of the frame F' is provided so as to close the opening of the frame F'. A transfer sheet T' having an adhesive layer affixed to the frame F is prepared, and the surface 10a of the wafer 10 protruding from the frame F is the side on which the adhesive layer of the sheet T' is formed (lower side in the figure). ) to face each other (see FIG. 8(a)). Although FIG. 8(a) shows only the cross sections of the frame F' and sheet T' for convenience of explanation, the frame F' and sheet T' of this embodiment are similar to the frame F and sheet T' shown in the middle part of FIG. It has the same form as the sheet T.

上記したシートＴ’及びフレームＦ’を用意したならば、図８（ｂ）に示すように、て、矢印Ｒ５で示す方向に下降させて、シートＴ’をウエーハ１０の表面１０ａに貼着する。次いで、図８（ｃ）に示すように、シートＴ’と共にウエーハ１０を矢印Ｒ６で示す方向に上昇させて、ウエーハ１０の裏面１０ｂをフレームユニットＵのシートＴから剥離して、上記のシートＴ’に移し替える。以上により本発明の移し替え工程が完了する。なお、この移し替え工程を良好に実施すべく、上記した突出工程を実施する前に、シートＴのウエーハ１０に対する粘着力を低下させる粘着力低下工程を実施しておくことが好ましい。該粘着力低下工程を実施する方法としては、例えば、上記の突出工程を実施すべくウエーハテーブル３６ａにフレームユニットＵを保持する前に、シートＴの裏面側から紫外線を照射したり、該シートＴを冷却したりする等の処理を施しておくことが好ましい。また、該粘着力低下工程を実施しない場合は、ウエーハ１０の裏面１０ｂに貼着されるシートＴの粘着層の粘着力と比較し、シートＴ’に付与される粘着層の粘着力をより強いものに設定しておくとよい。上記したように、フレームユニットＵに対して本実施形態により溝形成工程及び突出工程が施されていることで、上記の移し替え工程においても、剥離される側のシートＴが、移し替えられるシートＴ’に触れることなく、適切に移し替え工程が実施される。 Once the sheet T' and frame F' described above are prepared, as shown in FIG. 8(b), the sheet T' is attached to the surface 10a of the wafer 10 by lowering it in the direction shown by the arrow R5. . Next, as shown in FIG. 8(c), the wafer 10 is raised together with the sheet T' in the direction shown by the arrow R6, and the back surface 10b of the wafer 10 is peeled off from the sheet T of the frame unit U. 'Move to '. With the above steps, the transfer process of the present invention is completed. In addition, in order to perform this transfer process favorably, it is preferable to perform an adhesive force reducing process of reducing the adhesive force of the sheet T to the wafer 10 before implementing the above-described ejecting process. As a method for carrying out the adhesive strength reducing process, for example, before holding the frame unit U on the wafer table 36a to carry out the above-described protruding process, ultraviolet rays may be irradiated from the back side of the sheet T, or the sheet T may be It is preferable to perform a treatment such as cooling. In addition, when the adhesive force reducing step is not performed, the adhesive force of the adhesive layer applied to the sheet T' is stronger than the adhesive force of the adhesive layer of the sheet T attached to the back surface 10b of the wafer 10. It is a good idea to set it to something. As described above, since the groove forming process and the protruding process are performed on the frame unit U according to the present embodiment, even in the above transfer process, the sheet T on the side to be peeled is the sheet to be transferred. The transfer process is properly performed without touching T'.

１０：ウエーハ
１２：デバイス
１４：分割予定ライン
２０：レーザー加工装置
２２：レーザー光線照射手段
３０：切削装置
３１：ハウジング
３２：カセット
３３：仮置きテーブル
３４：搬出入手段
３５：搬送手段
３６：保持手段
３６ａ：ウエーハテーブル
３６ｂ：フレーム支持部
３６ｃ：把持プレート
３７：撮像手段
３８：切削手段
３８ａ：切削ブレード
３９：洗浄装置
３９ａ：洗浄搬送手段
１００、１１０、１２０：溝
Ｆ、Ｆ’：フレーム
Ｔ、Ｔ’：シート 10: Wafer 12: Device 14: Scheduled dividing line 20: Laser processing device 22: Laser beam irradiation means 30: Cutting device 31: Housing 32: Cassette 33: Temporary storage table 34: Carrying in/out means 35: Conveying means 36: Holding means 36a : Wafer table 36b: Frame support 36c: Gripping plate 37: Imaging means 38: Cutting means 38a: Cutting blade 39: Cleaning device 39a: Cleaning conveyance means 100, 110, 120: Grooves F, F': Frames T, T' : sheet

Claims (4)

ウエーハを収容する開口部を中央に備えたフレームの該開口部にウエーハを位置付けてシートによってフレームと一体になったフレームユニットの処理方法であって、
ウエーハとフレームとの間に位置するシートに溝を形成する溝形成工程を含むフレームユニットの処理方法。 A method for processing a frame unit that is integrated with a frame by a sheet by positioning a wafer in the opening of a frame having an opening for accommodating the wafer in the center, the method comprising:
A frame unit processing method including a groove forming step of forming grooves in a sheet located between a wafer and a frame. 該溝形成工程の後、ウエーハを支持するウエーハテーブルと該ウエーハテーブルの外周に配設されフレームを支持するフレーム支持部とを備える保持手段にフレームユニットを載置し、該フレーム支持部でフレームを支持し、ウエーハを該フレームから突出させるウエーハ突出工程を実施する請求項１に記載のフレームユニットの処理方法。 After the groove forming step, the frame unit is placed on a holding means that includes a wafer table that supports the wafer and a frame support part that is disposed around the periphery of the wafer table and supports the frame, and the frame is held by the frame support part. 2. The method for processing a frame unit according to claim 1, further comprising a wafer ejecting step of supporting the wafer and ejecting the wafer from the frame. 該ウエーハ突出工程の後、突出したウエーハに加工を施す加工工程を備える請求項２に記載のフレームユニットの処理方法。 3. The method for processing a frame unit according to claim 2, further comprising a processing step of processing the protruding wafer after the wafer ejection step. 該ウエーハ突出工程の後、突出したウエーハに他のシートを配設し、ウエーハを他のシートに移し替える移し替え工程を備える請求項２に記載のフレームユニットの処理方法。 3. The frame unit processing method according to claim 2, further comprising a transfer step of disposing another sheet on the protruding wafer and transferring the wafer to the other sheet after the wafer protrusion step.
JP2022072248A 2022-04-26 2022-04-26 Processing method of frame unit Pending JP2023161729A (en)

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