JP2023160795A - パワートランジスタ回路の動作方法 - Google Patents

パワートランジスタ回路の動作方法 Download PDF

Info

Publication number
JP2023160795A
JP2023160795A JP2023069248A JP2023069248A JP2023160795A JP 2023160795 A JP2023160795 A JP 2023160795A JP 2023069248 A JP2023069248 A JP 2023069248A JP 2023069248 A JP2023069248 A JP 2023069248A JP 2023160795 A JP2023160795 A JP 2023160795A
Authority
JP
Japan
Prior art keywords
circuit
power transistor
voltage
power
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023069248A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023160795A5 (enExample
Inventor
クーチャク マッテオ－アレッサンドロ
Kutschak Matteo-Alessandro
ヴィーデンバウアー オットー
Wiedenbauer Otto
ファッハマン クリスティアン
Fachmann Christian
カインドル ヴィンフリート
Kaindl Winfried
ヴェーバー ハンス
Hans Weber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Austria AG
Original Assignee
Infineon Technologies Austria AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Austria AG filed Critical Infineon Technologies Austria AG
Publication of JP2023160795A publication Critical patent/JP2023160795A/ja
Publication of JP2023160795A5 publication Critical patent/JP2023160795A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H03K17/167—Soft switching using parallel switching arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28—Modifications for introducing a time delay before switching
    • H03K17/284—Modifications for introducing a time delay before switching in field effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2023069248A 2022-04-21 2023-04-20 パワートランジスタ回路の動作方法 Pending JP2023160795A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP22169317 2022-04-21
EP22169317.9A EP4266581A1 (en) 2022-04-21 2022-04-21 Method for operating a power transistor circuit

Publications (2)

Publication Number Publication Date
JP2023160795A true JP2023160795A (ja) 2023-11-02
JP2023160795A5 JP2023160795A5 (enExample) 2026-03-02

Family

ID=81346161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023069248A Pending JP2023160795A (ja) 2022-04-21 2023-04-20 パワートランジスタ回路の動作方法

Country Status (5)

Country Link
US (2) US12273098B2 (enExample)
EP (1) EP4266581A1 (enExample)
JP (1) JP2023160795A (enExample)
KR (1) KR20230150228A (enExample)
CN (1) CN116938209A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026109488A1 (en) * 2024-11-21 2026-05-28 Eaton Intelligent Power Limited Switching device and method for operating a switching device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120262220A1 (en) * 2011-04-13 2012-10-18 Semisouth Laboratories, Inc. Cascode switches including normally-off and normally-on devices and circuits comprising the switches
GB2553588B (en) * 2016-09-13 2020-06-24 Ge Aviat Systems Ltd Multi-semiconductor solid state power controllers and method for managing inductive switching transients thereof
EP3859932B1 (en) * 2019-03-29 2023-05-10 Huawei Digital Power Technologies Co., Ltd. Photovoltaic converter module string, control method, and system

Also Published As

Publication number Publication date
EP4266581A1 (en) 2023-10-25
US20250226820A1 (en) 2025-07-10
US12273098B2 (en) 2025-04-08
US20230344422A1 (en) 2023-10-26
KR20230150228A (ko) 2023-10-30
CN116938209A (zh) 2023-10-24

Similar Documents

Publication Publication Date Title
US9755630B2 (en) Solid-state circuit breakers and related circuits
JP4946508B2 (ja) 半導体回路
CN104604134B (zh) 半导体装置
US20120235710A1 (en) Circuit Arrangement with a MOSFET and an IGBT
JP6603287B2 (ja) 構成可能なクランプ回路
Xu et al. Integrated high-speed over-current protection circuit for GaN power transistors
CN110138211B (zh) 转换电路
CN104104369B (zh) 驱动电路、半导体集成电路和驱动电路的控制方法
CN105264774B (zh) 半导体装置的保护电路
CN118117999A (zh) 具有电压箝位电路的功率半导体装置
US20250226820A1 (en) Method for operating a power transistor circuit
EP3731413A1 (en) Gate driver circuit and method for driving a gate of a field-effect transistor
JP5630484B2 (ja) 半導体装置
US10014763B2 (en) Protection circuit for semiconductor switching element, and power conversion device
KR20190011494A (ko) SiC MOSFET용 게이트 구동회로
US10784768B2 (en) Conversion circuit and conversion circuitry
WO2005027326A1 (ja) スイッチング素子保護回路
JP5541349B2 (ja) 半導体装置
US5488533A (en) Methods and apparatus for isolating a power network from a load during an overcurrent condition
US20170099009A1 (en) Semiconductor switching assembly
KR101034866B1 (ko) Ｊｆｅｔ이 적용된 전원공급장치의 보호회로
KR102801622B1 (ko) 전력 스위치용 단락보호회로
CN119675644A (zh) 一种用于保护晶体管的方法、保护电路及控制电路
JP6312946B1 (ja) 電力用半導体素子の駆動回路およびモータ駆動装置
CN112204865A (zh) 金属氧化物半导体场效应晶体管的驱控

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260219