JP2023146053A5 - - Google Patents

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Publication number
JP2023146053A5
JP2023146053A5 JP2022053039A JP2022053039A JP2023146053A5 JP 2023146053 A5 JP2023146053 A5 JP 2023146053A5 JP 2022053039 A JP2022053039 A JP 2022053039A JP 2022053039 A JP2022053039 A JP 2022053039A JP 2023146053 A5 JP2023146053 A5 JP 2023146053A5
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JP
Japan
Prior art keywords
section
larger
semiconductor
easy
band gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022053039A
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English (en)
Japanese (ja)
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JP2023146053A (ja
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Publication date
Application filed filed Critical
Priority to JP2022053039A priority Critical patent/JP2023146053A/ja
Priority claimed from JP2022053039A external-priority patent/JP2023146053A/ja
Priority to CN202310310606.4A priority patent/CN116895694A/zh
Priority to US18/191,177 priority patent/US20230317817A1/en
Publication of JP2023146053A publication Critical patent/JP2023146053A/ja
Publication of JP2023146053A5 publication Critical patent/JP2023146053A5/ja
Pending legal-status Critical Current

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JP2022053039A 2022-03-29 2022-03-29 半導体装置およびパワーデバイス Pending JP2023146053A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022053039A JP2023146053A (ja) 2022-03-29 2022-03-29 半導体装置およびパワーデバイス
CN202310310606.4A CN116895694A (zh) 2022-03-29 2023-03-27 半导体装置以及功率器件
US18/191,177 US20230317817A1 (en) 2022-03-29 2023-03-28 Semiconductor device and power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022053039A JP2023146053A (ja) 2022-03-29 2022-03-29 半導体装置およびパワーデバイス

Publications (2)

Publication Number Publication Date
JP2023146053A JP2023146053A (ja) 2023-10-12
JP2023146053A5 true JP2023146053A5 (enExample) 2025-03-03

Family

ID=88193645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022053039A Pending JP2023146053A (ja) 2022-03-29 2022-03-29 半導体装置およびパワーデバイス

Country Status (3)

Country Link
US (1) US20230317817A1 (enExample)
JP (1) JP2023146053A (enExample)
CN (1) CN116895694A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7722004B2 (ja) * 2021-07-21 2025-08-13 セイコーエプソン株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205604B2 (en) * 2001-03-13 2007-04-17 International Business Machines Corporation Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
JP4108537B2 (ja) * 2003-05-28 2008-06-25 富士雄 舛岡 半導体装置
TWI294670B (en) * 2003-06-17 2008-03-11 Ibm Ultra scalable high speed heterojunction vertical n-channel misfets and methods thereof
JP2005310921A (ja) * 2004-04-19 2005-11-04 Okayama Prefecture Mos型半導体装置及びその製造方法
JP2012099541A (ja) * 2010-10-29 2012-05-24 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2014229885A (ja) * 2013-05-27 2014-12-08 ルネサスエレクトロニクス株式会社 半導体装置
JP2016167499A (ja) * 2015-03-09 2016-09-15 株式会社東芝 半導体装置
US10685886B2 (en) * 2017-12-15 2020-06-16 International Business Machines Corporation Fabrication of logic devices and power devices on the same substrate

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