JP2023113467A - Temperature control system, manufacturing plant, and method for installing device in manufacturing plant - Google Patents

Abstract

To provide a temperature control system capable of easily controlling gas to be supplied to a temperature control target in a desired state with high accuracy while suppressing an energy consumption.SOLUTION: A temperature control system S1 according to an embodiment comprises: a refrigeration cycle device 100 that circulates a refrigerant; a liquid circulation device 200 that circulates liquid whose temperature is controlled by the refrigerant; and one or a plurality of gas supply devices 300 that supply gas whose temperature is controlled by the liquid to a temperature control object using a blower.SELECTED DRAWING: Figure 1

Description

TECHNICAL FIELD Embodiments of the present invention relate to a temperature control system including a refrigeration cycle device that circulates a refrigerant, a manufacturing plant including the same, and a method of installing equipment in the manufacturing plant.

In semiconductor manufacturing plants, various processes such as resist coating, exposure, development, and etching are performed. Such processing is typically performed in a processing chamber with precisely controlled temperature and humidity.

The temperature and humidity control in each processing chamber is generally performed by supplying air from an air conditioner to each processing chamber. The air conditioner precisely adjusts the temperature and humidity of the air supplied to each processing chamber. The air conditioner usually includes a refrigeration cycle device, and blows air cooled by an evaporator of the refrigeration cycle device to each processing chamber.

A semiconductor manufacturing plant may use a system in which a plurality of processing apparatuses having processing chambers as described above are unitized. Such a system can reduce the footprint, have advantages in wafer transport and avoidance of contamination, and can improve the throughput of semiconductors. In supplying air to such systems, a plurality of ducts were typically connected to the air conditioner, each duct connecting to a corresponding treatment chamber.

JP 2021-44453 A

In recent years, for example, exposure processing using EUV (Extreme Ultra Violet) has realized the manufacture of a semiconductor having a pattern with a wiring width of one digit nanometer. In order to properly form such ultra-fine patterns, it is required to control the temperature and humidity of the processing chambers in which various processes are performed with much stricter accuracy than before.

However, when connecting a plurality of ducts connected to an air conditioner to each processing chamber, it may not be possible to create a processing environment for forming extremely fine patterns.

For example, two ducts of a plurality of ducts may be separately connected to two processing chambers performing the same process. At this time, a situation may arise in which one of the two ducts has a different length than the other. At this time, the temperature of the air supplied to the processing chamber from the longer duct may be higher than the temperature of the air supplied to the processing chamber from the shorter duct. As a result, there is a possibility that proper processing cannot be performed in one of the processing chambers.

Further, when the processing device and the air conditioner are relatively far apart, the length of the duct extending from the air conditioner increases, and the number of times the duct is bent may increase. In this case, pressure loss in the duct increases, resulting in increased power consumption. In recent years, the amount of electric power consumed by semiconductor manufacturing plants is increasing more and more. Therefore, it is desirable to suppress pressure loss during air supply as much as possible in order to save energy. In order to reduce the length of the duct, it is conceivable to reduce the distance between the processing device and the air conditioner. However, such a layout change may be difficult to implement due to installation space restrictions, ducts connected to other processing apparatuses, and the like.

An object of the present invention is to provide a temperature control system, a manufacturing plant, and a method of installing equipment in a manufacturing plant that facilitates highly accurate control of gas supplied to a temperature controlled object to a desired state while suppressing energy consumption. is.

A temperature control system according to an embodiment of the present invention includes a refrigeration cycle device that circulates a refrigerant, a liquid circulation device that circulates a liquid whose temperature is controlled by the refrigerant, and a blower that circulates a gas whose temperature is controlled by the liquid. and one or more gas supply devices for supplying a temperature controlled object.

In this temperature control system, by interposing the liquid circulation device between the refrigeration cycle device and the gas supply device, it is possible to bring the gas supply device closer to the temperature control target without bringing the refrigeration cycle device closer to the temperature control target. becomes. As a result, it is possible to suppress changes in pressure loss and temperature and/or humidity of the gas that occur from the gas supply device to the object of temperature control. Therefore, it becomes easy to control the gas to be supplied to the object of temperature control to a desired state with high accuracy while suppressing energy consumption.
Specifically, in a general structure where the refrigerant of the refrigeration cycle device directly controls the temperature of the gas and supplies it to the temperature controlled object, if the distance from the refrigeration cycle device to the temperature controlled object is long, the gas is allowed to flow. Ducts can be long. Therefore, the pressure loss to the gas and changes in the temperature and/or humidity of the gas can become large. On the other hand, the temperature control system according to one embodiment controls the temperature of the gas via the liquid circulated by the liquid circulating device using the refrigerant of the refrigerating cycle device. This makes it possible to bring the temperature control position of the gas closer to the temperature controlled target without bringing the refrigeration cycle device closer to the temperature controlled target. Therefore, the problems of pressure loss and temperature and/or humidity changes that can occur in general structures can be eliminated.

A temperature control system according to one embodiment includes a plurality of the gas supply devices, the liquid circulation device has a plurality of heat exchangers arranged in parallel, and the plurality of heat exchangers each The liquid whose temperature is controlled by a refrigerant is passed through each of the plurality of heat exchangers, and each of the plurality of heat exchangers controls the temperature of the gas in one of the gas supply devices corresponding to the plurality of gas supply devices using the liquid. good too.

In this configuration, for example, when the refrigeration cycle device cannot or is difficult to approach all or some of the plurality of temperature control targets, or when it is undesirable to bring the refrigeration cycle device close to all or some of the plurality of temperature control targets, all or some of the plurality of gas supply devices It is possible to suppress the distance to the temperature controlled object. In addition, one refrigeration cycle device can control the temperature of gas in a plurality of gas supply devices via the liquid circulation device. This makes it easier to control the gas to be supplied to a plurality of temperature control targets to a desired state with high accuracy while effectively suppressing energy consumption. Also, the footprint of a system that temperature-controls a plurality of temperature-controlled targets can be suppressed.

The temperature control system according to one embodiment further includes a fluid flow device that flows a fluid, and the refrigeration cycle device includes a compressor and the refrigerant that has been expanded after being compressed by the compressor. a first evaporator and a second evaporator arranged in parallel for causing the liquid to flow, wherein the first evaporator controls the temperature of the liquid in the liquid circulation device by the refrigerant; controls the temperature of the fluid in the fluid circulation device with the refrigerant, the refrigeration cycle device further has a hot gas branch passage for branching a part of the refrigerant discharged from the compressor, The refrigerant flowing through the hot gas branch flow path may heat the fluid in the fluid flow device.

In this configuration, the refrigeration cycle device can control the temperature of the gas in the plurality of gas supply devices via the liquid circulation device, and can also directly control the temperature of the fluid in the fluid circulation device. Energy consumption can be effectively suppressed by using the hot gas in the refrigeration cycle device instead of the electric heater to heat the fluid in the fluid circulation device.

A temperature control system according to an embodiment of the present invention includes a refrigeration cycle device that circulates a refrigerant, a first liquid circuit that circulates a first liquid whose temperature is controlled by the refrigerant, and a temperature control system that uses the first liquid to control the temperature. a liquid circulation device having a second liquid circuit for circulating a second liquid to be controlled; one or more gas supply devices for supplying a gas temperature-controlled by the second liquid to a temperature-controlled object by a blower; Prepare.

In this temperature control system, by interposing the liquid circulation device between the refrigeration cycle device and the gas supply device, it is possible to bring the gas supply device closer to the temperature control target without bringing the refrigeration cycle device closer to the temperature control target. becomes. As a result, it is possible to suppress changes in pressure loss and temperature and/or humidity of the gas that occur from the gas supply device to the object of temperature control. Therefore, it becomes easy to control the gas to be supplied to the object of temperature control to a desired state with high accuracy while suppressing energy consumption.
Specifically, the temperature control system according to one embodiment controls the temperature of the gas via the first liquid and the second liquid circulated by the liquid circulation device using the refrigerant of the refrigeration cycle. This makes it possible to bring the temperature control position of the gas closer to the temperature controlled target without bringing the refrigeration cycle device closer to the temperature controlled target. Further, by interposing the first liquid circuit between the refrigeration cycle device and the second liquid circuit, it becomes easier to flexibly adjust the temperature control of the second liquid.

The refrigeration cycle device has a control heat exchanger that controls the temperature of the first liquid with the refrigerant to be passed through, the first liquid circuit has a first liquid heat exchanger, and the control heat exchange The first liquid whose temperature is controlled by the vessel is passed through the first liquid heat exchanger and returned to the control heat exchanger, and the first liquid heats the second liquid in the first liquid heat exchanger. a main circuit to be controlled, a first liquid branch path branched from the main circuit and reconnected to the main circuit to allow the first liquid to flow therethrough, and a first liquid branch path provided in the first liquid branch path to flow the first liquid a secondary circuit having a second liquid heat exchanger to pass through.

In this configuration, the first liquid heat exchanger in the main circuit of the first liquid circuit temperature-controls the second liquid, and the second liquid can temperature-control the gas. Also, the second liquid heat exchanger in the secondary circuit of the first liquid circuit can temperature-control other temperature-controlled objects with the first liquid.

The first liquid branch is reconnected to the main circuit at a portion of the main circuit downstream of the first liquid heat exchanger and upstream of a temperature control position by the control heat exchanger. good too.

In this configuration, the first liquid flowing out of the second liquid heat exchanger mixes with the first liquid flowing out of the first liquid heat exchanger, so that the first liquid flowing out of the second liquid heat exchanger becomes the first liquid. It is possible to suppress the influence on the temperature of the first fluid flowing into the liquid heat exchanger.

The refrigeration cycle device includes a compressor, an endothermic heat exchanger that cools the refrigerant compressed by the compressor, an expander that expands the refrigerant flowing out from the endothermic heat exchanger, and the expander. a refrigerant circuit for sending the refrigerant flowing out of the control heat exchanger to the compressor; and a refrigerant circuit downstream of the compressor in the refrigerant circuit. a refrigerant branch passage branched from an upstream portion of the endothermic heat exchanger and reconnected to the refrigerant circuit to allow the refrigerant to flow; and a first refrigerant branch passage provided in the refrigerant branch passage through which the refrigerant passes a hot gas circuit having a hot gas heat exchanger, wherein the first hot gas heat exchanger is positioned upstream of the second liquid heat exchanger in the first liquid branch by the refrigerant passed through The first liquid flowing through the portion may be heated.

With this configuration, the temperature of the first liquid flowing into the second liquid heat exchanger can be rapidly increased while suppressing energy consumption.

The hot gas circuit is provided in a portion upstream of the first hot gas heat exchanger in the refrigerant branch passage, and two of the three ports constitute a part of the refrigerant branch passage. A first bypass passage that is connected to a three-way valve and the remaining port of the first three-way valve, is connected to a downstream portion of the first hot gas heat exchanger in the refrigerant branch passage, and bypasses the refrigerant. and .

In this configuration, since the first three-way valve can be used to switch between the presence or absence of heat exchange by the first hot gas heat exchanger, the temperature of the first liquid flowing through the second liquid heat exchanger can be flexibly adjusted. becomes possible.

The hot gas circuit further includes a second hot gas heat exchanger provided in a portion downstream of the first hot gas heat exchanger in the refrigerant branch passage and allowing the refrigerant to pass therethrough, wherein the second hot gas heat is The exchanger may heat the first liquid flowing through the main circuit with the refrigerant passed through it.

The second liquid circuit has a plurality of heat exchangers arranged in parallel, each of the plurality of heat exchangers passes the second liquid whose temperature is controlled by the first liquid, and the plurality of Each of the heat exchangers may control the temperature of the gas in one of the corresponding gas supply devices among the plurality of gas supply devices with the second liquid.

The refrigeration cycle device may be an air refrigeration cycle device that circulates air as the refrigerant.

With this configuration, the high refrigerating capacity that can be output by the air refrigerating cycle device can be effectively used to effectively control the temperature. In particular, when there are a plurality of temperature control targets, the temperature of each temperature control target can be efficiently controlled.

Further, the gas supply device may be separated from the refrigeration cycle device. This makes it easier to bring the gas supply device closer to the object of temperature control.

Further, a manufacturing plant according to one embodiment includes a processing system having a processing apparatus having a processing chamber supplied with gas received at a gas inlet, and the temperature control system.

Further, a method of installing equipment in a manufacturing plant according to one embodiment is a method of installing equipment in a manufacturing plant provided with a processing system having a processing apparatus having a processing chamber to which gas received at a gas inlet port is supplied. a step of preparing the temperature control system; and a step of arranging the gas supply device and the refrigeration cycle device to supply the gas from the gas supply device to the processing chamber as the temperature control target. And prepare.

According to the manufacturing plant and the method of installing equipment in the manufacturing plant according to one embodiment, it becomes easy to control the gas supplied to the processing device to a desired state with high accuracy while suppressing energy consumption.

ADVANTAGE OF THE INVENTION According to this invention, it becomes easy to control the gas supplied to temperature control object with high precision to a desired state, suppressing energy consumption.

1 is a schematic diagram of a semiconductor manufacturing plant as a manufacturing plant equipped with a temperature control system according to a first embodiment; FIG. 1 is a schematic diagram of a temperature control system according to a first embodiment; FIG. It is a schematic diagram of a temperature control system according to a second embodiment. It is a schematic diagram of a temperature control system according to a third embodiment. It is a figure explaining the cooling operation of the temperature control system which concerns on 3rd Embodiment. It is a figure explaining the heating operation of the temperature control system which concerns on 3rd Embodiment. It is a figure explaining the combination operation of cooling and heating of the temperature control system which concerns on 3rd Embodiment. It is a schematic diagram of a temperature control system according to a fourth embodiment. FIG. 11 is a schematic diagram of a semiconductor manufacturing plant as a manufacturing plant equipped with a temperature control system according to a fifth embodiment; FIG. 12 is a schematic diagram of a semiconductor manufacturing plant as a manufacturing plant equipped with a temperature control system according to a sixth embodiment;

Each embodiment will be described in detail below with reference to the accompanying drawings.

<First embodiment>
FIG. 1 is a schematic diagram of a semiconductor manufacturing plant P as a manufacturing plant equipped with a temperature control system S1 according to the first embodiment. The semiconductor manufacturing plant P includes a temperature control system S<b>1 , a semiconductor manufacturing system 1 , a first duct 30 , a second duct 40 and a third duct 50 .

The semiconductor manufacturing system 1 is connected to the temperature control system S1 through the first duct 30, the second duct 40 and the third duct 50. As shown in FIG. The temperature control system S1 supplies air adjusted to a desired state to the semiconductor manufacturing system 1 through the first duct 30, the second duct 40 and the third duct 50. FIG.

In this embodiment, the semiconductor manufacturing system 1 is installed on the floor above the floor on which the temperature control system S1 is installed. In other words, the temperature control system S1 is installed on the floor below the floor on which the semiconductor manufacturing system 1 is installed. The first duct 30 , the second duct 40 and the third duct 50 pass vertically through the floor on which the semiconductor manufacturing system 1 is installed to reach the semiconductor manufacturing system 1 .

With the layout as described above, the semiconductor manufacturing system 1 is prevented from being affected by dust that may be generated in the temperature control system S1, for example. However, the semiconductor manufacturing system 1 and the temperature control system S1 may be installed on the same floor. Each part of the semiconductor manufacturing plant P will be described in detail below.

(Semiconductor manufacturing system)
A semiconductor manufacturing system 1 includes a plurality of processing apparatuses 2 and internal ducts 4 .

A plurality of processing apparatuses 2 each have a processing chamber 3 . A plurality of processing apparatuses 2 perform specific processes, such as resist film forming process, developing process, functional film forming process, cleaning process, etc., on wafers as workpieces transported into the processing chamber 3 .

Among the plurality of processes performed by the plurality of processing apparatuses 2, it is necessary to control the state of the processing chamber 3 to a desired temperature and humidity with high accuracy, and to control the flow rate of the air flowing into the processing chamber 3. The processing required to control the desired inflow conditions is included. The processing apparatus 2 requiring control to such a desired state controls the processing chamber 3 to a desired state by air as gas from the temperature control system S1.

In FIG. 1, a developing device 2A, a resist film forming device 2B, and a functional film forming device 2C among the plurality of processing devices 2 are shown. In the present embodiment, the plurality of processing apparatuses 2 includes a plurality of (four in the illustrated example) developing apparatuses 2A, a plurality of (two in the illustrated example) resist film forming apparatuses 2B, and a plurality of (two in the illustrated example) ) and the functional film forming apparatus 2C. The plurality of developing devices 2A are stacked vertically. The resist film forming apparatus 2B is also vertically stacked. A plurality of functional film forming apparatuses 2C are also vertically stacked. Although the plurality of processing devices 2 includes devices that perform other processes, they are omitted from the drawing. Note that an apparatus for performing other processing may be an exposure apparatus, a cleaning apparatus, or the like.

The internal duct 4 has a first internal duct portion 4A, a second internal duct portion 4B and a third internal duct portion 4C. The third internal duct portion 4C is shown in dashed lines because it is positioned behind the second internal duct portion 4B in the direction perpendicular to the plane of the drawing. The first internal duct portion 4A extends vertically adjacent to the plurality of developing devices 2A from the side. The second internal duct portion 4B extends vertically while being adjacent to the plurality of resist film forming apparatuses 2B from the sides. The third internal duct portion 4C extends vertically while being adjacent to the plurality of functional film forming apparatuses 2C from the side.

The first internal duct portion 4A has a gas introduction port 5A, and the first duct 30 is connected to the gas introduction port 5A. Each developing device 2A has an inlet 3A for introducing air into the processing chamber 3. As shown in FIG. Similarly, the second internal duct portion 4B has a gas introduction port 5B, and the second duct 40 is connected to the gas introduction port 5B. Each resist film forming apparatus 2B has an inlet 3B for introducing air into the processing chamber 3. As shown in FIG. Similarly, the third internal duct portion 4C has a gas introduction port 5C, and the third duct 50 is connected to the gas introduction port 5C. Each functional film forming apparatus 2</b>C has an inlet (not shown) for introducing air into the processing chamber 3 . A gas introduction port 5A in the first internal duct portion 4A, a gas introduction port 5B in the second internal duct portion 4B, and a gas introduction port 5C in the third internal duct portion 4C open downward.

In the present embodiment, the air received from the first duct 30 into the gas introduction port 5A of the first internal duct portion 4A passes through the interior of the first internal duct portion 4A, and then from the receiving port 3A of each developing device 2A. It is supplied to the processing chamber 3 of the developing device 2A. Also, the air received from the second duct 40 into the gas introduction port 5B of the second internal duct portion 4B passes through the inside of the second internal duct portion 4B and is then discharged from the receiving port 3B of each resist film forming apparatus 2B to the resist film. It is supplied to the processing chamber 3 of the forming apparatus 2B. Further, the air received from the third duct 50 into the gas introduction port 5C of the third internal duct portion 4C passes through the interior of the third internal duct portion 4C and is discharged from the receiving port of each functional film forming apparatus 2C to form the functional film. It is supplied to the processing chamber 3 of the device 2C.

In the present embodiment, a plurality of processing devices 2 (a plurality of developing devices 2A, a plurality of resist film forming devices 2B, a plurality of Although air is distributed to the functional film forming device 2C), it may be configured such that air is supplied to one processing device 2 from the first internal duct portion 4A, the second internal duct portion 4B, or the third internal duct portion 4C. .

The semiconductor manufacturing system 1 according to the present embodiment is intended to form an extremely fine pattern on a wafer that has been subjected to EUV (Extreme Ultra Violet) exposure processing after resist coating. In this case, particularly in the resist film forming apparatus 2B, it is required to control the temperature and humidity in the processing chamber 3 with extremely high accuracy, and the flow rate of the air flowing into the processing chamber 3 is kept constant at a relatively large flow rate. required to be kept Specifically, in the resist film forming apparatus 2B, for example, the control accuracy for the target temperature is required to be within ±0.5° C., and the control accuracy for the target humidity is required to be within ±0.5%. Sometimes.

On the other hand, in the developing device 2A, it may not be necessary to control the temperature and humidity with higher accuracy than in the resist film forming device 2B. In some cases, the flow rate may be smaller than the desired flow rate.

(temperature control system)
FIG. 2 is a schematic diagram of the temperature control system S1. As shown in FIGS. 1 and 2, the temperature control system S1 includes a refrigeration cycle device 100 that circulates a refrigerant, a liquid circulation device 200, a gas supply device 300, a first fluid circulation device 350, a second fluid and a flow device 360 . The liquid circulating device 200 circulates liquid whose temperature is controlled by the refrigerant circulated by the refrigerating cycle device 100 . The gas supply device 300 is configured to supply air whose temperature is controlled by the liquid circulated by the liquid circulation device 200 to a temperature-controlled object (processing chamber 3) with blowers (316, 326, 336).

The refrigerating cycle device 100 is a refrigerating cycle device that circulates a fluorine-based refrigerant (non-natural refrigerant). The refrigeration cycle device 100 includes a main refrigerant circuit 100A in which a compressor 101, a condenser 102, a first expansion valve 103, and a first evaporator 104 are connected so that the refrigerant circulates in this order, and a main refrigerant circuit 100A. and a secondary refrigerant circuit 100B branched from 100A. As shown in FIG. 1, the refrigeration cycle device 100 houses a main refrigerant circuit 100A and a secondary refrigerant circuit 100B in a housing 100C.

The secondary refrigerant circuit 100B branches from a portion downstream of the condenser 102 in the main refrigerant circuit 100A and upstream of the first expansion valve 103, and a branch passage 105 that is reconnected to the main refrigerant circuit 100A; It has a second expansion valve 106 and a second evaporator 107 provided in the branch passage 105 . The branch passage 105 is reconnected to the main refrigerant circuit 100A at a portion downstream of the first evaporator 104 and upstream of the compressor 101 in the main refrigerant circuit 100A. The second expansion valve 106 is provided upstream of the second evaporator 107 . In the secondary refrigerant circuit 100B, the refrigerant flowing from the main refrigerant circuit 100A into the branch passage 105 passes through the second expansion valve 106 and the second evaporator 107, and then returns to the main refrigerant circuit 100A.

Refrigerant compressed by the compressor 101 branches and flows into the first expansion valve 103 and the second expansion valve 106 via the condenser 102 . The first evaporator 104 allows the refrigerant from the first expansion valve 103 to flow. The second evaporator 107 allows the refrigerant from the second expansion valve 106 to flow. That is, the first evaporator 104 and the second evaporator 107 are arranged in parallel in the refrigeration cycle device 100 .

The compressor 101 compresses the low-temperature and low-pressure gaseous refrigerant flowing out of the first evaporator 104 and/or the second evaporator 107 and then sends the refrigerant to the condenser 102 . The compressor 101 may be, for example, a scroll compressor, but its type is not particularly limited.

The condenser 102 cools and condenses the refrigerant flowing from the compressor 101 . The condenser 102 is composed of a water-cooled heat exchanger. The condenser 102 is supplied with cooling water from the cooling water supply pipe 110 and condenses the refrigerant with the cooling water. The cooling water may be water. Note that the condenser 102 may be an air-cooled heat exchanger. The condenser 102 corresponds to an endothermic heat exchanger.

The first expansion valve 103 expands the refrigerant supplied from the condenser 102 to depressurize it, and supplies it to the first evaporator 104 as a low-temperature, low-pressure gas-liquid mixed state. The second expansion valve 106 expands the refrigerant supplied from the condenser 102 to depressurize it, and supplies it to the second evaporator 107 as a low-temperature, low-pressure gas-liquid mixed state.

The first evaporator 104 is connected to the liquid circulation system 200 and controls the temperature of the liquid in the liquid circulation system 200 with the refrigerant. That is, the first evaporator 104 exchanges heat between the refrigerant supplied from the first expansion valve 103 and the liquid in the liquid circulation device 200 . Here, the refrigerant that has undergone heat exchange with the liquid becomes a low-temperature, low-pressure gas state, flows out from the first evaporator 104 , and is compressed again by the compressor 101 . The first evaporator 104 corresponds to a control heat exchanger.

On the other hand, the second evaporator 107 is connected to the first fluid circulation device 350, and temperature-controls the fluid in the first fluid circulation device 350 with the refrigerant. That is, the second evaporator 107 exchanges heat between the refrigerant supplied from the second expansion valve 106 and the liquid in the first fluid communication device 350 . Here, the refrigerant that has undergone heat exchange with the liquid becomes a low-temperature, low-pressure gas state, flows out of the second evaporator 107 , and is compressed again by the compressor 101 .

The liquid circulator 200 includes a tank 201 that stores liquid, a pump 202 that pumps out the liquid from the tank 201, a first heat exchanger 211 that is arranged in parallel for passing the liquid flowing out of the pump 202, and a second heat exchanger. An exchanger 212 and a third heat exchanger 213 are provided. The liquid circulation device 200 is connected to the first evaporator 104 as described above, and the liquid whose temperature is controlled by the refrigerant in the first evaporator 104 is circulated through the first heat exchanger 211 and the second heat exchanger by driving the pump 202 . 212 and the third heat exchanger 213. Liquids flowing out of the first heat exchanger 211 , the second heat exchanger 212 and the third heat exchanger 213 are circulated to the tank 201 .

Specifically, the liquid circulation device 200 includes a main flow passage 220 having a temperature controlled portion 214 whose temperature is controlled by a tank 201, a pump 202, and a first evaporator 104; It has a first branch channel 221 , a second branch channel 222 and a third branch channel 223 . The downstream ends of the first branch channel 221 , the second branch channel 222 and the third branch channel 223 are connected to the upstream end of the main channel 220 . A first heat exchanger 211 is provided in the first branched flow path 221, a second heat exchanger 212 is provided in the second branched flow path 222, and a third heat exchanger 213 is provided in the third branched flow path 223. be provided. Liquids flowing out of each of the first heat exchanger 211 , the second heat exchanger 212 and the third heat exchanger 213 circulate from the upstream end of the main flow path 220 to the tank 201 . The liquid circulated by the liquid circulating device 200 is, for example, an antifreeze liquid, such as an ethylene glycol aqueous solution. The liquid is not particularly limited, and may be ether-based liquid, fluorine-based liquid, fluorine-ether-based liquid, silicone oil, or the like.

Here, the tank 201 and the pump 202 in the liquid circulation device 200 are housed in the housing 100C of the refrigeration cycle device 100. As shown in FIG. On the other hand, the first heat exchanger 211 is housed in a housing 311 of the first gas supply device 310, which will be described later. The second heat exchanger 212 is housed in a housing 321 of the second gas supply device 320, which will be described later. The third heat exchanger 213 is housed in a housing 331 of a third gas supply device 330, which will be described later. A part of the liquid circulation device 200 is integrated with the refrigeration cycle device 100 . On the other hand, the first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 are separated from the refrigeration cycle device 100 .

The gas supply device 300 includes a first gas supply device 310 , a second gas supply device 320 and a third gas supply device 330 .

The first gas supply device 310 is connected to the first heat exchanger 211 in the liquid circulation device 200 . Then, the first gas supply device 310 supplies the air, whose temperature is controlled by the liquid passing through the first heat exchanger 211, to the temperature controlled object by the blower 316 thereof. The temperature control target of the first gas supply device 310 is the processing chamber 3 of the developing device 2A.

The second gas supply device 320 is connected to the second heat exchanger 212 in the liquid circulation device 200 . The second gas supply device 320 supplies the air whose temperature is controlled by the liquid passing through the second heat exchanger 212 with its blower 326 to the temperature controlled object. The temperature control target of the second gas supply device 320 is the processing chamber 3 of the resist film forming device 2B.

The third gas supply device 330 is connected to the third heat exchanger 213 in the liquid circulation device 200 . The third gas supply device 330 supplies the air whose temperature is controlled by the liquid passing through the third heat exchanger 213 with its blower 336 to the temperature controlled object. The object of temperature control by the third gas supply device 330 is the processing chamber 3 of the functional film forming device 2C.

Referring to FIG. 1, the first gas supply device 310 includes a housing 311 having a gas intake port 311A and a gas supply port 311B, a heater 314, a humidifier 315, a blower 316, an inverter 317, and a controller. 318; In the first gas supply device 310, the air flowing through the gas passage from the gas intake port 311A to the gas supply port 311B is cooled by the first heat exchanger 211 and then heated by the heater 314 to be humidified. It is humidified by the device 315 . The first heat exchanger 211 is arranged in the gas flow path. A gas passage from the gas intake port 311A to the gas supply port 311B is formed by, for example, a tubular gas flow duct.

A two-dot chain arrow α1 in FIG. As indicated by arrow α1, the air flowing into gas intake port 311A is first cooled by first heat exchanger 211 . At this time, dehumidification is also performed. The air is then heated by heater 314 and then humidified by humidifier 315 . After that, the air flows into the first duct 30 from the gas supply port 311B. The gas supply port 311B opens upward.

The form of the heater 314 is not particularly limited, and may be an electric heater or a heat exchanger through which the high-temperature refrigerant of the refrigeration circuit (refrigeration cycle device 100) passes. The type of the humidifier 315 is not particularly limited, either, and may be any of a steam type, a dropping pervaporation type, and an ultrasonic type.

A blower 316 generates a driving force for causing air to flow from the gas intake port 311A to the gas supply port 311B. Blower 316 has a motor that rotates a fan, and in this embodiment, a three-phase AC motor or a brushless motor is employed as the motor. The blower 316 controls the motor by the inverter 317 . The inverter 317 adjusts the motor rotation speed by adjusting the frequency of the alternating current supplied to the motor. As a result, the blower 316 can supply air to the first internal duct portion 4A in a flow rate adjustable manner.

Controller 318 controls heater 314 , humidifier 315 and inverter 317 . Controller 318 controls part or all of heater 314 and humidifier 315 based on detection information from one or more temperature sensors and one or more humidity sensors (not shown) arranged downstream of humidifier 315 . By controlling the operation of , the temperature of the air to be supplied may be controlled to reach the target temperature and the humidity of the air to be supplied may be controlled to reach the target humidity. In addition, based on the detection information from one or more flow rate sensors arranged downstream of the humidifier 315, the controller 318 adjusts the flow rate of the air flowing into the processing chamber 3 via the inverter 317 to the target flow rate. Blower 316 may be controlled. Also, the temperature of the air may be adjusted by controlling the flow rate of the refrigerant passing through the first heat exchanger 211 . At this time, the flow rate of the refrigerant may be adjusted by adjusting the rotation speed of the pump 202 with a controller (not shown).

The controller 318 may be configured by a computer including a CPU, ROM, etc. In this case, various processes are performed according to programs stored in the ROM. Also, the controller 318 may be configured by other processors or electric circuits (for example, FPGA (Field Programmable Gate Alley), etc.).

The second gas supply device 320 includes a housing 321 having a gas intake port 321A and a gas supply port 321B, a heater 324, a humidifier 325, a blower 326, an inverter 327, and a controller 328. In the second gas supply device 320, the air flowing through the gas passage from the gas intake port 321A to the gas supply port 321B is cooled by the second heat exchanger 212 and then heated by the heater 324 to humidify. It is humidified by the device 325 . A second heat exchanger 212 is arranged in the gas flow path. A gas passage from the gas intake port 321A to the gas supply port 321B is formed by, for example, a tubular gas flow duct.

A two-dot chain line arrow α2 in FIG. As indicated by arrow α2, the air flowing into gas intake port 321A is first cooled by second heat exchanger 212 . At this time, dehumidification is also performed. The air is then heated by heater 324 and then humidified by humidifier 325 . After that, air flows into the second duct 40 from the gas supply port 321B. The gas supply port 321B opens upward. Since the configuration of each part constituting the second gas supply device 320 is basically the same as the configuration of each part of the first gas supply device 310, detailed description thereof will be omitted.

The third gas supply device 330 includes a housing 331 having a gas intake port 331A and a gas supply port 331B, a heater 334, a humidifier 335, a blower 336, an inverter 337, and a controller 338. In the third gas supply device 330, the air flowing through the gas passage from the gas intake port 331A to the gas supply port 331B is cooled by the third heat exchanger 213 and then heated by the heater 334 to humidify. It is humidified by the device 335 . A third heat exchanger 213 is arranged in the gas flow path. A gas passage from the gas intake port 331A to the gas supply port 331B is formed by, for example, a tubular gas flow duct.

A two-dot chain line arrow α3 in FIG. As indicated by arrow α3, the air flowing into gas intake port 331A is first cooled by third heat exchanger 213 . At this time, dehumidification is also performed. The air is then heated by heater 334 and then humidified by humidifier 335 . After that, air flows into the third duct 50 from the gas supply port 331B. The gas supply port 331B opens upward. Since the configuration of each part of the third gas supply device 330 is basically the same as the configuration of each part of the first gas supply device 310 and the second gas supply device 320, detailed description thereof will be omitted.

As described above, the temperature control system S1 supplies temperature- and humidity-controlled air to each processing chamber 3 that is subject to temperature control. The first gas supplier 310, the second gas supplier 320 and the third gas supplier 330 are separate from each other. On the other hand, the first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 are each integrated with a part of the liquid circulation device 200 . Specifically, the first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 respectively incorporate the corresponding heat exchangers 211 , 212 , 213 of the liquid circulation device 200 . A part of the first branched flow path 221, the second branched flow path 222, and the third branched flow path 223 in the liquid circulation device 200 is accommodated in the housing 100C in the refrigeration cycle device 100, and the first branched flow path 221, the third branched flow path Other portions of the second branch channel 222 and the third branch channel 223 are arranged outside the housing 100C. Portions of the first branched flow path 221, the second branched flow path 222 and the third branched flow path 223, which are arranged outside the housing 100C, extend to the outside from the housing 100C to form the corresponding first gas supply device. 310 , enter the second gas supply device 320 and the third gas supply device 330 .

A first heat exchanger 211 is provided in a portion of the first branch channel 221 located inside the first gas supply device 310 . A second heat exchanger 212 is provided in a portion of the second branch channel 222 located inside the second gas supply device 320 . A third heat exchanger 213 is provided in a portion of the third branch channel 223 located inside the third gas supply device 330 . It is desirable that the portions of the first branched flow path 221, the second branched flow path 222 and the third branched flow path 223, which are exposed to the outside, are particularly heat insulating. A heat insulating material may be provided in the first branched flow path 221, the second branched flow path 222, and the third branched flow path 223, or the entire piping portion of the liquid circulation device 200 including these.

On the one hand, the first fluid communication device 350 is connected to the second evaporator 107 as shown in FIG. The first fluid circulation device 350 includes a temperature control liquid tank 351 that stores a temperature control liquid as a fluid, a first temperature control liquid pump 352 that pumps out the temperature control liquid from the temperature control liquid tank 351, and A first heater 353 and a second heater 354 arranged in parallel for passing the temperature control liquid flowing out from the liquid control pump 352 are provided. The first fluid communication device 350 sends the temperature-controlled liquid whose temperature is controlled by the refrigerant in the second evaporator 107 to the first heater 353 and the second heater 354 by driving the first temperature-controlled liquid pump 352 . The first heater 353 and the second heater 354 can heat while passing the temperature control liquid. The illustrated first heater 353 and second heater 354 house electrical heaters within the passageway formations. The temperature control liquid flowing out of each of the first heater 353 and the second heater 354 circulates to the temperature control liquid tank 351 after passing through a temperature control target (not shown).

Specifically, the first fluid circulation device 350 includes a temperature-controlled liquid tank 351, a first temperature-controlled liquid pump 352, and a temperature-controlled liquid main flow path having a temperature-controlled portion 355 whose temperature is controlled by the second evaporator 107. 356 , and a first temperature control liquid branch channel 357 and a second temperature control liquid branch channel 358 branched from the downstream end of the temperature control liquid main channel 356 . A first heater 353 is provided in the first temperature control liquid branch channel 357 , and a second heater 354 is provided in the second temperature control liquid branch channel 358 . Fluids flowing out from the first temperature-adjusting liquid branch flow path 357 and the second temperature-adjusting liquid branch flow path 358 are subjected to temperature control from the upstream end of the temperature-adjusting liquid main flow path 356 after passing through the corresponding temperature-controlled target. It circulates to the liquid tank 351 .

A target for temperature control by the temperature control liquid may be, for example, a stage that holds a wafer in the developing device 2A. Further, the temperature control liquid that is passed through the first fluid flow device 350 is, for example, an antifreeze liquid, such as an ethylene glycol aqueous solution. The temperature control liquid is not particularly limited, and may be ether-based liquid, fluorine-based liquid, fluorine-ether-based liquid, silicone oil, or the like.

The second fluid circulation device 360 is connected to the temperature control liquid tank 351 of the first fluid circulation device 350, draws in the temperature control liquid from the temperature control liquid tank 351, controls the temperature of the object to be temperature controlled, and then supplies the temperature control liquid. is circulated to the temperature control liquid tank 351 . The second fluid circulation device 360 is arranged in parallel with a second temperature control liquid pump 362 that draws out the temperature control liquid from the temperature control liquid tank 351 and passes the temperature control liquid flowing out of the second temperature control liquid pump 362 . A third heater 363 and a fourth heater 364 are provided. Although not shown, a piping member is provided between X1 and X1' in FIG. 2 to flow the temperature control liquid from the temperature control liquid tank 351 to the second temperature control liquid pump 362 side. A piping member is provided between X2 and X2' to flow the temperature control liquid that has passed through the temperature controlled object from the third heater 363 and the fourth heater 364 to the temperature control liquid tank 351 side.

In the second fluid circulation device 360 , the temperature control liquid flowing out from the second temperature control liquid pump 362 is cooled by the cooling water heat exchanger 370 and then sent to the third heater 363 and the fourth heater 364 . The third heater 363 and the fourth heater 364 can heat while allowing the temperature control liquid to pass through. The illustrated third heater 363 and fourth heater 364 house electric heaters within the passageway formations. The temperature control liquid flowing out of each of the third heater 363 and the fourth heater 364 circulates to the temperature control liquid tank 351 after passing through a temperature control target (not shown).

The object of temperature control by the temperature control liquid flowing out from the third heater 363 and the fourth heater 364 may be, for example, the wall portion of the developing device 2A. The cooling water heat exchanger 370 may control the temperature of the temperature control liquid using water, for example. Cooling water heat exchanger 370 may be an air-cooled heat exchanger. The configuration and connection mode of each part of the second fluid circulation device 360 are the same as those of the first fluid circulation device 350, so description thereof will be omitted.

(duct)
Returning to FIG. 1 , the first duct 30 connects the gas supply port 311B of the first gas supply device 310 and the gas introduction port 5A provided in the first internal duct section 4A in the semiconductor manufacturing system 1 . In FIG. 1, symbol UD indicates the vertical direction. Code Ca indicates the center of the gas supply port 311B, and code Cb indicates the center of the gas introduction port 5A. Reference L1 denotes a virtual straight line connecting the center Ca of the gas supply port 311B and the center Cb of the gas introduction port 5A.

Here, the angle between the straight line L1 and the vertical direction is 0 degrees or more and 45 degrees or less, more specifically, 0 degrees. The central axis of the gas supply port 311B and the central axis of the gas introduction port 5A are positioned coaxially, and the gas supply port 311B and the gas introduction port 5A face each other in the vertical direction UD. The first duct 30 extends straight from the gas supply port 311B to the gas introduction port 5A in parallel with the vertical direction UD, and connects the gas supply port 311B and the gas introduction port 5A. The central axis C1 of the first duct 30 and the straight line L1 are aligned.

The second duct 40 connects the gas supply port 321B of the second gas supply device 320 and the gas introduction port 5B provided in the second internal duct section 4B in the semiconductor manufacturing system 1 . In FIG. 1, symbol Cc indicates the center of the gas supply port 321B, and symbol Cd indicates the center of the gas introduction port 5B. Reference character L2 indicates a virtual straight line connecting the center Cc of the gas supply port 321B and the center Cd of the gas introduction port 5B.

The angle between the straight line L2 and the vertical direction is also 0 degrees or more and 45 degrees or less, and more specifically, 0 degrees. The central axis of the gas supply port 321B and the central axis of the gas introduction port 5B are positioned coaxially, and the gas supply port 321B and the gas introduction port 5B face each other in the vertical direction UD. The second duct 40 extends straight from the gas supply port 321B to the gas introduction port 5B and parallel to the vertical direction UD, and connects the gas supply port 321B and the gas introduction port 5B. The central axis C2 of the second duct 40 and the straight line L2 are aligned.

When the gas supply port and the gas introduction port face each other as in this embodiment, the angle between the straight lines L1 and L2 and the vertical direction is preferably 0 degrees. The angles formed by the straight lines L1 and L2 with the vertical direction are preferably 30 degrees or less, more preferably 22.5 degrees or less, and still more preferably 15 degrees or less, 10 degrees or less, or 5 degrees or less.

Further, the third duct 50 connects the gas supply port 331B of the third gas supply device 330 and the gas introduction port 5C provided in the third internal duct section 4C in the semiconductor manufacturing system 1 . In FIG. 1, the symbol Ce indicates the center of the gas supply port 331B, and the symbol Cf indicates the center of the gas introduction port 5C. Reference L3 denotes a virtual straight line connecting the center Ce of the gas supply port 331B and the center Cf of the gas introduction port 5C.

The angle between the straight line L3 and the vertical direction is also 0 degrees or more and 45 degrees or less, more specifically, about 30 degrees. The third duct 50 connects the gas supply port 331B and the gas introduction port 5C in a state in which it extends straight from the gas supply port 331B to the gas introduction port 5C and extends with its central axis C3 aligned with the straight line L3. there is That is, the center axis CC of the third duct 50 and the straight line L3 are aligned.

In the illustrated example, both ends of the third duct 50 are obliquely cut so that the third duct 50 extends with its central axis C3 aligned with the straight line L3. However, as shown in the figure, the gas supply port 331B of the third gas supply device 330 and the gas introduction port 5C provided in the third internal duct portion 4C are displaced in the horizontal direction, and the angle formed by the straight line L3 with the vertical direction UD is is greater than 0 degrees, the central axis C3 of the third duct 50 in the portion excluding at least one end of the both ends of the third duct 50 and the straight line L3 are aligned. A third duct 50 may connect the gas supply port 331B and the gas introduction port 5C. That is, a portion including at least one end of both ends of the third duct 50 is bent, and the remaining portion of the third duct 50 extends so as to align the central axis L3 with the straight line L3. A 3-duct 50 may connect the gas supply port 331B and the gas introduction port 5C. In this case, 50% or more, preferably 60% or more, more preferably 75% or more, and still more preferably 90% or more of the third duct 50 preferably coincides with the straight line L3. The length of the duct and the pressure loss can be suppressed as the portion where the central axis L3 coincides with the straight line L3 increases.

Further, the gas supply ports (311B, 321B, 331B) may be opened horizontally or obliquely, and the gas introduction ports (5A, 5B, 5C) may be opened horizontally or obliquely. In this case, the central axis of the gas supply ports (311B, 321B, 331B) and the central axis of the gas introduction ports (5A, 5B, 5C) are non-parallel. In such a case, the ducts (30, 40, 50) may be connected in the following manner.
(1) The angle formed by the straight lines (L1, L2, L3) with the vertical direction UD is 0 degrees, and the central axis of the duct in a portion excluding a portion including one end of both ends of the duct; A duct connects the gas supply port and the gas introduction port so that the straight lines (L1, L2, L3) are aligned.
(2) When the angle formed by the straight lines (L1, L2, L3) with the vertical direction UD is not 0 degree, the duct has a gas inlet and a gas supply port at a portion extending parallel to the vertical direction UD and a curved portion. to connect.

When connecting in the above (1), 50% or more, preferably 60% or more, more preferably 75% or more, and still more preferably 90% or more of the duct may coincide with the central axis C3 with the straight line L3. preferable. When connecting in (2) above, 50% or more, preferably 60% or more, more preferably 75% or more, and even more preferably 90% or more of the duct preferably extends parallel to the vertical direction UD.

The types of the first duct 30, the second duct 40 and the third duct 50 are not particularly limited, and they may be bendable flexible ducts or non-bendable rigid ducts. In the present embodiment, since both the first duct 30 and the second duct 40 extend straight, there is no need for bending and pressure loss is suppressed. Therefore, a rigid duct may be used to further suppress pressure loss and reduce costs. Moreover, the first duct 30, the second duct 40, and the third duct 50 may have circular or rectangular cross-sectional shapes. That is, the first duct 30, the second duct 40 and the third duct 50 may be circular ducts or rectangular ducts.

(action/effect)
Next, the operation of this embodiment will be described.

The refrigerating cycle device 100 controls the temperature of the liquid in the liquid circulation device 200 with the refrigerant in the first evaporator 104 . The liquid circulation system 200 sends the liquid temperature-controlled by the refrigerant in the first evaporator 104 to the first heat exchanger 211 , the second heat exchanger 212 and the third heat exchanger 213 . The first heat exchanger 211 controls the temperature of the air in the first gas supply device 310 with the liquid whose temperature is controlled by the refrigerant. The second heat exchanger 212 temperature-controls the air in the second gas supply device 320 with the liquid whose temperature is controlled by the refrigerant. The third heat exchanger 213 temperature-controls the air in the third gas supply device 330 with the liquid whose temperature is controlled by the refrigerant.

Then, in the first gas supply device 310 , the air is cooled by the first heat exchanger 211 , heated by the heater 314 , and then humidified by the humidifier 315 . After that, the air flows into the first duct 30 from the gas supply port 311B. Then, the air received from the first duct 30 into the gas introduction port 5A of the first internal duct portion 4A passes through the inside of the first internal duct portion 4A in the semiconductor manufacturing system 1, and then from the receiving port 3A of each developing device 2A. It is supplied to the processing chamber 3 of each developing device 2A.

Similarly, in the second gas supply device 320 , air is cooled by the second heat exchanger 212 , then heated by the heater 324 and then humidified by the humidifier 325 . After that, air flows into the second duct 40 from the gas supply port 321B. Then, the air received from the second duct 40 into the gas introduction port 5B of the second internal duct portion 4B passes through the inside of the second internal duct portion 4B in the semiconductor manufacturing system 1 and passes through the receiving port of each resist film forming apparatus 2B. 3B is supplied to the processing chamber 3 of each resist film forming apparatus 2B.

Similarly, in the third gas supply device 330 , the air is cooled by the third heat exchanger 213 , heated by the heater 334 , and then humidified by the humidifier 335 . After that, air flows into the third duct 50 from the gas supply port 331B. Then, the air received from the third duct 50 into the gas introduction port 5C of the third internal duct portion 4C passes through the inside of the third internal duct portion 4C in the semiconductor manufacturing system 1 and passes through the receiving port of each functional film forming apparatus 2C. to the processing chamber 3 of each functional film forming apparatus 2C.

In the temperature control system S<b>1 as described above, the liquid circulation device 200 is interposed between the refrigeration cycle device 100 and the first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 . In this case, it is possible to bring the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 closer to the corresponding temperature control target without bringing the refrigeration cycle device 100 closer to the temperature control target. . Specifically, in the present embodiment, the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 are brought closer to the corresponding temperature control targets. As a result, changes in pressure loss and temperature and/or humidity of the gas (air) occurring from the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 to the corresponding temperature controlled object. can be suppressed.

Specifically, in a general structure where the refrigerant of the refrigeration cycle device directly controls the temperature of the gas and supplies it to the temperature controlled object, if the distance from the refrigeration cycle device to the temperature controlled object is long, the gas is allowed to flow. Ducts can be long. Therefore, the pressure loss to the gas and changes in the temperature and/or humidity of the gas can become large. For example, the temperature of the air is controlled by the first evaporator 104 at the position of the refrigeration cycle apparatus 100 in FIG. In a general configuration in which three ducts are branched to send air to the processing chamber 3 of the apparatus 2C, the length of each duct is long. In this case, the pressure loss increases and the change in the state of the air can also become large. On the other hand, for example, installing a dedicated refrigerating cycle device directly under each of the processing chamber 3 of the developing device 2A, the processing chamber 3 of the resist film forming device 2B, and the processing chamber 3 of the functional film forming device 2C is not energy saving or efficient. , it cannot be said to be desirable from the standpoint of facility costs.

On the other hand, the temperature control system S<b>1 temperature-controls the air via the liquid circulated by the liquid circulation device 200 with the refrigerant of the refrigeration cycle device 100 . This makes it possible to bring the air temperature control position closer to the temperature control target. Specifically, it is possible to bring the air temperature control position in the first gas supply device 310 closer to the processing chamber 3 of the developing device 2A and the gas introduction port 5A corresponding to the processing chamber 3 . It is possible to bring the temperature control position of the air in the second gas supply device 320 close to the processing chamber 3 of the resist film forming device 2B and the gas introduction port 5B corresponding to the processing chamber 3 . Further, it is possible to bring the temperature control position of the air in the third gas supply device 330 close to the processing chamber 3 of the functional film forming device 2C and the gas introduction port 5C corresponding to the processing chamber 3 . Therefore, the problems of pressure loss and temperature and/or humidity changes that can occur in general structures can be eliminated. In addition, compared to the case where a dedicated refrigerating cycle device separate from the refrigerating cycle device 100 is installed directly below the processing chamber 3 of the resist film forming device 2B and the processing chamber 3 of the functional film forming device 2C, for example, the temperature control system The footprint of S1 can be significantly reduced.

Therefore, according to the temperature control system S1 according to the present embodiment, it becomes easy to control the gas supplied to the temperature controlled object to a desired state with high accuracy while suppressing the energy consumption.

In the present embodiment, as described above, the temperature control position of the air in the first gas supply device 310 is set to the processing chamber 3 of the developing device 2A and the processing chamber 3 of the developing device 2A without bringing the refrigeration cycle device 100 close to the temperature control object. It becomes possible to approach the gas introduction port 5A corresponding to the chamber 3. It is possible to bring the temperature control position of the air in the second gas supply device 320 close to the processing chamber 3 of the resist film forming device 2B and the gas introduction port 5B corresponding to the processing chamber 3 . Further, it is possible to bring the temperature control position of the air in the third gas supply device 330 close to the processing chamber 3 of the functional film forming device 2C and the gas introduction port 5C corresponding to the processing chamber 3 . Accordingly, the gas supply port 311B of the first gas supply device 310 can be brought closer to the processing chamber 3 of the developing device 2A and the gas introduction port 5A corresponding to the processing chamber 3 . It is possible to bring the gas supply port 321B of the second gas supply device 320 close to the processing chamber 3 of the resist film forming device 2B and the gas introduction port 5B corresponding to the processing chamber 3 . It is possible to bring the gas supply port 331B of the third gas supply device 330 close to the processing chamber 3 of the functional film forming device 2C and the gas introduction port 5C corresponding to the processing chamber 3 . As a result, the angle between the vertical direction and the straight line connecting the centers of the gas supply ports 311B, 321B, and 331B and the centers of the gas introduction ports 5A, 5B, and 5C can be set to, for example, 0 degrees or more and 45 degrees or less, and the first duct can be 30, the length of the second duct 40 and the third duct 50 can be effectively reduced. Thereby, the amount of energy consumed in the semiconductor manufacturing plant P can be effectively suppressed.

In the semiconductor manufacturing plant P, when installing the first gas supply device 310, the second gas supply device 320 and the third gas supply device 330 as described above, first, the temperature control system S1 is prepared. Next, the gas supply device 300 (310, 320, 330) and the refrigeration cycle device 100 are arranged so as to supply the air from the gas supply device 300 to the processing chamber 3 as the object of temperature control. In the step of arranging the gas supply device 300 and the refrigeration cycle device 100, the gas supply device 300 (310, 320, 330) is arranged at a position closer to the gas inlet ports 5A, 5B, 5C than the refrigeration cycle device 100 is. In this example, the gas inlets 5A, 5B, 5C and the refrigerating cycle device 100 are arranged so that they are horizontally separated from each other. In this example, regarding the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330, the centers of the gas supply ports 311B, 321B, and 331B and the centers of the gas introduction ports 5A, 5B, and 5C The first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 are arranged so that the angle between the straight lines L1, L2, and L3 connecting the placed. That is, the liquid circulation device 200 allows the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 to be brought closer to the corresponding gas introduction ports 5A, 5B, 5C. By suppressing the length of the duct, pressure loss in the duct can be suppressed.
The state in which the gas supply device 300 is closer to the gas inlet than the refrigeration cycle device 100 means that the shortest distance between the gas supply device 300 and the gas inlet is between the refrigeration cycle device 100 and the gas inlet. This means that the distance is smaller than the shortest distance of When the gas supply device 300 and the refrigeration cycle device 100 each have a housing, the shortest distance is compared between the housing of the gas supply device 300 and the gas introduction port and the housing of the refrigeration cycle device 100. The shortest distance to the gas inlet is compared. Further, when the gas supply device 300 and the refrigeration cycle device 100 do not have a housing or have a common housing, the comparison of the shortest distance is based on the air temperature control position (the position of the heat exchanger) of the gas supply device 300. and the gas inlet, and the shortest distance between the position of the first evaporator 104 of the refrigeration cycle apparatus 100 and the gas inlet.

<Second Embodiment>
Next, a second embodiment will be described. FIG. 3 is a schematic diagram of the temperature control system S2 according to the second embodiment. Components of the present embodiment that are the same as those of the first embodiment are denoted by the same reference numerals, and overlapping descriptions are omitted.

In the present embodiment, refrigeration cycle device 100 includes hot gas branch flow path 120 . The first heater 353 and the second heater 354 in the first fluid circulation device 350 heat the temperature control liquid using the high-temperature refrigerant supplied from the hot gas branch channel 120 . This embodiment differs from the first embodiment in these configurations.

The hot gas branch flow path 120 extends from a portion downstream of the compressor 101 and upstream of the condenser 102 in the main refrigerant circuit 100A, and bifurcates along the way to form a first heater 353 and a second heater. passes through vessel 354 and then joins. The hot gas branch flow path 120 has its downstream end connected to the downstream side of the compressor 101 in the main refrigerant circuit 100A in order to return the refrigerant that has flowed out of the first heater 353 and the second heater 354 to the main refrigerant circuit 100A. and is connected downstream of the connection position of the upstream end of the hot gas branch channel 120 in the upstream portion of the condenser 102 .

The first heater 353 and the second heater 354 can heat the temperature control liquid by exchanging heat between the high-temperature refrigerant circulated through the hot gas branch flow path 120 and the temperature control liquid.

According to the second embodiment, energy consumption is effectively reduced by using the hot gas in the refrigeration cycle device 100 instead of the electric heater for heating the temperature control liquid, which is the fluid in the first fluid circulation device 350. can be suppressed.

<Third Embodiment>
Next, a third embodiment will be described. FIG. 4 is a schematic diagram of the temperature control system S3 according to the third embodiment. Components of the present embodiment that are the same as those of the first and second embodiments are denoted by the same reference numerals, and overlapping descriptions are omitted.

A temperature control system S3 according to the present embodiment includes an air refrigeration cycle device 400 as a refrigeration cycle device. In addition, the liquid circulation device 200 includes a first liquid circuit 240 for circulating a first liquid whose temperature is controlled by air, which is a refrigerant circulated by the air refrigeration cycle device 400, and a second liquid whose temperature is controlled by the first liquid. and a second liquid circuit 250 for circulation. The first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 supply air whose temperature is controlled by the second gas to the temperature controlled object. This embodiment differs from the first embodiment in these configurations.

The air refrigeration cycle device 400 has piping so that air circulates in this order through a compressor 401, an endothermic heat exchanger 402, a recovery heat exchanger 403, an expander 404, and a control heat exchanger 405. A refrigerant circuit 406 connected by members is provided. After being compressed by the compressor 401 , the air is stepwise cooled by the endothermic heat exchanger 402 and the recovery heat exchanger 403 and then flows into the expander 404 . The air is then expanded by expander 404 and exits expander 404 . The air refrigeration cycle device 400 is capable of lowering the temperature of the air expanded by the expander 404 to −70° C. or less, more specifically −70° C. to −110° C., and allowing it to flow into the heat exchanger 405 for control. . Further, the air refrigeration cycle device 400 can control the air expanded by the expander 404 within the range of -40°C to -70°C.

The control heat exchanger 405 is connected to the first liquid circuit 240 in the liquid circulator 200, and the air flowing into the control heat exchanger 405 controls the temperature of the first liquid in the first liquid circuit 240. , out of the control heat exchanger 405 and sent to the compressor 401 .

The air that has flowed out of the control heat exchanger 405 exchanges heat with the air that has flowed out of the endothermic heat exchanger 402 in the recovery heat exchanger 403 before returning to the compressor 401 . As a result, the air before flowing into the expander 404 is stepwise cooled in the endothermic heat exchanger 402 and the heat recovery heat exchanger 403 . The endothermic heat exchanger 402 may cool the high-pressure air flowing out of the compressor 401 by, for example, cooling water as a cooling medium. The endothermic heat exchanger 402 may be a liquid-cooled cooler or an air-cooled cooler, and is not particularly limited.

Compressor 401 and expander 404 are connected to common drive shaft 407A of motor 407 . As a result, the rotation of the drive shaft 407A rotates the compressor 401 and the expander 404 in conjunction with each other.

The air refrigeration cycle device 400 also includes a hot gas circuit 408 . The hot gas circuit 408 includes a refrigerant branch passage 409 through which air flows, a first hot gas heat exchanger 410 provided in the refrigerant branch passage 409 through which air passes, and a first hot gas heat exchanger in the refrigerant branch passage 409. a second hot gas heat exchanger 411 provided in a portion downstream of 410 and allowing air to pass through.

The refrigerant branch passage 409 branches off from a portion of the refrigerant circuit 406 downstream of the compressor 401 and upstream of the endothermic heat exchanger 402 and is connected to the refrigerant circuit 406 again. Specifically, the refrigerant branch 409 is reconnected to the refrigerant circuit 406 at a position downstream of the recovery heat exchanger 403 in a portion of the refrigerant circuit 406 downstream of the compressor 401 and upstream of the expander 404 . be. In FIG. 4, the illustration of part of the refrigerant branch passage 409 is omitted for simplification of illustration. Between Y1-Y1' and between Y2-Y2' in FIG.

The hot gas circuit 408 also includes a first three-way valve 412 , a second three-way valve 413 , a first bypass line 414 and a second bypass line 415 .

The first three-way valve 412 is provided in the upstream side of the first hot gas heat exchanger 410 in the refrigerant branch passage 409, and constitutes a part of the refrigerant branch passage 409 with two of the three ports. The first bypass 414 is connected to the remaining port of the first three-way valve 412 and downstream of the first hot gas heat exchanger 410 in the refrigerant branch 409 and of the second hot gas heat exchanger 411. It is connected to the upstream part and bypasses the refrigerant.

The second three-way valve 413 is provided in a portion of the refrigerant branch 409 downstream of the first hot gas heat exchanger 410 and upstream of the second hot gas heat exchanger 411, and two of the three ports A part of the refrigerant branch channel 409 is composed of one port. The second bypass passage 415 is connected to the remaining port of the second three-way valve 413 and is connected to a downstream portion of the second hot gas heat exchanger 411 in the refrigerant branch passage 409 to bypass the refrigerant. .

The hot gas circuit 408 as described above is used for heating the first liquid in the first liquid circuit 240 as described later.

On the other hand, the first liquid circuit 240 has a main circuit 240A and a secondary circuit 240B. The main circuit 240A is connected to the heat exchanger 405 for control. The main circuit 240A exchanges heat between the first liquid and the air flowing into the control heat exchanger 405 at the connection portion with the control heat exchanger 405, whereby the temperature of the first liquid is controlled by the air. be. The main circuit 240</b>A has a first liquid heat exchanger 241 through which the first liquid flowing out of the control heat exchanger 405 is returned to the control heat exchanger 405 . The first liquid heat exchanger 241 is connected to the second liquid circuit 250 and controls the temperature of the second liquid with the first liquid.

The secondary circuit 240B also has a first liquid branch 242 and a second liquid heat exchanger 243 . The first liquid branch passage 242 is branched from a portion of the main circuit 240A downstream of the temperature control position by the control heat exchanger 405 and upstream of the first liquid heat exchanger 241 and reconnected to the main circuit 240A. and allows the first liquid to flow. The second liquid heat exchanger 243 is provided in the first liquid branch passage 242 and allows the first liquid to pass therethrough. The illustrated first liquid branch passage 242 branches from a portion of the main circuit 240A downstream of the temperature control position by the control heat exchanger 405 and upstream of the first liquid heat exchanger 241, but is limited to this. can't The first liquid branch path 242 may branch from a portion downstream of the first liquid heat exchanger 241 and upstream of the temperature control position by the control heat exchanger 405 . The illustrated first liquid branch passage 242 is downstream of the first liquid heat exchanger 241 in the main circuit 240A and upstream of the temperature control position by the control heat exchanger 405. Reconnected. When the first liquid branch path 242 branches from a portion downstream of the first liquid heat exchanger 241 and upstream of the temperature control position by the control heat exchanger 405, the first liquid branch path 242 is , are reconnected at a portion downstream of the branched location.

The second liquid heat exchanger 243 in the secondary circuit 240B is connected to the first fluid circulation device 350, and temperature-controls the temperature control liquid in the first fluid circulation device 350 with the first liquid. Although not shown, the first liquid circuit 240 includes a pump for causing the first liquid to flow.

The first hot gas heat exchanger 410 in the hot gas circuit 408 described above is connected to the upstream portion of the second liquid heat exchanger 243 in the first liquid branch 242 . This allows the first hot gas heat exchanger 410 to heat the first liquid flowing through the portion of the first liquid branch 242 upstream of the second liquid heat exchanger 243 with the air that is passed therethrough. Here, the first three-way valve 412 can switch between a state in which the air flows to the first hot gas heat exchanger 410 and a state in which the air is bypassed so that the air does not flow to the first hot gas heat exchanger 410. can. As a result, the first three-way valve 412 can switch between a state in which the air heats the first liquid flowing through the first liquid branch passage 242 and a state in which the air does not heat the first liquid. Note that the first hot gas heat exchanger 410 may be connected to a portion of the first liquid branch 242 downstream of the first liquid heat exchanger 241 .

In addition, the second hot gas heat exchanger 411 is connected to a portion of the main circuit 240A downstream of the connecting position of the first liquid branch passage 242 and upstream of the first liquid heat exchanger 241 . This allows the second hot gas heat exchanger 411 to heat the first liquid flowing through the main circuit 240A. Here, the second three-way valve 413 can switch between a state in which the air flows to the second hot gas heat exchanger 411 and a state in which the air is bypassed so that the air does not flow to the second hot gas heat exchanger 411. can. Thereby, the second three-way valve 413 can switch between a state in which the air heats the first liquid flowing through the main circuit 240A and a state in which the air does not heat the first liquid.

The second liquid circuit 250 has basically the same configuration as the liquid circulator 200 of the first embodiment. That is, the second liquid circuit 250 includes a tank 201 that stores the second liquid, a pump 202 that pumps out the second liquid from the tank 201, and a second liquid circuit that is arranged in parallel and allows the second liquid flowing out of the pump 202 to pass through. A first heat exchanger 211 , a second heat exchanger 212 and a third heat exchanger 213 are provided.

As described above, the second liquid circuit 250 connects with the first liquid heat exchanger 241, which temperature-controls the second liquid with the first liquid. The second liquid whose temperature is controlled by the first liquid in the first liquid heat exchanger 241 is sent to the first heat exchanger 211 , the second heat exchanger 212 and the third heat exchanger 213 by driving the pump 202 . Then, the first gas supply device 310 supplies the air whose temperature is controlled by the second liquid passing through the first heat exchanger 211 to the temperature controlled object by its blower 316 . The second gas supply device 320 supplies air whose temperature is controlled by the second liquid passing through the second heat exchanger 212 to the temperature controlled object by its blower 326 . The third gas supply device 330 supplies the air whose temperature is controlled by the second liquid passing through the third heat exchanger 213 with its fan 336 to the temperature controlled object.

An operation example of the temperature control system S3 will be described below. The temperature control system S3 can switch between a cooling operation, a heating operation, and a combination operation of cooling and heating. FIG. 5 is an explanatory diagram of the cooling operation. FIG. 6 is an explanatory diagram of the heating operation. FIG. 7 is an explanatory diagram of a combination operation of cooling and heating.

In the cooling operation shown in FIG. 5, air discharged from the compressor 401 is not sent to the hot gas circuit 408 . In this case, the first liquid and the second liquid in the liquid circulation device 200 are cooled early.

In the heating operation shown in FIG. 6, the air discharged from the compressor 401 is sent only to the hot gas circuit 408, and the air is not sent to the endothermic heat exchanger 402 side. In this case, the temperatures of the first liquid and the second liquid in the liquid circulation device 200 are raised early.

In the combination operation shown in FIG. 7, the air discharged from the compressor 401 is sent to the endothermic heat exchanger 402 side and the hot gas circuit 408 . In this case, the temperatures of the first liquid and the second liquid in the liquid circulation device 200 can be finely adjusted.

When the target temperature of the first liquid is higher than the post-expansion air temperature in general air refrigeration cycle operation, such as -20 to -40°C, cooling operation, hot gas operation, and combination operation are performed in this order. , the control time to the target temperature can be shortened. However, the operating state of the temperature control system S3 is not particularly limited.

In the temperature control system S3 according to the third embodiment described above, the same effects as those of the first embodiment can be obtained. Further, by interposing the first liquid circuit 240 between the refrigerating cycle device 100 and the second liquid circuit 250, it becomes easier to flexibly adjust the temperature control of the second liquid.

<Fourth Embodiment>
Next, a fourth embodiment will be described. FIG. 8 is a schematic diagram of the temperature control system S4 according to the fourth embodiment. Among the components of this embodiment, the same components as those of the first to third embodiments are denoted by the same reference numerals, and overlapping descriptions are omitted.

In this embodiment, the first gas supply device 310 of the plurality of gas supply devices 300 is integrated with part of the refrigeration cycle device 100 and the liquid circulation device 200 . On the other hand, the second gas supply device 320 and the third gas supply device 330 are separated from the refrigeration cycle device 100 .

<Fifth Embodiment>
Next, a fifth embodiment will be described. FIG. 9 is a schematic diagram of a semiconductor manufacturing plant as a manufacturing plant equipped with the temperature control system S5 according to the fifth embodiment. Among the components of this embodiment, the same components as those of the first to fourth embodiments are denoted by the same reference numerals, and overlapping descriptions are omitted.

This embodiment differs from the first embodiment in that the semiconductor manufacturing system 1 and the temperature control system S5 are installed on the same floor.

In the semiconductor manufacturing system 1, the configuration of the gas introduction ports 5A, 5B, 5C is different from that of the first embodiment. That is, the gas introduction port 5A of the first internal duct portion 4A connected to the developing device 2A is open on the side surface of the first internal duct portion 4A. In the illustrated example, the gas introduction port 5A opens horizontally. A gas introduction port 5B of the second internal duct portion 4B connected to the resist film forming apparatus 2B is opened on the side surface of the second internal duct portion 4B. In the illustrated example, the gas introduction port 5B opens horizontally. Although not shown, the gas introduction port 5C of the third internal duct portion 4C connected to the functional film forming apparatus 2C is also opened on the side surface of the third internal duct portion 4C.

Also in this embodiment, the gas supply device 300 includes a first gas supply device 310 , a second gas supply device 320 and a third gas supply device 330 . The first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 are provided at positions separated from the refrigeration cycle device 100 . The illustration of the third gas supply device 330 is omitted because it is positioned behind the second gas supply device 320 in the direction perpendicular to the plane of the drawing.

The first gas supply device 310 differs from the first embodiment in that the gas supply port 311B is opened on the side surface of the housing 311 . Specifically, the gas supply port 311B opens horizontally. The second gas supply device 320 is also different from the first embodiment in that the gas supply port 321B is opened on the side surface of the housing 321 . Specifically, the gas supply port 321B is also opened horizontally. Although not shown, the gas supply port 331B of the third gas supply device 330 is also opened on the side surface of the housing 331 .

The first gas supply device 310 incorporates a first heat exchanger 211 which is part of the liquid circulation device 200 . In the first gas supply device 310, the air flowing into the gas intake port 311A is first cooled by the first heat exchanger 211, as indicated by the two-dot chain arrow α1' in FIG. The air is then heated by heater 314 and then humidified by humidifier 315 . After that, the air flows into the first duct 30 from the gas supply port 311B. Here, in this embodiment, the orientation of the blower 316 is different from that in the first embodiment, and the air flowing out from the gas supply port 311B flows into the first duct 30 along the horizontal direction.

Further, in the present embodiment, the gas supply port 311B of the first gas supply device 310 and the gas introduction port 5A of the first internal duct portion 4A face each other in the horizontal direction. extends straight to connect the gas supply port 311B and the gas introduction port 5A. A straight line connecting the center of the gas supply port 311B and the center of the gas introduction port 5A is preferably at 0 degrees with the central axis of the gas introduction port 5A, but it is sufficient if the angle is less than 45 degrees. Also, the first gas supply device 310 is arranged at a position closer to the gas introduction port 5A than the refrigeration cycle device 100 is. As a result, the length of the duct can be reduced compared to a general structure in which the evaporator of the refrigeration cycle device supplies the gas with temperature control. Note that the gas supply port 311B and the gas introduction port 5A may be connected without providing the first duct 30 .

The second gas supply device 320 also incorporates a second heat exchanger 212 which is part of the liquid circulation device 200 . Also, in the second gas supply device 320, the orientation of the blower 326 is different from that in the first embodiment. In the second gas supply device 320, the air flowing into the gas intake port 321A is first cooled by the second heat exchanger 212, as indicated by the two-dot chain arrow α2' in FIG. The air is then heated by heater 324 and then humidified by humidifier 325 . After that, air flows into the second duct 40 along the horizontal direction from the gas supply port 321B. Note that the gas supply port 321B and the gas introduction port 5B may be connected without providing the second duct 40 .

Further, as in the case of the first gas supply device 310 side, the gas supply port 321B of the second gas supply device 320 and the gas introduction port 5B of the second internal duct portion 4B face each other in the horizontal direction. The second duct 40 extends straight in the horizontal direction and connects the gas supply port 321B and the gas introduction port 5B. A straight line connecting the center of the gas supply port 321B and the center of the gas introduction port 5B is preferably at 0 degree with the central axis of the gas introduction port 5B, but it is sufficient if the straight line is less than 45 degrees. Also, the second gas supply device 320 is arranged at a position closer to the gas introduction port 5B than the refrigeration cycle device 100 is. As a result, the length of the duct can be reduced compared to a general structure in which the evaporator of the refrigeration cycle device supplies the gas with temperature control.

The configuration of the third gas supply device 330 is also the same as the first gas supply device 310 and the second gas supply device 320 shown in FIG. The relationship between the gas supply port 331B of the third gas supply device 330 and the gas introduction port 5C of the third internal duct portion 4C is the same as that of the first gas supply device 310 and the second gas supply device 320 shown in FIG. becomes.

Also according to the present embodiment as described above, the liquid circulation device 200 is interposed between the refrigeration cycle device 100 and the first gas supply device 310 , the second gas supply device 320 and the third gas supply device 330 . This makes it possible to bring the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 closer to the corresponding temperature control target without bringing the refrigeration cycle device 100 closer to the temperature control target. . Then, the pressure loss to the gas (air) and the change in temperature and/or humidity of the air occurring from the first gas supply device 310, the second gas supply device 320, and the third gas supply device 330 to the corresponding temperature controlled object are measured. can be suppressed.

In particular, by installing the semiconductor manufacturing system 1 and the temperature control system S5 on the same floor, it becomes easier to reduce the length of the duct, and the pressure loss can be effectively suppressed.

<Sixth Embodiment>
Next, a sixth embodiment will be described. FIG. 10 is a schematic diagram of a semiconductor manufacturing plant as a manufacturing plant equipped with the temperature control system S6 according to the sixth embodiment. Among the components of this embodiment, the same components as those of the first to fifth embodiments are denoted by the same reference numerals, and overlapping descriptions are omitted.

In this embodiment, as in the fifth embodiment, the semiconductor manufacturing system 1 and the temperature control system S5 are installed on the same floor. However, it differs from the fifth embodiment in that the gas introduction ports 5A, 5B, 5C in the semiconductor manufacturing system 1 open downward. The gas supply port 311B of the first gas supply device 310 opens upward, the gas supply port 321B of the second gas supply device 320 opens upward, and the gas supply port 331B of the third gas supply device 330 (not shown) opens upward. It differs from the fifth embodiment in that it is open upward.

The first gas supply device 310 is positioned below the gas introduction port 5A in the semiconductor manufacturing system 1 . The first duct 30 extending from the gas supply port 311B of the first gas supply device 310 extends obliquely upward and is connected to the gas introduction port 5A. Similarly, the second gas supply device 320 is positioned below the gas introduction port 5B in the semiconductor manufacturing system 1 . The second duct 40 extending from the gas supply port 321B of the second gas supply device 320 extends obliquely upward and is connected to the gas introduction port 5B. This embodiment also provides the same effects as the fifth embodiment.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments. For example, although the temperature control system is applied to a semiconductor manufacturing plant in the above-described embodiments, the temperature control system can also be applied to other manufacturing plants.

S1, S2, S3, S4, S5, S6 Temperature control system 1 Semiconductor manufacturing system 2 Processing device 2A Developing device 2B Resist film forming device 2C Functional film forming device 3 Processing chamber 3A Receiving port 4 Internal duct 4A First internal duct portion 4B Second internal duct portion 4C Third internal duct portion 5A, 5B, 5C Gas introduction port 30 First duct 40 Second duct 50 Third duct 100 Refrigerant CYCLE DEVICE 100A Main refrigerant circuit 100B Secondary refrigerant circuit 101 Compressor 102 Condenser 103 First expansion valve 104 First evaporator 105 Branch passage 106 Second expansion valve 107 Second evaporator 110 Cooling water supply pipe 200 Liquid circulator 211 First heat exchanger 212 Second heat exchanger 213 Third heat exchanger 220 Main channel 221 First branch channel 222 Second branch channel 223... Third branch flow path 240... First liquid circuit 240A... Main circuit 240B... Secondary circuit 241... First liquid heat exchanger 242... First liquid branch path 243... Second liquid heat exchanger 250... Second liquid Circuit 300 Gas supply device 310 First gas supply device 311A Gas intake port 311B Gas supply port 316 Blower 320 Second gas supply device 321A Gas intake port 321B Gas supply port 326 Blower 330 Third gas supply device 331A Gas intake port 331B Gas supply port 336 Blower 350 First fluid circulation device 353 First heater 354 Second heater 356 Temperature control liquid main flow path 357 Third First temperature control liquid branch channel 358 Second temperature control liquid branch channel 400 Air refrigeration cycle device 401 Compressor 402 Endothermic heat exchanger 403 Recovery heat exchanger 404 Expander 405 Control heat exchanger Device 406...Refrigerant circuit 408...Hot gas circuit 409...Refrigerant branch path 410...First hot gas heat exchanger 411...Second hot gas heat exchanger 412...First three-way valve 413...Second three-way valve 414...First bypass Path 415: Second bypass path P: Semiconductor manufacturing plant

Claims (14)

a refrigeration cycle device that circulates a refrigerant;
a liquid circulation device that circulates a liquid whose temperature is controlled by the refrigerant;
and one or a plurality of gas supply devices for supplying a gas, the temperature of which is controlled by the liquid, to an object to be temperature-controlled by a blower. The temperature control system comprises a plurality of the gas supply devices,
The liquid circulation device has a plurality of heat exchangers arranged in parallel,
each of the plurality of heat exchangers passes the liquid whose temperature is controlled by the refrigerant;
2. The temperature control system according to claim 1, wherein each of said plurality of heat exchangers controls the temperature of said gas in a corresponding one of said plurality of gas supply devices with said liquid. The temperature control system further comprises a fluid flow device for flowing a fluid,
The refrigeration cycle device has a compressor, and a first evaporator and a second evaporator arranged in parallel for flowing the expanded refrigerant after being compressed by the compressor,
The first evaporator controls the temperature of the liquid in the liquid circulation device with the refrigerant,
the second evaporator controls the temperature of the fluid in the fluid circulation device with the refrigerant;
The refrigeration cycle device further has a hot gas branch flow path for branching a part of the refrigerant discharged from the compressor,
3. The temperature control system according to claim 1 or 2, wherein the refrigerant flowing through the hot gas branch heats the fluid in the fluid flow device. a refrigeration cycle device that circulates a refrigerant;
a liquid circulation device having a first liquid circuit for circulating a first liquid whose temperature is controlled by the refrigerant; and a second liquid circuit for circulating a second liquid whose temperature is controlled by the first liquid;
and one or a plurality of gas supply devices for supplying a gas, the temperature of which is controlled by the second liquid, to a temperature-controlled target using a blower. The refrigeration cycle device has a control heat exchanger that controls the temperature of the first liquid with the refrigerant to pass through,
The first liquid circuit is
Having a first liquid heat exchanger, the first liquid whose temperature is controlled by the control heat exchanger is passed through the first liquid heat exchanger and returned to the control heat exchanger, and the first liquid is a main circuit for temperature-controlling the second liquid with the first liquid in a heat exchanger;
a first liquid branch path branched from the main circuit and reconnected to the main circuit to flow the first liquid; and a second liquid heat provided in the first liquid branch path and allowing the first liquid to pass through. 5. The temperature control system of claim 4, comprising a secondary circuit having an exchanger. The first liquid branch is reconnected to the main circuit at a portion of the main circuit downstream of the first liquid heat exchanger and upstream of a temperature controlled position by the control heat exchanger. A temperature control system according to claim 5. The refrigeration cycle device is
a compressor, an endothermic heat exchanger that cools the refrigerant compressed by the compressor, an expander that expands the refrigerant flowing out of the endothermic heat exchanger, and a refrigerant flowing out of the expander that passes through a refrigerant circuit for sending the refrigerant flowing out of the control heat exchanger to the compressor;
a refrigerant branch path branched from a portion of the refrigerant circuit downstream of the compressor and upstream of the endothermic heat exchanger, reconnected to the refrigerant circuit, and allowing the refrigerant to flow; a hot gas circuit having a first hot gas heat exchanger provided in the passage and passing the refrigerant;
6. The first hot gas heat exchanger heats the first liquid flowing through a portion of the first liquid branch upstream of the second liquid heat exchanger with the refrigerant passed through the first hot gas heat exchanger. 7. Temperature control system according to 6. The hot gas circuit is provided in a portion upstream of the first hot gas heat exchanger in the refrigerant branch passage, and two of the three ports constitute a part of the refrigerant branch passage. A first bypass passage that is connected to a three-way valve and the remaining port of the first three-way valve, is connected to a downstream portion of the first hot gas heat exchanger in the refrigerant branch passage, and bypasses the refrigerant. 8. The temperature control system of claim 7, further comprising: The hot gas circuit further includes a second hot gas heat exchanger provided in a portion of the refrigerant branch downstream of the first hot gas heat exchanger and allowing the refrigerant to pass through,
8. The temperature control system of claim 7, wherein the second hot gas heat exchanger heats the first liquid flowing through the main circuit with the refrigerant passed through it. The second liquid circuit has a plurality of heat exchangers arranged in parallel,
each of the plurality of heat exchangers passes the second liquid whose temperature is controlled by the first liquid;
10. The plurality of heat exchangers according to any one of claims 4 to 9, wherein each of the plurality of heat exchangers controls the temperature of the gas in a corresponding one of the plurality of gas supply devices using the second liquid. temperature control system. 11. The temperature control system according to any one of claims 4 to 10, wherein said refrigeration cycle device is an air refrigeration cycle device that circulates air as said refrigerant. 12. The temperature control system according to any one of claims 1 to 11, wherein said gas supply device is separate from said refrigeration cycle device. a processing system comprising a processing device having a processing chamber supplied with a gas received at a gas inlet;
A manufacturing plant comprising a temperature control system according to any of claims 1-12. A method of installing equipment in a manufacturing plant provided with a processing system comprising a processing apparatus having a processing chamber supplied with a gas received at a gas inlet, the method comprising:
providing a temperature control system according to any one of claims 1 to 12;
and arranging the gas supply device and the refrigeration cycle device to supply the gas from the gas supply device to the processing chamber as the temperature control target.