JP2023071144A - マルチセルマッピングのための記憶システム及び方法 - Google Patents
マルチセルマッピングのための記憶システム及び方法 Download PDFInfo
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Abstract
Description
Claims (20)
- 複数のメモリセルを含むメモリダイであって、前記メモリセルのそれぞれは、2の累乗以外の数の状態を記憶するように構成されている、メモリダイと、
記憶のためにデータを前記メモリダイに提供するように構成されたコントローラと
を備える記憶システムであって、
前記メモリダイは、
2の累乗以外のマップを使用して、前記複数のメモリセル内の前記データを記憶する場所を決定し、
前記マップによって決定されたように、前記データを前記複数のメモリセル内に書き込むように構成されている、記憶システム。 - 前記データは、隣接するメモリセル内に書き込まれる、請求項1に記載の記憶システム。
- 前記2の累乗以外のマップは、修正された直交振幅変調(QAM)マップを含む、請求項1に記載の記憶システム。
- 前記QAMマップは、
前記QAMマップの半分を前記QAMマップの縁に反映させることと、
外側のシンボルを前記修正されたQAMマップの右上隅に移動させることとによって修正される、請求項3に記載の記憶システム。 - 前記QAMマップは、前記QAMマップを反映によって増加させることと、外側のシンボルを折り畳むこととによって修正される、請求項3に記載の記憶システム。
- 状態シェーピングを前記修正されたQAMマップに実行することを更に含む、請求項3に記載の記憶システム。
- 前記決定することは、前記メモリダイに接合された制御ダイによって実行される、請求項1に記載の記憶システム。
- 前記2の累乗以外の数は、23である、請求項1に記載の記憶システム。
- 前記メモリダイは、三次元メモリを含む、請求項1に記載の記憶システム。
- 複数のメモリセルを含むメモリダイを有する記憶システムにおいて、前記メモリセルのそれぞれは、2の累乗以外の数のレベルを記憶するように構成されており、方法は、
前記メモリダイ内に記憶される複数のデータビットを受信することと、
2の累乗以外のマップを使用して、前記複数のデータビットを前記複数のメモリセルにマッピングすることと、
前記マッピングに従って、前記複数のデータビットを前記メモリダイ内の前記複数のメモリセル内に記憶することとを含む、方法。 - 前記複数のデータビットは、複数の隣接する又は隣接しないメモリセルにマッピングされる、請求項10に記載の方法。
- 前記複数のデータビットは、修正された直交振幅変調(QAM)マップを使用してマッピングされる、請求項10に記載の方法。
- 前記QAMマップは、
前記QAMマップの半分を前記QAMマップの縁に反映させることと、
外側のシンボルを前記修正されたQAMマップの右上隅に移動させることによって修正される、請求項12に記載の方法。 - 前記QAMマップは、前記QAMマップを反映によって増加させることと、外側のシンボルを折り畳むこととによって修正される、請求項12に記載の方法。
- 状態シェーピングを前記修正されたQAMマップに実行することを更に含む、請求項12に記載の方法。
- 前記マッピングすることは、前記記憶システムのコントローラ、前記メモリダイ、又は前記メモリダイに接合された制御ダイのうちの1つによって実行される、請求項10に記載の方法。
- 前記複数のデータビットをデマッピングすることを更に含む、請求項10に記載の方法。
- 前記デマッピングすることは、前記記憶システムのコントローラ、前記メモリダイ、又は前記メモリダイに接合された制御ダイのうちの1つによって実行される、請求項10に記載の方法。
- 前記2の累乗以外の数は、23である、請求項10に記載の方法。
- 複数のメモリセルを含むメモリダイであって、前記メモリセルのそれぞれは、2の累乗以外の数の状態を記憶するように構成されている、メモリダイと、
2の累乗以外のマップを使用して、複数のデータビットを前記複数のメモリセルにマッピングするための手段と
を備える記憶システム。
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US17/523,124 US11822820B2 (en) | 2021-11-10 | 2021-11-10 | Storage system and method for multi-cell mapping |
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2021
- 2021-11-10 US US17/523,124 patent/US11822820B2/en active Active
-
2022
- 2022-05-23 JP JP2022083485A patent/JP2023071144A/ja active Pending
- 2022-05-23 CN CN202210565665.1A patent/CN116110460A/zh active Pending
- 2022-05-24 KR KR1020220063387A patent/KR20230068270A/ko unknown
Patent Citations (7)
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US20040080979A1 (en) * | 2002-10-25 | 2004-04-29 | Nexflash Technologies, Inc. | Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor |
JP2009524152A (ja) * | 2006-01-20 | 2009-06-25 | マーベル ワールド トレード リミテッド | 符号化及び信号処理機能を有するフラッシュメモリ |
JP2009529203A (ja) * | 2006-03-06 | 2009-08-13 | ラマト アット テル アビブ ユニバーシティ リミテッド | 非全単射写像を使用するマルチビットセルフラッシュメモリ装置 |
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US11138065B1 (en) * | 2020-05-20 | 2021-10-05 | Western Digital Technologies, Inc. | Storage system and method for fast low-density parity check (LDPC) encoding |
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US20230146046A1 (en) | 2023-05-11 |
US11822820B2 (en) | 2023-11-21 |
KR20230068270A (ko) | 2023-05-17 |
CN116110460A (zh) | 2023-05-12 |
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