JP2023070990A - 半導体発光素子、発光モジュール、及び発光モジュールの製造方法 - Google Patents

半導体発光素子、発光モジュール、及び発光モジュールの製造方法 Download PDF

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Publication number
JP2023070990A
JP2023070990A JP2021183532A JP2021183532A JP2023070990A JP 2023070990 A JP2023070990 A JP 2023070990A JP 2021183532 A JP2021183532 A JP 2021183532A JP 2021183532 A JP2021183532 A JP 2021183532A JP 2023070990 A JP2023070990 A JP 2023070990A
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Japan
Prior art keywords
layer
region
light emitting
bonding
emitting device
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Pending
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JP2021183532A
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English (en)
Japanese (ja)
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JP2023070990A5 (https=
Inventor
崇一 中澤
Shuichi Nakazawa
均典 廣木
Hiranori Hiroki
茂生 林
Shigeo Hayashi
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Nuvoton Technology Corp
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Nuvoton Technology Corp
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Publication date
Application filed by Nuvoton Technology Corp filed Critical Nuvoton Technology Corp
Priority to JP2021183532A priority Critical patent/JP2023070990A/ja
Priority to PCT/JP2022/040764 priority patent/WO2023085161A1/ja
Priority to CN202280074625.5A priority patent/CN118216052A/zh
Publication of JP2023070990A publication Critical patent/JP2023070990A/ja
Priority to US18/653,508 priority patent/US20240282901A1/en
Publication of JP2023070990A5 publication Critical patent/JP2023070990A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2021183532A 2021-11-10 2021-11-10 半導体発光素子、発光モジュール、及び発光モジュールの製造方法 Pending JP2023070990A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021183532A JP2023070990A (ja) 2021-11-10 2021-11-10 半導体発光素子、発光モジュール、及び発光モジュールの製造方法
PCT/JP2022/040764 WO2023085161A1 (ja) 2021-11-10 2022-10-31 半導体発光素子、発光モジュール、及び発光モジュールの製造方法
CN202280074625.5A CN118216052A (zh) 2021-11-10 2022-10-31 半导体发光元件、发光模块及发光模块的制造方法
US18/653,508 US20240282901A1 (en) 2021-11-10 2024-05-02 Semiconductor light-emitting element, light-emitting module, and method for manufacturing light-emitting module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021183532A JP2023070990A (ja) 2021-11-10 2021-11-10 半導体発光素子、発光モジュール、及び発光モジュールの製造方法

Publications (2)

Publication Number Publication Date
JP2023070990A true JP2023070990A (ja) 2023-05-22
JP2023070990A5 JP2023070990A5 (https=) 2024-10-07

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JP2021183532A Pending JP2023070990A (ja) 2021-11-10 2021-11-10 半導体発光素子、発光モジュール、及び発光モジュールの製造方法

Country Status (4)

Country Link
US (1) US20240282901A1 (https=)
JP (1) JP2023070990A (https=)
CN (1) CN118216052A (https=)
WO (1) WO2023085161A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116683286A (zh) * 2023-06-15 2023-09-01 厦门市三安光电科技有限公司 一种半导体激光器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278463A (ja) * 2005-03-28 2006-10-12 Dowa Mining Co Ltd サブマウント
JP2012227383A (ja) * 2011-04-20 2012-11-15 Showa Denko Kk 半導体発光素子、電極構造および発光装置
US20130062587A1 (en) * 2011-09-13 2013-03-14 Adesto Technologies Corp. Resistive Switching Devices Having Alloyed Electrodes And Methods of Formation Thereof
JP2014038886A (ja) * 2012-08-10 2014-02-27 Toshiba Corp 半導体装置及びその製造方法
WO2019150825A1 (ja) * 2018-02-01 2019-08-08 パナソニックＩｐマネジメント株式会社 半導体装置
US20210020595A1 (en) * 2019-07-16 2021-01-21 Nxp Usa, Inc. Semiconductor dies having ultra-thin wafer backmetal systems, microelectronic devices containing the same, and associated fabrication methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278463A (ja) * 2005-03-28 2006-10-12 Dowa Mining Co Ltd サブマウント
JP2012227383A (ja) * 2011-04-20 2012-11-15 Showa Denko Kk 半導体発光素子、電極構造および発光装置
US20130062587A1 (en) * 2011-09-13 2013-03-14 Adesto Technologies Corp. Resistive Switching Devices Having Alloyed Electrodes And Methods of Formation Thereof
JP2014038886A (ja) * 2012-08-10 2014-02-27 Toshiba Corp 半導体装置及びその製造方法
WO2019150825A1 (ja) * 2018-02-01 2019-08-08 パナソニックＩｐマネジメント株式会社 半導体装置
US20210020595A1 (en) * 2019-07-16 2021-01-21 Nxp Usa, Inc. Semiconductor dies having ultra-thin wafer backmetal systems, microelectronic devices containing the same, and associated fabrication methods

Also Published As

Publication number Publication date
CN118216052A (zh) 2024-06-18
US20240282901A1 (en) 2024-08-22
WO2023085161A1 (ja) 2023-05-19

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