JP2023043338A - 半導体装置の製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 285
- 238000010438 heat treatment Methods 0.000 claims abstract description 174
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 133
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 131
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 118
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 89
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 85
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000012298 atmosphere Substances 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 40
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims description 42
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 139
- 230000007547 defect Effects 0.000 abstract description 64
- 239000010410 layer Substances 0.000 description 212
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 230000000052 comparative effect Effects 0.000 description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 48
- 239000012535 impurity Substances 0.000 description 48
- 229910052760 oxygen Inorganic materials 0.000 description 48
- 239000001301 oxygen Substances 0.000 description 48
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 38
- 230000007423 decrease Effects 0.000 description 30
- 125000004433 nitrogen atom Chemical group N* 0.000 description 29
- 238000009826 distribution Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 21
- 239000001257 hydrogen Substances 0.000 description 19
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 230000004913 activation Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 229960001730 nitrous oxide Drugs 0.000 description 4
- 235000013842 nitrous oxide Nutrition 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910005883 NiSi Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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Abstract
Description
第1の実施形態の半導体装置の製造方法は、炭化珪素層の表面に酸化シリコン膜を形成し、酸化シリコン膜を形成した後に、窒素ガスを含む雰囲気で、1200℃以上1600℃以下の温度で第1の熱処理を行い、第1の熱処理の後に、窒素酸化物ガスを含む雰囲気で、750℃以上1050℃以下の温度で第2の熱処理を行う。
第2の実施形態の半導体装置の製造方法は、酸化シリコン膜を形成する前に、炭化珪素層に、水素ガスを含む雰囲気中で、第1の温度で第3の熱処理を行う点で、第1の実施形態の半導体装置の製造方法と異なる。また、第2の実施形態の半導体装置の製造方法は、酸化シリコン膜を形成した後、第1の熱処理の前に、炭化珪素層に、水素ガスを含む雰囲気中で、第2の温度で第4の熱処理を行う点で、第1の実施形態の半導体装置の製造方法と異なる。また、第2の実施形態の半導体装置の製造方法は、酸化シリコン膜を形成する前に、炭化珪素層に、アルミニウム(Al)及び炭素(C)のイオン注入を行う点で、第1の実施形態の半導体装置の製造方法と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
28 ゲート絶縁層
30 ゲート電極
40 界面終端領域
100 MOSFET(半導体装置)
Claims (13)
- 炭化珪素層の表面に酸化シリコン膜を形成し、
前記酸化シリコン膜を形成した後に、窒素ガスを含む雰囲気で、1200℃以上1600℃以下の温度で第1の熱処理を行い、
前記第1の熱処理の後に、窒素酸化物ガスを含む雰囲気で、750℃以上1050℃以下の温度で第2の熱処理を行う半導体装置の製造方法。 - 前記第1の熱処理の雰囲気中の前記窒素ガスの分圧は99%以上である請求項1記載の半導体装置の製造方法。
- 前記酸化シリコン膜は、気相成長により形成する請求項1又は請求項2記載の半導体装置の製造方法。
- 前記酸化シリコン膜は、600℃以下の温度で形成する請求項1ないし請求項3いずれか一項記載の半導体装置の製造方法。
- 前記第1の熱処理の時間は1時間以上である請求項1ないし請求項4いずれか一項記載の半導体装置の製造方法。
- 前記酸化シリコン膜を形成する前に、前記炭化珪素層に、プラズマ化した水素ガスを含む雰囲気中で、第1の温度で第3の熱処理を更に行う、請求項1ないし請求項5いずれか一項記載の半導体装置の製造方法。
- 前記第1の温度は0℃以上150℃以下である請求項6記載の半導体装置の製造方法。
- 前記酸化シリコン膜を形成した後、前記第1の熱処理の前に、前記炭化珪素層に、水素ガスを含む雰囲気中で、第2の温度で第4の熱処理を更に行う、請求項1ないし請求項7いずれか一項記載の半導体装置の製造方法。
- 前記第2の温度は1200℃以上1600℃以下である請求項8記載の半導体装置の製造方法。
- 前記酸化シリコン膜を形成する前に、プラズマ化した水素ガスを含む雰囲気中で、前記炭化珪素層に、第1の温度で第3の熱処理を更に行い、
前記酸化シリコン膜を形成した後、前記第1の熱処理の前に、前記炭化珪素層に、水素ガスを含む雰囲気中で、第1の温度よりも高い第2の温度で第4の熱処理を更に行う、請求項1ないし請求項5いずれか一項記載の半導体装置の製造方法。 - 前記酸化シリコン膜を形成する前に、前記炭化珪素層に、アルミニウム(Al)及び炭素(C)のイオン注入を更に行う請求項1ないし請求項10いずれか一項記載の半導体装置の製造方法。
- 前記酸化シリコン膜の厚さは30nm以上100nm以下である請求項1ないし請求項11いずれか一項記載の半導体装置の製造方法。
- 前記酸化シリコン膜の上にゲート電極を更に形成する請求項1ないし請求項12いずれか一項記載の半導体装置の製造方法。
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