JP2023002536A - 機能化された粉末原料からナノ構造の相を有するワークピースの製造 - Google Patents
機能化された粉末原料からナノ構造の相を有するワークピースの製造 Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 89
- 239000000463 material Substances 0.000 claims abstract description 149
- 238000000034 method Methods 0.000 claims abstract description 109
- 238000000576 coating method Methods 0.000 claims abstract description 76
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000000654 additive Substances 0.000 claims abstract description 21
- 238000001746 injection moulding Methods 0.000 claims abstract description 20
- 230000000996 additive effect Effects 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000011248 coating agent Substances 0.000 claims description 48
- 239000002994 raw material Substances 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 35
- 239000000126 substance Substances 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 21
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 18
- 150000002739 metals Chemical class 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 14
- -1 physical vapor Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 13
- 238000001125 extrusion Methods 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000010146 3D printing Methods 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 11
- 239000000446 fuel Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011244 liquid electrolyte Substances 0.000 claims description 6
- 239000007784 solid electrolyte Substances 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910000951 Aluminide Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000002144 chemical decomposition reaction Methods 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000004530 micro-emulsion Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 3
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 36
- 238000004663 powder metallurgy Methods 0.000 abstract description 8
- 239000000470 constituent Substances 0.000 abstract description 6
- 230000036961 partial effect Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 abstract description 2
- 239000012071 phase Substances 0.000 description 273
- 230000008569 process Effects 0.000 description 69
- 239000002245 particle Substances 0.000 description 54
- 238000005516 engineering process Methods 0.000 description 47
- 239000010410 layer Substances 0.000 description 33
- 238000000231 atomic layer deposition Methods 0.000 description 27
- 239000007983 Tris buffer Substances 0.000 description 21
- 238000009826 distribution Methods 0.000 description 20
- 238000010348 incorporation Methods 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 239000000047 product Substances 0.000 description 13
- 238000011282 treatment Methods 0.000 description 12
- 210000004027 cell Anatomy 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000007787 solid Substances 0.000 description 10
- 238000013459 approach Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000004927 fusion Effects 0.000 description 8
- 238000000227 grinding Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 229910001069 Ti alloy Inorganic materials 0.000 description 6
- 229920001400 block copolymer Polymers 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 229910001175 oxide dispersion-strengthened alloy Inorganic materials 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 5
- 125000003368 amide group Chemical group 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000003801 milling Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000012805 post-processing Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000010959 steel Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
- 229910052771 Terbium Inorganic materials 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000001627 detrimental effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000011858 nanopowder Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005191 phase separation Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- VYXHVRARDIDEHS-UHFFFAOYSA-N 1,5-cyclooctadiene Chemical compound C1CC=CCCC=C1 VYXHVRARDIDEHS-UHFFFAOYSA-N 0.000 description 2
- 239000004912 1,5-cyclooctadiene Substances 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 229910052695 Americium Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052685 Curium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052687 Fermium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052766 Lawrencium Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052781 Neptunium Inorganic materials 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052789 astatine Inorganic materials 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910021475 bohrium Inorganic materials 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005056 compaction Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 229910001850 copernicium Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 description 2
- RVIXKDRPFPUUOO-UHFFFAOYSA-N dimethylselenide Chemical compound C[Se]C RVIXKDRPFPUUOO-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- CBMIPXHVOVTTTL-UHFFFAOYSA-N gold(3+) Chemical compound [Au+3] CBMIPXHVOVTTTL-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910021473 hassium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- CZMAIROVPAYCMU-UHFFFAOYSA-N lanthanum(3+) Chemical compound [La+3] CZMAIROVPAYCMU-UHFFFAOYSA-N 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- PSDMOPINLDTFSZ-UHFFFAOYSA-N lutetium(3+) Chemical compound [Lu+3] PSDMOPINLDTFSZ-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000013384 organic framework Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 230000005433 particle physics related processes and functions Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910021481 rutherfordium Inorganic materials 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910021477 seaborgium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052713 technetium Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- MRMOZBOQVYRSEM-UHFFFAOYSA-N tetraethyllead Chemical compound CC[Pb](CC)(CC)CC MRMOZBOQVYRSEM-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 2
- YWWDBCBWQNCYNR-UHFFFAOYSA-N trimethylphosphine Chemical compound CP(C)C YWWDBCBWQNCYNR-UHFFFAOYSA-N 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000010977 unit operation Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- BUYVJWVYKPKZEX-DWVXZKBMSA-N (1z,5z)-cycloocta-1,5-diene;(z)-4-hydroxypent-3-en-2-one;rhodium Chemical compound [Rh].C\C(O)=C\C(C)=O.C\1C\C=C/CC\C=C/1 BUYVJWVYKPKZEX-DWVXZKBMSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MLHSFTRXWHJIHL-ORWWTJHYSA-N (e)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one;zinc Chemical compound [Zn].CC(C)(C)C(\O)=C/C(=O)C(C)(C)C.CC(C)(C)C(\O)=C/C(=O)C(C)(C)C MLHSFTRXWHJIHL-ORWWTJHYSA-N 0.000 description 1
- WLITYJBILWOYFF-GECNZSFWSA-N (z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one;(e)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one;iron Chemical compound [Fe].CC(C)(C)C(\O)=C/C(=O)C(C)(C)C.CC(C)(C)C(\O)=C/C(=O)C(C)(C)C.CC(C)(C)C(\O)=C\C(=O)C(C)(C)C WLITYJBILWOYFF-GECNZSFWSA-N 0.000 description 1
- FASACKQUUCTDAW-UHFFFAOYSA-N 1,2,3,4,5-pentamethylcyclopenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC=1C(C)=C(C)[C-](C)C=1C.CC=1C(C)=C(C)[C-](C)C=1C FASACKQUUCTDAW-UHFFFAOYSA-N 0.000 description 1
- OFDISMSWWNOGFW-UHFFFAOYSA-N 1-(4-ethoxy-3-fluorophenyl)ethanamine Chemical compound CCOC1=CC=C(C(C)N)C=C1F OFDISMSWWNOGFW-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- OFYFURKXMHQOGG-UHFFFAOYSA-J 2-ethylhexanoate;zirconium(4+) Chemical compound [Zr+4].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O OFYFURKXMHQOGG-UHFFFAOYSA-J 0.000 description 1
- IVXUPDRNSUCVNX-UHFFFAOYSA-N 2-methoxyethanolate;yttrium(3+) Chemical compound [Y+3].COCC[O-].COCC[O-].COCC[O-] IVXUPDRNSUCVNX-UHFFFAOYSA-N 0.000 description 1
- OSXGKVOYAKRLCS-UHFFFAOYSA-N 2-methylpropan-2-olate;tin(4+) Chemical compound CC(C)(C)O[Sn](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C OSXGKVOYAKRLCS-UHFFFAOYSA-N 0.000 description 1
- GRWPYGBKJYICOO-UHFFFAOYSA-N 2-methylpropan-2-olate;titanium(4+) Chemical compound [Ti+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] GRWPYGBKJYICOO-UHFFFAOYSA-N 0.000 description 1
- JUZFIKNKHJDVBA-UHFFFAOYSA-N 2-methylpropan-2-olate;yttrium(3+) Chemical compound [Y+3].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] JUZFIKNKHJDVBA-UHFFFAOYSA-N 0.000 description 1
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 1
- ANHQLUBMNSSPBV-UHFFFAOYSA-N 4h-pyrido[3,2-b][1,4]oxazin-3-one Chemical group C1=CN=C2NC(=O)COC2=C1 ANHQLUBMNSSPBV-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- OXJUCLBTTSNHOF-UHFFFAOYSA-N 5-ethylcyclopenta-1,3-diene;ruthenium(2+) Chemical compound [Ru+2].CC[C-]1C=CC=C1.CC[C-]1C=CC=C1 OXJUCLBTTSNHOF-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- NBVPNPPIUYKBCY-UHFFFAOYSA-N C(C)(C)C1(C=CC=C1)[Ce](C1(C=CC=C1)C(C)C)C1(C=CC=C1)C(C)C Chemical compound C(C)(C)C1(C=CC=C1)[Ce](C1(C=CC=C1)C(C)C)C1(C=CC=C1)C(C)C NBVPNPPIUYKBCY-UHFFFAOYSA-N 0.000 description 1
- CBVRBZSNMACVLQ-UHFFFAOYSA-N C(C)(C)C1(C=CC=C1)[Dy](C1(C=CC=C1)C(C)C)C1(C=CC=C1)C(C)C Chemical compound C(C)(C)C1(C=CC=C1)[Dy](C1(C=CC=C1)C(C)C)C1(C=CC=C1)C(C)C CBVRBZSNMACVLQ-UHFFFAOYSA-N 0.000 description 1
- CRDYYRDPRXAYHD-UHFFFAOYSA-N C(C)(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)C(C)C Chemical compound C(C)(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)C(C)C CRDYYRDPRXAYHD-UHFFFAOYSA-N 0.000 description 1
- NMGMAOIYXASREJ-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[Mn]C1(C=CC=C1)CC NMGMAOIYXASREJ-UHFFFAOYSA-N 0.000 description 1
- VWHXTCKWIVCDGV-UHFFFAOYSA-N C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC Chemical compound C(C)C1(C=CC=C1)[Ni]C1(C=CC=C1)CC VWHXTCKWIVCDGV-UHFFFAOYSA-N 0.000 description 1
- GNZWQLCWDLIBGG-UHFFFAOYSA-N C(C)C1=C(C(=C(C1(CC)[Mg]C1(C(=C(C(=C1CC)CC)CC)CC)CC)CC)CC)CC Chemical compound C(C)C1=C(C(=C(C1(CC)[Mg]C1(C(=C(C(=C1CC)CC)CC)CC)CC)CC)CC)CC GNZWQLCWDLIBGG-UHFFFAOYSA-N 0.000 description 1
- DBMYNVYTGYFZRQ-UHFFFAOYSA-N C(C)P(CC)CC.[Ag+] Chemical compound C(C)P(CC)CC.[Ag+] DBMYNVYTGYFZRQ-UHFFFAOYSA-N 0.000 description 1
- WJBLZBSMZTYOQH-UHFFFAOYSA-N C(CC)C1(C=CC=C1)[Mo] Chemical compound C(CC)C1(C=CC=C1)[Mo] WJBLZBSMZTYOQH-UHFFFAOYSA-N 0.000 description 1
- FJVPRUNMUOEFSU-UHFFFAOYSA-L C(CCC)C1(C=CC=C1)[W](C1(C=CC=C1)CCCC)(I)I Chemical compound C(CCC)C1(C=CC=C1)[W](C1(C=CC=C1)CCCC)(I)I FJVPRUNMUOEFSU-UHFFFAOYSA-L 0.000 description 1
- CSKSYFFRZCALAP-UHFFFAOYSA-N C1(C=CC=C1)[Mo+] Chemical compound C1(C=CC=C1)[Mo+] CSKSYFFRZCALAP-UHFFFAOYSA-N 0.000 description 1
- AUYRMBCFUJBCIH-UHFFFAOYSA-N C1(C=CC=C1)[W+] Chemical compound C1(C=CC=C1)[W+] AUYRMBCFUJBCIH-UHFFFAOYSA-N 0.000 description 1
- KVKFRWDTQLSAGU-UHFFFAOYSA-N C1=CC(C=C1)[Ce](C1C=CC=C1)C1C=CC=C1 Chemical compound C1=CC(C=C1)[Ce](C1C=CC=C1)C1C=CC=C1 KVKFRWDTQLSAGU-UHFFFAOYSA-N 0.000 description 1
- SOSWMGMRDGAPIG-UHFFFAOYSA-N CC(C)(C)C1=CC=CC1[Hf](C)(C)C1C=CC=C1C(C)(C)C Chemical compound CC(C)(C)C1=CC=CC1[Hf](C)(C)C1C=CC=C1C(C)(C)C SOSWMGMRDGAPIG-UHFFFAOYSA-N 0.000 description 1
- LIEOGMBLMOOSAY-UHFFFAOYSA-N CC1=C(C)C(C)([Mg]C2(C)C(C)=C(C)C(C)=C2C)C(C)=C1C Chemical compound CC1=C(C)C(C)([Mg]C2(C)C(C)=C(C)C(C)=C2C)C(C)=C1C LIEOGMBLMOOSAY-UHFFFAOYSA-N 0.000 description 1
- HJKCHNDMWJQGKU-UHFFFAOYSA-N CC=1C(=C(C(C=1)(C)[Gd](C1(C(=C(C(=C1)C)C)C)C)C1(C(=C(C(=C1)C)C)C)C)C)C Chemical compound CC=1C(=C(C(C=1)(C)[Gd](C1(C(=C(C(=C1)C)C)C)C)C1(C(=C(C(=C1)C)C)C)C)C)C HJKCHNDMWJQGKU-UHFFFAOYSA-N 0.000 description 1
- PVGFZJIEOXUPET-UHFFFAOYSA-N CC=1C(=C(C(C=1)(C)[Sm](C1(C(=C(C(=C1)C)C)C)C)C1(C(=C(C(=C1)C)C)C)C)C)C Chemical compound CC=1C(=C(C(C=1)(C)[Sm](C1(C(=C(C(=C1)C)C)C)C)C1(C(=C(C(=C1)C)C)C)C)C)C PVGFZJIEOXUPET-UHFFFAOYSA-N 0.000 description 1
- UEOVGDMEQRSFHK-UHFFFAOYSA-N C[C]1[CH][CH][CH][CH]1.C1CC=CCCC=C1.[Ir] Chemical compound C[C]1[CH][CH][CH][CH]1.C1CC=CCCC=C1.[Ir] UEOVGDMEQRSFHK-UHFFFAOYSA-N 0.000 description 1
- DODHYCGLWKOXCD-UHFFFAOYSA-N C[Pt](C1(C=CC=C1)C)(C)C Chemical compound C[Pt](C1(C=CC=C1)C)(C)C DODHYCGLWKOXCD-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021554 Chromium(II) chloride Inorganic materials 0.000 description 1
- 229910021556 Chromium(III) chloride Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 1
- 229910001240 Maraging steel Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 206010057362 Underdose Diseases 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- YHQMYQKZMHUWEZ-ODZAUARKSA-M [(z)-1,1,1,5,5,5-hexafluoro-4-oxopent-2-en-2-yl]oxythallium Chemical compound FC(F)(F)C(=O)\C=C(/O[Tl])C(F)(F)F YHQMYQKZMHUWEZ-ODZAUARKSA-M 0.000 description 1
- UZBUPFMEVRRXIY-CFYXSCKTSA-M [(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-yl]oxythallium Chemical compound CC(C)(C)C(=O)\C=C(/O[Tl])C(C)(C)C UZBUPFMEVRRXIY-CFYXSCKTSA-M 0.000 description 1
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 1
- VDOWDFZHCHGOGK-UHFFFAOYSA-N [Ir].C(C)C1(C=CC=C1)C1=CC=CCC1 Chemical compound [Ir].C(C)C1(C=CC=C1)C1=CC=CCC1 VDOWDFZHCHGOGK-UHFFFAOYSA-N 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- QROCSKKOEBOLQO-UHFFFAOYSA-N [Mn](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mn](C1C=CC=C1)C1C=CC=C1 QROCSKKOEBOLQO-UHFFFAOYSA-N 0.000 description 1
- IHRNDXJDUYVDRB-UHFFFAOYSA-N [Ni].Cc1cccc1.Cc1cccc1 Chemical compound [Ni].Cc1cccc1.Cc1cccc1 IHRNDXJDUYVDRB-UHFFFAOYSA-N 0.000 description 1
- GPWHDDKQSYOYBF-UHFFFAOYSA-N ac1l2u0q Chemical compound Br[Br-]Br GPWHDDKQSYOYBF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- VCALGUJWYYNHDY-ZJCTYWPYSA-L barium(2+);(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate;hydrate Chemical compound O.[Ba+2].CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C.CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C VCALGUJWYYNHDY-ZJCTYWPYSA-L 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- FLADHQMJJLOUHM-UHFFFAOYSA-N bis(trimethylsilyl)azanide;europium(3+) Chemical compound [Eu+3].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C FLADHQMJJLOUHM-UHFFFAOYSA-N 0.000 description 1
- LFWPRLGQJJEPDP-UHFFFAOYSA-N bis(trimethylsilyl)azanide;gadolinium(3+) Chemical compound [Gd+3].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C LFWPRLGQJJEPDP-UHFFFAOYSA-N 0.000 description 1
- MUFPZLRACJKLCI-UHFFFAOYSA-N bis(trimethylsilyl)azanide;samarium(3+) Chemical compound [Sm+3].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C MUFPZLRACJKLCI-UHFFFAOYSA-N 0.000 description 1
- GMOTTZNKLCWRHY-UHFFFAOYSA-N bis(trimethylsilyl)azanide;ytterbium(3+) Chemical compound [Yb+3].C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C.C[Si](C)(C)[N-][Si](C)(C)C GMOTTZNKLCWRHY-UHFFFAOYSA-N 0.000 description 1
- BCJZLQBNRGOBSY-PAMPIZDHSA-L bis[[(z)-1,1,1,5,5,5-hexafluoro-4-oxopent-2-en-2-yl]oxy]tin Chemical compound FC(F)(F)C(=O)\C=C(C(F)(F)F)/O[Sn]O\C(C(F)(F)F)=C/C(=O)C(F)(F)F BCJZLQBNRGOBSY-PAMPIZDHSA-L 0.000 description 1
- XDRPDDZWXGILRT-FDGPNNRMSA-L bis[[(z)-4-oxopent-2-en-2-yl]oxy]tin Chemical compound [Sn+2].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O XDRPDDZWXGILRT-FDGPNNRMSA-L 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- LSTSOJNBMMGIEY-UHFFFAOYSA-N butan-1-olate zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-] LSTSOJNBMMGIEY-UHFFFAOYSA-N 0.000 description 1
- JRCMYZNYPKTOPG-UHFFFAOYSA-N butylcyclopentane;erbium Chemical compound [Er].CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1 JRCMYZNYPKTOPG-UHFFFAOYSA-N 0.000 description 1
- VPFJVCJZOKOCHT-UHFFFAOYSA-N butylcyclopentane;yttrium Chemical compound [Y].CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1.CCCC[C]1[CH][CH][CH][CH]1 VPFJVCJZOKOCHT-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- DOOFPPIHJGRIGW-ATMONBRVSA-L calcium;(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate Chemical compound [Ca+2].CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C.CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C DOOFPPIHJGRIGW-ATMONBRVSA-L 0.000 description 1
- APIRBNXPIFVSAN-UHFFFAOYSA-N carbanide;cyclopentane;hafnium Chemical compound [CH3-].[CH3-].[Hf].[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 APIRBNXPIFVSAN-UHFFFAOYSA-N 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- CENDTHIEZAWVHS-UHFFFAOYSA-N carbon monoxide;cyclopenta-1,3-diene;manganese Chemical compound [Mn].[O+]#[C-].[O+]#[C-].[O+]#[C-].C=1C=C[CH-]C=1 CENDTHIEZAWVHS-UHFFFAOYSA-N 0.000 description 1
- VUBLMKVEIPBYME-UHFFFAOYSA-N carbon monoxide;osmium Chemical group [Os].[Os].[Os].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] VUBLMKVEIPBYME-UHFFFAOYSA-N 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- XQTIWNLDFPPCIU-UHFFFAOYSA-N cerium(3+) Chemical compound [Ce+3] XQTIWNLDFPPCIU-UHFFFAOYSA-N 0.000 description 1
- OZHCGGKLKNLLPI-UHFFFAOYSA-N cerium;1,2,3,4-tetramethylcyclopentane Chemical compound [Ce].C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C OZHCGGKLKNLLPI-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- GJCAUTWJWBFMFU-UHFFFAOYSA-N chloro-dimethyl-trimethylsilylsilane Chemical compound C[Si](C)(C)[Si](C)(C)Cl GJCAUTWJWBFMFU-UHFFFAOYSA-N 0.000 description 1
- GWKHNQIALWXRPA-GECNZSFWSA-N chromium (Z)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one (E)-5-hydroxy-2,2,6,6-tetramethylhept-4-en-3-one Chemical compound [Cr].CC(C)(C)C(\O)=C/C(=O)C(C)(C)C.CC(C)(C)C(\O)=C/C(=O)C(C)(C)C.CC(C)(C)C(\O)=C\C(=O)C(C)(C)C GWKHNQIALWXRPA-GECNZSFWSA-N 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- TYYBBNOTQFVVKN-UHFFFAOYSA-N chromium(2+);cyclopenta-1,3-diene Chemical compound [Cr+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 TYYBBNOTQFVVKN-UHFFFAOYSA-N 0.000 description 1
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 1
- 239000011636 chromium(III) chloride Substances 0.000 description 1
- 235000007831 chromium(III) chloride Nutrition 0.000 description 1
- XBWRJSSJWDOUSJ-UHFFFAOYSA-L chromium(ii) chloride Chemical compound Cl[Cr]Cl XBWRJSSJWDOUSJ-UHFFFAOYSA-L 0.000 description 1
- GEYKKJXGTKHSDI-UHFFFAOYSA-N chromium;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Cr].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C GEYKKJXGTKHSDI-UHFFFAOYSA-N 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- PXIUWFOGFCZQSH-UHFFFAOYSA-N cobalt(2+);1,2,3,5,5-pentamethylcyclopenta-1,3-diene Chemical compound [Co+2].CC1=[C-]C(C)(C)C(C)=C1C.CC1=[C-]C(C)(C)C(C)=C1C PXIUWFOGFCZQSH-UHFFFAOYSA-N 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- ZSEHKBVRLFIMPB-UHFFFAOYSA-N cobalt;cyclopenta-1,3-diene Chemical compound [Co].C=1C=C[CH-]C=1 ZSEHKBVRLFIMPB-UHFFFAOYSA-N 0.000 description 1
- YHCQFTZSIGZRTR-UHFFFAOYSA-N cobalt;ethylcyclopentane Chemical compound [Co].CC[C]1[CH][CH][CH][CH]1.CC[C]1[CH][CH][CH][CH]1 YHCQFTZSIGZRTR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- YAYGFOZNMGYPRE-UHFFFAOYSA-N cyclopenta-1,3-diene;gadolinium(3+) Chemical compound [Gd+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 YAYGFOZNMGYPRE-UHFFFAOYSA-N 0.000 description 1
- DYPIGRVRIMDVFA-UHFFFAOYSA-N cyclopenta-1,3-diene;lanthanum(3+) Chemical compound [La+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 DYPIGRVRIMDVFA-UHFFFAOYSA-N 0.000 description 1
- KZPXREABEBSAQM-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KZPXREABEBSAQM-UHFFFAOYSA-N 0.000 description 1
- MWWSVGXLSBSLQO-UHFFFAOYSA-N cyclopenta-1,3-diene;thulium(3+) Chemical compound [Tm+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 MWWSVGXLSBSLQO-UHFFFAOYSA-N 0.000 description 1
- JCWMQECJDTYOET-UHFFFAOYSA-N cyclopenta-1,3-diene;ytterbium(3+) Chemical compound [Yb+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 JCWMQECJDTYOET-UHFFFAOYSA-N 0.000 description 1
- OLQIFTSPAVIXCQ-UHFFFAOYSA-N cyclopenta-1,3-diene;yttrium(3+) Chemical compound [Y+3].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 OLQIFTSPAVIXCQ-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- CVEQRUADOXXBRI-UHFFFAOYSA-N cyclopentadienylthallium Chemical compound [Tl+].C=1C=C[CH-]C=1 CVEQRUADOXXBRI-UHFFFAOYSA-N 0.000 description 1
- YQZUTDPJTAZPQJ-UHFFFAOYSA-L cyclopentane;dichloromolybdenum Chemical compound Cl[Mo]Cl.[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 YQZUTDPJTAZPQJ-UHFFFAOYSA-L 0.000 description 1
- CYMWZQTUXXEBCR-UHFFFAOYSA-L cyclopentane;dichloroniobium Chemical compound Cl[Nb]Cl.[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 CYMWZQTUXXEBCR-UHFFFAOYSA-L 0.000 description 1
- GXMZHFAZTNJTEW-UHFFFAOYSA-L cyclopentane;dichlorotungsten Chemical compound Cl[W]Cl.[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 GXMZHFAZTNJTEW-UHFFFAOYSA-L 0.000 description 1
- FCGFDFIKNFHEHZ-UHFFFAOYSA-N cyclopentane;tungsten dihydride Chemical compound [WH2].[CH]1[CH][CH][CH][CH]1.[CH]1[CH][CH][CH][CH]1 FCGFDFIKNFHEHZ-UHFFFAOYSA-N 0.000 description 1
- UXYBKDNBDQNDNV-UHFFFAOYSA-L diacetyloxy(triphenyl)bismuth Chemical compound C=1C=CC=CC=1[Bi](OC(C)=O)(C=1C=CC=CC=1)(OC(=O)C)C1=CC=CC=C1 UXYBKDNBDQNDNV-UHFFFAOYSA-L 0.000 description 1
- 125000004989 dicarbonyl group Chemical group 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- GCIHPQVQNZQGFC-UHFFFAOYSA-N diethylazanide;dimethylazanide;titanium(4+) Chemical compound [Ti+4].C[N-]C.C[N-]C.CC[N-]CC.CC[N-]CC GCIHPQVQNZQGFC-UHFFFAOYSA-N 0.000 description 1
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 description 1
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 1
- GOVWJRDDHRBJRW-UHFFFAOYSA-N diethylazanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC GOVWJRDDHRBJRW-UHFFFAOYSA-N 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- QFEOTYVTTQCYAZ-UHFFFAOYSA-N dimanganese decacarbonyl Chemical group [Mn].[Mn].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] QFEOTYVTTQCYAZ-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- HJYACKPVJCHPFH-UHFFFAOYSA-N dimethyl(propan-2-yloxy)alumane Chemical compound C[Al+]C.CC(C)[O-] HJYACKPVJCHPFH-UHFFFAOYSA-N 0.000 description 1
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 1
- FHQRQPAFALORSL-UHFFFAOYSA-N dimethylsilyl(trimethyl)silane Chemical compound C[SiH](C)[Si](C)(C)C FHQRQPAFALORSL-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- MKRVHLWAVKJBFN-UHFFFAOYSA-N diphenylzinc Chemical compound C=1C=CC=CC=1[Zn]C1=CC=CC=C1 MKRVHLWAVKJBFN-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- JZFGFESISFGKQO-LWTKGLMZSA-K dysprosium(3+);(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate Chemical compound [Dy+3].CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C.CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C.CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C JZFGFESISFGKQO-LWTKGLMZSA-K 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- JHFPQYFEJICGKC-UHFFFAOYSA-N erbium(3+) Chemical compound [Er+3] JHFPQYFEJICGKC-UHFFFAOYSA-N 0.000 description 1
- HBWGDHDXAMFADB-UHFFFAOYSA-N ethenyl(triethyl)silane Chemical compound CC[Si](CC)(CC)C=C HBWGDHDXAMFADB-UHFFFAOYSA-N 0.000 description 1
- GCPCLEKQVMKXJM-UHFFFAOYSA-N ethoxy(diethyl)alumane Chemical compound CCO[Al](CC)CC GCPCLEKQVMKXJM-UHFFFAOYSA-N 0.000 description 1
- DZFYOYRNBGNPJW-UHFFFAOYSA-N ethoxythallium Chemical compound [Tl+].CC[O-] DZFYOYRNBGNPJW-UHFFFAOYSA-N 0.000 description 1
- QPADTPIHSPAZLQ-UHFFFAOYSA-N ethyl 5-nitronaphthalene-1-carboxylate Chemical compound C1=CC=C2C(C(=O)OCC)=CC=CC2=C1[N+]([O-])=O QPADTPIHSPAZLQ-UHFFFAOYSA-N 0.000 description 1
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 1
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 1
- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 description 1
- GKKLDIHVIQZCPZ-UHFFFAOYSA-N ethylcyclopentane;iron Chemical compound [Fe].CC[C]1[CH][CH][CH][CH]1.CC[C]1[CH][CH][CH][CH]1 GKKLDIHVIQZCPZ-UHFFFAOYSA-N 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- SEHXYMOUURJNBC-UHFFFAOYSA-N europium;1,2,3,4-tetramethylcyclopentane Chemical compound [Eu].C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C SEHXYMOUURJNBC-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- WZVIPWQGBBCHJP-UHFFFAOYSA-N hafnium(4+);2-methylpropan-2-olate Chemical compound [Hf+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] WZVIPWQGBBCHJP-UHFFFAOYSA-N 0.000 description 1
- HMKGKDSPHSNMTM-UHFFFAOYSA-N hafnium;propan-2-ol Chemical compound [Hf].CC(C)O.CC(C)O.CC(C)O.CC(C)O HMKGKDSPHSNMTM-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000007970 homogeneous dispersion Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- RLYZRADFTORPLZ-UHFFFAOYSA-N hydroxy-tri(propan-2-yloxy)silane Chemical compound CC(C)O[Si](O)(OC(C)C)OC(C)C RLYZRADFTORPLZ-UHFFFAOYSA-N 0.000 description 1
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 description 1
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- FOVZCYAIUZHXGB-UHFFFAOYSA-M indium(1+);iodide Chemical compound I[In] FOVZCYAIUZHXGB-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- OZHNSXNGSKKWMC-UHFFFAOYSA-N iron;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Fe].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C OZHNSXNGSKKWMC-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- SORGMJIXNUWMMR-UHFFFAOYSA-N lanthanum(3+);propan-2-olate Chemical compound [La+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SORGMJIXNUWMMR-UHFFFAOYSA-N 0.000 description 1
- MEFBYUADNJXASA-UHFFFAOYSA-N lanthanum;1,2,3,4-tetramethylcyclopentane Chemical compound [La].C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C.C[C]1[CH][C](C)[C](C)[C]1C MEFBYUADNJXASA-UHFFFAOYSA-N 0.000 description 1
- LZWQNOHZMQIFBX-UHFFFAOYSA-N lithium;2-methylpropan-2-olate Chemical compound [Li+].CC(C)(C)[O-] LZWQNOHZMQIFBX-UHFFFAOYSA-N 0.000 description 1
- HMRCZKQIOFZACX-UHFFFAOYSA-N lithium;trimethylsilylazanide Chemical compound [Li+].C[Si](C)(C)[NH-] HMRCZKQIOFZACX-UHFFFAOYSA-N 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- ALEXWXWETMUIKL-UHFFFAOYSA-N manganese;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Mn].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C ALEXWXWETMUIKL-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005551 mechanical alloying Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- YQXQWFASZYSARF-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC YQXQWFASZYSARF-UHFFFAOYSA-N 0.000 description 1
- ZTEHTGMWGUKFNE-UHFFFAOYSA-N methyl 3-[[2-(diaminomethylideneamino)-1,3-thiazol-4-yl]methylsulfanyl]propanimidate Chemical compound COC(=N)CCSCC1=CSC(N=C(N)N)=N1 ZTEHTGMWGUKFNE-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- RLCOZMCCEKDUPY-UHFFFAOYSA-H molybdenum hexafluoride Chemical compound F[Mo](F)(F)(F)(F)F RLCOZMCCEKDUPY-UHFFFAOYSA-H 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- HNIMBAXJIKTYOV-UHFFFAOYSA-N n,n-di(propan-2-yl)pentan-1-amine Chemical compound CCCCCN(C(C)C)C(C)C HNIMBAXJIKTYOV-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- ZUSRFDBQZSPBDV-UHFFFAOYSA-N n-[bis(dimethylamino)stibanyl]-n-methylmethanamine Chemical compound CN(C)[Sb](N(C)C)N(C)C ZUSRFDBQZSPBDV-UHFFFAOYSA-N 0.000 description 1
- UGJHADISJBNSFP-UHFFFAOYSA-N n-bis(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH](NC(C)(C)C)NC(C)(C)C UGJHADISJBNSFP-UHFFFAOYSA-N 0.000 description 1
- WHXTVQNIFGXMSB-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)stannyl]methanamine Chemical compound CN(C)[Sn](N(C)C)(N(C)C)N(C)C WHXTVQNIFGXMSB-UHFFFAOYSA-N 0.000 description 1
- IBUPNBOPJGCOSP-UHFFFAOYSA-N n-trimethylsilylbutan-2-amine Chemical compound CCC(C)N[Si](C)(C)C IBUPNBOPJGCOSP-UHFFFAOYSA-N 0.000 description 1
- 239000002103 nanocoating Substances 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- ZBRJXVVKPBZPAN-UHFFFAOYSA-L nickel(2+);triphenylphosphane;dichloride Chemical compound [Cl-].[Cl-].[Ni+2].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 ZBRJXVVKPBZPAN-UHFFFAOYSA-L 0.000 description 1
- LZRGWUCHXWALGY-UHFFFAOYSA-N niobium(5+);propan-2-olate Chemical compound [Nb+5].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] LZRGWUCHXWALGY-UHFFFAOYSA-N 0.000 description 1
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000004482 other powder Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- JOUSPCDMLWUHSO-UHFFFAOYSA-N oxovanadium;propan-2-ol Chemical compound [V]=O.CC(C)O.CC(C)O.CC(C)O JOUSPCDMLWUHSO-UHFFFAOYSA-N 0.000 description 1
- DPIINRHUOKTEKT-UHFFFAOYSA-L oxygen(2-);titanium(4+);dichloride Chemical compound [O-2].[Cl-].[Cl-].[Ti+4] DPIINRHUOKTEKT-UHFFFAOYSA-L 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- WCWKKSOQLQEJTE-UHFFFAOYSA-N praseodymium(3+) Chemical compound [Pr+3] WCWKKSOQLQEJTE-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- PYLIDHFYDYRZSC-UHFFFAOYSA-N propan-2-olate;yttrium(3+) Chemical compound [Y+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] PYLIDHFYDYRZSC-UHFFFAOYSA-N 0.000 description 1
- VRMGPHYEHNLCQW-UHFFFAOYSA-N propan-2-ylcyclopentane;tungsten Chemical compound [W].CC(C)[C]1[CH][CH][CH][CH]1.CC(C)[C]1[CH][CH][CH][CH]1 VRMGPHYEHNLCQW-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910000753 refractory alloy Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- FZHCFNGSGGGXEH-UHFFFAOYSA-N ruthenocene Chemical compound [Ru+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 FZHCFNGSGGGXEH-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- WQTMVGGQTAPQJQ-ATMONBRVSA-L strontium;(z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate Chemical compound [Sr+2].CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C.CC(C)(C)C(\[O-])=C\C(=O)C(C)(C)C WQTMVGGQTAPQJQ-ATMONBRVSA-L 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- MNDUSBDNOLAQKR-UHFFFAOYSA-N terbium(3+);1,2,3,4-tetramethylcyclopenta-1,3-diene Chemical compound [Tb+3].CC1=C[C-](C)C(C)=C1C.CC1=C[C-](C)C(C)=C1C.CC1=C[C-](C)C(C)=C1C MNDUSBDNOLAQKR-UHFFFAOYSA-N 0.000 description 1
- WUOSVSDQERJZBI-UHFFFAOYSA-N tert-butyliminotantalum;ethyl(methyl)azanide Chemical compound CC[N-]C.CC[N-]C.CC[N-]C.CC(C)(C)N=[Ta] WUOSVSDQERJZBI-UHFFFAOYSA-N 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- XOOGZRUBTYCLHG-UHFFFAOYSA-N tetramethyllead Chemical compound C[Pb](C)(C)C XOOGZRUBTYCLHG-UHFFFAOYSA-N 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- WBJSMHDYLOJVKC-UHFFFAOYSA-N tetraphenyllead Chemical compound C1=CC=CC=C1[Pb](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 WBJSMHDYLOJVKC-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- YGLIFDACLKVYLS-UHFFFAOYSA-N tri(cyclopenta-2,4-dien-1-yl)indigane Chemical compound C1(C=CC=C1)[In](C1C=CC=C1)C1C=CC=C1 YGLIFDACLKVYLS-UHFFFAOYSA-N 0.000 description 1
- KTSWILXIWHVQLR-UHFFFAOYSA-N tributylgermane Chemical compound CCCC[GeH](CCCC)CCCC KTSWILXIWHVQLR-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- IFUCAAMZMJICIP-UHFFFAOYSA-N triethylgermanium Chemical compound CC[Ge](CC)CC.CC[Ge](CC)CC IFUCAAMZMJICIP-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical compound CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- SEDZOYHHAIAQIW-UHFFFAOYSA-N trimethylsilyl azide Chemical compound C[Si](C)(C)N=[N+]=[N-] SEDZOYHHAIAQIW-UHFFFAOYSA-N 0.000 description 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical compound C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 description 1
- BPLUKJNHPBNVQL-UHFFFAOYSA-N triphenylarsine Chemical compound C1=CC=CC=C1[As](C=1C=CC=CC=1)C1=CC=CC=C1 BPLUKJNHPBNVQL-UHFFFAOYSA-N 0.000 description 1
- ZHXAZZQXWJJBHA-UHFFFAOYSA-N triphenylbismuthane Chemical compound C1=CC=CC=C1[Bi](C=1C=CC=CC=1)C1=CC=CC=C1 ZHXAZZQXWJJBHA-UHFFFAOYSA-N 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- SLAJUCLVZORTHN-UHFFFAOYSA-N triphenylgermanium Chemical compound C1=CC=CC=C1[Ge](C=1C=CC=CC=1)C1=CC=CC=C1 SLAJUCLVZORTHN-UHFFFAOYSA-N 0.000 description 1
- HVYVMSPIJIWUNA-UHFFFAOYSA-N triphenylstibine Chemical compound C1=CC=CC=C1[Sb](C=1C=CC=CC=1)C1=CC=CC=C1 HVYVMSPIJIWUNA-UHFFFAOYSA-N 0.000 description 1
- NHDIQVFFNDKAQU-UHFFFAOYSA-N tripropan-2-yl borate Chemical compound CC(C)OB(OC(C)C)OC(C)C NHDIQVFFNDKAQU-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- VFWRGMGLLNCHIA-UHFFFAOYSA-N tris(2-methoxyphenyl)bismuthane Chemical compound COC1=CC=CC=C1[Bi](C=1C(=CC=CC=1)OC)C1=CC=CC=C1OC VFWRGMGLLNCHIA-UHFFFAOYSA-N 0.000 description 1
- OBAJXDYVZBHCGT-UHFFFAOYSA-N tris(pentafluorophenyl)borane Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1B(C=1C(=C(F)C(F)=C(F)C=1F)F)C1=C(F)C(F)=C(F)C(F)=C1F OBAJXDYVZBHCGT-UHFFFAOYSA-N 0.000 description 1
- OUMZKMRZMVDEOF-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C OUMZKMRZMVDEOF-UHFFFAOYSA-N 0.000 description 1
- RSCASNFKRQQQDK-UHFFFAOYSA-N tritert-butylgallane Chemical compound CC(C)(C)[Ga](C(C)(C)C)C(C)(C)C RSCASNFKRQQQDK-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- YFGRPIXHCIXTLM-UHFFFAOYSA-N tungsten(4+) Chemical compound [W+4] YFGRPIXHCIXTLM-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- GRTBAGCGDOYUBE-UHFFFAOYSA-N yttrium(3+) Chemical compound [Y+3] GRTBAGCGDOYUBE-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
- GBNDTYKAOXLLID-UHFFFAOYSA-N zirconium(4+) ion Chemical compound [Zr+4] GBNDTYKAOXLLID-UHFFFAOYSA-N 0.000 description 1
- LSWWNKUULMMMIL-UHFFFAOYSA-J zirconium(iv) bromide Chemical compound Br[Zr](Br)(Br)Br LSWWNKUULMMMIL-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
- B22F3/225—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip by injection molding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/18—Non-metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/25—Direct deposition of metal particles, e.g. direct metal deposition [DMD] or laser engineered net shaping [LENS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2303/00—Functional details of metal or compound in the powder or product
- B22F2303/30—Coating alloy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/054—Particle size between 1 and 100 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/056—Particle size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
- B22F2304/058—Particle size above 300 nm up to 1 micrometer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
Description
に従って金属の強度を高める。粒界は転位運動に対する障壁であり、最も高い降伏強さを有するミクロ構造が約10nmの粒サイズであることが実験的に観察された。AM原料粉末は、緻密な部品を形成するために十分な流動性を達成することを期待してナノ粉末として製造し使用することができない。この理想的な粒サイズを有する工学材料を製造するただ一つの方法は、ALDのような薄膜技術の使用による。したがって、この手法の実施形態は、隣接する粒子の間に10nmの粒を形成するために原料粉末の上に厚さ5nm以下内の均一で均質な層を適用することを可能にする。いくつかの実施形態では、第一の相の材料のワークピース粒は、0.5nm~20nm、1nm~15nm、2nm~5nm、または第二の相の材料の特徴的な長さスケールに比例する他の最小および最大の範囲の均一な距離だけ離れている。
トキシド、スズ(II)ヘキサフルオロアセチルアセトナート、ビス(N,N′-ジイソプロピルアセトアミジナト)スズ(II)、N,N-ジ-tert-ブチル-2,3-ジアミドブタンスズ(II)、テトラキス(ジメチルアミノ)スズ(IV)、ビス(ジエチルアミド)ビス(ジメチルアミド)チタン(IV)、テトラキス(ジエチルアミド)チタン(IV)、テトラキス(ジメチルアミド)チタン(IV)、テトラキス(エチルメチルアミド)チタン(IV)、臭化チタン(IV)、塩化チタン(IV)、フッ化チタン(IV)、チタン(IV)tert-ブトキシド、チタン(IV)イソプロポキシド、チタン(IV)エトキシド、チタン(IV)メトキシド、チタン(IV)イソプロポキシドビス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナート)、酸化ジクロロチタン(IV)、ビス(tert-ブチルイミド)ビス(ジメチルアミド)タングステン(VI)、タングステンヘキサカルボニル、塩化タングステン(VI)、フッ化タングステン(VI)、トリアミンタングステン(IV)トリカルボニル、シクロペンタジエニルタングステン(II)トリカルボニルヒドリド、ビス(イソプロピルシクロペンタジエニル)タングステン(IV)ジヒドリド、ビス(シクロペンタジエニル)タングステン(IV)ジヒドリド、ビス(シクロペンタジエニル)タングステン(IV)ジクロリド、二ヨウ化ビス(ブチルシクロペンタジエニル)タングステン(IV)、ビス(シクロペンタジエニル)バナジウム(II)、三塩化酸化バナジウム(V)、バナジウム(V)オキシトリイソプロポキシド、トリス(N,N-ビス(トリメチルシリル)アミド)イッテルビウム(III)、トリス(シクロペンタジエニル)イッテルビウム(III)、トリス(N,N-ビス(トリメチルシリル)アミド)イットリウム(III)、イットリウム(III)トリス(tert-ブトキシド)、イットリウム(III)トリイソプロポキシド、イットリウム(III)トリス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナート)、トリス(ブチルシクロペンタジエニル)イットリウム(III)、トリス(シクロペンタジエニル)イットリウム(III)、イットリウム2-メトキシエトキシド、ジエチル亜鉛、ジメチル亜鉛、ジフェニル亜鉛、ビス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナート)亜鉛(II)、ビス(ペンタフルオロフェニル)亜鉛、ジルコニウム(IV)ジブトキシド(ビス-2,4-ペンタンジオナート)、2-エチルヘキサン酸ジルコニウム(IV)、ジルコニウムテトラキス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナート)、ビス(シクロペンタジエニル)ジルコニウム(IV)ジヒドリド、ビス(メチル-n-シクロペンタジエニル)メトキシメチルジルコニウム、テトラキス(ジエチルアミド)ジルコニウム(IV)、ジメチルビス(ペンタメチルシクロペンタジエニル)ジルコニウム(IV)、テトラキス(ジメチルアミド)ジルコニウム(IV)、テトラキス(エチルメチルアミド)ジルコニウム(IV)、臭化ジルコニウム(IV)、塩化ジルコニウム(IV)、ジルコニウム(IV)tert-ブトキシド、およびそれらの任意の2つまたはそれ以上の混合物からなる群から選ばれる化合物を挙げることができる。粉末および粒子の合成用の前駆体ならびに時々それらのカプセル化用の前駆体としては、しばしば金属塩および金属水酸化物が挙げられ、そして乾燥した粉末、液体または気体の原料として、または適切な溶媒に溶解して、注射器具、ノズル、噴霧装置、蒸発器、超音波処理器または当業者に知られた他のサブ部品によって投与される。金属塩は、Ac、Ag、Al、Am、As、At、Au、B、Ba、Be、Bh、Bi、Bk、Br、C、Ca、Cd、Ce、Cf、Cm、Cn、Co、Cr、Cs、Cu、Db、Ds、Dy、Er、Es、Eu、Fe、Fl、Fm、Fr、Ga、Gd、Ge、H、Hf、Hg、Ho、Hs、In、K、La、Li、Lr、Lu、Lv、Me、Md、Mg、Mn、Mo、Mt、N、Na、Nb、Nd、Nh、Ni、No、Np、O、Og、Os、P、Pa、Pb、Pd、Pm、Po、Pr、Pt、Pu、Ra、Rb、Re、Rf、Rg、Rh、Ru、S、Sb、Sc、Se、Sg、Si、Sm、Sn、Sr、Ta、Tb、Tc、Te、Th、Ti、Tl、Tm、Ts、EG、V、W、Y、Yb、Zn、Zr、またはそれらの組み合わせのハロゲン化物、硫酸塩、硝酸塩、シュウ酸塩、リン酸塩またはその他の無機もしくは有機の化合物の形態をしていてもよい。
本発明は、以下の実施態様を含む。
[1]金属、金属合金、セラミック、ガラスおよびポリマーの少なくとも1種を含む第一の相と、金属、金属合金、セラミック、ガラスおよびポリマーの少なくとも1種を含む第二の相とを含むワークピースであって、
第一の相は、積層造形、3Dプリント、バインダージェットプリント、レーザー溶融、プラズマ焼結、および射出成形、押出ベース、コールドスプレーまたはサブトラクティブ製造プロセスにおいて使用するために構成された粉末状材料に由来し、
第二の相はワークピースの製作前に第一の相の表面に化学的または物理的に付着している、ワークピース。
[2]第一の相が約500μm以下の特徴的な粒サイズを有する、[1]に記載のワークピース。
[3]第一の相が10nm~100μmの特徴的な粒サイズを有する、[1]に記載のワークピース。
[4]第一の相が100nm~10μmの特徴的な粒サイズを有する、[1]に記載のワークピース。
[5]第一の相は約1μm以下の特徴的な粒サイズを有する、[1]に記載のワークピース。
[6]第一の相または第二の相がワークピース全体に均一に分布している、[1]に記載のワークピース。
[7]ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の1つまたはそれ以上の物理的または機械的特性が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、[1]に記載のワークピース。
[8]ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の1つまたはそれ以上の化学的または電気的特性が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、[1]に記載のワークピース。
[9]ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の化学組成が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、[1]に記載のワークピース。
[10]第二の相の材料がワークピースの製作前に第一の相の粉末の外部表面積の少なくとも70%を覆うコーティングの形態をしている、[1]に記載のワークピース。
[11]コーティングが、ゾルゲル、マイクロエマルジョン、物理蒸気、化学蒸気、原子層、熱分解、化学分解または超臨界流体堆積プロセスの1つまたはそれ以上を使用して適用される、[10]に記載のワークピース。
[12]第二の相の材料が、i)第一の相の材料の粒に隣接したままである、ii)第一の相の材料の粒とともに散在したままである、またはiii)第一の相の材料の粒との界面を維持している、[2]に記載のワークピース。
[13]第一の相の材料の粒が、0.1nm~100nmの範囲の均一な距離だけ離れている、[12]に記載のワークピース。
[14]ワークピースが、積層造形、3Dプリント、バインダージェットプリント、レーザー溶融、プラズマ焼結、および射出成形、押出ベース、コールドスプレー、またはサブトラクティブ製造プロセスの1つまたはそれ以上を使用して製造される、[1]に記載のワークピース。
[15]第一の相が、チタン、アルミニウム、ホウ素、塩素、鉄、クロム、コバルト、マグネシウム、モリブデン、タングステン、ニッケル、スズ、タンタル、バナジウム、イットリウム、炭素、亜鉛、ケイ素またはジルコニウムを含む、[1]に記載のワークピース。
[16]第二の相が、酸化物、窒化物、炭化物、ホウ化物、ハロゲン化物またはアルミニウム化物を含む、[1]に記載のワークピース。
[17]第二の相が、1つまたはそれ以上の追加のサブ相を含む、[1]に記載のワークピース。
[18]ワークピース中の第二の相の組成が、ワークピースの製作前の出発原料粉末の第二の相の組成と異なる、[1]に記載のワークピース。
[19]第二の相の組成物がワークピースの製作中に形成される、[18]に記載のワークピース。
[20]i.核用途に、
ii.アノード、アノード液、カソード、カソード液、電解質、集電装置、スタック部材、電極アセンブリー、セパレーター、膜に、または電気化学電池のパック部材として、
iii.液体電解質を含む電池、固体電解質を含む電池、コンデンサー、電解槽、液体電解質を含む燃料電池または固体電解質を含む燃料電池に、
iv.構造または補強部材として、
v.固定またはモバイル装置の外装またはシールド部材として、
vi.移動または携帯用途のための軽量化手段として
使用するために構成された[1]に記載のワークピース。
Claims (20)
- 金属、金属合金、セラミック、ガラスおよびポリマーの少なくとも1種を含む第一の相と、金属、金属合金、セラミック、ガラスおよびポリマーの少なくとも1種を含む第二の相とを含むワークピースであって、
第一の相は、積層造形、3Dプリント、バインダージェットプリント、レーザー溶融、プラズマ焼結、射出成形、押出ベース、コールドスプレーまたはサブトラクティブ製造プロセスにおいて使用するために構成された粉末状原料に由来し、
第二の相はワークピースの製作前に第一の相の表面に化学的または物理的に付着している、ワークピース。 - 第一の相が約500μm以下の特徴的な粒サイズを有する、請求項1に記載のワークピース。
- 第一の相が10nm~100μmの特徴的な粒サイズを有する、請求項1に記載のワークピース。
- 第一の相が100nm~10μmの特徴的な粒サイズを有する、請求項1に記載のワークピース。
- 第一の相は約1μm以下の特徴的な粒サイズを有する、請求項1に記載のワークピース。
- 第一の相または第二の相がワークピース全体に均一に分布している、請求項1に記載のワークピース。
- ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の1つまたはそれ以上の物理的または機械的特性が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、請求項1に記載のワークピース。
- ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の1つまたはそれ以上の化学的または電気的特性が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、請求項1に記載のワークピース。
- ワークピースが複数の体積要素を含み、ワークピースの任意の2つの同一サイズの別個の体積要素の化学組成が10%以下の偏差を有し、各々の体積要素の立方根がワークピースの第一の相のメジアン粒サイズの3倍以下である、請求項1に記載のワークピース。
- 第二の相の材料がワークピースの製作前に第一の相の粉末の外部表面積の少なくとも70%を覆うコーティングの形態をしている、請求項1に記載のワークピース。
- コーティングが、ゾルゲル、マイクロエマルジョン、物理蒸気、化学蒸気、原子層、熱分解、化学分解または超臨界流体堆積プロセスの1つまたはそれ以上を使用して適用される、請求項10に記載のワークピース。
- 第二の相の材料が、i)第一の相の材料の粒に隣接したままである、ii)第一の相の材料の粒とともに散在したままである、またはiii)第一の相の材料の粒との界面を維持している、請求項2に記載のワークピース。
- 第一の相の材料の粒が、0.1nm~100nmの範囲の均一な距離だけ離れている、請求項12に記載のワークピース。
- ワークピースが、積層造形、3Dプリント、バインダージェットプリント、レーザー溶融、プラズマ焼結、および射出成形、押出ベース、コールドスプレー、またはサブトラクティブ製造プロセスの1つまたはそれ以上を使用して製造される、請求項1に記載のワークピース。
- 第一の相が、チタン、アルミニウム、ホウ素、塩素、鉄、クロム、コバルト、マグネシウム、モリブデン、タングステン、ニッケル、スズ、タンタル、バナジウム、イットリウム、炭素、亜鉛、ケイ素またはジルコニウムを含む、請求項1に記載のワークピース。
- 第二の相が、酸化物、窒化物、炭化物、ホウ化物、ハロゲン化物またはアルミニウム化物を含む、請求項1に記載のワークピース。
- 第二の相が、1つまたはそれ以上の追加のサブ相を含む、請求項1に記載のワークピース。
- ワークピース中の第二の相の組成が、ワークピースの製作前の出発原料粉末の第二の相の組成と異なる、請求項1に記載のワークピース。
- 第二の相の組成物がワークピースの製作中に形成される、請求項18に記載のワークピース。
- i.核用途に、
ii.アノード、アノード液、カソード、カソード液、電解質、集電装置、スタック部材、電極アセンブリー、セパレーター、膜に、または電気化学電池のパック部材として、
iii.液体電解質を含む電池、固体電解質を含む電池、コンデンサー、電解槽、液体電解質を含む燃料電池または固体電解質を含む燃料電池に、
iv.構造または補強部材として、
v.固定またはモバイル装置の外装またはシールド部材として、
vi.移動または携帯用途のための軽量化手段として
使用するために構成された請求項1に記載のワークピース。
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Country Status (4)
Country | Link |
---|---|
US (2) | US20200276638A1 (ja) |
EP (1) | EP3713695A1 (ja) |
JP (2) | JP2021504568A (ja) |
WO (1) | WO2019104186A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4324577A1 (en) | 2015-12-16 | 2024-02-21 | 6K Inc. | Method of producing spheroidal dehydrogenated titanium alloy particles |
US20210387259A1 (en) * | 2018-07-09 | 2021-12-16 | Ald Nanosolutions, Inc. | Modification Of Particles For Additive Manufacturing |
US11611130B2 (en) | 2019-04-30 | 2023-03-21 | 6K Inc. | Lithium lanthanum zirconium oxide (LLZO) powder |
SG11202111576QA (en) | 2019-04-30 | 2021-11-29 | 6K Inc | Mechanically alloyed powder feedstock |
US11724340B2 (en) * | 2019-05-23 | 2023-08-15 | Saudi Arabian Oil Company | Additive manufacturing of MLD-enhanced drilling tools |
US20220250314A1 (en) * | 2019-09-18 | 2022-08-11 | Hewlett-Packard Development Company, L.P. | Three-dimensional printing |
CN110592428B (zh) * | 2019-10-15 | 2021-10-08 | 江苏思睿迪快速制造科技有限公司 | 一种3d打印钛合金球形粉末的制备方法 |
JP2023512391A (ja) | 2019-11-18 | 2023-03-27 | シックスケー インコーポレイテッド | 球形粉体用の特異な供給原料及び製造方法 |
US11590568B2 (en) | 2019-12-19 | 2023-02-28 | 6K Inc. | Process for producing spheroidized powder from feedstock materials |
CN111504980B (zh) * | 2020-04-26 | 2021-04-16 | 长春工业大学 | 一种金属增材制造过程的libs在线监测装置及方法 |
CN111793795A (zh) * | 2020-06-24 | 2020-10-20 | 浙江工业大学 | 一种基于加工硬化塑性沉积的钴基抗汽蚀涂层的制备方法 |
EP4173060A1 (en) | 2020-06-25 | 2023-05-03 | 6K Inc. | Microcomposite alloy structure |
AU2021349358A1 (en) | 2020-09-24 | 2023-02-09 | 6K Inc. | Systems, devices, and methods for starting plasma |
US11919071B2 (en) | 2020-10-30 | 2024-03-05 | 6K Inc. | Systems and methods for synthesis of spheroidized metal powders |
US20220195561A1 (en) * | 2020-12-21 | 2022-06-23 | Divergent Technologies, Inc. | 3-d printable alloys |
CN117120182A (zh) * | 2021-03-31 | 2023-11-24 | 6K有限公司 | 用于金属氮化物陶瓷的增材制造的系统和方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CA2570671C (en) * | 2004-06-10 | 2013-01-08 | Allomet Corporation | Method for consolidating tough coated hard powders |
BR112012002512A2 (pt) * | 2009-08-04 | 2016-11-08 | Allomet Corp | material consolidado e material sinterizado, método para fornecer artigo consolidado e matriz |
US9284643B2 (en) | 2010-03-23 | 2016-03-15 | Pneumaticoat Technologies Llc | Semi-continuous vapor deposition process for the manufacture of coated particles |
US10913129B2 (en) * | 2014-01-24 | 2021-02-09 | Raytheon Technologies Corporation | Additive manufacturing an object from material with a selective diffusion barrier |
WO2016191162A1 (en) * | 2015-05-28 | 2016-12-01 | 3M Innovative Properties Company | Additive manufacturing process for producing ceramic articles using a sol containing nano-sized particles |
US10682699B2 (en) * | 2015-07-15 | 2020-06-16 | Hrl Laboratories, Llc | Semi-passive control of solidification in powdered materials |
US10335855B2 (en) * | 2015-09-14 | 2019-07-02 | Baker Hughes, A Ge Company, Llc | Additive manufacturing of functionally gradient degradable tools |
US20170175234A1 (en) * | 2015-12-18 | 2017-06-22 | Raytheon Company | Metal coated heavy metal powder for additive manufacturing of heavy metal parts |
US11286543B2 (en) * | 2017-02-01 | 2022-03-29 | Hrl Laboratories, Llc | Aluminum alloy components from additive manufacturing |
-
2018
- 2018-11-21 WO PCT/US2018/062271 patent/WO2019104186A1/en unknown
- 2018-11-21 JP JP2020528133A patent/JP2021504568A/ja not_active Withdrawn
- 2018-11-21 EP EP18815912.3A patent/EP3713695A1/en active Pending
-
2020
- 2020-05-21 US US16/880,246 patent/US20200276638A1/en not_active Abandoned
-
2022
- 2022-09-26 JP JP2022152279A patent/JP2023002536A/ja active Pending
-
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- 2023-08-02 US US18/363,834 patent/US20230373000A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20200276638A1 (en) | 2020-09-03 |
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