JP2022520715A - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP2022520715A JP2022520715A JP2021541088A JP2021541088A JP2022520715A JP 2022520715 A JP2022520715 A JP 2022520715A JP 2021541088 A JP2021541088 A JP 2021541088A JP 2021541088 A JP2021541088 A JP 2021541088A JP 2022520715 A JP2022520715 A JP 2022520715A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000012811 non-conductive material Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 15
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000002161 passivation Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 208000010392 Bone Fractures Diseases 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 206010017076 Fracture Diseases 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1133—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a conductor-insulator-semiconductor diode or a CCD device
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (26)
- 光検出器であって、
照射を受けるための入力面を有する半導体基板と、
前記基板内の光生成電荷を制御するための制御電極と、
前記基板の放射入力面上のフィルタであって、前記フィルタは、金属層と、前記基板の表面と前記金属層との間に1個の誘電体層を有する1つまたは複数の誘電体層と、を有する誘電体-金属バンドパスフィルタを備える、前記フィルタと、
前記基板に対して前記金属層にバイアス電圧を印加するためのコネクタと、
を備える、光検出器。 - 前記バンドパスフィルタは、2つの誘電体層の間に金属層を備える、請求項1に記載の光検出器。
- 前記バンドパスフィルタは、誘導透過フィルタである、請求項1又は2に記載の光検出器。
- 前記光検出器が裏面照射型デバイスであるように、前記基板の前記入力面が裏面にあり、
前記制御電極が前面にある、請求項1から3のいずれか一項に記載の光検出器。 - 前記入力面及び前記制御電極は、前記光検出器が前面照射型デバイスとなるように、前記基板の同じ側に設けられている、請求項1から3のいずれか一項に記載の光検出器。
- 前記1つまたは複数の誘電体層は、前記検出器の面全体にわたって不均一な厚さを有し、それによって、異なる波長のバンドパスフィルタを提供する、請求項1から5のいずれか一項に記載の光検出器。
- 前記金属層は、非導電性材料によって分離された複数のセクションを備え、
各セクションは、独立してバイアスされるように配置される、請求項6に記載の光検出器。 - 前記金属層は、アルミニウム、アルミニウム合金又は銀のうちの1つである、請求項1から7のいずれか一項に記載の光検出器。
- 前記誘電体層のうちの少なくとも1つは、二酸化シリコンを含む、請求項1から8のいずれか一項に記載の光検出器。
- 前記バイアス電圧の極性は、キャリア電荷が前記入力面から離れて、電荷収集配置に向かってバイアスされるような極性である、請求項1から9のいずれか一項に記載の光検出器。
- 前記光検出器は、nチャネル裏面照射型デバイスであり、
前記バイアスは、前記基板に対する前記金属層の負のバイアスである、請求項10に記載の光検出器。 - 前記光検出器は、pチャネル裏面照射型デバイスであり、
前記バイアスは、前記基板に対する前記金属層の正のバイアスである、請求項10に記載の光検出器。 - 前記接続部は、前記金属層を電圧供給部に接続するための1つまたは複数の頂部接点を備える、請求項1から12のいずれか一項に記載の光検出器。
- 前記接続部は、前記金属層を電圧供給部に接続するための1つまたは複数のボンドパッドを備える、請求項1から13のいずれか一項に記載の光検出器。
- 前記光検出器は、CCDセンサを備える、請求項1から14のいずれか一項に記載の光検出器。
- 前記光検出器は、CMOSセンサを備える、請求項1から15のいずれか一項に記載の光検出器。
- 前記光検出器は、CCDイメージセンサである、請求項1から16のいずれか一項に記載の光検出器。
- 前記フィルタは、複数の帯域通過範囲を有する、請求項1から17のいずれか一項に記載の光検出器。
- 前記フィルタは、広帯域通過フィルタである、請求項1から18のいずれか一項に記載の光検出器。
- 前記バンドパスフィルタは、110nmから400nmの波長範囲の少なくとも一部における放射の透過を可能にする、請求項1から19のいずれか一項に記載の光検出器。
- 前記基板は、前記フィルタの下に高ドープ領域を含む、請求項1から20のいずれか一項に記載の光検出器。
- 前記フィルタの下の前記基板が、前記基板の本来のドーピング密度のみを有し、追加のドーピングを有さない、請求項1から20のいずれか一項に記載の光検出器。
- 請求項1から22のいずれか一項に記載の光検出器を備える装置。
- 前記装置は、分光装置である、請求項23に記載の装置。
- 請求項23に記載の装置を含むカメラ。
- 半導体光検出器を動作させる方法であって、
照射を受けるための入力面を有する基板を提供するステップと、
前記基板内の光生成電荷を制御するための複数の電極を提供するステップと、
前記基板の前記入力面上にフィルタを設けるステップであって、前記フィルタは、金属層と、1個以上の誘電体層と、を有する誘電体-金属バンドパスフィルタを含む、前記フィルタを設けるステップと、
前記基板に対して前記金属層にバイアス電圧を印加するステップと、
を備える、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1902046.0A GB201902046D0 (en) | 2019-02-14 | 2019-02-14 | Biased idf photodetector |
GB1902046.0 | 2019-02-14 | ||
PCT/GB2020/050358 WO2020165607A1 (en) | 2019-02-14 | 2020-02-14 | Photodetectors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022520715A true JP2022520715A (ja) | 2022-04-01 |
JPWO2020165607A5 JPWO2020165607A5 (ja) | 2023-02-22 |
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ID=65998758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021541088A Pending JP2022520715A (ja) | 2019-02-14 | 2020-02-14 | 光検出器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11996426B2 (ja) |
EP (1) | EP3925006B1 (ja) |
JP (1) | JP2022520715A (ja) |
CN (1) | CN113424321A (ja) |
GB (2) | GB201902046D0 (ja) |
WO (1) | WO2020165607A1 (ja) |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6397905A (ja) | 1986-10-14 | 1988-04-28 | Minolta Camera Co Ltd | 金属干渉フイルタ |
GB2371403B (en) | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
JP2005045098A (ja) | 2003-07-24 | 2005-02-17 | Sanyo Electric Co Ltd | 受光素子 |
US8212901B2 (en) * | 2008-02-08 | 2012-07-03 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with reduced leakage photodiode |
JP4995231B2 (ja) | 2008-05-30 | 2012-08-08 | キヤノン株式会社 | 光学フィルタ |
JP2011043681A (ja) | 2009-08-21 | 2011-03-03 | Canon Inc | 光学素子、光検出素子、光変調素子、撮像素子及びカメラ |
US8692198B2 (en) * | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
JP6226606B2 (ja) | 2013-07-23 | 2017-11-08 | キヤノン株式会社 | カラーフィルタアレイ、固体撮像素子、撮像装置 |
WO2015148861A1 (en) * | 2014-03-26 | 2015-10-01 | California Institute Of Technology | Subnanosecond scintillation detector |
US10078142B2 (en) * | 2014-03-26 | 2018-09-18 | California Institute Of Technology | Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors |
CN115980901A (zh) | 2014-06-18 | 2023-04-18 | 唯亚威通讯技术有限公司 | 金属-电介质滤光器、传感器设备及制造方法 |
CN106033927A (zh) * | 2015-03-18 | 2016-10-19 | 台达电子工业股份有限公司 | 工频电流变换器及其控制方法 |
KR102420017B1 (ko) * | 2015-10-06 | 2022-07-12 | 삼성전자주식회사 | 광학필터 및 이를 포함하는 전자장치 |
US10170509B2 (en) | 2016-02-12 | 2019-01-01 | Viavi Solutions Inc. | Optical filter array |
US10451783B2 (en) | 2017-05-22 | 2019-10-22 | Viavi Solutions Inc. | Induced transmission filter having plural groups of alternating layers of dielectric material for filtering light with less than a threshold angle shift |
-
2019
- 2019-02-14 GB GBGB1902046.0A patent/GB201902046D0/en not_active Ceased
-
2020
- 2020-02-14 CN CN202080013604.3A patent/CN113424321A/zh active Pending
- 2020-02-14 US US17/415,554 patent/US11996426B2/en active Active
- 2020-02-14 EP EP20709291.7A patent/EP3925006B1/en active Active
- 2020-02-14 GB GB2002083.0A patent/GB2589647A/en not_active Withdrawn
- 2020-02-14 JP JP2021541088A patent/JP2022520715A/ja active Pending
- 2020-02-14 WO PCT/GB2020/050358 patent/WO2020165607A1/en unknown
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Publication number | Publication date |
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GB2589647A (en) | 2021-06-09 |
US11996426B2 (en) | 2024-05-28 |
GB202002083D0 (en) | 2020-04-01 |
US20220059591A1 (en) | 2022-02-24 |
EP3925006A1 (en) | 2021-12-22 |
GB201902046D0 (en) | 2019-04-03 |
WO2020165607A1 (en) | 2020-08-20 |
EP3925006B1 (en) | 2023-06-28 |
CN113424321A (zh) | 2021-09-21 |
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