JP2022520169A - ドハティ電力増幅器 - Google Patents
ドハティ電力増幅器 Download PDFInfo
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- JP2022520169A JP2022520169A JP2021545448A JP2021545448A JP2022520169A JP 2022520169 A JP2022520169 A JP 2022520169A JP 2021545448 A JP2021545448 A JP 2021545448A JP 2021545448 A JP2021545448 A JP 2021545448A JP 2022520169 A JP2022520169 A JP 2022520169A
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- power amplifier
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- coupler
- doherty
- auxiliary power
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
実施の形態1にかかる対称な構造を有するドハティ電力増幅器について説明する。図1に、実施の形態1にかかるドハティ電力増幅器に組み込まれる基本的電力増幅器1000の構成を模式的に示す。基本的電力増幅器1000は、ドハティ電力増幅器に設けられる主電力増幅器及び補助電力増幅器の両方に対して適用可能なものとして構成される。基本的電力増幅器1000は、2つのFET(Field Effect Transistor:電界効果トランジスタ)が積層された構成を有する。電力増幅器10は、FET M1及びM2、抵抗R1、キャパシタC1、及び、インダクタL1及びL2を有する。
ここで、V1P、I1P、V1B及びI1Bは図2に掲載され、V2P、I2P及びZ2Bは図3に掲載されている。「V」は各電力増幅器の出力電圧を示し、「I」は各電力増幅器の出力電流を示し、下付き文字「1」は主電力増幅器を示し、下付き文字「2」は補助電力増幅器を示し、「P」はピーク電力の状態を示し、「B」は3dBバックフ電力の状態を示している。位相差θは、主電力増幅器及び補助電力増幅器の出力間で維持される。Z11、Z12、Z21及びZ22は対称型結合器3のZパラメータの要素である。この場合(図5)、対称型結合器3は、2つの集中要素Z1及びZ2と負荷Z3とを有するので、Zパラメータは次式で表される。
I. X=0の場合、PM_in=PA_in
II. 0<X<6の場合、PM_in-PA_in=2X/3[dB]
III. X>6の場合、PM_in-PA_in=4[dB]
なお、本発明は上記実施の形態に限られたものではなく、趣旨を逸脱しない範囲で適宜変更することが可能である。例えば、上述の実施の形態では、FET M1及びM2をNchのMOSFETとして構成されている。しかし、FET M1及びM2はPch(Pチャネル)のMOSFETとして構成されてもよい。また、FET M1及びM2は、MOSFET以外の他のタイプのトランジスタとして構成されてもよい。
2、92 補助電力増幅器
3 対称型結合器
9 一般的な結合器
10、20、31 集中素子
30、30A インピーダンス変換器
32、94、R1 抵抗
93 素子
100 対称型ドハティ電力増幅器
900 一般的なドハティ電力増幅器
1000 基本的電力増幅器
C1、C10、C20、C30 キャパシタ
M1、M2 FET
L1、L2、L10、L20、L30 インダクタ
TL 伝送線路
OL1、OL2 オフセット線路
Claims (4)
- 入力信号が入力される主電力増幅器と、
前記入力信号が入力される補助電力増幅器と、
前記主電力増幅器の出力及び前記補助電力増幅器の出力と接続される結合器と、を備え、
前記結合器は、
結合点に接続されるインピーダンス変換器と、
前記主電力増幅器の前記出力と前記結合点との間に接続される第1の集中素子と、
前記補助電力増幅器の前記出力と前記結合点との間に接続される第2の集中素子と、を備え、
前記主電力増幅器の前記出力と前記結合点との間の長さは、前記補助電力増幅器の前記出力と前記結合点との間の長さと同じである、
ドハティ電力増幅器。 - 前記第1の集中素子のインピーダンスZ1、前記第2の集中素子のインピーダンスZ2及び前記インピーダンス変換器のインピーダンスZ3は、目的関数のZ11、Z12、Z21及びZ22を用いて決定され、Z11、Z12、Z21及びZ22は前記結合器のZパラメータの要素であり、
Vが前記主電力増幅器及び前記補助電力増幅器の出力電圧を示し、Iが前記主電力増幅器及び前記補助電力増幅器の出力電流を示し、下付き文字1が前記主電力増幅器を示し、下付き文字2が前記補助電力増幅器を示し、下付き文字Pがピーク電力の状態を示し、下付き文字Bが3dBバックオフ電力の状態を示すものとして、前記目的関数は以下の式で示される、
- Xを任意の実数として、前記ドハティ電力増幅器のバックオフがXdB、前記主電力増幅器の入力電圧がPM_IN、前記補助電力増幅器の入力電圧がPA_INである場合、
X=0の場合に、PM_IN=PA_IN、
0<X<6の場合に、PM_IN-PA_IN=2X/3[dB]、
X>6の場合に、PM_IN-PA_IN=4[dB]である、
請求項1に記載のドハティ電力増幅器。 - 前記第1及び第2の集中素子はインダクタである、
請求項1乃至3のいずれか一項に記載のドハティ電力増幅器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962805012P | 2019-02-13 | 2019-02-13 | |
US62/805,012 | 2019-02-13 | ||
PCT/JP2020/005407 WO2020166629A1 (en) | 2019-02-13 | 2020-02-12 | Doherty power amplifier |
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JP2022520169A true JP2022520169A (ja) | 2022-03-29 |
JP7298700B2 JP7298700B2 (ja) | 2023-06-27 |
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JP2021545448A Active JP7298700B2 (ja) | 2019-02-13 | 2020-02-12 | ドハティ電力増幅器 |
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US (1) | US20220360231A1 (ja) |
JP (1) | JP7298700B2 (ja) |
WO (1) | WO2020166629A1 (ja) |
Families Citing this family (2)
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US11973474B2 (en) * | 2019-04-22 | 2024-04-30 | Georgia Tech Research Corporation | Power amplifiers and transmission systems and methods of broadband and efficient operations |
EP4014315A1 (en) | 2019-08-13 | 2022-06-22 | Mixcomm, Inc. | Power amplifier |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005117599A (ja) * | 2003-10-08 | 2005-04-28 | Hiroshi Suzuki | 高周波増幅器 |
JP2005130013A (ja) * | 2003-10-21 | 2005-05-19 | Shimada Phys & Chem Ind Co Ltd | 電力合成形高効率増幅器 |
JPWO2007015462A1 (ja) * | 2005-08-01 | 2009-02-19 | 三菱電機株式会社 | 高効率増幅器 |
JP2010536224A (ja) * | 2007-08-06 | 2010-11-25 | ウィパム,インコーポレイテッド | 広帯域増幅装置 |
JPWO2009131138A1 (ja) * | 2008-04-24 | 2011-08-18 | 日本電気株式会社 | 増幅器 |
JP2014082749A (ja) * | 2012-09-28 | 2014-05-08 | Fordan Kk | 複合電力増幅器を有する複合送信機 |
US20170005620A1 (en) * | 2015-07-01 | 2017-01-05 | Telefonaktiebolaget L M Ericsson (Publ) | Class-B/C Doherty Power Amplifier |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4667141B2 (ja) | 2005-07-05 | 2011-04-06 | ヤンマー株式会社 | 旋回作業車 |
JP2009131138A (ja) | 2007-11-28 | 2009-06-11 | Ngk Spark Plug Co Ltd | 積層型圧電アクチュエータ素子 |
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2020
- 2020-02-12 WO PCT/JP2020/005407 patent/WO2020166629A1/en active Application Filing
- 2020-02-12 US US17/430,036 patent/US20220360231A1/en active Pending
- 2020-02-12 JP JP2021545448A patent/JP7298700B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005117599A (ja) * | 2003-10-08 | 2005-04-28 | Hiroshi Suzuki | 高周波増幅器 |
JP2005130013A (ja) * | 2003-10-21 | 2005-05-19 | Shimada Phys & Chem Ind Co Ltd | 電力合成形高効率増幅器 |
JPWO2007015462A1 (ja) * | 2005-08-01 | 2009-02-19 | 三菱電機株式会社 | 高効率増幅器 |
JP2010536224A (ja) * | 2007-08-06 | 2010-11-25 | ウィパム,インコーポレイテッド | 広帯域増幅装置 |
JPWO2009131138A1 (ja) * | 2008-04-24 | 2011-08-18 | 日本電気株式会社 | 増幅器 |
JP2014082749A (ja) * | 2012-09-28 | 2014-05-08 | Fordan Kk | 複合電力増幅器を有する複合送信機 |
US20170005620A1 (en) * | 2015-07-01 | 2017-01-05 | Telefonaktiebolaget L M Ericsson (Publ) | Class-B/C Doherty Power Amplifier |
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Publication number | Publication date |
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WO2020166629A1 (en) | 2020-08-20 |
JP7298700B2 (ja) | 2023-06-27 |
US20220360231A1 (en) | 2022-11-10 |
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