JP2022500973A - 緩衝された直接注入ピクセルの自動ゼロ - Google Patents
緩衝された直接注入ピクセルの自動ゼロ Download PDFInfo
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- JP2022500973A JP2022500973A JP2021538182A JP2021538182A JP2022500973A JP 2022500973 A JP2022500973 A JP 2022500973A JP 2021538182 A JP2021538182 A JP 2021538182A JP 2021538182 A JP2021538182 A JP 2021538182A JP 2022500973 A JP2022500973 A JP 2022500973A
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- 238000002347 injection Methods 0.000 title claims abstract description 38
- 239000007924 injection Substances 0.000 title claims abstract description 38
- 239000003990 capacitor Substances 0.000 claims abstract description 41
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 12
- 230000010354 integration Effects 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 238000005549 size reduction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
- H03F3/45641—Measuring at the loading circuit of the differential amplifier
- H03F3/45654—Controlling the active amplifying circuit of the differential amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (11)
- 光電流源;
読出回路;及び
緩衝された直接注入積分ネットワーク;
を含むピクセルであって、
前記ネットワークが、
前記光電流源に結合された入力ノード;
前記入力ノードに結合された注入トランジスタ;
前記注入トランジスタと基準電圧との間に結合された積分キャパシタ;
第1入力及び第2入力並びに出力を有する増幅器であり、前記出力は、前記注入トランジスタのゲート及び前記第1入力に結合されている、増幅器;
前記入力ノードと前記第2入力との間に結合されているヌルキャパシタ;及び
ダイオードバイアス電圧と前記入力ノードとの間に結合された第1ヌルスイッチと、前記第2入力と前記出力との間に結合された第2ヌルスイッチとを含む2つのヌルスイッチ;
を含み、
前記2つのヌルスイッチは、通常動作中は開であり、前記積分キャパシタ上で電荷が収集されないヌル期間中は閉である、
ピクセル。 - 前記増幅器が共通ソース増幅器である、請求項1に記載のピクセル。
- 前記第1入力は正入力であり、前記第2入力は反転入力である、請求項2に記載のピクセル。
- 前記ダイオードバイアス電圧は、他のピクセルの光電流源に印加されるグローバル電圧である、請求項1に記載のピクセル。
- 前記積分キャパシタと並列に結合されたリセットスイッチをさらに含む、請求項1に記載のピクセル。
- 緩衝された直接注入ピクセルを動作させる方法であって:
通常動作モードの間、光電流源のバイアスを制御するために、増幅器の出力で注入トランジスタのゲート電圧を制御するステップであり、前記増幅器の反転入力がヌルキャパシタを介して前記注入トランジスタの入力に接続されている、ステップ;
ヌル動作の間、前記ヌルキャパシタを前記増幅器の前記出力に直接接続するために、第1スイッチを閉じるステップ;
前記ヌル動作の間に、前記注入トランジスタの前記入力をバイアス電圧に直接結合して、ヌルキャパシタに前記増幅器の前記出力と前記バイアス電圧との間の差を記憶させるために、第2スイッチを閉じるステップ;及び
ヌル動作の後に、前記第1スイッチ及び前記第2スイッチを開くことにより、ヌルキャパシタに記憶された電圧を前記反転入力に供給するステップ;
を含む方法。 - 前記増幅器が共通ソース増幅器である、請求項6に記載の方法。
- 前記出力が、前記増幅器の非反転入力に接続されている、請求項6に記載の方法。
- 前記バイアス電圧は、他のピクセルの光電流源に印加されるグローバル電圧である、請求項6に記載の方法。
- さらに、積分キャパシタをリセットするステップを含む請求項6記載の方法。
- 前記ヌル動作は、前記積分キャパシタがリセットされている間に行われる、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862741203P | 2018-10-04 | 2018-10-04 | |
US62/741,203 | 2018-10-04 | ||
PCT/US2019/054200 WO2020072581A1 (en) | 2018-10-04 | 2019-10-02 | Autozero of buffered direct injection pixels |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022500973A true JP2022500973A (ja) | 2022-01-04 |
JP7076649B2 JP7076649B2 (ja) | 2022-05-27 |
Family
ID=68296758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021538182A Active JP7076649B2 (ja) | 2018-10-04 | 2019-10-02 | 緩衝された直接注入ピクセルの自動ゼロ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11063074B2 (ja) |
EP (1) | EP3861718A1 (ja) |
JP (1) | JP7076649B2 (ja) |
IL (1) | IL281724B (ja) |
WO (1) | WO2020072581A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020072584A1 (en) * | 2018-10-04 | 2020-04-09 | Raytheon Company | Pumped large full well pixel |
WO2022179930A1 (en) * | 2021-02-23 | 2022-09-01 | Sony Semiconductor Solutions Corporation | Pixel circuit and solid-state imaging device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0730714A (ja) * | 1993-07-09 | 1995-01-31 | Olympus Optical Co Ltd | 固体撮像素子 |
JP2000151373A (ja) * | 1998-04-22 | 2000-05-30 | Mitsubishi Electronics America Inc Digital Electronics Center East | 入力信号のピ―ク値を検出するためのシステム、およびオフセット相殺方法 |
JP2006301341A (ja) * | 2005-04-21 | 2006-11-02 | Canon Inc | 焦点検出用固体撮像装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69606147T2 (de) * | 1995-10-31 | 2000-06-29 | Imec Inter Uni Micro Electr | Schaltung, Bildelement, Vorrichtung und Verfahren zur Verminderung des Rauschens örtlich unveränderlicher Muster in Festkörperbildaufnahmevorrichtungen |
US6384413B1 (en) * | 1998-10-13 | 2002-05-07 | California Institute Of Technology | Focal plane infrared readout circuit |
CN100380932C (zh) * | 2005-04-07 | 2008-04-09 | 北京大学 | 焦平面读出电路像素单元电路 |
US9191586B2 (en) * | 2013-07-08 | 2015-11-17 | Sensors Unlimited, Inc. | Buffered direct injection pixel for infrared detector arrays |
-
2019
- 2019-10-02 WO PCT/US2019/054200 patent/WO2020072581A1/en unknown
- 2019-10-02 JP JP2021538182A patent/JP7076649B2/ja active Active
- 2019-10-02 EP EP19791030.0A patent/EP3861718A1/en not_active Withdrawn
- 2019-10-03 US US16/592,048 patent/US11063074B2/en active Active
-
2021
- 2021-03-22 IL IL281724A patent/IL281724B/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0730714A (ja) * | 1993-07-09 | 1995-01-31 | Olympus Optical Co Ltd | 固体撮像素子 |
JP2000151373A (ja) * | 1998-04-22 | 2000-05-30 | Mitsubishi Electronics America Inc Digital Electronics Center East | 入力信号のピ―ク値を検出するためのシステム、およびオフセット相殺方法 |
JP2006301341A (ja) * | 2005-04-21 | 2006-11-02 | Canon Inc | 焦点検出用固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3861718A1 (en) | 2021-08-11 |
IL281724A (en) | 2021-05-31 |
IL281724B (en) | 2022-01-01 |
US11063074B2 (en) | 2021-07-13 |
US20200111826A1 (en) | 2020-04-09 |
JP7076649B2 (ja) | 2022-05-27 |
WO2020072581A1 (en) | 2020-04-09 |
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