JP2022180387A - 物理的気相堆積処理システムのターゲットの冷却 - Google Patents
物理的気相堆積処理システムのターゲットの冷却 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
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Abstract
Description
Claims (15)
- 物理的気相堆積ターゲットアセンブリであって、
原料と、
前面及び裏面を有するバッキング板であって、前記バッキング板の前面に前記原料を支持するように構成されたバッキング板と、
冷却流体に接続されるように構成された注入端部、前記注入端部に流体連結された排出端部、及び前記注入端部と前記排出端部との間の複数の湾曲部を含む冷却チューブであって、物理的気相堆積処理中に前記バッキング板と前記原料を冷却するため、前記バッキング板の前記裏面に隣接して配置されるように構成された冷却チューブと、
を備える、物理的気相堆積ターゲットアセンブリ。 - 前記冷却チューブは前記バッキング板から分離し、前記冷却チューブは前記冷却流体を含む冷却閉ループを提供する、請求項1に記載の物理的気相堆積ターゲットアセンブリ。
- 前記複数の湾曲部は、複数の列部を含む流れパターンを画定し、前記バッキング板は更に、前記冷却チューブを受容するように構成された前記裏面にチャネルを備える、請求項1に記載の物理的気相堆積ターゲットアセンブリ。
- 前記流れパターンは、少なくとも6つの列部と5つの湾曲部とを備える、請求項3に記載の物理的気相堆積ターゲットアセンブリ。
- 前記流れパターンは、第1の列部のペアと第2の列部のペアとを備え、前記注入端部が分岐接続によって前記第1の列部のペアと第2の列部のペアとに流体接続された単一の列部に流体接続され、前記排出端部が前記第1の列部のペアと第2の列部のペアとに流体接続されている、請求項2に記載の物理的気相堆積ターゲットアセンブリ。
- 前記流れパターンは、第1の列部のペアと第2の列部のペアとを備え、前記注入端部が分岐接続によって前記第1の列部のペアと第2の列部のペアとに流体接続された単一の列部に流体接続され、前記排出端部が前記第1の列部のペアと第2の列部のペアとに流体接続されている、請求項3に記載の物理的気相堆積ターゲットアセンブリ。
- 前記冷却チューブは、単一の注入端部と単一の排出端部とを備える、請求項6に記載の物理的気相堆積ターゲットアセンブリ。
- 前記冷却チューブは、複数の注入端部と複数の排出端部のうちの少なくとも1つを備える、請求項6に記載の物理的気相堆積ターゲットアセンブリ。
- カバー板を更に備え、前記冷却チューブが前記バッキング板と前記カバー板との間に配置されている、請求項3に記載の物理的気相堆積ターゲットアセンブリ。
- 物理的気相堆積ターゲットアセンブリであって、
原料と、
前面及び裏面を有するバッキング板であって、前記バッキング板の前面に前記原料を支持するように構成されたバッキング板と、
前記バッキング板に連結されたカバー板と、
前記カバー板と前記バッキング板との間に配置されたチャネルとを備え、前記チャネルは、注入端部と排出端部とに流体接続されている少なくとも4つの列部と3つの湾曲部とを含む流れパターンを画定する複数の湾曲部を含み、前記チャネルは、物理的気相堆積処理中に、前記バッキング板と前記ターゲットを冷却するため、前記バッキング板の前記裏面に隣接して冷却流体を流すように構成されている、物理的気相堆積ターゲットアセンブリ。 - 前記チャネルは、前記注入端部に流体接続されている注入列を含む少なくとも5つの列部を含む流れパターンを画定し、前記注入列は、分岐接続によって第1の列部のペアと第2の列部のペアとに流体接続されている、請求項10に記載の物理的気相堆積ターゲットアセンブリ。
- 前記チャネルは、少なくとも6つの列部と5つの湾曲部とを備える流れパターンを画定している、請求項11に記載の物理的気相堆積ターゲットアセンブリ。
- 前記チャネルは、第1の列部のペアと第2の列部のペアとを備える流れパターンを画定し、前記注入端部は分岐接続によって前記第1の列部のペアと第2の列部のペアとに流体接続された単一の列部に流体接続され、前記排出端部は前記第1の列部のペアと第2の列部のペアとに流体接続されている、請求項10に記載の物理的気相堆積ターゲットアセンブリ。
- 前記チャネル内に配置され、前記注入端部及び前記排出端部とに流体接続されたチューブを更に備える、請求項10に記載の物理的気相堆積ターゲットアセンブリ。
- 物理的気相堆積ターゲットを冷却する方法であって、物理的気相堆積処理中に、請求項10に記載のチャネルを通って冷却流体を連続的に流すことを含む、方法。
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US15/411,579 US10325763B2 (en) | 2017-01-20 | 2017-01-20 | Physical vapor deposition processing systems target cooling |
US15/411,579 | 2017-01-20 | ||
JP2019539191A JP7134175B2 (ja) | 2017-01-20 | 2018-01-16 | 物理的気相堆積処理システムのターゲットの冷却 |
PCT/US2018/013802 WO2018136395A1 (en) | 2017-01-20 | 2018-01-16 | Physical vapor deposition processing systems target cooling |
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US10950498B2 (en) | 2017-05-31 | 2021-03-16 | Applied Materials, Inc. | Selective and self-limiting tungsten etch process |
CN116546817A (zh) | 2017-05-31 | 2023-08-04 | 应用材料公司 | 3d-nand器件中用于字线分离的方法 |
US10685821B2 (en) | 2017-08-18 | 2020-06-16 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
TWI788618B (zh) * | 2019-01-25 | 2023-01-01 | 美商應用材料股份有限公司 | 物理氣相沉積靶材組件 |
US11754691B2 (en) * | 2019-09-27 | 2023-09-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Target measurement device and method for measuring a target |
KR102442377B1 (ko) * | 2019-09-27 | 2022-09-13 | 주식회사 뷰웍스 | 신틸레이터 증착을 위한 기판 고정 장치, 이를 포함하는 기판 증착 장치 및 이를 이용한 신틸레이터의 증착 방법 |
US20220372613A1 (en) * | 2019-09-27 | 2022-11-24 | Vieworks Co., Ltd. | Substrate fixing device for scintillator deposition, substrate deposition apparatus including the same, and method of depositing a scintillator using the same |
TW202122909A (zh) * | 2019-10-25 | 2021-06-16 | 美商應用材料股份有限公司 | 減少極紫外遮罩毛坯缺陷之方法 |
WO2021162996A1 (en) * | 2020-02-11 | 2021-08-19 | Lam Research Corporation | Cooling plate for semiconductor processing chamber window |
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US10325763B2 (en) | 2019-06-18 |
TWI748037B (zh) | 2021-12-01 |
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JP7480233B2 (ja) | 2024-05-09 |
US20180211826A1 (en) | 2018-07-26 |
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