JP2022139927A - Semiconductor manufacturing device and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a semiconductor manufacturing device capable of suppressing a crack or chipping of a semiconductor wafer during cutting of an edge part of the semiconductor wafer, and a method for manufacturing a semiconductor device.SOLUTION: A semiconductor manufacturing device according to an embodiment comprises a stage which can mount a wafer on a mounting surface. A blade cuts an outer periphery of the wafer toward the mounting surface. A stage comprises a protrusion provided in a position corresponding to a first region in which a material film is not formed on a first surface facing the mounting surface in the outer periphery of the wafer.SELECTED DRAWING: Figure 4

Description

The present embodiment relates to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device.

There is a method of forming semiconductor elements on each of a plurality of semiconductor wafers and bonding the semiconductor wafers together to electrically connect the semiconductor elements. Before or after bonding a plurality of semiconductor wafers, there is a step of cutting (trimming) the edge portions of the semiconductor wafers.

However, due to the unevenness of the surface of the semiconductor wafer, a load is locally concentrated on the semiconductor wafer, and the edge of the semiconductor wafer may crack or chip during cutting.

JP 2007-096091 A

Provided are a semiconductor manufacturing apparatus and a semiconductor device manufacturing method that suppress cracking or chipping of a semiconductor wafer during cutting of the edge portion of the semiconductor wafer.

A semiconductor manufacturing apparatus according to this embodiment includes a stage on which a wafer can be mounted. The blade cuts the outer periphery of the wafer toward the mounting surface. The stage includes a protruding portion provided at a position corresponding to the first region where the material film is not formed on the first surface of the outer peripheral portion of the wafer, which faces the mounting surface.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic front view which shows the structural example of the cutting apparatus by 1st Embodiment. 1 is a schematic plan view showing a configuration example of a cutting device according to a first embodiment; FIG. FIG. 4 is a schematic plan view of a wafer having contact traces of a holder of a film forming apparatus; FIG. 3B is a schematic cross-sectional view taken along line BB of FIG. 3A; FIG. 4 is a schematic cross-sectional view showing a trimming process of the bonded wafer according to the first embodiment; FIG. 4 is a schematic perspective view showing a trimming process of the bonded wafer according to the first embodiment; The schematic perspective view which shows the structural example of a pad. FIG. 5 is a schematic cross-sectional view showing a state of a trimming process in a comparative example; FIG. 5 is a schematic cross-sectional view showing a state of a trimming process in a comparative example; FIG. 2 is a schematic plan view showing a configuration example of a stage according to the first embodiment; FIG. 9B is a cross-sectional view taken along line BB of FIG. 9A; FIG. 4 is a schematic cross-sectional view showing a process after trimming the outer peripheral portion; FIG. 4 is a schematic cross-sectional view showing a process after trimming the outer peripheral portion; FIG. 4 is a schematic cross-sectional view showing a process after trimming the outer peripheral portion; FIG. 13 is a schematic cross-sectional view showing an example of the internal configuration of a dashed frame B13 in FIG. 12; FIG. 5 is a schematic cross-sectional view showing a configuration example of a stage according to a modified example of the first embodiment; FIG. 11 is a schematic perspective view showing a state of a wafer trimming process using the cutting device according to the second embodiment; FIG. 8 is a schematic plan view showing a configuration example of a stage according to the second embodiment; The schematic front view which shows the structural example of the cutting apparatus by 3rd Embodiment. FIG. 11 is a schematic plan view showing a configuration example of a stage according to a third embodiment; FIG. 11 is a schematic perspective view showing a trimming process of the bonded wafer according to the third embodiment;

Hereinafter, embodiments according to the present invention will be described with reference to the drawings. This embodiment does not limit the present invention. The drawings are schematic or conceptual, and the ratio of each part is not necessarily the same as the actual one. In the specification and drawings, the same reference numerals are given to the same elements as those described above with respect to the previous drawings, and detailed description thereof will be omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic front view showing a configuration example of a cutting device 1 according to the first embodiment. FIG. 2 is a schematic plan view showing a configuration example of the cutting device 1 according to the first embodiment.

A cutting apparatus 1 as a semiconductor manufacturing apparatus includes a stage 10 , a cutting unit 20 , a control section 60 , a stage driving section 45 and an imaging section 50 . Note that the Z direction is substantially perpendicular to the mounting surface F1 of the stage 10 (vertical direction). The X direction and the Y direction are directions orthogonal to each other in a plane (horizontal plane) perpendicular to the Z direction.

The stage 10 is, for example, a disk-shaped table having a substantially flat mounting surface F1, and has a vacuum chuck on the mounting surface F1. The stage 10 holds the wafer 12 placed on the mounting surface F1 stably by vacuum suction. In addition, the stage 10 is configured to be rotatable in a horizontal plane (XY plane) about a rotating shaft 10a passing through the center of the stage 10 and extending in the vertical direction.

The wafer 12 is, for example, a semiconductor substrate such as a silicon substrate having a substantially disk shape, and may be a single wafer 12. However, as shown in FIG. It may be a wafer. A wafer 12 is placed on the stage 10 . The wafer 12 has a notch NT for specifying the orientation (position in the circumferential direction) of the wafer 12, as shown in FIG.

The cutting unit 20 includes a cutting blade 22 attached to the tip of a spindle 24 and a blade driving section 25 that rotates the cutting blade 22 via the spindle 24 . The cutting blade 22 is, for example, an ultra-thin ring-shaped cutting grindstone formed by bonding abrasive grains such as diamond with a bond material. The blade drive unit 25 rotates the cutting blade 22 around its axis 24 a at high speed through the spindle 24 and brings the cutting blade 22 rotated at high speed into contact with the wafer 12 to cut the wafer 12 to form a kerf. groove). The cutting unit 20 of this embodiment cuts a part of the outer peripheral portion 12c of the wafer 12 along the circumferential direction to perform a trimming process to remove the chamfered portion. In this case, the cutting blade 22 is thicker than that used for cutting straight cutting lines (street) between semiconductor elements.

The cutting unit 20 further includes a cutting unit moving mechanism (not shown) and can move in the X, Y, and Z directions. For example, the X direction is the cutting direction. The Y direction is a horizontal direction orthogonal to the cutting direction (X-axis direction), and is the axial direction of the spindle 24 (extending direction of the spindle 24). The Z direction is the depth direction (substantially vertical direction) of cutting. By moving the cutting unit 20 in the Y-axis direction, the cutting edge of the cutting blade 22 can be aligned with the cutting position (cutting line or outer peripheral portion) of the wafer 12 . By moving the cutting unit 20 in the Z-axis direction, the cutting depth of the cutting blade 22 into the wafer 12 can be adjusted.

The stage drive unit 45 can rotate the stage 10 within a horizontal plane about the rotation axis 10a during cutting. As a result, the wafer 12 held on the stage 10 also rotates about the rotating shaft 10a.

The imaging unit 50 has an imaging device such as a CCD. The imaging unit 50 is arranged above the outer peripheral portion 12 c of the wafer 12 and images the wafer 12 . The image capturing unit 50 captures an image of a region including the cut portion (that is, the outer peripheral portion 12 c ) of the wafer 12 and outputs the captured image to the control unit 60 . Thereby, the control unit 60 can specify the orientation (position in the circumferential direction) of the wafer 12 based on the position of the notch NT in FIG.

The control section 60 controls each section of the cutting apparatus 1, such as the stage 10, the cutting unit 20, the stage driving section 45, and the like. The control unit 60 also functions as an image processing unit that processes an image captured by the imaging unit 50 for purposes such as alignment of the wafer 12 and checking of cutting state (chipping) after cutting.

The cutting device 1 having such a configuration cuts one wafer 12 in some cases. However, in recent years, in order to reduce the chip size or package size, the cutting apparatus 1 sometimes cuts a bonded wafer in which a plurality of wafers 12 are bonded (bonded).

Such a cutting device 1 cuts a portion of the outer peripheral portion 12c of the wafer 12 along the circumferential direction while rotating the stage 10 . Further, the cutting device 1 cuts the outer peripheral portion 12c from the surface of the wafer 12 in a substantially vertical direction toward the mounting surface F1, and removes at least part of the R shape of the outer peripheral portion 12c in advance (trimming). As a result, when the back surface of the wafer 12 is subsequently ground by a grinder or the like, the edge angle of the outer peripheral portion 12c of the wafer 12 (the front surface and the back surface of the wafer 12) can be reduced by grinding the wafer 12 until the thickness of the wafer 12 becomes thinner than the depth of cut. The angle of the side surface with respect to ) becomes approximately 90 degrees, and does not form an acute angle shape. As a result, cracking and chipping of the outer peripheral portion 12c of the wafer 12 can be suppressed.

On the other hand, in the film forming process of forming a material film on the front or back surface of the wafer 12, a holder (not shown) is used to hold the wafer 12 on the stage of the film forming apparatus. may come into direct contact with A material film is not formed on the portion of the front surface or the back surface of the wafer 12 that is in contact with the holder, and a contact trace of the holder remains.

FIG. 3A is a schematic plan view of the wafer 12 having contact traces of the holder of the film forming apparatus. FIG. 3B is a schematic cross-sectional view along line BB of FIG. 3A. In this embodiment, the wafer 12 is a bonded wafer obtained by bonding a plurality of wafers 12_1 and 12_2. Hereinafter, 12 is also referred to as a "bonded wafer", and 12_1 and 12_2 are simply referred to as "wafers".

As shown in FIG. 3A, a contact trace CT is provided on the outer peripheral portion 12c of the bonded wafer 12. As shown in FIG. The contact mark CT is a region of the outer peripheral portion 12c that was in contact with the supporting member of the film forming apparatus in the film forming process of the material film TFc. Therefore, the contact marks CT are formed at the positions of the holders of the film forming apparatus, and are formed in the same number as the number of the holders. For example, in the example of FIG. 3A, three holders are provided in the film forming apparatus, and three contact marks CT are formed at corresponding positions on the outer peripheral portion 12c of the bonded wafer 12. FIG. The contact trace CT as the first area is an area where the material film TFc is not formed on the surface facing the mounting surface F1 of the stage 10 in the outer peripheral portion 12c of the wafer 12_2.

Note that the material film TFc may be a material film formed on the back surface of the wafer 12_2 when the material film TFb is formed on the wafer 12_2. Therefore, the material film TFc is a film to be removed in the subsequent back grinding process of the wafer 12_2. For example, the wafers 12_1 and 12_2 have semiconductor elements on their surfaces facing each other, and are electrically connected to each other by being bonded together. When this embodiment is applied to a semiconductor memory, for example, a memory cell array (not shown) is formed on the bonding surface of the wafer 12_1, and a CMOS (Complementally Metal-Oxide-MOS) for controlling the memory cell array is formed on the bonding surface of the wafer 12_2. Semiconductor) circuit (not shown). In this case, the material film TFa may be an interlayer insulating film or a passivation film covering the memory cell array of the wafer 12_1, and exposes part of the wiring connected to the memory cell array. The material film TFb may be an interlayer insulating film or a passivation film covering the CMOS circuit of the wafer 12_2, and exposes part of the wiring connected to the CMOS circuit. By bonding the wafers 12_1 and 12_2, the memory cell array of the wafer 12_1 and the CMOS circuit of the wafer 12_2 are electrically connected via wiring. Further, part of the outer peripheral portion 12c of the bonded wafer 12 is cut in a trimming process, and the wafer 12_1 is thinned by back grinding or the like while leaving the memory cell array on the CMOS circuit. As a result, a semiconductor memory is formed in which a memory cell array is provided on a CMOS circuit as a controller. Thus, the material film TFc may be removed using back grinding or the like.

As shown in FIG. 3B, the material film TFc formed by the film forming apparatus is not provided at the position of the contact trace CT, and the underlying material film or wafer 12_2 is exposed. The material films TFa, TFb, and TFc may be, for example, silicon oxide films, silicon nitride films, or the like, and may be interlayer insulating films, protective films (passivation films), or the like. The wafers 12_1 and 12_2 have a roundness (bevel portion) having a certain curvature on the side surface of the outer peripheral portion 12c. Accordingly, in the region where there is no contact trace CT, the material film TFc is formed so as to wrap around the side surface of the wafer 12 at the outer peripheral portion 12c, and the thickness of the material film TFc gradually increases toward the outside of the wafers 12_1 and 12_2. thin. On the other hand, in the region of the contact mark CT, the material film TFc is missing and a step portion ST is formed.

FIG. 4 is a schematic cross-sectional view showing the trimming process of the bonded wafer 12 according to the first embodiment. FIG. 5 is a schematic perspective view showing the trimming process of the bonded wafer 12 according to the first embodiment.

The cutting apparatus 1 according to the present embodiment cuts a part of the outer peripheral portion 12c of the bonded wafer 12 placed on the stage 10 (the outer peripheral portion 12c of the wafer 12_1 and the upper portion of the outer peripheral portion 12c of the wafer 12_2) with the cutting blade 22. to cut In the present embodiment, the bonded wafer 12 is placed with the surface of the wafer 12_1 to be thinned in the back grinding step facing upward (+Z direction). A space is formed between the surface of the stage 10 and the outer peripheral portion 12c of the wafer 12 in the region of the stage 10 corresponding to the contact marks CT of the wafer 12_2. A pad 70 is provided in this space.

Pad 70 is provided between contact trace CT of wafer 12_2 and stage 10 . The pad 70 is arranged on the side opposite to the blade 22 across the outer peripheral portion 12c of the wafer 12_2, and is provided directly below the contact mark CT of the outer peripheral portion 12c. Thus, the pad 70 functions as a spacer that fills the space of the contact mark CT between the stage 10 and the outer peripheral portion 12c, and functions as a supporting portion that supports the outer peripheral portion 12c in the contact mark CT. The pad 70 preferably has a lower elastic modulus than the wafer 12_2 or the material film TFc so as not to damage the bonded wafer 12 or the material film TFc. In addition, the stage 10 is generally made of a material having a high elastic modulus in order to reliably support the bonded wafer 12 while ensuring flatness during trimming. A material such as ceramic, stone, or metal is used for the stage 10, for example. On the other hand, the pad 70 preferably has a lower modulus of elasticity than the stage 10 so that the wafer 12_2 or the material film TFc in contact with the pad 70 is not damaged, as described above. A material such as resin, for example, is used for the pad 70 .

FIG. 6 is a schematic perspective view showing a configuration example of the pad 70. As shown in FIG. The pad 70 has a substantially rectangular parallelepiped shape with a recess 71 on one side or corner to match the curvature of the beveled portion of the outer peripheral portion 12c. The shape of the depression 71 corresponds to the shape of the bevel portion of the outer peripheral portion 12c of the wafer 12_2. The length of the pad 70 in the X direction is, for example, about 30 to 50 mm, the length in the Y direction is, for example, about 5 to 10 mm, and the height in the Z direction is, for example, about 2 to 3 mm. . The curvature of the portion of the depression 71 is, for example, 1/r=approximately 1/(1 mm) to 1/(2 mm).

Referring again to FIGS. 4 and 5, the pads 70 are provided so as to correspond to the contact traces CT. For example, the position and number of contact marks CT are determined depending on the position and number of holders of the film forming apparatus. Therefore, if the positions and the number of holders of the film forming apparatus are determined, the position coordinates of the contact marks CT can be expressed by (X, Y) coordinates with the position of the notch NT of the bonded wafer 12 as a reference. . A step or groove is formed in the stage 10 based on the positional coordinates of the contact trace CT, and the pad 70 is arranged in the step or groove. As a result, in the trimming process, if the bonded wafer 12 is placed on the stage 10 with the notch NT positioned at a predetermined position, the pad 70 will naturally conform to the contact mark CT of the wafer 12_2, and the contact mark CT will be formed. The outer peripheral portion 12c of the wafer 12_2 can be supported. That is, since the positional coordinates (X, Y) of the contact mark CT are known in advance, if the position of the notch NT is set to a predetermined position on the stage 10, the pad 70 is positioned between the stage 10 and the wafer 12_2 by the contact mark CT. The space between and can be filled to support the bonded wafer 12 . As a result, cracking or chipping of the bonded wafer 12 due to the cutting pressure or impact of the cutting blade 22 can be suppressed in the trimming process of the outer peripheral portion 12c.

7 and 8 are schematic cross-sectional views showing the state of the trimming process in the comparative example. The pad 70 is not provided in this comparative example. If the pad 70 is not provided, as shown in FIG. 7, the contact trace CT between the outer peripheral portion 12c of the wafer 12_2 and the stage 10 remains empty. In this case, when the cutting blade 22 cuts the outer peripheral portion 12c in the trimming process, the remaining portion of the outer peripheral portion 12c of the wafer 12_2 is pressed in the -Z direction at the position of the contact mark CT, and as shown in FIG. , the lower end of the contact trace CT of the wafer 12_2 may be damaged by cracking or chipping. Such breakage disables subsequent transport and processing of bonded wafer 12, leading to reduced yield.

On the other hand, the cutting device 1 according to the present embodiment shown in FIGS. 4 and 5 includes a pad 70 provided between the contact mark CT of the outer peripheral portion 12c cut by the cutting blade 22 and the stage 10. . The pads 70 support the wafer 12_2 at the contact marks CT, thereby dispersing the pressing force from the cutting blade 22 and suppressing cracking or chipping of the remaining portion of the outer peripheral portion 12c of the wafer 12_2. As a result, the cutting blade 22 can cut the outer peripheral portion 12c of the bonded wafer 12 to an arbitrary depth (position in the Z direction).

FIG. 9A is a schematic plan view showing a configuration example of the stage 10 according to the first embodiment. FIG. 9B is a cross-sectional view along line BB of FIG. 9A. The stage 10 has a pad 70 at a position corresponding to the contact mark (first area) CT of the wafer 12_2. In this embodiment, as shown in FIG. 3A, the contact marks CT are provided at three locations on the outer peripheral portion 12c. Along with this, as shown in FIG. 9A, stepped portions ST are provided at three locations on the outer peripheral portion of the stage 10, and pads 70 are fixed to the stepped portions ST. The pad 70 may be adsorbed and fixed to the stepped portion ST with a vacuum chuck, or may be adhesively fixed with a double-sided tape.

As shown in FIG. 9B, the pad 70 protrudes from the mounting surface F1 of the stage 10. As shown in FIG. The protruding portion P70 of the pad 70 is formed with a recess 71 at its side or corner so as to fill the space between the contact mark CT and the mounting surface F1 of the stage 10 . The recess 71 is recessed with a curvature corresponding to the roundness of the bevel portion of the wafer 12_2.

The height of the protruding portion P70 is preferably substantially equal to or slightly higher than the Z-direction gap between the mounting surface F1 and the contact trace CT of the wafer 12 . The appropriate height of the protrusion P70 depends on the elastic modulus of the pad 70. The pad 70 is initially smaller than the gap between the mounting surface F1 and the contact mark CT of the wafer 12, and has a function of expanding the wafer 12 by heat or light after the wafer 12 is mounted to complement the flatness of the wafer 12. may

10 to 12 are schematic cross-sectional views showing the steps after trimming the outer peripheral portion 12c. As shown in FIG. 10, the outer peripheral portion 12c of the bonded wafer 12 is cut to a predetermined depth by trimming. At this stage, the lower portion of the outer peripheral portion 12c of the wafer 12_2 remains. This allows transport and other processing of the bonded wafer 12 .

Next, as shown in FIG. 11, the wafer 12_1 is polished from the back side of the wafer 12_1 to thin the wafer 12_1 (back grinding step). As a result, a structure in which the material films TFa and TFb are provided on the wafer 12_2 as shown in FIG. 12 is obtained.

FIG. 13 is a schematic cross-sectional view showing an example of the internal configuration of the dashed-line frame B13 in FIG. A CMOS circuit 31 is provided on the wafer 12_2. A material film (interlayer insulating film) TFb is provided so as to cover the CMOS circuit 31 . The wiring 38 electrically connected to the CMOS circuit 31 is exposed on the bonding surface S from the material film TFa.

A memory cell array MCA is provided above the CMOS circuit 31 . The memory cell array MCA has a plurality of memory cells at positions corresponding to intersections of word lines WL and semiconductor columns CL connected to bit lines BL. The memory cells are three-dimensionally arranged. A material film (interlayer insulating film) TFa is provided to cover the memory cell array MCA. The wiring 41 electrically connected to the memory cell array MCA is exposed on the bonding surface S from the material film TFa. The material films TFa and TFb are bonded to each other on the bonding surface S, and the wirings 38 and 41 are connected to each other on the bonding surface S.

This embodiment can be applied to the trimming process of the bonded wafer 12 of the semiconductor memory bonded in this way.

In addition, the present embodiment can be applied not only to the contact marks CT of the pointing tool in the film formation process, but also to unnecessary etching of the back surface of the wafer 12_2 caused by the RIE (Reactive Ion Etching) method.

(Modification)
FIG. 14 is a schematic cross-sectional view showing a configuration example of the stage 10 according to a modified example of the first embodiment. FIG. 14 shows a cross section of a portion corresponding to FIG. 9B of the first embodiment.

In the first embodiment, the pad 70 is formed separately from the stage 10 and fixed to the step portion ST of the stage 10 .

In contrast, in this modified example, the pad 70 is integrally formed with the stage 10 . In this case, pad 70 is made of the same material as stage 10 and is continuous as part of stage 10 . Protruding portion P70 protrudes from mounting surface F1 as a part of stage 10 . As described above, the stage 10 of this modification includes the projecting portion P70 provided at a position corresponding to the contact mark CT of the wafer 12 .

Even with such a configuration, the effects of the first embodiment can be obtained. Further, in this modification, there is no need to form the pad 70 in addition to the stage 10, so the process of forming the stage 10 and the projecting portion P70 is simplified and shortened.

(Second embodiment)
FIG. 15 is a schematic perspective view showing the state of the trimming process of the wafer 12 using the cutting device 1 according to the second embodiment. FIG. 16 is a schematic plan view showing a configuration example of the stage 10 according to the second embodiment. 16 may be the same as the cross section shown in FIG. 9B.

A pad 70 is provided on the stage 10 of the cutting device 1 according to the second embodiment over the entire outer peripheral portion of the stage 10 . That is, the pads 70 are provided over the entire position on the mounting surface F1 of the stage 10 corresponding to the outer peripheral portion 12c of the wafer 12_2. Accordingly, even if the position or the number of contact marks CT on the outer peripheral portion 12c of the wafer 12_2 changes, the pad 70 can correspond to any number of contact marks CT at any position on the outer peripheral portion 12c. As a result, the cutting apparatus 1 according to the second embodiment can trim the wafer 12 while suppressing cracking or chipping of the wafer 12 on which films are formed by various types of film forming apparatuses.

The modification described above may be applied to the second embodiment. 14 may be provided on the entire mounting surface F1 of the stage 10 corresponding to the outer peripheral portion 12c of the wafer 12_2. As a result, the second embodiment can also obtain the effects of the above modification.

(Third Embodiment)
FIG. 17 is a schematic front view showing a configuration example of the cutting device 1 according to the third embodiment. The third embodiment further includes a protruding mechanism 80 that protrudes the pad 70 from the mounting surface F1 of the stage 10. FIG. The protruding mechanism 80 receives a command from the control unit 60 and controls the pad 70 to protrude the pad 70 from the mounting surface F1 of the stage 10 at a position corresponding to the contact mark CT of the wafer 12 . The position coordinates of the contact marks CT are stored in the memory 61 . The projection mechanism 80 obtains the position coordinates of the contact marks CT from the memory 61 and drives the pads 70 at positions corresponding to the position coordinates to project them.

FIG. 18 is a schematic plan view showing a configuration example of the stage 10 according to the third embodiment. FIG. 19 is a schematic perspective view showing the trimming process of the bonded wafer 12 according to the third embodiment.

The pad 70 has a plurality of divided regions 70a, 70b, 70c, . The regions 70a, 70b, 70c, . For example, the pad 70 is made of a flexible material such as resin, and the regions 70a and the like are airtightly divided hollow bags. By introducing a gas into the interior of the region 70a and the like, the region 70a and the like are selectively inflated and protrude from the mounting surface F1 of the stage . For example, in FIG. 19, the protruding mechanism 80 introduces gas into the region 70a to selectively protrude the region 70a. On the other hand, the regions 70b-70d do not protrude.

The protruding mechanism 80 includes a pump that sends gas to any of the regions 70a and the like, and piping 81 that connects the pump and the regions 70a and the like, respectively. The projecting mechanism 80 introduces gas into any of the regions 70a or the like at positions corresponding to the position coordinates of the contact marks CT to project them. As a result, even if the position or the number of contact marks CT changes in the outer peripheral portion 12c of the wafer 12_2, the projection mechanism 80 can project the region 70a or the like corresponding to any position and any number of contact marks CT. can. As a result, the cutting apparatus 1 according to the third embodiment can trim the wafers 12_2 on which films are formed by various types of film forming apparatuses while suppressing cracks or chipping.

The protruding mechanism 80 protrudes the pad 70 with air pressure, but other mechanisms may be used to protrude the pad 70 . For example, a piezoelectric element may be used for the pad 70 . In this case, the projection mechanism 80 selectively supplies electric power to the piezoelectric elements provided in each of the regions 70a and the like to selectively project one of the regions 70a and the like. Even with such a configuration, the effects of the third embodiment are not lost.

While several embodiments of the invention have been described, these embodiments have been presented by way of example and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, replacements, and modifications can be made without departing from the scope of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, as well as the scope of the invention described in the claims and equivalents thereof.

1 cutting device, 10 stage, 20 cutting unit, 60 control unit, 45 stage driving unit, 50 camera, 12 bonded wafer, CT contact mark, 12c outer peripheral portion, TFa to TFc material film, 70 pad, 80 projection mechanism

Claims (8)

a stage on which a wafer can be mounted on a mounting surface;
a blade for cutting the outer peripheral portion of the wafer toward the mounting surface,
A semiconductor manufacturing apparatus, wherein the stage includes a protruding portion provided at a position corresponding to a first region where no material film is formed on a first surface of the outer peripheral portion of the wafer that faces the mounting surface. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said projecting portion comprises a pad provided between said wafer and said stage in said first region. 3. The semiconductor manufacturing apparatus according to claim 2, wherein said pad is provided corresponding to a contact mark that was in contact with a supporting member of a film forming apparatus in said material film forming step in said outer peripheral portion. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said protrusion is integrally formed with said stage. 2. The semiconductor manufacturing apparatus according to claim 1, wherein said projecting portion is provided over the entire position of said mounting surface of said stage corresponding to said outer peripheral portion of said wafer. 3. The semiconductor manufacturing apparatus according to claim 2, wherein said pad is provided over the entire position of said mounting surface of said stage corresponding to said outer peripheral portion of said wafer. a projecting mechanism for projecting the projecting portion from the mounting surface of the stage;
a memory that stores position coordinates of the first region of the wafer;
7. The semiconductor according to any one of claims 1 to 6, further comprising a control unit that controls the protrusion mechanism so as to cause the protrusion to protrude to a position corresponding to the position coordinates of the first region. manufacturing device. A stage on which a wafer can be mounted on a mounting surface, a blade for cutting an outer peripheral portion of the wafer toward the mounting surface, and a material film on a first surface of the outer peripheral portion of the wafer facing the mounting surface. A method of manufacturing a semiconductor device using a semiconductor manufacturing apparatus comprising a protrusion provided at a position on the stage corresponding to a first region that is not formed,
placing the wafer on the stage so that the protruding portion corresponds to the first region of the wafer;
A method of manufacturing a semiconductor device, comprising cutting the outer peripheral portion of the wafer with the blade.

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