JP2022134581A - Film deposition device, method for controlling film deposition device, and method for producing electronic device - Google Patents

Abstract

To measure and control the thickness of a film with improved accuracy in a substrate deposition process.SOLUTION: A film deposition device forms a film by depositing a vapor-deposition material on a substrate. The film deposition device has: an evaporation source that releases the vapor-deposition material while moving relative to the substrate; first control means that controls the amount of the vapor-deposition material released from the evaporation source; second control means that controls the relative speed of the substrate and the evaporation source; monitoring means that measures the amount of the vapor-deposition material released from the evaporation source during the film deposition; film-thickness measuring means that measures the thickness of a film vapor-deposited on the substrate after the film deposition; and a controller that controls the first control means and the second control means on the basis of the amount of release measured by the monitoring means and the film thickness measured by the film-thickness measuring means.SELECTED DRAWING: Figure 7

Description

The present invention relates to a film forming apparatus, a film forming apparatus control method, and an electronic device manufacturing method.

2. Description of the Related Art Display devices having panel displays such as organic EL displays and liquid crystal displays are widely used. Among them, an organic EL display device including an organic EL display is excellent in characteristics such as response speed, viewing angle, and thinness, and is suitable for monitors, televisions, smart phones, displays for automobiles, and the like.

An organic EL element that constitutes an organic EL display has a basic structure in which a functional layer having a light-emitting layer, which is an organic material layer that emits light, is formed between two facing electrodes (a cathode electrode and an anode electrode). The functional layers and electrode layers of the organic EL element are formed by depositing the materials constituting each layer on the substrate through a mask. Therefore, in order for the organic EL element to exhibit desired performance, it is necessary to control the film thickness of each layer with high accuracy.

In Patent Document 1, in an organic EL manufacturing apparatus using a cluster type unit having a film forming chamber and an inspection room, a substrate formed with a film in the film forming chamber is transported to the inspection room, and an optical film thickness measuring device is provided. A configuration for measuring the film thickness is disclosed.

In Patent Document 2, in an organic EL manufacturing apparatus, a film thickness monitor having a crystal oscillator is placed in a vacuum chamber where film formation is performed, the film formation rate during deposition is measured, and the evaporation source is determined according to the measurement result. A configuration is disclosed in which the evaporation rate of the vapor deposition material is controlled by controlling the temperature of the vapor deposition material.

JP 2005-322612 A JP 2019-065391 A

However, as demand for performance of displays such as organic EL display devices increases, there is a demand for a method of measuring the film thickness more accurately and controlling the film formation in the film formation process on the substrate.

The present invention has been made in view of the above problems, and it is an object of the present invention to improve the accuracy of film thickness measurement and control in the process of forming a film on a substrate.

The present invention employs the following configurations. i.e.
A film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
an evaporation source that emits the evaporation material while moving relative to the substrate;
a first control means for controlling the amount of the vapor deposition material emitted from the vaporization source;
a second control means for controlling the relative speed of the substrate and the evaporation source;
monitoring means for measuring the amount of the deposition material emitted from the evaporation source during film formation;
a film thickness measuring means for measuring the film thickness of the film deposited on the substrate after film formation;
a controller for controlling the first control means and the second control means based on the release amount measured by the monitor means and the film thickness measured by the film thickness measurement means;
A film forming apparatus comprising:

According to the present invention, it is possible to improve the accuracy of film thickness measurement and control in the process of forming a film on a substrate.

Schematic diagram of electronic device manufacturing equipment Cross-sectional view showing the configuration of a film forming apparatus Diagram showing the configuration of the evaporation source unit Cross-sectional view showing the configuration of the pass chamber and film thickness measuring unit Block diagram showing the configuration of the film thickness measurement section FIG. 2 is a plan view showing the structure of the film formation surface side of the substrate; Block diagram showing the configuration of the film thickness control system Chart for explaining control during film formation Graph for explaining control during film formation FIG. 2 is a plan view of an electronic device manufacturing apparatus according to Embodiment 2; Diagram for explaining a method for manufacturing an electronic device

Preferred embodiments of the present invention will be described below with reference to the drawings. However, the following description merely exemplifies preferred configurations of the present invention, and the scope of the present invention is not limited to those configurations. In addition, unless otherwise specified, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. in the following description are intended to limit the scope of the present invention. do not have.

The present invention can be regarded as a film forming apparatus or film forming method for forming a film on a substrate. The present invention can also be regarded as an electronic device manufacturing apparatus or an electronic device manufacturing method using such a film forming apparatus or film forming method. The present invention can also be regarded as a control method for each of the devices described above.

INDUSTRIAL APPLICABILITY The present invention can be preferably applied when forming a thin film material layer with a desired pattern on the surface of a substrate through a mask. Any material such as glass, resin, metal, or silicon can be used as the substrate material. Any material such as an organic material or an inorganic material (metal, metal oxide) can be used as the film-forming material. The technology of the present invention is typically applied to electronic device and optical member manufacturing apparatuses. In particular, it is suitable for organic electronic devices such as an organic EL display, an organic EL display device using the same, a thin film solar cell, and an organic CMOS image sensor. However, the application target of the present invention is not limited to this.

[Example 1]
In Example 1, the overall configuration of the apparatus and the basic principle of film thickness measurement and control will be described as a basic embodiment of the present invention.

<Electronic device manufacturing equipment>
FIG. 1 is a plan view schematically showing a configuration of part of an electronic device manufacturing apparatus. The electronic device manufacturing apparatus of FIG. 1 is used, for example, to manufacture organic EL panels used in organic EL display devices for smartphones.

In the electronic device manufacturing apparatus, a plurality of cluster-type units (hereinafter also simply referred to as “units”) CU1 to CU3 are connected via connection chambers to form a manufacturing line. Each cluster type unit has a configuration in which a plurality of film formation chambers are arranged around a substrate transport robot. Note that the number of units is not limited to three. Also, the number of chambers belonging to each cluster is not limited to those described below. Also, the type and number of chambers may be different for each crust. Hereinafter, in descriptions common to all units and descriptions that do not specify a unit, reference signs written with "x" instead of numbers such as "CUx" are used, and in descriptions of individual units, "CU1" (The same applies to reference signs attached to components other than units).

FIG. 1 shows part of the film forming apparatus in the entire electronic device manufacturing apparatus. Upstream of the film forming apparatus, for example, a substrate stocker, a heating apparatus, and a pretreatment apparatus such as cleaning may be provided. A substrate stocker or the like may be provided, and an electronic device manufacturing apparatus is configured by combining them as a whole. The substrate flows along the direction of arrow F from the upstream side to the downstream side.

The cluster-type unit CUx has a central transfer chamber TRx, and a plurality of film formation chambers EVx1 to EVx4 and mask chambers MSx1 to MSx2 arranged around the transfer chamber TRx. Two adjacent units CUx and CUx+1 are connected by a connection room CNx. Each of the chambers TRx, EVx1 to EVx4, MSx1 to MSx2, and the connecting chamber CNx in the cluster type unit CUx are spatially connected, and the interior thereof is maintained in a vacuum or an inert gas atmosphere such as nitrogen gas. In this embodiment, each chamber that constitutes the unit CUx and the connection chamber CNx is connected to a vacuum pump (not shown) and can be independently evacuated. Each chamber is also called a "vacuum chamber" or simply a "chamber". In this specification, the term “vacuum” refers to a state filled with gas having a pressure lower than atmospheric pressure.

A transport robot RRx as transport means for transporting the substrate S and the mask M is provided in the transport chamber TRx. The transport robot RRx is, for example, a multi-joint robot having a structure in which a robot hand holding the substrate S and the mask M is attached to a multi-joint arm. In the cluster-type unit CUx, the substrate S is transported by transport means such as a transport robot RRx or a transport robot RCx, which will be described later, while maintaining a horizontal state in which the film-forming surface faces downward in the direction of gravity. The robot hands of the transport robot RRx and the transport robot RCx hold the peripheral area of the surface of the substrate S to be processed. The transport robot RRx transports the substrate S between the pass chamber PSx-1 on the upstream side, the film forming chambers EVx1 to EVx4, and the buffer chamber BCx on the downstream side.

Further, the transport robot RRx transports the mask M between the mask chamber MSx1 and the film forming chambers EVx1 and EVx2, and transports the mask M between the mask chamber MSx2 and the film forming chambers EVx3 and EVx4. The robot hands of the transport robot RRx and the transport robot RCx are configured to perform predetermined movements according to a predetermined program. The movement of each robot hand is set so that a plurality of substrates can be efficiently transported when film formation is performed on the plurality of substrates sequentially or simultaneously.

The mask chambers MSx1 and MSx2 are chambers provided with mask stockers that store masks M used for film formation and used masks M, respectively. Masks M used in the film formation chambers EVx1 and EVx3 are stocked in the mask chamber MSx1, and masks M used in the film formation chambers EVx2 and EVx4 are stocked in the mask chamber MSx2. In the case of deposition film formation, as the mask M, a metal mask having a large number of openings is preferably used.

The film formation chambers EVx1 to EVx4 are chambers for forming films on the surface of the substrate S (film formation surface). Here, the film forming chambers EVx1 and EVx3 have the same function (chambers capable of performing the same film forming process), and similarly, the film forming chambers EVx2 and EVx4 also have the same function. With this configuration, the film forming process in the first route of the film forming chambers EVx1→EVx2 and the film forming process in the second route of the film forming chambers EVx3→EVx4 can be performed in parallel.

The connection room CNx has a function of connecting the unit CUx and the unit CUx+1 and transferring the substrate S deposited in the unit CUx to the subsequent unit CUx+1. The connection chamber CNx of this embodiment is composed of a buffer chamber BCx, a swirl chamber TCx, and a pass chamber PSx in order from the upstream side. Such a configuration of the connection chamber CNx is preferable from the viewpoint of enhancing productivity of the film forming apparatus and enhancing usability. However, the configuration of the connection chamber CNx is not limited to this, and may be composed of only the buffer chamber BCx or the pass chamber PSx.

The buffer room BCx is a room for transferring the substrate S between the transfer robot RRx in the unit CUx and the transfer robot RCx in the connection room CNx. The buffer chamber BCx stores a plurality of substrates S when there is a difference in processing speed between the unit CUx and the subsequent unit CUx+1, or when substrates S cannot flow normally due to downstream troubles. It has a function of adjusting the carrying-in speed and the carrying-in timing of the substrate S by temporarily storing it. By providing the buffer chamber BCx having such a function in the connection chamber CNx, it is possible to realize high productivity and high flexibility to cope with lamination deposition of various layer configurations. For example, in the buffer chamber BCx, a plurality of substrates S can be accommodated while maintaining a horizontal state in which the surface to be processed of the substrates S faces downward in the direction of gravity. An elevating mechanism for elevating the substrate storage shelf is provided to align the stage for loading or unloading S with the transport position.

The turning chamber TCx is a chamber for rotating the orientation of the substrate S by 180 degrees. A transport robot RCx is provided in the turning chamber TCx for transferring the substrate S from the buffer chamber BCx to the pass chamber PSx. When the upstream end of the substrate S is called the “rear end” and the downstream end is called the “front end”, the transport robot RCx turns 180 degrees while supporting the substrate S received in the buffer chamber BCx. By delivering the substrate S to the pass chamber PSx, the front end and the rear end of the substrate S are exchanged between the buffer chamber BCx and the pass chamber PSx. As a result, the direction when the substrate S is carried into the film forming chamber is the same for the unit CUx on the upstream side and the unit CUx+1 on the downstream side. It can be matched in each unit CUx. With such a configuration, it is possible to align the directions in which the masks M are installed in the mask chambers MSx1 to MSx2 in each unit CUx, and the management of the masks M is simplified.

The pass chamber PSx is a chamber for transferring the substrate S between the transfer robot RCx in the connecting room CNx and the transfer robot RRx+1 in the downstream unit CUx+1. In this embodiment, a film thickness measuring section is arranged in the pass chamber PSx, and the film thickness of the film formed on the substrate S is measured. The alignment time in the film formation chamber may be shortened by providing an alignment mechanism in the pass chamber PSx. For example, if the same cluster-type unit includes a first film formation chamber and a second film formation chamber, the downstream buffer chamber and pass chamber include the first film formation chamber and the second film formation chamber. A substrate on which a film has been formed in is carried in in common.

Doors (for example, door valves or gate valves) that can be opened and closed are provided between the film formation chambers EVx1 to EVx4, the mask chambers MSx1 to MSx2, the transfer chamber TRx, the buffer chamber BCx, the swirl chamber TCx, and the pass chamber PSx. or a structure that is always open.

<Vacuum deposition equipment>
FIG. 2 schematically shows the configuration of the vacuum deposition apparatus 200 provided in the film forming chambers EVx1 to EVx4. The vacuum deposition apparatus 200 has a mask holder 201 holding a mask M, a substrate holder 202 holding a substrate S, an evaporation source unit 203 , a moving mechanism 204 , a film formation rate monitor 205 and a film formation controller 206 . A mask holder 201 , a substrate holder 202 , an evaporation source unit 203 , a moving mechanism 204 and a deposition rate monitor 205 are provided inside a vacuum chamber 207 . The vacuum deposition apparatus 200 moves at least one of the mask holder 201 and the substrate holder 202 to align the mask M held by the mask holder 201 and the substrate S held by the substrate holder 202 (not shown). It further has a position adjustment mechanism (alignment mechanism). The position adjustment mechanism of this embodiment adjusts the relative position of the substrate S with respect to the mask M by moving the substrate holder 202 in the XY direction and rotating the substrate holder 202 in a plane substantially parallel to the surface of the substrate S on which the film is formed.

The substrate S is placed on the upper surface of the mask M held in a horizontal state, with the film formation surface facing downward. Below the mask M, an evaporation source unit 203 is provided. The evaporation source unit 203 roughly includes a container (crucible) containing a film forming material, a heater for heating the film forming material in the container, and the like. In addition, if necessary, the evaporation source unit 203 may be provided with a reflector, a heat transfer member, a shutter, or the like for increasing the heating efficiency. The moving mechanism 204 is means for moving (scanning) the evaporation source unit 203 parallel to the surface of the substrate S to be processed. Although the single-axis moving mechanism 204 is used in this embodiment, a two-axis or more moving mechanism may be used.

Although the substrate S is placed on the upper surface of the mask M in this embodiment, the substrate S may not be placed on the upper surface of the mask M if the substrate S and the mask M are in sufficiently close contact with each other. may For example, a configuration in which the substrate S is brought into close contact with the lower surface of the mask M and the evaporation material is blown from above, or a configuration in which the closely-contacted substrate S and the mask M are arranged vertically may be used. Alternatively, a magnet unit (not shown) may be brought close to the surface of the substrate S opposite to the surface to be processed, and the mask foil of the mask M may be attracted by a magnetic force to increase the adhesion of the mask M to the substrate S. . Also, a cooling unit for cooling the substrate S may be provided, and the magnet unit may also serve as the cooling unit. Also, the evaporation source unit 203 can be configured such that a plurality of evaporation source units or containers are arranged side by side and moved as a unit. According to such a configuration, it is possible to store and evaporate different materials for each evaporation source unit or container, thereby forming a mixed film or a laminated film.

A film formation rate monitor 205 (monitor means) is a monitor means for monitoring the film formation rate of the thin film formed on the substrate S. FIG. The film formation rate monitor 205 of this embodiment is a crystal oscillation type film formation rate monitor, and has a crystal oscillator that moves together with the evaporation source unit 203. The film formation material is deposited on the surface of the crystal oscillator. A deposition rate (deposition rate) [Angstrom/s], which is the deposition amount of the deposition material per unit time, is estimated based on the amount of change in the resonance frequency (eigenfrequency) due to (given mass).

The film formation control unit 206 is control means for controlling the film thickness of the thin film formed on the substrate S to be a target value. The film formation control unit 206 corrects predetermined initial setting information according to the film formation rate [Angstrom/s] obtained by the film formation rate monitor 205 and the film thickness value measured by the film thickness measurement means. to control the film thickness. As will be described later, the contents of the control include adjustment of the scan speed of the evaporation source unit 203 by the moving mechanism 204, adjustment of the film formation time [s] as a result of the scan speed adjustment, heater temperature of the evaporation source unit 203 and shutter speed. There is control of the evaporation amount (release amount) of the vapor deposition material by adjusting the degree of opening. By combining these controls that affect the film thickness, the film formation control unit 206 achieves good film formation in consideration of quality, precision, and takt time. The film formation control unit 206 functions as first control means for controlling the amount of vapor deposition material emitted from the evaporation source and as second control means for controlling the relative speed between the substrate and the evaporation source.

FIG. 3 shows a detailed configuration example of the evaporation source unit 203 of this embodiment. FIG. 3( a ) shows how the evaporation source unit 203 performs evaporation while moving relative to the substrate S under the control of the film formation controller 206 . Evaporation source unit 203 includes a plurality of evaporation sources 208a-208c each having a plurality of nozzles. The same vapor deposition material may be stored in each of the evaporation sources 208a to 208c to improve the deposition rate, or different vapor deposition materials may be stored in each of the evaporation sources 208a to 208c to control the film material. Note that the number of evaporation sources and the number of nozzles are not limited to those shown in the figure. In addition, the number of scans may be increased or decreased from the initial set value according to the film formation rate or film thickness measurement results. Further, the method of moving the evaporation source unit 203 is not limited to reciprocating scanning, and depending on the shape of the evaporation source unit 203 and the size of the substrate S, a raster scanning method may be used.

Further, the moving mechanism 204 includes a guide rail 204a and a driving section 204b having driving means such as a motor. The driving unit 204b reciprocates the evaporation sources 208a to 208c together on the guide rail 204a at a predetermined scanning speed according to the control of the film formation control unit 206. FIG. When the film formation control unit 206 increases the scan speed of the evaporation source, the film thickness per unit time becomes thin, and when the scan speed is decreased, the film thickness per unit time increases. Since the film formation rate changes according to the relative speed between the substrate S and the evaporation source unit 203, the substrate S may be moved relative to the evaporation source unit 203 within a plane.

The vacuum deposition apparatus 200 of this embodiment also includes film formation rate monitors 205a to 205c corresponding to the respective evaporation sources 208a to 208c. With this configuration, it is possible to measure the film formation rate for each of the evaporation sources 208a to 208c, so that it is possible to perform different temperature control for each evaporation source. Also, the film formation rate values acquired by the plurality of film formation rate monitors 205a to 205c may be integrated (for example, an average value may be calculated) to uniformly temperature control the entire evaporation source unit 203. FIG. However, the number of film formation rate monitors is not limited to this, and may be one for the entire evaporation source unit 203 .

FIG. 3B shows a cross-sectional view of one evaporation source 208a included in the evaporation source unit. The evaporation source 208 a of this embodiment has a configuration in which the crucible 244 is heated by the heater 246 to release the vapor deposition material 242 to adhere to the substrate S. FIG. The crucible 244 includes a crucible body 244a in which the deposition material 242 is stored and a nozzle 244b that defines the direction in which the deposition material 242 is emitted. As the heater 246, for example, a sheathed heater that generates heat according to the current control of the film formation control unit 206 is used. When the current flowing through the sheathed heater is increased, the amount of heat generated increases, and the amount of the vapor deposition material 242 emitted increases. As a result, the thickness of the film formed per unit time is increased, and the film formation speed until the desired film thickness is reached is increased. A reflector 248 is arranged around the crucible 244 to increase thermal efficiency.

<Mechanism of pass room>
FIG. 4 is a cross-sectional view schematically showing the configuration of the pass chamber PSx. FIG. 4 corresponds to the AA section of FIG. Inside the vacuum chamber 300 of the pass chamber PSx, a substrate tray 301 for holding the substrate S transported by the transport robot RCx and a film thickness measuring unit 310 for measuring the film thickness of the substrate S are arranged. Note that the substrate tray 301 may accommodate a plurality of substrates. Further, an alignment mechanism (not shown) for aligning the substrate S may be provided in the pass chamber PSx. As a result, positional deviation of the substrate S transported through the transport chamber TRx and the turning chamber TCx due to the positional accuracy of the robot used for transport can be suppressed. As a result, the alignment time of the substrate S and the mask M can be shortened inside the film forming chamber in the subsequent unit.

Note that the film thickness measurement section 310 does not necessarily have to be arranged in all the pass chambers PSx, and the film thicknesses of a plurality of cluster-type units may be measured in one pass chamber. If the substrate does not stay in the pass chamber PSx, at least one film thickness measurement unit 310 should be arranged at the most downstream position of the manufacturing line.
Also, an inspection room for film thickness measurement may be provided instead of arranging the film thickness measurement unit 310 in the pass room PSx. Further, whether or not to arrange the film thickness measuring section 310 in the pass chamber PSx may be determined according to the contents of the processing in the cluster type unit CUx on the upstream side. For example, the film thickness measurement unit 310 is arranged when the light-emitting layer is formed in the unit CUx, the film thickness measurement unit 310 is arranged when the inter-electrode layer is formed in the unit CUx, and the unit CUx is arranged for each pixel. For example, the film thickness measurement unit 310 is arranged when using a fine mask of .

<Thickness measurement part>
Although one film thickness measurement unit 310 is shown in FIG. 4, a plurality of film thickness measurement units may be arranged. By evaluating multiple locations at once, it is possible to obtain information on film thickness variations within the substrate surface, and to collectively evaluate multiple types of films deposited in multiple deposition chambers. .

The film thickness measurement unit 310 is a sensor that optically measures the film thickness, and in this embodiment, a film thickness meter having a reflection spectroscopic optical sensor is used. The film thickness measurement section 310 is roughly composed of a film thickness evaluation unit 311 , a sensor head 312 , and an optical fiber 313 connecting the sensor head 312 and the film thickness evaluation unit 311 . The sensor head 312 is positioned below the substrate tray 301 within the vacuum chamber 300 and is connected to an optical fiber 313 via a vacuum flange 314 attached to the bottom surface of the vacuum chamber 300 . The sensor head 312 has a function of setting the irradiation area of the light guided through the optical fiber 313 to a predetermined area, and can use optical components such as optical fibers and pinholes and lenses.

FIG. 5 is a block diagram of the film thickness measuring section 310. As shown in FIG. The film thickness evaluation unit 311 has a light source 320 , a spectroscope 321 and a measurement controller 322 . A light source 320 is a device that outputs measurement light, and for example, a deuterium lamp, a xenon lamp, a halogen lamp, or the like is used. The wavelength of light can be in the range from 200 nm to 1 μm. The spectroscope 321 is a device that disperses the reflected light input from the sensor head 312 and measures the spectrum (intensity for each wavelength). be done. The measurement control unit 322 is a device that controls the light source 320 and calculates the film thickness based on the reflection spectrum.

The measurement light output from the light source 320 is guided to the sensor head 312 via the optical fiber 313 and projected onto the substrate S from the sensor head 312 . Light reflected by the substrate S is input from the sensor head 312 to the spectroscope 321 via the optical fiber 313 . At this time, the light reflected by the surface of the thin film on the substrate S and the light reflected by the interface between the thin film and its underlying layer interfere with each other. By being affected by interference and absorption by the thin film in this way, the reflection spectrum is affected by the optical path length difference, that is, by the film thickness. By analyzing this reflection spectrum with the measurement control unit 322, the film thickness of the thin film can be measured.

The film thickness evaluation of the above reflection spectroscopy method is capable of evaluating organic films with a thickness of several nanometers to several hundreds of nanometers in a short time with high accuracy. This is a preferred method for evaluating Here, materials for the organic layer include αNPD: a hole-transporting material such as α-naphthylphenylbiphenyldiamine, Ir(ppy)3: a light-emitting material such as an iridium-phenylpyrimidine complex, and Alq3: tris(8-quinolinolato)aluminum. and Liq: 8-hydroxyquinolinolato-lithium). Furthermore, it may be applied to mixed films of the above organic materials. Since the spectroscopic interferometer does not require a motor, it is easy to use in a vapor deposition apparatus that requires a high degree of vacuum, and has the advantage of being able to measure near the substrate. However, the film thickness measurement unit 310 is not limited to this, and may be an ellipsometer or the like.

FIG. 6 shows a configuration example of the film formation surface side of the substrate S for facilitating the measurement by the film thickness measurement unit 310 . An area in which a plurality of display panels 340 are formed is provided in the central portion of the substrate S in this example, and a plurality of panels are manufactured by cutting the substrate S after the film formation is completed. A film thickness measurement area 330 is provided in an area in front of the transport direction (arrow F) of the substrate S, which does not overlap with the display panel 340 area. During the film forming process in each film forming chamber, the film is formed at a predetermined position in the film thickness measurement area 330 in parallel with the film formation on the display panel 340 portion. A thin film for film thickness measurement (hereinafter referred to as a patch for measurement 331, and may also be referred to as a piece for measurement or an organic film for evaluation) is formed inside. This can be realized by forming an opening for the measurement patch 331 in advance in the mask M used in each film forming chamber.

The film thickness measurement area 330 is set to have an area in which a plurality of measurement patches 331 can be formed. That is, to measure the film thickness of a film formed in one film formation chamber (either a single film or a laminated film in which a plurality of films are laminated), one If you want to form only a film (single film or laminated film) formed in one film forming chamber and measure the film thickness of the laminated film formed through a plurality of film forming chambers, the measurement patch 331 part Also, it is preferable to deposit the same laminated film as the laminated film to be measured. By using different measurement patches 331 for each layer to be measured in this manner, accurate measurement of film thickness can be realized. In order to form such a measurement patch 331, the position of the opening of the mask M should be changed for each film forming chamber.

<Film thickness measurement method>
In this embodiment, the film formation rate is acquired by the film formation rate monitor 205 provided in the vacuum deposition apparatus 200 of each film formation chamber, and the film thickness is measured by the film thickness measurement unit 310 arranged in the pass chamber PSx.

The film formation rate monitor 205 is arranged inside the vacuum deposition apparatus 200, and receives the film formation material at the same time as the substrate S, so that the film thickness of the substrate can be estimated in real time. Therefore, real-time film thickness control can be executed by reflecting the short-time information in the target rate. On the other hand, the film formation rate monitor 205 does not directly measure the thickness of the film formed on the substrate S, but indirectly measures the film formation rate using a crystal oscillator arranged at a position different from the substrate S. Measure. Therefore, due to various error factors such as the amount of material deposited on the crystal oscillator and the temperature of the crystal oscillator, the thickness of the film deposited on the crystal oscillator of the deposition rate monitor 205 and the thickness of the film deposited on the substrate S may vary. The thickness may differ, or an error may occur in the measurement value itself of the film formation rate monitor 205 . Although deterioration in accuracy can be suppressed by periodically exchanging or calibrating the crystal oscillator, the film thickness may vary due to an error in film thickness measurement by the film formation rate monitor 205 .

The film thickness measuring unit 310 is arranged in the pass chamber PSx to which the substrate S on which the film formation in the film formation chamber EVx1→EVx2 or the film formation chamber EVx3→the film formation chamber EVx4 is completed is transferred by the transfer robot RC1. . The film thickness measurement unit 310 measures the film thickness formed in the film formation chamber EVx1 (EVx3), the film thickness formed in the film formation chamber EVx2 (EVx4), or The total thickness of films deposited in the deposition chambers EVx1 and EVx2 (EVx3 and EVx4) is measured. That is, since the film thickness measurement unit 310 can directly measure the thickness of the thin film, the measurement accuracy is relatively high.

FIG. 7 is a block diagram schematically showing the configuration of the film thickness control system. The film thickness control unit 350 transmits a control command to the film formation control unit 206 of each film formation chamber based on the measurement results of the film formation rate monitor 205 and the film thickness measurement unit 310 . The film formation rate information measured by the film formation rate monitor 205 can be used for real-time control of the film thickness within the vacuum chamber 207 in which the film formation rate monitor 205 is arranged. The film thickness controller 350 functions as a controller that controls the film formation controller 206 .

Also, the film thickness information measured by the film thickness measuring unit 310 can be used for feedback control. In the feedback control, the film thickness control unit 350 controls the film formation conditions of the film formation chamber upstream of the film thickness measurement unit 310 in the substrate transport direction (arrow F), thereby controlling the film thickness of the subsequent substrate Ss. is a control that adjusts The film thickness control section 350 may perform either one of the real-time control and the feedback control, or may perform both controls. Also, the control method may be different for each film forming chamber or each unit.

FIG. 8 is a chart showing an example of processing at each timing after the start of manufacturing. Using this figure, the timing at which the measurement results of the film formation rate monitor 205 and the film thickness measurement unit 310 are applied to the film formation control will be described.

In the drawing, the upper row indicates the numbers (S1, S2, S3, . . . ) of the substrates on which the first film is deposited in the deposition chamber EV11. An interval time (I) for exchanging substrates or the like is provided between the processing of each substrate. The middle row shows the chamber in which the first substrate S1 resides and the details of the processing that the substrate S1 undergoes in that chamber. For convenience, the deposition time of the first layer, the deposition time of the second layer, the buffer time, and the measurement time in the pass chamber are each the same length, and the substrate S1 is moved during the transfer time (M). Shall move between chambers. Also, the interval time (I) and the moving time (M) are assumed to be the same length.

In the figure, the lower part shows information used by the film formation control unit 206 for film thickness control of the first layer in the film formation chamber EV11. The numbers “AX1, AX2, AX3, . It means the film formation rate of the second time. The film formation control unit 206 uses the film formation rate measured in the film formation chamber EV11 in real time for film thickness control. Further, the number "TX" represents the result of measuring the film thickness of the first layer formed on the substrate SX by the film thickness measuring unit 310, and for example, the number "T1" means the film thickness of the substrate S1. . Since the film thickness cannot be measured until after the film formation on the substrate is completed and the film is moved to the pass chamber PS1, a time lag occurs between the film formation and the film thickness measurement. The film thickness measurement unit 310 in the illustrated example cannot measure the film thickness of the substrate SX until after time t41. Therefore, the film formation control unit 206 can use the film thickness T1 of the substrate S1 after the film formation of the fifth substrate S5.

After the start of manufacturing (time t=0), the substrate S1 is carried into the deposition chamber EV11 at time t11, and deposition of the first film is started. At the same time, the film formation rate monitor 205 also starts measurement, and the film formation rate is measured sequentially from time t11 to t13. The film formation control unit 206 performs real-time control using the obtained film formation rate. For the sake of convenience, the film formation rate was measured three times for one substrate, but the number of times of measurement and the measurement period can be set arbitrarily. On the other hand, the film formation control unit 206 uses the measurement result of the substrate (substrate S-3) four substrates before the substrate S1 for the film thickness information. Thereafter, the same processing is repeated each time the substrate S is replaced.

<Film thickness control method>
The film thickness control unit 350 and the film formation control unit 206 control the scan speed of the evaporation source unit 203 and the evaporation rate of the vapor deposition material from the evaporation source unit 203, thereby controlling the film thickness of the thin film formed on the substrate S. Control. The film formation control unit 206 changes the scanning speed of the evaporation source unit 203 by controlling the driving unit 204b of the moving mechanism 204. FIG. The scan speed control has fast responsiveness and fine adjustment is possible. However, if the film thickness is controlled only by the scanning speed, there is a problem that the tact time becomes longer when the scanning speed is slowed down.

Further, the film thickness control unit 350 and the film formation control unit 206 control the current flowing through the heater 246 to change the temperature of the heater 246, thereby controlling the evaporation rate of the vapor deposition material. However, the temperature control of the heater 246 is slow in response, and there is a time lag between when the current is controlled and when the temperature actually changes. Also, if the control amount of the current is increased in order to hasten the temperature change, overshoot and undershoot are likely to occur.

As described above, the film thickness measurement using the film formation rate monitor 205 and the film thickness measurement unit 310 has their own characteristics. In addition, while the film thickness measuring unit 310 has relatively high accuracy, it does not have real-time capability because the film thickness is measured after the completion of the film formation. Regarding film thickness control, the heater temperature control and scan speed control of the evaporation source unit 203 each have their own characteristics. Although the emission amount of the vapor deposition material itself can be changed, the responsiveness is slow.

Therefore, in this embodiment, in film thickness measurement, measurement by the film formation rate monitor 205 and measurement by the film thickness measurement unit 310 are combined, and also in film thickness control, scan speed control and heater temperature control are combined to improve efficiency. Enables film thickness control. Film thickness control according to the combination of the measurement method and the control method will be described in order. Table 1 is a legend for parameters used in the following description. Here, the "target" is a target value of control. For example, if Ttarget=100, the target value is a film thickness of 100 [angstroms]. The film formation control unit performs control so that the target is within an allowable error range.

例えばTtarget=100［オングストローム］、Tmeasure=150［オングストローム］である
場合、膜厚が目標値を超えているためスキャン速度を速くする必要がある。そこで、スキャン速度が1/K₁倍、すなわち1.5倍となるように駆動部２０４ｂを制御すればよい。 (1) Scanning Speed Control Based on Film Thickness Feedback control that reflects the film thickness information measured by the film thickness measuring unit 310 on the scanning speed will be described. Formula ( ₁ ) is a formula for calculating the target value (Vscan_target) of the scan speed in the deposition chamber based on the current scan speed (Vscan_now) and the correction coefficient K1. Here, as shown in equation (2), the correction factor K1 is the ratio of the measured film thickness ( _Tmeasure ) to the target film thickness (Ttarget).

For example, when Ttarget=100 [Angstroms] and Tmeasure=150 [Angstroms], the film thickness exceeds the target value, so it is necessary to increase the scanning speed. Therefore, the driving unit 204b should be controlled so that the scanning speed becomes 1/K ₁ times, that is, 1.5 times.

It should be noted that the film thickness information is reflected in a plurality of substrates subsequent to the substrate to be measured. Therefore, if there is a change in the conditions inside the deposition chamber, there is a possibility that the target value of the film thickness cannot be achieved with the scan speed obtained by the formula (1). In that case, the scan speed obtained by equation (1) may be further corrected. For example, if the film thickness of a plurality of consecutive substrates changes uniformly (the film thickness gradually increases or decreases), extrapolation processing that takes into account the tendency is performed and the measured film thickness (Tmeasure) is corrected. , to the equation (1).

例えばAtarget=1［オングストローム/s］、Ameasure=0.8［オングストローム/s］であ
る場合、膜厚が目標値に満たないため、スキャン速度を遅くする必要がある。そこで、スキャン速度が1/K₂倍、すなわち0.8倍となるように駆動部２０４ｂを制御し、単位面積あ
たりの蒸着材料の放出量を増やせばよい。 (2) Scanning speed control based on actual rate Real-time control that reflects the actual rate measured by the film formation rate monitor 205 to the scanning speed will be described. Formula (3) is a formula for calculating the target value (Vscan_target) of the scan speed in the deposition chamber based on the current scan speed ( _{Vscan_now} ) and the correction coefficient K2. Here, as shown in equation (4), the correction factor K2 is the ratio of the measured deposition rate ( _Ameasure ) and the target deposition rate (Atarget).

For example, when Atarget=1 [Angstrom/s] and Ameasure=0.8 [Angstrom/s], the film thickness is below the target value, so the scanning speed needs to be slowed down. Therefore, the driving unit 204b should be controlled so that the scan speed is 1/K _twice , ie, 0.8 times, and the amount of vapor deposition material emitted per unit area is increased.

Since the vapor deposition rate can be measured any number of times during film formation as described above, it is possible to correct the scan speed using equation (3) in real time. For example, when the evaporation source unit 203 reciprocates within the chamber multiple times during film formation on one substrate, the scanning speed may be changed for each reciprocation or for each one-way trip.

(3) Scanning speed control based on film thickness and actual rate Control that reflects both the film thickness and the actual rate in the scanning speed will be described. Formula (5) is a formula for calculating the target value (Vscan_target) of the scan speed in the deposition chamber based on the current scan speed ( _{Vscan_now} ) and the correction coefficient K3. Also, the formula (6) is a correction coefficient K ₃
is the ratio of the measured film thickness (Tmeasure) to the target film thickness (Ttarget) (i.e. the correction factor K ₁ ) and the measured deposition rate (Ameasure) to the target deposition rate (Atarget)
(that is, the correction coefficient K ₂ ) and a weighted average calculation using the ratio of . In Equation (6), α and β represent the weights of the weighted average, and are values set by the user or the like. With such a weighting process, it is possible to change the ratio between the degree of contribution of the emission amount of the vapor deposition material and the degree of contribution of the deposited film thickness in the scan speed control. Controlling the ratio of such contributions is also feasible in deposition rate control.

As described above, during film formation on _one substrate, the correction coefficient K1 related to the film thickness is constant, but the correction coefficient K2 related to the actual rate is controlled in real _time . Therefore, real-time control can be implemented by reflecting the actual rate measurement result even in the control using equation (5).

In equation (5), the scan speed was calculated by considering the film thickness and the actual rate equally, but based on the scan speed based on the film thickness calculated according to equation (1), the actual rate measurement result (Ameasure ) may be performed. In that case, for example, correction can be made using the ratio or difference between the average value of the past multiple actual rate measurement results and the previous actual rate measurement result. Thereby, even when the actual rate changes in a certain direction due to the influence of heating of the evaporation source unit 203, desired film forming conditions can be maintained.

例えばTtarget=100［オングストローム］、Tmeasure=150［オングストローム］である
場合、膜厚が目標値を超えているため蒸着レートを下げる必要がある。そこで、リアルタイム制御において実レート（Anow）がK₁≒0.67倍となるようにヒータ温度を下げる等の制御を行えばよい。 (4) Deposition rate control based on film thickness Feedback control that reflects the film thickness information measured by the film thickness measurement unit 310 on the deposition rate will be described. Formula (7) is a formula for calculating the target value ( _Atarget ) of the deposition rate in the film forming chamber based on the actual rate (Anow) and the correction coefficient K1. _The correction coefficient K1 is calculated by the above equation (2).

For example, when Ttarget=100 [Angstroms] and Tmeasure=150 [Angstroms], the film thickness exceeds the target value, so it is necessary to lower the deposition rate. Therefore, in real-time control, control such as lowering the heater temperature may be performed so that the actual rate (Anow) becomes K ₁ ≈0.67 times.

The film formation control unit 206 of this embodiment changes the temperature of the heater 246 by controlling the current flowing through the heater 246 of the evaporation source unit 203 . As a result, the amount of deposition material 242 emitted increases (or decreases) and the deposition rate increases (or decreases). The extent to which current control should be performed to achieve a desired evaporation rate varies depending on the characteristics of the evaporation source unit 203 and the conditions inside the film forming chamber. Therefore, the film formation control unit 206 may store a table or mathematical expression representing the relationship between the current control amount and the vapor deposition rate change in a memory, and refer to it to perform control.

The vapor deposition rate can also be changed by providing an openable and closable shutter in the inner space or opening of the crucible or outside the crucible and changing the degree of opening of the shutter. Therefore, also in this embodiment, instead of controlling the temperature of the heater 246, or in addition to controlling the temperature of the heater 246, the vapor deposition rate may be changed by changing the degree of opening of the shutter.

It should be noted that the film thickness information is reflected on a plurality of substrates after the substrate to be measured. Therefore, if there is a change in the conditions inside the deposition chamber, there is a possibility that the target value of the film thickness cannot be achieved with the deposition rate obtained by the equation (7). In that case, the vapor deposition rate obtained by Equation (7) may be further corrected.

(5) Deposition rate control based on actual rate Controlling the deposition rate using the actual rate measured by the deposition rate monitor 205 is a process generally performed in a deposition apparatus such as this embodiment. Therefore, the film formation control unit 206 changes the heater temperature to increase or decrease the emission amount so that the measured deposition rate (Ameasure) approaches the target deposition rate (Atarget). This processing can be executed in real time, and control may be performed for each measurement of the film formation rate monitor 205, for example.

例えばTtarget=100［オングストローム］、Tmeasure=80［オングストローム］、すなわち、K₁=1.25である場合、膜厚が目標値に満たないため蒸着レートを上げる必要がある。
そこで、表示レート（Ameasure）が1.25倍となるようにヒータ温度等を制御すればよい。 (6) Deposition rate control based on film thickness and actual rate Control that reflects both the film thickness and the actual rate in the deposition rate will be described. Equation (8) is
Formula for realizing the target deposition rate (Atarget) by controlling the display rate (Ameasure) in the deposition chamber using "Tratget/ _Tmeasure " as in formula (2) as the correction coefficient K1 for the film thickness. is.

For example, when Ttarget=100 [Angstroms] and Tmeasure=80 [Angstroms], that is, when K ₁ =1.25, the film thickness is below the target value and the deposition rate needs to be increased.
Therefore, the heater temperature and the like should be controlled so that the display rate (Ameasure) becomes 1.25 times.

In the above (1) to (3), the scanning speed was controlled, and in (4) to (6), the deposition rate was controlled by changing the heater temperature. As described above, the scan speed control and the deposition rate accuracy each have their own characteristics in terms of responsiveness to control, influence on tact time, and the like, so it is preferable to control them by appropriately combining them.

FIG. 9 is a conceptual graph for explaining an example of control for improving efficiency and accuracy. FIG. 9A shows a conventional example in which control during film formation is performed only by changing the heater temperature. In this example, after the film formation process of the substrate S is started at time t0, the film formation control unit 206 determines that the deposition rate needs to be increased based on the Ameasure value at time t1, and raises the heater temperature. is increasing the current. However, since the responsiveness to control is slow, a time lag (W1) occurs until the target deposition rate is reached. Furthermore, an overshoot may occur after reaching the target (W2). Also, if the current flowing through the heater is reduced in order to cancel the overshoot, undershoot may occur (W3). Furthermore, hunting may occur. On the other hand, if the heater temperature is gradually changed in order to reduce the amount of overshoot, the time until the temperature rises becomes long, and the tact time may deteriorate.

FIG. 9(b) shows an example in which scan speed control is combined with vapor deposition rate control by changing the heater temperature in order to compensate for the slow response of heater temperature control. In this example, after starting the film forming process on the substrate S at time t0, the film forming control unit determines that the deposition rate needs to be increased based on the Ameasure value at time t3, and raises the heater temperature. Increase current. However, in order not to cause the overshoot described above, the temperature rise curve is moderated (see solid line graph and left vertical axis). Furthermore, the film formation control unit reduces the scanning speed in order to compensate for the lengthening of the time required for the temperature rise (see the dashed-dotted line graph and the vertical axis on the right). Then, when it is determined that the vapor deposition rate has sufficiently approached the target value (W4), the scanning speed is restored. Therefore, overshoot and hunting can be suppressed.

[Example 2]
Here, an example of film thickness control for an electronic device manufacturing apparatus that is not a cluster type will be described. FIG. 10 shows an electronic device manufacturing apparatus according to the present embodiment, which is an in-line type apparatus in which film formation is performed while transporting the substrate S and the mask M which are aligned and brought into close contact with each other.

The manufacturing apparatus 250 includes a mask carrying-in chamber 90, an alignment chamber 100 (mask mounting chamber), a plurality of film formation chambers 110a and 110b, reversing chambers 111a and 111b, a transfer chamber 112, a mask separation chamber 113, and a substrate. It has a separation chamber 114 , a carrier transfer chamber 115 , a mask transfer chamber 116 , a substrate loading chamber 117 (substrate mounting chamber), and a film thickness measurement chamber 118 . The substrate S held by the substrate carrier 9 is transported within each chamber along the path indicated by the dashed line, and the mask M is transported along the path indicated by the dotted line.

That is, the substrate S held by the substrate carrier 9 in the substrate carrying-in chamber 117 and carried in the path indicated by the dashed line is reversed in posture by the reversing mechanism 120 a in the reversing chamber 111 a and mounted on the mask M in the mask carrying-in chamber 90 . Next, after the substrate S and the mask M are aligned and brought into close contact with each other in the alignment chamber 100, the vapor deposition material discharged from the evaporation source unit 203 provided in the film formation chambers while being transported through the film formation chambers 110a and 110b Receive film formation. A deposition rate monitor 205 is attached to the substrate carrier. Therefore, the released vapor deposition material adheres to the film forming surface of the substrate S and also to the film forming rate monitor 205 . Thereby, the film formation rate during film formation is measured. A film thickness measuring unit 310 for optically measuring a film thickness is arranged in a film thickness measuring chamber 118 provided in the middle of the film forming chambers 110a and 110b, and the substrate carrier 9 is temporarily stopped. to measure the thickness of the thin film after deposition in the deposition chamber 110a.

Subsequently, the substrate S held by the substrate carrier is loaded into the transfer chamber 112 . A film thickness measuring unit 310 is also arranged in the transfer chamber 112, and measures the thickness of the thin film after film formation in the film forming chamber 110b. Next, after separating the mask M in the mask separation chamber 113, the substrate S is reversed in posture by the reversing mechanism 120b in the reversing chamber 111b, separated from the substrate carrier 9 in the substrate separation chamber 114, and carried out of the manufacturing apparatus. On the other hand, the substrate carrier 9 is transferred to the substrate loading chamber 117 via the carrier transfer chamber 115 and holds the next substrate S thereon.

The manufacturing apparatus also includes a film thickness control unit 350 and a film formation control unit 206 (not shown). In the manufacturing apparatus having the configuration of this embodiment, the film formation rate monitor 205 mounted on the substrate carrier 9 measures the film formation rate during film formation, and the film thickness measurement unit 310 optically measures the film thickness after film formation. to measure. Then, the film thickness control unit 350 and the film formation control unit 206 adjust the transport speed of the substrate carrier 9 using the measurement results of the film formation rate and the film thickness. By controlling the relative speed of the substrate S and the current supplied to the evaporation source unit 203, the evaporation amount of the evaporation material is controlled. Therefore, it is possible to control the film thickness with high accuracy based on the same principle as in the above embodiment.

[Example 3]
(Method for producing organic electronic device)
In this embodiment, an example of a method for manufacturing an organic electronic device using a film forming apparatus will be described. Hereinafter, as an example of the organic electronic device, the structure and manufacturing method of an organic EL display device will be illustrated. First, the organic EL display device to be manufactured will be described. FIG. 11(a) shows an overall view of the organic EL display device 60, and FIG. 11(b) shows a cross-sectional structure of one pixel.

As shown in FIG. 11A, in a display region 61 of an organic EL display device 60, a plurality of pixels 62 each having a plurality of light emitting elements are arranged in a matrix. Each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. The term "pixel" as used herein refers to a minimum unit capable of displaying a desired color in the display area 61. FIG. In the case of the organic EL display device of this figure, the pixel 62 is configured by a combination of a first light emitting element 62R, a second light emitting element 62G, and a third light emitting element 62B that emit light different from each other. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element and a white light emitting element. It is not limited.

FIG. 11(b) is a schematic partial cross-sectional view taken along line AB in FIG. 11(a). The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on the substrate 10. and an organic EL element. Among these layers, the hole transport layer 65, the light emitting layers 66R, 66G and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue.

The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red, green, and blue, respectively. Also, the first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 to prevent short-circuiting between the first electrodes 64 and the second electrodes 68 due to foreign matter. Furthermore, since the organic EL layer is deteriorated by moisture and oxygen, a protective layer P is provided to protect the organic EL element from moisture and oxygen.

Next, an example of a method for manufacturing an organic EL display device as an electronic device will be specifically described. First, the substrate 10 on which the circuit (not shown) for driving the organic EL display device and the first electrode 64 are formed is prepared.

Next, an acrylic resin is formed by spin coating on the substrate 10 on which the first electrode 64 is formed, and the acrylic resin is patterned by lithography so that an opening is formed in the portion where the first electrode 64 is formed. and an insulating layer 69 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.

Next, the substrate 10 on which the insulating layer 69 is patterned is carried into the first film forming apparatus, the substrate is supported by the substrate support unit, and the hole transport layer 65 is formed on the first electrode 64 in the display area. It is deposited as a common layer. The hole transport layer 65 is deposited by vacuum deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display area 61, a high-definition mask is not required. Here, the film formation apparatus used in the film formation in this step and the film formation of each layer below is the film formation apparatus described in any of the above embodiments.

Next, the substrate 10 on which the holes up to the hole transport layer 65 are formed is carried into the second film forming apparatus and supported by the substrate supporting unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R emitting red is formed on the portion of the substrate 10 where the element emitting red is to be arranged. According to this example, the mask and the substrate can be satisfactorily overlapped, and highly accurate film formation can be performed.

Similarly to the deposition of the light emitting layer 66R, a green light emitting layer 66G is deposited by the third deposition apparatus, and a blue light emitting layer 66B is deposited by the fourth deposition apparatus. After the formation of the light-emitting layers 66R, 66G, and 66B is completed, the electron transport layer 67 is formed over the entire display area 61 by the fifth film forming apparatus. The electron transport layer 67 is formed as a layer common to the three color light-emitting layers 66R, 66G, and 66B.

The substrate on which the electron transport layer 67 has been formed is transferred to a sputtering apparatus, a second electrode 68 is formed thereon, and then transferred to a plasma CVD apparatus to form a protective layer P, whereby the organic EL display device 60 is completed. do.

If the substrate 10 on which the insulating layer 69 is patterned is carried into the film-forming apparatus and is exposed to an atmosphere containing moisture and oxygen until the film-forming of the protective layer P is completed, the light-emitting layer made of the organic EL material will be damaged. It may deteriorate due to moisture and oxygen. Therefore, in this example, substrates are carried in and out between film forming apparatuses under a vacuum atmosphere or an inert gas atmosphere.

The film thickness measurement method and the film formation control method using the film thickness according to the present invention can be suitably used in forming each of the above layers including the light emitting layer. As a result, it is possible to achieve good film formation control with improved accuracy in film thickness measurement and control in the film formation process on the substrate. Therefore, it is possible to satisfactorily implement an electronic device manufacturing method including the step of forming an organic material film on a substrate and the step of forming an electrode member on the substrate.

203: Evaporation source unit, 205: Film formation rate monitor, 206: Film formation control unit, 208: Evaporation source, 310: Film thickness measurement unit

Claims (18)

A film forming apparatus for forming a film by evaporating a vapor deposition material on a substrate,
an evaporation source that emits the evaporation material while moving relative to the substrate;
a first control means for controlling the amount of the vapor deposition material emitted from the vaporization source;
a second control means for controlling the relative speed of the substrate and the evaporation source;
monitoring means for measuring the amount of the deposition material emitted from the evaporation source during film formation;
a film thickness measuring means for measuring the film thickness of the film deposited on the substrate after film formation;
a controller for controlling the first control means and the second control means based on the release amount measured by the monitor means and the film thickness measured by the film thickness measurement means;
A film forming apparatus comprising: The control unit performs real-time control in which the release amount measured for the substrate during film formation by the monitor means is applied to control during film formation on the substrate during film formation,
2. The control unit performs feedback control in which the film thickness measured by the film thickness measuring means is applied to control during film formation on a substrate subsequent to the substrate to be measured. The film forming apparatus according to . 2. The control unit controls the first control means and the second control means so that the film thickness measured by the film thickness measurement means approaches a target value. 3. The film forming apparatus according to 2. When the film thickness measured by the film thickness measuring means is less than the target value, the first control means performs control to increase the emission amount of the vapor deposition material,
4. When the film thickness measured by the film thickness measuring means exceeds a target value, the first control means performs control to reduce the emission amount of the vapor deposition material. The film-forming apparatus of any one of 1 item|term. When the film thickness measured by the film thickness measuring means is less than the target value, the second control means performs control to slow down the relative speed,
5. The method according to any one of claims 1 to 4, wherein when the film thickness measured by the film thickness measuring means exceeds a target value, the second control means increases the relative speed. The film forming apparatus according to item 1. 6. The control unit controls the first control means and the second control means so that the release amount measured by the monitor means approaches a target value. The film-forming apparatus of any one of 1 item|term. When the release amount measured by the monitor means is less than the target value, the first control means performs control to increase the release amount of the vapor deposition material,
When the release amount measured by the monitor means exceeds a target value, the control unit controls the first control means such that the first control means reduces the release amount of the vapor deposition material. ,
7. The film forming apparatus according to any one of claims 1 to 6, characterized in that: When the release amount measured by the monitoring means is less than the target value, the second control means performs control to slow down the relative speed,
8. The film forming apparatus according to any one of claims 1 to 7, wherein control is performed to increase the relative speed when the release amount measured by the monitor means exceeds a target value. 2. The controller controls the first control means based on the emission amount measured by the monitor means and the film thickness measured by the film thickness measurement means. 8. The film forming apparatus according to any one of 7. 2. The controller controls the second control means based on the emission amount measured by the monitor means and the film thickness measured by the film thickness measurement means. 8. The film forming apparatus according to any one of 7. 11. The film forming apparatus according to claim 9, wherein the control unit changes the ratio between the contribution of the measured release amount and the contribution of the measured film thickness. 12. The film forming apparatus according to any one of claims 1 to 11, wherein said monitoring means includes a film forming rate monitor having a crystal oscillator. 13. The film forming apparatus according to claim 1, wherein said film thickness measuring means includes a sensor for optically measuring the film thickness of the film formed on said substrate. a film formation chamber in which the monitor means is arranged;
A chamber in which the film thickness measuring means is arranged,
In the deposition chamber, the substrate during deposition is measured by the monitoring means,
14. The method according to any one of claims 1 to 13, wherein the substrate after film formation is loaded into the chamber, and the loaded substrate is subjected to measurement by the film thickness measuring means. Deposition equipment. The film forming chamber constitutes a cluster type unit together with the second film forming chamber,
15. The film forming apparatus according to claim 14, wherein the substrate after film formation is commonly carried into the chamber from the cluster type unit. further comprising a substrate carrier that holds the substrate;
The film formation chamber is an in-line film formation chamber in which film formation is performed while the substrate is transported together with the substrate carrier,
The substrate carrier after film formation on the substrate in the film formation chamber is carried into the chamber,
15. The film forming apparatus according to claim 14, wherein said substrate carrier comprises said monitoring means, and measures the release amount of said vapor deposition material during film formation in said film forming chamber. A control method for a film forming apparatus comprising: an evaporation source that emits a vapor deposition material while moving relative to a substrate to form a film on the substrate; a monitoring means; and a film thickness measuring means,
measuring the amount of the vapor deposition material emitted from the evaporation source by the monitoring means during film formation;
measuring the film thickness of the film deposited on the substrate by the film thickness measuring means after film formation;
Based on the emission amount measured by the monitoring means and the film thickness measured by the film thickness measuring means, the emission amount of the vapor deposition material from the evaporation source and the relative velocity between the substrate and the evaporation source are calculated. and
A control method for a film forming apparatus, comprising: depositing an organic material on the substrate using the control method according to claim 17;
forming an electrode member on the substrate;
A method of manufacturing an electronic device, comprising:

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