JP2022127287A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000017525 heat dissipation Effects 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000003566 sealing material Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体装置を示す断面図である。放熱金属板1の一部が薄化されて、放熱金属板1の上面の中央部に凹部2が設けられている。絶縁基板3が凹部2の底面に設けられている。
図3は、実施の形態2に係る半導体モジュールの内部を示す平面図である。図4は、実施の形態2に係る半導体モジュールを示す断面図である。図4は図3のI-IIに沿った断面図である。
図5は、実施の形態3に係る半導体モジュールを示す断面図である。ケース10の下面に突起18が設けられている。放熱金属板1の上面の外周部に窪み19が設けられている。この放熱金属板1の窪み19にケース10の突起18が挿入される。これにより、放熱金属板1とケース10の接合面積が広がるため、両者の密着性が向上する。従って、放熱金属板1とケース10の間からの封止材14の漏れ又は滲みを抑制することができ、モジュールの生産性が向上する。
図6は、実施の形態4に係る半導体モジュールを示す断面図である。ケース10は、凹部2の上方にせり出したオーバーハング部20を有する。オーバーハング部20は、ケース10のテーパー16の上方にせり出しているが、これ限らず更に内側にせり出してもよい。ケース電極11はオーバーハング部20の上に設けられている。
図7は、実施の形態5に係る半導体モジュールを示す断面図である。放熱金属板1の下面から外周部の上面までの高さh1は、放熱金属板1の下面から半導体素子8の上面までの高さh2よりも高い(h1>h2)。これにより、半導体素子8の上面からケース電極11までの距離を十分に確保できる。従って、絶縁基板3を放熱金属板1の凹部2の側面に近づけることができ、放熱金属板1の凹部2の有効面積を最大限に活用することができるため、低背化モジュールの高密度化を実現できる。
図8は、実施の形態6に係る半導体モジュールの内部を示す平面図である。ケース電極11は、主電極11a,11bと信号電極11cを有する。放熱金属板1のテーパー16は、ケース電極11の先端部の真下と絶縁基板3の間に局所的に設けられ、凹部2の側壁のその他の部分には設けられていない。これにより、放熱金属板1のテーパー16の加工数を減らすことができるため、モジュールの生産性が向上する。
Claims (8)
- 上面に凹部を有する放熱金属板と、
前記凹部の底面に設けられ、回路パターンを有する絶縁基板と、
前記絶縁基板の上に設けられ、前記回路パターンに接続された半導体素子と、
前記放熱金属板の前記上面の外周部に接合され前記絶縁基板と前記半導体素子を囲むケースと、
前記ケースに設けられたケース電極と、
前記ケース電極と前記半導体素子を接続するワイヤと、
前記ケースの内部に設けられ、前記絶縁基板と前記半導体素子と前記ワイヤを封止する封止材とを備え、
前記凹部の側壁はテーパーを有することを特徴とする半導体モジュール。 - 前記放熱金属板は、前記凹部の前記底面から上方に突出した突起部を有することを特徴とする請求項1に記載の半導体モジュール。
- 前記ケースの下面に突起が設けられ、
前記放熱金属板の前記上面の前記外周部に、前記突起が挿入される窪みが設けられていることを特徴とする請求項1又は2に記載の半導体モジュール。 - 前記ケースは、前記凹部の上方にせり出したオーバーハング部を有し、
前記ケース電極は前記オーバーハング部の上に設けられていることを特徴とする請求項1~3の何れか1項に記載の半導体モジュール。 - 前記オーバーハング部の下面はテーパー状であることを特徴とする請求項4に記載の半導体モジュール。
- 前記放熱金属板の下面から前記外周部の上面までの高さは、前記放熱金属板の前記下面から前記半導体素子の上面までの高さよりも高いことを特徴とする請求項1~5の何れか1項に記載の半導体モジュール。
- 前記放熱金属板の前記テーパーは、前記ケース電極の先端部の真下と前記絶縁基板の間に局所的に設けられていることを特徴とする請求項1~6の何れか1項に記載の半導体モジュール。
- 前記半導体素子はワイドバンドギャップ半導体によって形成されていることを特徴とする請求項1~7の何れか1項に記載の半導体モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021025347A JP7484766B2 (ja) | 2021-02-19 | 2021-02-19 | 半導体モジュール |
US17/397,344 US11735490B2 (en) | 2021-02-19 | 2021-08-09 | Semiconductor module |
DE102021128229.2A DE102021128229A1 (de) | 2021-02-19 | 2021-10-29 | Halbleitermodul |
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