JP2022125142A - Method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a curable resin composition capable of improving reliability of a semiconductor device.

SOLUTION: The curable resin composition, which is applied by an inkjet system and is photocurable and thermocurable, contains (a) a cationically polymerizable monomer, (b) a photocationic polymerization initiator, and (c) an acrylonitrile copolymer being liquid at room temperature and has a viscosity at 25°C of 10 mPa s or more and 100 mPa s or less.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2022,JPO&INPIT

Description

TECHNICAL FIELD The present invention relates to a curable resin composition that is applied by an inkjet method and that can be photo-cured and thermo-cured, and a method for manufacturing a semiconductor device using the same.

A semiconductor device is known in which a single or a plurality of semiconductor chips are laminated on a substrate with a curable resin composition layer interposed therebetween. This semiconductor device is manufactured by laminating a curable resin composition layer on the lower surface of a semiconductor chip and curing the curable resin composition layer.

As a method for manufacturing the above semiconductor device, a pasty curable resin composition (die attach paste (DAP)) is applied onto a substrate or a semiconductor chip by dispenser or screen printing, and after forming a curable resin composition layer, , a semiconductor chip is laminated thereon, and the curable resin composition layer is cured. However, in the production method using this DAP, there is a problem that the thickness accuracy of the connecting portion is low due to the long tact time and the difficulty in applying the curable resin composition with a uniform thickness.

Therefore, in Patent Documents 1 and 2, a method of applying a curable resin composition with an inkjet device is proposed as a manufacturing method using DAP in order to shorten the tact time and increase the thickness accuracy of the connection portion. Specifically, a curable resin composition that can be photo-cured and heat-cured is ejected from an inkjet device to form a curable resin composition layer, and this is photo-cured to form a B-staged layer. and a step of laminating a semiconductor chip thereon and thermally curing the B-staged layer.

Further, in Patent Documents 1 and 2, a curable resin composition for inkjet uses a curable compound, a photopolymerization initiator, and a thermosetting agent, and the curable compound is a radical polymerization The use of photocurable compounds such as curable monomers and thermosetting compounds such as epoxy compounds and oxetane compounds are disclosed.

JP 2014-220372 A

JP 2014-237814 A

However, with the curable resin compositions disclosed in Patent Documents 1 and 2, high bonding strength cannot be obtained, and the reliability of the semiconductor device may deteriorate. Among the reliability, the reflow resistance is particularly deteriorated, and there is a possibility that peeling may occur in the post-process.

An object of the present invention is to provide a curable resin composition capable of improving the reliability of a semiconductor device, and a method for manufacturing a semiconductor device using the same.

In order to solve the above-mentioned problems, the first invention is a curable resin composition that is coated by an inkjet method and is a photocurable and thermosetting adhesive for semiconductor devices, comprising the following components ( a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator that is a sulfonium borate complex;
(c) a carboxyl-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a thermal cationic polymerization initiator that is a sulfonium borate complex,
The curable resin composition has a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25°C.

A second invention is a method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring substrate or a second semiconductor chip are fixed by a resin cured material layer, the method comprising the following steps (A) to (D):
(A) A curable resin composition having photocurable and thermosetting properties and having a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the wiring substrate or the electrode-forming surface of the second semiconductor chip, A step of ejecting from an inkjet nozzle to form a curable resin composition layer;
(B) a step of irradiating the curable resin composition layer with light to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip onto the semi-cured resin layer to laminate the first semiconductor chip and the wiring substrate or the second semiconductor chip; and (D) semi-curing A step of heat-treating the resin layer to form a cured resin layer,
The curable resin composition comprises the following components (a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator that is a sulfonium borate complex;
(c) a carboxyl group-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a thermal cationic polymerization initiator that is a sulfonium borate complex.

According to the present invention, the curable resin composition contains (a) a cationic polymerizable monomer, (b) a photocationic polymerization initiator, and (c) an acrylonitrile copolymer that is liquid at room temperature. and the wiring board or the second semiconductor chip, the reliability of the semiconductor device can be improved.

FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device obtained by a method of manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the configuration of a semiconductor device obtained by a method of manufacturing a semiconductor device according to the second embodiment of the present invention.

<First embodiment>
[Structure of semiconductor device]
First, referring to FIG. 1, the configuration of a semiconductor device 10 obtained by the method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described. This semiconductor device 10 includes a wiring board 11 and a semiconductor chip 13 fixed on the wiring board 11 by a resin cured material layer 12 . The semiconductor chip 13 is electrically connected to the wiring substrate 11 by bonding wires 13a. The cured resin layer 12, the semiconductor chip 13 and the bonding wires 13a provided on the wiring board 11 may be sealed with a sealing resin (not shown).

[Composition of curable resin composition]
The cured resin layer 12 is formed by curing the curable resin composition according to the first embodiment of the present invention. This curable resin composition is applied by an inkjet method, can be photo-cured and heat-cured, and contains the following components (a) to (c). The curable resin composition may further contain the following component (d) in addition to the above components (a) to (c).

<Component (a)>
Component (a) is a cationically polymerizable monomer. From the viewpoint of improving the curing rate of the curable resin composition, this monomer is preferably an alicyclic epoxy compound. The alicyclic epoxy compound is preferably monofunctional or difunctional. This is because an alicyclic epoxy compound having a functionality of 3 or more may excessively increase the viscosity of the curable resin composition, thereby deteriorating the applicability. A monofunctional alicyclic epoxy compound or a bifunctional alicyclic epoxy compound may be used alone, or a monofunctional alicyclic epoxy compound and a bifunctional alicyclic epoxy compound may be used in combination. good.

Examples of monofunctional alicyclic epoxy compounds include 1,2-epoxy-4-vinylcyclohexane (Celoxide 2000, manufactured by Daicel Corporation), 4-vinylepoxycyclohexane, dioctyl epoxyhexahydrophthalate, and epoxyhexahydrophthalate. and di-2-ethylhexyl acid. These may be used alone or may be used in combination. Examples of bifunctional alicyclic epoxy compounds include (3,3′,4,4′-diepoxy)bicyclohexyl (Celoxide 8000, manufactured by Daicel Corporation), 3,4-epoxycyclohexylmethyl-3,4- Epoxycyclohexanecarboxylate (Celoxide 2021P, manufactured by Daicel Corporation), 3,4-epoxycyclohexyloctyl-3,4-epoxycyclohexanecarboxylate, 2-(3,4-epoxycyclohexyl-5,5-spiro-3,4 -epoxy)cyclohexane-meta-dioxane, bis(3,4-epoxycyclohexylmethyl)adipate, vinylcyclohexene dioxide, bis(3,4-epoxy-6-methylcyclohexylmethyl)adipate, 3,4-epoxy-6- methylcyclohexyl-3,4-epoxy-6-methylcyclohexanecarboxylate, methylenebis(3,4-epoxycyclohexane), dicyclopentadiene diepoxide, ethylene glycol di(3,4-epoxycyclohexylmethyl)ether, ethylenebis(3 ,4-epoxycyclohexanecarboxylate), 1,2,8,9-diepoxylimonene, and the like. These may be used alone or may be used in combination.

<Component (b)>
Component (b) is a photocationic polymerization initiator. The photocationic polymerization initiator is preferably a sulfonium borate complex. When a UV-LED is used as the light source, the sulfonium borate complex is tris(4-(4-acetylphenyl)thiophenyl)sulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (1). is preferred.

Photocationic polymerization initiators such as sulfonium borate complexes act as thermal curing agents after irradiation with UV light. Therefore, even if the thermal cationic polymerization initiator, which is the component (d), is not added to the curable resin composition, the semi-cured curable resin composition can be thermally cured by irradiation with UV light. .

<Component (c)>
Component (c) is an acrylonitrile copolymer that is liquid at room temperature. The acrylonitrile copolymer is, for example, at least one of an acrylonitrile-butadiene rubber (NBR) represented by the following formula (4), a product obtained by modifying it, and a CTBN-modified epoxy resin.

Since the acrylonitrile portion of the acrylonitrile copolymer exhibits weak basicity, it causes weak curing inhibition during the curing reaction when added to a cationic polymerization curing system. This curing inhibition inhibits the progress of curing due to a dark reaction after UV irradiation during B-stage conversion by UV light. Therefore, it becomes possible to control the surface tackiness of the semi-cured resin layer. The semi-cured resin layer will be described later in the "method for manufacturing a semiconductor device".

It is preferable that the acrylonitrile copolymer is added in an amount of 0.5 parts by mass or more and 25 parts by mass or less with respect to 100 parts by mass of the cationically polymerizable monomer. If the acrylonitrile copolymer is less than 0.5 parts by mass, the curing of the semi-cured resin layer may proceed after UV light irradiation, and the surface tackiness of the semi-cured resin layer may decrease. On the other hand, if the acrylonitrile copolymer exceeds 25 parts by mass, the curing inhibition is so strong that curing after UV light irradiation does not proceed sufficiently, and there is a possibility that uniform chip mounting may not be possible. In addition, the viscosity of the curable resin composition at 25° C. becomes too high, and there is a possibility that the coating properties by inkjet may deteriorate.

The acrylonitrile content in the acrylonitrile copolymer is preferably 10 mol % or more and 30 mol % or less per molecule. If the amount of acrylonitrile is less than 10 mol % in one molecule, the semi-cured resin layer may be cured after UV light irradiation, and the surface tackiness of the semi-cured resin layer may decrease. On the other hand, if the amount of acrylonitrile exceeds 30 mol % in one molecule, the curing inhibition is too strong and the curing after UV light irradiation does not proceed sufficiently, which may prevent uniform chip mounting. In addition, the viscosity of the curable resin composition at 25° C. becomes too high, and there is a possibility that the coating properties by inkjet may deteriorate.

（但し、式（２）中、Ｒ１は、アラルキル基であり、Ｒ２は低吸アルキル基であり、Ｒ３は水素原子または低吸アルコキシカルボニル基である。Ｘはハロゲン原子であり、ｎは１～３の整数である。）

<Component (d)>
Component (d) is a thermal cationic polymerization initiator. Although the component (d) is not an essential component as described above, it is preferable that the curable resin composition contains the component (d) from the viewpoint of thermally curing the curable resin composition more reliably. However, from the viewpoint of storage stability of the curable resin composition, it is preferable that the curable resin composition does not contain component (d). The thermal cationic polymerization initiator is preferably a sulfonium borate complex. The sulfonium borate complexes are triallylsulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (2) and (4-hydroxyphenyl)dimethylsulfonium=tetrakis(pentafluorophenyl)borate represented by the following formula (3). It is preferably at least one of fluorophenyl)borate.

(In formula (2), R1 is an aralkyl group, R2 is a low-absorbing alkyl group, R3 is a hydrogen atom or a low-absorbing alkoxycarbonyl group, X is a halogen atom, and n is 1 to is an integer of 3.)

<Other ingredients>
The curable resin composition optionally contains at least one of adhesion aids such as coupling agents, conductive particles, pigments, dyes, leveling agents, antifoaming agents, polymerization inhibitors, and the like. You can

[Method for manufacturing a semiconductor device]
Next, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described. This method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a semiconductor chip 13 and a wiring substrate 11 are fixed by a cured resin layer 12, and includes the following steps (A1) to (D1).

(Step (A1))
A curable resin composition layer is formed by ejecting the above curable resin composition from an ink-jet nozzle onto the electrode forming surface of the wiring substrate 11 . The above curable resin composition has a viscosity in the range of 10 mPa·s to 100 mPa·s at 25°C. If the viscosity at 25°C is outside the above range, the coating properties of the curable resin composition using an inkjet device will be reduced.

(Step (B1))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, B-stage refers to a state in which the film viscosity is in the range of 1000 Pa·s or more and 15000 Pa·s or less. Since the semi-cured resin layer is in the B-stage state, a good surface tackiness can be obtained, enabling uniform chip mounting and improving the die shear strength (the strength at which the wiring substrate 11 and the semiconductor chip 13 are broken). do.

(Step (C1))
Next, the semiconductor chip 13 and the wiring board 11 are stacked on the semi-cured resin layer by pressing the electrode formation surface of the semiconductor chip 13, and the semiconductor chip 13 and the wiring board 11 are electrically connected. form the body.

(Step (D1))
Next, the semi-cured resin layer of the laminate is heat-treated to form the cured resin layer 12 . Next, the semiconductor chip 13 is electrically connected to the wiring substrate 11 by bonding wires 13a.

[effect]
The curable resin composition according to the first embodiment contains a cationic polymerizable monomer as component (a), a cationic photopolymerization initiator as component (b), and an acrylonitrile copolymer as component (c). . The bonding strength between the semiconductor chip 13 and the wiring board 11 can be increased by applying this curable resin composition to the semiconductor manufacturing method including the steps (A1) to (D1). Therefore, reliability of the semiconductor device can be improved. Moreover, the tact time can be shortened, and the semiconductor device can be manufactured efficiently. Furthermore, it is also possible to improve the thickness accuracy of the connecting portion of the semiconductor device.

<Second embodiment>
[Structure of semiconductor device]
First, referring to FIG. 2, the configuration of a semiconductor device 10A obtained by the method of manufacturing a semiconductor device according to the second embodiment of the present invention will be described. This semiconductor device 10A further includes a semiconductor chip 15 fixed on the semiconductor chip 13 by a resin cured material layer 14 . In addition, in 2nd Embodiment, the same code|symbol is attached|subjected to the same location as 1st Embodiment, and description is abbreviate|omitted.

The semiconductor chip 15 is electrically connected to the wiring substrate 11 by bonding wires 15a. The cured resin layers 12 and 14, the semiconductor chips 13 and 15, and the bonding wires 13a and 15a provided on the wiring board 11 may be sealed with a sealing resin (not shown).

[Method for manufacturing a semiconductor device]
Next, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described. This method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a semiconductor chip 13 and a wiring substrate 11 are fixed by a resin cured material layer 12, and a semiconductor chip 15 and a semiconductor chip 13 are fixed by a resin cured material layer 14. Therefore, in addition to the steps (A1) to (D1) of the first embodiment, the following steps (A2) to (D2) are further provided.

(Step (A2))
After the above steps (A1) to (D1), a curable resin composition layer is formed by ejecting a curable resin composition onto the electrode-formed surface of the semiconductor chip 13 from an inkjet nozzle. The curable resin composition is the same as the curable resin composition according to the first embodiment.

(Step (B2))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, B-stage refers to a state in which the film viscosity is in the range of 1000 Pa·s or more and 15000 Pa·s or less. Since the semi-cured resin layer is in the B-stage state, a good surface tackiness can be obtained, enabling uniform chip mounting and improving the die shear strength (the strength at which the semiconductor chips 13 and 15 are broken).

(Step (C2))
Next, the electrode formation surface of the semiconductor chip 15 is pressed onto the semi-cured resin layer to laminate the semiconductor chips 13 and 15 to form a laminate in which the semiconductor chips 13 and 15 are electrically connected.

(Step (D2))
Next, the semi-cured resin layer of the laminate is heat-treated to form a cured resin layer 14 . Next, the semiconductor chip 15 is electrically connected to the wiring substrate 11 by bonding wires 15a.

[effect]
In the method for manufacturing a semiconductor device according to the second embodiment, the curable resin composition is applied to the method for manufacturing a semiconductor including the steps (A1) to (D1) and steps (A2) to (D2). , the bonding strength between the semiconductor chip 13 and the wiring board 11 and between the semiconductor chip 13 and the semiconductor chip 15 can be increased, thereby improving the reliability of the semiconductor device 10A.

[Modification]
In the above-described second embodiment, the configuration in which the two semiconductor chips 13 and 15 are stacked on the wiring substrate 11 has been described as an example. good too. In this case, a cured resin layer is provided between each semiconductor chip. This cured resin layer is formed in the same manner as the cured resin layer 14 in the above-described second embodiment.

EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited only to these examples.

Table 1 shows materials used in Examples and Comparative Examples.

[Examples 4-6, Reference Examples 1-3, 7-10, Comparative Examples 1-3]
(Step (A1))
First, each material was weighed so as to have the formulation shown in Tables 2 and 3, placed in a plastic container, mixed uniformly with a rotation and revolution mixer, and then filtered with a 5 μm filter to obtain a curable resin. A composition (adhesive) was prepared. Next, on the FR4 glass epoxy substrate (thickness 1 mm), an inkjet device (heated to 50 ° C., using a head manufactured by Toshiba Tec Co., Ltd., so that the size of 10 × 10 mm is placed on the position where the semiconductor chip is placed, A curable resin composition was applied to a thickness of 20 μm using a UV-LED (365 nm) light source to form a curable resin composition layer.

(Step (B1))
Next, as shown in Tables 2 and 3, the curable resin composition layer immediately after application is irradiated with UV-LED light so that the integrated amount of light is in the range of 50 to 3000 mJ/cm ² for photocuring. Thus, a B-staged semi-cured resin layer was formed.

(Step (C1))
Next, using a die bonding apparatus, a silicon bare chip that looked like a semiconductor chip (3.3×3.3 mm, thickness 0.4 mm) was laminated on the semi-cured resin layer to obtain a laminate.

(Step (D1))
Next, the resulting laminate was placed in an oven at 160° C. for 1 hour to thermally cure the B-staged semi-cured resin layer, thereby forming a cured resin layer. As described above, the desired semiconductor device (laminated structure) was manufactured.

[evaluation]
The curable resin compositions prepared in Examples 4 to 6, Reference Examples 1 to 3, 7 to 10, and Comparative Examples 1 to 3 and the semiconductor devices prepared were evaluated as follows.

(viscosity)
The initial viscosity of the curable resin composition at 25°C and the viscosity of the curable resin composition when heated at 50°C were measured using a rheometer (manufactured by HAAKE). C35/1 was used as the rotor, and the viscosity was measured under the condition of sialate 100 (1/s).

(Viscosity stability after heating)
The viscosity stability after heating of the curable resin composition was determined as follows. First, the initial viscosity at 25°C of the curable resin composition was measured using a rheometer (manufactured by HAAKE). Next, after leaving the curable resin composition in an oven at 50° C. for 24 hours, the viscosity was measured again using a rheometer (manufactured by HAAKE). Next, based on the measured viscosities before and after heating, the viscosity stability after heating was determined according to the following criteria. C35/1 was used as the rotor, and the viscosity was measured under the condition of sialate 100 (1/s).
○: The viscosity after heating is less than 1.1 times the initial viscosity △: The viscosity after heating is 1.1 times or more and less than 1.5 times the initial viscosity ×: The viscosity after heating is At least 1.5 times the initial viscosity

(Applicability of inkjet device)
After forming a curable resin composition layer by ejecting a curable resin composition with a Toshiba Tec head (on-demand piezo system, 636ch head, 300 dpi), the surface state of the curable resin composition layer was observed. Then, the applicability (ejection stability) of the ink jet device was determined according to the following criteria.
○: Uniform surface condition without coating unevenness or chipping △: Part of the coating film has unevenness or chipping ×: There is unevenness or chipping on the entire surface of the coating film

(Film viscosity of B-staged semi-cured resin layer)
The film viscosity of the B-staged semi-cured resin layer was simulated as follows using a rheometer MARS (manufactured by HAAKE). First, a measurement sensor PP8 having a diameter of φ8 mm and a plate TMP8 were attached to the rheometer, and zero point adjustment was performed. Next, the plate was removed, and one drop of the curable resin composition used in Reference Examples 1, 9 and 10 and Comparative Examples 1 to 3 was dropped on the measurement portion on the plate using a dropper. Next, by irradiating the dropped curable resin composition with UV-LED light of the same integrated light amount as that irradiated in Reference Examples 1, 9, 10 and Comparative Examples 1 to 3, B stage. A semi-cured resin layer was formed. Next, the plate on which the semi-cured resin layer was formed was attached to a rheometer, and the viscosity of the semi-cured resin layer was measured under conditions of a gap of 0.2 mm, a temperature of 25°C, and an oscillation mode (pressure of 1000 Pa, frequency of 1 Hz). did. In addition, in the curable resin compositions used in Comparative Examples 1 and 3, the film viscosity could not be measured because the curable resin compositions were cured by irradiation with UV-LED light.

(B-stage state after UV curing)
After UV-LED light was applied to the curable resin composition applied by an inkjet device, the surface condition was evaluated according to the following criteria.
●: There is no tackiness on the surface, making it difficult to attach the bare silicon chip ○: There is enough tackiness to attach the bare silicon chip Cured composition layer flows ×: Hardly cured

(Die shear strength/initial)
The initial die shear strength of the fabricated semiconductor device was measured at room temperature using a die shear tester 4000 (manufactured by DAGE). This measurement was performed on five semiconductor devices to obtain an average value of die shear strength.

(Reflow resistance (die shear strength/after reflow))
The reflow resistance of the semiconductor device was determined as follows. The initial die shear strength of the fabricated semiconductor device was measured at room temperature using a die shear tester 4000 (manufactured by DAGE). Moreover, after passing the manufactured semiconductor device through an IR reflow furnace (Max 260° C.) three times, the die shear strength was measured again using a die shear tester 4000 (manufactured by DAGE). Based on the die shear strength before and after the reflow test measured as described above, the reflow resistance was determined according to the following criteria.
○: The die shear strength after reflow treatment is 90% or more of the initial die shear strength △: The die shear strength after reflow treatment is 70% or more and less than 90% of the initial die shear strength ×: After reflow treatment The die shear strength is less than 70% of the initial die shear strength

Tables 2 and 3 show formulations and evaluation results of the curable resin compositions of Examples 4 to 6, Reference Examples 1 to 3, 7 to 10, and Comparative Examples 1 to 3.

The above evaluation shows the following.
In Examples 4 to 6 and Reference Examples 1 to 3 and 7 to 10, which contained an appropriate amount of acrylonitrile copolymer, it was possible to leave an appropriate amount of surface tack after UV irradiation, resulting in good chip mounting, initial and after reflow. die shear strength is increased. In addition, a low-viscosity curable resin composition that has a stable film viscosity and can be applied by inkjet can be obtained.
In Comparative Example 1 containing no acrylonitrile copolymer and Comparative Example 3 containing a copolymer containing no acrylonitrile, curing progressed after UV irradiation, surface tack disappeared, and uniform chip mounting was not possible. The die shear strength is also lowered. In Comparative Example 2, in which the acrylonitrile copolymer was added in an excessively large amount, curing inhibition was so strong that curing after UV irradiation did not proceed sufficiently, and chip mounting could not be performed uniformly. In addition, the viscosity of the curable resin composition increases, and the ink jet applicability also deteriorates.

Although the embodiments and examples of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments and examples, and various modifications are possible based on the technical concept of the present invention. is.

For example, the configurations, methods, steps, shapes, materials, numerical values, etc., given in the above-described embodiments and examples are merely examples, and different configurations, methods, steps, shapes, materials, numerical values, etc., may be used if necessary. may be used.

Also, the configurations, methods, steps, shapes, materials, numerical values, etc. of the above-described embodiments and examples can be combined with each other without departing from the gist of the present invention.

Reference Signs List 10, 10A semiconductor device 11 wiring board 12, 14 cured resin layer 13, 15 semiconductor chip 13a, 15a bonding wire

TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device using a curable resin composition that is applied by an inkjet method and that can be photo-cured and heat-cured.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing a semiconductor device capable of improving the reliability of the semiconductor device.

In order to solve the above-described problems, a first invention is a method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring substrate or a second semiconductor chip are fixed by a resin cured material layer, the method comprising: Steps (A) to (D):
(A) A curable resin composition having photocurable and thermosetting properties and having a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring substrate or the second semiconductor chip. , a step of ejecting from an inkjet nozzle to form a curable resin composition layer;
(B) a step of irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip onto the semi-cured resin layer to laminate the first semiconductor chip and the wiring substrate or the second semiconductor chip; and
(D) a step of heat-treating the semi-cured resin layer to form a cured resin layer;
with
The curable resin composition contains the following components (a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1) ;
(c) a carboxyl-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a thermal cationic polymerization initiator that is a sulfonium borate complex and is represented by the following formula (3) ,
In the method of manufacturing a semiconductor device, the component (c) is contained in an amount of 0.5 parts by mass or more and 25 parts by mass or less with respect to 100 parts by mass of the component (a).

A second invention is a method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring substrate or a second semiconductor chip are fixed by a resin cured material layer, the method comprising the following steps (A) to (D):
(A) A curable resin composition having photocurable and thermosetting properties and having a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring substrate or the second semiconductor chip. , a step of ejecting from an inkjet nozzle to form a curable resin composition layer;
(B) a step of irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip onto the semi-cured resin layer to laminate the first semiconductor chip and the wiring substrate or the second semiconductor chip; and ( D) heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1) ;
(c) a carboxyl group-terminated butadiene nitrile rubber which is liquid at room temperature; and (d) a thermal cationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (3) .

Claims (7)

A curable resin composition that is applied by an inkjet method and is a photocurable and thermosetting adhesive for a semiconductor device, comprising the following components (a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator that is a sulfonium borate complex;
(c) a carboxyl-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a thermal cationic polymerization initiator that is a sulfonium borate complex,
A curable resin composition having a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25°C. The curable resin composition according to claim 1, wherein the cationic polymerizable monomer is an alicyclic epoxy compound. 3. The sulfonium borate complex of the photocationic polymerization initiator is tris(4-(4-acetylphenyl)thiophenyl)sulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (1): The curable resin composition according to .

The sulfonium borate complex of the thermal cationic polymerization initiator is triallylsulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (2), and (4-hydroxyphenyl ) dimethylsulfonium=tetrakis(pentafluorophenyl)borate.

(In formula (2), R1 is an aralkyl group, R2 is a low-absorbing alkyl group, R3 is a hydrogen atom or a low-absorbing alkoxycarbonyl group, X is a halogen atom, and n is 1 to is an integer of 3.)

The curable resin composition according to any one of claims 1 to 4, wherein the carboxyl group-terminated butadiene nitrile rubber is added in an amount of 0.5 parts by mass or more and 25 parts by mass or less with respect to 100 parts by mass of the cationic polymerizable monomer. thing. The curable resin composition according to any one of claims 1 to 5, wherein the carboxyl group-terminated butadiene nitrile rubber has an acrylonitrile content of 10 mol% or more and 30 mol% or less per molecule. A method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring substrate or a second semiconductor chip are fixed by a resin cured material layer, comprising the following steps (A) to (D):
(A) A curable resin composition having photocurable and thermosetting properties and having a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring substrate or the second semiconductor chip. , a step of ejecting from an inkjet nozzle to form a curable resin composition layer;
(B) a step of irradiating the curable resin composition layer with light to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip onto the semi-cured resin layer to laminate the first semiconductor chip and the wiring substrate or the second semiconductor chip; and ( D) heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) a cationically polymerizable monomer;
(b) a photocationic polymerization initiator that is a sulfonium borate complex;
(c) a carboxyl group-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a thermal cationic polymerization initiator that is a sulfonium borate complex.

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