JP2018065957A - Curable resin composition, and method for producing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a curable resin composition that can improve the reliability of a semiconductor device.SOLUTION: A curable resin composition is applied by the inkjet system, and can be cured with light or heat. The curable resin composition contains (a) a cationic polymerizable monomer, (b) a photocationic polymerization initiator, and (c) an acrylonitrile copolymer that is liquid at room temperature, and has a 25°C viscosity of 10 mPa s or more and 100 mPa s or less.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a curable resin composition that is applied by an inkjet method and that can be photocured and thermally cured, and a method for manufacturing a semiconductor device using the same.

  2. Description of the Related Art There is known a semiconductor device in which a single or a plurality of semiconductor chips are stacked on a substrate via a curable resin composition layer. This semiconductor device is manufactured by curing the curable resin composition layer with the curable resin composition layer laminated on the lower surface of the semiconductor chip.

  As a method for manufacturing the semiconductor device, a paste-like curable resin composition (die attach paste (DAP)) is applied on a substrate or a semiconductor chip by a dispenser or screen printing to form a curable resin composition layer. Some semiconductor chips are stacked thereon to cure the curable resin composition layer. However, this manufacturing method using DAP has a problem that the tact time is long and it is difficult to apply the curable resin composition with a uniform thickness, so that the thickness accuracy of the connecting portion is low.

  Therefore, Patent Documents 1 and 2 propose a method of applying a curable resin composition by an inkjet apparatus as a manufacturing method using DAP in order to shorten the tact time and increase the thickness accuracy of the connection portion. Specifically, a step of discharging a curable resin composition that is photocurable and heat curable from an inkjet apparatus to form a curable resin composition layer, and photocuring this to form a B-staged layer And a method of manufacturing a semiconductor device including a step of stacking a semiconductor chip thereon and thermosetting the B-staged layer.

  In Patent Documents 1 and 2, as a curable resin composition for inkjet, a curable compound, a photopolymerization initiator, and a thermosetting agent are used. As the curable compound, radical polymerization is used. It is disclosed to use a compound containing a photocurable compound such as a curable monomer and a thermosetting compound such as an epoxy compound and an oxetane compound.

JP 2014-220372 A

JP 2014-237814 A

  However, in the curable resin compositions disclosed in Patent Documents 1 and 2, high bonding strength cannot be obtained, and the reliability of the semiconductor device may be reduced. Among the reliability, the reflow resistance is particularly deteriorated, and there is a possibility that peeling occurs in a subsequent process.

  The objective of this invention is providing the curable resin composition which can improve the reliability of a semiconductor device, and the manufacturing method of a semiconductor device using the same.

In order to solve the above-described problems, the first invention is a curable resin composition that is applied by an ink jet method and is photocurable and heat curable, and includes the following components (a) to (c): :
(A) a cationically polymerizable monomer;
(B) a photocationic polymerization initiator; and (c) an acrylonitrile copolymer that is liquid at room temperature,
The curable resin composition has a viscosity at 25 ° C. of 10 mPa · s or more and 100 mPa · s or less.

A second invention is a method of manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed by a cured resin layer, and the following steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting on the electrode formation surface of the wiring board or the second semiconductor chip and having a viscosity at 25 ° C. of 10 mPa · s to 100 mPa · s, Discharging from an inkjet nozzle to form a curable resin composition layer;
(B) irradiating light to the curable resin composition layer to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip on the semi-cured resin layer and laminating the first semiconductor chip and the wiring substrate or the second semiconductor chip; and (D) semi-cured A step of heat-treating the resin layer to form a cured resin layer,
The curable resin composition has the following components (a) to (c):
(A) a cationically polymerizable monomer;
(B) a cationic photopolymerization initiator; and (c) a method for producing a semiconductor device comprising an acrylonitrile copolymer polymer that is liquid at room temperature.

  According to the present invention, the curable resin composition contains (a) a cationic polymerizable monomer, (b) a photocationic polymerization initiator, and (c) an acrylonitrile copolymer that is liquid at room temperature. And the reliability of the semiconductor device can be improved by further increasing the bonding strength between the wiring board and the second semiconductor chip.

FIG. 1 is a cross-sectional view showing a configuration of a semiconductor device obtained by the method for manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a configuration of a semiconductor device obtained by the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

<First Embodiment>
[Configuration of semiconductor device]
First, the configuration of a semiconductor device 10 obtained by the method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described with reference to FIG. The semiconductor device 10 includes a wiring board 11 and a semiconductor chip 13 fixed on the wiring board 11 with a cured resin layer 12. The semiconductor chip 13 is electrically connected to the wiring board 11 by bonding wires 13a. The cured resin layer 12, the semiconductor chip 13, and the bonding wire 13a provided on the wiring substrate 11 may be sealed with a sealing resin (not shown).

[Composition of curable resin composition]
The cured resin layer 12 is formed by curing the curable resin composition according to the first embodiment of the present invention. This curable resin composition is applied by an ink jet method and can be photocured and thermally cured, and includes the following components (a) to (c). The curable resin composition may further include the following component (d) in addition to the components (a) to (c).

<Component (a)>
Component (a) is a cationically polymerizable monomer. This monomer is preferably an alicyclic epoxy compound from the viewpoint of improving the curing rate of the curable resin composition. The alicyclic epoxy compound is preferably monofunctional or bifunctional. This is because the trifunctional or higher alicyclic epoxy compound has a possibility that the viscosity of the curable resin composition becomes too high and the applicability is deteriorated. A monofunctional alicyclic epoxy compound or a bifunctional alicyclic epoxy compound may be used alone, or a monofunctional alicyclic epoxy compound and a bifunctional alicyclic epoxy compound may be used in combination. Good.

  Examples of the monofunctional alicyclic epoxy compound include 1,2-epoxy-4-vinylcyclohexane (Daicel Corporation, Celoxide 2000), 4-vinyl epoxycyclohexane, dioctyl epoxyhexahydrophthalate, and epoxyhexahydrophthalate. Examples include di-2-ethylhexyl acid. These may be used alone or in combination. Examples of the bifunctional alicyclic epoxy compound include (3,3 ′, 4,4′-diepoxy) bicyclohexyl (manufactured by Daicel Corporation, Celoxide 8000), and 3,4-epoxycyclohexylmethyl-3,4- Epoxycyclohexanecarboxylate (Daicel Corporation, Celoxide 2021P), 3,4-epoxycyclohexyloctyl-3,4-epoxycyclohexanecarboxylate, 2- (3,4-epoxycyclohexyl-5,5-spiro-3,4 -Epoxy) cyclohexane-meta-dioxane, bis (3,4-epoxycyclohexylmethyl) adipate, vinylcyclohexene dioxide, bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate, 3,4-epoxy-6- Methylcyclohexyl -3,4-epoxy-6-methylcyclohexanecarboxylate, methylene bis (3,4-epoxycyclohexane), dicyclopentadiene diepoxide, ethylene glycol di (3,4-epoxycyclohexylmethyl) ether, ethylene bis (3,4 -Epoxycyclohexanecarboxylate), 1,2,8,9-diepoxy limonene and the like. These may be used alone or in combination.

<Component (b)>
Component (b) is a photocationic polymerization initiator. The cationic photopolymerization initiator is preferably a sulfonium borate complex. When UV-LED is used as the light source, the sulfonium borate complex is tris (4- (4-acetylphenyl) thiophenyl) sulfonium tetrakis- (pentafluorophenyl) borate represented by the following formula (1). Is preferred.

  Photocationic polymerization initiators such as sulfonium borate complexes act as thermosetting agents after UV light irradiation. For this reason, even if the thermal cationic polymerization initiator which is a component (d) is not added with respect to curable resin composition, the curable resin composition semi-hardened by irradiation of UV light can be thermoset. .

<Component (c)>
Component (c) is an acrylonitrile copolymer that is liquid at room temperature. The acrylonitrile copolymer is, for example, at least one of acrylonitrile-butadiene rubber (NBR) represented by the following formula (4), a product obtained by modifying it, and a CTBN-modified epoxy resin.

  Since the acrylonitrile portion of the acrylonitrile copolymer is weakly basic, when added to a cationic polymerization curing system, it causes weak curing inhibition during the curing reaction. This curing inhibition suppresses the progress of curing due to a dark reaction after UV irradiation during B-stage formation with UV light. Therefore, the surface tack of the semi-cured resin layer can be controlled. The semi-cured resin layer will be described in “Method of manufacturing semiconductor device” described later.

  It is preferable that the acrylonitrile copolymer is added in an amount of 0.5 to 25 parts by mass with respect to 100 parts by mass of the cationic polymerizable monomer. If the acrylonitrile copolymer is less than 0.5 parts by mass, the curing of the semi-cured resin layer proceeds after UV light irradiation, and the surface tackiness of the semi-cured resin layer may be reduced. On the other hand, if the acrylonitrile copolymer exceeds 25 parts by mass, the inhibition of curing is too strong, and curing after UV light irradiation does not proceed sufficiently, and there is a possibility that uniform chip mounting cannot be performed. In addition, the viscosity of the curable resin composition at 25 ° C. becomes too high, and the applicability by inkjet may be deteriorated.

  The amount of acrylonitrile in the acrylonitrile copolymer is preferably 10 mol% or more and 30 mol% or less per molecule. When the amount of acrylonitrile is less than 10 mol% per molecule, the curing of the semi-cured resin layer proceeds after UV light irradiation, and the surface tackiness of the semi-cured resin layer may be reduced. On the other hand, if the amount of acrylonitrile exceeds 30 mol% in one molecule, curing inhibition is too strong and curing after UV light irradiation does not proceed sufficiently, and there is a possibility that uniform chip mounting cannot be performed. In addition, the viscosity of the curable resin composition at 25 ° C. becomes too high, and the applicability by inkjet may be deteriorated.

（但し、式（２）中、Ｒ１は、アラルキル基であり、Ｒ２は低吸アルキル基であり、Ｒ３は水素原子または低吸アルコキシカルボニル基である。Ｘはハロゲン原子であり、ｎは１〜３の整数である。）

<Component (d)>
Component (d) is a thermal cationic polymerization initiator. As described above, the component (d) is not an essential component, but from the viewpoint of more reliably thermosetting the curable resin composition, the curable resin composition preferably includes the component (d). However, from the viewpoint of storage stability of the curable resin composition, it is preferable that the curable resin composition does not contain the component (d). The thermal cationic polymerization initiator is preferably a sulfonium borate complex. The sulfonium borate complex includes triallylsulfonium tetrakis- (pentafluorophenyl) borate represented by the following formula (2), and (4-hydroxyphenyl) dimethylsulfonium = tetrakis (penta) represented by the following formula (3). It is preferably at least one of (fluorophenyl) borate.

(In the formula (2), R1 is an aralkyl group, R2 is a low-absorbing alkyl group, R3 is a hydrogen atom or a low-absorbing alkoxycarbonyl group, X is a halogen atom, and n is 1 to 1) It is an integer of 3.)

<Other ingredients>
The curable resin composition contains at least one of an adhesion aid such as a coupling agent, conductive particles, a pigment, a dye, a leveling agent, an antifoaming agent, and a polymerization inhibitor, if necessary. May be.

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described. This method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device in which the semiconductor chip 13 and the wiring substrate 11 are fixed by the cured resin layer 12, and includes the following steps (A1) to (D1).

(Process (A1))
The curable resin composition is discharged from an inkjet nozzle onto the electrode forming surface of the wiring substrate 11 to form a curable resin composition layer. Said curable resin composition has the viscosity of the range of 10 mPa * s or more and 100 mPa * s or less in 25 degreeC. When the viscosity at 25 ° C. is outside the above range, the applicability of the curable resin composition by the ink jet apparatus is lowered.

(Process (B1))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, the B-stage is a state where the film viscosity is in the range of 1000 Pa · s to 15000 Pa · s. Since the semi-cured resin layer is in a B-stage state, a good surface tack feeling can be obtained, so that even chip mounting can be achieved and die shear strength (strength at which the wiring substrate 11 and the semiconductor chip 13 are broken) is improved. To do.

(Process (C1))
Next, on the semi-cured resin layer, the electrode forming surface of the semiconductor chip 13 is pressed to laminate the semiconductor chip 13 and the wiring board 11, and the semiconductor chip 13 and the wiring board 11 are electrically connected. Form the body.

(Process (D1))
Next, the semi-cured resin layer of the laminate is heat-treated to form the cured resin layer 12. Next, the semiconductor chip 13 is electrically connected to the wiring board 11 by bonding wires 13a.

[effect]
The curable resin composition according to the first embodiment includes a cationic polymerizable monomer as the component (a), a photocationic polymerization initiator as the component (b), and an acrylonitrile copolymer as the component (c). . By applying this curable resin composition to a semiconductor manufacturing method including the above steps (A1) to (D1), the bonding strength between the semiconductor chip 13 and the wiring substrate 11 can be increased. Therefore, the reliability of the semiconductor device can be improved. Further, the tact time can be shortened and the semiconductor device can be manufactured efficiently. Furthermore, it is possible to increase the thickness accuracy of the connection portion of the semiconductor device.

<Second Embodiment>
[Configuration of semiconductor device]
First, the configuration of a semiconductor device 10A obtained by the method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described with reference to FIG. The semiconductor device 10 </ b> A further includes a semiconductor chip 15 fixed on the semiconductor chip 13 with a cured resin layer 14. Note that in the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

  The semiconductor chip 15 is electrically connected to the wiring board 11 by bonding wires 15a. The cured resin layers 12 and 14, the semiconductor chips 13 and 15, and the bonding wires 13 a and 15 a provided on the wiring substrate 11 may be sealed with a sealing resin (not shown).

[Method for Manufacturing Semiconductor Device]
Next, a method for manufacturing a semiconductor device according to the second embodiment of the present invention will be described. This method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device in which the semiconductor chip 13 and the wiring substrate 11 are fixed by the cured resin layer 12 and the semiconductor chip 15 and the semiconductor chip 13 are fixed by the cured resin layer 14. In addition to the steps (A1) to (D1) of the first embodiment, the following steps (A2) to (D2) are further provided.

(Process (A2))
After said process (A1)-(D1), a curable resin composition is discharged from the inkjet nozzle to the electrode formation surface of the semiconductor chip 13, and a curable resin composition layer is formed. The curable resin composition is the same as the curable resin composition according to the first embodiment.

(Process (B2))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, the B-stage is a state where the film viscosity is in the range of 1000 Pa · s to 15000 Pa · s. When the semi-cured resin layer is in the B-staged state, a good surface tack feeling can be obtained, so that uniform chip mounting can be achieved and the die shear strength (strength at which the semiconductor chips 13 and 15 are broken) is improved.

(Process (C2))
Next, the electrode forming surface of the semiconductor chip 15 is pressed on the semi-cured resin layer to stack the semiconductor chips 13 and 15, thereby forming a stacked body in which the semiconductor chips 13 and 15 are electrically connected.

(Process (D2))
Next, the semi-cured resin layer of the laminate is heat-treated to form the cured resin layer 14. Next, the semiconductor chip 15 is electrically connected to the wiring board 11 by bonding wires 15a.

[effect]
In the method for manufacturing a semiconductor device according to the second embodiment, the curable resin composition is applied to a method for manufacturing a semiconductor including the steps (A1) to (D1) and the steps (A2) to (D2). Further, the bonding strength between the semiconductor chip 13 and the wiring substrate 11 and between the semiconductor chip 13 and the semiconductor chip 15 can be further increased, and the reliability of the semiconductor device 10A can be improved.

[Modification]
In the second embodiment described above, the configuration in which the two semiconductor chips 13 and 15 are stacked on the wiring substrate 11 has been described as an example. However, the configuration in which three or more semiconductor chips are stacked on the wiring substrate is described. Also good. In this case, a cured resin layer is provided between the semiconductor chips. This cured resin layer is formed in the same manner as the cured resin layer 14 in the second embodiment described above.

  EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited only to these Examples.

Table 1 shows materials used in this example and comparative examples.

[Examples 1 to 10, Comparative Examples 1 to 3]
(Process (A1))
First, each material is weighed so as to have the composition shown in Table 2 and Table 3, put in a plastic container, mixed uniformly with a rotating and rotating mixer, and then filtered with a 5 μm filter, thereby curable resin. A composition (adhesive) was prepared. Next, on an FR4 glass epoxy substrate (thickness 1 mm), an inkjet apparatus (heated to 50 ° C., using a head manufactured by TOSHIBA TEC Co., Ltd.) Using a UV-LED (365 nm) light source), the curable resin composition was applied to a thickness of 20 μm to form a curable resin composition layer.

(Process (B1))
Next, as shown in Tables 2 and 3, UV-LED light is applied to the curable resin composition layer immediately after coating so that the integrated light quantity is in the range of 50 to 3000 mJ / cm ² , and photocuring is performed. Thus, a B-staged semi-cured resin layer was formed.

(Process (C1))
Next, using a die bonding apparatus, a silicon bare chip as a semiconductor chip (3.3 × 3.3 mm, thickness 0.4 mm) was stacked on the semi-cured resin layer to obtain a stacked body.

(Process (D1))
Next, the obtained laminate was placed in an oven at 160 ° C. for 1 hour, and the B-staged semi-cured resin layer was thermally cured to form a cured resin layer. Thus, the intended semiconductor device (laminated structure) was produced.

[Evaluation]
The following evaluation was performed on the curable resin compositions prepared in Examples 1 to 10 and Comparative Examples 1 to 3 and the fabricated semiconductor devices.

(viscosity)
The initial viscosity of the curable resin composition at 25 ° C. and the viscosity of the curable resin composition when heated at 50 ° C. were measured with a rheometer (manufactured by HAAKE). As a rotor, C35 / 1 was used, and the viscosity was measured under the condition of shear rate 100 (1 / s).

(Viscosity stability after heating)
The viscosity stability after heating of the curable resin composition was determined as follows. First, the initial viscosity at 25 ° C. of the curable resin composition was measured using a rheometer (manufactured by HAAKE). Next, after leaving the curable resin composition in an oven at 50 ° C. for 24 hours, the viscosity was measured again using a rheometer (manufactured by HAAKE). Next, based on the measured viscosity before and after heating, the viscosity stability after heating was determined according to the following criteria. Note that C35 / 1 was used as the rotor, and the viscosity was measured under the condition of shear rate 100 (1 / s).
○: The viscosity after heating is less than 1.1 times the initial viscosity Δ: The viscosity after heating is 1.1 times or more and less than 1.5 times the initial viscosity ×: The viscosity after heating is More than 1.5 times the initial viscosity

(Applicability of inkjet device)
After forming the curable resin composition layer by discharging the curable resin composition with a head manufactured by TOSHIBA TEC (on-demand piezo method, 636ch head, 300 dpi), the surface state of the curable resin composition layer is observed. And the applicability | paintability (ejection stability) of the inkjet apparatus was determined on the following reference | standard.
○: Uniform surface state with no coating unevenness or chipping △: There are unevenness or chipping in a part of the coating film ×: There is unevenness or chipping over the entire surface of the coating film

(Viscosity of B-staged semi-cured resin layer)
The film viscosity of the B-staged semi-cured resin layer was measured in a pseudo manner using a rheometer MARS (manufactured by HAAKE) as follows. First, a measuring sensor PP8 having a diameter of 8 mm and a plate TMP8 were attached to a rheometer, and zero point adjustment was performed. Next, the plate was removed, and one drop of the curable resin composition used in Examples 1, 9, 10 and Comparative Examples 1 to 3 was dropped onto the measurement portion on the plate. Next, the curable resin composition dropped is irradiated with UV-LED light having the same integrated light amount as that irradiated in Examples 1, 9, 10 and Comparative Examples 1 to 3, thereby forming a B stage. A semi-cured resin layer was formed. Next, the plate on which the semi-cured resin layer is formed is attached to a rheometer, and the viscosity of the semi-cured resin layer is measured under the conditions of a gap of 0.2 mm, a temperature of 25 ° C., and an oscillation mode (pressure 1000 Pa, frequency 1 Hz). did. In addition, in the curable resin composition used in Comparative Examples 1 and 3, since the curable resin composition was cured by irradiation with UV-LED light, the film viscosity could not be measured.

(B-stage after UV curing)
After irradiating UV-LED light to the curable resin composition apply | coated with the inkjet apparatus, the surface state was determined on the following reference | standard.
●: There is no tackiness on the surface and it is difficult to attach the silicon bare chip. ○: There is a tack feeling enough to attach the silicon bare chip. △: There is a slime component (low viscosity component) and the silicon bare chip is pasted Cured composition layer flows x: Almost not cured

(Die shear strength / initial)
The initial die shear strength of the manufactured semiconductor device was measured at room temperature using a die shear tester 4000 (manufactured by DAGE). This measurement was performed on five semiconductor devices, and the average value of die shear strength was obtained.

(Reflow resistance (die shear strength / after reflow))
The reflow resistance of the semiconductor device was determined as follows. The initial die shear strength of the manufactured semiconductor device was measured at room temperature using a die shear tester 4000 (manufactured by DAGE). Further, after passing the produced semiconductor device three times in an IR reflow furnace (Max 260 ° C.), the die shear strength was measured again with a die shear tester 4000 (manufactured by DAGE). Based on the die shear strength before and after the reflow test measured as described above, the reflow resistance was determined according to the following criteria.
○: The die shear strength after the reflow treatment is 90% or more of the initial die shear strength. Δ: The die shear strength after the reflow treatment is 70% or more and less than 90% of the initial die shear strength. The die shear strength is less than 70% of the initial die shear strength.

Tables 2 and 3 show the blending and evaluation results of the curable resin compositions of Examples 1 to 10 and Comparative Examples 1 to 3.

The following can be understood from the above evaluation.
In Examples 1 to 10 which appropriately contain an acrylonitrile copolymer, it is possible to leave an appropriate surface tack after UV irradiation, the chip mounting is good, and the die shear strength at the initial stage and after reflow is increased. Further, a low viscosity curable resin composition having a stable film viscosity and capable of being applied by ink jetting is obtained.
In Comparative Example 1 that does not include an acrylonitrile copolymer, and Comparative Example 3 that includes a copolymer that does not include acrylonitrile, curing proceeds after UV irradiation, surface tack is eliminated, and uniform chip mounting is not possible. Die shear strength is also reduced. In Comparative Example 2 in which the amount of the acrylonitrile copolymer added is too large, the inhibition of curing is too strong, and the curing after UV irradiation does not proceed sufficiently, so that uniform chip mounting cannot be performed. Moreover, the viscosity of the curable resin composition is increased, and the ink jet coating property is also deteriorated.

  Although the embodiments and examples of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments and examples, and various modifications based on the technical idea of the present invention are possible. It is.

  For example, the configurations, methods, steps, shapes, materials, numerical values, and the like given in the above-described embodiments and examples are merely examples, and different configurations, methods, steps, shapes, materials, numerical values, and the like are necessary as necessary. May be used.

  The configurations, methods, steps, shapes, materials, numerical values, and the like of the above-described embodiments and examples can be combined with each other without departing from the gist of the present invention.

10, 10A Semiconductor device 11 Wiring board 12, 14 Resin cured product layer 13, 15 Semiconductor chip 13a, 15a Bonding wire

Claims (10)

A curable resin composition that is applied by an inkjet method and is photocurable and heat curable, and includes the following components (a) to (c):
(A) a cationically polymerizable monomer;
(B) a photocationic polymerization initiator; and (c) an acrylonitrile copolymer that is liquid at room temperature,
Curable resin composition whose 25 degreeC viscosity is 10 mPa * s or more and 100 mPa * s or less. The following component (d):
The curable resin composition according to claim 1, further comprising (d) a thermal cationic polymerization initiator.   The curable resin composition according to claim 1, wherein the cationic polymerizable monomer is an alicyclic epoxy compound.   The curable resin composition according to any one of claims 1 to 3, wherein the cationic photopolymerization initiator is a sulfonium borate complex. The curable resin composition according to claim 4, wherein the sulfonium borate complex is tris (4- (4-acetylphenyl) thiophenyl) sulfonium tetrakis- (pentafluorophenyl) borate represented by the following formula (1). .

  The curable resin composition according to claim 2, wherein the thermal cationic polymerization initiator is a sulfonium borate complex. The sulfonium borate complex includes triallylsulfonium tetrakis- (pentafluorophenyl) borate represented by the following formula (2), and (4-hydroxyphenyl) dimethylsulfonium = tetrakis represented by the following formula (3). The curable resin composition according to claim 6, which is at least one of pentafluorophenyl) borate.

(In the formula (2), R1 is an aralkyl group, R2 is a low-absorbing alkyl group, R3 is a hydrogen atom or a low-absorbing alkoxycarbonyl group, X is a halogen atom, and n is 1 to 1) It is an integer of 3.)

  The curable resin composition according to any one of claims 1 to 7, wherein the acrylonitrile copolymer is added in an amount of 0.5 to 25 parts by mass with respect to 100 parts by mass of the cationic polymerizable monomer.   The curable resin composition according to any one of claims 1 to 8, wherein an amount of acrylonitrile in the acrylonitrile copolymer is 10 mol% or more and 30 mol% or less per molecule. A method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed by a cured resin layer, and the following steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting properties on the electrode formation surface of the wiring board or the second semiconductor chip and having a viscosity at 25 ° C. of 10 mPa · s to 100 mPa · s. Discharging the ink jet nozzle to form a curable resin composition layer;
(B) irradiating the curable resin composition layer with light to form a B-staged semi-cured resin layer;
(C) pressing the electrode forming surface of the first semiconductor chip on the semi-cured resin layer and laminating the first semiconductor chip and the wiring substrate or the second semiconductor chip; and D) heat-treating the semi-cured resin layer to form a cured resin layer,
The curable resin composition comprises the following components (a) to (c):
(A) a cationically polymerizable monomer;
(B) a cationic photopolymerization initiator; and (c) a method for producing a semiconductor device comprising an acrylonitrile copolymer polymer which is liquid at room temperature.

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