JP7392925B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device using a curable resin composition that is applied by an inkjet method and is photocurable and thermocurable.

2. Description of the Related Art Semiconductor devices are known in which one or more semiconductor chips are stacked on a substrate with a curable resin composition layer interposed therebetween. This semiconductor device is manufactured by laminating a curable resin composition layer on the lower surface of a semiconductor chip and curing the curable resin composition layer.

The method for manufacturing the semiconductor device includes applying a paste-like curable resin composition (die attach paste (DAP)) onto a substrate or semiconductor chip using a dispenser or screen printing to form a curable resin composition layer. There is one in which a semiconductor chip is laminated thereon and a curable resin composition layer is cured. However, this manufacturing method using DAP has a problem in that the takt time is long and the thickness accuracy of the connection portion is low because it is difficult to apply the curable resin composition with a uniform thickness.

Therefore, in Patent Documents 1 and 2, in order to shorten the takt time and improve the thickness accuracy of the connection portion, a method of applying a curable resin composition using an inkjet device is proposed as a manufacturing method using DAP. Specifically, a step of discharging a curable resin composition that can be photocured and thermocured from an inkjet device to form a curable resin composition layer, and photocuring this to form a B-staged layer. A method for manufacturing a semiconductor device has been proposed, which includes the steps of: stacking a semiconductor chip thereon and thermally curing the B-staged layer.

Further, in Patent Documents 1 and 2, as a curable resin composition for inkjet, one containing a curable compound, a photopolymerization initiator, and a thermosetting agent is used, and as the curable compound, a radical polymerization The use of photocurable compounds such as thermosetting monomers and thermosetting compounds such as epoxy compounds and oxetane compounds is disclosed.

Japanese Patent Application Publication No. 2014-220372

Japanese Patent Application Publication No. 2014-237814

However, with the curable resin compositions disclosed in Patent Documents 1 and 2, high bonding strength cannot be obtained, and there is a possibility that the reliability of the semiconductor device may be reduced. Among reliability, reflow resistance in particular deteriorates, and there is a risk that peeling may occur in a subsequent process.

An object of the present invention is to provide a method for manufacturing a semiconductor device that can improve the reliability of the semiconductor device.

In order to solve the above-mentioned problems, a first invention is a method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed by a cured resin layer, the method comprising: Steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting properties and a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring board or the second semiconductor chip. , a step of discharging from an inkjet nozzle to form a curable resin composition layer;
(B) irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) laminating the first semiconductor chip and the wiring board or the second semiconductor chip by pressing the electrode formation surface of the first semiconductor chip onto the semi-cured resin layer; and ( D) a step of heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) Alicyclic epoxy compound ;
(b) In order to cure (a), a cationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1);
(c) a carboxyl group-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) in order to further cure (a), it is a sulfonium borate complex and contains a thermal cationic polymerization initiator represented by the following formula (3),
The method for manufacturing a semiconductor device includes the component (c) contained in an amount of 0.5 parts by mass or more and 25 parts by mass or less based on 100 parts by mass of the component (a).

A second invention is a method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed together using a cured resin layer, the method comprising the following steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting properties and a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring board or the second semiconductor chip. , a step of discharging from an inkjet nozzle to form a curable resin composition layer;
(B) irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) laminating the first semiconductor chip and the wiring board or the second semiconductor chip by pressing the electrode formation surface of the first semiconductor chip onto the semi-cured resin layer; and ( D) a step of heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) Alicyclic epoxy compound ;
(b) In order to cure (a), a cationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1);
(c) Carboxyl-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) A semiconductor device containing a thermal cationic polymerization initiator that is a sulfonium borate complex and is represented by the following formula (3) in order to further harden (a). This is a manufacturing method.

According to the present invention, since the curable resin composition includes (a) a cationically polymerizable monomer, (b) a photocationic polymerization initiator, and (c) an acrylonitrile copolymer that is liquid at room temperature, the first semiconductor chip The reliability of the semiconductor device can be improved by further increasing the bonding strength between the wiring board and the wiring board or the second semiconductor chip.

FIG. 1 is a cross-sectional view showing the configuration of a semiconductor device obtained by the method for manufacturing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of a semiconductor device obtained by the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

<First embodiment>
[Semiconductor device configuration]
First, with reference to FIG. 1, the configuration of a semiconductor device 10 obtained by the method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described. This semiconductor device 10 includes a wiring board 11 and a semiconductor chip 13 fixed onto the wiring board 11 with a cured resin layer 12. The semiconductor chip 13 is electrically connected to the wiring board 11 by bonding wires 13a. The cured resin layer 12, the semiconductor chip 13, and the bonding wires 13a provided on the wiring board 11 may be sealed with a sealing resin (not shown).

[Composition of curable resin composition]
The cured resin layer 12 is formed by curing the curable resin composition according to the first embodiment of the present invention. This curable resin composition is coated by an inkjet method, is photocurable and thermocurable, and contains the following components (a) to (c). In addition to the above components (a) to (c), the curable resin composition may further contain the following component (d).

<Component (a)>
Component (a) is a cationically polymerizable monomer. This monomer is preferably an alicyclic epoxy compound from the viewpoint of improving the curing speed of the curable resin composition. The alicyclic epoxy compound is preferably monofunctional or difunctional. This is because trifunctional or higher functional alicyclic epoxy compounds may cause the viscosity of the curable resin composition to become too high, resulting in poor applicability. A monofunctional alicyclic epoxy compound or a bifunctional alicyclic epoxy compound may be used alone, or a monofunctional alicyclic epoxy compound and a bifunctional alicyclic epoxy compound may be used in combination. good.

Examples of monofunctional alicyclic epoxy compounds include 1,2-epoxy-4-vinylcyclohexane (manufactured by Daicel Corporation, Celloxide 2000), 4-vinylepoxycyclohexane, dioctyl epoxyhexahydrophthalate, and epoxyhexahydrophthalate. Examples include di-2-ethylhexyl acid. These may be used alone or in combination. Examples of the bifunctional alicyclic epoxy compound include (3,3',4,4'-diepoxy)bicyclohexyl (Celoxide 8000, manufactured by Daicel Corporation), 3,4-epoxycyclohexylmethyl-3,4- Epoxycyclohexane carboxylate (manufactured by Daicel Corporation, Celloxide 2021P), 3,4-epoxycyclohexyl octyl-3,4-epoxycyclohexane carboxylate, 2-(3,4-epoxycyclohexyl-5,5-spiro-3,4) -epoxy)cyclohexane-meta-dioxane, bis(3,4-epoxycyclohexylmethyl)adipate, vinylcyclohexene dioxide, bis(3,4-epoxy-6-methylcyclohexylmethyl)adipate, 3,4-epoxy-6- Methylcyclohexyl-3,4-epoxy-6-methylcyclohexanecarboxylate, methylenebis(3,4-epoxycyclohexane), dicyclopentadiene diepoxide, ethylene glycol di(3,4-epoxycyclohexylmethyl)ether, ethylenebis(3,4-epoxycyclohexylmethyl)ether , 4-epoxycyclohexanecarboxylate), 1,2,8,9-diepoxylimonene, and the like. These may be used alone or in combination.

<Component (b)>
Component (b) is a photocationic polymerization initiator. The photocationic polymerization initiator is preferably a sulfonium borate complex. When using a UV-LED as a light source, the sulfonium borate complex should be tris(4-(4-acetylphenyl)thiophenyl)sulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (1). is preferred.

Photocationic polymerization initiators, such as sulfonium borate complexes, act as thermosetting agents after irradiation with UV light. Therefore, even if the thermal cationic polymerization initiator as component (d) is not added to the curable resin composition, the semi-cured curable resin composition can be thermally cured by irradiation with UV light. .

<Component (c)>
Component (c) is an acrylonitrile copolymer that is liquid at room temperature. The acrylonitrile copolymer is, for example, at least one of acrylonitrile-butadiene rubber (NBR) represented by the following formula (4), a product obtained by modifying it, and a CTBN-modified epoxy resin.

Since the acrylonitrile moiety of the acrylonitrile copolymer exhibits weak basicity, when added to a cationic polymerization curing system, it causes weak curing inhibition during the curing reaction. This curing inhibition suppresses the progress of curing due to dark reaction after UV irradiation during B-staging by UV light. Therefore, it is possible to control the surface tack of the semi-cured resin layer. Note that the semi-cured resin layer will be explained in "Method for manufacturing a semiconductor device" below.

It is preferable that the acrylonitrile copolymer is added in an amount of 0.5 parts by mass or more and 25 parts by mass or less with respect to 100 parts by mass of the cationically polymerizable monomer. If the amount of the acrylonitrile copolymer is less than 0.5 parts by mass, curing of the semi-cured resin layer may proceed after UV light irradiation, and the surface tackiness of the semi-cured resin layer may deteriorate. On the other hand, if the acrylonitrile copolymer exceeds 25 parts by mass, curing inhibition will be so strong that curing will not proceed sufficiently after UV light irradiation, and there is a risk that uniform chip mounting will not be possible. Moreover, the viscosity of the curable resin composition at 25° C. becomes too high, and there is also a possibility that the coatability by inkjet printing may deteriorate.

The amount of acrylonitrile in the acrylonitrile copolymer is preferably 10 mol% or more and 30 mol% or less in one molecule. If the amount of acrylonitrile in one molecule is less than 10 mol %, curing of the semi-cured resin layer will proceed after UV light irradiation, and there is a possibility that the surface tackiness of the semi-cured resin layer may deteriorate. On the other hand, if the amount of acrylonitrile exceeds 30 mol % in one molecule, curing inhibition will be so strong that curing will not proceed sufficiently after UV light irradiation, and there is a possibility that uniform chip mounting will not be possible. Moreover, the viscosity of the curable resin composition at 25° C. becomes too high, and there is also a possibility that the coatability by inkjet printing may deteriorate.

（但し、式（２）中、Ｒ１は、アラルキル基であり、Ｒ２は低吸アルキル基であり、Ｒ３は水素原子または低吸アルコキシカルボニル基である。Ｘはハロゲン原子であり、ｎは１～３の整数である。）

<Component (d)>
Component (d) is a thermal cationic polymerization initiator. As mentioned above, component (d) is not an essential component, but from the viewpoint of more reliably thermosetting the curable resin composition, it is preferable that the curable resin composition contains component (d). However, from the viewpoint of storage stability of the curable resin composition, it is preferable that the curable resin composition does not contain component (d). Preferably, the thermal cationic polymerization initiator is a sulfonium borate complex. The sulfonium borate complex is triallylsulfonium tetrakis-(pentafluorophenyl)borate represented by the following formula (2), and (4-hydroxyphenyl)dimethylsulfonium=tetrakis(pentafluorophenyl) represented by the following formula (3). Preferably, it is at least one type of fluorophenyl) borate.

(However, in formula (2), R1 is an aralkyl group, R2 is a low alkyl group, and R3 is a hydrogen atom or a low alkoxycarbonyl group. X is a halogen atom, and n is 1 to It is an integer of 3.)

<Other ingredients>
The curable resin composition optionally contains at least one of an adhesion aid such as a coupling agent, conductive particles, a pigment, a dye, a leveling agent, an antifoaming agent, a polymerization inhibitor, and the like. You can stay there.

[Method for manufacturing semiconductor device]
Next, a method for manufacturing a semiconductor device according to the first embodiment of the present invention will be described. This method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a semiconductor chip 13 and a wiring board 11 are fixed together using a cured resin layer 12, and includes the following steps (A1) to (D1).

(Step (A1))
The above curable resin composition is discharged from an inkjet nozzle onto the electrode forming surface of the wiring board 11 to form a curable resin composition layer. The above-mentioned curable resin composition has a viscosity in the range of 10 mPa·s to 100 mPa·s at 25°C. If the viscosity at 25° C. is outside the above range, the coatability of the curable resin composition with an inkjet device will decrease.

(Step (B1))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, B-staging refers to a state in which the film viscosity is within the range of 1000 Pa·s or more and 15000 Pa·s or less. Since the semi-cured resin layer is in a B-stage state, a good surface tackiness can be obtained, allowing uniform chip mounting and improving die shear strength (strength at which the wiring board 11 and the semiconductor chip 13 are broken). do.

(Step (C1))
Next, the electrode forming surface of the semiconductor chip 13 is pressed onto the semi-cured resin layer, and the semiconductor chip 13 and the wiring board 11 are laminated, and the semiconductor chip 13 and the wiring board 11 are electrically connected. form the body.

(Step (D1))
Next, the semi-cured resin layer of the laminate is heat-treated to form a cured resin layer 12. Next, the semiconductor chip 13 is electrically connected to the wiring board 11 by bonding wires 13a.

[effect]
The curable resin composition according to the first embodiment contains a cationically polymerizable monomer as component (a), a photocationic polymerization initiator as component (b), and an acrylonitrile copolymer as component (c). . By applying this curable resin composition to the semiconductor manufacturing method comprising the above steps (A1) to (D1), the bonding strength between the semiconductor chip 13 and the wiring board 11 can be increased. Therefore, reliability of the semiconductor device can be improved. Furthermore, takt time can be shortened and semiconductor devices can be manufactured efficiently. Furthermore, it is also possible to improve the thickness accuracy of the connection portion of the semiconductor device.

<Second embodiment>
[Semiconductor device configuration]
First, with reference to FIG. 2, the configuration of a semiconductor device 10A obtained by a method for manufacturing a semiconductor device according to a second embodiment of the present invention will be described. This semiconductor device 10A further includes a semiconductor chip 15 fixed onto the semiconductor chip 13 by a cured resin layer 14. Note that in the second embodiment, the same parts as in the first embodiment are given the same reference numerals, and the description thereof will be omitted.

The semiconductor chip 15 is electrically connected to the wiring board 11 by bonding wires 15a. The cured resin layers 12 and 14, the semiconductor chips 13 and 15, and the bonding wires 13a and 15a provided on the wiring board 11 may be sealed with a sealing resin (not shown).

[Method for manufacturing semiconductor device]
Next, a method for manufacturing a semiconductor device according to a second embodiment of the present invention will be described. This method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device in which a semiconductor chip 13 and a wiring board 11 are fixed together using a cured resin layer 12, and a semiconductor chip 15 and a semiconductor chip 13 are fixed together using a cured resin layer 14. In addition to the steps (A1) to (D1) of the first embodiment, the following steps (A2) to (D2) are further provided.

(Step (A2))
After the above steps (A1) to (D1), a curable resin composition is discharged from an inkjet nozzle onto the electrode forming surface of the semiconductor chip 13 to form a curable resin composition layer. The curable resin composition is the same as the curable resin composition according to the first embodiment.

(Step (B2))
Next, the curable resin composition layer is irradiated with light to form a B-staged semi-cured resin layer. Here, B-staging refers to a state in which the film viscosity is within the range of 1000 Pa·s or more and 15000 Pa·s or less. Since the semi-cured resin layer is in a B-staged state, a good surface tackiness can be obtained, allowing uniform chip mounting and improving die shear strength (strength at which the semiconductor chips 13 and 15 are broken).

(Step (C2))
Next, the semiconductor chips 13 and 15 are stacked by pressing the electrode forming surface of the semiconductor chip 15 onto the semi-cured resin layer, thereby forming a stack in which the semiconductor chips 13 and 15 are electrically connected.

(Step (D2))
Next, the semi-cured resin layer of the laminate is heat-treated to form a cured resin layer 14. Next, the semiconductor chip 15 is electrically connected to the wiring board 11 by bonding wires 15a.

[effect]
In the method for manufacturing a semiconductor device according to the second embodiment, a curable resin composition is applied to a method for manufacturing a semiconductor comprising the above steps (A1) to (D1) and steps (A2) to (D2). , the reliability of the semiconductor device 10A can be improved by further increasing the bonding strength between the semiconductor chip 13 and the wiring board 11 and between the semiconductor chip 13 and the semiconductor chip 15.

[Modified example]
In the second embodiment described above, the configuration in which two semiconductor chips 13 and 15 are stacked on the wiring board 11 was explained as an example, but the configuration in which three or more semiconductor chips are stacked on the wiring board is also described. Good too. In this case, a cured resin layer is provided between each semiconductor chip. This cured resin layer is formed in the same manner as the cured resin layer 14 in the second embodiment described above.

EXAMPLES Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples.

Table 1 shows the materials used in this example and comparative example.

[Examples 4 to 6, Reference Examples 1 to 3, 7 to 10, Comparative Examples 1 to 3]
(Step (A1))
First, each material was weighed and put into a plastic container so as to have the composition shown in Tables 2 and 3. After uniformly mixing in a rotation and revolution mixer, the curable resin was filtered through a 5 μm filter. A composition (adhesive) was prepared. Next, place the semiconductor chip on the FR4 glass epoxy substrate (thickness 1 mm) using an inkjet device (heated to 50°C, use a Toshiba Tec head manufactured by Toshiba Tec Co., Ltd.) so that the size of the semiconductor chip is 10 x 10 mm. A curable resin composition was applied to a thickness of 20 μm using a UV-LED (365 nm) light source (a UV-LED (365 nm) light source was installed) to form a curable resin composition layer.

(Step (B1))
Next, as shown in Tables 2 and 3, the curable resin composition layer immediately after application is photocured by irradiating UV-LED light so that the cumulative light amount is in the range of 50 to 3000 mJ/ ^cm2 . As a result, a B-staged semi-cured resin layer was formed.

(Step (C1))
Next, a silicon bare chip shaped like a semiconductor chip (3.3 x 3.3 mm, thickness 0.4 mm) was laminated on the semi-cured resin layer using a die bonding device to obtain a laminate.

(Step (D1))
Next, the obtained laminate was placed in an oven at 160° C. for 1 hour to thermally cure the B-staged semi-cured resin layer, thereby forming a cured resin layer. Through the above steps, the desired semiconductor device (layered structure) was manufactured.

[evaluation]
The following evaluations were performed on the curable resin compositions prepared in Examples 4 to 6, Reference Examples 1 to 3, 7 to 10, and Comparative Examples 1 to 3, and the semiconductor devices produced.

(viscosity)
The initial viscosity of the curable resin composition at 25°C and the viscosity of the curable resin composition upon heating at 50°C were measured using a rheometer (manufactured by HAAKE). C35/1 was used as the rotor, and the viscosity was measured at a shear rate of 100 (1/s).

(Viscosity stability after heating)
The viscosity stability of the curable resin composition after heating was determined as follows. First, the initial viscosity of the curable resin composition at 25° C. was measured using a rheometer (manufactured by HAAKE). Next, after leaving the curable resin composition in an oven at 50° C. for 24 hours, the viscosity was measured again using a rheometer (manufactured by HAAKE). Next, based on the measured viscosity before and after heating, the viscosity stability after heating was determined based on the following criteria. Note that C35/1 was used as the rotor, and the viscosity was measured under the condition of a shear rate of 100 (1/s).
○: The viscosity after heating is less than 1.1 times the initial viscosity. △: The viscosity after heating is 1.1 times or more and less than 1.5 times the initial viscosity. ×: The viscosity after heating is 1.5 times or more of the initial viscosity

(Applicability of inkjet device)
After discharging the curable resin composition using a Toshiba Tec head (on-demand piezo system, 636ch head, 300 dpi) to form a curable resin composition layer, observe the surface condition of the curable resin composition layer. The coating properties (ejection stability) of the inkjet device were evaluated based on the following criteria.
○: Uniform surface condition with no uneven coating or chipping △: Unevenness or chipping exists in a part of the coating film ×: Unevenness or chipping exists on the entire surface of the coating film

(Film viscosity of B-staged semi-cured resin layer)
The film viscosity of the B-staged semi-cured resin layer was measured in a pseudo manner as follows using a rheometer MARS (manufactured by HAAKE). First, a measurement sensor PP8 with a diameter of φ8 mm and a plate TMP8 were attached to a rheometer, and zero point adjustment was performed. Next, the plate was removed, and one drop of the curable resin composition used in Reference Examples 1, 9, and 10 and Comparative Examples 1 to 3 was dropped onto the measurement area on the plate using a dropper. Next, by irradiating the dropped curable resin composition with UV-LED light of the same cumulative light intensity as that irradiated in Reference Examples 1, 9, 10, and Comparative Examples 1 to 3, the B-stage was obtained. A semi-cured resin layer was formed. Next, the plate on which the semi-cured resin layer was formed was attached to a rheometer, and the viscosity of the semi-cured resin layer was measured under the conditions of a gap of 0.2 mm, a temperature of 25°C, and an oscillation mode (pressure of 1000 Pa, frequency of 1 Hz). did. Note that in the curable resin compositions used in Comparative Examples 1 and 3, the film viscosity could not be measured because the curable resin compositions were cured by irradiation with UV-LED light.

(B stage state after UV curing)
After irradiating the curable resin composition coated with an inkjet device with UV-LED light, its surface condition was evaluated based on the following criteria.
●: There is no tackiness on the surface, making it difficult to attach silicone bare chips. ○: There is enough tackiness to attach silicone bare chips. △: There is a slimy component (low viscosity component), making it difficult to attach silicone bare chips. Cured composition layer flows ×: Hardly cured

(Die shear strength/initial)
The initial die shear strength of the fabricated semiconductor device was measured at room temperature using Die Shear Tester 4000 (manufactured by DAGE). This measurement was performed on five semiconductor devices, and the average value of die shear strength was determined.

(Reflow resistance (die shear strength/after reflow))
The reflow resistance of the semiconductor device was determined as follows. The initial die shear strength of the fabricated semiconductor device was measured at room temperature using Die Shear Tester 4000 (manufactured by DAGE). Further, after passing the manufactured semiconductor device through an IR reflow oven (Max 260° C.) three times, the die shear strength was measured again using a die shear tester 4000 (manufactured by DAGE). Based on the die shear strength before and after the reflow test measured as described above, reflow resistance was determined based on the following criteria.
○: The die shear strength after reflow treatment is 90% or more of the initial die shear strength. △: The die shear strength after reflow treatment is 70% or more and less than 90% of the initial die shear strength. ×: After the reflow treatment. The die shear strength is less than 70% of the initial die shear strength

Tables 2 and 3 show the formulation and evaluation results of the curable resin compositions of Examples 4 to 6, Reference Examples 1 to 3, 7 to 10, and Comparative Examples 1 to 3.

The above evaluation reveals the following.
In Examples 4 to 6, Reference Examples 1 to 3, and 7 to 10, which contained an appropriate amount of acrylonitrile copolymer, it was possible to leave an appropriate surface tack after UV irradiation, resulting in good chip mounting, both at the initial stage and after reflow. The die shear strength of is increased. In addition, a low-viscosity curable resin composition with stable film viscosity and capable of inkjet coating can be obtained.
In Comparative Example 1 which did not contain an acrylonitrile copolymer and Comparative Example 3 which added a copolymer which did not contain acrylonitrile, curing progressed after UV irradiation, surface tack disappeared, and uniform chip mounting was not possible. Die shear strength also decreases. In Comparative Example 2, in which the amount of acrylonitrile copolymer added is too large, the curing inhibition is so strong that the curing after UV irradiation does not proceed sufficiently, making it impossible to uniformly mount the chip. Furthermore, the viscosity of the curable resin composition increases, and inkjet applicability also deteriorates.

Although the embodiments and examples of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments and examples, and various modifications based on the technical idea of the present invention are possible. It is.

For example, the configurations, methods, processes, shapes, materials, numerical values, etc. mentioned in the above-mentioned embodiments and examples are merely examples, and different configurations, methods, processes, shapes, materials, numerical values, etc. may be used as necessary. may also be used.

Moreover, the configurations, methods, processes, shapes, materials, numerical values, etc. of the above-described embodiments and examples can be combined with each other without departing from the gist of the present invention.

10, 10A semiconductor device 11 wiring board 12, 14 cured resin layer 13, 15 semiconductor chip 13a, 15a bonding wire

Claims (3)

A method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed together using a cured resin layer, the method comprising the following steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting properties and a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring board or the second semiconductor chip. , a step of discharging from an inkjet nozzle to form a curable resin composition layer;
(B) irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) laminating the first semiconductor chip and the wiring board or the second semiconductor chip by pressing the electrode formation surface of the first semiconductor chip onto the semi-cured resin layer; and ( D) a step of heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) Alicyclic epoxy compound ;
(b) A cationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1) in order to cure the above (a);
(c) a carboxyl group-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) in order to further cure the above (a), it is a sulfonium borate complex and contains a thermal cationic polymerization initiator represented by the following formula (3),
A method for manufacturing a semiconductor device, wherein the component (c) is contained in an amount of 0.5 parts by mass or more and 25 parts by mass or less based on 100 parts by mass of the component (a).

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the amount of acrylonitrile in the carboxyl group-terminated butadiene nitrile rubber is 10 mol% or more and 30 mol% or less in one molecule. A method for manufacturing a semiconductor device in which a first semiconductor chip and a wiring board or a second semiconductor chip are fixed together using a cured resin layer, the method comprising the following steps (A) to (D):
(A) A curable resin composition having photocurability and thermosetting properties and a viscosity of 10 mPa·s or more and 100 mPa·s or less at 25° C. is applied to the electrode forming surface of the wiring board or the second semiconductor chip. , a step of discharging from an inkjet nozzle to form a curable resin composition layer;
(B) irradiating the curable resin composition layer with UV-LED light as a light source to form a B-staged semi-cured resin layer;
(C) laminating the first semiconductor chip and the wiring board or the second semiconductor chip by pressing the electrode formation surface of the first semiconductor chip onto the semi-cured resin layer; and ( D) a step of heat-treating the semi-cured resin layer to form a cured resin layer;
The curable resin composition contains the following components (a) to (d):
(a) Alicyclic epoxy compound ;
(b) A cationic polymerization initiator which is a sulfonium borate complex and is represented by the following formula (1) in order to cure the above (a);
(c) a carboxyl group-terminated butadiene nitrile rubber that is liquid at room temperature; and (d) a semiconductor containing a thermal cationic polymerization initiator that is a sulfonium borate complex and is represented by the following formula (3) in order to further cure the above (a). Method of manufacturing the device.

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