JP2022099212A5

JP2022099212A5 -

Info

Publication number: JP2022099212A5
Application number: JP2020220051A
Authority: JP
Filing date: 2020-12-22
Publication date: 2023-11-20

Description

２方向切替スイッチ９を図内下方側に倒し、
４Ｘ４マトリックス・スイッチ１０については下記の接続順で発生するホール起電力を測定する。
１）Ｗ１１とＷ４２を短絡して金属針３４と３５間に電流源３１によって電流を流し、Ｗ２３とＷ３４を短絡することで電圧計３２によって金属針３３と３６間に発生するホール起電力Ｖ３６を計測する。
更に、金属針の位置的な誤差によって生じるオフセット電圧を除去するために、電流を逆
方向に流して平均化する必要があるため、下記の接続で再度測定する。
２）Ｗ４１とＷ１２を短絡して金属針３４と３５間に電流源３１によって逆方向に電流を流し、Ｗ２３とＷ３４を短絡することで電圧計３２によって金属針３３と３６間に発生するホール起電力Ｖ６３を計測する。
Ｖ６３とＶ３６の差を取り、１／２を掛けてオフセット電圧を除去して正確なホール起電力を導出することができる。 Push the two-way selector switch 9 downward in the figure,
Regarding the 4×4 matrix switch 10, the Hall electromotive force generated in the following connection order is measured.
1) By short-circuiting W11 and W42 and flowing a current between the metal needles 34 and 35 by the current source 31, and shorting W23 and W34, the Hall electromotive force V36 generated between the metal needles 33 and 36 is detected by the voltmeter 32. measure.
Furthermore, in order to remove the offset voltage caused by the positional error of the metal needle, it is necessary to flow the current in the opposite direction and average it, so the measurement is performed again with the following connection.
2) By shorting W41 and W12 and passing a current in the opposite direction between the metal needles 34 and 35 by the current source 31, and shorting W23 and W34, the voltmeter 32 detects the hole generated between the metal needles 33 and 36. Measure electric power V63.
An accurate Hall electromotive force can be derived by taking the difference between V63 and V36 and multiplying by 1/2 to remove the offset voltage.

上記の測定法は、無論、電流源の方向を逆にして平均化することで測定精度を高めることが出来る。以上、金属針列１を軸に説明したが、また、金属針列２と１を交代して、直交する方向で測定を行うことや、印加磁場の方向を逆にして同様の手順で測定を行うことで、より一層、測定精度を高めることが出来る。このように、本実施例は４端子法によって予めシート抵抗を知ることが出来ることから、ＧａＮ／ＡｌＧａＮヘテロ接合における二次元電子ガスのキャリア移動度やキャリア濃度の測定が簡略化されるものである。
なお、原理的に電圧Ｖ _Ｈの測定では最内側２本の金属針のみを用いれば良いが、金属針列２と金属針列１を交代させ、被測定物の直交する方向の移動度も測定できる。
なお、金属針列１と金属針列２に対して、実施例５で使用する測定プラットフォームを２回適用し、電圧計を２個用いて、実施できることは言うまでもない。 Of course, the measurement accuracy of the above measurement method can be improved by reversing the direction of the current source and averaging. The above explanation has been based on metal needle row 1, but it is also possible to alternate metal needle rows 2 and 1 and perform measurements in orthogonal directions, or to perform measurements in the same manner with the direction of the applied magnetic field reversed. By doing so, the measurement accuracy can be further improved. In this way, in this example, the sheet resistance can be known in advance using the four-terminal method, which simplifies the measurement of the carrier mobility and carrier concentration of the two-dimensional electron gas in the GaN/AlGaN heterojunction. .
In principle, it is sufficient to use only the two innermost metal needles to measure the voltage VH, but it is also possible to alternate the metal needle row 2 and metal needle row 1 and measure the mobility of the object to be measured in the orthogonal direction _. can.
It goes without saying that the measurement platform used in Example 5 can be applied twice to the metal needle row 1 and the metal needle row 2, and the measurement can be carried out using two voltmeters.

Claims

A metal needle connected to two electrodes of a ceramic piezoelectric element is brought into contact with a semiconductor or a conductive thin film, and a high voltage and a minute current are applied to the metal needle by applying stress or impact to the piezoelectric element. A method of forming electrical contact between a metal needle and a semiconductor or conductive thin film.

A metal needle connected to two electrodes of a ceramic piezoelectric element is brought into contact with a semiconductor or a conductive thin film, and a high voltage and a small current are applied to the metal needle by applying stress or impact to the piezoelectric element, and then the piezoelectric element is A method of forming electrical contact between a metal needle and a semiconductor or conductive thin film by applying a high voltage and a minute current to the metal needle by inverting the electrode and applying stress or blows to the element multiple times.

Four metal needles arranged in a straight line and at equal intervals are brought into contact with a semiconductor or a conductive thin film, and the ceramic piezoelectric elements described in claims 1 and 2 are connected to the two outermost metal needles, as claimed in claim 1. After forming electrical contact with the semiconductor or conductive thin film using the methods described in 1 and 2, connect a current source to the two outermost metal needles and measure the voltage between the two innermost metal needles. A measuring device characterized in that the sheet resistance of the semiconductor or conductive thin film is measured by:

For a semiconductor or conductive thin film in contact with four metal needles placed at the vertices of a quadrilateral, electrical contact is made to all four metal needles by the method described in claims 1 and 2. A magnetic field is applied to the semiconductor or conductive thin film from the normal direction, a current source is connected to two diagonal metal needles, and the voltage between the two metal needles in the orthogonal direction is measured. Hall effect measuring device.

The method according to claims 1 and 2, comprising a Schottky junction or MIS (metal-insulator-semiconductor) junction region formed on a semiconductor substrate, and a plurality of metal needles outside the region in contact with the semiconductor substrate. A semiconductor characterized in that capacitance/voltage characteristics (CV characteristics) are measured between an electrode with which an electrical contact is formed and an electrode that is in contact with a Schottky junction or an MIS (metal-insulator-semiconductor) junction region. Characteristic measuring device.

An electrical property measuring device according to any one of claims 1, 2, 3, 4, and 5, characterized in that a component for forming an electrical contact using a ceramic piezoelectric element and a connection switching unit are used in common.

A row of four metal needles 1 arranged linearly and at equal intervals ,
Similar four metal needle rows 2 arranged orthogonally to the four metal needle rows 1 ;
a current source connected to the outermost two of the four metal needle rows 1 ;
a voltage Vs measurement unit that measures the voltage Vs of the two innermost metal needles of the four metal needle rows 1 ;
a voltage V _H measurement unit that applies a magnetic field B perpendicularly to the semiconductor or conductive thin film and measures the voltage V _H of the innermost two metal needles of the four metal needle rows 2;
Equipped with
Constructing a regular quadrilateral using the innermost two metal needles of the four metal needle rows 1 and the innermost two metal needles of the four metal needle rows 2,
Electrical contacts are formed on the four metal needle rows 1 and the four metal needle rows 2,
A Hall effect measuring device characterized in that carrier mobility is determined from voltage Vs, voltage _VH , and magnetic field B.