JP2022098724A - Optical semiconductor device and manufacturing method therefor - Google Patents

Abstract

To provide an optical semiconductor element capable of achieving long service life.SOLUTION: An optical semiconductor device 10 includes: an optical semiconductor element 12; an enclosure 14 which defines a light source chamber 24 storing the optical semiconductor element 12 and has an opening at the front face of the optical semiconductor element 12; a window member 16 provided to cover the opening; a window fixing member 18 which is mounted on the enclosure 14 and sandwiches the window member 16 with the enclosure 14 for fixing; and a first seal member 20 which seals the portion between the enclosure 14 and the window member 16. The light source chamber 24 can be sealed.SELECTED DRAWING: Figure 1

Description

The present invention relates to an optical semiconductor device and a method for manufacturing an optical semiconductor device.

The opto-semiconductor device is housed in a package for protecting the device from the external environment. In the case of a nitride semiconductor, it is known that deterioration of the semiconductor layer can be suppressed by sealing it in an atmospheric gas containing oxygen. A method has been proposed in which oxygen is sealed in a package and the effect of oxidation of the metal material bonded between the package and the window member during bonding is suppressed (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2018-093137

In order to extend the life of the opto-semiconductor device, it is preferable to enclose a high concentration (for example, 20% or more) of oxygen in the package. However, when it is attempted to enclose a high concentration of oxygen in the package, it is difficult to prevent oxidation of the metal material that joins between the package and the window member.

The present invention has been made in view of these problems, and an object of the present invention is to provide a technique for extending the life of an optical semiconductor device.

The optical semiconductor device of one aspect of the present invention is provided so as to partition the optical semiconductor element and the light source chamber in which the optical semiconductor element is housed, and to provide a housing having an opening in the front surface of the optical semiconductor element and to close the opening. It includes a window member, a window fixing member attached to the housing and sandwiching and fixing the window member between the housing, and a sealing member that seals between the housing and the window member. The light source chamber can be sealed.

Another aspect of the present invention is a method for manufacturing an optical semiconductor device. In this method, the step of accommodating the optical semiconductor element in the light source chamber so that the opening provided in the housing for partitioning the light source chamber is located in front of the optical semiconductor element, the window member closing the opening, and the window member are housing. A step of sealing the opening using a window fixing member that is sandwiched and fixed between the housing and a sealing member that seals between the housing and the window member, and a gas exchange hole provided in the housing in the light source chamber. It includes a step of exchanging atmospheric gas and a step of sealing the gas exchange hole.

According to an aspect of the present invention, the life of an optical semiconductor device can be extended.

It is sectional drawing which shows schematic the structure of the optical semiconductor device which concerns on embodiment. It is a top view which shows the structure of the optical semiconductor device of FIG. 1 schematically. It is a bottom view which shows the structure of the optical semiconductor device of FIG. 1 schematically. It is a graph which shows the relationship between the oxygen concentration contained in an atmospheric gas, and the light output change of an optical semiconductor element. It is a flowchart which shows the manufacturing method of the optical semiconductor device which concerns on embodiment.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description, the same elements are designated by the same reference numerals, and duplicate description will be omitted as appropriate. Also, to aid in understanding the description, the dimensional ratio of each component in each drawing does not necessarily match the actual dimensional ratio.

FIG. 1 is a diagram schematically showing a configuration of an optical semiconductor device 10 according to an embodiment. The optical semiconductor device 10 includes an optical semiconductor element 12, a housing 14, a window member 16, a window fixing member 18, and a first seal member 20.

The light source chamber 24 in which the optical semiconductor element 12 is housed is sealed by a housing 14, a window member 16, a window fixing member 18, and a first seal member 20. In the present embodiment, by sealing the light source chamber 24 with a sealing member such as an O-ring, it becomes easy to enclose a high concentration (for example, 20% or more) of oxygen as an atmospheric gas in the light source chamber 24. By enclosing a high concentration of oxygen in the light source chamber 24, it is possible to suppress the deterioration of performance due to the use of the optical semiconductor element 12, and it is possible to realize a long life of the optical semiconductor element 12.

In the drawings, the thickness direction of the window member 16 is the z direction, and the directions orthogonal to the z direction are the x direction and the y direction. Regarding the direction in the z direction, the + z direction from the optical semiconductor element 12 toward the window member 16 may be referred to as the front side, and the −z direction opposite to the front side may be referred to as the back side. Further, the direction in which the main body portion 14a and the extension portion 14b of the housing 14 are adjacent to each other is the x direction. The main body portion 14a is a portion to which the window fixing member 18 is attached, and is a portion where the housing 14 and the window fixing member 18 overlap in the z direction. The extension portion 14b is a portion where the housing 14 and the window fixing member 18 do not overlap in the z direction.

The optical semiconductor device 12 contains a nitride semiconductor material and is represented by the composition of In _{1-xy Al x} Gay N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1,). Includes GaN-based semiconductor materials. The optical semiconductor device 12 is, for example, an LED (Light Emitting Diode) chip configured to output deep ultraviolet light having a wavelength of 360 nm or less. The optical semiconductor device 12 includes an active layer made of aluminum nitride gallium (AlGaN) having a bandgap of about 3.4 eV or more.

The optical semiconductor device 12 is housed in a light source chamber 24 partitioned by a housing 14. The optical semiconductor element 12 is arranged so that the window member 16 is located on the front surface of the optical semiconductor element 12. The output light of the optical semiconductor element 12 is taken out of the light source chamber 24 through the first opening 26 provided in the housing 14, the window member 16, and the second opening 28 provided in the window fixing member 18. The optical semiconductor element 12 is provided on the substrate 30. In the illustrated example, a plurality of optical semiconductor elements 12 are provided on the substrate 30. The plurality of optical semiconductor elements 12 are arranged in a two-dimensional array on the substrate 30, for example. Only one optical semiconductor device 12 may be provided on the substrate 30.

The housing 14 includes a first member 32 and a second member 34. The light source chamber 24 is partitioned between the first member 32 and the second member 34. The first member 32 and the second member 34 are made of a metal material such as stainless steel or aluminum. At least one of the first member 32 and the second member 34 may be made of a resin material.

The first member 32 is arranged on the front surface side of the optical semiconductor element 12 and has a first opening 26. The first opening 26 is a circular opening. The second member 34 is arranged on the back surface side of the optical semiconductor element 12. The second member 34 has a heat dissipation mechanism 36 for cooling the optical semiconductor element 12. The heat dissipation mechanism 36 has, for example, a heat sink. The heat dissipation mechanism 36 is air-cooled or water-cooled outside the light source chamber 24. The substrate 30 is attached to the upper surface 38 of the heat dissipation mechanism 36 and is thermally connected to the heat dissipation mechanism 36. The upper surface 38 of the heat dissipation mechanism 36 is exposed inside the light source chamber 24.

The window member 16 is provided so as to close the first opening 26 of the housing 14. The window member 16 is sandwiched and fixed between the housing 14 and the window fixing member 18. The window member 16 is a disk-shaped member. The window member 16 is made of a material that transmits deep ultraviolet light output from the optical semiconductor element 12, and is made of, for example, quartz glass (SiO ₂ ) or sapphire (Al ₂ O ₃ ).

The window fixing member 18 is attached to the housing 14, and the window member 16 is sandwiched and fixed between the housing 14 and the window fixing member 18. The window fixing member 18 has a second opening 28 through which deep ultraviolet light output from the optical semiconductor element 12 passes. The second opening 28 is a circular opening, and is, for example, the same size as the first opening 26. The window fixing member 18 is made of a fluororesin material such as polytetrafluoroethylene (PTFE) or polyvinylidene fluoride (PVDF). The window fixing member 18 may be made of a metal material such as stainless steel or aluminum.

The first seal member 20 is provided between the housing 14 and the window member 16 and seals between the housing 14 and the window member 16. The first seal member 20 is, for example, an O-ring and is composed of fluororubber such as vinylidene fluoride rubber (FKM), tetrafluoroethylene-propylene rubber (FEPM), and tetrafluoroethylene-purple olovinyl ether rubber (FFKM). Will be done. The first sealing member 20 may be a gasket made of rubber or a metal material.

The optical semiconductor device 10 may further include a second seal member 22. The second seal member 22 is provided between the window member 16 and the window fixing member 18, and seals between the window member 16 and the window fixing member 18. Like the first seal member 20, the second seal member 22 may be an O-ring made of fluororubber or a gasket made of rubber or a metal material. The optical semiconductor device 10 does not have to include the second seal member 22.

The housing 14 has a main body portion 14a and an extension portion 14b. The main body portion 14a is a portion to which the window fixing member 18 is attached, and is a portion that overlaps the window fixing member 18 in the z direction. The main body 14a is provided with a first opening 26 and a heat dissipation mechanism 36. The extension portion 14b is a portion that does not overlap with the window fixing member 18 in the z direction, and is a portion that extends in the x direction from the main body portion 14a. The extension portion 14b is provided with a gas exchange hole 40 and an external connector 46.

The gas exchange hole 40 is provided in the extension portion 14b and is arranged on the front surface side of the housing 14. The gas exchange hole 40 penetrates the first member 32 and communicates the inside and the outside of the light source chamber 24. The gas exchange hole 40 extends in the z direction. The gas exchange hole 40 is provided to exchange the atmospheric gas in the light source chamber 24 while the window member 16 and the window fixing member 18 are attached to the housing 14. A sealing plug 42 is detachably attached to the inlet of the gas exchange hole 40. By attaching the sealing plug 42 to the inlet of the gas exchange hole 40, the gas exchange hole 40 is closed and the light source chamber 24 is sealed. The sealing plug 42 is composed of, for example, a male screw and engages with a thread cutting structure formed on the inner surface of the gas exchange hole 40. A sealing member 44 such as an O-ring is provided between the housing 14 and the sealing stopper 42.

The atmospheric gas in the light source chamber 24 contains 20% by volume or more of oxygen in order to suppress deterioration of the optical semiconductor element 12, and preferably contains 30% by volume or more of oxygen. The oxygen concentration of the atmospheric gas in the light source chamber 24 may be about 40 to 50% by volume. The atmospheric gas in the light source chamber 24 may contain nitrogen or a noble gas in addition to oxygen. The atmospheric gas in the light source chamber 24 is composed of a dry gas in order to prevent dew condensation in the light source chamber 24. The water concentration of the atmospheric gas in the light source chamber 24 is 0.1% by volume or less, preferably 10 ppm or less or 1 ppm or less. The atmospheric gas in the light source chamber 24 may contain substantially only oxygen and nitrogen. A desiccant (not shown) such as zeolite for adsorbing the moisture in the atmospheric gas may be provided in the light source chamber 24.

The external connector 46 is provided on the extension portion 14b and is arranged on the back surface side of the housing 14. The external connector 46 is inserted into a mounting hole 48 that penetrates the second member 34. The external connector 46 is an electric connector for supplying a control signal and a drive current to the optical semiconductor element 12. The external connector 46 has an external terminal exposed to the outside of the light source chamber 24. The external connector 46 is electrically connected to the optical semiconductor element 12 via the connection cable 52, the internal connector 54, and the substrate 30. The internal connector 54 is provided, for example, on the substrate 30. The connection cable 52 is provided in the light source chamber 24 and electrically connects between the external connector 46 and the internal connector 54.

The window fixing member 18 is fixed to the housing 14 by the first fastening member 56. The first member 32 and the second member 34 are fixed by the first fastening member 56 and the second fastening member 58. The first fastening member 56 and the second fastening member 58 are screws, bolts, and the like. The first fastening member 56 is provided on the main body portion 14a and fixes the first member 32, the second member 34, and the window fixing member 18. The second fastening member 58 is provided on the extension portion 14b and fixes the first member 32 and the second member 34.

FIG. 2 is a top view schematically showing the configuration of the optical semiconductor device 10 of FIG. 1, and shows the configuration on the front side of the optical semiconductor device 10. FIG. 1 shows a cross section taken along line AA of FIG. The window fixing member 18 has a rectangular outer shape with four corners cut or chamfered in the plan view of FIG. The second opening 28 is a circular opening and is provided in the center of the window fixing member 18. The plurality of optical semiconductor elements 12 are arranged in a two-dimensional array in a region overlapping the second opening 28. In the example of FIG. 2, a plurality of optical semiconductor elements 12 are arranged in a triangular lattice pattern.

Similar to the window fixing member 18, the main body portion 14a has a rectangular outer shape with four corners cut or chamfered. The extension portion 14b projects in the x direction from the main body portion 14a and the window fixing member 18. The extension portion 14b has a rectangular outer diameter with chamfered corners in the plan view of FIG. A sealing stopper 42 is attached to the extension portion 14b.

FIG. 3 is a bottom view schematically showing the configuration of the optical semiconductor device 10 of FIG. 1, and shows the configuration of the back side of the optical semiconductor device 10. The first fastening member 56 is attached to the four corners of the main body portion 14a and the like. A second fastening member 58 is attached to the extension portion 14b. A heat dissipation mechanism 36 is provided in the center of the main body portion 14a. An external connector 46 is provided at the center of the extension portion 14b.

FIG. 4 is a graph showing the relationship between the oxygen concentration contained in the atmospheric gas and the time change of the optical output of the optical semiconductor device 12. The vertical axis of the graph shows the rate of change in the optical output of the optical semiconductor element 12, and is based on the optical output at the start of lighting. The horizontal axis of the graph is the lighting time of the optical semiconductor device 12. In each curve B to G of the graph, the volume ratio of the oxygen concentration contained in the atmosphere gas of the optical semiconductor element 12 is different in the range of 0% to 50%. Atmospheric gas contains substantially only nitrogen in addition to oxygen.

As shown in the graph of FIG. 4, it can be seen that the higher the oxygen concentration contained in the atmospheric gas, the slower the rate of decrease in the optical output of the optical semiconductor device 12. In the curve B having an oxygen concentration of 0%, the light output is reduced by about 24% when the time has passed to the right end of the graph. Based on the same elapsed time, the light output is reduced by about 19% on the curve C having an oxygen concentration of 10%, and the light output is reduced by about 13% on the curve D having an oxygen concentration of 20%. On the other hand, in the curve E having an oxygen concentration of 30%, the decrease in light output is about 10%, and in the curve F having an oxygen concentration of 40% and the curve G having an oxygen concentration of 50%, the decrease in light output is about 8%. Therefore, by including 30% or more of oxygen, which is higher than the oxygen concentration (about 21%) contained in the standard atmosphere, in the atmosphere gas, the rate at which the optical output of the optical semiconductor device 12 decreases is significantly delayed. be able to. As a result, the life of the optical semiconductor device 12 can be extended.

Next, a method of manufacturing the optical semiconductor device 10 will be described. FIG. 5 is a flowchart showing a manufacturing method of the optical semiconductor device 10 according to the embodiment. The optical semiconductor element 12, the housing 14, the window member 16, the window fixing member 18, and the first seal member 20 are prepared in advance. Subsequently, the optical semiconductor element 12 is housed in the light source chamber 24 of the housing 14 (S10). The optical semiconductor element 12 is arranged so that the first opening 26 is located on the front surface of the optical semiconductor element 12. The optical semiconductor element 12 may be housed in the light source chamber 24 in a state of being mounted on the substrate 30. The substrate 30 is attached to, for example, the upper surface 38 of the heat dissipation mechanism 36. When the substrate 30 is housed in the light source chamber 24, the connection cable 52 may be used to connect between the external connector 46 and the internal connector 54.

Next, the first opening 26 of the housing 14 is sealed by using the window member 16, the window fixing member 18, and the first seal member 20 (S12). For example, after arranging the first seal member 20, the window member 16, and the window fixing member 18 on the housing 14 in order, the housing 14 and the window fixing member 18 are fixed to each other by using the first fastening member 56. As a result, the first opening 26 is sealed. The second seal member 22 may be arranged between the window member 16 and the window fixing member 18 to seal the space between the window member 16 and the window fixing member 18.

Subsequently, the atmospheric gas in the light source chamber 24 is exchanged through the gas exchange hole 40 (S14). For example, by removing the sealing plug 42 from the gas exchange hole 40 and inserting the nozzle into the gas exchange hole 40, the atmospheric gas is supplied from the nozzle. The atmospheric gas supplied into the light source chamber 24 preferably has an oxygen concentration of 30% by volume or more and a water concentration of 0.1% by volume or less.

Subsequently, the airtightness of the light source chamber 24 is confirmed through the gas exchange hole 40 (S14). For example, the presence or absence of gas leakage can be detected by introducing a high-pressure atmosphere gas from the gas exchange hole 40 into the light source chamber 24 and measuring the pressure of the atmosphere gas at the inlet of the gas exchange hole 40. If a gas leak is detected, that is, if the airtightness is NG (N in S18), the steps S12 to S16 are repeated. In S12, it may be confirmed whether the housing 14, the window member 16, the window fixing member 18, and the first seal member 20 are normal, or the defective parts may be replaced. When gas leakage is not detected in S18, that is, when the airtightness is OK (Y in S18), a sealing plug 42 is attached to the gas exchange hole 40 to seal the gas exchange hole 40 (S20).

According to the present embodiment, since the light source chamber 24 is sealed by the sealing member, it is not necessary to use a heat treatment such as heating and joining the metal material in order to seal the light source chamber 24. When the atmospheric gas enclosed in the light source chamber 24 contains a high concentration of oxygen, the metal material is oxidized when the metal material is heated and attempted to be bonded. When the metal joint is oxidized, the sealing property of the metal joint is deteriorated, and the atmospheric gas cannot be sealed for a long period of time. On the other hand, in the present embodiment, since the space between the housing 14 and the window member 16 can be sealed without using the metal joint portion, high-concentration oxygen can be easily sealed in the light source chamber 24.

According to the present embodiment, since the gas exchange hole 40 is provided in the housing 14, the atmospheric gas in the light source chamber 24 can be easily exchanged after the optical semiconductor device 10 is assembled. If the housing 14 is not provided with a gas exchange hole 40, the step S12 for assembling the optical semiconductor device 10 must be performed in an atmospheric gas containing a high concentration of oxygen. In an environment containing high concentrations of oxygen, fires are more likely to occur than in standard air, so special consideration is required to ensure work safety. On the other hand, according to the present embodiment, since the atmosphere gas containing a high concentration of oxygen is subsequently sealed after assembling the optical semiconductor device 10, the process itself of S12 for assembling the optical semiconductor device 10 is in the standard atmosphere. Can be executed with. As a result, the safety at the time of manufacturing the optical semiconductor device 10 can be enhanced.

According to the present embodiment, by providing the extension portion 14b on the side of the main body portion 14a and providing the gas exchange hole 40 in the extension portion 14b, it is easy to exchange the atmospheric gas after assembling the optical semiconductor device 10. Become. Further, by providing the external connector 46 on the extension portion 14b, a large heat dissipation mechanism 36 can be provided on the main body portion 14a, and the cooling performance of the optical semiconductor element 12 can be improved.

The present invention has been described above based on examples. It is to those skilled in the art that the present invention is not limited to the above-described embodiment, various design changes are possible, various modifications are possible, and such modifications are also within the scope of the present invention. It is about to be understood.

In the above-described embodiment, the case where the gas exchange hole 40 is arranged on the front side of the housing 14 and the external connector 46 is arranged on the back side of the housing 14 is shown. In another embodiment, the gas exchange hole 40 may be arranged on the back side of the housing 14, and the external connector 46 may be arranged on the front side of the housing 14. In addition, both the gas exchange hole 40 and the external connector 46 may be arranged on the front side of the housing 14, or both the gas exchange hole 40 and the external connector 46 may be arranged on the back side of the housing 14. ..

In the above-described embodiment, the case where the housing 14 is composed of the first member 32 and the second member 34 is shown. In another embodiment, the housing 14 may be configured by a member in which the first member 32 and the second member 34 are integrated. Further, the space between the first member 32 and the second member 34 may not be fixed by the first fastening member 56 and the second fastening member 58, but may be fixed by an adhesive or the like. In another embodiment, at least one of the first member 32 and the second member 34 may be composed of two or more members.

In the above-described embodiment, the case where the housing 14 and the window fixing member 18 are fixed by the first fastening member 56 is shown. In another embodiment, the housing 14 and the window fixing member 18 may be fixed with an adhesive.

In the above-described embodiment, the case where the sealing plug 42 is attached to the gas exchange hole 40 to seal the gas is shown. In another embodiment, a sealing valve that opens and closes the gas exchange hole 40 may be provided at the inlet of the gas exchange hole 40.

In the above-described embodiment, the case where the optical semiconductor device 12 is a light emitting device is shown. In another embodiment, the optical semiconductor device 12 may be a light receiving element. The optical semiconductor device 12 may be, for example, a photodiode that receives deep ultraviolet light.

Hereinafter, some aspects of the present invention will be described.

In the first aspect of the present invention, the optical semiconductor element and the light source chamber in which the optical semiconductor element is housed are partitioned, and a housing having an opening in the front surface of the optical semiconductor element and a housing provided so as to close the opening are provided. A window member to be attached, a window fixing member attached to the housing and sandwiching and fixing the window member between the housing, and a sealing member for sealing between the housing and the window member. The light source chamber is an optical semiconductor device that can be sealed. According to the first aspect, since the light source chamber is sealed by the sealing member, it is not necessary to use a heat treatment for heating and joining the metal material at the time of sealing. As a result, it becomes easy to include oxygen in the atmospheric gas of the light source chamber, which may oxidize the metal bonding material and reduce the sealing property.

A second aspect of the present invention is described in the first aspect, wherein the housing has a gas exchange hole for exchanging atmospheric gas in the light source chamber, and the gas exchange hole can be sealed. It is an optical semiconductor device. According to the second aspect, by providing the gas exchange hole, the atmospheric gas in the light source chamber can be exchanged while the window member is attached to the housing, so that the work of enclosing the atmospheric gas in the light source chamber can be facilitated.

A third aspect of the present invention is that the housing has a main body portion that overlaps the window fixing member in the thickness direction of the window member, and an extension portion that extends from the main body portion in a direction orthogonal to the thickness direction. The gas exchange hole is the optical semiconductor device according to the second aspect, which is provided in the extension portion. According to the third aspect, by providing the extension portion on the side of the main body portion and providing the gas exchange hole in the extension portion, the work of exchanging the atmospheric gas in the light source chamber becomes easy.

A fourth aspect of the present invention is the optical semiconductor device according to the third aspect, wherein the main body portion includes a heat dissipation mechanism for cooling the optical semiconductor element. According to the fourth aspect, the cooling performance of the optical semiconductor element can be improved by providing the heat dissipation mechanism in the main body portion.

A fifth aspect of the present invention is the optical semiconductor device according to any one of the first to fourth aspects, wherein the oxygen concentration of the atmospheric gas in the light source chamber is 30% by volume or more. According to the fifth aspect, by setting the oxygen concentration of the atmospheric gas to 30% by volume or more, deterioration of the performance of the optical semiconductor device can be suppressed and the life of the optical semiconductor device can be extended.

A sixth aspect of the present invention is the optical semiconductor device according to any one of the first to fifth aspects, wherein the water concentration of the atmospheric gas in the light source chamber is 0.1% by volume or less. According to the sixth aspect, by setting the water concentration of the atmospheric gas to 0.1% by volume or less, dew condensation on the window member can be prevented and deterioration of the performance of the optical semiconductor element can be suppressed.

A seventh aspect of the present invention is the optical semiconductor device according to any one of the first to sixth aspects, further comprising a sealing member for sealing between the window member and the window fixing member. According to the seventh aspect, by further providing a sealing member between the window member and the window fixing member, the airtightness can be further improved.

Eighth aspect of the present invention includes a step of accommodating the optical semiconductor element in the light source chamber so that the opening provided in the housing for partitioning the light source chamber is located in front of the optical semiconductor element, and a window closing the opening. A member, a window fixing member that sandwiches and fixes the window member between the housing, a first seal member that seals between the housing and the window member, and the window member and the window fixing member. A step of sealing the opening by using a second sealing member that seals between the spaces, a step of exchanging the atmospheric gas in the light source chamber through the gas exchange hole provided in the housing, and the gas exchange hole. A method of manufacturing an optical semiconductor device comprising a sealing step. According to the eighth aspect, by exchanging the atmospheric gas through the gas exchange hole after assembling the optical semiconductor device, it is possible to facilitate the work of enclosing the desired atmospheric gas in the light source chamber.

A ninth aspect of the present invention is the optical semiconductor device according to the eighth aspect, further comprising a step of introducing a high-pressure atmospheric gas into the light source chamber from the gas exchange hole to confirm the airtightness of the light source chamber. It is a manufacturing method of. By confirming the airtightness through the gas exchange hole, the reliability of the optical semiconductor device can be improved.

10 ... Optical semiconductor device, 12 ... Optical semiconductor element, 14 ... Housing, 14a ... Main body, 14b ... Extension, 16 ... Window member, 18 ... Window fixing member, 20 ... First seal member, 22 ... Second seal Member, 24 ... light source chamber, 26 ... first opening, 28 ... second opening, 36 ... heat dissipation mechanism, 40 ... gas exchange hole, 46 ... external connector.

Claims (9)

Optical semiconductor devices and
A housing in which a light source chamber in which the optical semiconductor element is housed is partitioned and an opening is provided in front of the optical semiconductor element, and a housing.
A window member provided so as to close the opening, and
A window fixing member attached to the housing and sandwiching and fixing the window member between the housing and the housing.
A seal member that seals between the housing and the window member is provided.
The light source chamber is an optical semiconductor device that can be sealed. The optical semiconductor device according to claim 1, wherein the housing has a gas exchange hole for exchanging atmospheric gas in the light source chamber, and the gas exchange hole can be sealed. The housing includes a main body portion that overlaps the window fixing member in the thickness direction of the window member, and an extension portion that extends from the main body portion in a direction orthogonal to the thickness direction.
The optical semiconductor device according to claim 2, wherein the gas exchange hole is provided in the extension portion. The optical semiconductor device according to claim 3, wherein the main body includes a heat dissipation mechanism for cooling the optical semiconductor element. The optical semiconductor device according to any one of claims 1 to 4, wherein the oxygen concentration of the atmospheric gas in the light source chamber is 30% by volume or more. The optical semiconductor device according to any one of claims 1 to 5, wherein the water concentration of the atmospheric gas in the light source chamber is 0.1% by volume or less. The optical semiconductor device according to any one of claims 1 to 6, further comprising a sealing member for sealing between the window member and the window fixing member. A step of accommodating the optical semiconductor element in the light source chamber so that an opening provided in the housing for partitioning the light source chamber is located in front of the optical semiconductor element.
The opening is provided by using a window member that closes the opening, a window fixing member that sandwiches and fixes the window member between the housing, and a seal member that seals between the housing and the window member. The steps to seal and
A step of exchanging atmospheric gas in the light source chamber through a gas exchange hole provided in the housing,
A method for manufacturing an optical semiconductor device comprising the step of sealing the gas exchange hole. The method for manufacturing an optical semiconductor device according to claim 8, further comprising a step of introducing a high-pressure atmospheric gas into the light source chamber from the gas exchange hole to confirm the airtightness of the light source chamber.

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