TW202304013A - Optical semiconductor device and manufacturing method therefor - Google Patents
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Description
本發明係關於一種光半導體裝置及光半導體裝置的製造方法。The present invention relates to an optical semiconductor device and a method for manufacturing the optical semiconductor device.
光半導體元件係容置於用來保護元件以免受外部環境影響之封裝中。在氮化物半導體的情況下,已知藉由密封於含氧氣的氛圍氣體(atmosphere gas)中係能抑制半導體層的劣化。已提出一種方法,係將氧氣封入封裝內,並於接合時抑制將封裝與窗構件之間接合之金屬材料氧化的影響(例如參照專利文獻1)。 [先前技術文獻] [專利文獻] The optical semiconductor element is housed in a package that protects the element from the external environment. In the case of a nitride semiconductor, it is known that deterioration of the semiconductor layer can be suppressed by sealing in an atmosphere gas containing oxygen. There has been proposed a method of enclosing oxygen into the package and suppressing the effect of oxidation of the metal material bonded between the package and the window member during bonding (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Document]
[專利文獻1]日本特開2018-093137號公報。[Patent Document 1] Japanese Patent Laid-Open No. 2018-093137.
[發明所欲解決之課題][Problem to be Solved by the Invention]
為了延長光半導體元件的壽命,較佳為將高濃度(例如20%以上)的氧氣封入封裝內。然而,當試圖將高濃度的氧氣封入封裝內時,難以防止將封裝與窗構件之間接合之金屬材料的氧化。In order to prolong the lifetime of the optical semiconductor device, it is preferable to seal high concentration (for example, 20% or more) of oxygen into the package. However, when trying to seal a high concentration of oxygen into the package, it is difficult to prevent oxidation of the metal material joining between the package and the window member.
本發明係有鑑於如此課題而完成,目的在於提供一種用來實現延長光半導體元件的壽命之技術。 [用於解決課題之手段] This invention is made|formed in view of such a subject, and it aims at providing the technique for realizing the extension of the lifetime of an optical-semiconductor element. [Means used to solve problems]
本發明之光半導體裝置係具備:光半導體元件;殼體,係隔出有容置光半導體元件之光源室,於光半導體元件的前表面設置開口;窗構件,係設置為封閉開口;窗固定構件,係安裝於殼體,將窗構件夾在殼體與窗固定構件之間而固定;及第一密封構件,係將殼體與窗構件之間密封。光源室係可密閉。The optical semiconductor device of the present invention is equipped with: an optical semiconductor element; a housing that separates a light source room for accommodating the optical semiconductor element, and an opening is arranged on the front surface of the optical semiconductor element; a window member is arranged to close the opening; the window is fixed A member is installed in the housing, and the window member is fixed between the housing and the window fixing member; and a first sealing member is used to seal the housing and the window member. The light source chamber can be sealed.
本發明的另一態樣為一種光半導體裝置的製造方法。此光半導體裝置的製造方法係具備:將光半導體元件容置於光源室內,使得設置於隔出有光源室之殼體之開口位於光半導體元件的前表面之步驟;使用窗構件、窗固定構件及第一密封構件將開口密閉之步驟,窗構件係封閉開口,窗固定構件係將窗構件夾在殼體與窗固定構件之間而固定,第一密封構件係將殼體與窗構件之間密封;透過設置於殼體之氣體交換孔交換光源室內的氛圍氣體之步驟;及密閉氣體交換孔之步驟。Another aspect of the present invention is a method of manufacturing an optical semiconductor device. The manufacturing method of this optical semiconductor device comprises: the steps of accommodating the optical semiconductor element in the light source chamber so that the opening provided in the casing separating the light source chamber is located on the front surface of the optical semiconductor element; using a window member and a window fixing member And the step of sealing the opening with the first sealing member, the window member is to close the opening, the window fixing member is to clamp the window member between the housing and the window fixing member to fix, the first sealing member is to seal the window between the housing and the window member sealing; the step of exchanging the ambient gas in the light source chamber through the gas exchange hole provided in the casing; and the step of sealing the gas exchange hole.
根據本發明的一態樣,能延長光半導體裝置的壽命。According to one aspect of the present invention, the lifetime of the optical semiconductor device can be extended.
於下文中將參照圖式詳細說明用於實施本發明之形態。另外,於說明中對於相同的元件係標示相同的元件符號,並適當省略重複的說明。此外,為了幫助理解說明,於各個圖式中各個構成元件的尺寸比例不一定與實際的尺寸比例一致。Hereinafter, modes for implementing the present invention will be described in detail with reference to the drawings. In addition, in the description, the same reference numerals are assigned to the same components, and overlapping descriptions are appropriately omitted. In addition, in order to facilitate understanding of the description, the dimensional ratios of the respective constituent elements in the respective drawings do not necessarily match the actual dimensional ratios.
圖1係示意性顯示實施形態之光半導體裝置10的構成之圖。光半導體裝置10具備光半導體元件12、殼體14、窗構件16、窗固定構件18及第一密封構件20。FIG. 1 is a diagram schematically showing the configuration of an
容置光半導體元件12的光源室24係由殼體14、窗構件16、窗固定構件18、第一密封構件20密封。於本實施形態中,用O形環等密封構件來密閉光源室24,藉此使得易於將高濃度(例如20%以上)的氧氣封入以作為光源室24內的氛圍氣體。藉由將高濃度的氧氣封入至光源室24內,能抑制伴隨使用光半導體元件12而導致的性能劣化,並能實現延長光半導體元件12的壽命。The
圖中以窗構件16的厚度方向為z方向,以正交於z方向之方向為x方向及y方向。關於z方向的朝向,有時將從光半導體元件12朝向窗構件16之+z方向稱為前表面側,有時將位於前表面側的反側之-z方向稱為背面側。此外,以殼體14中的本體部14a與延伸部14b相鄰之方向為x方向。本體部14a係安裝窗固定構件18之部分,且為殼體14與窗固定構件18於z方向重疊之部分。延伸部14b係殼體14與窗固定構件18於z方向不重疊之部分。In the figure, the thickness direction of the
光半導體元件12係包含氮化物半導體材料,包含以In
1-x-YAl
xGa
yN(0≦x≦1,0≦y≦1,0≦x+y≦1)之組成表示之GaN系半導體材料。光半導體元件12例如為構成為用於輸出波長360nm以下的深紫外光之LED(Light Emitting Diode;發光二極體)晶片。光半導體元件12係包含由帶隙為約3.4eV以上之氮化鋁鎵(AlGaN)所構成之活性層。
The
光半導體元件12係容置於由殼體14所隔出的光源室24。光半導體元件12係配置為使得窗構件16位於光半導體元件12的前表面。光半導體元件12的輸出光係透過設置於殼體14之第一開口26、窗構件16、設置於窗固定構件18之第二開口28而取出至光源室24的外部。光半導體元件12係設置於基板30上。圖所示的例子中,複數個光半導體元件12係設置於基板30上。複數個光半導體元件12例如以二維陣列狀配置於基板30上。光半導體元件12亦可僅設置一個於基板30上。The
殼體14係包含第一構件32及第二構件34。光源室24係被隔出於第一構件32與第二構件34之間。第一構件32及第二構件34係由不鏽鋼及鋁等金屬材料所構成。第一構件32及第二構件34中的至少其中之一亦可由樹脂材料所構成。The
第一構件32係配置於光半導體元件12的前表面側,具有第一開口26。第一開口26為圓形開口。第二構件34係配置於光半導體元件12的背面側。第二構件34具有用於冷卻光半導體元件12之散熱機構36。散熱機構36例如具有散熱器。散熱機構36係於光源室24的外部受到空冷或水冷。基板30係安裝至散熱機構36的上表面38,熱連接至散熱機構36。散熱機構36的上表面38係露出於光源室24內。The
窗構件16係設置為封閉殼體14的第一開口26。窗構件16係夾在殼體14與窗固定構件18之間而固定。窗構件16為圓板狀的構件。窗構件16係由供從光半導體元件12所輸出之深紫外光透射之材料所構成,例如由石英玻璃(SiO
2)或藍寶石(Al
2O
3)所構成。
The
窗固定構件18係安裝至殼體14,將窗構件16夾在殼體14與窗固定構件18之間而固定。窗固定構件18具有第二開口28,第二開口28係供從光半導體元件12所輸出之深紫外光穿過。第二開口28為圓形開口,例如具有與第一開口26相同大小。窗固定構件18係由如聚四氟乙烯(PTFE;polytetrafluoroethylene)或聚偏二氟乙烯(PVDF;polyvinylidene fluoride)等之氟樹脂材料所構成。窗固定構件18亦可由不鏽鋼或鋁等金屬材料所構成。The
第一密封構件20係設置於殼體14與窗構件16之間,並將殼體14與窗構件16之間密封。第一密封構件20例如為O形環,由偏二氟乙烯(vinylidene fluoride)系橡膠(FKM(fluororubber;氟橡膠))、四氟乙烯-丙烯(tetrafluoroethylene-propylene)系橡膠(FEPM(tetrafluoroethylene-propylene rubber;四丙氟橡膠))、四氟乙烯-全氟乙烯醚(tetrafluoroethylene-perfluorovinyl ether)系橡膠(FFKM(perfluorocarbon rubber;全氟橡膠))等氟橡膠所構成。第一密封構件20亦可為由橡膠或金屬材料所構成之墊圈。The
光半導體裝置10可進一步具備第二密封構件22。第二密封構件22係設置於窗構件16與窗固定構件18之間,將窗構件16與窗固定構件18之間密封。第二密封構件22可與第一密封構件20同樣地由氟橡膠所構成之O形環,亦可為由橡膠或金屬材料所構成之墊圈。光半導體裝置10亦可不具備第二密封構件22。The
殼體14具有本體部14a及延伸部14b。本體部14a係安裝窗固定構件18之部分,且為與窗固定構件18於z方向重疊之部分。本體部14a係設置有第一開口26及散熱機構36。延伸部14b係於z方向未與窗固定構件18重疊之部分,且為從本體部14a往x方向延伸之部分。延伸部14b係設置有氣體交換孔40及外部連接器46。The
氣體交換孔40係設置於延伸部14b,配置於殼體14的前表面側。氣體交換孔40係貫穿第一構件32而與光源室24的內部及外部連通。氣體交換孔40係沿z方向延伸。氣體交換孔40係為了在窗構件16及窗固定構件18安裝於殼體14之狀態下交換光源室24內的氛圍氣體而設置。密閉栓42係可拆卸地安裝於氣體交換孔40的入口。藉由將密閉栓42安裝於氣體交換孔40的入口,使得氣體交換孔40封閉且光源室24密閉。密閉栓42例如由外螺紋所構成,並與形成於氣體交換孔40的內表面之螺紋切削結構接合。如O形環等密封構件44係設置於殼體14與密閉栓42之間。The
為了抑制光半導體元件12的劣化,光源室24內的氛圍氣體係含有20體積%以上的氧氣,較佳為包含30體積%以上的氧氣。光源室24內的氛圍氣體的氧氣濃度亦可為40體積%至50體積%左右。光源室24內的氛圍氣體除了氧氣之外還可含有氮氣或稀有氣體。光源室24內的氛圍氣體係由乾燥氣體所構成,以防止光源室24中的結露。光源室24內的氛圍氣體的水分濃度為0.1體積%以下,較佳為10ppm以下或是1ppm以下。光源室24中的氛圍氣體亦可實質上僅含氧氣及氮氣。光源室24中亦可設置用於吸附氛圍氣體中的水分之如沸石等未圖示的乾燥劑。In order to suppress deterioration of the
外部連接器46係設置於延伸部14b,並配置於殼體14的背面側。外部連接器46係插入至供第二構件34貫穿之安裝孔48。外部連接器46係用於將控制訊號及驅動電流供給至光半導體元件12之電連接器。外部連接器46具有露出至光源室24的外部之外部端子。外部連接器46係經由連接電纜52、內部連接器54及基板30而與光半導體元件12電連接。內部連接器54例如設置於基板30上。連接電纜52係設置於光源室24內,將外部連接器46與內部連接器54之間電連接。The
窗固定構件18係藉由第一緊固構件56而固定至殼體14。第一構件32及第二構件34係藉由第一緊固構件56及第二緊固構件58而固定。第一緊固構件56及第二緊固構件58為螺釘、螺栓等。第一緊固構件56係設置於本體部14a,並固定第一構件32、第二構件34及窗固定構件18。第二緊固構件58係設置於延伸部14b,並固定第一構件32及第二構件34。The
圖2係示意性顯示圖1的光半導體裝置10的構成之俯視圖,且顯示光半導體裝置10的前表面側的構成。圖1係顯示圖2的A-A線剖面。窗固定構件18在圖2的俯視圖中具有四個角經形成切角或倒角之矩形外形。第二開口28係圓形開口,設置於窗固定構件18的中央。複數個光半導體元件12係二維矩陣狀配置於與第二開口28重疊之區域內。於圖2的例子中,複數個光半導體元件12係配置為三角格子狀。FIG. 2 is a plan view schematically showing the configuration of the
本體部14a係與窗固定構件18同樣地具有四個角經形成切角或倒角之矩形外形。延伸部14b係從本體部14a及窗固定構件18往x方向突出。延伸部14b於圖2的俯視圖中,具有角部經形成倒角之矩形外形。密閉栓42係安裝於延伸部14b。The
圖3係示意性顯示圖1之光半導體裝置10的構成之仰視圖,顯示光半導體裝置10的背面側的構成。第一緊固構件56係安裝於本體部14a的四個角部等。第二緊固構件58係安裝於延伸部14b。散熱機構36係設置於本體部14a的中央。外部連接器46係設置於延伸部14b的中央。FIG. 3 is a bottom view schematically showing the configuration of the
圖4係顯示包含於氛圍氣體的氧氣濃度與光半導體元件12的光輸出變化的關係性之圖表。圖表的縱軸係表示半導體元件12的光輸出的變化比例,以開始點亮時的光輸出為基準。圖表的橫軸係光半導體元件12的點亮時間。圖表的各個曲線B至G係使光半導體元件12的氛圍氣體所含氧氣濃度的體積比例在0%至50%範圍內差異化。氛圍氣體中除了氧氣之外實質上僅含氮氣。FIG. 4 is a graph showing the relationship between the oxygen concentration contained in the atmosphere gas and the light output change of the
如圖4的圖表所示,可知氛圍氣體所含的氧氣濃度越高,光半導體元件12的光輸出的下降速度就越慢。於氧氣濃度0%的曲線B中,當經時至圖表的右端時,光輸出係減少了約24%。當以相同經過時間為基準時,於氧氣濃度10%的曲線C中光輸出係降低約19%,於氧氣濃度20%的曲線D中光輸出係降低約13%。另一方面,於氧氣濃度30%的曲線E中光輸出的降低為約10%,氧氣濃度40%的曲線F及氧氣濃度50%的曲線G中,光輸出的降低為約8%。因此,藉由使氛圍氣體中含有比標準大氣所含氧氣濃度(約21%)還要高濃度之30%以上的氧氣,能顯著地延緩光半導體元件12的光輸出降低的速度。結果為能延長光半導體元件12的壽命。As shown in the graph of FIG. 4 , it can be seen that the lower the optical output of the
接著,說明光半導體裝置10的製造方法。圖5係顯示實施形態之光半導體裝置10的製造方法之流程圖。事先準備光半導體元件12、殼體14、窗構件16、窗固定構件18及第一密封構件20。接著,將光半導體元件12容置於殼體14的光源室24內(S10)。光半導體元件12係配置為使得第一開口26位於光半導體元件12的前表面。光半導體元件12亦可在安裝於基板30上之狀態下容置於光源室24。基板30例如安裝於散熱機構36的上表面38。當將基板30容置於光源室24時,亦可用連接電纜52來將外部連接器46與內部連接器54之間連接。Next, a method of manufacturing the
接著,使用窗構件16、窗固定構件18及第一密封構件20來密閉殼體14的第一開口26(S12)。例如,在將第一密封構件20、窗構件16及窗固定構件18依序重疊配置於殼體14上之後,使用第一緊固構件56將殼體14與窗固定構件18彼此固定,藉此使第一開口26密閉。另外,亦可將第二密封構件22配置於窗構件16與窗固定構件18之間,將窗構件16與窗固定構件18之間密閉。Next, the
接著,透過氣體交換孔40交換光源室24內的氛圍氣體(S14)。例如,從氣體交換孔40卸除密閉栓42,並將噴嘴插入至氣體交換孔40,藉此從噴嘴供給氛圍氣體。供給至光源室24內的氛圍氣體較佳為氧氣濃度為30體積%以上,水分濃度為0.1體積%以下。Next, the atmosphere gas in the
接著,透過氣體交換孔40確認光源室24的密閉性(S14)。例如,從氣體交換孔40將高壓的氛圍氣體導入至光源室24,並於氣體交換孔40的入口測量氛圍氣體的壓力,藉此能檢測是否有氣體洩漏。當有檢測到氣體洩漏時,也就是密閉性為NG(不良)時(S18中的否),重新S12至S16之步驟。亦可於S12中確認於殼體14、窗構件16、窗固定構件18及第一密封構件20是否有異常,也可更換有異常的構件。當在S18中未檢測到氣體洩漏時,也就是密閉性為OK(良好)時(S18中的是),將密閉栓42安裝至氣體交換孔40並將氣體交換孔40密閉(S20)。Next, the airtightness of the
根據本實施形態,由於光源室24係被密封構件密閉,因此不需要使用為了要密閉光源室24而將金屬材料加熱而接合之加熱處理。當封入至光源室24之氛圍氣體包含高濃度的氧氣時,若加熱金屬材料而試圖進行接合,則金屬材料氧化。若金屬接合部氧化,則基於金屬接合部的密封性降低,使得無法長時間封入氛圍氣體。另一方面,於本實施形態中,由於能不使用金屬接合部而將殼體14與窗構件16之間密封,因此能容易地將高濃度的氧氣封入至光源室24。According to this embodiment, since the
根據本實施形態,由於在殼體14係設置有氣體交換孔40,因此於組裝光半導體裝置10之後,能容易地交換光源室24的氛圍氣體。當於殼體14並未設置氣體交換孔40時,必須於含有高濃度氧氣之氛圍氣體中執行組裝光半導體裝置10之S12的步驟。於包含高濃度氧氣之環境下,相較於標準大氣更容易發生火災,因此為了確保作業的安全性,必須有特別的考慮。另一方面,根據本實施形態,由於在組裝光半導體裝置10之後,事後地封入含有高濃度氧氣之氛圍氣體,因此能在標準大氣中執行組裝光半導體裝置10之S12步驟本身。結果能提升製造光半導體裝置10時的安全性。According to this embodiment, since the
根據本實施形態,藉由於本體部14a的側面設置延伸部14b,於延伸部14b設置氣體交換孔40,使得在組裝光半導體裝置10之後交換氛圍氣體之作業變得容易。此外,藉由將外部連接器46設置於延伸部14b,能將大型的散熱機構36設置於本體部14a,並能提升光半導體元件12的冷卻性能。According to this embodiment, by providing the
以上根據實施例說明了本發明。本發明並不限於上述實施形態,能夠進行各種設計變更,並能夠作各種變形例,且如此的變形例亦為本發明範圍內,皆屬本發明所屬技術領域中具通常知識者所可理解。The present invention has been described above based on the embodiments. The present invention is not limited to the above-mentioned embodiments, and various design changes can be made, and various modification examples can be made, and such modification examples are also within the scope of the present invention, and all belong to those with ordinary knowledge in the technical field of the present invention.
於上述實施形態中,顯示出了氣體交換孔40係配置於殼體14的前表面側,外部連接器46係配置於殼體14的背面側之情況。於另一實施形態中,亦可為氣體交換孔40係配置於殼體14的背面側,外部連接器46係配置於殼體14的前表面側。另外,亦可將氣體交換孔40及外部連接器46兩者皆配置於殼體14的前表面側,亦可將氣體交換孔40及外部連接器46兩者皆配置於殼體14的背面側。In the above embodiment, the
於上述實施形態中,顯示了殼體14係由第一構件32及第二構件34所構成之情況。於另一實施形態中,殼體14亦可藉由第一構件32及第二構件34一體化之構件所構成。此外,於第一構件32與第二構件34之間,亦可不藉由第一緊固構件56及第二緊固構件58來固定,而以黏合劑等來固定。於另一實施形態中,第一構件32及第二構件34中的至少其中之一亦可由兩個以上之構件所構成。In the above-mentioned embodiment, the case where the
於上述實施形態中,顯示了用第一緊固構件56來將殼體14與窗固定構件18之間固定之情況。於另一實施形態中,亦可用黏合劑來將殼體14與窗固定構件18之間固定。In the above embodiment, the case where the
於上述實施形態中,顯示了將密閉栓42安裝至氣體交換孔40而密閉的情況。於另一實施形態中,亦可在氣體交換孔40的入口設置可將氣體交換孔40設為可開關之密封閥。In the said embodiment, the case where the sealing
於上述實施形態中,顯示了光半導體元件12為發光元件之情況。於另一實施形態中,光半導體元件12亦可為光接收元件。光半導體元件12例如可為接收深紫外光之光電二極體(photodiode)。In the above-mentioned embodiment, the case where the
於下文中,針對本發明的幾個態樣進行說明。Hereinafter, several aspects of the present invention will be described.
本發明之第一態樣係一種光半導體裝置,係具備:光半導體元件;殼體,係隔出有容置前述光半導體元件之光源室,於前述光半導體元件的前表面設置開口;窗構件,係設置為封閉前述開口;窗固定構件,係安裝於前述殼體,將前述窗構件夾在前述殼體與前述窗固定構件之間而固定;及第一密封構件,係將前述殼體與前述窗構件之間密封;前述光源室係可密閉。根據第一態樣,由於光源室係被第一密封構件所密閉,因此進行密閉時不需要使用將金屬材料加熱而進行接合之加熱處理。結果為使光源室的氛圍氣體含有可能使金屬接合材料氧化而降低密封性之氧氣變得容易。The first aspect of the present invention is an optical semiconductor device, comprising: an optical semiconductor element; a housing that separates a light source chamber for accommodating the aforementioned optical semiconductor element, and an opening is provided on the front surface of the aforementioned optical semiconductor element; a window member , is arranged to close the aforementioned opening; the window fixing member is installed on the aforementioned housing, and the aforementioned window member is clamped between the aforementioned housing and the aforementioned window fixing member to fix; and the first sealing member is configured to connect the aforementioned housing to the aforementioned window fixing member. The aforementioned window components are sealed; the aforementioned light source chamber can be airtight. According to the first aspect, since the light source chamber is sealed by the first sealing member, it is not necessary to use heat treatment for heating and joining metal materials when sealing. As a result, it becomes easy to make the atmosphere of the light source chamber contain oxygen which may oxidize the metal bonding material and lower the sealing performance.
本發明之第二態樣係如第一態樣所記載之光半導體裝置,其中前述殼體具有用於交換前述光源室內的氛圍氣體之氣體交換孔,前述氣體交換孔係可密閉。根據第二態樣,藉由設置氣體交換孔,能在將窗構件安裝至殼體之狀態下交換光源室的氛圍氣體,因此能容易地進行將氛圍氣體封入至光源室之作業。A second aspect of the present invention is the optical semiconductor device described in the first aspect, wherein the casing has a gas exchange hole for exchanging the ambient gas in the light source chamber, and the gas exchange hole is sealable. According to the second aspect, by providing the gas exchange hole, the atmosphere in the light source chamber can be exchanged while the window member is attached to the housing, so that the work of sealing the atmosphere into the light source chamber can be easily performed.
本發明之第三態樣係如第二態樣所記載之光半導體裝置,其中前述殼體包括:本體部,係於前述窗構件的厚度方向與前述窗固定構件重疊;及延伸部,係從前述本體部往與前述厚度方向正交之方向延伸;前述氣體交換孔係設置於前述延伸部。根據第三態樣,藉由將延伸部設置於本體部的側面,將氣體交換孔設置於延伸部,藉此使得交換光源室的氛圍氣體之作業變得容易。A third aspect of the present invention is the optical semiconductor device as described in the second aspect, wherein the housing includes: a body portion overlapping the window fixing member in the thickness direction of the window member; and an extension portion extending from The aforementioned main body portion extends in a direction perpendicular to the aforementioned thickness direction; the aforementioned gas exchange holes are arranged in the aforementioned extending portion. According to the third aspect, by providing the extension part on the side surface of the main body part, the gas exchange hole is provided on the extension part, thereby facilitating the operation of exchanging the ambient gas of the light source chamber.
本發明之第四態樣係如第三態樣所記載之光半導體裝置,其中前述本體部包含用於冷卻前述光半導體元件之散熱機構。根據第四態樣,藉由於本體部設置散熱機構,能提升光半導體元件的冷卻性能。A fourth aspect of the present invention is the optical semiconductor device described in the third aspect, wherein the main body portion includes a heat dissipation mechanism for cooling the optical semiconductor element. According to the fourth aspect, the cooling performance of the optical semiconductor element can be improved by providing the heat dissipation mechanism in the main body.
本發明的第五態樣係如第一態樣至第四態樣中任一項所記載之光半導體裝置,其中前述光源室內的氛圍氣體的氧氣濃度為30體積%以上。根據第五態樣,藉由氛圍氣體的氧氣濃度為30體積%以上,能夠抑制光半導體元件的性能劣化,並能延長光半導體元件的壽命。A fifth aspect of the present invention is the optical semiconductor device according to any one of the first aspect to the fourth aspect, wherein the oxygen concentration of the atmospheric gas in the light source chamber is 30% by volume or more. According to the fifth aspect, when the oxygen concentration of the atmospheric gas is 30% by volume or more, performance degradation of the optical semiconductor element can be suppressed, and the lifetime of the optical semiconductor element can be extended.
本發明之第六態樣係如第一態樣至第五態樣中任一項所記載之光半導體裝置,其中前述光源室內的氛圍氣體的水分濃度為0.1體積%以下。根據第六態樣,藉由氛圍氣體的水分濃度為0.1體積%以下,能防止窗構件的結露,能抑制光半導體元件的性能劣化。A sixth aspect of the present invention is the optical semiconductor device according to any one of the first aspect to the fifth aspect, wherein the moisture concentration of the atmospheric gas in the light source chamber is 0.1% by volume or less. According to the sixth aspect, when the moisture concentration of the atmospheric gas is 0.1% by volume or less, dew condensation on the window member can be prevented, and performance degradation of the optical semiconductor element can be suppressed.
本發明之第七態樣係如第一態樣至第六態樣中任一項所記載之光半導體裝置,其中進一步具備第二密封構件,前述第二密封構件係將前述窗構件與前述窗固定構件之間密封。根據第七態樣,藉由於窗構件與窗固定構件之間進一步設置第二密封構件,能進一步提高密閉性。A seventh aspect of the present invention is the optical semiconductor device according to any one of the first aspect to the sixth aspect, further comprising a second sealing member, the second sealing member combining the window member and the window Sealing between fixed components. According to the seventh aspect, the airtightness can be further improved by further providing the second sealing member between the window member and the window fixing member.
本發明之第八態樣係一種光半導體裝置的製造方法,係具備:將光半導體元件容置於光源室內,使得設置於隔出有前述光源室之殼體之開口係位於前述光半導體元件的前表面之步驟;使用窗構件、窗固定構件、第一密封構件及第二密封構件將前述開口密閉之步驟,前述窗構件係封閉前述開口,前述窗固定構件係將前述窗構件夾在前述殼體與前述窗固定構件之間而固定,前述第一密封構件係將前述殼體與前述窗構件之間密封;前述第二密封構件係將前述窗構件與前述窗固定構件之間密封;透過設置於前述殼體之氣體交換孔交換前述光源室內的氛圍氣體之步驟;及密閉前述氣體交換孔之步驟。根據第八態樣,藉由組裝光半導體裝置之後透過氣體交換孔來交換氛圍氣體,能使將所需的氛圍氣體封入至光源室內之作業變得容易。The eighth aspect of the present invention is a method of manufacturing an optical semiconductor device, which includes: accommodating an optical semiconductor element in a light source chamber, so that the opening provided in the housing separating the aforementioned light source chamber is located in the aforementioned optical semiconductor element. The step of the front surface; the step of sealing the aforementioned opening by using a window member, a window fixing member, a first sealing member and a second sealing member, the aforementioned window member is used to close the aforementioned opening, and the aforementioned window fixing member is used to sandwich the aforementioned window member in the aforementioned case body and the window fixing member, the first sealing member seals between the housing and the window member; the second sealing member seals the window member and the window fixing member; a step of exchanging the ambient gas in the light source chamber through the gas exchange hole of the housing; and a step of sealing the gas exchange hole. According to the eighth aspect, by exchanging the atmosphere gas through the gas exchange hole after assembling the optical semiconductor device, it is possible to facilitate the work of sealing the required atmosphere gas into the light source chamber.
本發明之第九態樣係如第八態樣所記載之光半導體裝置的製造方法,其中進一步具備:從前述氣體交換孔將高壓的氛圍氣體導入至前述光源室內並確認前述光源室的密閉性之步驟。藉由透過氣體交換孔來確認密閉性,能提高光半導體裝置的可信賴性。A ninth aspect of the present invention is the method for manufacturing an optical semiconductor device according to the eighth aspect, further comprising: introducing high-pressure atmospheric gas into the light source chamber through the gas exchange hole and confirming the airtightness of the light source chamber the steps. The reliability of the optical semiconductor device can be improved by confirming the airtightness through the gas exchange hole.
10:光半導體裝置
12:光半導體元件
14:殼體
14a:本體部
14b:延伸部
16:窗構件
18:窗固定構件
20:第一密封構件
22:第二密封構件
24:光源室
26:第一開口(開口)
28:第二開口
30:基板
32:第一構件
34:第二構件
36:散熱機構
38:上表面
40:氣體交換孔
42:密閉栓
44:密封構件
46:外部連接器
48:安裝孔
52:連接電纜
54:內部連接器
56:第一緊固構件
58:第二緊固構件
10: Optical semiconductor device
12: Optical semiconductor components
14:
[圖1]係示意性顯示實施形態之光半導體裝置的構成之剖視圖。 [圖2]係示意性顯示圖1的光半導體裝置的構成之俯視圖。 [圖3]係示意性顯示圖1的光半導體裝置的構成之仰視圖。 [圖4]係顯示包含於氛圍氣體的氧氣濃度與光半導體元件的光輸出變化的關係性之圖表。 [圖5]係顯示實施形態之光半導體裝置的製造方法之流程圖。 [ Fig. 1 ] is a cross-sectional view schematically showing the configuration of an optical semiconductor device according to an embodiment. [ Fig. 2] Fig. 2 is a plan view schematically showing the configuration of the optical semiconductor device of Fig. 1 . [ Fig. 3 ] is a bottom view schematically showing the configuration of the optical semiconductor device of Fig. 1 . [ Fig. 4 ] is a graph showing the relationship between the oxygen concentration contained in the atmospheric gas and the light output change of the optical semiconductor element. [ Fig. 5 ] is a flow chart showing a method of manufacturing an optical semiconductor device according to the embodiment.
10:光半導體裝置 10: Optical semiconductor device
12:光半導體元件 12: Optical semiconductor components
14:殼體 14: Housing
14a:本體部 14a: Body part
14b:延伸部 14b: Extension
16:窗構件 16: window components
18:窗固定構件 18: Window fixing member
20:第一密封構件 20: the first sealing member
22:第二密封構件 22: Second sealing member
24:光源室 24: Light source room
26:第一開口(開口) 26: First opening (opening)
28:第二開口 28: Second opening
30:基板 30: Substrate
32:第一構件 32: first component
34:第二構件 34: Second component
36:散熱機構 36: cooling mechanism
38:上表面 38: upper surface
40:氣體交換孔 40: gas exchange hole
42:密閉栓 42: Airtight bolt
44:密封構件 44: sealing member
46:外部連接器 46: External connector
48:安裝孔 48: Mounting hole
52:連接電纜 52: Connecting cables
54:內部連接器 54: Internal connector
56:第一緊固構件 56: first fastening member
58:第二緊固構件 58: second fastening member
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JP4198102B2 (en) * | 2004-09-17 | 2008-12-17 | 株式会社リコー | Semiconductor device, image reading unit, and image forming apparatus |
JP4964512B2 (en) * | 2005-08-02 | 2012-07-04 | シャープ株式会社 | Nitride semiconductor light emitting device |
WO2010010721A1 (en) * | 2008-07-25 | 2010-01-28 | 日本電気株式会社 | Encapsulating package, printed circuit board, electronic device and method for manufacturing encapsulating package |
CN101764190A (en) * | 2010-01-01 | 2010-06-30 | 中山伟强科技有限公司 | Packaging structure of light emitting diode |
JP2012094922A (en) * | 2012-02-15 | 2012-05-17 | Sharp Corp | Assembly apparatus |
JP6296024B2 (en) * | 2015-08-28 | 2018-03-20 | 日亜化学工業株式会社 | Semiconductor laser device |
JP6687008B2 (en) * | 2017-11-30 | 2020-04-22 | 日亜化学工業株式会社 | Light emitting device |
-
2020
- 2020-12-22 JP JP2020212290A patent/JP7008122B1/en active Active
-
2021
- 2021-12-15 TW TW110146854A patent/TW202304013A/en unknown
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JP7008122B1 (en) | 2022-01-25 |
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