CN101950921B - Light emitting element, and manufacturing method thereof - Google Patents
Light emitting element, and manufacturing method thereof Download PDFInfo
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- CN101950921B CN101950921B CN2010102943346A CN201010294334A CN101950921B CN 101950921 B CN101950921 B CN 101950921B CN 2010102943346 A CN2010102943346 A CN 2010102943346A CN 201010294334 A CN201010294334 A CN 201010294334A CN 101950921 B CN101950921 B CN 101950921B
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- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention discloses a light emitting element, and a manufacturing method thereof. The light emitting lement comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.
Description
The application be the application people for Sharp Corporation, the applying date be that June 13, application number in 2008 are dividing an application of 200810125459.9 patent application " light-emitting device and manufacture method thereof ".
Technical field
The present invention relates to light-emitting device and manufacture method thereof, more specifically, relate to take semiconductor light-emitting apparatus and the manufacture method thereof of nitride semiconductor laser device as typically having the bob optical wavelength.
Background technology
Due to band structure and the chemical stability of nitride-based semiconductor, the expectation nitride-based semiconductor (, such as comprising AlN, GaN or InN etc., comprises that perhaps their solid solution is such as AlGaN or InGaN etc.They are referred to as nitride-based semiconductor in this application) as the material of light-emitting device or power device, and the light source that these nitride-based semiconductors are applied to information-recording apparatus has also caused people's attention, and these nitride-based semiconductors are compounds of III family element al, Ga or In etc. and V group element N.
By cleavage with cut apart the wafer that forms by at substrate upper strata azide semiconductor layer and electrode, obtain to become and be used for by such nitride system semiconductor the chip of laser of laser device.And, on the end surface that obtains by the cleavage wafer, particularly on the emission side end surface, forming diaphragm (antiradar reflectivity film), this diaphragm has material (for example, the SiO for optical transparency
2Perhaps Al
2O
3Deng) individual layer, perhaps by making up the multilayer of the negligible amounts that such individual layer obtains.On the other hand, form the diaphragm (high reflection film) of large reflectivity on the end surface with respect to this emission side end surface, the diaphragm of this large reflectivity comprises Al
2O
3And Ta
2O
5Deng multilayer laminated.For the diaphragm of formation like this, it is effectively luminous that reflectivity is adjusted into permission, and prevent the change by the character of the end surface that causes such as chemical reactions such as oxidations.
Yet, there is such problem, diaphragm adheres to and assembles pollutant thereon, and it is especially remarkable to have problem such in the light-emitting device of 500nm or shorter short-wavelength light in emission.This problem causes like this; be present in the short-wavelength light polymerization that near the chip of light-emitting device the siloxanes with Si and O combination and hydrocarbon etc. are launched from chip; and adhere to and be gathered on diaphragm, this is also a problem to the light-emitting device that adopts above-mentioned nitride-based semiconductor and emission short-wavelength light.
The problem of the pollutant that chip adheres to thereon and assembles is described based on the schematic side elevation of chip of laser shown in Figure 9.Chip of laser 100 shown in Figure 9 has the above-mentioned film of the antiradar reflectivity as diaphragm 101 and highly reflecting films 102; and the light of the emission of the end surface from active layer 103 on chip of laser 100 emission side passes antiradar reflectivity film 101 and advances, and towards the direction that is substantially perpendicular to end surface by shown in dotted line.At this moment, pollutant 104 and the light reaction of launching, adhere to and be gathered on the antiradar reflectivity film to absorb the light of being launched.Therefore, must increase drive current and keep the emission measure of light.The life-span of device has been shortened in this increase of drive current, and brings the unsteadiness of light-emitting device operation.
, as so concrete example, illustrate the performance test results of the laser device with chip of laser shown in Figure 9 100 in Figure 10.Figure 10 is the chart when controlling drive current in the continuous oscillation of the laser device with 405nm oscillation wavelength and make light output remain on 15mW and temperature to be 75 ℃.As shown in figure 10, because the pollutant 104 after starting of oscillation in atmosphere adheres to and assembles very thickly gradually, so drive current increases along with the passage of driving time.Specifically, after operation started, current value was about 60mA, but was increased to approximately 150mA when the driving time of 500 hours, namely surpassed twice.In addition, drive current fluctuates up and down take tens milliamperes as unit, and drives fluctuation of service.
For fear of such problem, the pot type of using encapsulation (can package) is as example, proposed to come by the atmosphere that use is covered gas-tight seal chip and control gas-tight seal the invasion (seeing patent documentation 1) of contaminant restraining.In addition, also proposed to remove by plasma clean the method for pollutant before gas-tight seal, and the auxiliary lower adsorption fouling thing of the adsorbent that arranges removes the method (seeing patent documentation 2 and 3) of pollutant in the encapsulation of gas-tight seal.
[patent documentation 1] JP-A-2004-289010
[patent documentation 2] JP-A-2004-040051
[patent documentation 3] JP-A-2004-014820
Yet these methods not only require the atmosphere of gas-tight seal is strictly controlled, and require the strict control to airtight sealed structure, and this makes the volume of light-emitting device become large.Therefore,, because the volume of light-emitting device is large, be difficult to adopt this device at the light source that is used for information-recording apparatus, this light source typically is the optical pick-up (optical pickup) for compact disk (CD) and digital universal disc (DVD).Although do not need the light-emitting device with posture encapsulation (frame package) of gas-tight seal can be easy to be applied to optical pick-up, but as shown in Figure 9 along with operating time passage pollutant 104 adheres to and assembles, the irregular operation that this has shortened the life-span of device and has caused device.
In addition, even for the encapsulated type of gas-tight seal chip wherein, owing to needing to adopt organic bond in encapsulation, for example Ag cream, silica-based or epoxy adhesive, the component of these adhesives is also volatilized and becomes pollutant.Remove pollutant by the irradiation with plasma etc. before gas-tight seal, perhaps by carrying out gas-tight seal in the dry air with the dew point of-15 ℃ or lower temperature, can prevent to a certain extent that pollutant from adhering to and assembling, but because need plasma irradiating and for the strict control of atmosphere of sealing, the trouble so manufacturing process becomes.In addition, because volatilizing, the heat that pollutant produces due to the run duration at device enters the atmosphere of sealing, so be difficult to prevent fully adhering to and assembling of pollutant.In addition, be necessary because be used for being confirmed whether really having carried out the process of gas-tight seal, and because really do not have the light-emitting device of gas-tight seal to abandon as waste product, so reduced output.
Summary of the invention
In order to overcome above-mentioned traditional problem, one of purpose of the present invention is to provide such light-emitting device, and this light-emitting device reduces and adheres to and be gathered in pollutant on chip, and the life-span is long and stable, do not need the structure of gas-tight seal, and make gas-tight seal easily and not need strict control; The present invention also provides the method for making this device.
To achieve these goals, comprise according to the light-emitting device of one aspect of the invention:
Chip, be used for luminous; With
Light absorping film, be formed on the outmost surface of the end surface that emission is passed through from the light of this chip, the light of being launched with absorption portion.
Comprise following step according to the manufacture method of the light-emitting device of one aspect of the invention:
First step, wherein form diaphragm, to protect this end surface on the part of the end surface as from the Laser emission of chip of laser, passing through; And
Second step, wherein after first step, form light absorping film on the surface of diaphragm, with the laser of absorption portion from the chip of laser emission.
In addition, according to a further aspect of the invention light-emitting device comprises:
Chip of laser, be used for luminous;
Metal film, by the metal manufacturing and be formed on the outmost surface of end surface of this chip, from the light emission of this chip by this end surface.
According to structure of the present invention, because being formed on light, light absorping film launches the light of being launched with absorption portion on the end of passing through, so can adhere to and be gathered on light absorping film by contaminant restraining, namely contaminant restraining adheres to and is gathered in the light of selfluminous device to launch on the end of passing through.Therefore, can prevent the minimizing of adhering to and assemble the light emitted light output that causes by such pollutant.In addition, keep light output because needn't increase drive current, so can extend the life-span of light-emitting device.
Description of drawings
Fig. 1 is the schematic side elevation according to the chip of laser of the embodiment of the present invention;
Fig. 2 is the chart of showing according to the laser device the performance test results of the embodiment of the present invention;
Fig. 3 is the schematic side elevation with chip of laser of AlN film;
Fig. 4 is the chart of showing the performance test results of the laser device with chip of laser shown in Figure 3;
Fig. 5 A is the perspective schematic view according to the chip of laser of first embodiment of the invention;
Fig. 5 B is the schematic side elevation according to the chip of laser of first embodiment of the invention;
Fig. 6 is the perspective schematic view according to the laser device of first embodiment of the invention;
Fig. 7 is the perspective schematic view according to the laser device of second embodiment of the invention;
Fig. 8 is the perspective schematic view according to the laser device of third embodiment of the invention;
Fig. 9 is the schematic side elevation of conventional laser chip;
Figure 10 is the chart of showing conventional laser device performance test result;
Figure 11 is the perspective schematic view according to the chip of laser of thriteenth embodiment of the invention;
Figure 12 is the microphoto of showing according to the chip of laser cross section of thriteenth embodiment of the invention.
Embodiment
Hereinafter, will embodiments of the invention be described based on Fig. 1 to 8.At first describe basic structure of the present invention, then describe various embodiment.
Basic structure: basic structure of the present invention is described with Fig. 1.Fig. 1 is the schematic side elevation of showing according to the topology example of chip of laser of the present invention, and corresponding to the Fig. 9 that shows the conventional laser chip structure.
As shown in Figure 1, in the present invention, antiradar reflectivity film 3 is formed on the end surface of emission side of chip of laser 1, active layer 2 Emission Lasers by this chip of laser 1, and high reflection film 4 is formed on end surface with respect to the emission side end surface, especially, light absorping film 5 is formed on the surface of the antiradar reflectivity film 3 on the end surface that is formed at emission side.Traditionally,, in order not reduce luminous quantity, only there is the antiradar reflectivity film 3 by the material manufacturing for optical transparency to be formed on the end surface of emission side.Yet, in the present invention, by the light absorping film 5 of the opaque material manufacturing of the light to launching, be formed on the surface of antiradar reflectivity film 3.
For example, can be as follows as the film of light absorping film 5: the metal film that comprises gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), osmium (Os), ruthenium (Ru) or palladium (Pd) etc.; The nitride film that comprises the nitride of aluminium (Al), titanium (Ti), zirconium (Zr), yttrium (Y), silicon (Si), niobium (Nb), hafnium (Hf), tungsten (W) or tantalum (Ta) etc.; And oxygen deprivation film (oxygen depleted film), to be the oxide of aluminium (Al), titanium (Ti), zirconium (Zr), yttrium (Y), silicon (Si), niobium (Nb), hafnium (Hf), tungsten (W) or tantalum (Ta) etc. and its component depart from the direction of the component that tails off from its stoichiometric compositions to oxygen wherein this oxygen deprivation film.
Next, use Fig. 2 explanation to have the operation example of the laser device of the chip of laser that is formed with light absorping film 5.Fig. 2 is the chart of the performance test results of showing the laser device of the chip of laser 1 with structure shown in Figure 1, and corresponding to Figure 10 of the performance test results of showing the conventional laser apparatus.In addition, Fig. 2 is chart in such cases, wherein control drive current and make light output remain on 20mW and temperature is 75 ℃ in air atmosphere in the continuous oscillation of the laser device of the oscillation wavelength with 405nm, chip of laser does not have gas-tight seal here.
As shown in Figure 2,, by forming light absorping film 5 on the surface at antiradar reflectivity film 3, can suppress the increase with the drive current of driving time passage, and also can the stabilized driving electric current.In this embodiment, although thereby light output is set as than the condition of the large 15mW in Figure 10 and makes the reaction of pollutant easy, there is no much fluctuations from the starting of oscillation drive current, be namely constant and be stabilized in approximately 80mA.
This can be understood as, and the light that part is launched is by light absorping film 5 absorptions, and generation heat therefrom, and pollutant evaporation again due to heat perhaps prevents their gatherings, so has suppressed adhering to and assembling of pollutant., due to the adhering to and assemble of contaminant restraining, even laser device after long-time the driving, also can prevent the increase of the drive current that the minimizing due to light quantity causes, and extend the life-span of laser device.
In addition,, by form light absorping film 5 in chip of laser 1,, even with various encapsulation, install and there is no gas-tight seal, also can suppress the increase due to the caused drive current of passage of driving time.And, therefore also can encapsulate the laser device of emission short-wavelength light and there is no gas-tight seal, and laser device can be made compactly.In addition, even adopt the encapsulation need gas-tight seal, because for the strict control of air-proof condition such as dew point etc., be unnecessary, so can be easy to make laser device.
In the embodiment of explanation after a while, describe concrete structure and the effect of the chip of laser that is formed with light absorping film 5 in detail.In addition, the material of above-mentioned light absorping film 5 is example, and other material can be used for light absorping film 5.And light absorping film 5 can be multilayer film.
The present invention can be applied to launch the common light-emitting device of short-wavelength light, and except chip of laser 1, also can be applied to the chip of light-emitting device, for example, light-emitting diode or super-radiance light emitting diode (superluminescence diode) etc.In addition, when being applied to chip of laser, the present invention not only can be applied to as above from the luminous edge-emitting laser chip of end surface (it is perpendicular to the growing surface of every layer on substrate), and can be applied to from surface (it is parallel on substrate the growing surface of every layer) radiative surface-emitting laser chip., in the situation that edge-emitting laser chip and surface-emitting laser chip are both,, by form light absorping film 5 on the outmost surface of radiative end, can prevent that pollutant from adhering to and being gathered on outmost surface.
The present invention also can be applied to the chip with a plurality of devices and emission short-wavelength light.For example, can be applied to holographic laser apparatus (hologram laser device), this holographic laser apparatus has chip of laser and such as holographic apparatus and optical pickup apparatus etc. of Optical devices, perhaps, can be applied to such chip, this chip is used for being formed and being launched light-emitting device as the light with a plurality of wavelength of white light by the chip of emission short wavelength's light and fluorescent plate.
Except nitride-based semiconductor, the present invention can be applied to the light-emitting device of being made by the material of emission short-wavelength light.For example, the present invention can be applied to the light-emitting device of being made by ZnSe base or zno-based material.
In addition, the semiconductor film such as the hexagon system of AlN film etc. can be formed directly on end surface.About such structure, can obtain such effect, adhere to diaphragm and peel off preventing, and because end surface is protected end surface safely by the close attachment of diaphragm, so in the operation of height output timer, become stable.Adopt the chart in Fig. 4 to describe these effects.Fig. 4 has showed the performance test results of the laser device with chip of laser 30, and this chip 30 has such structure, and wherein AlN film 32 shown in Figure 3 is formed on the end surface of emission side, then by Al
2O
3The antiradar reflectivity film 33 of making is formed on film 32.Fig. 4 is chart in such cases, controls drive current light output is remained on 15mW and temperature as 75 ℃ in air atmosphere in the continuous oscillation of the laser device of the oscillation wavelength with 437nm, and there is no gas-tight seal.
As shown in Figure 4, the chip of laser 30 that is formed with the AlN film on end surface shown in Figure 3 can stable operation surpass 1000 hours, even also do not have damaged when drive current surpasses 150mA under the light output of 15mW.Because this chip of laser 30 does not provide as shown in Figure 1 light absorping film 5 to be different from effect of the present invention, so drive current increases along with the passage of driving time.Specifically, in 500 hours after starting of oscillation, drive current has increased the amount of 30mA.Yet,, if light absorping film 5 according to the present invention is formed on the surface of antiradar reflectivity film 33 in structure shown in Figure 3, can prevent that drive current from increasing along with the passage of driving time, as shown in Figure 2.
And, the reflectivity that is constructed so that high reflection film 4 as shown in Figure 1 when light-emitting device is low to allow a small amount of light by high reflection film 4 emissions, and drive current is controlled based on the control signal of this a small amount of light of launching by feedback, and light absorping film 5 can be formed on the surface of high reflection film 4.
About such structure, because prevented that pollutant from adhering to and assembling on the surface of high reflection film 4, so can accurately produce the light output of control signal.Therefore, can prevent that for the low light level by 4 emissions of the high film of high reflectance be misunderstanding due to the weak output light that carrys out selfluminous device, even this is because the adhering to and assembles of pollutant, and so prevent that excessive large electric current is provided to light-emitting device.
In the situation that metal film is used as light absorping film 5, if metal film is formed directly on end surface, electric current is shunted via metal film, and can not flow into active layer.In addition, no matter whether this film is by the metal manufacturing, from the heat that light absorping film 5 produces, all may damage end surface, and therefore the close end surface formation of light absorping film 5 is not preferred.And, because the place of contaminants is diaphragm 3,4 surface, thus light absorping film 5 be preferably formed in the near surface of diaphragm rather than end surface near, to prevent adhering to and assembling of multi-pollutant more.
Embodiment: next, the embodiments of the invention with above-mentioned basic structure are described.Each embodiment is only example, and the present invention can have any structure, as long as light absorping film is formed on the outmost surface of radiative end as mentioned above.
The first embodiment: at first, use Fig. 5 A and 5B to describe the first embodiment.Fig. 5 A is the perspective schematic view of displaying according to the topology example of the chip of laser of the first embodiment.Fig. 5 B is the schematic sectional view according to the topology example of the chip of laser of the first embodiment.As shown in the perspective view of Fig. 5 A, according to the chip of laser 10 of the present embodiment, have: resilient coating 12 be layered on N-shaped GaN substrate 11, and the N-shaped GaN that is 0.2 μ m by thickness forms; N-shaped outer covering layer 13, be layered on resilient coating 12, and by thickness, be the N-shaped Al of 2.3 μ m
0.06Ga
0.94N forms; N-shaped guide layer (guide layer) 14, be layered on N-shaped outer covering layer 13, and the N-shaped GaN that is 20nm by thickness forms; Multiple quantum well active layer 15, by replace on the N-shaped guide layer stacked for the thickness of GaN/InGaN/GaN/InGaN/GaN/InGaN/GaN be that the InGaN of 4nm and GaN that thickness is 8nm form; Protective layer 16, be layered on multiple quantum well active layer 15, and the GaN that is 70nm by thickness forms; Current barrier layer 17, be layered on protective layer 16, and by thickness, be the p-type Al of 20nm
0.3Ga
0.7N forms; P-type outer covering layer 18, be layered on current barrier layer 17, and by p-type Al
0.05Ga
0.95N forms, and the top of this p-type outer covering layer 18 has the bar shaped of extending on assigned direction; And p-type contact layer 19, be layered on the bar shaped part of p-type outer covering layer 18, and the p-type GaN that is 0.1 μ m by thickness forms.
These layers 12 to 19 are formed on substrate 11 continuously by epitaxial growth.The bar shaped vallum 20 that consists of p-type contact layer 19 and part p-type outer covering layer 18 forms like this, forms continuously each of the layer 12 to 19 that comprises p-type contact layer 19 by epitaxial growth, then by etching, removes p-type outer covering layer 18 and p-type contact layer 19.The oscillation wavelength that has 405nm according to the chip of laser 10 of the present embodiment, and the width of vallum is 1.2 μ m to 2.4 μ m, for example about 1.5 μ m.Be used for the broad area laser of illumination etc., the width of vallum can be 3 μ m to 50 μ m.In addition, as shown in Figure 5A, vallum 20 can have platform shape (mesa shape).
Chip of laser 10 has: dielectric film 21, and by SiO
2/ TiO
2Form, and form the both sides of filling vallum 20; P electrode 22, be comprised of Pd/Mo/Au, and be formed on vallum 20 and dielectric film; And n electrode 23, formed by Hf/Al, and be formed on substrate 11 and be formed with on the surface of surface opposite of resilient coating 12.
As illustrated after a while, upper diaphragm and the light absorping film that is formed on diaphragm of forming on the surface (surface A and B) of the direction that is substantially perpendicular to vallum 20 extensions.In the present embodiment, as shown in Figure 1, antiradar reflectivity film 3 and light absorping film 5 are formed on as on the surface A of luminous end surface, and high reflection film 4 is formed on surperficial B.
These nitride semiconductor layers 12 to 19 that are arranged in chip of laser 10 can be with stacked such as the technique of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride gas-phase epitaxy (HVPE) etc.Dielectric film 21 and diaphragm 3,4 can form with the various sputtering technologies such as magnetron sputtering or electron cyclotron resonace (ECR) sputter etc. or plasma enhanced chemical vapor deposition (PECVD).Metal film is such as electrode 21,22 can form with various evaporations or aforesaid various sputtering technology such as electron beam (EB) evaporation or resistance heating evaporation etc.Light absorping film 5 can be selected from the kind according to material that light absorping film adopts a kind of formation of these techniques.
The structure of diaphragm and light absorping film is as shown in the end view of Fig. 5 B.As shown in Figure 5 B, following film is formed on surface A as antiradar reflectivity film 3 according to following order: aluminum oxynitride (AlO
xN
1-x(wherein, 0＜x＜1)) film 3a, silicon nitride (SiN) film 3b and aluminium oxide (Al
2O
3) film 3c, and AlO
xN
1-xThe thickness of film 3a is 20nm, and the thickness of SiN film 3b is 200nm, and Al
2O
3The thickness of film 3c is 140nm.Light absorping film 5 is comprised of palladium (Pd) and thickness is 3.5nm.
On the other hand, high reflection film 4 is formed on surperficial B according to following order: AlO
xN
1-xFilm 4a, SiN film 4b and four groups of films, every group of film is all by silicon dioxide (SiO
2) film 4c and titanium oxide (TiO
2) film 4d composition.In addition, SiO
2Film 4e is formed on the 4th TiO
2On film 4d.AlO
xN
1-xThe thickness of film 4a is 20nm, and the thickness of SiN film 4b is 80nm, the SiO of every group
2The thickness of film 4c is 71nm, and TiO
2The thickness of film 4d is 46nm, and is formed on the 4th TiO
2SiO on film 4d
2The thickness of film 4e is 142nm.
Here, as forming diaphragm 3,4 and the example of light absorping film 5, such situation be described, wherein the ECR sputter is for the protection of film 3,4, and the EB evaporation is for light absorping film 5.At first, in order to form antiradar reflectivity film 3 on the end surface of emission side, the bar (bar) that obtains by the cleavage wafer is inserted in the film formation chamber of ECR sputtering equipment.Here, a bar has a plurality of chip of laser 10 as shown in Figure 5 of integrated connection each other, and a plurality of chip of laser 10 are connected to each other on the line of the direction that is substantially perpendicular to the ridge bearing of trend, and its surface A is in alignment with each other (align), and surperficial B is also like this.This cut apart component from chip to obtain chip of laser 10.This can be cut apart before forming diaphragm.
After this inserted the ECR sputtering equipment, nitrogen was introduced with the flow velocity of 5.2ccm, and oxygen is also introduced with the flow velocity of 0.1ccm.And in order to produce plasma, argon gas is introduced with the flow velocity of 20.0ccm.In addition, the radio frequency of 500W (RF) power is applied to the Al target, and the microwave power that applies 500W to be to produce argon plasma, and therefore forms AlO
xN
1-xFilm 3a, wherein x can control by the flow velocity of appropriate change nitrogen and oxygen.
Next, target is changed to Si, and nitrogen introduces to form SiN film 3b with the flow velocity of 5ccm.And target is changed to Al again, and oxygen introduces to form Al with the flow velocity of 5.8ccm
2O
3Film 3c.At this moment, also with the flow velocity of 20.0ccm, introduce argon gas, the RF power of 500W is applied to Si and Al target, and the microwave power that applies 500W is to produce argon plasma.
Then, the bar that is formed with antiradar reflectivity film 3 on it takes out from the ECR sputtering equipment, and the light absorping film 5 that is comprised of Pd is approximately forming at the temperature of 150 ℃ in the EB evaporation equipment.Substitute the EB evaporation equipment, can adopt the ECR sputtering equipment to form continuously light absorping film 5 on antiradar reflectivity film 3.
Similar ground, form high reflection film 4.Specifically, adopt the ECR sputtering equipment, form continuously AlO
xN
1-xFilm 4a, SiN film 4b, four groups of SiO
2Film 4c and TiO
2Film 4d, SiO
2Film 4e.Then, cut apart on it be formed with diaphragm 3,4 and the bar of light absorping film 5 to obtain chip of laser shown in Figure 5.
Next, the example of the laser device of the chip of laser 10 that acquisition like this is installed is described.In the present embodiment, adopt Fig. 6 to illustrate that chip is arranged on the situation in the posture encapsulation that there is no gas-tight seal.Fig. 6 is the perspective schematic view of the laser device in the present embodiment.
As shown in Figure 6, the laser device in the present embodiment 60 has: chip of laser 10; Sub-fixed mount (sub-mount) 61, fixed chip 10 thereon; Framework 62, the stator fixed mount 61 thereon; Paired heat radiating fin 63, integrally two ends with framework 62 provide; Lead pin (lead pin) 64, power supply is provided to chip of laser 10 by lead pin; And resin mold 65, integrally support lead pin 64a to 64c.
And, the result of having showed the driving test of continuous oscillation by the chart of the Fig. 2 for explanation basic structure of the present invention, power supply is provided to the chip of laser 60 of structure like this in this driving test., even chip of laser 60 does not have gas-tight seal, also can prevent adhering to and gathering, short device lifetime and the operation of unsettled device of pollutant that the increase with the drive current of the passage of driving time causes.
In the present embodiment, because the structure of gas-tight seal chip of laser 10 is dispensable, so laser device 60 can be made compactly.Therefore, laser device 60 can be easy to be applied to the light source for information-recording apparatus, typically is the optical pick-up of CD and DVD.
The second embodiment: next, adopt Fig. 7 that the second embodiment is described.In the present embodiment, chip of laser is arranged in the pot type encapsulation that needs gas-tight seal, and Fig. 7 is the perspective view according to the laser device of the present embodiment.The structure of the chip of laser 10a that adopts in the present embodiment is almost identical with the structure shown in Figure 5 in the first embodiment, difference is, the reflectivity of high reflection film 4 is 70% to 80%, namely carried out Change In Design so that the quantity of film that forms high reflection film 4, less than chip of laser 10 shown in Figure 5, and changes the thickness of one or more films of high reflection film 4.
In the present embodiment, light absorping film not only is formed on the antiradar reflectivity film, and is formed on high reflection film.This film and the first embodiment is similar Pd, consists of, and thickness is 4nm.
As shown in Figure 7, have according to the laser device 70 of the present embodiment: chip of laser 10a; Sub-fixed mount 71, fixed laser chip 10a thereon; Block part (block portion) 72, the stator fixed mount 71 thereon; Photodiode 73, accept the light of launching via the high reflection film side of chip of laser 10a to produce control signal; Pin 75a, be electrically connected to photodiode 73 via distribution 74a; Pin 75b, be electrically connected to chip of laser 10a via distribution 74b; Core print seat (stem) 76, block part 72 and photodiode 73 are arranged on a surface of core print seat, and by surface of core print seat and another apparent surface of core print seat, arrange pin 75b and 75a; Pin 75c, be connected to another surface of core print seat 76, with the public electrode as photodiode 73 and chip of laser 10a; Lid (cap) 77, a surface that is connected to core print seat 76 is used for gas-tight seal; And glass window 78, be arranged on and cover in 77, and the light of launching via the antiradar reflectivity film of chip of laser 10a passes this glass window.Block part 72 and core print seat 76 are integrally formed with one another, and by metal materials such as copper or iron, are made.In addition, lid 77 and pin 75a to 75c are also made by metal material.
In this structure, chip of laser 10a be connected the connection of fixed mount 71 and adopt scolder to carry out, the connection that the connection that sub-fixed mount 71 is connected with the block part and photodiode 73 are connected with core print seat is carried out with Ag cream, and their electrical connections.Because Ag cream comprises organic bond, so although by covering 77, be connected to core print seat 76 and carry out gas-tight seal, organic substance still is suspended in sealing atmosphere.And, in the structure of conventional laser apparatus, become pollutant and adhere to and be gathered in problem on the end surface of chip of laser emission side in order to alleviate organic substance, strictly control the dew point (dew point) (for example-35 ℃ or lower) of the dry air that will seal.
Yet because light absorping film is formed in the structure of lip-deep the present embodiment of diaphragm of chip of laser 10a therein, even organic substance is suspended in sealing atmosphere, they also are prevented from becoming as mentioned above pollutant and adhere to and assemble.Therefore, can gas-tight seal and strictly do not control sealing atmosphere and suppress the vapour pressure of organic substance.Therefore, can simplify production technology.In addition,, even not only adopt Ag cream but also adopt such as epoxy radicals or silicon-based adhesive etc. of other organic bond, also prevent adhering to and assembling of pollutant, and can guarantee to encapsulate the degree of inner design freedom.
In the present embodiment, photodiode 73 is accepted the light of launching by the highly reflecting films side of chip of laser 10a to produce control signal, and it is fed back to the driving arrangement (not shown) of laser device 70.Therefore, pollutant also may adhere to and be gathered on the high reflectance side, but in the present embodiment, because light absorping film also is formed on the surface of high reflection film, so prevent adhering to and assembling of pollutant.
Therefore, by the not impact of contaminated thing of light of photodiode 73 acceptance, and prevent that wrong control signal from feeding back to driving arrangement.Particularly, can prevent that to the low light level of launching by high reflection film be the misunderstanding that the weak output by laser device 70 causes, even this is due to the adhering to and assemble of pollutant, and therefore prevent that excessive electric current is provided to laser device 70.
In the structure of laser device shown in Figure 7 70, chip of laser 10a directly is electrically connected to block part 72 each other with sub-fixed mount 71, sub-fixed mount 71.Yet chip of laser 10a and block part 72 can be electrically connected to each other via distribution.
In addition, the connection that the connection of being connected with core print seat for sub-fixed mount 71 and photodiode 73 are connected with core print seat, can adopt scolder to replace Ag cream.In such structure, traditionally, because be not included in the consideration of the organic bond volatilization in Ag cream, so can obtain such result, namely needn't control the vapour pressure of organic bond in sealing atmosphere, and the dew point of the dry air of gas-tight seal can loosely be controlled (that is ,-15 ℃ or lower).
On the contrary, in structure of the present invention, because make the control for dew point self become unnecessary, so, even with adopt scolder as the present embodiment, replace the situation of Ag cream to compare, also can simplify significantly production technology.In addition, no matter whether adopt Ag cream, as insufficient in the gas-tight seal (for example welding) of operculum 77 and core print seat 76, can not obtain stable operation, therefore, even in this embodiment, need also to confirm that step is confirmed whether abundant gas-tight seal, and yield poorly.Yet,, according to structure of the present invention,, even gas-tight seal is insufficient, also can prevent adhering to and assembling of pollutant, eliminate the confirmation step and increased output.
The 3rd embodiment: next, adopt Fig. 8 that the 3rd embodiment is described.In the present embodiment, the chip of laser 10 identical with chip of laser 10 in the first embodiment is arranged in high heat load (high heat load, the HHL) encapsulation that needs gas-tight seal.Fig. 8 is the perspective schematic view of the laser device in the present embodiment.This HHL encapsulation is the encapsulation for the high output of permission watt level of illumination etc.
As shown in Figure 8, the laser device in the present embodiment 80 has: a plurality of chip of laser 10; Sub-fixed mount 81, fixed laser chip thereon; Radiator (heat spreader) 82, stator fixed mount 81 and radiations heat energy thereon; Distributing board 83, provide distribution, and power supply is provided to the parts that are arranged in encapsulation via this distribution, such as chip of laser 10 etc.; Main part 84, wherein fixed heat sink 81, distributing board and other parts; Lead pin 85, through-body part 84 is to be electrically connected to the device that is arranged in main part 84; Lid 86, be connected to main part 84 with gas-tight seal; Glass window 87, be provided at and cover in 86, and the light of launching via the antiradar reflectivity film of chip of laser 10 passes this glass window.
In laser device 80, sometimes arrange other distribution, be used for the thermistor of monitoring main part internal temperature, for reducing amber ear note (Peltier) device of temperature be used for the photodiode of monitoring luminous quantity, but in order to be easy to explanation, these members are not shown in Fig. 8.A plurality of lead pin 85 are corresponding to they device and chip of laser 10 separately, and power supply is provided to each via each lead pin corresponding to device and installs to move this device.In addition, also via these lead pin, export according to the control signal of internal temperature and light output acquisition, and feed back to the driving arrangement (not shown) of laser device 80.
In such structure of laser device 80,, because a plurality of device need to be fixed on main body, have and much want bonding place, and therefore need a large amount of adhesives.In addition, because inner distribution is coated with vinyl compound (vinyl), i.e. organic substance, so there are a lot of contamination sources.
Yet; in the present embodiment, even at light absorping film, be formed in the lip-deep structure of diaphragm of chip of laser 10, even organic substance is suspended in inside or bad connection; prevent that also pollutant from adhering to and assembling, and can move this device and move and do not bother.Specifically, can prevent the output of the reduction that is caused by the poor sealing that causes of lid 86 insufficient connections of with main part, being connected, and also can prevent from adhering to and assembles by pollutant on chip of laser the irregular operation that the drive current that causes increases and installs.
As in a second embodiment, when photodiode is arranged on the light time of passing through the high reflection film side of chip of laser in encapsulation with acceptance, chip of laser can be constructed as the second embodiment.Specifically, the reflectivity of high reflection film can be fabricated to 70% to 80%, and light absorping film can be formed on the surface of high reflection film.
Similar with above-mentioned HHL encapsulation, the holographic laser apparatus that uses in the light source of the information-recording apparatus such as optical pick-up etc. also has such structure, wherein except chip of laser, also comprise a plurality of devices (Optical devices are for example for detection of the photodiode of signal, or hologram apparatus etc.).Yet, or in such device, can adopt light absorping film to be formed on chip of laser on diaphragm.And, can prevent the reduction of the output that is caused by bad gas-tight seal, and can prevent by the increase of adhering to and assemble the drive current that causes of the pollutant on chip of laser and the irregular operation of device.
The 4th embodiment: in the first to the 3rd embodiment, the topology example of chip and encapsulation has been described mainly.Yet, in the 4th to the 13 embodiment below, antiradar reflectivity film on the emission side end surface that is formed on chip of laser and the topology example of light absorping film are described.The structure of antiradar reflectivity film and light absorping film only is described hereinafter.Chip, high reflection film and encapsulation can have any structure.In addition, the combination of film is only example, and other combination also can bring effect of the present invention.
In the 4th embodiment, the lip-deep antiradar reflectivity film that is formed on emission side is made by according to following order, forming following film: the aluminium nitride on end surface (AlN) film/silicon nitride (SiN) film/aluminium oxide (Al
2O
3) film.At the uppermost Al that forms the antiradar reflectivity film
2O
3Form gold (Au) film on film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of Au film is 4.5nm.
The AlN film close that is formed on the end surface of emission side is adhered to the nitride-based semiconductor that forms chip and other film that forms the antiradar reflectivity film.Therefore,, by forming the AlN film, can prevent antiradar reflectivity film stripped end surface and increase output.In addition,, by end surface and the AlN film of tight bond emission side, can prevent from occurring such as reactions such as oxidations on end surface, and therefore suppress the change of properties of the end surface that is caused by this reaction.Because by the change of properties that prevents end surface, suppressed non-radiative compound generation on the end surface, so prevented because non-radiative compound increasing sharply produces serious optical damage (the catastrophic optical damage that heat is caused by the end surface that melts, COD) generation, and therefore make the stable operation of device become possibility.AlO
xN
1-xAlso with the AlN film, have identical characteristic, and by using the film that is formed by this material can obtain identical effect.
In addition, because the SiN film has little thermal coefficient of expansion, so, even form the light absorping film that produces heat, also can keep the structure of diaphragm.In addition, the SiN film has good moisture resistivity (resistance to moisture), and it can prevent that also the character of end surface from being changed by water content in end surface.Therefore, can obtain stable operation (particularly, under constant light output, preventing the increase along with the passage drive current of driving time).Silicon oxynitride (SiO
xN
1-x(wherein, 0＜x＜1)) also with SiN, have identical characteristic, and by using the film that is formed by this material can obtain identical effect.And, preferably adopt such structure, wherein SiN or SiO on the end surface of light-emitting area side
xN
1-xWith AlO
xN
1-xPerhaps AlN uses together, specifically, and SiO
xN
1-xPerhaps SiN is interposed in light absorping film and AlO
xN
1-xBetween, perhaps between light absorping film and AlN, this is because this can obtain more stable device operation.
Here, can adopt such double-decker, wherein SiO
xN
1-xPerhaps SiN is formed directly on semi-conductive end surface, and light absorping film further is formed on SiO
xN
1-xPerhaps on SiN.And other film can be formed on semiconductor and SiO such as oxide-film (for example, aluminium oxide, silica or titanium oxide etc.) and nitride film (for example, aluminium nitride, silicon nitride or titanium nitride etc.)
xN
1-xBetween, perhaps between semiconductor and SiN.In addition, other film is such as oxide-film or nitride film etc. can be formed on SiO
xN
1-xAnd between light absorping film, perhaps between SiN and light absorping film.As mentioned above, SiO
xN
1-xPerhaps SiN preferably is interposed between semi-conductive end surface and outmost light absorping film, and this is because improved the moisture resistivity to water content that becomes problem in non-level Hermetic Package this moment and as the Si of one of pollutant, be the gathering of material.
, by forming the Au film as light absorping film on the low-emissivity film surface, can prevent that pollutant from adhering to and assembling on low-reflection film and light absorping film.Therefore, can obtain to prevent effect with the irregular operation of the increase of the passage drive current of driving time and device.As mentioned above, by forming diaphragm and light absorping film, even drive in air atmosphere, laser device also has the long-life, and can stable operation.
Even when the thickness of Au film is changed into 1nm, 2nm and 7nm, also can obtain effect same as described above.
The 5th embodiment: in the 5th embodiment, the material that is formed on the antiradar reflectivity film on the end surface of emission side is identical with the 4th embodiment's.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.Platinum (Pt) film is formed on the uppermost Al that forms the antiradar reflectivity film
2O
3On film as light absorping film.The thickness of AlN film is 6nm, and the thickness of SiN film is 100nm, Al
2O
3The thickness of film is 200nm, and the thickness of Pt film is 4nm.
The structure of the light absorping film that forms by above-mentioned antiradar reflectivity film with by Pt, the same with first to fourth embodiment, can be by close adhesion antiradar reflectivity film to end surface and by preventing that adhering to and assemble pollutant on antiradar reflectivity film and light absorping film obtains effect.In addition, in the present embodiment, even when AlN film and SiN film manufacture than thin in the 4th embodiment, also can obtain identical effect.
, even at the thickness of Pt film, be light absorping film while changing to 1nm, 2nm and 8nm, also can obtain effect same as described above.
The 6th embodiment: in the 6th embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th and the 5th embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, titanium (Ti) film is formed on the uppermost Al that forms the antiradar reflectivity film
2O
3On film, and the gold (Au) film further be formed on the Ti film, this multilayer film that has provided Ti film and Au film is as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of Ti film is 1.5nm, and the thickness of Au film is 2.5nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of multilayer film, the same with the first to the 5th embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
In the present embodiment, light absorping film consists of the multilayer film of Ti film and Au film.Yet the Au film can replace with the Pt film that has a same thickness with the Au film.In the case, also can obtain identical effect.
The 7th embodiment: in the 7th embodiment, the material that is formed on the antiradar reflectivity film on the end surface of emission side is identical with the 4th to the 6th embodiment's.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, molybdenum (Mo) film is formed on the uppermost Al that forms the antiradar reflectivity film
2O
3On film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of Mo film is 4.0nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of Mo film, the same with the first to the 6th embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
Even when the Mo film thickness that is light absorping film changes to 1nm, 2nm and 12nm, also can obtain effect same as described above.
The 8th embodiment: in the 8th embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 7th embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, molybdenum (Mo) film is formed on the uppermost Al that forms the antiradar reflectivity film
2O
3On film, and the gold (Au) film further be formed on the Mo film, this multilayer film that has provided Mo film and Au film is as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of Mo film is 1.5nm, and the thickness of Au film is 2.5nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of multilayer film, the same with the first to the 7th embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
In the present embodiment, light absorping film is comprised of the multilayer film of Mo film and Au film.Yet the Au film can replace with the Pt film that has a same thickness with the Au film.In the case, also can obtain identical effect.
The 9th embodiment: in the 9th embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 8th embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, aluminium (Al) film is formed on the uppermost Al that forms the antiradar reflectivity film
2O
3On film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of Al film is 4.0nm.
The said structure of the light absorping film that forms by the antiradar reflectivity film with by Al, the same with the first to the 8th embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
The tenth embodiment: in the tenth embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 9th embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, with AlO
xOxygen deprivation (oxygen-depleted) the aluminium film of (0＜x＜1.5) expression, namely the oxygen deprivation film of aluminium oxide is as light absorping film, and this light absorping film is at the uppermost Al that forms the antiradar reflectivity film
2O
3On film, AlO here
xBe compound, its component is at Al: O=2: 3 stoichiometric compositions departs from the direction of the little component of oxygen quantitative change.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, AlO
xThe thickness of film is 60nm.
As mentioned above, Al
2O
3Basically be transparent to laser.Yet, because oxygen deprivation film AlO for example
xSuch film absorbs light Deng well, so can be used as light absorping film.
At AlO
xIn the manufacturing process of film, for example, when using the ECR sputtering equipment, by reduction, form Al
2O
3The flow velocity of the oxygen of film (for example 5.8ccm), to for example 4.3ccm, can be easy to obtain AlO
xFilm.The flow velocity of other condition such as argon gas and the power supply that provides etc. can with the first embodiment in describe those are identical, namely the flow velocity of argon gas can be 20ccm, the RF power that is applied to the Al target can be 500W, the microwave power that produces plasma can be 500W.
By the antiradar reflectivity film with by AlO
xThe said structure of the light absorping film that film forms, the same with the first to the 9th embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
And, because by AlO
xThe light quantity that film absorbs can be controlled by x value and thickness in component, so it can be than only by the light absorping film of the control absorbing amount such as metal film, more strictly being adjusted.For example, in the situation that light absorption wishes to be suppressed to certain limit, when using metal film, must selective membrane formation method and the film formation condition to form thin and uniform film.Yet, when using AlO
xDuring film, even thick film also can change the x value to the value near 1.5, and be easy to adjust the absorption of light.
When adopting sputtering equipment because antiradar reflectivity film and light absorping film can be only by setting Al target and Si target and the flow velocity by appropriate change argon, oxygen and every kind of gas of nitrogen forms, so can form film with continuous technique.
Replace adopting AlO
x, as light absorping film, can adopt with SiO
xThe oxygen deprivation silicon oxide film (for example, thickness is 8nm) of (0＜x＜2) expression, wherein SiO
xBe compound, its component is at Si: O=1: 2 stoichiometric compositions departs from the direction of the little component of oxygen quantitative change.As mentioned above, even adopting SiO
xDuring film, also can obtain and adopt AlO
xSituation in identical effect.
Replace adopting the oxygen deprivation film, can adopt with AlN
x(0＜x＜1) expression poor nitrogen aluminium nitride film or with SiN
x(the poor nitrogen silicon nitride film of the expression of 0＜x＜1.33...), wherein AlN
xBe compound, its component is at Al: N=1: 1 stoichiometric compositions departs from the direction of the little component of nitrogen quantitative change, and SiN
xBe compound, its component is at Si: N=3: 4 stoichiometric compositions departs from the direction of the little component of nitrogen quantitative change.
AlN only absorbs the light of launching on a small quantity.Yet, by adopting poor nitrogen film, can with the same absorbing amount that increases of the tenth embodiment that adopts the oxygen deprivation film, and can be used as light absorping film.In the situation that adopt sputtering equipment, the flow velocity by making nitrogen, lower than the flow velocity that forms the AlN film, can be easy to form poor nitrogen film.SiN is poor nitrogen and the little state of absorbing amount.Therefore, work as SiN
xDuring as light absorping film, preferably make the x value less.
And, similar with the oxygen deprivation film, because by AlN
xPerhaps SiN
xThe light quantity that absorbs of poor nitrogen film can be by x value and the film thickness monitoring in component, so can be than absorbing amount only the light absorping film of the THICKNESS CONTROL by metal film etc. more strictly adjusted.Even in forming two kinds of light absorping films, when adopting sputtering equipment, because antiradar reflectivity film and light absorping film both can be only by setting Al target and Si target and by the flow velocity that changes suitably argon, oxygen and every kind of gas of nitrogen, forming, so can form film with continuous technique.
The 11 embodiment: in the 11 embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the tenth embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, titanium nitride (TiN) film is formed on the Al of the uppermost film that forms the antiradar reflectivity film
2O
3On film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of TiN film is 20nm.
Sputtering technology also can be used to form the TiN film.In above-mentioned ECR sputtering equipment, the TiN film can be by introducing nitrogen and argon gas and adopting the sputter of Ti target can be easy to form.
The said structure of the light absorping film that forms about the antiradar reflectivity film with by the TiN film, the same with the first to the tenth embodiment, can obtain effect to end surface and by preventing that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
Be not limited to TiN film, above-mentioned AlN
xFilm and SiN
xFilm, namely even the nitride of other metal (for example, zirconium (Zr), yttrium (Y), niobium (Nb), hafnium (Hf), tantalum (Ta), tungsten (W) etc.) also can absorb the light of emission, and can be used as light absorping film.In addition, these films can be used as poor nitrogen film.
The 12 embodiment: in the 12 embodiment, identical in the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 11 embodiment.Specifically, on the end surface of emission side according to following order the film below forming: the AlN film on end surface/SiN film/Al
2O
3Film.In the present embodiment, palladium oxide film is as the Al of the uppermost film that forms the antiradar reflectivity film
2O
3Light absorping film on film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al
2O
3The thickness of film is 80nm, and the thickness of palladium oxide film is 3nm.
Method as forming palladium oxide film, for example, can adopt such method, wherein after the Pd metal film forms, it is used in oxygen plasma oxidation in plasma production device, to form palladium oxide film.Also can be by adopting the palladium oxide target and evaporating and sputter formation palladium oxide film.In addition, also can form film when introducing oxygen, and also can adopt oxygen plasma to carry out oxidation after this film forms.
The thickness t of palladium oxide film is desirably in the scope of 0nm＜t≤100nm.If greater than 100nm, light absorbing percentage increases, and the light extraction efficiency decay.More the scope of expectation is 0nm＜t≤50nm, and the scope of more expectation is 0nm＜t≤10nm.The light absorping film that only adheres to seldom just can bring effect.
In the above-described embodiments, palladium oxide is as light absorping film.Yet, also can adopt the oxide of metal such as rhodium (Rh), iridium (Ir), osmium (Os) or ruthenium (Ru) etc.In addition, can make up the oxide of a plurality of these metals.
The 13 embodiment: in the 13 embodiment, the film below starting to form according to following order by the end surface from emission side is made antiradar reflectivity film: AlO
xN
1-xFilm/SiN film.Palladium (Pd) film is as light absorping film, and on the surface that is formed on the SiN film, this SiN film is the uppermost film that forms the antiradar reflectivity film.AlO
xN
1-xThe thickness of film is 20nm, and the thickness of SiN film is 160nm, and the thickness of Pd film is 5nm.This chip of laser as shown in figure 11.Figure 11 is the perspective schematic view according to the chip of laser of the 13 embodiment, and has showed the schematic enlarged drawing that forms a side of light absorping film.
As shown in figure 11, in the chip of laser 11 according to the present embodiment, be formed on the lip-deep light absorping film 112 of antiradar reflectivity film 111 partly aggegation (reveal, dotting).As the method for revealing, the method for driving laser apparatus is for example arranged.When vibrating, the laser of part emission is absorbed by the palladium that forms light absorping film 112, and the part light absorping film produces heat when the driving laser apparatus.Light absorping film is by the focusization that is produced, and as shown in figure 11, can obtain the chip of laser 110 that light absorping film is partly revealed.
Reveal and mainly occur in the zone that laser passes.In this zone, because light absorping film 112 is fully heated by laser, thus promoted to reveal, and light absorping film 112 turned to granule (lump) by point, therefore obtains light absorption film spot 112b.In addition, in the zone that forms light absorption film spot 112b, because form palladium aggegation when forming light absorption film spot 112b of light absorping film 112, so light absorping film 112 becomes discontinuous (thickness is 0 part appearance).In this discontinuous regional 112a, part SiN film is that the uppermost film of antiradar reflectivity film 111 is exposed.On the other hand, in the continuum 112c except discontinuity zone 112a, light absorping film 112 is continuous films, and antiradar reflectivity film 111 does not expose.
Revealing of light absorping film 112 can be carried out approximately two hours under with 30mW, the continuous oscillation of light output of 25 ℃.Employing Figure 12 illustrates the result with the performance test of 20mW, 25 ℃ of Continuous Drive chip of laser of revealing 110 of approximately 1000 hours.Figure 12 is at the lower microphoto of taking of transmission electron microscope (TEM), and has showed the cross section according to the chip of laser 110 of thriteenth embodiment of the invention.Specifically, Figure 12 has showed along the A-A face of chip of laser 110 shown in Figure 11 and has cutd open the cross section of getting.
As shown in figure 12, thickness is the AlO of 20nm
xN
1-xFilm 111a is formed on the end surface of emission side of nitride-based semiconductor 113, and thickness is that the SiN film 111b of 160nm further is formed on the upper surface of film 111a.In addition, formed by palladium and thickness is that the light absorping film 112 of 5nm is formed on the upper surface of SiN film 111b.Light absorping film 112 is included in its zone discontinuity zone 112a and the continuum 112c with light absorption film spot 112b.The size of light absorption film spot 112b depend on formation light absorping film 112 thickness and and fall into about 0.5nm to the scope of about 50nm.
Even when the chip of laser 110 that the light absorping film 112 that drives is as shown in figure 12 partly revealed, prevent that also pollutant from adhering to and being gathered on the end surface of chip of laser 110.In other words,, even light absorping film 112 is not pantostrat and have discontinuously granule, can prevent that also pollutant from adhering to and being gathered on end surface.
In addition, in the present embodiment, when forming light absorption film spot 112b, form around zone disappear (thickness be 0) of the part metals (palladium in the present embodiment) of light absorping film 112 from light absorption film spot 112b.Therefore, the slope efficiency (slop efficiency) when laser drives may improve, and drive current can reduce.
In addition, as in the present embodiment, when the laser with emission was revealed, the part that light passes can be affirmed and easily be revealed.
In the present embodiment,, as the method for revealing, adopt the method for with the laser of launching, carrying out aggegation.Yet, the method that can adopt whole chip of laser 110 to be heated to reveal.In the case, different from the structure shown in Figure 11 and 12, discontinuity zone 112a extends whole light absorping film 112.Yet, even in this case, as at above-mentioned each embodiment, can obtain the effect that prevents that pollutant from adhering to and assembling.
Can reveal by from outside, to light absorping film 112, applying energy such as light or heat etc.In the case, discontinuity zone 112a can be formed on any position.Reveal and can carry out when forming light absorping film 112.In other words, can carry out the formation of film, carry out simultaneously aggegation.In addition,, in order to reveal, can adopt any method, at least part of light absorping film 112 wherein, the zone passed of the laser of emission is finally revealed to become discontinuous especially at least partly.
, even light absorping film 112 does not provide discontinuity zone 112a, also can obtain the effect of the present embodiment.For example, can adopt such structure, wherein light absorping film 112 has pantostrat, and the granule of similar light absorption film spot 112b is produced on the surface of pantostrat.Even in such structure, suppress light absorption because if pantostrat is fully thin, so the effect that drive current reduces as form the above-mentioned situation that does not connect regional 112a obtained.In addition, even at discontinuity layer, be made abundant when thin, because formed the granule that the material by light absorping film 112 forms, so this can prevent adhering to of pollutant and assemble.
The kind of the thickness of light absorping film 112, the kind of material therefor and matrix (base) layer etc. can suitably be selected, with the size at control point etc.In the present embodiment, palladium is as the metal of revealing.Yet, can adopt gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), osmium (Os) or ruthenium (Ru) etc.
Revise: in the first to the 13 above-mentioned embodiment, although by several films, form the antiradar reflectivity film, it can form with a kind of film.In addition; as diaphragm, can adopt such film, this film forms by comprising the oxide that is selected from least a element in Al, Si, Hf, Ti, Nb, Ta, W and Y; formed by the nitride that comprises Al or Si etc., perhaps by the nitrogen oxide that comprises Al or Si etc., formed.
In the 4th to the 13 embodiment, the structure of antiradar reflectivity film side has only been described.Yet in the situation that part light is also launched by high reflection film, light absorping film can be formed on high reflection film., by adopting such structure, can prevent that pollutant from adhering to and being gathered in the highly reflecting films side.The film of enhancing bonding force is AlN film or AlO for example
xN
1-xFilms etc. can be used as the part high reflection film and are formed directly on the end surface that forms high reflection film.In addition, high reflection film can be provided with SiN film or SiO
xN
1-xFilm etc.
And, be formed with and comprise SiN or SiO forming light absorping film and diaphragm
xN
1-xDeng the structure of film in because can reduce the increase of drive current, so diaphragm preferably is provided with the film that is comprised of such material.Especially be SiO greater than 20nm adopting thickness
xN
1-xIn the situation of film, can obtain to suppress the effect that drive current increases.Therefore, SiO
xN
1-xThe preferred thickness of film is greater than 20nm, more preferably greater than 80nm.
In addition, desirable is that the scope of the thickness t of light absorping film is 0nm＜t≤100nm.If it is greater than 100nm, light absorbing percentage increases, and the light extraction efficiency decay.More the scope of expectation is 0nm＜t≤50nm, and the scope of further expectation is 0nm＜t≤10nm.The light absorping film that only adheres to seldom just can bring effect.
In addition, material as light absorping film, preferred Au, Pt, Rh, Ir, Pd, Os or the Ru etc. of adopting, this is very low because of the attachment coefficient (collection coefficient) of the Si based compound as one of pollutant, and such compound is difficult to assemble.The same with the 6th and the 8th above-mentioned embodiment, when light absorping film formed with two-layer or multilayer film, the film that such metal forms was preferably used as the outermost tunic, and this is because obtained the effect that contaminant restraining adheres to and assembles.
Light absorping film can have two or more metal manufacturings, can be perhaps the multilayer film of the combination of several films, such as the combination of metal film and nitride film, and the combination of nitride film and oxygen deprivation film etc.
The present invention relates to the method for semiconductor light-emitting apparatus and manufacturing semiconductor light-emitting apparatus, more specifically, relate to the nitride semiconductor laser device of launching short-wavelength light, typically be and have semiconductor light-emitting apparatus and the manufacture method thereof of adhering to and assembling such as the luminous component of the pollutant of silica etc.
Claims (6)
1. light-emitting device comprises:
Chip, be used for luminous; With
Light absorping film, be formed on the outmost surface of the end surface that emission is passed through from the light of this chip, the light of being launched with absorption portion, wherein
This light absorping film has the nitride film that is comprised of nitride, and this nitride film forms by comprising the nitride that is selected from least a element in the group that aluminium, titanium, zirconium, yttrium, niobium, hafnium, tungsten and tantalum form; And
Produce heat by the light absorping film absorption portion from the light of this chip emission, prevent that pollutant from adhering to and being gathered on end surface.
2. a light-emitting device, comprise
Chip, be used for luminous; With
Light absorping film, be formed on the outmost surface of the end surface that emission is passed through from the light of this chip, the light of being launched with absorption portion, wherein
This light absorping film is to consist of metal;
At least partly this light absorping film is non-uniform areas with regard to thickness, and this non-uniform areas of this light absorping film is discontinuity zone, and this light absorping film is discontinuous in this discontinuity zone; And
Pass through this discontinuity zone at least partly from the light emission of this chip emission at least partly; And
Produce heat by the light absorping film absorption portion from the light of this chip emission, prevent that pollutant from adhering to and being gathered on end surface.
3. light-emitting device according to claim 1 also comprises:
Diaphragm, be formed on the end surface of this chip that passes through from the light emission of this chip, to protect this end surface, wherein
This light absorping film is formed on the surface of this diaphragm.
4. light-emitting device according to claim 3,
Wherein this diaphragm has the oxide-film that forms by comprising the oxide that is selected from least a element in the group that aluminium, titanium, yttrium, silicon, niobium, hafnium and tantalum form.
5. light-emitting device according to claim 3,
Wherein this diaphragm has the film of at least a compound in the nitrogen oxide of the nitrogen oxide of nitride, aluminium of the nitride that comprises aluminium, silicon and silicon.
6. light-emitting device according to claim 1,
Wherein this chip comprises the layer that consists of nitride-based semiconductor.
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| JP156453/07 | 2007-06-13 | ||
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| JP2008075804A JP5122337B2 (en) | 2007-06-13 | 2008-03-24 | Light emitting device and method for manufacturing light emitting device |
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| CN2008101254599A Active CN101325310B (en) | 2007-06-13 | 2008-06-13 | Light emitting device and method of fabricating a light emitting device |
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| JP2011151310A (en) * | 2010-01-25 | 2011-08-04 | Renesas Electronics Corp | Nitride-based semiconductor light emitting element and light emitting element which loads nitride-based semiconductor light emitting element on package |
| US8565280B2 (en) | 2010-09-14 | 2013-10-22 | Sanyo Electric Co., Ltd. | Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same |
| CN102005695A (en) * | 2010-10-25 | 2011-04-06 | 江苏飞格光电有限公司 | SLD (super radiation laser) TO-CAN coaxial miniaturized encapsulating method |
| JP2012178434A (en) * | 2011-02-25 | 2012-09-13 | Nichia Chem Ind Ltd | Semiconductor laser device |
| JP2013041005A (en) * | 2011-08-11 | 2013-02-28 | Sharp Corp | Optical component, and optical module |
| CN108474872B (en) * | 2016-07-12 | 2020-04-21 | 夏普株式会社 | Antifouling film |
| JP2020129653A (en) * | 2019-02-08 | 2020-08-27 | シャープ株式会社 | Light emitting device and manufacturing method thereof |
| DE102020127450A1 (en) | 2020-10-19 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICE |
| CN116569345A (en) * | 2020-11-27 | 2023-08-08 | 苏州晶湛半导体有限公司 | GaN-based laser and manufacturing method thereof |
| DE102020133174A1 (en) | 2020-12-11 | 2022-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING A SEMICONDUCTOR LASER |
| WO2024004677A1 (en) * | 2022-06-28 | 2024-01-04 | パナソニックホールディングス株式会社 | Semiconductor laser element |
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| JP5122337B2 (en) | 2013-01-16 |
| CN101847824A (en) | 2010-09-29 |
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| CN101325310A (en) | 2008-12-17 |
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| JP5514273B2 (en) | 2014-06-04 |
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