JP2022094286A - Manufacturing method of light emitting device and manufacturing method of light emitting module - Google Patents

Abstract

To provide a manufacturing method of a light emitting device and a manufacturing method of a light emitting module which can manufacture a light emitting device and a light emitting module at low cost.SOLUTION: A manufacturing method of a light emitting device that includes a light emitting element including a semiconductor laminate having a first surface, a second surface on the opposite side of the first surface, and a side surface between the first and second surfaces, and an electrode arranged on the second surface of the semiconductor laminate, and in which the side surface of the semiconductor laminate is covered with a resin member includes the steps of forming a resin layer in the A stage state on a support, placing the light emitting element on the surface of the resin layer with the surface of the resin layer facing the first surface, heating the resin layer at first temperature to reduce the viscosity of the resin layer and submerging the light emitting element such that the second surface of the semiconductor laminate is exposed by the weight of the light emitting element, and forming the resin member by heating the resin layer at second temperature higher than the first temperature and curing the resin layer with the second surface exposed.SELECTED DRAWING: Figure 1C

Description

The present disclosure relates to a method for manufacturing a light emitting device and a method for manufacturing a light emitting module.

Light emitting devices and light emitting modules including light emitting elements are known (see, for example, Patent Document 1 and Patent Document 2).

JP-A-2017-228657 Japanese Unexamined Patent Publication No. 2018-133304

With the expansion of applications of light emitting devices and light emitting modules including light emitting elements, inexpensive light emitting devices and light emitting modules are required.

Therefore, an object of the present disclosure is to provide a method for manufacturing a light emitting device and a method for manufacturing a light emitting module, which can manufacture a light emitting device and a light emitting module at low cost.

In order to achieve the above object, the method for manufacturing a light emitting device according to the present disclosure is between the first surface, the second surface on the opposite side of the first surface, and the first surface and the second surface. A light emitting device having a light emitting element including a semiconductor laminate including a side surface of the semiconductor laminate and an electrode arranged on the second surface of the semiconductor laminate, the side surface of the semiconductor laminate being covered with a resin member. In the manufacturing method, the step of arranging the resin layer in the A stage state on the support and the light emitting element on the upper surface of the resin layer with the upper surface of the resin layer and the first surface facing each other. And the step of placing the resin layer, the resin layer is heated at the first temperature to reduce the viscosity of the resin layer, and the second surface of the semiconductor laminate is exposed by the weight of the light emitting element. A step of submerging the light emitting element and a step of heating the resin layer at a second temperature higher than the first temperature and curing the resin layer in an exposed state to form the resin member. ,including.
Further, the method for manufacturing a light emitting module according to the present disclosure is a semiconductor lamination including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface. A step of preparing a light emitting element including a body and an electrode arranged on the second surface of the semiconductor laminate, and at least the second surface is exposed to the outside, a first main surface, and the first surface. 1 A step of preparing a light guide plate having a second main surface on the opposite side of the main surface and having a recess on the first main surface, and a step of arranging a resin layer in the state of A stage in the recess. The step of placing the light source on the upper surface of the resin layer with the upper surface of the resin layer and the first surface of the light emitting element facing each other, and the step of heating the resin layer at the first temperature, the said step. A step of lowering the viscosity of the resin layer and submerging the light source so that the second surface of the semiconductor laminate is exposed by the weight of the light source, and a step of lowering the resin layer to a temperature higher than the first temperature. It includes a step of forming the resin member by heating at two temperatures and curing the second surface in an exposed state.

As described above, the light emitting device and the light emitting module can be manufactured at low cost.

It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the light emitting device 100 obtained by the manufacturing method of the light emitting device which concerns on Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on the modification 3 of Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing method of the light emitting device which concerns on the modification 3 of Embodiment 1. FIG. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on the modification 4 of Embodiment 1. FIG. It is a schematic cross-sectional view which shows an example of the light emitting device obtained by the manufacturing method of the light emitting device which concerns on the modification 5 of Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 2. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 2. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 2. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on Embodiment 2. FIG. It is a schematic sectional drawing which shows an example of the light emitting device 200 obtained by the manufacturing method of the light emitting device of Embodiment 2. It is a schematic cross-sectional view which shows an example of the manufacturing process of the light emitting device which concerns on the modification of Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the light emitting device obtained by the manufacturing method of the light emitting device which concerns on the modification of Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting device which concerns on another modification of Embodiment 1. FIG. It is a schematic cross-sectional view which shows an example of the light emitting device obtained by the manufacturing method of the light emitting device which concerns on another modification of Embodiment 1. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 3. FIG. FIG. 5E is a schematic cross-sectional view showing the width W1 and the height H1 of the light emitting element, the depth D33 and the width W33 of the recess 33, and the width W50 of the wall portion between the adjacent recesses 33. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 4. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 4. FIG. It is a schematic sectional drawing which shows an example of the manufacturing process of the light emitting module which concerns on Embodiment 4. FIG.

Hereinafter, embodiments for carrying out the invention according to the present disclosure will be described with reference to the drawings. The method for manufacturing a light emitting device and the method for manufacturing a light emitting module described below are for embodying the technical idea of the invention according to the present disclosure, and are related to the present disclosure unless otherwise specified. The invention is not limited to the following.
In each drawing, members having the same function may be designated by the same reference numeral. Although it may be divided into embodiments for convenience in consideration of explanation of the main points or ease of understanding, partial replacement or combination of the configurations shown in different embodiments is possible. In the embodiment described later, the description of the matters common to the above will be omitted, and only the differences will be described. In particular, similar actions and effects with the same configuration will not be mentioned sequentially for each embodiment. The size and positional relationship of the members shown in each drawing may be exaggerated for the sake of clarity. Further, as a cross-sectional view, an end view showing only the cut surface may be used.

<Embodiment 1>
The method for manufacturing the light emitting device according to the first embodiment according to the present disclosure is as follows: (i) For example, a first surface 11 which is a light emitting surface, a second surface 12 on the opposite side of the first surface 11, and a first surface 11 and a second surface. Light emitting with a semiconductor laminate 10 including a side surface 13 between the surfaces 12 and an electrode 20 including a first electrode 21 and a second electrode 22 arranged on the second surface 12 of the semiconductor laminate 10. This is a method for manufacturing a light emitting device 100 including an element 1 and (ii) a resin member 30 that covers at least a side surface 13 of the semiconductor laminate 10.
The method for manufacturing the light emitting device according to the present disclosure is as follows.
(A) A step of arranging the resin layer 31 in the A stage state on the support 35, and
(B) The light emitting element 1 is placed on the upper surface of the resin layer 31 with the upper surface of the resin layer 31 in the state of the A stage arranged on the support 35 and the first surface 11 of the light emitting element 1 facing each other. Process and
(C) The resin layer 31 is heated at the first temperature to reduce the viscosity of the resin layer 31, and the second surface 12 of the semiconductor laminate 10 is exposed from the resin layer 31 by the weight of the light emitting element 1. The process of submerging the light emitting element 1 and
(D) A step of heating the resin layer 31 at a second temperature higher than the first temperature and curing the resin layer 12 in a state where the second surface 12 is exposed from the resin layer to form the resin member 30.
including.
Hereinafter, each step will be described in detail.

(A) Step of Arranging the Resin Layer 31 Here, by pasting the resin sheet in the A stage state prepared in advance on the support 35, the resin layer 31 in the A stage state as shown in FIG. 1A is arranged. do. For attaching the resin sheet, for example, a vacuum laminator can be used. Specifically, the pressure is reduced to a predetermined degree of vacuum and pressed by a diaphragm to pressurize. The arrangement of the resin layer 31 in this step is not limited to the attachment of the resin sheet. For example, by applying the uncured resin on the support 35, the resin in the A stage state is applied. Layer 31 may be arranged. Here, the state of the A stage means an uncured state. The second surface 12 of the semiconductor laminate 10 is exposed based on the specific gravity of the resin layer 31 and the weight of the light emitting device 1 in the A stage state, specifically, the viscosity of the resin layer 31 in the uncured state. As described above, the light emitting element 1 is adjusted so as to sink due to its own weight. Further, the A stage is not in a liquid state and has no fluidity. For example, a liquid resin material containing a solvent such as cyclohexane is applied onto the support, and then most of the solvent is volatilized so that the resin does not flow on the support in the A stage state or the uncured state. And.

Further, as the resin constituting the resin layer 31, a thermosetting resin such as a silicone resin, an epoxy resin, an acrylic resin or the like can be used. As a method for arranging the resin layer 31, for example, roll coating, spraying, compression molding, or the like can be used. The resin layer 31 is preferably thicker than the thickness t (distance between the first surface 11 and the second surface 12) of the semiconductor laminate 10 of the light emitting element 1. Alternatively, the resin layer 31 may be thinner than the thickness t of the semiconductor laminate 1 of the light emitting element 1. When the resin layer 31 is thinner than the thickness t of the semiconductor laminate 1 of the light emitting element 1, in the step of sinking the light emitting element 1 described later, the light emitting element 1 is provided by utilizing the wetting of the resin to the side surface 13. The entire side surface 13 of the semiconductor laminate 10 can be arranged so as to be covered with the resin layer 31.

(B) Step of placing the light emitting element 1 Here, as shown in FIG. 1B, the upper surface of the resin layer 31 and the light emitting element are maintained while maintaining the state of the A stage of the resin layer 31 arranged on the support 35. The light emitting element 1 is placed on the upper surface of the resin layer 31 so as to face the first surface 11 of 1. The light emitting element 1 is placed at a predetermined interval according to the size of the target light emitting device 100. Specifically, for example, the light emitting elements 1 are arranged in a matrix at predetermined intervals in consideration of the thickness of the resin member 30 covering the side surface 13 of the semiconductor laminate 10 of the light emitting element 1.

Further, the method of mounting the light emitting element 1 on the upper surface of the resin layer 31 is not particularly limited, and the light emitting elements 1 may be mounted one by one in order, or a plurality of light emitting elements 1 may be mounted collectively. You may place it. For example, when a plurality of light emitting elements 1 are placed together, a photosensitive adhesive is applied to a support (hereinafter referred to as a second support) different from the support on which the resin layer 31 is arranged. Prepare a plurality of light emitting elements arranged via the plurality of light emitting elements. Next, by irradiating the adhesive with a laser from the second support side and peeling the plurality of light emitting elements from the second support, the light emitting element 1 can be collectively transferred to the upper surface of the resin layer 31. ..

The semiconductor laminate 10 of the light emitting element 1 includes, for example, a substrate such as sapphire or gallium nitride, an n-type semiconductor layer and a p-type semiconductor layer arranged on the substrate, and a light emitting layer sandwiched between them. Further, the light emitting device 1 includes a first electrode electrically connected to the n-type semiconductor layer and a second electrode electrically connected to the p-type semiconductor layer. The semiconductor laminate 10 does not have to be provided with a substrate. Further, the structure of the light emitting layer may be a structure having a single active layer such as a double heterostructure or a single quantum well structure (SQW), or a group of activities such as a multiple quantum well structure (MQW). It may be a structure having a group. The light emitting layer can emit visible light or ultraviolet light. The light emitting layer can emit light from blue to red as visible light. As the semiconductor laminate 13 including such a light emitting layer, for example, InxAlyGa _1-x-y N (0 ≦ x, 0 ≦ y, x + y ≦ 1) can be included. The semiconductor laminate 13 can include at least one light emitting layer capable of emitting light as described above. For example, the semiconductor laminate 13 may have a structure including one or more light emitting layers between the n-type semiconductor layer and the p-type semiconductor layer, or the n-type semiconductor layer, the light emitting layer, and the p-type semiconductor layer. The structure including the above may be repeated a plurality of times. When the semiconductor laminate 13 includes a plurality of light emitting layers, it may include light emitting layers having different emission peak wavelengths, or may include light emitting layers having the same emission peak wavelength. It should be noted that the same emission peak wavelength may have a variation of about several nm. The combination of emission peak wavelengths can be appropriately selected. For example, when the semiconductor laminate 13 includes two light emitting layers, blue light and blue light, green light and green light, red light and red light, ultraviolet light and ultraviolet light, blue light and green light, and blue light and red light. , Or a combination of green light, red light, and the like can be used to select the light emitting layer. Further, the light emitting layer may include a plurality of active layers having different emission peak wavelengths, or may include a plurality of active layers having the same emission peak wavelength.

(C) Step of submerging the light emitting element 1 Here, the resin layer 31 is heated at the first temperature to reduce the viscosity of the resin layer 31. As a result, the light emitting element 1 is submerged so that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31 due to the weight of the light emitting element 1.
At the first temperature for heating the resin layer 31, the viscosity of the resin material constituting the resin layer 31 in the A stage state decreases, and as shown in FIG. 1C, the second surface 12 of the semiconductor laminate 10 is exposed. The resin of the resin layer 31 is appropriately set so as to be in contact with the entire side surface 13 of the semiconductor laminate 10. For example, the first temperature emits light when the temperature at which the resin layer is heated is changed with respect to the type of resin material constituting the resin layer, the viscosity in the A stage state, and the shape and weight of the light emitting element. The temperature is set to a desired settling state by referring to the database in which the settling state of the element is stored. Here, the settling state of the light emitting element means the positional relationship between the upper surface of the resin layer between the light emitting elements and the electrode forming surface of the light emitting element. That is, in the reference database, for example, the temperature at which the upper surface of the resin layer between the light emitting elements placed adjacent to each other is substantially flush with the electrode forming surface of the light emitting element, and between the light emitting elements. The temperature at which the upper surface of the resin layer is located below the plane including the electrode forming surface of the light emitting element, and the upper surface of the resin layer between the light emitting elements is located above the plane including the electrode forming surface of the light emitting element. The temperature, etc. are stored, and are appropriately selected in consideration of the final shape of the light emitting device to be manufactured based on the stored information. For example, in the resin layer 31 containing a thermosetting silicone resin, epoxy resin, or acrylic resin, the first temperature is in the range of 70 ° C to 100 ° C. The heating time can be, for example, 10 minutes or more.
Further, the first temperature does not necessarily have to be maintained at a specific temperature for a predetermined time, and may be continuously increased. That is, it is sufficient that the temperature range from the temperature at which the temperature rise starts to the temperature at which the temperature rise ends (for example, the second temperature) includes a temperature range in which the light emitting element can be submerged in the resin layer in the A stage state. It is possible to achieve the subsidence state. For example, when the second temperature described later is set to 150 ° C, it is preferable to raise the temperature from about 60 ° C to 150 ° C over, for example, about 1 hour, and in particular, the temperature gradually rises from 70 ° C to 100 ° C, which includes the first temperature. It is preferable to let it.

(D) Step of Curing the Resin Layer 31 to Form the Resin Member 30 Here, the resin layer 31 is heated at a second temperature higher than the first temperature and cured in a state where the second surface 12 is exposed. .. As a result, the resin member 30 is formed.
The second temperature for curing the resin layer 31 is appropriately set based on the curing temperature of the resin material constituting the resin layer 31. For example, in the resin layer 31 containing a thermosetting silicone resin, an epoxy resin, or an acrylic resin, the second temperature is a temperature in the range of 150 ° C. to 200 ° C. The heating time can be, for example, 1 hour or more and 8 hours or less.
The rise from the first temperature in the step of submerging the light emitting element 1 to the second temperature in this step may be made to continuously raise the temperature to the second temperature without lowering the temperature from the first temperature. Alternatively, the temperature may be once lowered from the first temperature, for example, to room temperature (20 ± 5 ° C.) and then raised to the second temperature, which is appropriately set in consideration of the efficiency of the manufacturing process and the like. Can be done.

After the resin layer 31 is cured, the resin member 30 is cut between the adjacent light emitting elements 1 as shown in FIG. 1D. The side surface 13 of each light emitting element 1 is covered with a resin member 30 having a predetermined thickness in the direction in which the light emitting element 1 is adjacent to each other.
Next, as shown in FIG. 1E, the support is removed from the light emitting device.

As described above, for example, it is possible to manufacture a light emitting device including one light emitting element 1 each and the side surface 13 of the light emitting element 1 is covered with a resin member having a predetermined thickness.
In addition, this cutting step is carried out as needed. For example, by cutting the resin member so as to include one light emitting element 1, a light emitting device including one light emitting element can be obtained. Alternatively, by cutting the resin member 30 so as to include the plurality of light emitting elements 1, a light emitting device including the plurality of light emitting elements 1 can be obtained. When a plurality of light emitting elements 1 are provided, it can be a linear light emitting device in which the plurality of light emitting elements 1 are arranged side by side in a row. Alternatively, it can be a planar light emitting device in which a plurality of light emitting elements are arranged in a matrix.

According to the method for manufacturing a light emitting device according to the first embodiment, heating is performed at a first temperature lower than the second temperature, which is the curing temperature at which the resin layer is cured, to reduce the viscosity of the resin layer by the weight of the light emitting element. The light emitting element is submerged so that the second surface 12 of the semiconductor laminate is exposed. Thereby, for example, it is possible to manufacture a light emitting device in which the surface of the laminated structure of the light emitting element except for one surface is covered with a resin layer only by changing the temperature without using special equipment such as weighting. Therefore, it can be manufactured at low cost.
Further, the method for manufacturing the light emitting device of the first embodiment can be variously modified as follows, and various light emitting devices can be manufactured.

Modification 1
The method for manufacturing a light emitting device according to the first modification is a method for manufacturing a light emitting device including a light emitting element 1 and a resin member 30 including a phosphor that converts the wavelength of light from the light emitting element 1.
Specifically, in the method for manufacturing a light emitting device according to the first modification of the first embodiment, a resin containing phosphor particles is used as the resin layer 31. By submerging the light emitting element 1 in the resin layer 31 containing the particles of the phosphor and curing it, it is possible to manufacture a light emitting device in which the surface of the semiconductor laminate excluding the second surface 12 is covered with a wavelength conversion member. ..

The resin layer 31 containing particles such as a phosphor has a specific gravity and / or viscosity that changes depending on the particle size, particle size distribution, content, and the like of the particles of the phosphor contained in the resin. Therefore, the A stage state may be set appropriately in consideration of these.

Examples of the phosphor include an ittium-aluminum-garnet-based phosphor (for example, Y3 ₍ Al, Ga) ₅ O ₁₂ : Ce) and a lutetium-aluminum-garnet-based phosphor (for example, Lu ₃ (Al, Ga) ₅ O). ₁₂ : Ce), terbium-aluminum-garnet-based fluorescent material (for example, Tb ₃ (Al, Ga) ₅ O ₁₂ : Ce), CCA-based fluorescent material (for example, Ca ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu), SAE-based fluorescent materials (for example, Sr ₄ Al ₁₄ O ₂₅ : Eu), chlorosilicate-based fluorescent materials (for example, Ca ₈ MgSi ₄ O ₁₆ Cl ₂ : Eu), β-sialon-based fluorescent materials (for example, (Si, Al)). ₃ (O, N) ₄ : Eu), α-sialon-based phosphor (for example, Mz (Si, Al) ₁₂ (O, N) ₁₆ : Eu (where 0 <z ≦ 2 and M is Li, Mg) , Ca, Y, and lanthanide elements excluding La and Ce)), SLA-based phosphors (eg, _SrLiAl3N4 : Eu), CASN-based phosphors (eg, _CaAlSiN3 : Eu) or SCASSN-based fluorophore (eg, CaAlSiN ₃ : Eu). , (Sr, Ca) AlSiN ₃ : Eu) and other nitride-based fluorescent materials, KSF-based fluorescent materials (for example, K ₂ (Si, Al) F ₆ : Mn), KSAF-based fluorescent materials (for example, K ₂ Si ₀ ). Fluorescent phosphors such as _.99 Al _0.01 F _5.9 9: Mn) or MGF-based phosphors (for example, 3.5 MgO, 0.5 MgF ₂ , GeO ₂ : Mn), and phosphors having a perovskite structure (eg, Mn). For example, CsPb (F, Cl, Br, I) ₃ ) or a quantum dot phosphor (for example, CdSe, InP, AgInS ₂ or AgInSe ₂ ) can be used. As the fluorescent substance added to the resin member 30, one kind of fluorescent substance may be used, or a plurality of kinds of fluorescent substances may be used.

Further, the KSAF-based phosphor may have a composition represented by the following formula (I).
M ₂ [Si _p Al _q Mn _r F _s ] (I)

In formula (I), M represents an alkali metal and may contain at least K. Mn may be a tetravalent Mn ion. p, q, r and s may satisfy 0.9 ≦ p + q + r ≦ 1.1, 0 <q ≦ 0.1, 0 <r ≦ 0.2, 5.9 ≦ s ≦ 6.1. Preferably, 0.95 ≦ p + q + r ≦ 1.05 or 0.97 ≦ p + q + r ≦ 1.03, 0 <q ≦ 0.03, 0.002 ≦ q ≦ 0.02 or 0.003 ≦ q ≦ 0.015. , 0.005 ≤ r ≤ 0.15, 0.01 ≤ r ≤ 0.12 or 0.015 ≤ r ≤ 0.1, 5.92 ≤ s ≤ 6.05 or 5.95 ≤ s ≤ 6.025 May be. For example, K ₂ [Si _0.946 Al _0.005 Mn _0.049 F _5.995 ], K ₂ [Si _0.942 Al _0.008 Mn _0.050 F _5.992 ], K ₂ [Si _{0. 939} Al _0.014 Mn _0.047 F _5.986 ]. According to such a KSAF-based phosphor, it is possible to obtain red emission having high luminance and a narrow half-value width of the emission peak wavelength.

Modification 2
The method for manufacturing a light emitting device according to the second modification is a method for manufacturing a light emitting device including a light emitting element 1 and a resin member 30 containing a light diffusing agent that reflects light from the light emitting element 1.
Specifically, in the method for manufacturing a light emitting device according to the second modification of the first embodiment, a resin containing particles of a light diffusing agent such as titanium oxide, silicon oxide, aluminum oxide, and zinc oxide is used as the resin layer 31. .. By submerging the light emitting element 1 in the resin layer 31 containing the particles of the light diffusing agent and curing it, for example, a light emitting device having a light reflecting layer provided on the surface excluding the second surface 12 can be manufactured.

The light emitting device manufactured by the manufacturing method of the above modification 2 can be applied to, for example, manufacturing a light emitting device that emits light from the second surface 12 side on which the electrodes are arranged.

Further, in the manufacturing method of the second modification, the resin member 30 arranged on the first surface 11 of the light emitting element 1 is removed, or the light emitting element is in contact with the support 35 so that the first surface 11 of the light emitting element 1 is in contact with the support 35. By submerging 1 in the resin layer 31 and curing it, it is possible to manufacture a light emitting device in which the resin member 30 is not arranged on the first surface 11 of the light emitting element 1. The light emitting device manufactured in this way can reflect the light emitted from the side surface of the light emitting element 1 and emit the light from the first surface 11 of the light emitting element 1.
The resin layer 31 containing particles such as a light diffusing agent has a specific gravity and / or viscosity that changes depending on the particle size, particle size distribution, content, and the like of the particles of the light diffusing agent contained in the resin. Therefore, the A stage state may be set appropriately in consideration of these.

Modification 3
The method for manufacturing the light emitting device of the third modification is the light emitting element 1, the light reflecting layer provided above the first surface 11 of the light emitting element 1 (hereinafter referred to as the first reflecting layer), and the side surface 13 of the light emitting element 1. It is a method of manufacturing a light emitting device including a translucent resin member 30 provided so as to cover the above.

Specifically, in the method for manufacturing a light emitting device according to the first embodiment, as shown in FIG. 1F, a cured first light reflecting layer 25 is arranged on the upper surface of the support 35, and the first light reflecting layer 25 is arranged. The resin layer 31 is placed on top of the resin layer 31. The first light reflecting layer 25 can be formed or purchased in a pre-cured state, prepared, and placed on the support. Alternatively, the first light reflecting layer 25 can be prepared by arranging a liquid light reflecting member on the support and then curing it by heating or the like.

Next, as shown in FIG. 1G, the light emitting element 1 is submerged in the resin layer 31 and cured, and the first light reflecting layer 25 is individualized while remaining above the first surface 11 of the light emitting element 1. ..
This makes it possible to manufacture a so-called butt wing light distribution device that suppresses the light emitted above the first surface 11 of the light emitting element 1 and efficiently emits light from the side surface 13 of the light emitting element 1.
In the manufacturing method of the third modification, the resin member 30 having a wavelength conversion function by containing a phosphor in the resin layer 31 may be used.

Further, in the method of manufacturing the light emitting device of the modification 3, the position where the light emitting element 1 is submerged in the resin layer 31 is adjusted by changing the thickness of the resin layer 31 or adjusting the viscosity of the resin layer 31. Thereby, it is possible to change the distance between the light reflecting layer 25 and the first surface 11 of the light emitting element 1.
This makes it possible to manufacture light emitting devices having different butt wing light distribution characteristics.

Modification 4
In the manufacturing method of the modified example 4, after the resin member 30 is formed in the manufacturing method of the light emitting device according to the first embodiment or the modified examples 1 to 3, as shown in FIG. 1H, the second surface 12 and the electrode 20 are further formed. It is provided with a step of arranging a light reflecting layer 24 (hereinafter, referred to as a second light reflecting layer) covering the side surface of the above. In the step of arranging the second light reflecting layer 24, for example, roll coating, spraying, compression molding, or the like is used, and as shown in FIG. 1H, the second light reflecting layer 24 is attached to the upper surface of the resin member 30 and the first light emitting element 1. It is arranged on two sides 12. At this time, the second light reflecting layer 24 is arranged so as to cover the side surface of the electrode 20 and expose the upper surface of the electrode 20. Alternatively, the second light reflecting layer 24 is arranged so as to cover the side surface and the upper surface of the electrode 20, and then ground from the upper surface of the second light reflecting layer 24 to partially cover the electrode 20 and the second light reflecting layer 24. The surface of the electrode 20 may be exposed from the second light reflecting layer 24 by removing a part of the light reflecting layer 24. The surface of the electrode 20 exposed from the second light reflecting layer 24 is newly the upper surface of the electrode 20.

The light emitting device manufactured by the manufacturing method of the above modification 4 reflects the light traveling to the second surface 12 side by including the second light reflecting layer 24 covering the second surface 12 and the side surface of the electrode 20. It can be emitted from the first surface 11, and the emitted light can be efficiently emitted.

Modification 5
The manufacturing method of the modified example 5 further includes a step of arranging the second light reflecting layer covering the second surface 12 of the modified example 4 and the side surface of the electrode 20 in the manufacturing method of the modified example 3.

As shown in FIG. 1I, the light emitting device 100A manufactured by the manufacturing method of the above modification 5 has a first light reflecting layer 25 provided above the light emitting element 1 and a light emitting surface and side surfaces of the light emitting element 1. It includes a translucent resin member 30 provided so as to cover the surface, and a second light reflecting layer 24 that covers the surface on which the electrode of the light emitting element is formed and the side surfaces of the electrodes 21 and 22.

Further, in the light emitting device 100A, the light reflecting layers 24 and 25 can be formed of, for example, a resin containing titanium oxide, silicon oxide, aluminum oxide, zinc oxide or the like as a light diffusing agent. As the material of such a resin, for example, a silicone resin, an epoxy resin, an acrylic resin or the like can be used. Further, the light reflecting layers 24 and 25 may be, for example, a metal layer such as platinum, silver, rhodium, or aluminum, or a distributed Bragg Reflector (DBR). Further, the light reflecting layers 24 and 25 may be inorganic members.
Further, the distance d1 from the side surface of the light emitting element 1 to the outer surface of the resin layer 30 is preferably longer than the distance d2 from the upper surface of the light emitting element 1 to the upper surface of the resin layer 30. As a result, the light emitted from the side surface of the light emitting element 1 is more likely to propagate to the side surface side than the upper surface side of the resin layer 30, and the ratio of the light extracted from the side surface of the light emitting device 100A can be increased. The distance d1 from the side surface of the light emitting element 1 to the side surface of the resin layer 30 is about 1.5 or more and 2.5 times or less the distance d2 from the upper surface of the light emitting element 1 to the upper surface of the resin layer 22. Is preferable, and more preferably, the distance d1 is about twice the distance d2.

Further, the light emitting device 100A can obtain white light by arranging a sheet-shaped wavelength conversion member (hereinafter referred to as a wavelength conversion sheet) containing the above-mentioned phosphor above the light emitting device 100A. For example, white light can be obtained by combining a light emitting device capable of emitting blue light and a wavelength conversion sheet containing a phosphor capable of emitting yellow light. In addition, it contains a light emitting device capable of emitting blue light, a fluorescent substance capable of emitting red light (hereinafter referred to as red phosphor), and a fluorescent substance capable of emitting green light (hereinafter referred to as green phosphor). It may be combined with a wavelength conversion sheet to be used. Further, a light emitting device capable of emitting blue light may be combined with a plurality of wavelength conversion sheets. As the plurality of wavelength conversion sheets, for example, a wavelength conversion sheet containing a red phosphor and a wavelength conversion sheet containing a green phosphor can be selected. Further, a light emitting device having a light emitting element capable of emitting blue light, a translucent member containing a red phosphor, and a wavelength conversion sheet containing a green phosphor may be combined.

<Embodiment 2>
The method for manufacturing a light emitting device according to a second embodiment according to the present disclosure is a light emitting device 100 including a phosphor (hereinafter referred to as a first phosphor) in a resin member 30 manufactured by the manufacturing method according to the first modification of the first embodiment. This is a method for manufacturing a light emitting device 200 in which a resin layer 130 containing a second phosphor different from the first phosphor is further arranged on a resin member 30 of the light emitting device 100.

First, the light emitting device 100 including the first phosphor in the resin member 30 is prepared by the manufacturing method according to the first modification of the first embodiment.
In parallel with the preparation of the light emitting device 100, the resin in the uncured state containing the second phosphor is placed on the support 35 in the same manner as in the step of arranging the resin layer 31 of (a) of the first embodiment. The resin layer 131 in the state of the A stage shown in FIG. 2A is arranged. The viscosity of the resin layer 131 in the uncured state is adjusted so that the light emitting device 100 sinks due to its own weight so that the second surface 12 of the semiconductor laminate 10 is exposed based on the specific gravity of the resin layer 131 and the own weight of the light emitting device 100. Will be done. Further, as the resin contained in the resin layer 131, the same resin as in the first embodiment can be used. Preferably, the same resin as the resin constituting the resin layer 31 of the first embodiment is used.

Next, as shown in FIG. 2B, in the same manner as in the step of mounting the light emitting element 1 (b) of the first embodiment, the state of the A stage of the resin layer 131 arranged on the support 35 is maintained. The light emitting device 100 is placed so that the upper surface of the resin layer 131 and the light emitting surface of the light emitting device 100 face each other. In the target light emitting device 200, the light emitting device 100 is arranged, for example, in a matrix at predetermined intervals in consideration of the thickness of the resin member 130 covering the side surface of the light emitting device 100.

Next, as shown in FIG. 2C, the resin layer 131 is heated at the first temperature in the same manner as in the step of submerging the (c) light emitting element 1 of the first embodiment to reduce the viscosity of the resin layer 131. The light emitting device 100 is submerged so that the electrode forming surface of the light emitting device 100 is exposed by the weight of the light emitting device 100.
Hereinafter, in the same manner as in the step of curing the resin layer 31 (d) of the first embodiment to form the resin member 30, the resin layer 131 is heated and cured at a second temperature higher than the first temperature, and is shown in FIG. As shown in 2D, the resin member 130 that covers the side surface of each light emitting device 100 with a predetermined thickness is cut between adjacent light emitting devices 100 so as to be arranged. FIG. 2E shows a cross section of the light emitting device 200 after removing the supports, respectively.

According to the method of manufacturing the light emitting device of the second embodiment, the light emitting element 1, the resin member 30 covering the light emitting element 1 except for the second surface 12, and the second resin member 130 covering the resin member 30 are included. The light emitting device 200 can be manufactured without using special equipment related to weighting or the like, and can be manufactured at low cost.

In the light emitting devices of the above embodiments 1 and 2, in the step of (c) submerging the light emitting element 1 or the light emitting device 100, the surface of the resin layer 30 or 130 between the adjacent light emitting elements 1 or the light emitting device 100 is substantially. An example is shown in which the light emitting element 1 or the light emitting device 100 is submerged so as to be flat.
However, the method for manufacturing the light emitting device according to the present disclosure is not limited to this.
For example, as shown in FIG. 3A, the light emitting element 1 or the light emitting device 100 may be submerged so that the surface of the resin layer 30 or 130 between the adjacent light emitting elements 1 or the light emitting device 100 has a concave curved surface. ..
In order to submerge the resin layer 31 or 131 in such a state, the viscosity of the resin layer 31 or 131 in the A stage state, the first temperature for heating, and the wettability of the resin layer 31 or 131 with respect to the side surface of the light emitting element 1 or the light emitting device 100. Should be adjusted as appropriate.
Note that FIG. 3B shows a cross section of the light emitting device after the resin layer 30 is cured from the state of FIG. 3A, cut, and the support 35 is removed.
Further, the light emitting device shown in FIG. 3B covers the second surface of the light emitting element and the side surface of the electrode, and further covers the inclined surface of the resin layer 30 continuously from the second surface of the light emitting element (the first light reflecting layer shown in FIG. 1I). (Corresponding to the two light reflecting layer 24) may be provided. With the above configuration, when the resin layer 30 is made of a translucent resin, light can be reflected by the inclined surface of the resin layer 30 covered with the light reflecting layer and taken out to the outside. In order to manufacture such a light emitting device, a light reflecting layer covering the second surface of the light emitting element, the side surface of the electrode, and the recessed surface of the resin layer 30 is arranged and cured at the stage before individualization shown in FIG. 3A. After that, it may be individualized.

Further, as shown in FIG. 4A, the light emitting element 1 or the light emitting device 100 may be submerged so as to be covered with the resin layer 30 or 130 halfway through the side surface of the light emitting element 1 or the side surface of the light emitting device 100.
To submerge in such a state, the weight of the light emitting element 1 or the light emitting device 100, the viscosity of the resin layer 31 or 131, the first temperature to be heated, the resin layer 31 with respect to the side surface of the light emitting element 1 or the light emitting device 100. Alternatively, the wettability of 131 may be adjusted as appropriate.
Note that FIG. 4B shows a cross section of the light emitting device after the resin layer 30 is cured from the state of FIG. 4A, cut, and the support 35 is removed.

<Embodiment 3>
The method for manufacturing a light emitting device according to the third embodiment according to the present disclosure is different from the method for manufacturing a light emitting device according to the first embodiment in that it includes a step of preparing a resin layer 31 having a recess 33. In the third embodiment, the recess 33 includes a bottom surface 33a on which the light emitting element 1 is placed and a side surface 33b facing the side surface 13 of the light emitting element 1 placed at a predetermined interval, and the step of mounting the light emitting element. In, the light emitting element 1 is placed on the bottom surface 33a.
Except for the above points, the method for manufacturing the light emitting device of the third embodiment is configured in the same manner as the method for manufacturing the light emitting device of the first embodiment.
Hereinafter, the method for manufacturing the light emitting device according to the third embodiment will be described in detail, focusing on the differences from the method for manufacturing the light emitting device according to the first embodiment.

(A) Step of preparing the resin layer 31 having the recess 33 The step of preparing the resin layer 31 having the recess 33 may be prepared by purchasing the resin layer 31 having the recess 33, or the following step ( It may be prepared by providing the recess 33 in the resin layer 31 according to a1) and (a2).
(A1) Step of Arranging the Resin Layer 31 Here, by pasting the resin sheet in the A stage state prepared in advance on the support 35, the resin layer 31 in the A stage state as shown in FIG. 5A is arranged. do. For attaching the resin sheet, for example, a vacuum laminator can be used. Further, for example, the resin layer 31 in the A stage state may be arranged by applying the resin in the uncured state on the support 35. Here, the state of the A stage is the uncured state described in the first embodiment.

(A2) Step of Providing a Recession 33 on the Upper Surface of the Resin Layer 31 Here, after the resin layer 31 is arranged on the support 35 and before the light emitting element 1 is placed, the light emitting element 1 on the upper surface of the resin layer 31 is placed. A recess is provided at the position where the plastic is placed. For example, as shown in FIGS. 5B and 5C, the mold 50 is pushed to a predetermined depth from the upper surface of the resin layer 31 in the A stage state, and then the mold 50 is removed to remove the mold 50 to form the resin layer 31 as shown in FIG. 5D. A recess 33 is provided in the space. The recess 33 may be formed by a mold in which a plurality of molds 50 are integrated, or a predetermined position (a light emitting element is placed) while sequentially moving the mold 50 adsorbed on the tip of the collet of the die bonding device. It may be formed by pushing it to a predetermined depth at the position where it is to be formed.

The shape of the recess 33 is the light emitting element when the resin layer 31 is set to the first temperature with respect to the type of the resin material forming the resin layer 31, the viscosity in the A stage state, and the shape and weight of the light emitting element. 1 is set to be in the desired settling state. That is, the settling state of the light emitting element 1 when the light emitting element 1 is placed on the bottom surface of the recess 33 of the resin layer 31 at the first temperature is the type of the resin material forming the resin layer 31 and the A stage state. In addition to the viscosity of the light emitting element 1 and the shape and weight of the light emitting element 1, the shape of the recess 33 and the distance between adjacent recesses 33 vary. Further, in the settling state of the light emitting element 1, even if the resin material forming the resin layer, the viscosity of the resin material in the A stage state, and the first temperature are the same, the shape of the recess 33 and the space between the adjacent recesses 33 are the same. It may depend on the interval etc. The settling state of the light emitting element 1 is, for example, a state in which the upper surface of the resin layer between the light emitting elements placed adjacent to each other is substantially on the same plane as the electrode forming surface of the light emitting element (hereinafter, state 1). ). Further, as the settling state of the light emitting element 1, for example, the upper surface of the resin layer between the light emitting elements may be located below the plane including the electrode forming surface of the light emitting element (hereinafter referred to as state 2). .. Furthermore, as the settling state of the light emitting element 1, for example, the upper surface of the resin layer between the light emitting elements may be located above the plane including the electrode forming surface of the light emitting element (hereinafter referred to as state 3). do.
The specific setting method of this recess will be described later because it is related to the first temperature and the like.

(B) Step of placing the light emitting element 1 Here, as shown in FIG. 5E, the light emitting element 1 is placed on the bottom surface 33a of the recess 33 while maintaining the state of the A stage of the resin layer 31. It is preferable that the light emitting element 1 is placed so that its central axis (central axis perpendicular to the bottom surface) coincides with the central axis of the recess 33 (central axis perpendicular to the bottom surface 33a). Here, if the deviation between the central axes is within the variation range when the light emitting element 1 is placed, it is assumed that they match.

Further, the method of mounting the light emitting elements 1 on the bottom surface 33a of the recess 33 is not particularly limited, and the light emitting elements 1 may be placed one by one in order, or a plurality of light emitting elements 1 may be placed together. It may be placed. For example, when a plurality of light emitting elements 1 are placed together, a photosensitive adhesive is applied to a support (hereinafter referred to as a second support) different from the support on which the resin layer 31 is arranged. Prepare a plurality of light emitting elements arranged via the plurality of light emitting elements. Next, the light emitting element 1 can be collectively transferred to the bottom surface 33a of the recess 33 by irradiating the adhesive with a laser from the second support side and peeling the plurality of light emitting elements from the second support. can.

(C) Step of submerging the light emitting element 1 Here, the resin layer 31 is heated at the first temperature to reduce the viscosity of the resin layer 31, and as shown in FIG. 5F, the resin on the side wall surrounding the softened recess 33. Covers the side surface of the semiconductor laminate 10 and sinks the light emitting element 1 so that the second surface 12 of the semiconductor laminate 10 is exposed from the upper surface of the resin layer 31.

(D) Step of Curing the Resin Layer 31 to Form the Resin Member 30 Here, the resin layer 31 is heated at a second temperature higher than the first temperature and cured in a state where the second surface 12 is exposed. .. As a result, the resin member 30 is formed.

Hereinafter, in the same manner as in the first embodiment, the resin member is cut between the adjacent light emitting elements 1 to separate the light emitting device from the support.

Setting the shape of the first temperature and the recess 33 The shape of the first temperature and the recess 33 takes into consideration the type of resin material forming the resin layer 31, the viscosity in the A stage state, and the shape and weight of the light emitting element. It is set so as to be in the desired state of the state 1 to the state 3. For example, the shape of the recess 33 is optimized so as to be in the desired state of the states 1 to 3 in consideration of the type of the resin material forming the resin layer 31 and the shape and weight of the light emitting element. It can be set by referring to a database that stores the viscosity of the resin material in the A stage state, the first temperature, the shape of the recesses 33, and the spacing between the adjacent recesses 33. In this database, for example, the viscosity in the A stage state, the first temperature, the shape of the recess 33, and the adjacent state are optimized so as to be in the states 1 to 3 for each resin material for the light emitting element to be used. Parameters such as the distance between the recesses 33 to be formed are stored. Each parameter can be obtained by experiment or the like. It is preferable that the database stores, for example, parameters optimized for a combination of a plurality of resin materials to be used and a plurality of light emitting elements to be used. Various combinations of the resin material and the light emitting element can be selected, and the states 1 to 3 can be selected according to the purpose.

Further, in the method of manufacturing the light emitting device of the third embodiment, the position accuracy when the light emitting element 1 is placed on the bottom surface of the recess 33 depends on the shape of the recess 33, and the light emitting element 1 is submerged in the resin layer 31. It was confirmed that it could be maintained even after it was cured.

The maintenance of this position accuracy mainly depends on the width W1 and height H1 of the light emitting element 1, the depth D33 and width W33 of the recess 33, and the width W50 of the wall portion between the adjacent recesses 33, as shown in FIG. In other words, in order to maintain this position accuracy, the depth D33 and the width W33 of the recess 33 and the width W50 of the wall portion between the adjacent recesses 33 are the width W1 and the height H1 of the light emitting element 1 and the depth of the recess 33. The depth D33 and the width W33 are appropriately set in consideration of the width W33, but in order to effectively obtain the effect of maintaining the position accuracy, the depth D33 of the recess 33 is preferably larger than the height H1 of the light emitting element 1. The recess 33 is formed, for example, to a depth of 100 μm to 200 μm, and is preferably deeper than the thickness of the light emitting element in order to maintain the position accuracy when the light emitting element is arranged. For example, when a light emitting element having a thickness of 150 μm is arranged, the recess 33 is formed deeper than 150 μm. Here, the thickness of the light emitting element means the thickness of the portion excluding the thickness of the electrode.

As described above, in the method for manufacturing the light emitting device of the third embodiment, by adjusting the shape of the recess 33 and the distance between the recesses, the position accuracy of the light emitting element when placed is improved after the resin layer is cured. Can also be maintained.
Therefore, the first temperature and the shape of the recess are set to the desired states of states 1 to 3 in consideration of the shape and weight of the resin forming the resin layer 31 and the light emitting element, and the effect of suppressing misalignment is obtained. It is preferable to set it so that
That is, the shape of the recess 33 is set in consideration of the shape and weight of the resin forming the resin layer 31 and the light emitting element so that the desired states of the states 1 to 3 can be obtained and the position shift suppressing effect can be obtained. It is preferable to refer to and set a database that stores the A stage state of the resin, the first temperature, the shape of the recess 33, and the distance between the adjacent recesses 33, which are optimized for each. Needless to say, it is preferable that the database stores parameters optimized for, for example, a combination of a plurality of resins to be used and a plurality of light emitting elements to be used.

According to the method for manufacturing the light emitting device of the third embodiment configured as described above, the position accuracy of the light emitting element can be improved, and the light emitting device having a desired configuration can be easily manufactured.

<Embodiment 4>
The manufacturing method of the fourth embodiment according to the present disclosure is a manufacturing method of a light emitting module in which a plurality of light sources are arranged in a matrix on a light guide plate, for example. Hereinafter, a specific description will be given with reference to FIGS. 7A to 7C. In the following description, an example will be described in which a plurality of light emitting devices 100 manufactured by the manufacturing method of the first embodiment are used as a light source. However, the manufacturing method of the fourth embodiment is not limited to this, and for example, the light emitting element 1 shown in the first embodiment may be used as a light source, or the light emitting light manufactured by the manufacturing methods of the second to third embodiments may be used. The device can also be used as a light source.

In the manufacturing method of the fourth embodiment, first, the light guide plate 310 is prepared. The light guide plate 310 is a member that spreads the light emitted from the light emitting device as a light source in a plane shape, and includes a second main surface 312 as a light extraction surface and a first main surface 311 located on the opposite side thereof. It is a substantially plate-shaped member. The first main surface 311 is provided with a first recess 313. The first recess 313 is a portion where the light emitting device 100 is arranged. The second main surface 312 of the light guide plate 310 may have the second concave portion 315 arranged at a position corresponding to the concave portion 313 of the first main surface 311. The light guide plate 310 shown in FIG. 5A shows an example including two first recesses 313. The first recesses 313 can be arranged in a matrix, for example, on the first main surface 311.

Such a light guide plate 310 can be prepared, for example, by molding by injection molding, transfer molding, thermal transfer, or the like. As the material of the light guide plate 310, for example, a thermoplastic resin such as acrylic, polycarbonate, cyclic polyolefin, polyethylene terephthalate or polyester, a thermosetting resin such as epoxy or silicone, glass or the like can be used. Further, the first recess 313 and the second recess 315 of the light guide plate 310 can be collectively formed at the time of molding the light guide plate 310. This makes it possible to reduce the misalignment during molding. Further, the light guide plate 310 is prepared by purchasing or molding a translucent plate having no first recess 313 or second recess 315, and performing a step of forming the first recess 313 or the second recess 315. You may. Alternatively, the light guide plate 10 provided with the first recess 313 and the second recess 315 may be prepared by purchasing.

The second recess 315 can be a cone-shaped depression, a pyramidal-shaped depression, or a frustum-shaped depression. The second recess 315 can reflect the light from the light emitting device 100 laterally. A light-reflecting member may be arranged in the second recess 315. As the light-reflecting member, for example, a resin material containing a light diffusing agent such as titanium oxide, an insulating inorganic material such as an oxide or a nitride, or a thin film of a conductive material such as metal can be used.

Next, as shown in FIG. 7A, the uncured resin is injected into the first recess 313 of the prepared light guide plate 310, and the resin filling portion 331 filled with the resin in the A stage state is arranged.
Next, as shown in FIG. 7B, the light emitting device 100 is placed on the resin filling portion 331 so that the light emitting surface of the light emitting element faces the resin filling portion 331 while maintaining the A stage state of the injected resin. do. Here, in the present specification, the fact that the light emitting surface of the light emitting element faces the resin filling portion 331 also includes the case where the light emitting surface faces the resin filling portion 331 via the resin member as shown in FIG. 7B.
Next, as shown in FIG. 7C, the resin filling portion 331 is heated at the first temperature to reduce the viscosity of the resin in the resin filling portion 331, and the weight of the light emitting device 100 causes the electrode forming surface of the light emitting device 100 to be formed. The light emitting device 100 is submerged so as to be exposed, the resin filling portion 331 is heated at a second temperature higher than the first temperature, and the second surface 12 is cured in an exposed state. As a result, the resin member 330 that covers the surface of the light emitting device 100 excluding the electrode forming surface is arranged in the first recess 313.

According to the above-mentioned manufacturing method of the fourth embodiment, it is possible to inexpensively manufacture a light emitting module provided with a plurality of light emitting devices 100 on the light guide plate 310.

In the above method of manufacturing the light emitting module of the fourth embodiment, the first recess 313 is provided in the light guide plate 310. However, instead of the first recess 313, the light emitting module penetrates from the upper surface to the lower surface of the light guide plate 310. Holes may be used. In this case, for example, after closing the through hole on the lower surface side and arranging the resin filling portion, it can be manufactured in the same manner as in the case of the first recess 313.

1 Light emitting element 10 Semiconductor laminate 11 1st surface 12 2nd surface 13 Side surface 20 Electrode 21 1st electrode 22 2nd electrode 24 Light reflecting layer (2nd light reflecting layer)
25 Light-reflecting layer (first light-reflecting layer)
30, 130 Resin member 31, 131 Resin layer 35 Support 100, 200 Light emitting device 310 Light guide plate 311 Top surface 312 Bottom surface 313 First recess 315 Second recess 330 Resin member 331 Resin filling part

Claims (9)

A semiconductor laminate including a first surface, a second surface on the opposite side of the first surface, and a side surface between the first surface and the second surface, and the second surface of the semiconductor laminate. A method for manufacturing a light emitting device having a light emitting element including an electrode to be arranged and having a side surface of the semiconductor laminate covered with a resin member.
The process of arranging the resin layer in the A stage state on the support, and
A step of placing the light emitting element on the upper surface of the resin layer with the upper surface of the resin layer and the first surface facing each other.
A step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer and sinking the light emitting element so that the second surface of the semiconductor laminate is exposed by the weight of the light emitting element. When,
A step of forming the resin member by heating the resin layer at a second temperature higher than the first temperature and curing the resin layer in an exposed state.
A method for manufacturing a light emitting device including. After forming the resin layer and before mounting the light emitting device,
A step of providing a recess including a bottom surface on which the light emitting element is placed and a side surface facing the light emitting element at a predetermined distance is provided at a position on the upper surface of the resin layer on which the light emitting element is placed.
The method for manufacturing a light emitting device according to claim 1, wherein the light emitting element is placed on the bottom surface in the step of mounting the light emitting element. Prior to the step of arranging the resin layer, an A stage provided with a recess including a bottom surface and a side surface facing the side surface of the light emitting element at a predetermined distance at a position where a light emitting element is placed on the upper surface of the resin layer. Including the step of preparing the resin layer in the state of
In the step of arranging the resin layer, the resin layer in the state of the A stage provided with the recess is arranged on the support.
The method for manufacturing a light emitting device according to claim 1, wherein the light emitting element is placed on the bottom surface in the step of mounting the light emitting element. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the resin layer contains a fluorescent substance. The method for manufacturing a light emitting device according to any one of claims 1 to 4, wherein the thickness of the resin layer is larger than the thickness of the semiconductor laminate. Any one of claims 1 to 5, wherein the method for forming the resin layer includes a step of forming a cured first light reflecting layer on the support and forming the resin layer on the first light reflecting layer. The method for manufacturing a light emitting device according to a section. One of claims 1 to 6, further comprising a step of forming a second light reflecting layer that covers the second surface and the side surface of the electrode after the resin layer is cured to form the resin member. The method for manufacturing a light emitting device according to item 1. A semiconductor laminate including a first surface, a second surface opposite to the first surface, and a side surface between the first surface and the second surface, and the second surface of the semiconductor laminate. A step of preparing a light source having a light emitting element including an electrode to be arranged and having at least the second surface exposed to the outside.
A step of preparing a light guide plate having a first main surface and a second main surface opposite to the first main surface and having a recess on the first main surface.
In the step of arranging the resin layer in the state of A stage in the recess,
A step of placing the light source on the upper surface of the resin layer with the upper surface of the resin layer and the first surface of the light emitting element facing each other.
A step of heating the resin layer at a first temperature to reduce the viscosity of the resin layer and submerging the light source so that the second surface of the semiconductor laminate is exposed by the weight of the light source.
A step of forming the resin member by heating the resin layer at a second temperature higher than the first temperature and curing the resin layer in an exposed state.
A method of manufacturing a light emitting module including. The method for manufacturing a light emitting module according to claim 8, wherein the light source includes a light emitting device manufactured by the method for manufacturing a light emitting device according to any one of claims 1 to 7.

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