JP2022076459A - 高い安定性を有する半導体ナノ材料 - Google Patents
高い安定性を有する半導体ナノ材料 Download PDFInfo
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- JP2022076459A JP2022076459A JP2021175325A JP2021175325A JP2022076459A JP 2022076459 A JP2022076459 A JP 2022076459A JP 2021175325 A JP2021175325 A JP 2021175325A JP 2021175325 A JP2021175325 A JP 2021175325A JP 2022076459 A JP2022076459 A JP 2022076459A
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- Prior art keywords
- shell
- core
- quantum dot
- quantum
- quantum dots
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- 239000004065 semiconductor Substances 0.000 title abstract description 9
- 239000002086 nanomaterial Substances 0.000 title abstract description 6
- 239000002096 quantum dot Substances 0.000 claims abstract description 95
- 238000006862 quantum yield reaction Methods 0.000 claims abstract description 31
- 239000002245 particle Substances 0.000 claims abstract description 25
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 238000005424 photoluminescence Methods 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 11
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 16
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 16
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011669 selenium Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 239000011593 sulfur Substances 0.000 description 7
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000007774 longterm Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004246 zinc acetate Substances 0.000 description 3
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000001568 sexual effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- OUMZKMRZMVDEOF-UHFFFAOYSA-N tris(trimethylsilyl)phosphane Chemical compound C[Si](C)(C)P([Si](C)(C)C)[Si](C)(C)C OUMZKMRZMVDEOF-UHFFFAOYSA-N 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
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- Luminescent Compositions (AREA)
- Optical Filters (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Abstract
Description
100s:粒径
102:コア
104:傾斜合金中間層
106:第1のシェル
108:第2のシェル
Claims (8)
- InPで構成されたコアと、
ZnSeで構成され、前記コアの表面を包む第1のシェルと、
前記第1のシェルの表面を包み、前記第1のシェルとは異なる材料を有する第2のシェルと、
前記コアと前記第1のシェルとの間に形成され、In、P、Zn、及びSeで構成された合金を含む傾斜合金中間層であって、前記In及びPの含有量が前記コアから前記第1のシェルへの方向に沿って徐々に減少し、前記Zn及びSeの含有量が前記コアから前記第1のシェルへの前記方向に沿って徐々に増加する、傾斜合金中間層と、を含み、
前記量子ドットの粒径が11nm以上であり、前記量子ドットが、励起時に、50%以上のフォトルミネッセンス量子収率で発光することができる、
量子ドット。 - 前記第2のシェルがZnSで構成されている、請求項1に記載の量子ドット。
- 前記量子ドットの前記粒径が11nm~15nmの範囲にある、請求項1又は2に記載の量子ドット。
- 前記量子ドットの前記粒径が15nm以上である、請求項1から請求項3のいずれか1項に記載の量子ドット。
- 前記量子ドットが、励起時に、60%~90%の範囲のフォトルミネッセンス量子収率で発光することができる、請求項1から請求項4のいずれか1項に記載の量子ドット。
- 前記量子ドットが、励起時に、90%以上のフォトルミネッセンス量子収率で発光することができる、請求項1から請求項5のいずれか1項に記載の量子ドット。
- 高温で保管する前と後で前記量子ドットの前記フォトルミネッセンス量子収率が5%以下減少する、請求項1から請求項6のいずれか1項に記載の量子ドット。
- 前記量子ドットの前記コアが、光源の一定の波長域の光を吸収し、少なくとも1つの異なる波長域の光を放出することができる、請求項1から請求項7のいずれか1項に記載の量子ドット。
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TW109138972 | 2020-11-09 | ||
TW109138972A TWI811582B (zh) | 2020-11-09 | 2020-11-09 | 高穩定性半導體奈米材料 |
Publications (2)
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JP2022076459A true JP2022076459A (ja) | 2022-05-19 |
JP7281522B2 JP7281522B2 (ja) | 2023-05-25 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006186317A (ja) * | 2004-11-11 | 2006-07-13 | Samsung Electronics Co Ltd | 多層構造のナノ結晶およびその製造方法 |
JP2017512245A (ja) * | 2014-01-06 | 2017-05-18 | ナノコ テクノロジーズ リミテッド | カドミウムフリー量子ドットナノ粒子 |
JP2018199807A (ja) * | 2017-05-26 | 2018-12-20 | 優美特創新材料股▲ふん▼有限公司 | 特大量子ドットおよびその形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016517453A (ja) * | 2013-03-14 | 2016-06-16 | ナノコ テクノロジーズ リミテッド | ホスフィンを用いて作られた量子ドット |
KR102470362B1 (ko) * | 2016-12-28 | 2022-11-25 | 디아이씨 가부시끼가이샤 | 분산체 및 그것을 사용한 잉크젯용 잉크 조성물, 광변환층, 및 액정 표시 소자 |
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2020
- 2020-11-09 TW TW109138972A patent/TWI811582B/zh active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006186317A (ja) * | 2004-11-11 | 2006-07-13 | Samsung Electronics Co Ltd | 多層構造のナノ結晶およびその製造方法 |
JP2017512245A (ja) * | 2014-01-06 | 2017-05-18 | ナノコ テクノロジーズ リミテッド | カドミウムフリー量子ドットナノ粒子 |
JP2018199807A (ja) * | 2017-05-26 | 2018-12-20 | 優美特創新材料股▲ふん▼有限公司 | 特大量子ドットおよびその形成方法 |
Non-Patent Citations (1)
Title |
---|
FAN CAO ET AL.: "A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-E", CHEMISTRY OF MATERIALS, vol. 30, JPN6022038424, 2018, pages 8002 - 8007, ISSN: 0004975300 * |
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TWI811582B (zh) | 2023-08-11 |
TW202219246A (zh) | 2022-05-16 |
JP7281522B2 (ja) | 2023-05-25 |
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