JP2022075462A - イメージセンサおよびその形成方法 - Google Patents
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
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- 150000004706 metal oxides Chemical class 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H01L27/144—Devices controlled by radiation
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- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L27/144—Devices controlled by radiation
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- H01L27/14625—Optical elements or arrangements associated with the device
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- H01L27/144—Devices controlled by radiation
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Abstract
Description
100A、100B オートフォーカスセンサユニットのグループ
100A-L 左オートフォーカスセンサユニット
100A-R 右オートフォーカスセンサユニット
100B-L 左オートフォーカスセンサユニット
100B-R 右オートフォーカスセンサユニット
102 基板
104 ディープトレンチアイソレーション構造
106 感知部
110 カラーフィルタ層
112 パーティショングリッド構造
114 遮光構造
120 マイクロレンズ材料層
122 マイクロレンズ
124 トップフィルム
130 ハードマスク層
132 ハードマスクパターン
140 フォトマスク
140a 透明部
140b 非透明部
A 第1のギャップ
B 第2のギャップ
D1 第1の深さ
D1’ 第1の深さ
D2 第2の深さ
R1 第1の曲率半径
R1’第1の曲率半径
R2 第2の曲率半径
Claims (10)
- 複数の感知部を含む基板を提供するステップ、
前記基板上にカラーフィルタ層を形成するステップ、
前記カラーフィルタ層上にマイクロレンズ材料層を形成するステップ、
前記マイクロレンズ材料層上に、第1のギャップと前記第1のギャップよりも大きい第2のギャップを有するハードマスクパターンを形成するステップ、
前記ハードマスクパターンを複数のドーム形状にリフローするステップ、
前記複数のドーム形状を前記マイクロレンズ材料層に転写して複数のマイクロレンズを形成するステップ、および
前記複数のマイクロレンズ上にトップフィルムをコンフォーマルに形成するステップを含む画像センサの形成方法。 - 前記基板は、複数の感知部を分離する複数のディープトレンチアイソレーション(DTI)構造をさらに含み、前記複数のディープトレンチアイソレーション構造の形成は、オートフォーカスセンサユニットのサイズを規定する請求項1に記載の方法。
- 2つ以上の前記オートフォーカスセンサユニットは、前記基板上に前記カラーフィルタ層を形成する前に、オートフォーカスセンサユニットのグループを構成し、前記カラーフィルタ層内にパーティショングリッド構造を形成するステップをさらに含み、前記パーティショングリッド構造は、 前記オートフォーカスセンサユニットのグループを囲む請求項2に記載の方法。
- 前記パーティショングリッド構造を形成する前に、前記パーティショングリッド構造内に埋め込まれた遮光構造を形成するステップをさらに含み、前記ハードマスクパターンを形成するステップは、前記パーティショングリッド構造内に第1のギャップを形成するステップを含み、ハードマスクパターンを形成するステップは、前記パーティショングリッド構造の真上に第2のギャップを形成するステップを含む請求項3に記載の方法。
- 前記第1のギャップは、前記オートフォーカスセンサユニットのサイズの約10%から約20%の範囲にあり、前記第2のギャップは、前記オートフォーカスセンサユニットのサイズの約30%から約40%の範囲にある請求項2に記載の方法。
- 複数のマイクロレンズの形成は、マイクロレンズ材料層の上部にのみ形成され、前記トップフィルムの屈折率は、前記マイクロレンズの屈折率よりも低い請求項1に記載の方法。
- 複数のオートフォーカスセンサユニットのグループ、
前記複数のオートフォーカスセンサユニットのグループのそれぞれは、複数の感知部、前記複数の感知部に配置されたカラーフィルタ層、および前記カラーフィルタ層上に配置され、且つ前記複数の感知部の上に対応した複数のマイクロレンズを含み、
前記複数のマイクロレンズ上にコンフォーマルに配置されたトップフィルム、
前記複数のオートフォーカスセンサユニットのグループのうちの1つの中にある前記マイクロレンズの間にあり、且つ第1の深さを有するジョイントシーム、および
前記複数のオートフォーカスセンサユニットのグループの前記マイクロレンズの間にあり、且つ第2の深さを有し、前記第2の深さが前記第1の深さよりも大きいギャップを含むイメージセンサ。 - 前記複数の感知部は、基板内に埋め込まれ、前記基板は、前記複数の感知部を分離する複数のディープトレンチアイソレーション構造をさらに含む請求項7に記載のイメージセンサ。
- 前記カラーフィルタ層内のパーティショングリッド構造、および前記パーティショングリッド構造内に埋め込まれた遮光構造をさらに含み、前記パーティショングリッド構造は、前記複数のオートフォーカスセンサユニットのグループのそれぞれを分離する請求項7に記載のイメージセンサ。
- 前記ジョイントシーム内の前記マイクロレンズの部分は、第1の曲率半径R1を有し、前記ギャップ内の前記マイクロレンズの異なる部分は、第2の曲率半径R2を有し、前記第1の曲率半径は、前記第2の曲率半径R2よりも大きく、前記複数のオートフォーカスセンサユニットのグループのそれぞれの中にある前記マイクロレンズは、互いに分離されているか、互いに隣接しているか、または互いに重なり合っており、前記トップフィルムの屈折率は、前記マイクロレンズの屈折率よりも低い請求項7に記載のイメージセンサ。
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US17/090,298 US11569291B2 (en) | 2020-11-05 | 2020-11-05 | Image sensor and method forming the same |
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KR102645517B1 (ko) | 2024-03-08 |
US20230102094A1 (en) | 2023-03-30 |
TWI742989B (zh) | 2021-10-11 |
KR102597412B1 (ko) | 2023-11-03 |
KR20230141684A (ko) | 2023-10-10 |
CN114447003A (zh) | 2022-05-06 |
TW202220197A (zh) | 2022-05-16 |
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US20220139996A1 (en) | 2022-05-05 |
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