JP2022039373A - Manufacturing method of light-emitting device - Google Patents

Abstract

To provide a manufacturing method of a light-emitting device, which has an excellent operability of an adhesive agent coating, and in which a deviation of an insulation member arranged on an adhesive agent hardly occurs.SOLUTION: A manufacturing method of a light-emitting device, contains: a preparation step S1 of preparing an insulation base having a first surface and an adhesive agent; a coating step S2 of coating the adhesive agent onto the first surface; an arrangement step S3 of arranging the insulation member to the adhesive agent coated; and an adhesive step S4 of adhering the base and the insulation member by hardening the adhesive agent. In the preparation step S1, the adhesive agent contains a first nano particle, and at least one of first nano particle is aggregated. A viscosity of the adhesive agent, measured by a rheometer at 25°C is 6.0 Pa*s or more and 30.0 Pa*s or less at a shear rate of 1 s-1, and is 2.5 Pas or more and 7.0 Pa*s or less at a shear rate of 100 s-1. The difference of the viscosity at the shear rate of 1 s-1 and the viscosity of the shear rate of 100 s-1 is 2.0 Pa*s or more.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to a method for manufacturing a light emitting device.

An LED chip arranged on the surface of the insulating substrate, a transparent phosphor plate containing a phosphor, a transparent adhesive member for adhering and fixing the upper surface of the LED chip and the lower surface of the phosphor plate, the LED chip, and the LED chip. A method for manufacturing a light emitting device including a reflective layer containing light-reflecting fine particles surrounding a phosphor plate is disclosed (see Patent Document 1).

JP-A-2015-079805A

An object of the present embodiment is to provide a method for manufacturing a light emitting device, which is excellent in workability of adhesive application and is less likely to cause displacement of the insulating member arranged in the adhesive.

The method for manufacturing a light emitting device according to an embodiment of the present disclosure includes a preparation step of preparing an insulating base having a first surface and an adhesive, and a coating step of applying the adhesive to the first surface. In the preparatory step, the adhesive comprises an arranging step of arranging an insulating member on the applied adhesive and an adhesive step of curing the adhesive to bond the base and the insulating member. Contains the first nanoparticles, at least a part of the first nanoparticles is agglomerated, and the viscosity of the adhesive measured at 25 ° C. with a leometer is 6.0 Pa at a shear rate of 1s ^-1 . -S or more and 30.0 Pa · s or less, and 2.5 Pa · s or more and 7.0 Pa · s or less when the shear rate is 100 s ^-1 , and the viscosity and shear rate 100 ^s- when the shear rate is 1 s ^-1 . The difference in viscosity when ¹ is 2.0 Pa · s or more.

According to the method for manufacturing a light emitting device according to an embodiment of the present disclosure, it is possible to manufacture a light emitting device which is excellent in workability of adhesive application and is less likely to cause displacement of the insulating member arranged in the adhesive.

It is a top view which shows typically the structure of the light emitting device manufactured by the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing of the light emitting device of FIG. 1 in the longitudinal direction in line IIA-IIA. It is a side view of the light emitting device of FIG. 1 in the lateral direction seen from the IIB direction. It is a flowchart which shows the flow of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing in the short side of the semiconductor light emitting device which schematically shows the prepared base and the adhesive in the preparation process of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing in the short side of the semiconductor light emitting device which schematically shows the semiconductor light emitting element which the adhesive was applied to the 1st surface of the base in the coating process of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing in the short side of the semiconductor light emitting element which shows typically the state which the insulating member is arranged in the adhesive in the arrangement process of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing in the short side of the semiconductor light emitting element which schematically shows the base which was covered with an adhesive and adhered with an insulating member in the bonding process of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is a top view which shows the state which the base is seen from the side of an insulating member schematically. It is sectional drawing in the short side of the light emitting device which schematically shows the individualized light emitting device in the individualization step of the manufacturing method of the light emitting device which concerns on 1st Embodiment. It is sectional drawing in the longitudinal direction which shows typically the structure of the light emitting device manufactured by the manufacturing method of the light emitting device which concerns on 2nd Embodiment. It is explanatory drawing which shows the procedure of measuring the viscosity of an adhesive. It is explanatory drawing which shows the index which shows the deviation of the insulating member in the evaluation of a light emitting device.

A light emitting device and a method for manufacturing the light emitting device according to the embodiment will be described below with reference to the drawings. However, the embodiments shown below exemplify a light emitting device for embodying the technical idea of the present embodiment, and are not limited to the following. Further, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of the present invention to the specific description, and are merely explanatory examples. It's just that. The size, positional relationship, etc. of the members shown in each drawing may be exaggerated for the sake of clarity. Further, in the following description, members having the same name and reference numerals are shown to have the same or the same quality, and detailed description thereof will be omitted as appropriate.

[First Embodiment]
<Light emitting device>
A light emitting device manufactured by the method for manufacturing a light emitting device according to the first embodiment will be described.
FIG. 1 is a plan view schematically showing the configuration of a light emitting device manufactured by the method for manufacturing a light emitting device according to the first embodiment. FIG. 2A is a sectional view taken along the line IIA-IIA of the light emitting device of FIG. 1 in the longitudinal direction. FIG. 2B is a side view of the light emitting device of FIG. 1 in the lateral direction as seen from the IIB direction.

As shown in FIGS. 1, 2A and 2B, the light emitting device 1 has an insulating base 11 having a first surface 13 and an adhesive 40 containing first nanoparticles coated on the first surface 13. And an insulating member 30 bonded to the base 11 via an adhesive 40. The base 11 is an insulating substrate for the semiconductor light emitting device 10. Further, in the semiconductor light emitting device, the semiconductor 12 is laminated on an insulating substrate (base 11). Further, the first surface 13 is the surface of the insulating substrate (base 11). Further, in the light emitting device 1, it is preferable that the insulating member 30 is a translucent member. Further, the light emitting device 1 preferably includes a support member 20 for mounting the semiconductor light emitting element 10.

In the drawing, in the light emitting device 1, two insulating members 30 (translucent members) are bonded to two bases 11 (each insulating substrate of two semiconductor light emitting elements 10) via an adhesive 40. However, one base 11 (an insulating substrate of one semiconductor light emitting device 10) is bonded to one insulating member 30 (translucent member), and three or more bases are described. A configuration in which three or more insulating members 30 (translucent members) are bonded to each of 11 (insulating substrates of three or more semiconductor light emitting devices 10) may be used. Further, the light emitting device 1 is a top surface emitting light emitting device in which the first surface 13 which is the light extraction surface of the base 11 (insulating substrate of the semiconductor light emitting element) is arranged on the upper surface side, or the first surface 13 is a side surface. It may be any of the side light emitting type light emitting devices arranged on the side. In the following, each configuration will be described by taking a top light emitting device as an example.

(Base)
The base 11 is an insulating substrate of the semiconductor light emitting device 10, and its plan view shape is not particularly limited, but it is preferably rectangular. The semiconductor light emitting device 10 is an element that emits light by itself when a voltage is applied, and is composed of a semiconductor 12 laminated on a base 11. The semiconductor 12 has a pair of electrodes 16 and 16 having different polarities on the surface of the base 11 opposite to the light extraction surface.

As the semiconductor 12, known semiconductors can be used, and for example, a light emitting diode or a laser diode is preferably used. Further, the semiconductor 12 can be selected of any wavelength. For example, as the blue and green semiconductor 12, a nitride-based semiconductor (In _X Al _Y Ga _1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) and GaP can be used. can. Further, as the red semiconductor 12, GaAlAs, AlInGaP and the like can be used in addition to the nitride semiconductor.

The pair of electrodes 16 and 16 having different polarities can be a p-side electrode and an n-side electrode, and the number of these electrodes is not particularly limited. That is, at least one p-side electrode and one n-side electrode may be used, and the number of p-side electrodes and n-side electrodes does not have to be the same. The pair of electrodes 16 and 16 can be made of gold, silver, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, alloys thereof, or the like. The base 11 can be made of sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenic, gallium phosphorus, indium phosphorus, zinc sulfide, zinc oxide, zinc selenium, diamond and the like.

(Support member)
At least one or more semiconductor light emitting elements 10 are mounted on the support member 20, and the semiconductor light emitting element 10 and the outside are electrically connected to each other. The support member 20 includes a flat plate-shaped base material 21 and wiring 22 arranged on the surface and / or inside (through hole) of the base material 21. Further, the inside (through hole) of the base material 21 may include a filling member 23 filled with a conductive or insulating member in addition to the wiring 22. The support member 20 is electrically connected to the semiconductor 12 by connecting the wiring 22 and the electrodes 16 and 16 of the semiconductor light emitting element 10 via the conductive adhesive member 50. The wiring 22 of the support member 20 is set with a structure such as a shape and a size according to the configuration and size of the electrodes 16 and 16 of the semiconductor light emitting element 10.
As shown in FIGS. 1, 2A and 2B, the wiring 22 is formed linearly along the lateral direction of the semiconductor light emitting element 10 which is rectangular in a plan view, and is connected to the electrodes 16 and 16. The electrode connection portion, two frame-shaped portions formed in a frame shape along the peripheral edge of the insulating member 30 in a plan view and connected to the electrode connection portion, and a straight line along the long side of the support member 20 in a plan view. It is preferably formed in a shape and is preferably composed of a connecting portion for connecting two electrode connecting portions and a frame-shaped portion. Further, in the wiring 22, it is preferable that the two electrode connecting portions and the frame portion are formed symmetrically.

For the base material 21 of the support member 20, it is preferable to use an insulating material, and it is preferable to use a material that does not easily transmit light emitted from the semiconductor light emitting device 10 or external light, and the material has a certain degree of strength. It is preferable to use. Specifically, the base material 21 can be composed of ceramics such as alumina, aluminum nitride and mullite, phenol resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and resin such as polyphthalamide. ..

The wiring 22 can be made of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, alloys thereof and the like. Further, even if the surface layer of the wiring 22 is provided with a layer of silver, platinum, aluminum, rhodium, gold, or an alloy thereof, from the viewpoint of wettability and / or light reflectivity of the conductive adhesive member 50. good.

The conductive adhesive member 50 is a bump of gold, silver, copper or the like, a metal paste containing metal powder such as silver, gold, copper, platinum, aluminum or palladium and a resin binder, tin-bismuth-based, tin-copper-based, tin. -Any one of silver-based, gold-tin-based solder, and low melting point metal and other brazing materials can be used.

(Insulating member)
The insulating member 30 is provided on the first surface 13 of the base 11 of the semiconductor light emitting element 10 via an adhesive 40. The insulating member 30 may be adhered to the base 11, but it may be formed larger than the first surface 13 of the base 11 so as to include all the first surface 13 of the base 11. preferable. That is, it is preferable that the lower peripheral edge of the insulating member 30 is located outside the peripheral edge of the first surface 13 of the base 11 in a plan view. Since the lower surface of the insulating member 30 is formed in an area larger than that of the first surface 13 of the base 11, the light emitted from the semiconductor light emitting device 10 can be incident on the insulating member 30 without loss.

The insulating member 30 is a first translucent member in which fluorescent particles are attached to an inorganic substance, a second translucent member in which fluorescent particles are solidified, or a third translucent member in which fluorescent particles are contained in a resin. It is preferably a sex member.
Examples of the inorganic substance to which the phosphor particles adhere in the first translucent member include glass and sapphire. The resin containing the phosphor particles in the third translucent member includes a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, a TPX (polymethylpentene) resin, a polynorbornene resin, or a resin thereof. Examples thereof include modified resins and hybrid resins. Above all, it is preferable to contain a flexible silicone resin having excellent heat resistance and electrical insulation. The concentration of the phosphor particles contained in the resin is, for example, about 50% by mass or more and 200% by mass or less.

The fluorophore particles include yttrium-aluminum-garnet-based phosphor (YAG: Ce) activated with cerium, lutetium-aluminum-garnet-based phosphor (LAG: Ce) activated with cerium, europium and / or chromium. Activated nitrogen-containing calcium aluminosilicate-based fluorescent material (CaO-Al ₂ O ₃ -SiO ₂ : Eu), europium-activated silicate-based fluorescent material ((Sr, Ba) ₂ SiO ₄ : Eu), β-sialon fluorescence Body, nitride-based fluorophore such as CASN-based phosphor (CaAlSiN ₃ : Eu), SCASN _- based phosphor ((Sr, Ca) AlSiN ₃ : Eu), KSF-based phosphor (K2 SiF ₆ : Mn), sulfurization Examples include physical phosphors and quantum dot phosphors.

The insulating member 30 is a single layer of one of the first translucent member, the second translucent member and the third translucent member, or the first translucent member, the second translucent member and the first. Two or more of the three translucent members may be laminated and configured. Further, in order to suppress deterioration of the phosphor particles contained in the first translucent member, the second translucent member and the third translucent member, an inorganic substance such as glass or sapphire or an inorganic substance such as glass or sapphire is placed on the upper surface thereof. A protective layer made of resin can also be provided.

(glue)
The adhesive 40 is between the base 11 and the insulating member 30 and covers from the first surface 13 to the side surface of the base 11, and adheres the base 11 and the insulating member 30. The adhesive 40 contains the first nanoparticles and is preferably made of a resin containing the first nanoparticles.
As shown in FIG. 2B, in the adhesive 40 containing the first nanoparticles, the lower side 41 of the adhesive 40 covering the side surface of the base 11 is viewed from the corners of the adjacent side surfaces of the base 11. , It is preferable that the surface is convexly curved toward the center of the side surface. Further, as shown in FIG. 2A, in the adhesive 40 containing the first nanoparticles, in a cross-sectional view, the outer surface 42 of the adhesive 40 covering the side surface of the base 11 is from the insulating member 30 to the side surface of the base 11. It is preferable that it is curved in a concave shape on the side.

In the adhesive 40 of the light emitting device 1, the content of the first nanoparticles is preferably 0.1% by mass or more and 20% by mass or less. When the content of the first nanoparticles is 0.1% by mass or more and 20% by mass or less, the light scattering action of the first nanoparticles improves the luminous flux in the light emitting device 1. In addition, the white turbidity of the adhesive 40 caused by the large amount of the first nanoparticles is suppressed. The concentration of the first nanoparticles of the adhesive 40 of the light emitting device 1 is higher than the concentration of the first nanoparticles of the adhesive 40 before curing in the preparation step described later. This is because the components contained in the adhesive 40 before curing volatilize in the process of curing the adhesive 40.

As the resin containing the first nanoparticles, a silicone resin, an epoxy resin, a phenol resin, a polycarbonate resin, an acrylic resin, a silicone-modified epoxy resin, or an organic silicone resin can be used. Here, specific examples of the organic silicone resin include dimethyl silicone resin and phenyl silicone resin.

(Refractive index of each member)
In the light emitting device 1, it is preferable that the first refractive index of the base 11, the second refractive index of the adhesive 40, and the third refractive index of the insulating member 30 have the following relationships.
(1st refractive index)> (2nd refractive index)> (3rd refractive index)
Further, the first refractive index is preferably larger than 1.65 and smaller than 1.80, the second refractive index is preferably 1.52 or more and 1.65 or less, and the third refractive index is larger than 1.40 and 1.52. It is preferably smaller. Here, the first refractive index, the second refractive index, and the third refractive index mean the refractive index with respect to the light having the wavelength (589 nm) from the Na lamp D line. When the light emitting device 1 has such a refractive index, total reflection at the interface between the base 11 and the adhesive 40 and the interface between the adhesive 40 and the insulating member 30 is reduced, so that light is emitted. The luminous flux in the device 1 is increased, and the light extraction property can be improved.

<Manufacturing method of light emitting device>
A method of manufacturing the light emitting device according to the first embodiment will be described.
FIG. 3 is a flowchart showing the flow of the manufacturing method of the light emitting device according to the first embodiment. FIG. 4A is a cross-sectional view of a semiconductor light emitting device schematically showing a prepared base and an adhesive in the preparation step of the method for manufacturing a light emitting device according to the first embodiment in the short direction. FIG. 4B is a cross section in the lateral direction of the semiconductor light emitting device schematically showing the semiconductor light emitting device to which the adhesive is coated on the first surface of the base in the coating step of the method for manufacturing the light emitting device according to the first embodiment. It is a figure. FIG. 4C is a sectional view in the lateral direction of the semiconductor light emitting device schematically showing a state in which the insulating member is arranged in the adhesive in the arrangement step of the method for manufacturing the light emitting device according to the first embodiment. FIG. 4D is a cross-sectional view of a semiconductor light emitting device schematically showing a base covered with an adhesive and bonded to an insulating member in the bonding step of the method for manufacturing a light emitting device according to the first embodiment. be. FIG. 4E is a plan view schematically showing a state in which the base is viewed from the insulating member side. FIG. 4F is a sectional view in the short direction of the light emitting device schematically showing the individualized light emitting device in the individualization step of the method for manufacturing the light emitting device according to the first embodiment.

As shown in FIG. 3, the method for manufacturing a light emitting device according to the first embodiment is a preparation step S1 for preparing an insulating base 11 having a first surface 13 and an adhesive 40, and adhering to the first surface 13. A coating step S2 for applying the agent 40, an arrangement step S3 for arranging the insulating member 30 on the applied adhesive 40, and an adhesive step S4 for curing the adhesive to bond the base and the insulating member. include. Further, the method for manufacturing the light emitting device may include a coating step S5 and an individualization step S6 after the completion of the bonding step S4. For the configuration of the light emitting device, refer to FIGS. 1, 2A and 2B. Hereinafter, each step will be described.

(Preparation process)
As shown in FIG. 4A, the preparation step S1 is a step of preparing an insulating base 11 having a first surface 13 as a light extraction surface and an adhesive 40. Here, the base 11 is an insulating substrate having a first surface 13, and the semiconductor 12 is laminated on the base 11.

In the preparation step S1, a plurality of semiconductors 12 having a pair of electrodes 16 and 16 on the surface side facing the first surface 13 of the base 11 are attached to a support member 20 having wirings 22 on the surface and inside of the base material 21. This is the process of electrically connecting. The semiconductor 12 and the support member 20 are connected by a known method, and the electrodes 16 and 16 and the wiring 22 are electrically connected via, for example, a conductive adhesive member 50 such as solder.

In the step of preparing the adhesive 40, the adhesive 40 is prepared in the resin dish 101. The adhesive 40 contains the first nanoparticles, at least a part of the first nanoparticles is aggregated, and has the following viscosity characteristics. The viscosity characteristics are such that the viscosity of the adhesive 40 measured at 25 ° C. with a leometer (see FIG. 6) is 6.0 Pa · s or more and 30.0 Pa · s or less at a shear rate of 1s ^-1 , and shearing. When the speed is 100s ^-1 , it is 2.5 Pa · s or more and 7.0 Pa · s or less, and the difference between the viscosity when the shear rate is 1s ^-1 and the viscosity when the shear rate is 100s ^-1 is 2.0 Pa · s or more. be. In the present specification, the shear rate 1s ^-1 may be referred to as a low shear rate, and the shear rate 100s ^-1 may be referred to as a high shear rate. Further, the difference between the viscosity when the shear rate is 1s ^-1 and the viscosity when the shear rate is 100s ^-1 is preferably 2.0 Pa · s or more and 27.5 Pa · s or less.

By specifying the viscosity of the adhesive 40 at a low shear rate, the insulating member 30 arranged on the adhesive 40 does not shift in the step where the stress applied to the adhesive 40 is small as in the arrangement step S3. Further, by specifying the viscosity of the adhesive 40 at a high shear rate, the coating workability of the adhesive 40, that is, the so-called stamping property, is obtained in a step such as the coating step S2 and the bonding step S4 in which the stress applied to the adhesive 40 is large. Is excellent. Further, when the viscosity at the low shear rate and the high shear rate are within the above ranges, the fillet formed by the adhesive 40 becomes normal. Further, by adjusting the ticking property of the adhesive 40, the deviation of the insulating member 30, the stamping property of the adhesive 40, and the fillet forming property of the adhesive 40 are further improved. The chicosis in the present specification is the ratio of the viscosity at a low shear rate to the viscosity at a high shear rate.

The adhesive 40 contains the first nanoparticles. The first nanoparticles are preferably dispersed in the adhesive 40 in order to make the viscosity characteristics of the adhesive 40 uniform. The particle size of the first nanoparticles is preferably 3 nm or more and 200 nm or less as the primary particle size. At least a part of the dispersed first nanoparticles is aggregated. At that time, the secondary particle size of the first nanoparticles after aggregation is several tens of nm or more and several 500 nm or less. Further, the particle size of the first and second nanoparticles can be defined by the average particle size (for example, D50). The particle size can be measured by a laser diffraction / scattering method, an image analysis method (scanning electron microscope (SEM), transmission electron microscope (TEM)), dynamic light scattering method, X-ray small angle scattering method, or the like.

The amount of the first nanoparticles added is 0.1 phr (adds 0.1 g to 100 g of the resin) or more and 5 phr or less with respect to the adhesive 40 in order to keep the viscosity characteristics of the adhesive 40 within a predetermined range. Is preferable. In the adhesive 40, silica is preferable as the first nanoparticles because the viscosity characteristics can be easily adjusted.
Further, the adhesive 40 may contain at least one kind of second nanoparticles made of zirconium oxide, titanium oxide, zinc oxide, aluminum oxide or cellulose in addition to the first nanoparticles. The adhesive 40 contains the first nanoparticles, or by containing the first nanoparticles and the second nanoparticles, the resin dripping of the adhesive 40 in the bonding step S4 is suppressed, and the base 11 and the insulating member are contained. It is possible to obtain the effect that the adhesive strength with 30 is improved, unnecessary light scattering is suppressed, and the light extraction property is improved.

The adhesive 40 preferably contains a solvent. The viscosity of the adhesive 40 increases by adding the first nanoparticles, and the viscosity mainly at a low shear rate increases. Therefore, in the arrangement step S3, the displacement of the insulating member 30 arranged in the adhesive 40 is suppressed. Can be done. On the other hand, the addition of the first nanoparticles to the adhesive 40 increases the viscosity at high shear rate at the same time as the viscosity at low shear rate, which affects the coating workability (stamping property) of the adhesive 40. However, by containing a solvent, it is possible to suppress an increase in viscosity at a high shear rate.

The solvent preferably has a boiling point of 200 ° C. or higher and 300 ° C. or lower. The solvent may be either an inorganic solvent or an organic solvent, but an organic solvent is preferable in consideration of workability. Further, the organic solvent is preferably a high boiling point organic solvent in consideration of workability. The solvent is not particularly limited as long as it can be dissolved in a resin, and specific examples thereof include at least one of butyl carbitol acetate, tripropylene glycol monobutyl ether and a hydrocarbon solvent. The amount of the solvent added is preferably 0 phr or more and 5.0 phr or less, and more preferably 0.1 phr or more and 4.0 phr or less with respect to the adhesive 40 in order to keep the viscosity characteristics of the adhesive 40 within a predetermined range. .. Further, the adhesive 40 preferably further contains a resin. As the resin, the above-mentioned organic silicone resin or the like is used.

To adjust the viscosity of the adhesive 40 in the preparation step S1, calculate the required amount of resin, the amount of first nanoparticles and the amount of solvent added to the required viscosity characteristics from the profile calculated in advance using the design of experiments. conduct.

(Applying process)
As shown in FIG. 4B, the coating step S2 is a step of applying the adhesive 40 to the first surface 13 of the base 11. The method of applying the adhesive 40 to the first surface 13 is a known method, for example, using a stamp pin 102 of a die bonder.

(Placement process)
As shown in FIG. 4C, in the arrangement step S3, the insulating member 30 is arranged on the applied adhesive 40. The method of arranging the insulating member 30 is a known method. For example, the insulating member 30 is lowered to the adhesive 40 side by a collet 103 of a die bonder, and the adhesive 40 is pressed. In addition, each of the plurality of insulating members 30 may be lowered to the adhesive 40 side to press each of the plurality of adhesives 40, or one insulating member 30 may be lowered to the adhesive 40 side. , Each of the plurality of adhesives 40 may be pressed.

(Adhesion process)
As shown in FIGS. 4D and 4E, the bonding step S4 is a step of curing the adhesive 40 to bond the base 11 and the insulating member 30.
In the bonding step S4, a fillet is formed on the side surface of the semiconductor light emitting device 10 (base 11) by curing the adhesive 40. Further, the shape of the fillet is formed by controlling the viscosity characteristic of the adhesive 40 within a predetermined range. Further, in order to control the shape of the fillet formed by the adhesive 40, for example, in the case of application with the stamp pin 102, it is necessary to adjust the opening degree of the squeegee to adjust the amount of the adhesive to be applied. The adhesive 40 is cured by a conventionally known method such as heat drying and natural drying.

As shown in FIG. 2B, the fillet shape is such that the lower side 41 of the adhesive 40 covering the side surface of the semiconductor light emitting device 10 (base 11) does not reach the lower side of the semiconductor light emitting device 10 in the side view. In addition, it is preferable that the semiconductor light emitting device 10 has a shape that is convexly curved from the corners of the side surfaces toward the center of the side surfaces. Further, the fillet shape is preferably a shape in which the outer surface 42 of the adhesive 40 covering the side surface is concavely curved from the insulating member 30 to the side surface side of the semiconductor light emitting element 10. Due to such a fillet shape, the adhesive strength between the semiconductor light emitting device 10 (base 11) and the insulating member 30 is improved.

(Coating process)
The coating step S5 is a step of forming the coating member 60 that covers the semiconductor light emitting element 10, the adhesive 40, and the insulating member 30 after the bonding step S4. In the coating step S6, the coating member 60 in a liquid state is filled by transfer molding, injection molding, compression molding, potting or the like so as to cover the semiconductor light emitting element 10, the adhesive 40, and the insulating member 30. When the upper surface of the insulating member 30 is covered with the covering member 60, the covering member 60 is removed. This exposes the insulating member 30 from the covering member 60. As a method for removing the covering member 60, a known method can be used. For example, grinding and blasting can be mentioned. After that, the covering member 60 is cured by heat drying, natural drying, or the like.

The covering member 60 is preferably a light-reflecting member containing a reflective substance. From the viewpoint of upward light extraction efficiency, the covering member 60 preferably has a light reflectance at the emission peak wavelength of the semiconductor light emitting device 10 of 70% or more, more preferably 80% or more, and more preferably 90%. The above is even more preferable. Further, the covering member 60 is preferably white. Therefore, it is preferable that the covering member 60 contains a white pigment as a reflective substance in the base resin. Examples of the base material resin of the covering member 60 include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and modified resins thereof. As the white pigment, titanium oxide, zinc oxide, magnesium oxide and the like can be used.

(Individualization process)
In the individualization step S6, the support member 20 and the covering member 60 are formed along the cutting line CL (see FIGS. 4E and 4F) between the semiconductor light emitting element 10 and the insulating member 30 by laser irradiation or a tool such as a blade. This is a step of cutting to produce a light emitting device 1. When one insulating member 30 is arranged for a plurality of semiconductor light emitting elements 10 in the arrangement step S3, the individualizing step S6 cuts the insulating member 30, the covering member 60, and the support member 20. This is a step of manufacturing the light emitting device 1.

[Second Embodiment]
The light emitting device manufactured by the method for manufacturing the light emitting device according to the second embodiment will be described.
FIG. 5 is a cross-sectional view showing a configuration of a light emitting device manufactured by the method for manufacturing a light emitting device according to a second embodiment.

<Light emitting device>
As shown in FIG. 5, the light emitting device 1B is the light emitting device according to the first embodiment, except that the base 11 is a ceramic substrate 71 and the insulating member 30 is an insulating substrate of a semiconductor light emitting device. It has the same configuration as the light emitting device 1 manufactured by the manufacturing method.
Further, the light emitting device 1B has a frame-shaped resin 73 arranged around the insulating member 30 bonded to the base 11 via the adhesive 40 and an insulating member arranged in the frame of the frame-shaped resin 73. It is preferable to include a sealing resin 74 that seals 30 in the frame.

The base 11 is composed of a ceramic substrate 71 and a resin substrate 72 made of a resin such as a glass epoxy resin fixed around the ceramic substrate 71. Further, in the base 11, the insulating member 30 (insulating substrate of the semiconductor light emitting element) is arranged on the upper surface of the ceramic substrate 71 via the adhesive 40, and the wiring 22 is arranged on the upper surface of the resin substrate 72. Will be done.

In the semiconductor light emitting device of the second embodiment, the semiconductor 12 is laminated on the insulating member 30 (insulating substrate) (see FIGS. 2A and 2B), and the insulating member 30 side is a base via the adhesive 40. It is adhered to 11. Further, the semiconductor light emitting device has electrodes 16 and 16 (see FIGS. 2A and 2B) on the surface of the semiconductor 12 opposite to the insulating member 30 (insulating substrate), and the electrodes 16 and 16 are silver. It is electrically connected to the wiring 22 by a wire 75 made of a wire or the like.

The frame-shaped resin 73 is made of an epoxy resin, a silicone resin, or the like, and is arranged so as to cover the wiring 22. Further, the sealing resin 74 is made of an epoxy resin, a silicone resin, or the like, and preferably contains phosphor particles.

<Manufacturing method of light emitting device>
The method for manufacturing the light emitting device according to the second embodiment is the same as the method for manufacturing the light emitting device according to the first embodiment, except that the coating step S5 is included and the individualization step S6 is not performed.
(Coating process)
In the coating step S5, the electrodes 16 and 16 of the semiconductor light emitting device and the wiring 22 provided on the base 11 (resin substrate 72) are electrically connected by the wire 75, and the frame-shaped resin 73 covers the wiring 22. Is formed, and the sealing resin 74 is formed so as to seal the semiconductor light emitting element arranged in the frame of the frame-shaped resin 73.

In Examples 1 to 5 and Comparative Examples 1 to 3 of the present disclosure, the effect was confirmed by performing the bonding step without performing the coating step and the individualizing step. In this example, for the sake of explanation, it may be referred to as a light emitting device in the manufacturing process according to Examples 1 to 5 and a light emitting device in the manufacturing process of Comparative Examples 1 to 3.
Further, in the present specification, the light emitting device in the manufacturing process indicates the following states. A plurality of semiconductor light emitting devices provided with a base (insulating substrate) were solder-bonded face-down to the wiring of the support member. An adhesive whose viscosity has been adjusted in advance is applied to the light extraction surface of the bases of multiple solder-bonded semiconductor light emitting elements, and a plurality of insulating members (translucent members) are placed on the applied adhesive. did. After pressing the insulating member toward the semiconductor light emitting device, the adhesive was cured by thermosetting to bond the semiconductor light emitting device and the insulating member.

The details of each component of the light emitting device in the manufacturing process according to Examples 1 to 5 and the light emitting device in the manufacturing process according to Comparative Examples 1 to 3 are as follows.
(Support member)
A support member having wiring on the surface and inside of the BT resin base material was used.
(Semiconductor light emitting device)
A rectangular blue LED in which a nitride semiconductor having an emission peak wavelength of 448 to 450 nm was laminated on a sapphire substrate was used.
(Insulating member)
A phenylsilicone resin containing a KSF-based phosphor and β-sialon was used.
(glue)
Nanosilica having a primary particle size of 12 nm and a phenylsilicone resin to which a high boiling hydrocarbon solvent was added were used. Table 1 shows the amount of nanosilica and solvent added and the viscosity of the adhesive. The cone plate 112 was a circle having a diameter of 40 mm in a plan view, and an inclination angle of 2 degrees from the center of the circle of the surface in contact with the adhesive 40 to the outer circumference was used.

(Adhesive viscosity measurement method)
As shown in FIG. 6, the viscosity of the adhesive 40 was measured by the following procedure using a reometer 110 (DHR-3 manufactured by TA Instruments). The results are shown in Table 1.
(1) The adhesive 40 is placed on the plate 111 whose temperature has been adjusted to 25 ° C.
(2) The cone plate 112 is lowered to a height of 102 μm from the upper surface of the temperature-controlled plate 111, and the adhesive 40 is sandwiched.
(3) Scrape off the excess adhesive 40 protruding from the cone plate 112.
(4) Lower the cone plate 112 to a gap of 52 μm for measuring viscosity.
(5) Obtain the viscosity value for a time when the torque (viscosity) is stable at a shear rate of 1s ^-1 . For torque stability, the measurement is repeated every 10s, and it is considered that the latest three torque value variations are stable within 5%. It measures up to 120 s, but if the torque stabilizes at 40 s, the viscosity value of 40 s is acquired.
(6) Obtain the viscosity value for a time when the torque (viscosity) is stable at a shear rate of 100s ^-1 . For torque stability, the measurement is repeated every 10s, and it is considered that the latest three torque value variations are stable within 5%. It measures up to 120 s, but if the torque stabilizes at 40 s, the viscosity value of 40 s is acquired.
(7) The difference between the acquired viscosity value of the shear rate 1s ^-1 and the viscosity value of the shear rate 100s ^-1 is calculated.

<Evaluation of characteristics>
For Examples 1 to 5 and Comparative Examples 1 to 3, the deviation of the 32 insulating members and the fillet performance were evaluated according to the following criteria, and the results are shown in Table 1. The workability (stamping property) when applying the adhesive was also evaluated according to the following criteria, and the results are shown in Table 1.

(Deviation of insulating member 30)
For Examples 1 to 5 and Comparative Examples 1 to 3, the appearance of each of the 32 insulating members and the deviation of the insulating members are visually checked and the CNC (Computer Natural Control) image measurement system NEXIV (model number VMZ-R6555) manufactured by Nicoon is used. It was measured and evaluated at.
As shown in FIG. 7, regarding the appearance, in a plan view, those in which the insulating member 30 is tilted and is in contact with or is likely to come into contact with the adjacent insulating member 30 are regarded as "x: defective", and those which are not are regarded as "x: defective". "○: Good".
For the measurement by NEXIV, a straight line connecting the centers of the light emitting devices in the manufacturing process located at both ends of the 32 light emitting devices in the manufacturing process in which the longitudinal side surfaces of the rectangular insulating member 30 are arranged adjacent to each other. Is the reference line L, and the angle (θ) formed by the reference line L and the side surfaces of the 32 insulating members 30 in the lateral direction is measured, and the standard deviation (σ) indicating the measurement variation is 0.5 or more. Was "x: defective", and within 0.4 was "○: good".

(Fillet workmanship)
For Examples 1 to 5 and Comparative Examples 1 to 3, the fillets of the adhesive after curing were observed and evaluated. Those in which no resin dripping is observed, those in which the fillet is formed by being concavely curved from the insulating member 30 to the side surface side of the semiconductor light emitting device are regarded as "○: good", and those in which resin dripping is observed, the fillet is a semiconductor. Those not formed on the side surface of the light emitting element were regarded as "x: defective".

(Stamping property)
In Examples 1 to 5 and Comparative Examples 1 to 3, the workability of applying the adhesive was evaluated. As shown in FIG. 4B, the one with poor workability when taking a certain amount of the adhesive 40 from the resin dish 101 (see FIG. 4A) with the stamp pin 102 is “×: defective”, and the one with good workability is “〇”. : Good ". Further, when a certain amount of the adhesive 40 was applied to the base 11 with the stamp pin 102, the one having poor workability was designated as "x: defective", and the one having good workability was designated as "◯: good".

As shown in Table 1, in Examples 1 to 5, since the viscosity characteristics of the adhesive were within a predetermined range, they were excellent in the displacement of the insulating member, the stamping property, and the fillet finish. On the other hand, Comparative Examples 1 and 2 were inferior in the deviation of the insulating member because the viscosity characteristic of 1S ^-1 was less than the lower limit. Comparative Example 3 was inferior in stamping property and fillet performance because the viscosity characteristics of 1S ^-1 and 100S ^-1 exceeded the upper limit.

1 Light emitting device 1B Light emitting device 10 Semiconductor light emitting element 11 Base 12 Semiconductor 13 First surface 16 Electrode 20 Support member 21 Base material 22 Wiring 23 Filling member 30 Insulating member 40 Adhesive 41 Lower side 42 Outer surface 50 Conductive adhesive member 60 Member 71 Ceramic substrate 72 Resin substrate 73 Frame-shaped resin 74 Encapsulating resin 75 Wire 101 Resin dish 102 Stamp pin 103 Golet 110 Leometer 111 Plate 112 Cone plate S1 Preparation process S2 Coating process S3 Arrangement process S4 Adhesive process S5 Coating process S6 Clearing process

Claims (9)

A preparatory step to prepare an insulating base with a first surface and an adhesive,
A coating step of applying the adhesive to the first surface and
An arrangement step of arranging an insulating member on the applied adhesive, and
It comprises a bonding step of curing the adhesive to bond the base and the insulating member.
In the preparation step, the adhesive contains the first nanoparticles, at least a part of the first nanoparticles is agglomerated, and the viscosity of the adhesive measured at 25 ° C. with a leometer is the shear rate. When 1s ^-1 , it is 6.0 Pa · s or more and 30.0 Pa · s or less, and when the shear rate is 100 s ^-1 , it is 2.5 Pa · s or more and 7.0 Pa · s or less, and the shear rate is 1s ^-1 . A method for manufacturing a light emitting device in which the difference between the viscosity at the time and the viscosity at a shear rate of 100 s ^-1 is 2.0 Pa · s or more. The method for manufacturing a light emitting device according to claim 1, wherein the adhesive in the preparation step contains a solvent. The method for manufacturing a light emitting device according to claim 2, wherein the solvent has a boiling point of 200 ° C. or higher and 300 ° C. or lower. The method for manufacturing a light emitting device according to claim 2 or 3, wherein the solvent is at least one of butyl carbitol acetate, tripropylene glycol monobutyl ether, and a hydrocarbon solvent. The method for manufacturing a light emitting device according to any one of claims 1 to 4, wherein the first nanoparticles are dispersed in the adhesive. The method for manufacturing a light emitting device according to any one of claims 1 to 5, wherein the first nanoparticles have a primary particle size of 3 nm or more and 200 nm or less. The method for manufacturing a light emitting device according to any one of claims 1 to 6, wherein the first nanoparticles are silica. The manufacture of the light emitting device according to any one of claims 1 to 7, wherein in the preparation step, the amount of the first nanoparticles added is 0.1 phr or more and 5.0 phr or less with respect to the adhesive. Method. In the preparation step, the adhesive contains at least one kind of second nanoparticles composed of zirconium oxide, titanium oxide, zinc oxide, aluminum oxide or cellulose in addition to the first nanoparticles. The method for manufacturing a light emitting device according to any one of claims 8.

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