JP2021532211A - 変換素子の製造方法、変換素子、および当該変換素子を有する発光装置 - Google Patents
変換素子の製造方法、変換素子、および当該変換素子を有する発光装置 Download PDFInfo
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- JP2021532211A JP2021532211A JP2021500672A JP2021500672A JP2021532211A JP 2021532211 A JP2021532211 A JP 2021532211A JP 2021500672 A JP2021500672 A JP 2021500672A JP 2021500672 A JP2021500672 A JP 2021500672A JP 2021532211 A JP2021532211 A JP 2021532211A
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Abstract
Description
A)ルテチウム、アルミニウムおよび希土類元素を含む1または複数の前駆体物質を用意する工程、
B)前記前駆体物質を、バインダーおよび溶媒と混合して、スラリーを得る工程、
C)工程B)のスラリーからグリーン体を形成する工程、
F)前記グリーン体を、1720℃を超える温度で焼結して、変換素子を得る工程、
を有する、変換素子の製造方法に関する。
2 半導体チップ
3 変換素子
4、6 電気接続部
5 基板
7 ボンディングワイヤ
Claims (18)
- A)ルテチウム、アルミニウムおよび希土類元素を含む1または複数の前駆体物質を用意する工程、
B)前記前駆体物質を、バインダーおよび溶媒と混合して、スラリーを得る工程、
C)工程B)のスラリーからグリーン体を形成する工程、
F)前記グリーン体を、1720℃を超える温度で焼結して、変換素子(3)を得る工程、
を有する、
変換素子(3)の製造方法。 - 前記焼結は、1720℃以上1780℃以下の温度で行う、請求項1に記載の方法。
- 工程A)は、ルテチウムを含む第1の前駆体物質、アルミニウムを含む第2の前駆体物質、および希土類元素を含む第3の前駆体物質を用意する工程である、請求項1または2に記載の方法。
- 前記第1の前駆体物質はLu2O3であり、前記第2の前駆体物質はAl2O3であり、前記第3の前駆体物質はCeO2である、請求項3に記載の方法。
- 工程B)の混合は、ボールミルにより行われる、請求項1〜4のいずれか1項に記載の方法。
- 工程C)の前記グリーン体はグリーンテープを含み、前記グリーンテープは、工程C)において工程B)のスラリーからテープキャスティング法により形成される、請求項1〜5のいずれか1項に記載の方法。
- 工程F)の前に、前記グリーン体の表面の構造化処理を含む、請求項1〜6のいずれか1項に記載の方法。
- 前記構造化処理は、所定の深さを有する複数の溝の形成を含み、前記深さは10μm以上40μm以下である、請求項7に記載の方法。
- 工程A)の後、アルミニウムを含む物質は添加されない、請求項1〜8のいずれか1項に記載の方法。
- 第1の相および第2の相を含み、
前記第1の相はルテチウム、アルミニウム、酸素および希土類元素を含み、前記第2の相はAl2O3単結晶を含む、
変換素子(3)。 - 前記第1の相は、Lu3Al5O12:Ceを含む、請求項10に記載の変換素子(3)。
- 前記Al2O3単結晶は、六方晶系の単結晶である、請求項10または11に記載の変換素子(3)。
- 前記Al2O3単結晶の平均結晶サイズは、1μm以上10μm以下である、請求項10〜12のいずれか1項に記載の変換素子(3)。
- 前記変換素子(3)は、表面構造と、前記表面構造から少なくとも部分的に突出した前記Al2O3単結晶と、を有する、請求項10〜13のいずれか1項に記載の変換素子(3)。
- 前記表面構造の深さは10μm以上40μm以下である、請求項14に記載の変換素子(3)。
- 請求項1〜9のいずれか1項に記載の方法で製造された、請求項10〜15のいずれか1項に記載の変換素子(3)。
- 請求項10〜15のいずれか1項に記載の変換素子(3)を有する発光装置(1)であって、前記発光装置(1)は前記発光装置の動作中に第1の光を放射する第1光源をさらに有し、
前記変換素子(3)は、前記第1光源のビーム路に配置され、前記変換素子(3)は、第1の放射の少なくとも一部分を第2の放射に変換する、
発光装置(1)。 - 前記装置は、発光ダイオード(LED)および誘導放出による光増幅放射(LASERs)装置からなる群から選択される、請求項17に記載の発光装置(1)。
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