JP2021507054A - 発光デバイス用の波長変換材料 - Google Patents
発光デバイス用の波長変換材料 Download PDFInfo
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- JP2021507054A JP2021507054A JP2020533803A JP2020533803A JP2021507054A JP 2021507054 A JP2021507054 A JP 2021507054A JP 2020533803 A JP2020533803 A JP 2020533803A JP 2020533803 A JP2020533803 A JP 2020533803A JP 2021507054 A JP2021507054 A JP 2021507054A
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- 239000000463 material Substances 0.000 title claims description 52
- 238000006243 chemical reaction Methods 0.000 title description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims description 12
- 229910052712 strontium Inorganic materials 0.000 claims description 12
- 229910052788 barium Inorganic materials 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 28
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 229910052790 beryllium Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- -1 Beryllium nitride Chemical class 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910016655 EuF 3 Inorganic materials 0.000 description 3
- 238000003991 Rietveld refinement Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910010100 LiAlSi Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- PWOSZCQLSAMRQW-UHFFFAOYSA-N beryllium(2+) Chemical compound [Be+2] PWOSZCQLSAMRQW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KAMGYJQEWVDJBD-UHFFFAOYSA-N bismuth zinc borate Chemical compound B([O-])([O-])[O-].[Zn+2].[Bi+3] KAMGYJQEWVDJBD-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000002284 excitation--emission spectrum Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/55—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing beryllium, magnesium, alkali metals or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Luminescent Compositions (AREA)
- Optical Filters (AREA)
- Led Device Packages (AREA)
Abstract
Description
一部の実施形態において、蛍光体は、AE=Ca,Sr,Ba;RE=Eu,Ce;0<x<0.1;0≦y<1であるAE1−xRExBe1−yAl0.5ySi2+0.5yN4+0.5yとし得る。
SrBeSi2N4:Euは、Sr(NH2)2、Be3N2、Si(NH)2、及びドーパントとしてのEuF3から、1500℃で窒素雰囲気及び大気圧の下で調合され得る。一例において、35.9g(0.3モル)のSr(NH2)2、3.6g(0.07モル)のBe3N2、17.4g(0.3モル)の“Si(NH)2”、及び0.6mg(0.01モル)のEuF3を混合し、1500℃で6時間、窒素雰囲気下で焼結させる。この材料は、板状粒子を示し、例えばボールミリングによって、粉末形態へと脱凝集及び粉砕され得る。
(外1)
で結晶化し、セルパラメータはa=4.86082(2)及びc=9.42263(4)Åである。図6は、SrBeSi2N4:Euの結晶構造を示している。図7は、SrBeSi2N4:Eu材料におけるSrの配位圏を示している。SrBeSi2N4:Euの結晶構造は、2つの構築ユニットから構築されており、平面三角形[BeN3]7−ユニット42が、角を共有する2つのSiN4四面体から構築された[Si2N7]6−ユニット44によって、共通の角で接続されて、3Dネットワーク構造を構築している。SiN4四面体の底面、BeN3三角形、及び3つのN1原子のエンプティリングは、(001)面内の正三角形の層を形成する。SiN4四面体の底面、BeN3三角形、及び3つのN1原子のエンプティリングは、(001)面内の正三角形の層を形成する。Si−N2−Si角は180°である。従って、N2は、ワイコフ位置2cによって特徴付けられる格子サイトを占有する。Sr(図6の46、図7の54)はN(図7の52)によって9配位される。上下に位置するSiN4四面体からの6個のN原子は、規則的な三方晶系プリズムを形成する。赤道面に3個のN原子が位置し、60°のN2−Sr−N2角を持つ。
2. SrBe6ON4:Eu
SrBe6ON4:Euは、1500℃で大気圧の下で合成される。一例において、23.9mg(0.2ミリモル)のSr(NH2)2、3.6mg(0.07ミリモル)のBe3N2、23.3mg(0.4ミリモル)の“Si(NH)2”、及び0.4mg(0.01ミリモル)のEuF3を混合し、1500℃で6時間、H2/N2(5/95)雰囲気下で焼結させる。この蛍光体原料は、大きい結晶凝集体(>100μm)を示し、例えばボールミリング又は他の好適技術によって、粉末形態へと脱凝集及び粉砕され得る。
Claims (9)
- 平面三角形BeN3構造及び四面体Be(N,O)4構造のうちの一方を有するホスト格子と、
ドーパント種と、
を有するルミネセント材料。 - 前記ドーパント種は、Eu及びCeのうちの一方である、請求項1に記載のルミネセント材料。
- 前記ホスト格子はSrBe6ON4である、請求項1に記載のルミネセント材料。
- 前記ホスト格子はSrBeSi2N4である、請求項1に記載のルミネセント材料。
- 前記ホスト格子はM1−xBeSi2N4(M=Ca,Sr,Ba)であり、前記ドーパント種はEuxである、請求項1に記載のルミネセント材料。
- 前記ホスト格子はM1−xSrBe6ON4(M=Ca,Sr,Ba)であり、前記ドーパント種はEuxである、請求項1に記載のルミネセント材料。
- 光源と、
前記光源によって放たれる光の経路内に配置されたニトリドベリレート蛍光体であり、平面三角形BeN3構造及び四面体Be(N,O)4構造のうちの一方を有するニトリドベリレート蛍光体と、
を有するデバイス。 - 前記ニトリドベリレート蛍光体は透明マトリックス内に配置されている、請求項7に記載のデバイス。
- 前記ニトリドベリレート蛍光体は、SrBe6ON4:Eu、SrBeSi2N4:Eu、M1−xBeSi2N4:Eux(M=Ca,Sr,Ba)、及びM1−xSrBe6ON4:Eux(M=Ca,Sr,Ba)からなる群から選択されている、請求項7に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18152482.8 | 2018-01-19 | ||
EP18152482 | 2018-01-19 | ||
PCT/EP2019/050559 WO2019141582A1 (en) | 2018-01-19 | 2019-01-10 | Wavelength converting material for a light emitting device |
Publications (2)
Publication Number | Publication Date |
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JP2021507054A true JP2021507054A (ja) | 2021-02-22 |
JP6898528B2 JP6898528B2 (ja) | 2021-07-07 |
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Family Applications (1)
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Country Status (6)
Country | Link |
---|---|
US (1) | US10982143B2 (ja) |
EP (1) | EP3704746B1 (ja) |
JP (1) | JP6898528B2 (ja) |
KR (1) | KR102228927B1 (ja) |
CN (1) | CN111712934B (ja) |
WO (1) | WO2019141582A1 (ja) |
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CN115093851B (zh) * | 2022-07-04 | 2024-03-08 | 兰州大学 | 一种小粒径氮化物窄带绿色荧光粉及其制备方法 |
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MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
JP4524468B2 (ja) * | 2004-05-14 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled |
JP4988180B2 (ja) * | 2004-09-29 | 2012-08-01 | 昭和電工株式会社 | 酸窒化物系蛍光体及びその製造法 |
JP4911578B2 (ja) | 2006-06-06 | 2012-04-04 | シャープ株式会社 | 酸窒化物蛍光体および発光装置 |
DE102008058621A1 (de) * | 2008-11-22 | 2010-05-27 | Merck Patent Gmbh | Co-dotierte 1-1-2-Nitride |
-
2019
- 2019-01-10 CN CN201980007040.XA patent/CN111712934B/zh active Active
- 2019-01-10 EP EP19700190.2A patent/EP3704746B1/en active Active
- 2019-01-10 JP JP2020533803A patent/JP6898528B2/ja active Active
- 2019-01-10 KR KR1020207017759A patent/KR102228927B1/ko active IP Right Grant
- 2019-01-10 WO PCT/EP2019/050559 patent/WO2019141582A1/en unknown
- 2019-01-18 US US16/252,001 patent/US10982143B2/en active Active
Also Published As
Publication number | Publication date |
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CN111712934B (zh) | 2022-05-03 |
WO2019141582A1 (en) | 2019-07-25 |
EP3704746B1 (en) | 2021-03-10 |
JP6898528B2 (ja) | 2021-07-07 |
KR20200079341A (ko) | 2020-07-02 |
EP3704746A1 (en) | 2020-09-09 |
CN111712934A (zh) | 2020-09-25 |
US10982143B2 (en) | 2021-04-20 |
KR102228927B1 (ko) | 2021-03-17 |
US20190225881A1 (en) | 2019-07-25 |
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